JP4562828B2 - Semiconductor device provided with light emitting semiconductor - Google Patents

Semiconductor device provided with light emitting semiconductor Download PDF

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Publication number
JP4562828B2
JP4562828B2 JP24190199A JP24190199A JP4562828B2 JP 4562828 B2 JP4562828 B2 JP 4562828B2 JP 24190199 A JP24190199 A JP 24190199A JP 24190199 A JP24190199 A JP 24190199A JP 4562828 B2 JP4562828 B2 JP 4562828B2
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light
semiconductor device
fluorescent material
resin
light emitting
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JP2000077723A (en
JP2000077723A5 (en
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クリストファー・ハイドン・ロウリー
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フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

【０００１】
【発明の属する技術分野】
本発明は、一般に、発光ダイオードに関するものであり、とりわけ、蛍光材料(fluorescent material)を利用する発光ダイオードに関するものである。
【０００２】
【従来の技術】
現在、青色の発光ダイオードすなわちＬＥＤは、白色光を放出するＬＥＤデバイスを得るため、蛍光材料と組み合わせて用いられている。白色光は、一般に、波長が４００〜６００ナノメートル（ｎｍ）の範囲にわたって均一であるが、赤色、青色、及び、緑色の組み合わせとして生じる光は、やはり白色に見える。ＬＥＤにインジウム・ガリウム窒化物を用いることによって、強い青色光を生じることが可能である。一般に、より強度の低い赤色及び緑色光、及び、より強度の高い青色光を発生する蛍光物質(phosphor)を用いることによって、白色に見える強い光を発生することが可能である。基本的に、４７０ｎｍの青色光の大部分は、蛍光材料中の蛍光物質にぶつかって、アップシフトされ(up-shifted)、二次緑色及び赤色光が、蛍光物質を通って脱出する残りの青色光を補うことになる。これによって、人間の目に白色に見える光の最終的組み合わせが得られる。
【０００３】
あいにく、青色ＬＥＤ上に層をなす蛍光材料を利用する従来のアプローチでは、明るい白色の中心部が、黄色の環状リング、それに続く青色の環状リング、それに続く黄色の最終環状リングで包囲された、ＬＥＤが得られることが分かっている。これらの環状リングは、必ずしも、ＬＥＤ毎に予測可能に生じるとは限らないので、比較的均一な白色光を生じるＬＥＤもあれば、環状リングに変動を生じるＬＥＤもある。
【０００４】
これらのリングの原因を確認するのは困難であり、従って、この問題を解決する方法を決定するのは困難であった。顧客は、白色からの偏差（逸脱）をＬＥＤの欠陥とみなすので、品質管理において、多数のＬＥＤを廃棄しなければならない。
【０００５】
以上の問題は、ＬＥＤランプ並びに表面実装(surface-mount)ＬＥＤ灯の両方に生じる。
【０００６】
【発明が解決しようとする課題】
本発明の目的は、上述の問題点を解決し、一定して均一な白色光ＬＥＤが得られるようにすることにある。
【０００７】
【課題を解決するための手段】
本半導体灯は、透明スペーサによって被われた発光ダイオードを備えている。蛍光材料がより均一に照明されて、一定して均一な白色光ＬＥＤが得られるように、透明スペーサによって、ＬＥＤが蛍光材料から分離されている。これによって、黄色及び／または青色光を放出する、白色半導体灯に関する前者の問題が解消される。
【０００８】
本発明の利点については、当該技術者には、添付の図面と関連づけて考察すれば、以下の詳細な説明を読むことによって明らかになるであろう。
【０００９】
【発明の実施の形態】
次に、図１（先行技術）を参照すると、発光ダイオード（ＬＥＤ）・ランプが示されている。ＬＥＤランプ１０は、ＬＥＤランプ１０に電力を供給する第１と第２の端子、または、リード・フレーム１２及び１４を備えている。リード・フレーム１２は、ＬＥＤ１８が配置された凹型反射領域１６を備えている。ＬＥＤは、透明なサファイア基板上のインジウムをドープした(indium-doped)窒化ガリウムのエピタキシャル層から造られている。適正な順電圧での直流電流によって作動させると、インジウムをドープした窒化ガリウムのＬＥＤの上部表面には、波長が約４７０ｎｍの青色光が生じる。
【００１０】
ＬＥＤ１８は、ワイヤ・ボンド２０によってリード・フレーム１２に接続され、ワイヤ・ボンド２２によってリード・フレーム１４に接続されている。ＬＥＤ１８上には蛍光材料２４の層が配置されている。蛍光材料２４は、一般に、ＹＡＧ／Ｇｄ：Ｃｅ蛍光物質の粒子を含む透明なエポキシ樹脂である。アセンブリ全体が、透明なカプセル封止(encapsulation)エポキシ樹脂２６に埋め込まれている。
【００１１】
図１（先行技術）には、環状青色リングの光線を表した矢印２８及び３０も示されている。矢印３２及び３４は、外側環状リングの光線を表し、矢印３６及び３８は、内側黄色環状リングを表している。
【００１２】
次に図２（先行技術）を参照すると、ＬＥＤ１８を保持するカップを形成する反射部分１６を備えた、リード・フレーム１２が示されている。薄い領域４０及び４２とより厚い領域４４を備えた蛍光材料２４の層が、さらに拡大して示されている。簡略化のため、最終的なカプセル封止エポキシ樹脂２６は示されていない。
【００１３】
次に図３を参照すると、ＬＥＤ１８を保持するリフレクタ１６を備えたリード・フレーム１２が示されている。先行技術と同様の部品は、同じ番号で示されている。ＬＥＤ１８をカプセル封止する透明なスペーサ５０が示されており、透明スペーサ５０よりある高さだけ上方に配置された蛍光材料５２が示されている。
