JP4562828B2 - 発光半導体を備えた半導体装置 - Google Patents
発光半導体を備えた半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 71
- 239000000463 material Substances 0.000 claims description 63
- 239000010410 layer Substances 0.000 claims description 48
- 229920005989 resin Polymers 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 46
- 125000006850 spacer group Chemical group 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Description
【発明の属する技術分野】
本発明は、一般に、発光ダイオードに関するものであり、とりわけ、蛍光材料(fluorescent material)を利用する発光ダイオードに関するものである。
【0002】
【従来の技術】
現在、青色の発光ダイオードすなわちLEDは、白色光を放出するLEDデバイスを得るため、蛍光材料と組み合わせて用いられている。白色光は、一般に、波長が400〜600ナノメートル(nm)の範囲にわたって均一であるが、赤色、青色、及び、緑色の組み合わせとして生じる光は、やはり白色に見える。LEDにインジウム・ガリウム窒化物を用いることによって、強い青色光を生じることが可能である。一般に、より強度の低い赤色及び緑色光、及び、より強度の高い青色光を発生する蛍光物質(phosphor)を用いることによって、白色に見える強い光を発生することが可能である。基本的に、470nmの青色光の大部分は、蛍光材料中の蛍光物質にぶつかって、アップシフトされ(up-shifted)、二次緑色及び赤色光が、蛍光物質を通って脱出する残りの青色光を補うことになる。これによって、人間の目に白色に見える光の最終的組み合わせが得られる。
【0003】
あいにく、青色LED上に層をなす蛍光材料を利用する従来のアプローチでは、明るい白色の中心部が、黄色の環状リング、それに続く青色の環状リング、それに続く黄色の最終環状リングで包囲された、LEDが得られることが分かっている。これらの環状リングは、必ずしも、LED毎に予測可能に生じるとは限らないので、比較的均一な白色光を生じるLEDもあれば、環状リングに変動を生じるLEDもある。
【0004】
これらのリングの原因を確認するのは困難であり、従って、この問題を解決する方法を決定するのは困難であった。顧客は、白色からの偏差(逸脱)をLEDの欠陥とみなすので、品質管理において、多数のLEDを廃棄しなければならない。
【0005】
以上の問題は、LEDランプ並びに表面実装(surface-mount)LED灯の両方に生じる。
【0006】
【発明が解決しようとする課題】
本発明の目的は、上述の問題点を解決し、一定して均一な白色光LEDが得られるようにすることにある。
【0007】
【課題を解決するための手段】
本半導体灯は、透明スペーサによって被われた発光ダイオードを備えている。蛍光材料がより均一に照明されて、一定して均一な白色光LEDが得られるように、透明スペーサによって、LEDが蛍光材料から分離されている。これによって、黄色及び/または青色光を放出する、白色半導体灯に関する前者の問題が解消される。
【0008】
本発明の利点については、当該技術者には、添付の図面と関連づけて考察すれば、以下の詳細な説明を読むことによって明らかになるであろう。
【0009】
【発明の実施の形態】
次に、図1(先行技術)を参照すると、発光ダイオード(LED)・ランプが示されている。LEDランプ10は、LEDランプ10に電力を供給する第1と第2の端子、または、リード・フレーム12及び14を備えている。リード・フレーム12は、LED18が配置された凹型反射領域16を備えている。LEDは、透明なサファイア基板上のインジウムをドープした(indium-doped)窒化ガリウムのエピタキシャル層から造られている。適正な順電圧での直流電流によって作動させると、インジウムをドープした窒化ガリウムのLEDの上部表面には、波長が約470nmの青色光が生じる。
【0010】
