TWI590495B - 藉由透明分隔物與發光二極體隔開之磷光體 - Google Patents
藉由透明分隔物與發光二極體隔開之磷光體 Download PDFInfo
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Description
本發明係關於經磷光體轉換之發光二極體(LED),且特定言之,本發明係關於用於改良此等LED之光提取效率之一技術。
在一藍色LED晶粒上設置一磷光體層(諸如一黃色YAG磷光體)係較常見的。通常,一磷光體直接設置於一藍色LED晶粒上以產生白光。透過該磷光體洩漏之藍光與磷光體光一起產生白光。存在將該磷光體層沈積於該LED晶粒上之諸多方式。
激發磷光體之藍光引起磷光體沿全部方向發射光子。對於一相對較薄磷光體層,可假定:50%之磷光體光向上遠離LED晶粒發射;及50%之磷光體光朝向LED晶粒發射且照射於LED晶粒表面上。對於基於氮化鎵(GaN)之LED晶粒,照射於LED晶粒表面上之約15%之磷光體光被LED材料吸收,且約85%被回射向磷光體層。因此,由於約一半之磷光體光照射於LED表面上且該光之15%被吸收,所以由磷光體層發射之全部光之約7.5%因被LED材料吸收而被浪費。此係系統之最大損耗機制。
需要一項技術來減少由LED晶粒對磷光體光之吸收引起之損耗。
一基於GaN之LED生長於一透明藍寶石、SiC或其他生長基板
上。此等基板通常為約75微米厚,其中該厚度經選擇以在處理期間給LED晶圓提供最低所需機械支撐。在一實施例中,在LED經單粒化之後,將諸多LED晶粒安裝於一單一基台(submount)晶圓或一引線框總成上,使得全部LED晶粒可輕易被處置及處理。對於覆晶LED晶粒,在將LED晶粒安裝於基台晶圓上之後,生長基板面向上且被曝露。接著,可藉由雷射剝離而移除生長基板。
接著,藉由一薄的聚矽氧黏著劑(例如小於50微米)而將一透明玻璃板貼附於各LED上。該玻璃板較佳地大於100微米厚,且在一實施例中,該玻璃板為250微米至400微米厚。玻璃具有約1.5之一折射率。
接著,(諸如)藉由噴射、或藉由將一預成型磷光體薄片層壓於玻璃板及基台晶圓表面上、或藉由其他適合技術而將一磷光體層沈積於玻璃板之頂面及側壁上。在一實施例中,將磷光體注入至聚矽氧黏合劑中。因為聚矽氧具有約1.5之一折射率,所以磷光體層有效地具有約1.5之一折射率。磷光體層之厚度將通常為30微米至75微米。
由於磷光體層及玻璃板具有近似相同之折射率,所以朝向玻璃板表面發射之任何磷光體光將進入玻璃板,且若未照射於LED頂面上,則將直接穿過玻璃板且很少有或無內反射。歸因於晶粒之吸收,進入玻璃板且自LED晶粒反射之任何磷光體光將具有一15%衰減。
由於玻璃板比LED晶粒厚(半導體層可為僅數微米),所以進入玻璃板之諸多磷光體光將自玻璃板之側壁射出且不接觸LED晶粒。因此,LED材料之吸收將遠小於磷光體直接沈積於LED晶粒上時之吸收。發明者已模擬所得LED結構,且相比於其中磷光體層直接沈積於LED晶粒表面上之一裝置而獲得光提取之一16%增益。
所得LED結構具有比其中磷光體層直接沈積於LED晶粒上之一習知LED結構多很多之側向發射。若不期望側向發射,則可將LED結構
安裝於一反射杯中。若期望總側向發射,則可將一反射金屬層沈積於磷光體層上。視情況而定,玻璃板可形成有一凹坑以引起等形之磷光體層及金屬反射體導引光遠離LED晶粒。由於更少光將照射於LED晶粒上,所以此將進一步改良光提取效率。此一側射LED適合於一背光,其中支撐LED模組之印刷電路板平行於光導,且側向發射耦合至光導之邊緣中。
玻璃板及磷光體層之折射率經較佳地匹配以減少反射。然而,若折射率不匹配,則將存在磷光體光自玻璃板外表面之一些反射以仍藉由減少LED晶粒之吸收而提高光提取效率。