最終的なカプセル封止エポキシ樹脂２６は、簡略化のため示されていない。
【００１４】
次に図４を参照すると、表面実装装置の装置基板６２に配置された表面実装ＬＥＤ灯６０が示されている。ＬＥＤ６０が、透明スペーサ６４にカプセル封止されており、透明スペーサ６４は、さらに、蛍光材料の層６６及び最終的な透明カプセル封止層６８によって被われている。
【００１５】
動作時、図１のＬＥＤランプ１０（先行技術）は、ＬＥＤのどの部分がｐ接合で、どの部分がｎ接合であるかに従って、リード・フレーム１２または１４に電力が給与される。電力が給与されると、ＬＥＤ１８の上部は、強い青色光を放出する。領域４４に、適正な厚さの蛍光材料が与えられると、約４７０ｎｍの青色光と、それぞれ、５００ｎｍと５５０ｎｍの緑色及び赤色蛍光が適正に組み合わせられて、白色光が生じることになる。
【００１６】
図２（先行技術）に示す領域４０及び４２において、蛍光材料の層が比較的薄い場合、蛍光物質からの光の影響が不十分であるため、青色光は、一般に、光線のライン２８及び３０に沿って青色環状リングを生じることになる。環状青色リングの内側及び外側には、光線３２及び３４と光線３６及び３８による黄色環状リングが生じるが、この場合、蛍光物質は光の一部に影響を及ぼすものの、均一な白色光を生じさせるには不十分である。
【００１７】
ＬＥＤ１８上の材料２４の表面張力によって、ＬＥＤ１８のコーナに近い領域４０及び４２の厚さから、ＬＥＤの中心の上方における領域４４の厚さに及ぶ、さまざまな厚さの領域が生じる。この結果、青色光の不均一な再放射及び前述の環状リングが生じる。これは、蛍光材料２４の層が、ＬＥＤ１８の上及びまわりに配置されている場合に固有のように思われる。
【００１８】
図３に示す本発明の場合、ＬＥＤ１８の上及びまわりに透明スペーサ５０を堆積させ、ＬＥＤ１８からほぼ均一な厚さの蛍光材料の層５２を分離することによって、環状リングが排除されることが確認された。また、蛍光材料の層５２がＬＥＤの上方で均一な厚さになるように、透明スペーサ５０とＬＥＤ１８の上部をちょうど同じ高さにすることも可能であり、これによって、やはりこの問題が解消されることが確認されている。しかし、この後者のアプローチは、円錐状反射領域１６によって形成されるカップにおける透明スペーサ５０のより慎重な体積配分が必要とされる。
【００１９】
図４に示す表面実装ＬＥＤ灯の場合、表面張力（ＬＥＤ１８のサイズでは、重力に比べて大きい）と粘性の組み合わせを利用して、半球形一杯分の透明な紫外線（ＵＶ）硬化樹脂をＬＥＤ１８の上に滴下させ、透明スペーサ６０を形成することが可能である。この樹脂は、全てのコーナを被覆し、その後、ＵＶ光を利用して硬化させられる。これに、やはり、粘性のＵＶ硬化樹脂である、蛍光材料の層６６が後続する。透明スペーサ６４の堆積によって、液滴としての半球が生じ、次に、蛍光材料の層６６が流れて、透明スペーサ６４の半球形状と同じ形状になり、最終カプセル封止６８及び硬化の前に、硬化する。蛍光材料の層６６は、厚さが均一になるので、環状リングの問題は生じない。
【００２０】
熱硬化性による粘性が通常の滴下では、小さいサイズにもかかわらず、ほとんどの樹脂、通常エポキシ、がＬＥＤ１８から流れ出てしまうので、ＵＶ硬化のような高速硬化を行うことが必要になる。その後で、最終カプセル封止層６８を堆積させることが可能になる。
【００２１】
特定の最良の態様に関連して、本発明の解説を行ってきたが、もちろん、当該技術者には、以上の説明に鑑みて、多くの代替、修正、及び、変更案が明らかになるであろう。従って、それは、付属の請求項の精神及び範囲内にあるこうした全ての代替、修正、及び、変更案を包含することを意図したものである。本明細書に記載され、添付の図面に示された全ての事項は、例証を意味するものであって、制限を意味するものではないと解釈すべきである。
【００２２】
以上、本発明の実施例について詳述したが、以下、本発明の各実施態様の例を示す。
【００２３】
（実施態様１）
半導体装置であって、
発光半導体（１８、６０）と、
前記発光半導体（１８、６０）のまわりに配置された透明スペーサ（５０、６４）と、
前記発光半導体（１８、６０）及び前記透明スペーサ（５０、６４）の上に配置された蛍光材料を含む層（５２、６６）と、
前記発光半導体（１８、６０）に接続されて、前記発光半導体に付勢し、発光させる入力端子（１２、１４、６２）と
を有する半導体装置。
【００２４】
（実施態様２）
前記透明スペーサ（５０、６４）が、前記発光半導体（１８、６０）の上に配置されることと、前記蛍光材料を含む層（５２、６６）が、前記透明スペーサ（５０、６４）によって、前記発光半導体（１８、６０）から間隔をあけて配置されることを特徴とする、実施態様１に記載の半導体装置。
【００２５】
（実施態様３）
前記蛍光材料を含む層（６６、５２）の上に配置された保護層（６８、２６）が含まれることを特徴とする、実施態様１に記載の半導体装置。
【００２６】
（実施態様４）
前記入力端子（１２）の１つが、前記発光半導体（１８）のリフレクタ（１６）を形成することを特徴とする、実施態様１に記載の半導体装置。
【００２７】
（実施態様５）
前記発光半導体（１８、６０）が、前記蛍光材料を含む層（５２、６６）によって部分的に別の波長に変換され、所定の波長の光を放出することを特徴とする、実施態様１に記載の半導体装置。
【００２８】
（実施態様６）
前記発光半導体（１８、６０）が、青色光を放出することと、
前記蛍光材料を含む層（５２、６６）に、前記青色光の大部分に反応して、前記青色光の残りの部分と結合可能な光を発生し、それによって白色光が得られるようにする蛍光物質が含まれていることと
を特徴とする実施態様１に記載の半導体装置。
【００２９】
（実施態様７）
半導体装置であって、
発光ダイオードと、
前記発光ダイオードのまわりに配置された透明なカプセル封止樹脂と、
前記発光ダイオード及び前記透明なカプセル封止樹脂の上に配置された蛍光材料を含む樹脂と、
前記発光ダイオードに接続されて、前記発光ダイオードに付勢し、発光させる入力端子と
を有する半導体装置。
【００３０】
（実施態様８）
前記透明なカプセル封止樹脂が、前記発光ダイオードの上に配置されることと、前記蛍光材料を含む前記樹脂が、前記透明なカプセル封止樹脂によって、前記発光ダイオードから間隔をあけて配置されることと、前記蛍光材料を含む前記樹脂が、ほぼ均一な厚さであることとを特徴とする、実施態様７に記載の半導体装置。
【００３１】
（実施態様９）
前記蛍光材料を含む前記樹脂の上に配置された保護樹脂層が含まれることを特徴とする、実施態様７に記載の半導体装置。