LED18は、ワイヤ・ボンド20によってリード・フレーム12に接続され、ワイヤ・ボンド22によってリード・フレーム14に接続されている。LED18上には蛍光材料24の層が配置されている。蛍光材料24は、一般に、YAG/Gd:Ce蛍光物質の粒子を含む透明なエポキシ樹脂である。アセンブリ全体が、透明なカプセル封止(encapsulation)エポキシ樹脂26に埋め込まれている。
【0011】
図1(先行技術)には、環状青色リングの光線を表した矢印28及び30も示されている。矢印32及び34は、外側環状リングの光線を表し、矢印36及び38は、内側黄色環状リングを表している。
【0012】
次に図2(先行技術)を参照すると、LED18を保持するカップを形成する反射部分16を備えた、リード・フレーム12が示されている。薄い領域40及び42とより厚い領域44を備えた蛍光材料24の層が、さらに拡大して示されている。簡略化のため、最終的なカプセル封止エポキシ樹脂26は示されていない。
【0013】
次に図3を参照すると、LED18を保持するリフレクタ16を備えたリード・フレーム12が示されている。先行技術と同様の部品は、同じ番号で示されている。LED18をカプセル封止する透明なスペーサ50が示されており、透明スペーサ50よりある高さだけ上方に配置された蛍光材料52が示されている。
最終的なカプセル封止エポキシ樹脂26は、簡略化のため示されていない。
【0014】
次に図4を参照すると、表面実装装置の装置基板62に配置された表面実装LED灯60が示されている。LED60が、透明スペーサ64にカプセル封止されており、透明スペーサ64は、さらに、蛍光材料の層66及び最終的な透明カプセル封止層68によって被われている。
【0015】
動作時、図1のLEDランプ10(先行技術)は、LEDのどの部分がp接合で、どの部分がn接合であるかに従って、リード・フレーム12または14に電力が給与される。電力が給与されると、LED18の上部は、強い青色光を放出する。領域44に、適正な厚さの蛍光材料が与えられると、約470nmの青色光と、それぞれ、500nmと550nmの緑色及び赤色蛍光が適正に組み合わせられて、白色光が生じることになる。
【0016】
図2(先行技術)に示す領域40及び42において、蛍光材料の層が比較的薄い場合、蛍光物質からの光の影響が不十分であるため、青色光は、一般に、光線のライン28及び30に沿って青色環状リングを生じることになる。環状青色リングの内側及び外側には、光線32及び34と光線36及び38による黄色環状リングが生じるが、この場合、蛍光物質は光の一部に影響を及ぼすものの、均一な白色光を生じさせるには不十分である。
【0017】
LED18上の材料24の表面張力によって、LED18のコーナに近い領域40及び42の厚さから、LEDの中心の上方における領域44の厚さに及ぶ、さまざまな厚さの領域が生じる。この結果、青色光の不均一な再放射及び前述の環状リングが生じる。これは、蛍光材料24の層が、LED18の上及びまわりに配置されている場合に固有のように思われる。
【0018】
図3に示す本発明の場合、LED18の上及びまわりに透明スペーサ50を堆積させ、LED18からほぼ均一な厚さの蛍光材料の層52を分離することによって、環状リングが排除されることが確認された。また、蛍光材料の層52がLEDの上方で均一な厚さになるように、透明スペーサ50とLED18の上部をちょうど同じ高さにすることも可能であり、これによって、やはりこの問題が解消されることが確認されている。しかし、この後者のアプローチは、円錐状反射領域16によって形成されるカップにおける透明スペーサ50のより慎重な体積配分が必要とされる。
【0019】
図4に示す表面実装LED灯の場合、表面張力(LED18のサイズでは、重力に比べて大きい)と粘性の組み合わせを利用して、半球形一杯分の透明な紫外線(UV)硬化樹脂をLED18の上に滴下させ、透明スペーサ60を形成することが可能である。この樹脂は、全てのコーナを被覆し、その後、UV光を利用して硬化させられる。これに、やはり、粘性のUV硬化樹脂である、蛍光材料の層66が後続する。透明スペーサ64の堆積によって、液滴としての半球が生じ、次に、蛍光材料の層66が流れて、透明スペーサ64の半球形状と同じ形状になり、最終カプセル封止68及び硬化の前に、硬化する。蛍光材料の層66は、厚さが均一になるので、環状リングの問題は生じない。
【0020】
熱硬化性による粘性が通常の滴下では、小さいサイズにもかかわらず、ほとんどの樹脂、通常エポキシ、がLED18から流れ出てしまうので、UV硬化のような高速硬化を行うことが必要になる。その後で、最終カプセル封止層68を堆積させることが可能になる。
