JP2000031547A - Planar light source - Google Patents
Planar light sourceInfo
- Publication number
- JP2000031547A JP2000031547A JP19350898A JP19350898A JP2000031547A JP 2000031547 A JP2000031547 A JP 2000031547A JP 19350898 A JP19350898 A JP 19350898A JP 19350898 A JP19350898 A JP 19350898A JP 2000031547 A JP2000031547 A JP 2000031547A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength conversion
- light source
- sheet
- planar light
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は照光式スイッチ、表示パ
ネル、液晶表示装置のバックライト等に使用される面状
の光源に関するものであり、詳細には、発光ダイオード
チップ（以下、ＬＥＤチップと称す）からの放射光の色
変換を目的とする波長変換物質を使用してＬＥＤチップ
からの出射光と異なる色調を発光する面状光源に係るも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a planar light source used for an illuminated switch, a display panel, a backlight of a liquid crystal display, and the like. More specifically, the present invention relates to a light emitting diode chip (hereinafter referred to as an LED chip). The present invention relates to a planar light source that emits a color tone different from that emitted from an LED chip by using a wavelength conversion material for the purpose of color conversion of emitted light from the LED chip.
【０００２】[0002]
【従来の技術】従来の液晶表示装置のバックライト等と
して使用される面状光源として、導光板の端面に冷陰極
管（ＣＦＬ）を配設したエッジライト方式のバックライ
トや面状であるエレクトロルミネッセンス（ＥＬ）素子
が用いられている。しかし、ＣＦＬを光源としたものは
インバータ等の点灯回路を必要とするため全体として大
型化するなどの問題点がある。また、エッジライト方式
を利用しているので、全体の均一発光を得ることが難し
く光源から遠い部分の輝度が低いという問題点もある。
ＥＬを用いた場合には発光輝度が暗く、寿命が短いとい
う問題点がある。2. Description of the Related Art As a planar light source used as a backlight or the like of a conventional liquid crystal display device, an edge-light type backlight in which a cold cathode fluorescent lamp (CFL) is disposed on an end face of a light guide plate, or a planar electroluminescent device. A luminescence (EL) element is used. However, a device using a CFL as a light source requires a lighting circuit such as an inverter, so that there is a problem that the overall size is increased. In addition, since the edge light method is used, it is difficult to obtain uniform light emission as a whole, and there is a problem in that the luminance of a portion far from the light source is low.
When EL is used, there is a problem that the emission luminance is dark and the life is short.
【０００３】そこで、寿命に優れ、低消費電力という特
徴を有する発光ダイオード（以下ＬＥＤと称す）を光源
として利用したバックライトも提案されている。例え
ば、前記したＣＦＬの代わりにＬＥＤを配置したエッジ
ライト方式のものや、、図５、図６に示したように赤
（Ｒ）、緑（Ｇ）、青（Ｂ）の３色のＬＥＤ群９２を１
単位として、複数単位のＬＥＤ群９２を平面基板９１の
上に配置し、その上に距離を設けて拡散板９３を固定し
た面状光源９０とした実開昭６３−４３１７７号のよう
なものがある。Therefore, a backlight using a light emitting diode (hereinafter, referred to as an LED) having a long life and low power consumption as a light source has been proposed. For example, an edge light type in which LEDs are arranged instead of the CFL, or a group of three colors of red (R), green (G), and blue (B) as shown in FIGS. 92 to 1
As a unit, a planar light source 90 in which a plurality of LED groups 92 are arranged on a flat substrate 91 and a diffusion plate 93 is fixed at a distance above the LED group 92 as shown in JP-A-63-43177. is there.
【０００４】しかし、該面状光源９０は、液晶表示装置
のバックライトとしてＲ、Ｇ、Ｂ各波長域の色の発光ス
ペクトルを含有している白色光を得るための手段として
有用ではあるが、Ｒ、Ｇ、Ｂの波長を発光する各ＬＥＤ
の放射光を拡散板９３にて拡散させるものとしているた
め（図６参照）、ＬＥＤ群９２と拡散板９３との距離を
設けないと色むらが生じ均一混合色とすることはできな
かった。また、均一混合色とするためにはＬＥＤ群９２
毎に各色のＬＥＤの発光領域が一致するように設定しな
ければならず、均一混合色発光を得るための調整が困難
であった。また、Ｒ、Ｇ、Ｂの各ＬＥＤが一定の明るさ
で点灯するようにしなければならないため、各ＬＥＤを
別個に点灯制御するように配線しなければならないとい
う問題点もある。さらにまた、均一な混合色、均一な明
るさとするためには上記した理由により拡散板とＬＥＤ
群とをある程度離して設ける必要があり、面状光源の薄
型化が困難という問題点がある。However, the planar light source 90 is useful as a backlight for a liquid crystal display device as a means for obtaining white light containing emission spectra of colors of R, G, and B wavelength ranges. LEDs that emit R, G, and B wavelengths
Is diffused by the diffusion plate 93 (see FIG. 6), and if the distance between the LED group 92 and the diffusion plate 93 is not provided, color unevenness occurs and a uniform mixed color cannot be obtained. In order to obtain a uniform color mixture, the LED group 92
It has to be set so that the light emitting area of the LED of each color coincides with each other, and it is difficult to adjust to obtain uniform mixed color light emission. In addition, since each of the R, G, and B LEDs must be illuminated at a constant brightness, there is a problem in that wiring must be performed so that each of the LEDs is separately lit. Furthermore, in order to obtain a uniform mixed color and a uniform brightness, a diffusion plate and an LED are used for the reasons described above.