【００３２】
（実施態様１０）
前記入力端子の１つが、前記発光ダイオード用のリフレクタ、及び、前記樹脂用のカップを形成することを特徴とする、実施態様７に記載の半導体装置。
【００３３】
（実施態様１１）
前記発光ダイオードを配置し、前記樹脂を滴下した装置基板が含まれていることを特徴とする、実施態様７に記載の半導体装置。
【００３４】
（実施態様１２）
前記発光ダイオードが、前記蛍光材料によって部分的に別の波長に変換されて、均一な白色光を生じることになる、所定の波長の光を放出することを特徴とする、実施態様７に記載の半導体装置。
【００３５】
（実施態様１３）
前記発光ダイオードが、青色光を放出することと、
前記蛍光材料に、前記青色光に反応して、緑色光を生じる第１の蛍光物質と、前記青色光に反応して、赤色光を生じる第２の蛍光物質が含まれていることと、前記蛍光材料が、それを通る前記青色光、及び、それから放出される前記赤色及び前記緑色光から白に見える光を生じることを特徴とする、
実施態様７に記載の半導体装置。
【００３６】
（実施態様１４）
半導体装置であって、
サファイア基板と、
前記サファイア層の上に配置されて、発光ダイオードを形成する、インジウムをドープした窒化ガリウムのエピタキシャル層と、
前記サファイア基板のまわりに配置された透明なカプセル封止樹脂と、
前記エピタキシャル層の上に配置される樹脂及び前記透明なカプセル封止樹脂を含むＹＡＧ／Ｇｄ：Ｃｅ蛍光物質と、
前記エピタキシャル層に接続されて、前記エピタキシャル層に付勢し、光を放出させる入力端子が含まれている、
半導体装置。
【００３７】
（実施態様１５）
前記透明なカプセル封止樹脂が、前記エピタキシャル層の上に配置され、樹脂を含む前記蛍光物質が、前記透明なカプセル封止樹脂によって前記エピタキシャル層から間隔をあけて配置されることを特徴とする、実施態様１４に記載の半導体装置。
【００３８】
（実施態様１６）
前記蛍光物質を含む樹脂の上に配置された保護層が含まれることを特徴とする、実施態様１４に記載の半導体装置。
【００３９】
（実施態様１７）
前記入力端子の１つが、前記サファイア基板上において前記エピタキシャル層用のリフレクタを形成することを特徴とする、実施態様１４に記載の半導体装置。
【００４０】
（実施態様１８）
前記サファイア基板を配置した装置基板が含まれることを特徴とする、実施態様１４に記載の半導体装置。
【００４１】
（実施態様１９）
前記エピタキシャル層が、前記蛍光物質を含む樹脂によって部分的に別の波長に変換されて、均一な白に見える光を生じることになる、所定の波長の光を放出することを特徴とする、実施態様１４に記載の半導体装置。
【００４２】
（実施態様２０）
前記エピタキシャル層が、青色光を生じることと、
前記ＹＡＧ／Ｇｄ：Ｃｅ蛍光物質を含む樹脂が、前記青色光の大部分に反応して、緑色及び赤色光を放出することと、
前記ＹＡＧ／Ｇｄ：Ｃｅ蛍光物質を含む樹脂が、それから放出される前記緑色及び赤色光と、それを通る前記残りの青色光から白に見える光を生じることを特徴とする、
実施態様１４に記載の半導体装置。
【００４３】
【発明の効果】
以上のように、本発明を用いると、透明スペーサによって被われた発光ダイオードを備えているので、蛍光材料がより均一に照明され、一定して均一な白色光ＬＥＤが得られる。これによって、黄色及び／または青色光を放出する、白色半導体灯に関する問題が解消される。
【図面の簡単な説明】
【図１】従来のＬＥＤランプの断面図である。
【図２】先行技術によるＬＥＤ及びそのカプセル封止システムの拡大図である。
【図３】本発明のカプセル封止システムを備えたＬＥＤの拡大図である。
【図４】本発明のカプセル封止システムを利用した、表面実装装置におけるＬＥＤの拡大図である。
【符号の説明】
１０：ＬＥＤランプ
１２、１４：リード・フレーム
１６：凹型反射領域
１８：ＬＥＤ
２０、２２：ワイヤ・ボンド
２４：蛍光材料
２６：カプセル封止エポキシ樹脂
２８、３０：環状青色リングの光線
３２、３４：外側黄色環状リングの光線
３６、３８：内側黄色環状リングの光線
４０、４２：薄い領域
４４：厚い領域
５０：透明スペーサ
５２：蛍光材料
６０：ＬＥＤ
６２：表面実装装置の装置基板
６４：透明スペーサ
６６：蛍光材料の層
６８：カプセル封止層[0001]
BACKGROUND OF THE INVENTION
The present invention relates generally to light emitting diodes, and more particularly to light emitting diodes that utilize fluorescent materials.
[0002]
[Prior art]
Currently, blue light emitting diodes or LEDs are used in combination with fluorescent materials to obtain LED devices that emit white light. White light is generally uniform over a wavelength range of 400-600 nanometers (nm), but light that occurs as a combination of red, blue, and green still appears white. By using indium gallium nitride in the LED, it is possible to generate intense blue light. In general, it is possible to generate intense light that appears white by using phosphors that generate less intense red and green light and more intense blue light. Basically, most of the 470 nm blue light hits the fluorescent material in the fluorescent material and is up-shifted, and the secondary green and red light escapes the remaining blue light through the fluorescent material. It will make up for light. This provides the final combination of light that appears white to the human eye.
