JP4109756B2 - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
JP4109756B2
JP4109756B2 JP19147698A JP19147698A JP4109756B2 JP 4109756 B2 JP4109756 B2 JP 4109756B2 JP 19147698 A JP19147698 A JP 19147698A JP 19147698 A JP19147698 A JP 19147698A JP 4109756 B2 JP4109756 B2 JP 4109756B2
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Japan
Prior art keywords
wavelength conversion
emitting diode
conversion element
light
horn
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Expired - Fee Related
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JP19147698A
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Japanese (ja)
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JP2000022222A (en
Inventor
道宏 佐野
宗弘 加藤
光範 原田
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スタンレー電気株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Description

[0001]
[Industrial application fields]
The present invention relates to a light emitting diode (hereinafter referred to as an LED), and more specifically, an LED using a wavelength conversion material for the purpose of color conversion of emitted light from a light emitting diode chip (hereinafter referred to as an LED chip). It is related to.
[0002]
[Prior art]
For example, JP-A-7-99345 is known as an example of a conventional LED using this type of wavelength converting substance. As shown in FIG. 6, an LED chip 93 is placed in a reflection horn 92 formed on the lead frame 91, one electrode of the LED chip 93 is connected to the reflection horn 92, and the other electrode is connected to the lead frame 94 with a wire 95. Are connected by bonding. In the reflection horn 92, a first resin 96 containing a conversion substance such as a fluorescent substance that converts the emission wavelength of the LED chip into another wavelength or a filter substance that absorbs a part of the emission wavelength is pre-dipped. Is cured. Thereafter, the second resin 97 having a refractive index smaller than that of the first resin and close to the refractive index of air is cured so as to cover them, thereby forming the LED 90.
[0003]
[Problems to be solved by the invention]
However, in the above-described conventional LED 90, the first resin 96 containing a wavelength converting material such as a fluorescent material is cured after pre-dipping in the reflection horn 92 so as to cover the LED chip 93 connected by wire bonding. Therefore, the first resin 96 has a non-uniform thickness covering a complicated convex shape. In addition, when pre-dipping the wavelength conversion material, the wavelength conversion material has a specific gravity larger than that of the resin, so that the wavelength conversion material settles before curing and the distribution of the wavelength conversion material after application becomes uneven. easy. For this reason, the light emitted from the LED chip is more non-uniformly wavelength-converted in the first resin 96 formed in various thicknesses. Therefore, there is a problem that the conversion efficiency is lowered, and the conversion efficiency varies depending on the position. As a result, the LED has a problem that color unevenness occurs.
[0004]
[Means for Solving the Problems]
The present invention provides, as specific means for solving the above-described conventional problems, a lead frame in which a reflection horn is formed, a light emitting diode chip mounted in the reflection horn, and a wavelength of light emitted from the light emitting diode chip. A light-emitting diode having a wavelength conversion element for conversion, and covering and sealing these with a light-transmitting material, and in the reflection horn, the light-transmitting substrate is located on the upper surface side of the reflection horn, The wavelength conversion element includes at least one light emitting diode chip disposed so that the electrode is electrically connected to the lead frame on the bottom surface side of the reflection horn. And a base layer, which is adjusted in advance so as to have a predetermined density and thickness, and is formed into a layered shape. The reflective horn has an engaging claw, and an upper portion of the light emitting diode chip, At that position, it is intended to solve the problems described above by the wavelength conversion element by engaging claw is to provide a light-emitting diode is fixed.
[0005]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail based on the embodiments shown in the drawings. FIG. 1 shows a light emitting diode 10 according to the present invention. The pair of lead frames 1 and 1 are formed with reflection horns 2 and 2, respectively, and the LED chip 3 is connected so that the bottom surfaces 2a and 2b of the reflection horns 2 and 2 and the electrodes 3c and 3d provided on the chips are respectively connected. It arrange | positions and the translucent board | substrate 3a is arrange | positioned so that it may be located above the reflective horn 2. As shown in FIG.