It is necessary to provide a certain distance from the group, and it is difficult to reduce the thickness of the planar light source.
【０００５】一方、ＬＥＤによる放射色は該ＬＥＤに使
用されているＬＥＤチップの材料に依存するため、蛍光
体を樹脂中に分散したものをＬＥＤチップ周囲にディッ
プした後に樹脂を硬化して、ＬＥＤチップからの放射光
の波長を変換して、白色発光を得る発光ダイオードも提
案されている。On the other hand, the emission color of the LED depends on the material of the LED chip used in the LED. Therefore, a phosphor dispersed in a resin is dipped around the LED chip, and then the resin is cured. A light emitting diode that obtains white light by converting the wavelength of light emitted from a chip has also been proposed.
【０００６】そこで、図５に示したＬＥＤ群９２を１個
のＬＥＤチップとして面状光源を作成した。その際、図
６に点線で記すようにＬＥＤ群９２に代えて配置した１
個のＬＥＤチップの周囲には、熱硬化樹脂に蛍光体を分
散させた蛍光体層９５を該ＬＥＤチップを覆うようにし
て滴下した後に硬化させており、また、これらの前面に
図６のように拡散板９３を設けている。Therefore, a planar light source was prepared by using the LED group 92 shown in FIG. 5 as one LED chip. At this time, as shown by a dotted line in FIG.
Around the LED chips, a phosphor layer 95 in which a phosphor is dispersed in a thermosetting resin is dropped so as to cover the LED chips, and then cured. As shown in FIG. Is provided with a diffusion plate 93.
【０００７】該面状光源においては全て同一のＬＥＤチ
ップを用いたので、前記したような各色ＬＥＤチップ放
射光が均一に混合しないことに起因する均一混合色発光
を得るための問題点は解決された。しかしながら、蛍光
体層９５により波長変換された光には波長変換ムラがあ
り、それにより色の均一性に劣っていた。これは蛍光体
含有樹脂を凸形状のＬＥＤチップの周囲に同じ厚みで均
一に形成することが難かしいため、ＬＥＤチップから放
射された光が蛍光体層を通過する際の厚みの相違により
変換効率が異なること、及び蛍光体含有樹脂をＬＥＤチ
ップ周囲に滴下した後、硬化するまでの時間に比重の大
きな蛍光体が樹脂の下方に沈降して硬化したため、均一
分散していない蛍光体含有樹脂となったこと等に起因す
るものと思われる。[0007] Since the same LED chip is used in all of the planar light sources, the above-mentioned problem of obtaining a uniform mixed color light emission due to the inconsistent mixing of the LED chip emitted lights is solved. Was. However, the light whose wavelength was converted by the phosphor layer 95 had uneven wavelength conversion, resulting in poor color uniformity. This is because it is difficult to uniformly form the phosphor-containing resin with the same thickness around the convex LED chip, so that the light emitted from the LED chip passes through the phosphor layer, resulting in a difference in the conversion efficiency. Is different, and after dropping the phosphor-containing resin around the LED chip, the phosphor having a large specific gravity settles below the resin and cures during the time until it cures, so that the phosphor-containing resin is not uniformly dispersed. It is thought to be due to the fact that
【０００８】[0008]
【発明が解決しようとする課題】本発明は上述の問題点
を解決し、照光式スイッチ、表示パネル、液晶表示装置
のバックライト等に利用でき、長寿命、高信頼性なＬＥ
Ｄチップと波長変換物質を用いた面状光源を提供するこ
とを第１の目的とする。さらに、均一性に優れた薄型の
面状光源を提供することを第２の目的とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems, and can be used for an illuminated switch, a display panel, a backlight of a liquid crystal display device, etc., and has a long life and high reliability.
A first object is to provide a planar light source using a D chip and a wavelength conversion substance. It is a second object of the present invention to provide a thin planar light source having excellent uniformity.
【０００９】[0009]
【課題を解決するための手段】本発明は、基体上に複数
の発光ダイオードチップを配設し、該複数のチップ上に
該発光ダイオードチップから放射される光を波長変換す
る波長変換物質と、拡散処理を施したシートとを備える
面状光源であって、前記拡散処理を施したシートの発光
ダイオードチップ側の略全域には、予め所定の厚みに形
成したシート状の波長変換物質層が配設してある面状光
源を提供することで課題を解決するものである。According to the present invention, there is provided a wavelength conversion material having a plurality of light emitting diode chips disposed on a substrate, and a wavelength converting material for converting the wavelength of light emitted from the light emitting diode chips on the plurality of chips. A sheet-like light source comprising a sheet subjected to a diffusion treatment, and a sheet-like wavelength conversion material layer formed in advance to a predetermined thickness is disposed substantially over the entire area of the sheet subjected to the diffusion treatment on the light emitting diode chip side. An object of the present invention is to solve the problem by providing a provided planar light source.