[0003]
Unfortunately, in a conventional approach that utilizes a fluorescent material layered on a blue LED, the bright white center is surrounded by a yellow annular ring, followed by a blue annular ring, followed by a yellow final annular ring. It has been found that LEDs can be obtained. These annular rings do not necessarily occur predictably for each LED, so some LEDs produce relatively uniform white light, and some LEDs cause fluctuations in the annular ring.
[0004]
It was difficult to determine the cause of these rings, and therefore it was difficult to determine how to solve this problem. Since the customer regards the deviation (deviation) from white as an LED defect, many LEDs must be discarded in quality control.
[0005]
The above problems occur in both LED lamps as well as surface-mount LED lamps.
[0006]
[Problems to be solved by the invention]
An object of the present invention is to solve the above-mentioned problems and to obtain a uniform and uniform white light LED.
[0007]
[Means for Solving the Problems]
The semiconductor lamp includes a light emitting diode covered by a transparent spacer. The LED is separated from the fluorescent material by a transparent spacer so that the fluorescent material is more uniformly illuminated and a constant and uniform white light LED is obtained. This eliminates the former problem with white semiconductor lamps that emit yellow and / or blue light.
[0008]
The advantages of the present invention will become apparent to those skilled in the art upon reading the following detailed description when considered in conjunction with the accompanying drawings.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Referring now to FIG. 1 (Prior Art), a light emitting diode (LED) lamp is shown. The LED lamp 10 includes first and second terminals or lead frames 12 and 14 for supplying power to the LED lamp 10. The lead frame 12 includes a concave reflective region 16 in which an LED 18 is disposed. The LED is made of an indium-doped gallium nitride epitaxial layer on a transparent sapphire substrate. When operated with a direct current at the proper forward voltage, blue light with a wavelength of about 470 nm is produced on the top surface of the indium-doped gallium nitride LED.
[0010]
The LED 18 is connected to the lead frame 12 by a wire bond 20 and is connected to the lead frame 14 by a wire bond 22. A layer of fluorescent material 24 is disposed on the LED 18. The fluorescent material 24 is generally a transparent epoxy resin containing particles of a YAG / Gd: Ce fluorescent material. The entire assembly is embedded in a transparent encapsulation epoxy 26.
[0011]
Also shown in FIG. 1 (prior art) are arrows 28 and 30 representing the rays of the annular blue ring. Arrows 32 and 34 represent the rays of the outer annular ring, and arrows 36 and 38 represent the inner yellow annular ring.
