JP5674669B2 - ルテニウム金属キャップ層を形成する方法 - Google Patents
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- H01L21/76864—Thermal treatment
Description
SRu=(RuCu-Rulow-k)/RuCu (1)
ここで、RuCuはCu金属膜上に堆積されたRu金属の量を表し、かつRulow-kはlow-k材料上に堆積されたRu金属の量を表す。(1)式によると、選択性が1であるとは、low-k材料上に対するCu金属膜上でのRu金属堆積が理想の選択性を示すことを意味し、かつ、選択性が0であるとは、low-k材料上に対するCu金属膜上でのRu金属堆積が選択性を示さないことを意味する。RuCu及びRulow-kはその場X線蛍光(XRF)分光法によって測定された。Ru3(CO)12及びCOキャリアガスを用いたRu金属堆積の例は特許文献1、5、及び6に記載されている。また表1を参照すると、図1Bは、脱ガスのみが行われたlow-k材料、H2ガス中で熱処理(非プラズマ)されたlow-k材料、又は高い気体圧力のNH3ガスでのプラズマ処理でRu金属堆積の選択率が最高となったことを示している。比較すると、処理条件#4)、#5)、#7)、及び#9)を用いてプラズマ処理されたlow-k材料ではRu金属堆積の選択性は顕著に減少した。
Claims (15)
- 半導体デバイスの製造方法であって:
プラズマ処理チャンバ内で基板ホルダ上にパターニングされた基板を供する工程であって、前記パターニングされた基板は、low-k誘電材料内に形成された凹部構造と該凹部構造の底部に設けられた第1メタライゼーション層を有する、基板提供工程;
前記プラズマ処理チャンバ内において1Torrよりも大きな圧力でNH3を含む第1処理気体からプラズマを生成して、NHx(x≦3)ラジカル及びHラジカルを生成する、プラズマ生成工程;
前記NHx(x≦3)ラジカル及びHラジカルによって、前記パターニングされた基板を処理する工程であって、前記プラズマ処理チャンバ内の1Torrよりも大きな気体圧力が、前記パターニングされた基板の前記プラズマからのイオンへの曝露を抑制する、基板処理工程;
前記第1メタライゼーション層上に第1Ru金属キャップ層を形成する第1金属キャップ層形成工程;
前記low-k誘電材料上及び前記第1Ru金属キャップ層上を含む前記凹部構造内にバリア層を堆積するバリア層堆積工程;並びに
前記凹部構造を銅(Cu)金属で充填する凹部構造充填工程;
を有する方法。 - 前記基板処理工程が、100W未満のRF電力を前記基板ホルダへ印加することによって、前記第1処理気体からプラズマを生成する工程をさらに有する、請求項1に記載の方法。
- 前記金属キャップ層形成工程が、前記low-k誘電材料上に対して前記第1メタライゼーション層上で選択的に第1Ru金属キャップ層を堆積する工程を有する、請求項1に記載の方法。
- 前記第1処理気体がNH3からなる、請求項1に記載の方法。
- 前記low-k誘電材料がSiCOH材料を有する、請求項1に記載の方法。
- 前記金属キャップ層形成工程が、熱化学気相成長法によって、Ru3(CO)12前駆体蒸気及びCO気体を含む堆積気体に前記パターニングされた基板を曝露する工程を有する、請求項1に記載の方法。
- 前記凹部構造充填工程に続いて、Cuパス及びlow-k誘電体領域を有する平坦な面を同一の水平面内に形成する平坦面形成工程;
前記プラズマ処理チャンバ内において1Torrよりも大きな圧力でNH3を含む第1処理気体からプラズマを生成して、NHx(x≦3)ラジカル及びHラジカルを生成する、プラズマ生成工程;
NH3を含む第2処理気体から、前記プラズマ処理チャンバ内に生成されるNHx(x≦3)ラジカル及びHラジカルによって、前記Cuパス及び前記low-k誘電体領域を処理する工程であって、前記プラズマ処理チャンバ内の1Torrよりも大きな気体圧力が、前記Cuパス及び前記low-k誘電体領域の前記プラズマからのイオンへの曝露を抑制する、処理工程;並びに、
前記の処理されたCuパス上に第2Ru金属キャップ層を形成する第2金属キャップ層形成工程;
を有する、請求項1に記載の方法。 - 前記処理工程が、100W未満のRF電力を前記基板ホルダへ印加することによって、前記第2処理気体からプラズマを生成する工程をさらに有する、請求項7に記載の方法。
- 半導体デバイスの製造方法であって:
プラズマ処理チャンバ内の基板ホルダ上にパターニングされた基板を供する工程であって、前記パターニングされた基板はCuパス及びlow-k誘電体領域を有する平坦な面を同一の水平面内に有する、基板提供工程;
前記プラズマ処理チャンバ内において1Torrよりも大きな圧力でNH3を含む第1処理気体からプラズマを生成して、NHx(x≦3)ラジカル及びHラジカルを生成する、プラズマ生成工程;
NH3を有する処理気体から前記プラズマ処理チャンバ内に生成されるNHx(x≦3)ラジカル及びHラジカルによって、前記Cuパス及び前記low-k誘電体領域を処理する工程であって、前記プラズマ処理チャンバ内の1Torrよりも大きな気体圧力が、前記パターニングされた基板の前記プラズマからのイオンへの曝露を抑制する、処理工程;並びに、
前記の処理されたCuパス上にRu金属キャップ層を形成する金属キャップ層形成工程;
を有する方法。 - 前記処理工程が、100W未満のRF電力を前記基板ホルダへ印加することによって、前記処理気体からプラズマを生成する工程をさらに有する、請求項9に記載の方法。
- 前記金属キャップ層形成工程が、前記low-k誘電材料上に対して前記Cuパス上で選択的にRu金属キャップ層を堆積する工程を有する、請求項9に記載の方法。
- 前記処理気体がNH3からなる、請求項9に記載の方法。
- 前記low-k誘電材料がSiCOH材料を有する、請求項9に記載の方法。
- 前記金属キャップ層形成工程が、熱化学気相成長法によって、Ru3(CO)12前駆体蒸気及びCO気体を含む堆積気体に前記パターニングされた基板を曝露する工程を有する、請求項9に記載の方法。
- 半導体デバイスの製造方法であって:
プラズマ処理チャンバ内にパターニングされた基板を供する工程であって、前記パターニングされた基板は、low-k誘電材料内に形成された凹部構造と該凹部構造の底部に設けられた第1メタライゼーション層を有する、基板提供工程;
前記プラズマ処理チャンバ内において1Torrよりも大きな圧力でNH3を含む第1処理気体からプラズマを生成して、NHx(x≦3)ラジカル及びHラジカルを生成する、プラズマ生成工程;
前記NHx(x≦3)ラジカル及びHラジカルによって、前記パターニングされた基板を処理する工程であって、前記プラズマ処理チャンバ内の1Torrよりも大きな気体圧力が、前記パターニングされた基板の前記プラズマからのイオンへの曝露を抑制する、基板処理工程;
前記第1メタライゼーション層上に第1Ru金属キャップ層を選択的に形成する工程であって、第1Ru金属キャップ層は前記第1メタライゼーション層と直接接触する、第1Ru金属キャップ層形成工程;
前記low-k誘電材料上及び前記第1Ru金属キャップ層上を含む前記凹部構造内にバリア層を堆積するバリア層堆積工程;並びに
前記凹部構造を銅(Cu)金属で充填する凹部構造充填工程;
を有する方法。
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US12/240,894 | 2008-09-29 | ||
US12/240,894 US20100081274A1 (en) | 2008-09-29 | 2008-09-29 | Method for forming ruthenium metal cap layers |
PCT/US2009/058689 WO2010037074A1 (en) | 2008-09-29 | 2009-09-29 | Method for forming ruthenium metal cap layers |
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US20100084766A1 (en) | 2008-10-08 | 2010-04-08 | International Business Machines Corporation | Surface repair structure and process for interconnect applications |
US8242019B2 (en) * | 2009-03-31 | 2012-08-14 | Tokyo Electron Limited | Selective deposition of metal-containing cap layers for semiconductor devices |
US8168528B2 (en) * | 2009-06-18 | 2012-05-01 | Kabushiki Kaisha Toshiba | Restoration method using metal for better CD controllability and Cu filing |
US8178439B2 (en) | 2010-03-30 | 2012-05-15 | Tokyo Electron Limited | Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices |
US9673037B2 (en) * | 2011-05-31 | 2017-06-06 | Law Research Corporation | Substrate freeze dry apparatus and method |
JP5140184B1 (ja) * | 2011-08-03 | 2013-02-06 | 田中貴金属工業株式会社 | 化学蒸着原料用の有機ルテニウム化合物及び該有機ルテニウム化合物の製造方法 |
KR101444527B1 (ko) * | 2011-08-05 | 2014-09-24 | 도쿄엘렉트론가부시키가이샤 | 반도체 장치의 제조 방법 |
JP5862353B2 (ja) * | 2011-08-05 | 2016-02-16 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
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2009
- 2009-09-29 CN CN200980138541.8A patent/CN102165573B/zh not_active Expired - Fee Related
- 2009-09-29 JP JP2011529340A patent/JP5674669B2/ja not_active Expired - Fee Related
- 2009-09-29 KR KR1020117006624A patent/KR101532814B1/ko not_active IP Right Cessation
- 2009-09-29 WO PCT/US2009/058689 patent/WO2010037074A1/en active Application Filing
- 2009-09-29 TW TW098132898A patent/TWI436428B/zh not_active IP Right Cessation
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TWI436428B (zh) | 2014-05-01 |
KR20110081155A (ko) | 2011-07-13 |
JP2012504347A (ja) | 2012-02-16 |
KR101532814B1 (ko) | 2015-06-30 |
CN102165573B (zh) | 2015-07-29 |
WO2010037074A1 (en) | 2010-04-01 |
CN102165573A (zh) | 2011-08-24 |
TW201027625A (en) | 2010-07-16 |
US20100081274A1 (en) | 2010-04-01 |
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