【００１０】[0010]
【発明の実施の形態】つぎに、本発明について、図に示
す実施形態に基づいて詳細に説明する。図１は本発明に
かかる面状光源１０の概略平面図を、図２は図１の面状
光源１０のＡ−Ａ断面図を模式的に示す。なお、図３は
他の実施形態の面状光源２０の断面図を、図４は更に別
の実施形態の面状光源３０について一部切り欠いて説明
するもので、同一個所は同一符号を用いて説明してい
る。図１、２に示すように複数の凹部３を形成する反射
枠２を設けた基体１には、各ＬＥＤチップ５に電力を供
給する配線４が設けられており、前記凹部３内にはＬＥ
Ｄチップ５が凹部３内より外側に突出しないようにして
配線４と電気的に接続して配置されている。これらの前
面には波長変換シート６及び拡散板７が反射枠２と当接
して凹部３を覆うように積層され、これらをモールド樹
脂８により封止して面状光源１０を得ている。Next, the present invention will be described in detail based on an embodiment shown in the drawings. FIG. 1 is a schematic plan view of a surface light source 10 according to the present invention, and FIG. 2 is a schematic cross-sectional view of the surface light source 10 of FIG. FIG. 3 is a cross-sectional view of a planar light source 20 according to another embodiment, and FIG. 4 is a partially cut-away illustration of a planar light source 30 according to still another embodiment. Has been explained. As shown in FIGS. 1 and 2, a wiring 4 for supplying power to each LED chip 5 is provided on a base 1 provided with a reflection frame 2 forming a plurality of recesses 3.
The D chip 5 is electrically connected to the wiring 4 so as not to protrude outside the recess 3. On these front surfaces, a wavelength conversion sheet 6 and a diffusion plate 7 are laminated so as to abut on the reflection frame 2 and cover the concave portion 3, and these are sealed with a mold resin 8 to obtain a planar light source 10.
【００１１】（反射枠）反射枠２には、配置されたＬＥ
Ｄチップ５側面から出射した光が上面に反射するように
すり鉢状の形状とした凹部３が複数個所設けられ、該凹
部内面のすり鉢状の傾斜面３ａは高反射率を有するもの
とされている。反射枠２を金属により作成して傾斜面３
ａを鏡面加工するものとしたり、高反射率となるように
白色樹脂よりなる傾斜面３ａとしたり、金属・樹脂等に
より反射枠を作成して傾斜面３ａに高反射率となるＡ
ｌ、Ａｇ、Ｗなどの金属や、ＴｉＯ２などの酸化物など
の高反射率材料よりなる被膜を形成するものとするなど
の方法により高反射率な傾斜面３ａを有す反射枠２とす
ることができる。(Reflection Frame) In the reflection frame 2, the LE
A plurality of mortar-shaped concave portions 3 are provided so that light emitted from the side surface of the D chip 5 is reflected on the upper surface, and the mortar-shaped inclined surface 3a on the inner surface of the concave portion has a high reflectance. . The reflection frame 2 is made of metal and the inclined surface 3
a is to be mirror-finished, or is an inclined surface 3a made of white resin so as to have a high reflectivity, or a reflective frame is made of a metal, resin, or the like so that the inclined surface 3a has a high reflectivity.
A method of forming a coating made of a high-reflectance material such as a metal such as l, Ag, and W or an oxide such as TiO2 to form the reflection frame 2 having the high-reflection inclined surface 3a. Can be.
【００１２】また、反射枠２の傾斜面３ａに、図３に示
したように波長変換物質層３ｂを設けることもできる。
波長変換物質層３ｂとしては、後述する波長変換シート
６に用いる波長変換物質層６ｂと同じ材料を用いること
ができる。このようにすると、凹部傾斜面３ａに放射さ
れた光に対しても効果的に波長変換ができ好ましいもの
となる。Further, a wavelength conversion material layer 3b can be provided on the inclined surface 3a of the reflection frame 2 as shown in FIG.
As the wavelength conversion material layer 3b, the same material as the wavelength conversion material layer 6b used for the wavelength conversion sheet 6 described later can be used. By doing so, the wavelength conversion can be effectively performed even on the light emitted to the concave inclined surface 3a, which is preferable.
【００１３】(基体)基体１は、金属、ガラスエポキシ樹
脂などの様々なものを用いることができる。特に金属な
どの熱伝導率の高い材料を用いて形成すると、多数のＬ
ＥＤチップ５を基体１上に設けた場合に発生する熱を外
部に効率よく伝導することができ好ましい。また、基体
１と反射枠２とは一体に形成したものとしても、別体に
形成し両者を接合したものとしても、どちらも使用でき
る。基体１と反射枠２とを一体に形成するには、例えば
ガラスエポキシ樹脂板にすり鉢状の凹部３を切削して形
成したり、所定形状の金型に樹脂を射出して成形したり
することにより得ることができる。(Substrate) As the substrate 1, various materials such as metal and glass epoxy resin can be used. In particular, when formed using a material having high thermal conductivity such as metal, a large number of L
This is preferable because heat generated when the ED chip 5 is provided on the base 1 can be efficiently conducted to the outside. Further, either the base 1 and the reflection frame 2 may be formed integrally, or both may be formed separately and joined together. In order to form the base 1 and the reflection frame 2 integrally, for example, a mortar-shaped concave portion 3 is formed by cutting a glass epoxy resin plate, or a resin is injected into a mold having a predetermined shape and molded. Can be obtained by
【００１４】(配線)配線４は各ＬＥＤチップに電力を供
給するために設けられるもので、Ｃｕメッキなどを施す
ことにより形成されている。基体１と反射枠２を一体に
成形した場合には、凹部３内のＬＥＤチップ５に接続す
る配線４を傾斜面３ａに形成する必要があるので、マス
クを施して無電解メッキ、電解メッキを続けて実施する
などの方法により凹部３及び傾斜面３ａを含む反射枠２
表面に直接に配線４を設けることができる。基体１と反
射枠２とを別体に形成した場合には、例えば、予めガラ
スエポキシ等からなる基体１上に公知の方法で配線４を
設け、反射枠２には配線４を設けることなく射出成形等
の方法により凹部３を有するように白色樹脂などを用い
て成形する。その後、前記基体１と前記反射枠２とを接
着若しくはネジ等を用いて螺着する等により結合して固
定して一体化する。(Wiring) The wiring 4 is provided to supply power to each LED chip, and is formed by applying Cu plating or the like. When the base 1 and the reflection frame 2 are integrally formed, it is necessary to form the wiring 4 connected to the LED chip 5 in the recess 3 on the inclined surface 3a. The reflection frame 2 including the concave portion 3 and the inclined surface 3a by a method such as a continuous operation.