[0012]
Referring now to FIG. 2 (prior art), the lead frame 12 is shown with a reflective portion 16 that forms a cup that holds the LED 18. The layer of fluorescent material 24 with thin regions 40 and 42 and thicker region 44 is shown further enlarged. For simplicity, the final encapsulated epoxy resin 26 is not shown.
[0013]
Referring now to FIG. 3, the lead frame 12 with the reflector 16 holding the LED 18 is shown. Parts similar to the prior art are indicated with the same numbers. A transparent spacer 50 that encapsulates the LED 18 is shown, and a fluorescent material 52 disposed above the transparent spacer 50 by a certain height is shown.
The final encapsulated epoxy resin 26 is not shown for simplicity.
[0014]
Referring now to FIG. 4, there is shown a surface mount LED lamp 60 disposed on the device substrate 62 of the surface mount device. The LED 60 is encapsulated in a transparent spacer 64, which is further covered by a fluorescent material layer 66 and a final transparent encapsulation layer 68.
[0015]
In operation, the LED lamp 10 of FIG. 1 (prior art) powers the lead frame 12 or 14 depending on which part of the LED is a p-junction and which part is an n-junction. When power is supplied, the top of the LED 18 emits intense blue light. If the region 44 is provided with an appropriate thickness of fluorescent material, then about 470 nm blue light and 500 nm and 550 nm green and red fluorescence, respectively, are properly combined to produce white light.
[0016]
In regions 40 and 42 shown in FIG. 2 (Prior Art), blue light is generally not applied to light lines 28 and 30 because the effect of light from the phosphor is insufficient if the layer of fluorescent material is relatively thin. Will produce a blue annular ring along the line. On the inside and outside of the annular blue ring, there is a yellow annular ring with rays 32 and 34 and rays 36 and 38. In this case, the fluorescent substance affects a part of the light, but produces a uniform white light. Is not enough.
[0017]
The surface tension of the material 24 on the LED 18 results in regions of varying thickness, ranging from the thickness of the regions 40 and 42 near the corners of the LED 18 to the thickness of the region 44 above the center of the LED. This results in non-uniform re-radiation of blue light and the aforementioned annular ring. This appears to be unique when a layer of fluorescent material 24 is placed on and around the LED 18.
[0018]
In the case of the present invention shown in FIG. 3, it is confirmed that the annular ring is eliminated by depositing a transparent spacer 50 on and around the LED 18 and separating the layer 52 of fluorescent material of substantially uniform thickness from the LED 18. It was done. It is also possible to make the top of the transparent spacer 50 and the LED 18 exactly the same so that the fluorescent material layer 52 has a uniform thickness above the LED, which again eliminates this problem. It has been confirmed that However, this latter approach requires a more careful volume distribution of the transparent spacer 50 in the cup formed by the conical reflective region 16.
[0019]
In the case of the surface-mounted LED lamp shown in FIG. 4, a combination of surface tension (in the size of the LED 18 is larger than gravity) and viscosity, a transparent hemispherical amount of transparent ultraviolet (UV) cured resin It is possible to form the transparent spacer 60 by dropping it on the top. This resin covers all corners and is then cured using UV light. This is followed by a layer 66 of fluorescent material, again a viscous UV curable resin. The deposition of the transparent spacer 64 results in a hemisphere as a droplet, and then the fluorescent material layer 66 flows to the same shape as the hemispherical shape of the transparent spacer 64, before final encapsulation 68 and curing. Harden. Since the layer 66 of fluorescent material is uniform in thickness, the problem of an annular ring does not occur.
[0020]
When the viscosity due to thermosetting is normal, most of the resin, usually epoxy, flows out of the LED 18 in spite of the small size, so it is necessary to perform high-speed curing such as UV curing. Thereafter, the final encapsulation layer 68 can be deposited.
[0021]
Although the present invention has been described with reference to specific best embodiments, it will be apparent to those skilled in the art that many alternatives, modifications, and alternatives will become apparent in view of the foregoing description. I will. Accordingly, it is intended to embrace all such alternatives, modifications and variations that fall within the spirit and scope of the appended claims. All matters set forth herein and shown in the accompanying drawings are to be regarded as illustrative and not restrictive.
[0022]
As mentioned above, although the Example of this invention was explained in full detail, the example of each embodiment of this invention is shown below.
[0023]
(Embodiment 1)
A semiconductor device,
A light emitting semiconductor (18, 60);
Transparent spacers (50, 64) disposed around the light emitting semiconductor (18, 60);
A layer (52, 66) comprising a fluorescent material disposed on the light emitting semiconductor (18, 60) and the transparent spacer (50, 64);
A semiconductor device having an input terminal (12, 14, 62) connected to the light emitting semiconductor (18, 60) and energizing the light emitting semiconductor to emit light.
[0024]
(Embodiment 2)
The transparent spacer (50, 64) is disposed on the light emitting semiconductor (18, 60), and the layer (52, 66) containing the fluorescent material is formed by the transparent spacer (50, 64). 2. The semiconductor device according to embodiment 1, wherein the semiconductor device is arranged at a distance from the light emitting semiconductor (18, 60).