【0021】
特定の最良の態様に関連して、本発明の解説を行ってきたが、もちろん、当該技術者には、以上の説明に鑑みて、多くの代替、修正、及び、変更案が明らかになるであろう。従って、それは、付属の請求項の精神及び範囲内にあるこうした全ての代替、修正、及び、変更案を包含することを意図したものである。本明細書に記載され、添付の図面に示された全ての事項は、例証を意味するものであって、制限を意味するものではないと解釈すべきである。
【0022】
以上、本発明の実施例について詳述したが、以下、本発明の各実施態様の例を示す。
【0023】
(実施態様1)
半導体装置であって、
発光半導体(18、60)と、
前記発光半導体(18、60)のまわりに配置された透明スペーサ(50、64)と、
前記発光半導体(18、60)及び前記透明スペーサ(50、64)の上に配置された蛍光材料を含む層(52、66)と、
前記発光半導体(18、60)に接続されて、前記発光半導体に付勢し、発光させる入力端子(12、14、62)と
を有する半導体装置。
【0024】
(実施態様2)
前記透明スペーサ(50、64)が、前記発光半導体(18、60)の上に配置されることと、前記蛍光材料を含む層(52、66)が、前記透明スペーサ(50、64)によって、前記発光半導体(18、60)から間隔をあけて配置されることを特徴とする、実施態様1に記載の半導体装置。
【0025】
(実施態様3)
前記蛍光材料を含む層(66、52)の上に配置された保護層(68、26)が含まれることを特徴とする、実施態様1に記載の半導体装置。
【0026】
(実施態様4)
前記入力端子(12)の1つが、前記発光半導体(18)のリフレクタ(16)を形成することを特徴とする、実施態様1に記載の半導体装置。
【0027】
(実施態様5)
前記発光半導体(18、60)が、前記蛍光材料を含む層(52、66)によって部分的に別の波長に変換され、所定の波長の光を放出することを特徴とする、実施態様1に記載の半導体装置。
【0028】
(実施態様6)
前記発光半導体(18、60)が、青色光を放出することと、
前記蛍光材料を含む層(52、66)に、前記青色光の大部分に反応して、前記青色光の残りの部分と結合可能な光を発生し、それによって白色光が得られるようにする蛍光物質が含まれていることと
を特徴とする実施態様1に記載の半導体装置。
【0029】
(実施態様7)
半導体装置であって、
発光ダイオードと、
前記発光ダイオードのまわりに配置された透明なカプセル封止樹脂と、
前記発光ダイオード及び前記透明なカプセル封止樹脂の上に配置された蛍光材料を含む樹脂と、
前記発光ダイオードに接続されて、前記発光ダイオードに付勢し、発光させる入力端子と
を有する半導体装置。
【0030】
(実施態様8)
前記透明なカプセル封止樹脂が、前記発光ダイオードの上に配置されることと、前記蛍光材料を含む前記樹脂が、前記透明なカプセル封止樹脂によって、前記発光ダイオードから間隔をあけて配置されることと、前記蛍光材料を含む前記樹脂が、ほぼ均一な厚さであることとを特徴とする、実施態様7に記載の半導体装置。
【0031】
(実施態様9)
前記蛍光材料を含む前記樹脂の上に配置された保護樹脂層が含まれることを特徴とする、実施態様7に記載の半導体装置。
【0032】
(実施態様10)
前記入力端子の1つが、前記発光ダイオード用のリフレクタ、及び、前記樹脂用のカップを形成することを特徴とする、実施態様7に記載の半導体装置。
【0033】
(実施態様11)
前記発光ダイオードを配置し、前記樹脂を滴下した装置基板が含まれていることを特徴とする、実施態様7に記載の半導体装置。
【0034】
(実施態様12)
前記発光ダイオードが、前記蛍光材料によって部分的に別の波長に変換されて、均一な白色光を生じることになる、所定の波長の光を放出することを特徴とする、実施態様7に記載の半導体装置。
【0035】
(実施態様13)
前記発光ダイオードが、青色光を放出することと、
前記蛍光材料に、前記青色光に反応して、緑色光を生じる第1の蛍光物質と、前記青色光に反応して、赤色光を生じる第2の蛍光物質が含まれていることと、前記蛍光材料が、それを通る前記青色光、及び、それから放出される前記赤色及び前記緑色光から白に見える光を生じることを特徴とする、
実施態様7に記載の半導体装置。
【0036】
(実施態様14)
半導体装置であって、
サファイア基板と、
前記サファイア層の上に配置されて、発光ダイオードを形成する、インジウムをドープした窒化ガリウムのエピタキシャル層と、