The wiring 4 can be provided directly on the surface. When the base 1 and the reflection frame 2 are formed separately, for example, the wiring 4 is provided on the base 1 made of glass epoxy or the like by a known method, and the reflection frame 2 is injected without providing the wiring 4. It is molded by using a white resin or the like so as to have the concave portion 3 by a method such as molding. After that, the base 1 and the reflection frame 2 are joined and fixed by bonding or screwing with screws or the like, and integrated.
【００１５】（ＬＥＤチップ）ＬＥＤチップ５は、例え
ば青色および／または紫外光（λ＝３７０〜５００ｎ
ｍ）を出射するＧａＮ系のＬＥＤチップを用いることが
できる。発光層から放射される波長光に対して透過性の
サファイア等からなる透光性基板５ａの上にＧａＮ系の
発光層５ｂをＭＯＣＶＤ法で形成し、同一面側に図示し
ないｐ電極およびｎ電極を形成したもの等を利用でき
る。(LED Chip) The LED chip 5 is made of, for example, blue and / or ultraviolet light (λ = 370 to 500 n).
m) can be used. A GaN-based light-emitting layer 5b is formed by MOCVD on a light-transmitting substrate 5a made of sapphire or the like that transmits light having a wavelength emitted from the light-emitting layer, and a p-electrode and an n-electrode (not shown) are formed on the same surface. Can be used.
【００１６】また、本実施形態においては、ＬＥＤチッ
プ５の電極と配線４との電気的接続に従来多用されてい
るワイヤーを用いずに接続している。即ち、ｐ電極およ
びｎ電極の夫々にはボンディング用バンプを形成し、該
バンプを介して基体１に形成した配線４とを電気的に接
続している。これにより放射光に対して透光性を示す基
板５ａが上面側となり、凹部３の高さを最小限にするこ
とができるものとなり好ましいものとなる。なお、ＬＥ
Ｄチップ５はＧａＮ系のＬＥＤに限られるものではな
く、ＳｉＣ系ＬＥＤ、ＺｎＳｅ系ＬＥＤ、ＧａＡｓ系Ｌ
ＥＤ（λ＝６３０〜８５０ｎｍ）、ＧａＡｌＡｓ系ＬＥ
Ｄ、ＺｎＯ系ＬＥＤ等を用いることができる。In this embodiment, the electrodes of the LED chip 5 and the wiring 4 are electrically connected without using wires which are conventionally used frequently. That is, a bump for bonding is formed on each of the p-electrode and the n-electrode, and the wiring 4 formed on the base 1 is electrically connected via the bump. As a result, the substrate 5a that is transparent to the radiated light is on the upper surface side, and the height of the recess 3 can be minimized, which is preferable. Note that LE
The D chip 5 is not limited to a GaN-based LED, but includes a SiC-based LED, a ZnSe-based LED, and a GaAs-based LED.
ED (λ = 630-850 nm), GaAlAs-based LE
D, ZnO-based LEDs and the like can be used.
【００１７】（波長変換シート）波長変換シート６は、
蛍光体等の波長変換物質によりＬＥＤチップ５からの照
射光の波長を異なる波長に変換するものであり、波長変
換物質と、波長変換物質を保持する樹脂結合剤とを均一
に混合したものを、シート状の樹脂フィルムまたはガラ
ス等からなる透光性シート基板６ａ上に波長変換物質層
６ｂを塗布硬化させたもの等を用いることができる。ま
た、予め波長変換物質を熱硬化型樹脂よりなる分散媒に
分散させ、十分に攪拌させた後に、成形型に前記分散媒
を流し込み、一定時間静置させ、その後分散媒を硬化さ
せて比重差を利用して下部側には波長変換物質が高密度
に均一分散し、上側には低密度もしくは波長変換物質が
分散していない低密度波長変換素子領域を形成した波長
変換シートを用いることもできる。さらに、低密度もし
くは波長変換物質が分散していない低密度波長変換素子
層と波長変換物質を高密度に均一分散した高密度波長変
換素子層とを射出成形などの手法により所定形状に積層
成形した波長変換シート等とすることもできる。(Wavelength Conversion Sheet) The wavelength conversion sheet 6
A wavelength conversion material such as a phosphor converts the wavelength of the irradiation light from the LED chip 5 to a different wavelength. A wavelength conversion material and a resin binder holding the wavelength conversion material are uniformly mixed. A material obtained by applying and curing a wavelength conversion material layer 6b on a sheet-like resin film or a translucent sheet substrate 6a made of glass or the like can be used. Further, the wavelength conversion material is dispersed in advance in a dispersion medium made of a thermosetting resin, and after sufficiently stirring, the dispersion medium is poured into a molding die and allowed to stand for a certain period of time. A wavelength conversion sheet in which the wavelength conversion material is uniformly dispersed at a high density on the lower side and a low-density or low-density wavelength conversion element region where the wavelength conversion material is not dispersed can be used on the upper side. . Furthermore, a low-density wavelength conversion element layer in which the low-density or wavelength conversion substance is not dispersed and a high-density wavelength conversion element layer in which the wavelength conversion substance is uniformly dispersed at a high density were laminated and formed into a predetermined shape by a method such as injection molding. It may be a wavelength conversion sheet or the like.