[0025]
(Embodiment 3)
The semiconductor device according to embodiment 1, wherein a protective layer (68, 26) disposed on the layer (66, 52) containing the fluorescent material is included.
[0026]
(Embodiment 4)
2. The semiconductor device according to embodiment 1, wherein one of the input terminals (12) forms a reflector (16) of the light emitting semiconductor (18).
[0027]
(Embodiment 5)
Embodiment 1 characterized in that the light emitting semiconductor (18, 60) is partially converted to another wavelength by the layer (52, 66) containing the fluorescent material and emits light of a predetermined wavelength. The semiconductor device described.
[0028]
(Embodiment 6)
The light emitting semiconductor (18, 60) emits blue light;
The layer containing the fluorescent material (52, 66) reacts with most of the blue light to generate light that can be combined with the rest of the blue light, thereby obtaining white light. The semiconductor device according to Embodiment 1, wherein a fluorescent material is contained.
[0029]
(Embodiment 7)
A semiconductor device,
A light emitting diode;
A transparent encapsulating resin disposed around the light emitting diode;
A resin comprising a fluorescent material disposed on the light emitting diode and the transparent encapsulating resin;
A semiconductor device having an input terminal connected to the light emitting diode and energizing the light emitting diode to emit light.
[0030]
(Embodiment 8)
The transparent encapsulating resin is disposed on the light emitting diode, and the resin containing the fluorescent material is disposed at a distance from the light emitting diode by the transparent encapsulating resin. The semiconductor device according to Embodiment 7, wherein the resin containing the fluorescent material has a substantially uniform thickness.
[0031]
(Embodiment 9)
The semiconductor device according to Embodiment 7, further comprising a protective resin layer disposed on the resin containing the fluorescent material.
[0032]
(Embodiment 10)
The semiconductor device according to Embodiment 7, wherein one of the input terminals forms a reflector for the light emitting diode and a cup for the resin.
[0033]
(Embodiment 11)
8. The semiconductor device according to Embodiment 7, wherein a device substrate on which the light emitting diode is disposed and the resin is dropped is included.
[0034]
(Embodiment 12)
Embodiment 8 according to embodiment 7, characterized in that the light emitting diode emits light of a predetermined wavelength, which is partly converted to another wavelength by the fluorescent material, resulting in uniform white light. Semiconductor device.
[0035]
(Embodiment 13)
The light emitting diode emits blue light;
The fluorescent material includes a first fluorescent material that generates green light in response to the blue light, and a second fluorescent material that generates red light in response to the blue light, and The fluorescent material produces light that appears white from the blue light passing through it and the red and green light emitted therefrom;
8. The semiconductor device according to embodiment 7.
[0036]
(Embodiment 14)
A semiconductor device,
A sapphire substrate,
An indium doped gallium nitride epitaxial layer disposed on the sapphire layer to form a light emitting diode; and
A transparent encapsulating resin disposed around the sapphire substrate;
A YAG / Gd: Ce fluorescent material comprising a resin disposed on the epitaxial layer and the transparent encapsulating resin;
An input terminal connected to the epitaxial layer, energizing the epitaxial layer and emitting light;
Semiconductor device.
[0037]
(Embodiment 15)
The transparent encapsulating resin is disposed on the epitaxial layer, and the fluorescent material containing the resin is disposed at a distance from the epitaxial layer by the transparent encapsulating resin. The semiconductor device according to Embodiment 14.
[0038]
(Embodiment 16)
[CLAIM 15] The semiconductor device of Embodiment 14 characterized by including the protective layer arrange | positioned on the resin containing the said fluorescent substance.
[0039]
(Embodiment 17)
The semiconductor device according to embodiment 14, wherein one of the input terminals forms a reflector for the epitaxial layer on the sapphire substrate.
[0040]
(Embodiment 18)
The semiconductor device according to embodiment 14, wherein a device substrate on which the sapphire substrate is disposed is included.
[0041]
(Embodiment 19)
Implementation wherein the epitaxial layer emits light of a predetermined wavelength that is partially converted to another wavelength by the resin containing the fluorescent material to produce light that appears uniform white The semiconductor device according to aspect 14.
[0042]
(Embodiment 20)
The epitaxial layer produces blue light;
The resin comprising the YAG / Gd: Ce phosphor emits green and red light in response to most of the blue light;
The resin comprising the YAG / Gd: Ce phosphor produces light that appears white from the green and red light emitted therefrom and the remaining blue light passing therethrough,
The semiconductor device according to embodiment 14.
[0043]
【The invention's effect】
As described above, when the present invention is used, since the light-emitting diode covered with the transparent spacer is provided, the fluorescent material is more uniformly illuminated, and a uniform and uniform white light LED can be obtained. This eliminates the problem with white semiconductor lamps that emit yellow and / or blue light.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a conventional LED lamp.
FIG. 2 is an enlarged view of a prior art LED and its encapsulation system.
FIG. 3 is an enlarged view of an LED equipped with the encapsulation system of the present invention.
FIG. 4 is an enlarged view of an LED in a surface mount device using the encapsulation system of the present invention.