[0006]
Further, the wavelength conversion element 4 is disposed above the LED chip 3 so as to be in contact with the translucent substrate 3 a of the chip 3. The wavelength conversion element 4 is provided with a wavelength conversion element layer 4a in which a wavelength conversion substance and a resin binder that holds the wavelength conversion substance are uniformly mixed and coated and cured on a sheet-like substrate film 4b. Then, the wavelength conversion element layer 4 a is disposed in the reflection horn 2 so as to be in contact with the translucent substrate 3 a of the LED chip 3. An engagement claw 2c for fixing the wavelength conversion element 4 is formed on substantially the entire inner periphery of the reflection frame of the reflection horn 2. The portion of the base film 4b of the wavelength conversion element 4 is engaged with the engagement claw 2c. It is supposed to be securely fixed by pressing down.
[0007]
As the LED chip 3, for example, a GaN-based LED that emits blue and / or ultraviolet light (λ = 370 to 500 nm) can be used. A GaN-based light-emitting layer 3b is formed on a light-transmitting substrate 3a made of sapphire that is transparent to the emission wavelength, and a p-electrode 3c and an n-electrode 3d are formed on the same surface side. Further, in this embodiment, wire bonding connection is not performed as in the conventional example, and no wire is used for electrical connection between the electrode of the LED chip 3 and the reflection horn 2 of the lead frame 1. That is, a bonding bump is formed on each of the pair of electrodes of the p electrode 3c and the n electrode 3d, and the reflection horn bottom surfaces 2a and 2b of the pair of lead frames 1 and 1 are electrically connected via the bumps. is doing.
[0008]
Next, after fixing the wavelength conversion element 4, the outer periphery of the lead frames 1, 1 is covered with a translucent sealing material 5 that is molded and cured with a translucent epoxy resin so as to cover them. LED10 is obtained. The wavelength conversion element 4 has the wavelength conversion element layer 4a on the LED chip 3 side so that a large amount of wavelength conversion substance exists on the side in contact with the LED chip 3, and covers the entire surface of the reflection horn 2 as shown in the figure. It is preferable from the viewpoint of conversion efficiency and uniformity.
[0009]
As described above, the wavelength conversion element 4 is not pre-dipped in the reflection horn 2 and cured, but the wavelength conversion substance is formed in layers, so that the thickness of the wavelength conversion substance layer can be controlled, It is possible to make the wavelength conversion efficiency uniform and improve the efficiency. In addition, since uniform wavelength conversion is possible, color unevenness due to a difference in conversion efficiency can be significantly reduced. In addition, since the wavelength conversion element 4 is disposed directly above the LED chip 3 and fixed by the engaging claws 2c, the loss of light emitted from the LED chip, that is, light incident on the wavelength conversion element 4 is minimized. It can be fixed by pressing. Furthermore, by making the wavelength conversion element 4 large enough to cover the entire surface of the reflective horn 2, wavelength conversion is possible even for light emitted from the side surface of the LED chip 3, and even more uniform light emission. It can be.
[0010]
Here, the wavelength conversion element 4 will be further described. As described above, the wavelength conversion element 4 is formed by coating the wavelength conversion element layer 4a on the base film 4b, but is not limited thereto. For example, it can be obtained by the following method.
[0011]
FIGS. 2A to 2C are schematic views for explaining the method of manufacturing the wavelength conversion element 41 in the order of steps. The wavelength converting material 42 is previously dispersed in a dispersion medium 43 made of a thermosetting resin and sufficiently stirred. Next, the pattern mask 45 having a hole having a desired shape and the support 46 are overlapped, and a predetermined amount of the dispersion medium is poured into the hole and allowed to stand for a predetermined time. After that, when the dispersion medium is cured and released from the pattern mask 45, a high-density wavelength conversion element layer 41a in which the wavelength conversion material 42 is uniformly dispersed at a high density on the lower side due to a difference in specific gravity, and a low density or wavelength on the upper side. The wavelength conversion element 41 in which the low density wavelength conversion element layer 41b in which the conversion substance is not dispersed is formed is obtained. The thickness of the high-density wavelength conversion element layer 41a and the low-density wavelength conversion element layer 41b and the density of the wavelength conversion substance can be changed as appropriate according to the specific gravity, viscosity, time for which the material is injected and left, and the mixing ratio. You can adjust it.