【００１８】また、波長変換物質としては、例えば銅等
の不純物を付活したＺｎＳ系蛍光体等を用いることがで
き、ＺｎＳ：Ｃｕ、Ａｕ、Ａｌ蛍光体、ＺｎＳ：Ｃｕ、
Ａｌ蛍光体、ＺｎＳ：Ａｇ蛍光体、ＺｎＳ：Ａｇ＋（Ｚ
ｎ、Ｃｄ）Ｓ：Ｃｕ、Ａｌ蛍光体等のＺｎＳにＡｇ、Ｃ
ｕ、Ａｌ、Ｇａ、Ｃｌなどの種々の不純物を付活させた
ものや、（Ｚｎ、Ｃｄ）ＳにＣｕ、Ａｌ、Ａｇ等の不純
物を付活させたものなどを用いて青、白、黄緑等の色に
変換するもの、ＮｄＰ５Ｏ１４、ＬｉＮｄＰ４Ｏ １２、
Ｎａ５Ｎｄ（ＷＯ４）４、Ａｌ３Ｎｄ（ＢＯ３）４、Ｃ
ｓ２ＮａＮｄＣｌ ６、ＳｒＳなど各種の赤外励起蛍光
体、およびその他の様々な蛍光体を単独で、もしくは複
数の蛍光体を組み合わせて使用することで、異なる波長
に変換するものとすることができる。また、波長変換物
質として蛍光体ではなく、染料等の特定波長吸収物質を
用いて波長変換するなどとすることもできる。The wavelength conversion material is, for example, copper or the like.
It is possible to use a ZnS-based phosphor activated with impurities
, ZnS: Cu, Au, Al phosphor, ZnS: Cu,
Al phosphor, ZnS: Ag phosphor, ZnS: Ag + (Z
n, Cd) S: Ag, C on ZnS such as Cu, Al phosphor, etc.
Activated various impurities such as u, Al, Ga, Cl
Impurities such as Cu, Al, Ag etc. in (Zn, Cd) S
Using things activated, etc., to colors such as blue, white, yellow-green
What to convert, NdP5O14, LiNdP4O 12,
Na5Nd (WO4)4, Al3Nd (BO3)4, C
s2NaNdCl 6Infrared excitation fluorescence such as SrS
Body and various other phosphors, alone or in combination
By using a combination of different phosphors, different wavelengths
Can be converted to Also, wavelength converter
Use a specific wavelength absorbing substance such as a dye instead of a phosphor
It can be used for wavelength conversion.
【００１９】（拡散板）拡散板７は、ヘアライン加工、
梨地処理、ドット印刷など各種の公知の方法により拡散
処理が施すことで、ＬＥＤチップ５からの照射光を拡散
して均一な発光面を得るようにしたもので、樹脂シート
等により形成し、波長変換シート６表面に配設する。ま
た、波長変換シート６の透光性シート基板表面にも凹凸
形状を形成するなどの拡散処理を施すと同時に拡散板７
も並設するものとして、より一層の均一化を図る等とす
ることも可能であるし、波長変換シート６の表面に拡散
処理を施して拡散板７を省略する等の変更もできる。な
お、拡散板７をＬＥＤチップ５側に配設し波長変換シー
ト６を表面側とすることもできるが、波長変換シート
６、更に好ましくは波長変換物質がより多く存在する波
長変換物質層６ｂがＬＥＤチップ５側に位置するように
設けることが好ましい。ＬＥＤチップ５からの照射光が
他の層中を通過して減衰する前に波長変換するようにＬ
ＥＤチップ側に波長変換物質を配置した方が高効率だか
らである。さらに、波長変換シート６中の波長変換物質
から発せられる光は拡散するものとなるので、従来と同
じ拡散板を用いた場合であっても、本願発明ではより一
層拡散効果が高められるものとなり、均一性が向上す
る。(Diffusion plate) Diffusion plate 7 is provided with hairline processing,
By performing diffusion processing by various known methods such as satin finish processing and dot printing, the light emitted from the LED chip 5 is diffused to obtain a uniform light emitting surface. It is arranged on the surface of the conversion sheet 6. In addition, a diffusion process such as forming irregularities on the surface of the translucent sheet substrate of the wavelength conversion sheet 6 is performed, and at the same time, the diffusion plate 7 is formed.
It is also possible to further improve the uniformity by juxtaposing them, or to make a change such as omitting the diffusion plate 7 by performing a diffusion process on the surface of the wavelength conversion sheet 6. Although the diffusion plate 7 can be disposed on the LED chip 5 side and the wavelength conversion sheet 6 can be on the front side, the wavelength conversion sheet 6, and more preferably the wavelength conversion material layer 6b in which more wavelength conversion material is present, is used. Preferably, it is provided so as to be located on the LED chip 5 side. L is converted so that the irradiation light from the LED chip 5 undergoes wavelength conversion before passing through other layers and attenuating.