[Explanation of symbols]
10: LED lamp 12, 14: lead frame 16: concave reflection area 18: LED
20, 22: wire bond 24: fluorescent material 26: encapsulated epoxy resin 28, 30: light beam 32 of annular blue ring, 34: light beam 36 of outer yellow annular ring, 38: light beam 40, 42 of inner yellow annular ring : Thin area 44: Thick area 50: Transparent spacer 52: Fluorescent material 60: LED
62: Device substrate 64 of surface mount device: Transparent spacer 66: Layer of fluorescent material 68: Encapsulation layer

Claims (19)

半導体装置であって、
青色光を発光する発光半導体（１８、６０）と、
前記発光半導体（１８、６０）をカプセル封止するよう配置された半球形の透明スペーサ（５０、６４）と、
前記透明スペーサ（５０、６４）の上に配置された、厚さがほぼ均一の蛍光材料を含む層（５２、６６）と、
前記発光半導体（１８、６０）に接続されて、前記発光半導体に電力を供給し、発光させるリード・フレーム（１２、１４、６２）と
を有する半導体装置。A semiconductor device,
A light emitting semiconductor (18, 60) that emits blue light ;
A hemispherical transparent spacer (50, 64) arranged to encapsulate the light emitting semiconductor (18, 60);
A layer (52, 66) comprising a fluorescent material having a substantially uniform thickness disposed on the transparent spacer (50, 64);
A semiconductor device having a lead frame (12, 14, 62) connected to the light emitting semiconductor (18, 60) to supply electric power to the light emitting semiconductor to emit light. 前記透明スペーサ（５０、６４）が、前記発光半導体（１８、６０）の上に配置されることと、前記蛍光材料を含む層（５２、６６）が、前記透明スペーサ（５０、６４）によって、前記発光半導体（１８、６０）から間隔をあけて配置されることを特徴とする、請求項１に記載の半導体装置。  The transparent spacer (50, 64) is disposed on the light emitting semiconductor (18, 60), and the layer (52, 66) containing the fluorescent material is formed by the transparent spacer (50, 64). The semiconductor device according to claim 1, wherein the semiconductor device is arranged at a distance from the light-emitting semiconductor (18, 60). 前記蛍光材料を含む層（６６、５２）の上に配置された保護層（６８、２６）が含まれることを特徴とする、請求項１に記載の半導体装置。  2. The semiconductor device according to claim 1, further comprising a protective layer (68, 26) disposed on the layer (66, 52) containing the fluorescent material. 前記リード・フレーム（１２）の１つが、前記発光半導体（１８）のリフレクタ（１６）を形成することを特徴とする、請求項１に記載の半導体装置。  The semiconductor device according to claim 1, characterized in that one of the lead frames (12) forms a reflector (16) of the light emitting semiconductor (18). 前記発光半導体（１８、６０）が、前記蛍光材料を含む層（５２、６６）によって部分的に別の波長に変換され、所定の波長の光を放出することを特徴とする、請求項１に記載の半導体装置。  The light-emitting semiconductor (18, 60) is partially converted into another wavelength by the layer (52, 66) containing the fluorescent material, and emits light of a predetermined wavelength. The semiconductor device described. 前記発光半導体（１８、６０）が、青色光を放出することと、
前記蛍光材料を含む層（５２、６６）に、前記青色光の大部分に反応して、前記青色光の残りの部分と結合可能な光を発生し、それによって白色光が得られるようにする蛍光物質が含まれていることと
を特徴とする請求項１に記載の半導体装置。The light emitting semiconductor (18, 60) emits blue light;
The layer containing the fluorescent material (52, 66) reacts with most of the blue light to generate light that can be combined with the rest of the blue light, thereby obtaining white light. The semiconductor device according to claim 1, further comprising a fluorescent material. 半導体装置であって、
青色光を発光する発光ダイオードと、
前記発光ダイオードをカプセル封止するよう配置された三次元方向に延びる層である半球形の透明なカプセル封止樹脂と、
前記透明なカプセル封止樹脂の上に配置され、三次元方向に延びる厚さがほぼ均一の蛍光材料を含む樹脂であって、その上に保護樹脂層が配置された、前記蛍光材料を含む前記樹脂と、
前記発光ダイオードに接続されて、前記発光ダイオードに電力を供給し、発光させるリード・フレームと
を有する半導体装置。A semiconductor device,
A light emitting diode emitting blue light ;
A hemispherical transparent encapsulation resin that is a layer extending in a three-dimensional direction and arranged to encapsulate the light emitting diode;
A resin that includes a fluorescent material that is disposed on the transparent encapsulating resin and that has a substantially uniform thickness extending in a three-dimensional direction , the protective resin layer being disposed on the resin. Resin ,