[0012]
Specifically, 11.2 g of a ZnS-based phosphor having a specific gravity of 4.1 as the wavelength converting substance 42 is mixed with 100 g of a light-transmitting epoxy resin having a specific gravity of 1.1 as the dispersion medium 43, and 30 minutes at 500 rpm with a magnetic stirrer. Let stir for minutes. Next, a predetermined amount of this stirred suspension was poured into an opening having an outer shape of 2 mm and a depth of 1 mm of the pattern mask 45 with a dispenser 44, and left for 30 minutes. As a result, the wavelength converting material 42 having a large specific gravity settles down. In this state, heat treatment was performed to cure the epoxy resin 43, and when the pattern mask 45 was separated from the support 46, a circular pellet-shaped wavelength conversion element 41 having an outer diameter of 2 mm could be obtained.
[0013]
Examples of the wavelength converting substance 42 include ZnS: Cu, Au, Al phosphor, ZnS: Cu, Al phosphor, ZnS: Ag phosphor, ZnS: Ag + (Zn, Cd) S: Cu, and Al phosphor. In addition, blue, which is obtained by activating various impurities such as Ag, Cu, Al, Ga, Cl, etc., or (Zn, Cd) S, activated by impurities such as Cu, Al, Ag, etc. Various phosphors such as those that convert colors such as white and yellow-green, and other phosphors that mainly convert ultraviolet to blue wavelength light can be used alone or in combination with a plurality of phosphors. Further, as the dispersion medium 43, a thermosetting resin such as an epoxy resin having a high transmittance with respect to the emission wavelength and the conversion wavelength, PET (polyethylene terephthalate), silicon resin, polycarbonate, acrylic resin, or a UV curable resin. Various things can be used.
[0014]
The wavelength conversion element is not limited to the one manufactured by the above-described manufacturing method. As described above, the wavelength conversion material layer is applied or printed on the sheet-like translucent substrate, and wavelength conversion is performed. The material layer is cut into a predetermined shape after the material layer is formed, or the low density or wavelength conversion element layer in which the wavelength conversion substance is not dispersed and the high density wavelength conversion element layer in which the wavelength conversion substance is uniformly dispersed in a high density May be formed into a predetermined shape by a method such as injection molding or cut after molding.
[0015]
Next, the operation and effect of using the wavelength conversion element 40 in the LED 10 shown in FIG. 1 instead of the wavelength conversion element 4 of the LED 10 of the above-described embodiment will be described. The efficiency of wavelength conversion greatly depends on the density and thickness of the wavelength converting material excited by the irradiation light from the LED chip. Compared with the case where the wavelength conversion element 4 in the embodiment described above is used, when the wavelength conversion element 40 manufactured in the present embodiment is used, the wavelength conversion substance is denser than in the case of the previous embodiment. The provided high-density wavelength conversion material layer 41a can be easily and uniformly manufactured efficiently. Therefore, by providing the high-density wavelength conversion material layer 41 a so as to be in close contact with the LED chip 3, it is possible to further minimize the loss when the emitted light from the LED chip 3 reaches the wavelength conversion material 42.
[0016]
Next, another embodiment will be described. In the previous embodiment, the translucent substrate 3a of the LED chip 3 is provided on the wavelength conversion element 4 side, and the wavelength conversion element 4 is fixed so as to be in close contact with the substrate 3a. As shown in FIG. 3, the wavelength conversion element 34 is fixed so as not to be in close contact with the LED chip 33 and to be sandwiched between the reflection frame step 32d by the engaging claw 32c provided on the reflection horn. The LED chip 33 has a chip substrate 33 placed on the bottom surface of the reflection horn 32 formed on one lead frame 31, a pair of electrodes formed on the top surface of the LED chip substrate 33, the bottom surface of the reflection horn 32, and the other The bottom surface of the reflection horn 32 formed on the lead frame is electrically connected by wires 35. The wavelength conversion element 34 is disposed such that the high-density wavelength conversion element layer 34a in which the wavelength conversion substance is present at a high density is positioned on the LED chip 33 side, and the low-density wavelength conversion element layer 34b is positioned on the opposite side. .