在另一實施例中,不移除透明生長基板且將磷光體沈積於生長基板上。對於此一實施例,可期望使用比習知75微米基板厚很多之一生長基板。在一實施例中,該生長基板之厚度介於100微米至400微米之間。進入該厚基板之任何磷光體光將最可自基板側壁射出且不接觸LED晶粒表面。
可將玻璃板及基板製成厚於400微米,但應權衡效能與材料成本。不使用一玻璃板,而是可將藍寶石板貼附至LED晶粒。
在一實施例中,因為基台或引線框具有(諸如)由一銀層形成之一反射頂面,所以任何磷光體光或LED光將自基台或引線框反射且不會被吸收。
將(諸如)由聚矽氧形成之一半球形透鏡模製於全部LED上。接著,將基台晶圓單粒化或將引線框隔開。
本發明亦揭示其他實施例。
12‧‧‧發光二極體(LED)晶粒
14‧‧‧基台晶圓
16‧‧‧n型層
18‧‧‧作用層
20‧‧‧p型層
22‧‧‧金屬電極
24‧‧‧金屬電極
26‧‧‧金屬墊
28‧‧‧金屬墊
30‧‧‧導電通孔
40‧‧‧底部金屬墊
42‧‧‧典型線
44‧‧‧玻璃板
46‧‧‧聚矽氧
48‧‧‧磷光體層
50‧‧‧透鏡
52‧‧‧反射層
54‧‧‧光
56‧‧‧金屬薄膜
60‧‧‧基板
圖1係與其他LED晶粒一起安裝於一基台晶圓上之一先前技術藍色或UV覆晶LED晶粒之一橫截面簡化圖。
圖2係來自圖1之一更進一步簡化LED晶粒及基台晶圓之一橫截面
圖,該基台晶圓具有貼附至該LED晶粒之頂面之一玻璃板及沈積於該玻璃板之頂面及側壁上之一磷光體層。
圖3繪示圖2之結構,其展示來自磷光體層之各種光線如何穿過玻璃板及如何透過玻璃板之側壁射出以避免照射於LED晶粒表面上。
圖4繪示類似於圖2之一結構,但其中玻璃板具有位於磷光體層上之一凹坑及一金屬反射體以引起全部側向發射。
圖5係一簡化LED晶粒及基台晶圓之一橫截面圖,其中LED晶粒之透明生長基板仍原封不動且一磷光體層沈積於該基板上。
圖6繪示圖5之結構,其展示來自磷光體層之各種光線如何穿過透明生長基板及如何透過基板之側壁射出以避免照射於LED晶粒表面上。
相同或相似元件用相同元件符號標記。
本發明可應用於諸多類型之不同LED,且將描述一LED結構之一實例以繪示本發明之應用。
先前技術之圖1繪示安裝於一基台晶圓14之一部分上之一習知覆晶LED晶粒12。在一覆晶中,n型接點及p型接點兩者形成於LED晶粒之相同側上。LED晶粒可為任何其他類型之晶粒,其包含在其頂面上具有一或兩個電極之一晶粒。
在本發明中,術語「基台晶圓」意欲意指一陣列之LED晶粒之一支撐,其中晶圓上之金屬墊接合至LED晶粒上之電極,隨後,晶圓經單粒化以在一單一基台上形成一或多個LED晶粒。
LED晶粒12可安裝於一反射引線框總成上,而非安裝於一基台晶圓上,其中多個引線框由隨後被鋸斷以將LED/引線框單粒化之金屬突耳互連。引線框可為塗佈有銀之銅。各引線框將具有用於連接至LED晶粒之至少兩個金屬墊及用於連接至一印刷電路板之至少兩個端
子。
LED晶粒12由半導體磊晶層形成,其包含生長於一生長基板(諸如一藍寶石基板)上之一n型層16、一作用層18及一p型層20。在圖1中,已藉由雷射剝離、蝕刻、研磨或藉由其他技術而移除該生長基板。在一實例中,該等磊晶層係GaN基,且作用層18發射藍光。發射UV光之LED晶粒亦可應用於本發明。
一金屬電極22電接觸p型層20,及一金屬電極24電接觸n型層16。在一實例中,電極22及24包括金且超音波地焊接至一陶瓷基台晶圓14上之金屬墊26及28。基台晶圓14具有通至底部金屬墊40(其用於接合至一印刷電路板)之導電通孔30。諸多LED晶粒12安裝於基台晶圓14上且隨後將沿典型線42單粒化以形成個別LED/基台。