This is because it is more efficient to arrange the wavelength conversion substance on the ED chip side. Furthermore, since the light emitted from the wavelength conversion material in the wavelength conversion sheet 6 is diffused, the diffusion effect is further enhanced in the present invention, even when the same diffusion plate as in the related art is used, The uniformity is improved.
【００２０】（モールド樹脂）モールド樹脂８は、基体
１及び波長変換シート６、拡散板７を覆うように形成さ
れ、エポキシ樹脂等により所定形状に形成される。図２
においては拡散板７と平行な表面となるよう方形状に形
成されているが、用途によっては図３に示したようなか
まぼこ状としたり、他の形状のレンズカットを形成した
りすることもできる。また、基体１と波長変換シート６
の間にＬＥＤチップ５を覆うようにして樹脂を設け、基
体１と波長変換シートを接着するものとし、波長変換シ
ート表面にモールド樹脂８が存在しないものとすること
もできる。更に、波長変換シートと基体１との間の外周
縁にモールド樹脂８を設け、ＬＥＤチップ５周囲他の波
長変換シートとＬＥＤチップ５との間の空間にＡｒ、Ｎ
ｅ、Ｘｅ、Ｋｒ、窒素などの不活性ガスを封止するもの
とする等の変更も可能である。(Mold Resin) The mold resin 8 is formed so as to cover the base 1, the wavelength conversion sheet 6, and the diffusion plate 7, and is formed into a predetermined shape with an epoxy resin or the like. FIG.
Is formed in a rectangular shape so as to have a surface parallel to the diffusion plate 7, but depending on the application, it may be formed in a semi-cylindrical shape as shown in FIG. 3 or a lens cut of another shape may be formed. . Further, the base 1 and the wavelength conversion sheet 6
A resin is provided so as to cover the LED chip 5 therebetween, and the base 1 and the wavelength conversion sheet are bonded together, and the mold resin 8 may not be present on the surface of the wavelength conversion sheet. Further, a mold resin 8 is provided on an outer peripheral edge between the wavelength conversion sheet and the base 1, and Ar, N is provided in a space around the LED chip 5 and another space between the wavelength conversion sheet and the LED chip 5.
Modifications such as sealing an inert gas such as e, Xe, Kr, or nitrogen are also possible.
【００２１】以下、本願発明の具体的実施例を説明す
る。 （実施例１）放熱効果を持たせるために金属でできた２
ｃｍ×３ｃｍの基体１上に絶縁層を印刷し、ＬＥＤチッ
プ５に電力を供給するための所定のパターンとなるよう
に配線４を形成する。また、その際、反射枠との位置合
わせのためのアライメントマークも作製しておく。次に
配線４を施した基体１上にＧａＮ系ＬＥＤチップ５の同
一面側に設けられた一対の電極の夫々に金属バンプを形
成して、反対側のＬＥＤチップ基板５ａ側が上面となる
ようにして多数のＬＥＤチップ５を所定位置の配線４に
接続する。すり鉢状の凹部３を複数有するように加工し
たセラミック製の反射枠２を基体１に形成しておいたア
ライメントマークを基準にして金属製基体１に接着固定
する。反射枠２は高さが２ｍｍとなるようにし、凹部３
はその断面が直線状または放物線状となる傾斜面３ａと
なるようにして形成してある。Hereinafter, specific embodiments of the present invention will be described. (Example 1) 2 made of metal to have a heat radiation effect
An insulating layer is printed on a substrate 1 cm × 3 cm, and wirings 4 are formed in a predetermined pattern for supplying power to LED chips 5. At this time, an alignment mark for alignment with the reflection frame is also prepared. Next, a metal bump is formed on each of a pair of electrodes provided on the same surface side of the GaN-based LED chip 5 on the base 1 on which the wiring 4 is provided, so that the opposite side of the LED chip substrate 5a becomes the upper surface. Many LED chips 5 are connected to the wirings 4 at predetermined positions. A reflection frame 2 made of ceramic, which has been processed so as to have a plurality of mortar-shaped recesses 3, is bonded and fixed to the metal base 1 with reference to the alignment marks formed on the base 1. The height of the reflection frame 2 is set to 2 mm,
Is formed so that its cross section becomes an inclined surface 3a having a linear or parabolic shape.
【００２２】波長変換シート６は白色光に変換するＺｎ
Ｓ系蛍光体１１．２ｇを分散媒である透光性エポキシ樹
脂１００ｇに混合したものを、ガラスからなる透光性シ
ート基板６ａ上に印刷後、硬化させて波長変換物質層６
ｂを形成して作製した。続いて、ＬＥＤチップ５を配設
した凹部３内にエポキシ樹脂８を流しこみ、気泡が入ら
ないようにして、予め準備しておいた前記波長変換シー
ト６を波長変換物質層６ｂ側がＬＥＤチップ５側となる
ようにして設置して加熱してエポキシ樹脂８を硬化させ
て接着固定する。また、梨地処理を施した白色ポリカー
ボネートフィルム拡散板７を波長変換シート６の上面に
配設し、更にこれらをエポキシ樹脂８にて覆うようにし
て封止することで、図１および図２に示すような面状光
源１０が得られた。こうして得られた面状光源１０に電
源を接続したところ均一な白色発光が得られ、該面状光
源を液晶表示装置のバックライトとして用いたところ良
好な表示が得られた。The wavelength conversion sheet 6 is made of Zn for converting to white light.