前記サファイア基板のまわりに配置された透明なカプセル封止樹脂と、
前記エピタキシャル層の上に配置される樹脂及び前記透明なカプセル封止樹脂を含むYAG/Gd:Ce蛍光物質と、
前記エピタキシャル層に接続されて、前記エピタキシャル層に付勢し、光を放出させる入力端子が含まれている、
半導体装置。
【0037】
(実施態様15)
前記透明なカプセル封止樹脂が、前記エピタキシャル層の上に配置され、樹脂を含む前記蛍光物質が、前記透明なカプセル封止樹脂によって前記エピタキシャル層から間隔をあけて配置されることを特徴とする、実施態様14に記載の半導体装置。
【0038】
(実施態様16)
前記蛍光物質を含む樹脂の上に配置された保護層が含まれることを特徴とする、実施態様14に記載の半導体装置。
【0039】
(実施態様17)
前記入力端子の1つが、前記サファイア基板上において前記エピタキシャル層用のリフレクタを形成することを特徴とする、実施態様14に記載の半導体装置。
【0040】
(実施態様18)
前記サファイア基板を配置した装置基板が含まれることを特徴とする、実施態様14に記載の半導体装置。
【0041】
(実施態様19)
前記エピタキシャル層が、前記蛍光物質を含む樹脂によって部分的に別の波長に変換されて、均一な白に見える光を生じることになる、所定の波長の光を放出することを特徴とする、実施態様14に記載の半導体装置。
【0042】
(実施態様20)
前記エピタキシャル層が、青色光を生じることと、
前記YAG/Gd:Ce蛍光物質を含む樹脂が、前記青色光の大部分に反応して、緑色及び赤色光を放出することと、
前記YAG/Gd:Ce蛍光物質を含む樹脂が、それから放出される前記緑色及び赤色光と、それを通る前記残りの青色光から白に見える光を生じることを特徴とする、
実施態様14に記載の半導体装置。
【0043】
【発明の効果】
以上のように、本発明を用いると、透明スペーサによって被われた発光ダイオードを備えているので、蛍光材料がより均一に照明され、一定して均一な白色光LEDが得られる。これによって、黄色及び/または青色光を放出する、白色半導体灯に関する問題が解消される。
【図面の簡単な説明】
【図1】従来のLEDランプの断面図である。
【図2】先行技術によるLED及びそのカプセル封止システムの拡大図である。
【図3】本発明のカプセル封止システムを備えたLEDの拡大図である。
【図4】本発明のカプセル封止システムを利用した、表面実装装置におけるLEDの拡大図である。
【符号の説明】
10:LEDランプ
12、14:リード・フレーム
16:凹型反射領域
18:LED
20、22:ワイヤ・ボンド
24:蛍光材料
26:カプセル封止エポキシ樹脂
28、30:環状青色リングの光線
32、34:外側黄色環状リングの光線
36、38:内側黄色環状リングの光線
40、42:薄い領域
44:厚い領域
50:透明スペーサ
52:蛍光材料
60:LED
62:表面実装装置の装置基板
64:透明スペーサ
66:蛍光材料の層
68:カプセル封止層
Claims (19)
- 半導体装置であって、
青色光を発光する発光半導体(18、60)と、
前記発光半導体(18、60)をカプセル封止するよう配置された半球形の透明スペーサ(50、64)と、
前記透明スペーサ(50、64)の上に配置された、厚さがほぼ均一の蛍光材料を含む層(52、66)と、
前記発光半導体(18、60)に接続されて、前記発光半導体に電力を供給し、発光させるリード・フレーム(12、14、62)と
を有する半導体装置。 - 前記透明スペーサ(50、64)が、前記発光半導体(18、60)の上に配置されることと、前記蛍光材料を含む層(52、66)が、前記透明スペーサ(50、64)によって、前記発光半導体(18、60)から間隔をあけて配置されることを特徴とする、請求項1に記載の半導体装置。
- 前記蛍光材料を含む層(66、52)の上に配置された保護層(68、26)が含まれることを特徴とする、請求項1に記載の半導体装置。
- 前記リード・フレーム(12)の1つが、前記発光半導体(18)のリフレクタ(16)を形成することを特徴とする、請求項1に記載の半導体装置。
- 前記発光半導体(18、60)が、前記蛍光材料を含む層(52、66)によって部分的に別の波長に変換され、所定の波長の光を放出することを特徴とする、請求項1に記載の半導体装置。
- 前記発光半導体(18、60)が、青色光を放出することと、