可在受讓人之美國專利第6,649,440號及第6,274,399號及美國專利公開案US 2006/0281203 A1及2005/0269582 A1中找到LED之進一步細節,該等案之全文以引用的方式併入本文中。
圖2係經由金屬墊26、28(圖1中所展示)而安裝於基台晶圓14上之圖1中之一簡化LED晶粒12之一橫截面圖。基台晶圓14之表面具有包圍LED晶粒12之一銀反射層52,或金屬墊26、28具反射性且延伸超出LED晶粒12。
LED晶粒12(不含生長基板)僅為數微米厚。一透明玻璃板44經由一層非常薄之聚矽氧46而貼附至LED晶粒12之頂面。聚矽氧46如實際般薄且通常為約50微米厚。可藉由噴射或透過一遮罩印刷而沈積聚矽氧46。玻璃板44應相對較厚(諸如100微米至400微米),且較佳地大於250微米厚。玻璃板44可藉由諸多技術(其包含一熟知液體玻璃技術)而製造,且使用自動取置機器來予以定位。
在一實施例中,聚矽氧46具有注入至其內以提供藍色LED光之某一初始波長轉換之一磷光體。聚矽氧46中之該磷光體可為一YAG磷光
體、一綠色磷光體、一紅色磷光體或任何其他磷光體。
接著,一磷光體層48沈積於玻璃板44之頂面及側壁上。磷光體層48可為由磷光體粉末與聚矽氧之一混合物形成之一預成型磷光體薄片,其經測試,接著層壓於LED晶粒12及基台晶圓14上。該磷光體可為一YAG磷光體。在將該薄片壓製於玻璃板44及基台晶圓14之表面上以使該薄片與表面等形之後,接著加熱該薄片以將磷光體層48貼附於玻璃板44及LED晶粒12之側上。磷光體層48可代以被噴射上、被網版印刷上、藉由電泳而沈積或藉由其他方法而沈積。在一實施例中,磷光體層為30微米至75微米厚,其取決於所要色彩、LED強度、磷光體密度及其他考量。磷光體層48可包括磷光體之一組合或可為複數個磷光體層以達成所要色彩。在一實施例中,LED結構之總輸出為具有任何色溫之白光。
玻璃板之折射率(例如n=1.5)與磷光體層之折射率(例如n=1.5)經較佳地匹配以減少介面處之反射。然而,若折射率不匹配,則將存在磷光體光自玻璃板44之外表面之一些反射以仍藉由減少LED晶粒12之吸收而提高光提取效率。
基台晶圓14或引線框總成上之全部LED晶粒12被最大限度地一起處理以簡化處置、改良均勻性、加速處理及降低成本。
接著,將半球形透鏡50同時模製於全部LED晶粒12上以增加光提取且囊封LED晶粒12以使其受保護。透鏡50可為聚矽氧。
如圖3中所展示,由於LED結構之側壁遠厚於一習知塗佈有磷光體之LED之側壁,所以圖2之結構引起更多光54自LED結構之側射出。為簡單起見,圖3中不考量由磷光體層48所致之光折射及光散射。若玻璃板44之頂面上之磷光體層48以一足夠角度發射光,則全部該等光將自玻璃板44之側壁射出,而非照射於LED晶粒12上且被部分吸收。由玻璃板44之側壁上之磷光體層48發射之絕大多數光不會照射
於LED晶粒12上。照射於基台表面上之光會被反射層52反射向上。一較厚玻璃板會減少照射於LED晶粒12上之磷光體光之數量以因此更多地減少吸收。
若期望LED結構為一100%側射LED結構,則可將一金屬反射層(例如鋁或銀)沈積於磷光體層48之頂面上以防止光透過LED結構之頂部而射出且引起全部發射光成為側光。
圖4繪示一側射LED結構,其中玻璃板44形成有一凹坑,該凹坑可為具有一尖點或一曲線點之圓錐形。磷光體層48及一經沈積金屬薄膜56與該凹坑形狀等形。金屬薄膜56反射全部光朝向玻璃板44之側以形成一側射LED結構。此一側射LED適合於薄背光,其中支撐LED結構之印刷電路板平行於一光導,且側光耦合至光導之邊緣中。
在一實施例中,一藍寶石板或其他透明材料可用於板44。
在對類似於圖2之一LED結構所進行之模擬中,相比於其中磷光體層直接沈積於LED晶粒12之表面上之一裝置而獲得光提取之一16%增益。
