JP2000077723A5 - - Google Patents
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- JP2000077723A5 JP2000077723A5 JP1999241901A JP24190199A JP2000077723A5 JP 2000077723 A5 JP2000077723 A5 JP 2000077723A5 JP 1999241901 A JP1999241901 A JP 1999241901A JP 24190199 A JP24190199 A JP 24190199A JP 2000077723 A5 JP2000077723 A5 JP 2000077723A5
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- semiconductor device
- light
- light emitting
- resin
- emitting diode
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- 239000004065 semiconductor Substances 0.000 description 35
- 239000011347 resin Substances 0.000 description 23
- 229920005989 resin Polymers 0.000 description 23
- 239000010410 layer Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 9
- 239000002775 capsule Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective Effects 0.000 description 1
Description
【特許請求の範囲】
【請求項1】 半導体装置であって、
発光半導体(18、60)と、
前記発光半導体(18、60)のまわりに配置された透明スペーサ(50、64)と、
前記発光半導体(18、60)及び前記透明スペーサ(50、64)の上に配置された蛍光材料を含む層(52、66)と、
前記発光半導体(18、60)に接続されて、前記発光半導体に付勢し、発光させる入力端子(12、14、62)と
を有する半導体装置。
【請求項2】 前記透明スペーサ(50、64)が、前記発光半導体(18、60)の上に配置されることと、前記蛍光材料を含む層(52、66)が、前記透明スペーサ(50、64)によって、前記発光半導体(18、60)から間隔をあけて配置されることを特徴とする、請求項1に記載の半導体装置。
【請求項3】 前記蛍光材料を含む層(66、52)の上に配置された保護層(68、26)が含まれることを特徴とする、請求項1に記載の半導体装置。
【請求項4】 前記入力端子(12)の1つが、前記発光半導体(18)のリフレクタ(16)を形成することを特徴とする、請求項1に記載の半導体装置。
【請求項5】 前記発光半導体(18、60)が、前記蛍光材料を含む層(52、66)によって部分的に別の波長に変換され、所定の波長の光を放出することを特徴とする、請求項1に記載の半導体装置。
【請求項6】 前記発光半導体(18、60)が、青色光を放出することと、
前記蛍光材料を含む層(52、66)に、前記青色光の大部分に反応して、前記青色光の残りの部分と結合可能な光を発生し、それによって白色光が得られるようにする蛍光物質が含まれていることと
を特徴とする請求項1に記載の半導体装置。
【請求項7】 半導体装置であって、
発光ダイオードと、
前記発光ダイオードのまわりに配置された透明なカプセル封止樹脂と、
前記発光ダイオード及び前記透明なカプセル封止樹脂の上に配置された蛍光材料を含む樹脂と、
前記発光ダイオードに接続されて、前記発光ダイオードに付勢し、発光させる入力端子と
を有する半導体装置。
【請求項8】 前記透明なカプセル封止樹脂が、前記発光ダイオードの上に配置されることと、前記蛍光材料を含む前記樹脂が、前記透明なカプセル封止樹脂によって、前記発光ダイオードから間隔をあけて配置されることと、前記蛍光材料を含む前記樹脂が、ほぼ均一な厚さであることとを特徴とする、請求項7に記載の半導体装置。
【請求項9】 前記蛍光材料を含む前記樹脂の上に配置された保護樹脂層が含まれることを特徴とする、請求項7に記載の半導体装置。
【請求項10】 前記入力端子の1つが、前記発光ダイオード用のリフレクタ、及び、前記樹脂用のカップを形成することを特徴とする、請求項7に記載の半導体装置。
【請求項11】 前記発光ダイオードを配置し、前記樹脂を滴下した装置基板が含まれていることを特徴とする、請求項7に記載の半導体装置。
【請求項12】 前記発光ダイオードが、前記蛍光材料によって部分的に別の波長に変換されて、均一な白色光を生じることになる、所定の波長の光を放出することを特徴とする、請求項7に記載の半導体装置。