A mixture of 11.2 g of an S-based phosphor and 100 g of a light-transmitting epoxy resin as a dispersion medium is printed on a light-transmitting sheet substrate 6a made of glass, and then cured to be cured.
b was formed. Subsequently, the epoxy resin 8 is poured into the concave portion 3 in which the LED chip 5 is disposed, and the wavelength conversion sheet 6 prepared in advance is placed on the LED chip 5 so that air bubbles do not enter. The epoxy resin 8 is set so as to be on the side and heated to cure the epoxy resin 8 and to fix it. In addition, a white polycarbonate film diffusion plate 7 subjected to a satin finish treatment is disposed on the upper surface of the wavelength conversion sheet 6, and further, these are covered with an epoxy resin 8 and sealed, as shown in FIGS. 1 and 2. Such a planar light source 10 was obtained. When a power supply was connected to the planar light source 10 thus obtained, uniform white light emission was obtained. When the planar light source was used as a backlight of a liquid crystal display device, good display was obtained.
【００２３】（実施例２）前述した実施例１の面状光源
１０のモールド樹脂形状などを変更して図３に示すよう
な面状光源２０を作製する。反射枠２の傾斜面３ａに波
長変換シートに形成した条件と同じ条件で波長変換物質
層３ｂを設けた。また、面状光源２０を覆うモールド樹
脂８の形状を図３に示すようにかまぼこ状とし、更に、
拡散板７には所定色の表示パターンを印刷したものを用
いた。それ以外は実施例１と同様にして図３に示すよう
な面状光源２０を作製した。こうして得られた面状光源
２０に電源を接続したところ均一な白色発光が得られ、
該面状光源２０を照明スイッチの表示部とすると、拡散
板７に形成した表示色パターンが良好に観視されるスイ
ッチが得られた。(Embodiment 2) A planar light source 20 as shown in FIG. 3 is manufactured by changing the mold resin shape and the like of the planar light source 10 of Embodiment 1 described above. The wavelength conversion material layer 3b was provided on the inclined surface 3a of the reflection frame 2 under the same conditions as those formed on the wavelength conversion sheet. Further, the shape of the mold resin 8 that covers the planar light source 20 is a semi-cylindrical shape as shown in FIG.
As the diffusion plate 7, a display pattern of a predetermined color was used. Other than that, the planar light source 20 as shown in FIG. When a power source was connected to the planar light source 20 thus obtained, uniform white light emission was obtained.
When the planar light source 20 was used as a display unit of an illumination switch, a switch was obtained in which the display color pattern formed on the diffusion plate 7 could be viewed well.
【００２４】（実施例３）前述した実施例１では凹部３
内にモールド樹脂８を充填しているが、本実施例では不
活性ガスを封入して図４に示すような面状光源３０を作
製する。高さ２ｍｍの反射枠３２にすり鉢状とした凹部
３３を、夫々の凹部３３が離間するようにして形成す
る。この反射枠３２を実施例１のＬＥＤチップ５を取り
付けてある基体１に接着固定する。次にＡｒとＸｅの混
合ガスからなる雰囲気中において、拡散板７を接合した
波長変換シート６を前記反射枠３２の上方の平面に波長
変換物質を設けた側がＬＥＤチップ５側となるようにし
て真空用接着剤、例えば、米国Ｖａｒｉａｎ社製の商品
名Ｔｏｒｒ−Ｓｅａｌを用いて接着固定する。さらにこ
れらをエポキシ樹脂８にて覆うようにして封止して面状
光源３０を作製した。こうして得られた面状光源３０も
実施例１の面状光源と同様に良好な均一色の発光が得ら
れた。(Embodiment 3) In Embodiment 1 described above, the recess 3
Although the inside is filled with a mold resin 8, in the present embodiment, an inert gas is sealed to produce a planar light source 30 as shown in FIG. A mortar-shaped concave portion 33 is formed in a reflection frame 32 having a height of 2 mm so that the concave portions 33 are separated from each other. The reflection frame 32 is bonded and fixed to the base 1 on which the LED chip 5 of the first embodiment is mounted. Next, in an atmosphere composed of a mixed gas of Ar and Xe, the wavelength conversion sheet 6 to which the diffusion plate 7 is bonded is placed such that the side where the wavelength conversion substance is provided on the plane above the reflection frame 32 is the LED chip 5 side. An adhesive for vacuum, for example, Torr-Seal (trade name, manufactured by Varian, USA) is used for bonding and fixing. Further, these were sealed so as to be covered with the epoxy resin 8 to produce the planar light source 30. The planar light source 30 obtained in this manner also emitted light of a good uniform color similarly to the planar light source of Example 1.