圖5係基台晶圓14上之另一簡化LED晶粒12之一橫截面圖,其中該LED晶粒之透明生長基板60仍原封不動且磷光體層48位於基板60上。基板60係透明的且可為藍寶石、GaN、SiC或其他適合基板。在一實施例中,基板60之厚度介於100微米至400微米之間且較佳地大於250微米以顯著改良光提取效率。由於相對於圖2所給出之相同原因,增加之厚度導致更多側光。由於藍寶石具有約1.77之一折射率,所以在磷光體層48中用作為一黏合劑之聚矽氧可經選擇以具有約1.77之一折射率以最小化磷光體光自藍寶石之反射且最小化全內反射。
圖6繪示圖5之結構,其展示磷光體光54如何穿過基板60及如何自基板之側壁射出,而非照射於吸收LED晶粒12上。因此,相較於先前技術結構而顯著提高光提取效率。
接著,在將半球形透鏡50模製至裝置上之後,將基台晶圓14單粒化以形成複數個封裝LED結構。圖2至圖6可表示單粒化之後之LED結構,其中基台之底部上之金屬墊用於接合至一印刷電路板之墊。若將一磷光體薄片層壓至基台晶圓14,則該磷光體薄片延伸至封裝LED結構之邊緣,類似於圖2至圖5中所展示之情況。在替代例中,模製透鏡、形成磷光體或附接玻璃可發生在單粒化之後。
在全部實施例中,基台晶圓14可由一反射引線框總成取代。在LED晶粒12由透鏡50囊封之後,不再需要另外封裝。
本發明亦預見LED晶粒12之其他基座。
在一實施例中,LED晶粒12之寬度及長度為每側約1毫米,且整個封裝LED結構為每側小於3毫米。
儘管玻璃板44及基板60被稱為「透明的」,但無法實現完美透明度且術語「透明的」意指材料之一典型透明度,其對由LED晶粒12發射或由磷光體層48發射之光之波長實質上係透明的。
儘管已展示及描述本發明之特定實施例,但熟悉此項技術者將明白,可在不脫離本發明之情況下在本發明之更廣態樣中作出改變及修改,因此,隨附申請專利範圍將使其範疇涵蓋落於本發明之真實精神及範疇內之全部此等改變及修改。
12‧‧‧發光二極體(LED)晶粒
14‧‧‧基台晶圓
44‧‧‧玻璃板
46‧‧‧聚矽氧
48‧‧‧磷光體層
50‧‧‧透鏡
52‧‧‧反射層
54‧‧‧光
Claims (11)
- 一種經磷光體(phosphor)轉換之發光二極體(LED)結構,其包括:一LED晶粒,其具有多個半導體層,其中一生長基板已自該等半導體層移除;一實質上透明層,其貼附(affixed)於該LED晶粒之一頂面,該實質上透明層具有大於250微米之一厚度,該實質上透明層具有一頂面及側壁,其中該實質上透明層具有與該LED晶粒大致上相同之尺寸且未囊封該LED晶粒之側邊;一磷光體層,其位於該實質上透明層之該頂面及該等側壁上方且位於該等半導體層之側表面上方;及一透鏡,其形成於該磷光體層上方。
- 如請求項1之結構,其中該實質上透明層經由一黏著層而貼附至該LED晶粒。
- 如請求項2之結構,其中該黏著層為包括聚矽氧之一層。
- 如請求項1之結構,其中該實質上透明層包括貼附於該LED晶粒上之一玻璃層。
- 如請求項1之結構,其中該實質上透明層包括位於該LED晶粒上之一藍寶石層。
- 如請求項1之結構,其進一步包括一基台,該LED晶粒安裝於該基台上,其中該基台之一頂面部分具反射性以反射由該LED晶粒及該磷光體層向下發射之光。
- 如請求項1之結構,其進一步包括一反射引線框總成,該LED晶粒安裝於該反射引線框總成上。
- 如請求項1之結構,其中該LED晶粒發射藍光,且該磷光體光與 該藍光一起產生白光。
- 如請求項1之結構,其中該實質上透明層及該磷光體層具有近似相同之折射率。
- 如請求項1之結構,其中該LED晶粒係一覆晶。
- 如如請求項1之結構,其中該實質上透明層之厚度大於300微米。
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