【請求項13】 前記発光ダイオードが、青色光を放出することと、
前記蛍光材料に、前記青色光に反応して、緑色光を生じる第1の蛍光物質と、前記青色光に反応して、赤色光を生じる第2の蛍光物質が含まれていることと、 前記蛍光材料が、それを通る前記青色光、及び、それから放出される前記赤色及び前記緑色光から白に見える光を生じることを特徴とする、
請求項7に記載の半導体装置。
【請求項14】 半導体装置であって、
サファイア基板と、
前記サファイア層の上に配置されて、発光ダイオードを形成する、インジウムをドープした窒化ガリウムのエピタキシャル層と、
前記サファイア基板のまわりに配置された透明なカプセル封止樹脂と、
前記エピタキシャル層の上に配置される樹脂及び前記透明なカプセル封止樹脂を含むYAG/Gd:Ce蛍光物質と、
前記エピタキシャル層に接続されて、前記エピタキシャル層に付勢し、光を放出させる入力端子が含まれている、
半導体装置。
【請求項15】 前記透明なカプセル封止樹脂が、前記エピタキシャル層の上に配置され、樹脂を含む前記蛍光物質が、前記透明なカプセル封止樹脂によって前記エピタキシャル層から間隔をあけて配置されることを特徴とする、請求項14に記載の半導体装置。
【請求項16】 前記蛍光物質を含む樹脂の上に配置された保護層が含まれることを特徴とする、請求項14に記載の半導体装置。
【請求項17】 前記入力端子の1つが、前記サファイア基板上において前記エピタキシャル層用のリフレクタを形成することを特徴とする、請求項14に記載の半導体装置。
【請求項18】 前記サファイア基板を配置した装置基板が含まれることを特徴とする、請求項14に記載の半導体装置。
【請求項19】 前記エピタキシャル層が、前記蛍光物質を含む樹脂によって部分的に別の波長に変換されて、均一な白に見える光を生じることになる、所定の波長の光を放出することを特徴とする、請求項14に記載の半導体装置。
【請求項20】 前記エピタキシャル層が、青色光を生じることと、
前記YAG/Gd:Ce蛍光物質を含む樹脂が、前記青色光の大部分に反応して、緑色及び赤色光を放出することと、
前記YAG/Gd:Ce蛍光物質を含む樹脂が、それから放出される前記緑色及び赤色光と、それを通る前記残りの青色光から白に見える光を生じることを特徴とする、
請求項14に記載の半導体装置。
【請求項1】 半導体装置であって、
発光半導体(18、60)と、
前記発光半導体(18、60)のまわりに配置された透明スペーサ(50、64)と、
前記発光半導体(18、60)及び前記透明スペーサ(50、64)の上に配置された蛍光材料を含む層(52、66)と、
前記発光半導体(18、60)に接続されて、前記発光半導体に付勢し、発光させる入力端子(12、14、62)と
を有する半導体装置。
【請求項2】 前記透明スペーサ(50、64)が、前記発光半導体(18、60)の上に配置されることと、前記蛍光材料を含む層(52、66)が、前記透明スペーサ(50、64)によって、前記発光半導体(18、60)から間隔をあけて配置されることを特徴とする、請求項1に記載の半導体装置。
【請求項3】 前記蛍光材料を含む層(66、52)の上に配置された保護層(68、26)が含まれることを特徴とする、請求項1に記載の半導体装置。
【請求項4】 前記入力端子(12)の1つが、前記発光半導体(18)のリフレクタ(16)を形成することを特徴とする、請求項1に記載の半導体装置。
【請求項5】 前記発光半導体(18、60)が、前記蛍光材料を含む層(52、66)によって部分的に別の波長に変換され、所定の波長の光を放出することを特徴とする、請求項1に記載の半導体装置。
【請求項6】 前記発光半導体(18、60)が、青色光を放出することと、
前記蛍光材料を含む層(52、66)に、前記青色光の大部分に反応して、前記青色光の残りの部分と結合可能な光を発生し、それによって白色光が得られるようにする蛍光物質が含まれていることと
を特徴とする請求項1に記載の半導体装置。
【請求項7】 半導体装置であって、
発光ダイオードと、
前記発光ダイオードのまわりに配置された透明なカプセル封止樹脂と、
前記発光ダイオード及び前記透明なカプセル封止樹脂の上に配置された蛍光材料を含む樹脂と、
前記発光ダイオードに接続されて、前記発光ダイオードに付勢し、発光させる入力端子と
を有する半導体装置。
【請求項8】 前記透明なカプセル封止樹脂が、前記発光ダイオードの上に配置されることと、前記蛍光材料を含む前記樹脂が、前記透明なカプセル封止樹脂によって、前記発光ダイオードから間隔をあけて配置されることと、前記蛍光材料を含む前記樹脂が、ほぼ均一な厚さであることとを特徴とする、請求項7に記載の半導体装置。
【請求項9】 前記蛍光材料を含む前記樹脂の上に配置された保護樹脂層が含まれることを特徴とする、請求項7に記載の半導体装置。
【請求項10】 前記入力端子の1つが、前記発光ダイオード用のリフレクタ、及び、前記樹脂用のカップを形成することを特徴とする、請求項7に記載の半導体装置。