[0017]
Thus, when connecting the LED chip 33 with the wire 35, since the wire 35 exists between the LED chip 35 and the wavelength conversion element 34, it cannot provide so that it may contact | adhere. Therefore, by providing the reflection horn 32 with a step 32d and the like, and fixing the wavelength conversion element 34 with the step 32d and the engaging claw 32c, uniform wavelength conversion can be performed as in the previous embodiment. When the wire exists between the LED chip and the wavelength conversion element as in the present invention, the light emitted from the light emitting layer is shielded by the wire and the electrode for providing the wire because of the wire, Since the distance between the two must be provided as appropriate, the utilization efficiency of the emitted light extracted from the LED light emitting layer to the outside is inferior. Therefore, in the case of wire connection, it is preferable to make the distance between the LED chip and the wavelength conversion element as short as possible and to reduce the area of the light-shielding substance such as the LED chip electrode and the wire existing therebetween.
[0018]
Next, still another embodiment will be described. In the previous embodiment, the reflection horns 2 and 2 are formed on both the lead frames 1 and 1. In this embodiment, as shown in FIG. 4, the reflection horn 12 is formed only on one lead frame 11 a, and an opening 14 is provided on the bottom surface of the reflection horn 12. The other lead frame 11 b is located in the opening 14 of the reflection horn 12 described above. The LED chip 13 is placed on the bottom surface of the reflection horn 12, and the pair of electrodes of the LED chip 13 are electrically connected to the reflection horn 12 and the lead frame 11 b located in the opening 14 of the reflection horn 12. Although the wavelength conversion element is not shown for easy understanding of the drawing, the wavelength conversion element is installed so as to be in close contact with the upper surface of the LED chip 13, and the engagement claw 12c formed on the entire circumference of the reflection horn 12 is used. The wavelength of emitted light from the LED chip 13 is changed as in the previous embodiment.
[0019]
By doing in this way, the engaging claw 12c which fixes a wavelength conversion element can be provided in the perimeter of the reflective frame outer periphery inner surface of the reflection horn 12, and when a wavelength conversion element is fixed, a reflection horn, a wavelength conversion element, It is possible to prevent any gaps between them. Thereby, the emitted light from the LED chip 13 whose wavelength is not converted from the gap does not leak, and the wavelength uniformity is further improved. The opening 14 is not limited to the circular shape as shown in the figure, and may be a U-shaped notch or the like.
[0020]
FIG. 5 shows a main part of the LED 20 of still another embodiment. In this embodiment, two LED chips 25 and 26 having different emission wavelengths are used. A lead frame 21a having an opening and a reflection horn 22 and three lead frames 21b and 21c located in the opening of 21a are provided. Two LED chips 25 and 26 are mounted on the bottom surface of the reflection horn 22. Is placed. The electrodes 25a and 25b of the LED chip 25 are connected to the reflection horn 22 and the lead frame 21b without using wires, respectively. The electrodes 26a and 26b of the LED chip 26 are also connected to the reflection horn 22 and the lead frame 21c without using wires, respectively. Further, a wavelength conversion element 24 is disposed on the LED chips 25 and 26 so as to be in close contact with each other, and a diffusion plate 27 is further disposed on the wavelength conversion element 24. It is fixed by the joint claw 22c.
[0021]
With this configuration, the light emitted from one LED chip 25 is wavelength-converted by the wavelength conversion element 24 that is indirectly fixed by the engaging claws 22 c, and the light is diffused by the diffusion plate 27. . Since the light emitted from the other LED chip 26 does not match the wavelength conversion element, the light emitted from the other LED chip 26 is transmitted without being subjected to wavelength conversion by the wavelength conversion element 24 and is directly fixed by the engaging claw 22c. To reach and spread. In the diffusion plate 27, light from both LED chips is diffused and uniformed. Thereby, the emission color of the LED 20 can be further arbitrarily changed as compared with the case where only the wavelength conversion element is used by the wavelength conversion color by the wavelength conversion element 24 and the emitted light color from the LED chip that is not wavelength-converted. Become. In addition, although the example using two LED chips that irradiate different wavelengths has been described, two or more LED chips may be used, or LED chips that irradiate the same wavelength may be used. Furthermore, it is possible to add a lens effect to the surface of the diffusing plate 27 or the wavelength conversion element so as to obtain a more uniform light emitting LED 20.
