JP4572312B2 - Led及びその製造方法 - Google Patents
Led及びその製造方法 Download PDFInfo
- Publication number
- JP4572312B2 JP4572312B2 JP2004338624A JP2004338624A JP4572312B2 JP 4572312 B2 JP4572312 B2 JP 4572312B2 JP 2004338624 A JP2004338624 A JP 2004338624A JP 2004338624 A JP2004338624 A JP 2004338624A JP 4572312 B2 JP4572312 B2 JP 4572312B2
- Authority
- JP
- Japan
- Prior art keywords
- led
- horn
- silicon substrate
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004338624A JP4572312B2 (ja) | 2004-02-23 | 2004-11-24 | Led及びその製造方法 |
| US11/062,772 US20060001055A1 (en) | 2004-02-23 | 2005-02-22 | Led and fabrication method of same |
| DE102005008339A DE102005008339A1 (de) | 2004-02-23 | 2005-02-23 | Leuchtdiode (LED) und Herstellungsverfahren dafür |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004046173 | 2004-02-23 | ||
| JP2004338624A JP4572312B2 (ja) | 2004-02-23 | 2004-11-24 | Led及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005277380A JP2005277380A (ja) | 2005-10-06 |
| JP2005277380A5 JP2005277380A5 (enExample) | 2007-03-29 |
| JP4572312B2 true JP4572312B2 (ja) | 2010-11-04 |
Family
ID=34980776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004338624A Expired - Fee Related JP4572312B2 (ja) | 2004-02-23 | 2004-11-24 | Led及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20060001055A1 (enExample) |
| JP (1) | JP4572312B2 (enExample) |
| DE (1) | DE102005008339A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220254705A1 (en) * | 2021-02-08 | 2022-08-11 | Jentech Precision Industrial Co., Ltd. | Lead frame structure and manufacturing method thereof |
Families Citing this family (159)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI302382B (en) * | 2004-09-15 | 2008-10-21 | Yu Nung Shen | Light emitting diode package and its packaging method |
| US20060125716A1 (en) * | 2004-12-10 | 2006-06-15 | Wong Lye Y | Light-emitting diode display with compartment |
| BRPI0519478A2 (pt) | 2004-12-27 | 2009-02-03 | Quantum Paper Inc | display emissivo endereÇÁvel e imprimÍvel |
| JP4698234B2 (ja) * | 2005-01-21 | 2011-06-08 | スタンレー電気株式会社 | 表面実装型半導体素子 |
| JP2006210402A (ja) * | 2005-01-25 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| KR100663906B1 (ko) * | 2005-03-14 | 2007-01-02 | 서울반도체 주식회사 | 발광 장치 |
| US20070200133A1 (en) * | 2005-04-01 | 2007-08-30 | Akira Hashimoto | Led assembly and manufacturing method |
| EP1878062A2 (en) * | 2005-04-28 | 2008-01-16 | Koninklijke Philips Electronics N.V. | Light source comprising led arranged in recess |
| US20060292747A1 (en) * | 2005-06-27 | 2006-12-28 | Loh Ban P | Top-surface-mount power light emitter with integral heat sink |
| KR101232505B1 (ko) * | 2005-06-30 | 2013-02-12 | 엘지디스플레이 주식회사 | 발광다이오드 패키지 제조방법, 백라이트 유닛 및액정표시장치 |
| JP3978456B2 (ja) * | 2005-11-02 | 2007-09-19 | 株式会社トリオン | 発光ダイオード実装基板 |
| JP2007134602A (ja) * | 2005-11-11 | 2007-05-31 | Stanley Electric Co Ltd | 表面実装型半導体発光装置 |
| KR100780176B1 (ko) * | 2005-11-25 | 2007-11-27 | 삼성전기주식회사 | 측면 방출 발광다이오드 패키지 |
| JP4817820B2 (ja) * | 2005-12-01 | 2011-11-16 | スタンレー電気株式会社 | Ledパッケージ、発光装置及びledパッケージの製造方法 |
| JP2007157805A (ja) * | 2005-12-01 | 2007-06-21 | Stanley Electric Co Ltd | Ledパッケージ、発光装置及びledパッケージの製造方法 |
| KR100734881B1 (ko) * | 2005-12-08 | 2007-07-03 | 한국전자통신연구원 | 측면 반사경을 이용한 실리콘 발광소자 |
| JP2007288097A (ja) * | 2006-04-20 | 2007-11-01 | Showa Denko Kk | フリップチップ型半導体発光素子用の実装基板、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ |
| JP4996096B2 (ja) * | 2006-01-06 | 2012-08-08 | 新光電気工業株式会社 | 発光装置及びその製造方法 |
| JP2007194385A (ja) * | 2006-01-19 | 2007-08-02 | Stanley Electric Co Ltd | 半導体発光装置及び半導体発光装置の製造方法 |
| US8044412B2 (en) * | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
| JP4955422B2 (ja) * | 2006-03-08 | 2012-06-20 | 三菱電機株式会社 | 発光装置 |
| JP2007266313A (ja) * | 2006-03-28 | 2007-10-11 | Matsushita Electric Works Ltd | 発光装置 |
| JP5192666B2 (ja) * | 2006-03-28 | 2013-05-08 | パナソニック株式会社 | 発光装置 |