【００２５】[0025]
【発明の効果】以上説明したように、本発明によれば、
予め波長変換物質の厚み、密度を所望の値に設定して形
成した波長変換シートを用いているので、波長変換物質
の厚み、分布の不均一に起因する変換効率差、さらに
は、それによる色ムラを著しく低減することができ、均
一な発光色の面状光源を得ることができる。また、波長
変換素子シートにより拡散光が生じ、その拡散光を更に
拡散する拡散処理層を設けることでより一層均一な発光
とすることができると共に、面状光源全体の厚みを薄く
することができるなどの優れた効果を奏する。As described above, according to the present invention,
Since a wavelength conversion sheet formed by setting the thickness and density of the wavelength conversion material in advance to desired values is used, the thickness of the wavelength conversion material, the conversion efficiency difference caused by uneven distribution, and further the color due to it. The unevenness can be significantly reduced, and a planar light source having a uniform emission color can be obtained. In addition, diffused light is generated by the wavelength conversion element sheet, and by providing a diffusion processing layer that further diffuses the diffused light, more uniform light emission can be achieved, and the overall thickness of the planar light source can be reduced. It has excellent effects such as.
【図１】 本発明の面状光源を説明する概略模式平面
図である。FIG. 1 is a schematic plan view illustrating a planar light source according to the present invention.
【図２】 図１の面状光源の概略断面図である。FIG. 2 is a schematic sectional view of the planar light source of FIG.
【図３】 本発明の他の実施形態を説明する概略断面
図である。FIG. 3 is a schematic cross-sectional view illustrating another embodiment of the present invention.
【図４】 本発明の別の実施形態を一部を切り欠いて
説明する概略斜視図である。FIG. 4 is a schematic perspective view illustrating another embodiment of the present invention by partially cutting out the embodiment.
【図５】 従来の面状光源を説明する概略平面図であ
る。FIG. 5 is a schematic plan view illustrating a conventional planar light source.
【図６】 従来の面状光源を説明する概略断面図であ
る。FIG. 6 is a schematic sectional view illustrating a conventional planar light source.
１ 基体 ２ 反射枠 ３ 凹部 ４ 配線 ５ ＬＥＤチップ ６ 波長変換シート ７ 拡散板 ８ モールド樹脂 １０、２０、３０ 面状光源 ９０ 面状光源 ９１ 平面基板 ９２ ＬＥＤ群 ９３ 拡散板 REFERENCE SIGNS LIST 1 base 2 reflection frame 3 recess 4 wiring 5 LED chip 6 wavelength conversion sheet 7 diffusion plate 8 mold resin 10, 20, 30 planar light source 90 planar light source 91 plane substrate 92 LED group 93 diffusion plate
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5F041 AA05 AA14 AA31 CA33 CA35 CA36 CA40 CA41 CA43 CA65 DA04 DA09 DA13 DA36 DA44 DA73 DA78 DA82 DC08 DC22 EE23 EE25 FF01 FF04 FF06 FF11 5G435 AA04 AA14 AA18 BB04 BB15 FF03 GG25 HH00 HH06 HH20 LL00 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) LL00
Claims (4)
を配設し、該複数のチップ上に該発光ダイオードチップ
から放射される光を波長変換する波長変換物質と、拡散
処理を施したシートとを備える面状光源であって、前記
拡散処理を施したシートの発光ダイオードチップ側の略
全域には、予め所定の厚みに形成したシート状の波長変
換物質層が配設してあることを特徴とする面状光源。1. A plurality of light emitting diode chips are provided on a base, and a wavelength converting substance for converting the wavelength of light emitted from the light emitting diode chips on the plurality of chips and a sheet subjected to a diffusion treatment are provided. A planar light source provided, wherein a sheet-shaped wavelength conversion material layer formed in a predetermined thickness in advance is disposed substantially over the entire area of the light-emitting diode chip side of the sheet subjected to the diffusion treatment. Surface light source.
チップ間には傾斜面を有する反射枠が設けてあり、該傾
斜面には波長変換物質層が形成してあることを特徴とす
る請求項１記載の面状光源。2. A reflection frame having an inclined surface is provided between adjacent light emitting diode chips on the base, and a wavelength conversion material layer is formed on the inclined surface. The planar light source as described.
発光ダイオードチップとの空間には、透光性の樹脂が満
たされており、該樹脂により前記シートが接着されてい
ることを特徴とする請求項１または請求項２記載の面状
光源。3. A space between the sheet provided with the wavelength conversion material layer and the light emitting diode chip is filled with a translucent resin, and the sheet is adhered by the resin. The planar light source according to claim 1.
チップ間には傾斜面を有する反射枠が設けてあり、該反
射枠と前記波長変換物質層を設けたシートとが接着され
ており、該シートと発光ダイオードチップを載置した基
体との間の空間には、不活性ガスが封入されていること
を特徴とする請求項１または請求項２記載の面状光源。4. A reflection frame having an inclined surface is provided between adjacent light-emitting diode chips on the substrate, and the reflection frame and a sheet provided with the wavelength conversion material layer are bonded to each other, and the sheet is provided. 3. The planar light source according to claim 1, wherein an inert gas is sealed in a space between the light emitting diode chip and the substrate on which the light emitting diode chip is mounted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19350898A JP4171107B2 (en) | 1998-07-09 | 1998-07-09 | Planar light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19350898A JP4171107B2 (en) | 1998-07-09 | 1998-07-09 | Planar light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000031547A true JP2000031547A (en) | 2000-01-28 |
| JP4171107B2 JP4171107B2 (en) | 2008-10-22 |
Family
ID=16309232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19350898A Expired - Lifetime JP4171107B2 (en) | 1998-07-09 | 1998-07-09 | Planar light source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4171107B2 (en) |
Cited By (47)
| Publication number | Priority date | Publication date | Assignee | Title |
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