[0022]
In the embodiments described so far, the description has been given of the example in which the GaN-based LED chip that emits blue and / or ultraviolet light is used, and the phosphor that is the wavelength conversion substance is excited by the emitted light to convert the wavelength. However, the present invention is not limited to this, and a SiC LED, a ZnSe LED, a GaAs LED (λ = 630 to 850 nm), a GaAlAs LED, a ZnO LED, or the like is used as the LED chip, and the wavelength conversion material is mainly described above. For example, NdP 5 O 14 , LiNdP 4 O 12 , Na 5 Nd (WO 4 ) 4 , Al 3 Nd (BO 3 ) 4 , Cs 2 NaNdC are not limited to those that convert blue and / or ultraviolet light into other wavelengths. It can be converted to a different wavelength by l6 , SrS, or various infrared excitation phosphors. Further, wavelength conversion may be performed using a specific wavelength absorbing material such as a dye instead of a phosphor as the wavelength converting material.
[0023]
【The invention's effect】
As described above, according to the present invention, the wavelength conversion material is not dipted inside the reflective horn which is convex because the LED chip is placed as in the prior art. By separately providing a wavelength conversion element in which the thickness and density of the substance are set to desired values, uniform wavelength conversion is possible, and color unevenness due to a difference in conversion efficiency can be significantly reduced. In the present invention, since the wavelength conversion element is disposed directly above the LED chip, the loss of light emitted from the LED chip, that is, attenuation of light incident on the wavelength conversion element can be minimized. Furthermore, since the wavelength conversion element is fixed by the engaging claws so as to cover almost the entire surface of the reflection horn, wavelength conversion is possible even for light emitted from the side surface of the LED chip, and further. Uniform light emission can be achieved. In addition, even if there is a slight gap between the wavelength conversion element and the reflection horn, the presence of the engaging claw at that location makes it possible to prevent light leaking from the LED front direction due to the engaging claw. Has an effect.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view illustrating an LED of the present invention.
FIG. 2 is a schematic process diagram showing a method for manufacturing a wavelength conversion element of the present invention.
FIG. 3 is a schematic cross-sectional view illustrating another embodiment of the present invention.
FIG. 4 is a schematic perspective view illustrating another embodiment of the present invention.
FIG. 5 is a cross-sectional view of an essential part for explaining still another embodiment of the present invention.
FIG. 6 is a schematic diagram illustrating a conventional LED.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Lead frame 2 Reflection horn 3 LED chip 4 Wavelength conversion element 4a Wavelength conversion element layer 4b Sheet-like film 5 Translucent sealing material 10 LED
11a, 11b Lead frame 12 Reflective horn 12c Engaging claw 13 LED chip 14 Opening 30 LED
31 Lead frame 32 Reflection horn 32c Engaging claw 32d Reflection frame step 33 Substrate 34 Wavelength conversion element 34a High density wavelength conversion element layer 34b Low density wavelength conversion element layer 35 Wire 90 LED
91 Lead frame 92 Reflective horn 93 LED chip 94 Lead frame 95 Wire 96 First resin 97 Second resin

Claims (6)

  1. A lead frame in which a reflection horn is formed, a light emitting diode chip mounted in the reflection horn, and a wavelength conversion element that converts the wavelength of light emitted from the light emitting diode chip, and these are covered with a translucent material A sealed light emitting diode,
    At least one or more light emitting diodes disposed in the reflective horn so that the translucent substrate is located on the upper surface side of the reflective horn and the electrode is electrically connected to the lead frame on the lower surface side of the reflective horn Having a chip,
    The wavelength conversion element includes a wavelength conversion substance and a translucent substrate that holds the wavelength conversion substance, and is previously formed to have a predetermined density and thickness, and is formed in a layer shape,
    An engaging claw is formed on the reflection horn, and the wavelength conversion element is fixed by the engaging claw at a position above the light emitting diode chip.
  2. A lead frame in which a reflection horn is formed, a light emitting diode chip mounted in the reflection horn, and a wavelength conversion element that converts the wavelength of light emitted from the light emitting diode chip, and these are covered with a translucent material A sealed light emitting diode,
    In the reflective horn, at least one or more light emitting diode chips are arranged to be electrically connected,
    The wavelength conversion element includes a wavelength conversion substance and a translucent substance that holds the wavelength conversion substance, and is adjusted in advance to have a predetermined density and thickness, and is formed in a layer shape.