前記蛍光材料を含む層(52、66)に、前記青色光の大部分に反応して、前記青色光の残りの部分と結合可能な光を発生し、それによって白色光が得られるようにする蛍光物質が含まれていることと
を特徴とする請求項1に記載の半導体装置。 - 半導体装置であって、
青色光を発光する発光ダイオードと、
前記発光ダイオードをカプセル封止するよう配置された三次元方向に延びる層である半球形の透明なカプセル封止樹脂と、
前記透明なカプセル封止樹脂の上に配置され、三次元方向に延びる厚さがほぼ均一の蛍光材料を含む樹脂であって、その上に保護樹脂層が配置された、前記蛍光材料を含む前記樹脂と、
前記発光ダイオードに接続されて、前記発光ダイオードに電力を供給し、発光させるリード・フレームと
を有する半導体装置。 - 前記透明なカプセル封止樹脂が、前記発光ダイオードの上に配置されることと、前記蛍光材料を含む前記樹脂が、前記透明なカプセル封止樹脂によって、前記発光ダイオードから間隔をあけて配置されることと、前記蛍光材料を含む前記樹脂が、ほぼ均一な厚さであることとを特徴とする、請求項7に記載の半導体装置。
- 前記リード・フレームの1つが、前記発光ダイオード用のリフレクタ、及び、前記樹脂用のカップを形成することを特徴とする、請求項7に記載の半導体装置。
- 前記リード・フレームには、前記発光ダイオードが配置され、前記樹脂が滴下されていることを特徴とする、請求項7に記載の半導体装置。
- 前記発光ダイオードが、前記蛍光材料によって部分的に別の波長に変換されて、均一な白色光を生じることになる、所定の波長の青色光を放出することを特徴とする、請求項7に記載の半導体装置。
- 前記発光ダイオードが、青色光を放出することと、
前記蛍光材料に、前記青色光に反応して、緑色光を生じる第1の蛍光物質と、前記青色光に反応して、赤色光を生じる第2の蛍光物質が含まれていることと、
前記蛍光材料が、それを通る前記青色光、及び、それから放出される前記赤色及び前記緑色光から白に見える光を生じることを特徴とする、
請求項7に記載の半導体装置。 - 半導体装置であって、
サファイア基板と、
前記サファイア層の上に配置されて、青色光を発光する発光ダイオードを形成する、インジウムをドープした窒化ガリウムのエピタキシャル層と、
前記サファイア基板のまわりに配置された、エピタキシャル層をカプセル封止する透明な半球状のカプセル封止樹脂と、
前記カプセル封止樹脂の上に配置される厚さがほぼ均一の樹脂に含まれるYAG/Gd:Ce蛍光物質と、
前記エピタキシャル層に接続されて、前記エピタキシャル層に電力を供給し、青色光を放出させるリード・フレームが含まれている、
半導体装置。 - 前記透明なカプセル封止樹脂が、前記エピタキシャル層の上に配置され、樹脂を含む前記蛍光物質が、前記透明なカプセル封止樹脂によって前記エピタキシャル層から間隔をあけて配置されることを特徴とする、請求項13に記載の半導体装置。
- 前記蛍光物質を含む樹脂の上に配置された保護層が含まれることを特徴とする、請求項13に記載の半導体装置。
- 前記リード・フレームの1つが、前記サファイア基板上において前記エピタキシャル層用のリフレクタを形成することを特徴とする、請求項13に記載の半導体装置。
- 前記リード・フレームには、前記サファイア基板が配置されていることを特徴とする、請求項13に記載の半導体装置。
- 前記エピタキシャル層が、前記蛍光物質を含む樹脂によって部分的に別の波長に変換されて、均一な白に見える光を生じることになる、所定の波長の青色光を放出することを特徴とする、請求項13に記載の半導体装置。
- 前記エピタキシャル層が、青色光を生じることと、
前記YAG/Gd:Ce蛍光物質を含む樹脂が、前記青色光の大部分に反応して、緑色及び赤色光を放出することと、
前記YAG/Gd:Ce蛍光物質を含む樹脂が、それから放出される前記緑色及び赤色光と、それを通る前記残りの青色光から白に見える光を生じることを特徴とする、
請求項13に記載の半導体装置。
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US09/144,744 US5959316A (en) | 1998-09-01 | 1998-09-01 | Multiple encapsulation of phosphor-LED devices |
US144,744 | 1998-09-01 |
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JPH11500584A (ja) * | 1996-09-20 | 1999-01-12 | シーメンス アクチエンゲゼルシヤフト | 波長変換する注型材料、その使用方法及びその製造方法 |