【請求項11】 前記発光ダイオードを配置し、前記樹脂を滴下した装置基板が含まれていることを特徴とする、請求項7に記載の半導体装置。
【請求項12】 前記発光ダイオードが、前記蛍光材料によって部分的に別の波長に変換されて、均一な白色光を生じることになる、所定の波長の光を放出することを特徴とする、請求項7に記載の半導体装置。
【請求項13】 前記発光ダイオードが、青色光を放出することと、
前記蛍光材料に、前記青色光に反応して、緑色光を生じる第1の蛍光物質と、前記青色光に反応して、赤色光を生じる第2の蛍光物質が含まれていることと、 前記蛍光材料が、それを通る前記青色光、及び、それから放出される前記赤色及び前記緑色光から白に見える光を生じることを特徴とする、
請求項7に記載の半導体装置。
【請求項14】 半導体装置であって、
サファイア基板と、
前記サファイア層の上に配置されて、発光ダイオードを形成する、インジウムをドープした窒化ガリウムのエピタキシャル層と、
前記サファイア基板のまわりに配置された透明なカプセル封止樹脂と、
前記エピタキシャル層の上に配置される樹脂及び前記透明なカプセル封止樹脂を含むYAG/Gd:Ce蛍光物質と、
前記エピタキシャル層に接続されて、前記エピタキシャル層に付勢し、光を放出させる入力端子が含まれている、
半導体装置。
【請求項15】 前記透明なカプセル封止樹脂が、前記エピタキシャル層の上に配置され、樹脂を含む前記蛍光物質が、前記透明なカプセル封止樹脂によって前記エピタキシャル層から間隔をあけて配置されることを特徴とする、請求項14に記載の半導体装置。
【請求項16】 前記蛍光物質を含む樹脂の上に配置された保護層が含まれることを特徴とする、請求項14に記載の半導体装置。
【請求項17】 前記入力端子の1つが、前記サファイア基板上において前記エピタキシャル層用のリフレクタを形成することを特徴とする、請求項14に記載の半導体装置。
【請求項18】 前記サファイア基板を配置した装置基板が含まれることを特徴とする、請求項14に記載の半導体装置。
【請求項19】 前記エピタキシャル層が、前記蛍光物質を含む樹脂によって部分的に別の波長に変換されて、均一な白に見える光を生じることになる、所定の波長の光を放出することを特徴とする、請求項14に記載の半導体装置。
【請求項20】 前記エピタキシャル層が、青色光を生じることと、
前記YAG/Gd:Ce蛍光物質を含む樹脂が、前記青色光の大部分に反応して、緑色及び赤色光を放出することと、
前記YAG/Gd:Ce蛍光物質を含む樹脂が、それから放出される前記緑色及び赤色光と、それを通る前記残りの青色光から白に見える光を生じることを特徴とする、
請求項14に記載の半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/144,744 US5959316A (en) | 1998-09-01 | 1998-09-01 | Multiple encapsulation of phosphor-LED devices |
US144,744 | 1998-09-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010099573A Division JP2010161423A (ja) | 1998-09-01 | 2010-04-23 | 発光半導体を備えた半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000077723A JP2000077723A (ja) | 2000-03-14 |
JP2000077723A5 true JP2000077723A5 (ja) | 2006-10-12 |
JP4562828B2 JP4562828B2 (ja) | 2010-10-13 |
Family
ID=22509938
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24190199A Expired - Lifetime JP4562828B2 (ja) | 1998-09-01 | 1999-08-27 | 発光半導体を備えた半導体装置 |
JP2010099573A Pending JP2010161423A (ja) | 1998-09-01 | 2010-04-23 | 発光半導体を備えた半導体装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010099573A Pending JP2010161423A (ja) | 1998-09-01 | 2010-04-23 | 発光半導体を備えた半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5959316A (ja) |
JP (2) | JP4562828B2 (ja) |
DE (1) | DE19919381B4 (ja) |
GB (1) | GB2341274A (ja) |
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