    An engagement claw is formed on the reflection horn, and the wavelength conversion element disposed on the upper portion of the substrate is fixed by the engagement claw so as to be in close contact with the light transmitting substrate of the light emitting diode chip. A light-emitting diode that is characterized.
  3. The wavelength conversion element has a wavelength conversion element layer containing a wavelength conversion substance at a relatively high density and a wavelength conversion element layer contained at a low density, and the high-density wavelength conversion element layer side is located on the LED chip side. The light-emitting diode according to claim 1, wherein the light-emitting diode is disposed so as to perform.
  4. In the wavelength conversion element, after the wavelength conversion material is mixed and dispersed in the dispersion medium resin, the wavelength conversion material flows into a mold and the wavelength conversion material is contained in a relatively high density due to the difference in specific gravity between the dispersion medium resin and the wavelength conversion material. 4. The light-emitting diode according to claim 3, wherein the light-emitting diode is a wavelength conversion element cured so as to have a wavelength conversion element layer and a wavelength conversion element layer included in a low density.
  5. The light emitting diode chip has two or more light emitting diode chips that radiate different light emission wavelengths in the reflection horn,
    The wavelength conversion element and the diffusion plate are sequentially laminated on the light emitting diode chip, and are fixed by engagement claws formed on the reflection horn. The light emitting diode as described.
  6. The light-emitting diode chip is formed by forming a light-emitting layer on a substrate that is transparent to the light emission wavelength, and forming an electrode on the same side as the light-emitting layer,
    The translucent substrate side is disposed on the reflection horn so that the translucent substrate side is on the upper side of the reflection horn, and the electrode on the bottom side of the reflection horn and the lead frame are electrically connected without using a wire. The light-emitting diode according to claim 2.
JP19147698A 1998-07-07 1998-07-07 Light emitting diode Expired - Fee Related JP4109756B2 (en)

Priority Applications (1)

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JP19147698A JP4109756B2 (en) 1998-07-07 1998-07-07 Light emitting diode

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Application Number Priority Date Filing Date Title
JP19147698A JP4109756B2 (en) 1998-07-07 1998-07-07 Light emitting diode

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JP2000022222A JP2000022222A (en) 2000-01-21
JP4109756B2 true JP4109756B2 (en) 2008-07-02

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KR100748815B1 (en) 2000-02-09 2007-08-13 니폰 라이츠 가부시키가이샤 Light source
JP2002076440A (en) * 2000-08-28 2002-03-15 Stanley Electric Co Ltd Light emitting device and free-space optical transmitter
JP4932078B2 (en) * 2000-12-04 2012-05-16 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP4925512B2 (en) * 2001-02-16 2012-04-25 スタンレー電気株式会社 Wavelength conversion type semiconductor device
JP2002246647A (en) * 2001-02-16 2002-08-30 Stanley Electric Co Ltd Wavelength conversion type semiconductor device
JP2005513815A (en) * 2001-12-29 2005-05-12 杭州富陽新穎電子有限公司 Light-emitting diodes and light-emitting diode lamp
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
DE10351349A1 (en) * 2003-10-31 2005-06-16 Osram Opto Semiconductors Gmbh Production of a luminescent diode chip applies a radiation decoupling surface and a semiconductor body with an epitaxial-grown sequence of semiconductor layers with an active zone
DE10351397A1 (en) * 2003-10-31 2005-06-16 Osram Opto Semiconductors Gmbh LED chip
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
JP4571139B2 (en) * 2004-08-10 2010-10-27 ルネサスエレクトロニクス株式会社 Light emitting device and method for manufacturing light emitting device
US8125137B2 (en) * 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7564180B2 (en) 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
US9412926B2 (en) 2005-06-10 2016-08-09 Cree, Inc. High power solid-state lamp
JP5196711B2 (en) * 2005-07-26 2013-05-15 京セラ株式会社 Light emitting device and lighting device using the same