A semiconductor device comprising: a lead frame connected to the light emitting diodes for supplying power to the light emitting diodes to emit light. 前記透明なカプセル封止樹脂が、前記発光ダイオードの上に配置されることと、前記蛍光材料を含む前記樹脂が、前記透明なカプセル封止樹脂によって、前記発光ダイオードから間隔をあけて配置されることと、前記蛍光材料を含む前記樹脂が、ほぼ均一な厚さであることとを特徴とする、請求項７に記載の半導体装置。  The transparent encapsulating resin is disposed on the light emitting diode, and the resin containing the fluorescent material is disposed at a distance from the light emitting diode by the transparent encapsulating resin. The semiconductor device according to claim 7, wherein the resin containing the fluorescent material has a substantially uniform thickness. 前記リード・フレームの１つが、前記発光ダイオード用のリフレクタ、及び、前記樹脂用のカップを形成することを特徴とする、請求項７に記載の半導体装置。  8. The semiconductor device according to claim 7, wherein one of the lead frames forms a reflector for the light emitting diode and a cup for the resin. 前記リード・フレームには、前記発光ダイオードが配置され、前記樹脂が滴下されていることを特徴とする、請求項７に記載の半導体装置。  The semiconductor device according to claim 7, wherein the light emitting diode is disposed on the lead frame, and the resin is dropped. 前記発光ダイオードが、前記蛍光材料によって部分的に別の波長に変換されて、均一な白色光を生じることになる、所定の波長の青色光を放出することを特徴とする、請求項７に記載の半導体装置。8. The light emitting diode emits blue light of a predetermined wavelength that is partially converted to another wavelength by the fluorescent material to produce uniform white light. Semiconductor device. 前記発光ダイオードが、青色光を放出することと、
前記蛍光材料に、前記青色光に反応して、緑色光を生じる第１の蛍光物質と、前記青色光に反応して、赤色光を生じる第２の蛍光物質が含まれていることと、
前記蛍光材料が、それを通る前記青色光、及び、それから放出される前記赤色及び前記緑色光から白に見える光を生じることを特徴とする、
請求項７に記載の半導体装置。The light emitting diode emits blue light;
The fluorescent material includes a first fluorescent material that generates green light in response to the blue light, and a second fluorescent material that generates red light in response to the blue light;
The fluorescent material produces light that appears white from the blue light passing through it and the red and green light emitted therefrom;
The semiconductor device according to claim 7. 半導体装置であって、
サファイア基板と、
前記サファイア層の上に配置されて、青色光を発光する発光ダイオードを形成する、インジウムをドープした窒化ガリウムのエピタキシャル層と、
前記サファイア基板のまわりに配置された、エピタキシャル層をカプセル封止する透明な半球状のカプセル封止樹脂と、
前記カプセル封止樹脂の上に配置される厚さがほぼ均一の樹脂に含まれるＹＡＧ／Ｇｄ：Ｃｅ蛍光物質と、
前記エピタキシャル層に接続されて、前記エピタキシャル層に電力を供給し、青色光を放出させるリード・フレームが含まれている、
半導体装置。A semiconductor device,
A sapphire substrate,
An indium-doped gallium nitride epitaxial layer disposed on the sapphire layer to form a light emitting diode emitting blue light ;
A transparent hemispherical encapsulation resin encapsulating the epitaxial layer, disposed around the sapphire substrate;
A YAG / Gd: Ce fluorescent material contained in a substantially uniform resin disposed on the encapsulating resin;
A lead frame connected to the epitaxial layer to supply power to the epitaxial layer and emit blue light;
Semiconductor device. 前記透明なカプセル封止樹脂が、前記エピタキシャル層の上に配置され、樹脂を含む前記蛍光物質が、前記透明なカプセル封止樹脂によって前記エピタキシャル層から間隔をあけて配置されることを特徴とする、請求項１３に記載の半導体装置。The transparent encapsulating resin is disposed on the epitaxial layer, and the fluorescent material containing the resin is disposed at a distance from the epitaxial layer by the transparent encapsulating resin. The semiconductor device according to claim 13 . 前記蛍光物質を含む樹脂の上に配置された保護層が含まれることを特徴とする、請求項１３に記載の半導体装置。The semiconductor device according to claim 13 , further comprising a protective layer disposed on the resin containing the fluorescent material. 前記リード・フレームの１つが、前記サファイア基板上において前記エピタキシャル層用のリフレクタを形成することを特徴とする、請求項１３に記載の半導体装置。The semiconductor device according to claim 13 , wherein one of the lead frames forms a reflector for the epitaxial layer on the sapphire substrate. 前記リード・フレームには、前記サファイア基板が配置されていることを特徴とする、請求項１３に記載の半導体装置。The semiconductor device according to claim 13 , wherein the sapphire substrate is disposed on the lead frame. 前記エピタキシャル層が、前記蛍光物質を含む樹脂によって部分的に別の波長に変換されて、均一な白に見える光を生じることになる、所定の波長の青色光を放出することを特徴とする、請求項１３に記載の半導体装置。The epitaxial layer emits blue light of a predetermined wavelength, which is partially converted to another wavelength by the resin containing the fluorescent material to produce light that looks uniform white, The semiconductor device according to claim 13 . 前記エピタキシャル層が、青色光を生じることと、
前記ＹＡＧ／Ｇｄ：Ｃｅ蛍光物質を含む樹脂が、前記青色光の大部分に反応して、緑色及び赤色光を放出することと、
前記ＹＡＧ／Ｇｄ：Ｃｅ蛍光物質を含む樹脂が、それから放出される前記緑色及び赤色光と、それを通る前記残りの青色光から白に見える光を生じることを特徴とする、
請求項１３に記載の半導体装置。The epitaxial layer produces blue light;
The resin comprising the YAG / Gd: Ce phosphor emits green and red light in response to most of the blue light;
The resin comprising the YAG / Gd: Ce phosphor produces light that appears white from the green and red light emitted therefrom and the remaining blue light passing therethrough,
The semiconductor device according to claim 13 .
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