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JP2000031532A (ja) * | 1998-07-14 | 2000-01-28 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
JP2000031547A (ja) * | 1998-07-09 | 2000-01-28 | Stanley Electric Co Ltd | 面状光源 |
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JPH0799345A (ja) * | 1993-09-28 | 1995-04-11 | Nichia Chem Ind Ltd | 発光ダイオード |
JPH07335790A (ja) * | 1994-06-06 | 1995-12-22 | Toray Dow Corning Silicone Co Ltd | 半導体素子保護用組成物および半導体装置 |
JP3261922B2 (ja) * | 1994-07-26 | 2002-03-04 | 株式会社村田製作所 | 圧電共振部品の製造方法 |
JPH0927642A (ja) * | 1995-07-13 | 1997-01-28 | Clarion Co Ltd | 照明装置 |
CN1534803B (zh) * | 1996-06-26 | 2010-05-26 | 奥斯兰姆奥普托半导体股份有限两合公司 | 具有发光变换元件的发光半导体器件 |
US5729029A (en) * | 1996-09-06 | 1998-03-17 | Hewlett-Packard Company | Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices |
JP2868085B2 (ja) * | 1997-05-20 | 1999-03-10 | 日亜化学工業株式会社 | 面状光源 |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
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DE29804149U1 (de) * | 1998-03-09 | 1998-06-18 | Chen, Hsing, Hsinchu | Leuchtdiode (LED) mit verbesserter Struktur |
US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
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- 1999-08-27 GB GB9920418A patent/GB2341274A/en not_active Withdrawn
- 1999-08-27 JP JP24190199A patent/JP4562828B2/ja not_active Expired - Lifetime
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JP2000031532A (ja) * | 1998-07-14 | 2000-01-28 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
Also Published As
Publication number | Publication date |
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GB2341274A (en) | 2000-03-08 |
JP2000077723A (ja) | 2000-03-14 |
DE19919381A1 (de) | 2000-03-09 |
DE19919381B4 (de) | 2006-05-04 |
GB9920418D0 (en) | 1999-11-03 |
JP2010161423A (ja) | 2010-07-22 |
US5959316A (en) | 1999-09-28 |
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