KR101332139B1 (en) 2005-12-21 2013-11-21 크리, 인코포레이티드 Lighting device and lighting method
KR20090009772A (en) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. Lighting device
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
WO2007123938A2 (en) 2006-04-18 2007-11-01 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US8251538B2 (en) 2006-06-14 2012-08-28 Koninklijke Philips Electronics N.V. Lighting device
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
US9084328B2 (en) 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
US10030824B2 (en) 2007-05-08 2018-07-24 Cree, Inc. Lighting device and lighting method
JP5158472B2 (en) 2007-05-24 2013-03-06 スタンレー電気株式会社 Semiconductor light emitting device
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
DE102008005345A1 (en) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Semiconductor-based device, semiconductor device-based device receptacle, and method of making a semiconductor-based device
DE102009005907A1 (en) 2009-01-23 2010-07-29 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
WO2011037877A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device with low glare and high light level uniformity
US9234655B2 (en) 2011-02-07 2016-01-12 Cree, Inc. Lamp with remote LED light source and heat dissipating elements
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US9316361B2 (en) 2010-03-03 2016-04-19 Cree, Inc. LED lamp with remote phosphor and diffuser configuration
US10359151B2 (en) 2010-03-03 2019-07-23 Ideal Industries Lighting Llc Solid state lamp with thermal spreading elements and light directing optics
JP2013521647A (en) * 2010-03-03 2013-06-10 クリー インコーポレイテッドCree Inc. Radiators with improved color rendering index through phosphor separation
US9310030B2 (en) 2010-03-03 2016-04-12 Cree, Inc. Non-uniform diffuser to scatter light into uniform emission pattern
US9024517B2 (en) 2010-03-03 2015-05-05 Cree, Inc. LED lamp with remote phosphor and diffuser configuration utilizing red emitters
US9625105B2 (en) 2010-03-03 2017-04-18 Cree, Inc. LED lamp with active cooling element
US8931933B2 (en) 2010-03-03 2015-01-13 Cree, Inc. LED lamp with active cooling element
US10451251B2 (en) 2010-08-02 2019-10-22 Ideal Industries Lighting, LLC Solid state lamp with light directing optics and diffuser
US9062830B2 (en) 2010-03-03 2015-06-23 Cree, Inc. High efficiency solid state lamp and bulb
US8562161B2 (en) 2010-03-03 2013-10-22 Cree, Inc. LED based pedestal-type lighting structure
US9500325B2 (en) 2010-03-03 2016-11-22 Cree, Inc. LED lamp incorporating remote phosphor with heat dissipation features
US9057511B2 (en) 2010-03-03 2015-06-16 Cree, Inc. High efficiency solid state lamp and bulb
JP2013016588A (en) * 2011-07-01 2013-01-24 Citizen Electronics Co Ltd Led light-emitting device
JP2013077679A (en) * 2011-09-30 2013-04-25 Citizen Electronics Co Ltd Semiconductor light-emitting device and manufacturing method of the same
US9068701B2 (en) 2012-01-26 2015-06-30 Cree, Inc. Lamp structure with remote LED light source
CN103254889B (en) * 2012-02-16 2015-12-09 赛恩倍吉科技顾问(深圳)有限公司 Phosphor film production method and corresponding method of packaging a light emitting diode
US9488359B2 (en) 2012-03-26 2016-11-08 Cree, Inc. Passive phase change radiators for LED lamps and fixtures
DE102012107290A1 (en) 2012-08-08 2014-02-13 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device, conversion agent platelets and method of making a conversion agent platelet
CN104981915A (en) * 2013-02-06 2015-10-14 株式会社小糸制作所 Light-emitting module
JP5698808B2 (en) * 2013-07-26 2015-04-08 スタンレー電気株式会社 Semiconductor light emitting device
CN110010746A (en) * 2014-01-07 2019-07-12 亮锐控股有限公司 With phosphor converted device without glue luminescent device
US9360188B2 (en) 2014-02-20 2016-06-07 Cree, Inc. Remote phosphor element filled with transparent material and method for forming multisection optical elements
JP6176171B2 (en) * 2014-03-28 2017-08-09 豊田合成株式会社 Method for manufacturing light emitting device
JP5996037B2 (en) * 2015-05-12 2016-09-21 シチズン電子株式会社 LED light emitting device
JP6387954B2 (en) * 2015-12-24 2018-09-12 日亜化学工業株式会社 Method for manufacturing light emitting device using wavelength conversion member

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101878270B1 (en) * 2011-09-15 2018-07-13 엘지이노텍 주식회사 Lighting device comprising photoluminescent plate and photoluminescent tape

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