| JP2007266314A (ja) * | 2006-03-28 | 2007-10-11 | Matsushita Electric Works Ltd | 発光装置 |
| US20090057687A1 (en) * | 2006-04-10 | 2009-03-05 | Koninklijke Philips Electronics N.V. | Light emitting diode module |
| EP1848042A1 (en) | 2006-04-21 | 2007-10-24 | LEXEDIS Lighting GmbH | LED package with submount |
| JP4710713B2 (ja) * | 2006-05-17 | 2011-06-29 | 市光工業株式会社 | 発光ダイオードの固定構造 |
| KR100735432B1 (ko) * | 2006-05-18 | 2007-07-04 | 삼성전기주식회사 | 발광소자 패키지 및 발광소자 패키지 어레이 |
| US8866007B2 (en) * | 2006-06-07 | 2014-10-21 | California Institute Of Technology | Plasmonic photovoltaics |
| JP2008016565A (ja) * | 2006-07-04 | 2008-01-24 | Shinko Electric Ind Co Ltd | 発光素子収容体及びその製造方法、及び発光装置 |
| KR100854328B1 (ko) * | 2006-07-07 | 2008-08-28 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
| US20090273005A1 (en) * | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Opto-electronic package structure having silicon-substrate and method of forming the same |
| US20090273004A1 (en) * | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Chip package structure and method of making the same |
| JP5192667B2 (ja) * | 2006-07-26 | 2013-05-08 | パナソニック株式会社 | 発光装置 |
| JP5148849B2 (ja) | 2006-07-27 | 2013-02-20 | スタンレー電気株式会社 | Ledパッケージ、それを用いた発光装置およびledパッケージの製造方法 |
| TWI418054B (zh) | 2006-08-08 | 2013-12-01 | Lg電子股份有限公司 | 發光裝置封裝與製造此封裝之方法 |
| US7763478B2 (en) * | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
| DE102006040641A1 (de) * | 2006-08-30 | 2008-03-13 | Robert Bosch Gmbh | Leuchtmodul |
| US8283683B2 (en) | 2006-11-07 | 2012-10-09 | Opto Tech Corporation | Chip-bonding light emitting diode chip |
| TWI324403B (en) * | 2006-11-07 | 2010-05-01 | Opto Tech Corp | Light emitting diode and method manufacturing the same |
| JP4963950B2 (ja) * | 2006-12-12 | 2012-06-27 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
| TWI338385B (en) * | 2006-12-13 | 2011-03-01 | Silicon Base Dev Inc | Side light package structure of light diode and its producing method |
| JP4836769B2 (ja) * | 2006-12-18 | 2011-12-14 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
| US9061450B2 (en) | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
| US7732234B2 (en) * | 2007-02-15 | 2010-06-08 | Hymite A/S | Fabrication process for package with light emitting device on a sub-mount |
| JP5179766B2 (ja) * | 2007-03-08 | 2013-04-10 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
| EP1988577B1 (en) * | 2007-04-30 | 2017-04-05 | Tridonic Jennersdorf GmbH | Light emitting diode module with silicon platform |
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| US8384630B2 (en) | 2007-05-31 | 2013-02-26 | Nthdegree Technologies Worldwide Inc | Light emitting, photovoltaic or other electronic apparatus and system |
| US9018833B2 (en) | 2007-05-31 | 2015-04-28 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting or absorbing diodes |
| US7972031B2 (en) * | 2007-05-31 | 2011-07-05 | Nthdegree Technologies Worldwide Inc | Addressable or static light emitting or electronic apparatus |
| US9343593B2 (en) | 2007-05-31 | 2016-05-17 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
| US8877101B2 (en) | 2007-05-31 | 2014-11-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, power generating or other electronic apparatus |
| US9425357B2 (en) | 2007-05-31 | 2016-08-23 | Nthdegree Technologies Worldwide Inc. | Diode for a printable composition |
| US8852467B2 (en) | 2007-05-31 | 2014-10-07 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a printable composition of a liquid or gel suspension of diodes |
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| US11984385B2 (en) * | 2021-02-08 | 2024-05-14 | Jentech Precision Industrial Co., Ltd. | Lead frame structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060001055A1 (en) | 2006-01-05 |
| DE102005008339A1 (de) | 2005-10-06 |
| JP2005277380A (ja) | 2005-10-06 |
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