JP2002009349A - Surface emission led and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface emission LED in which emission efficiency and yield are enhanced, and its manufacturing method. SOLUTION: A plurality of LED chips 4 are mounted on a mother board 2 through a submount board 3 wherein the LED chip 4 has a pair of positive and negative electrodes 4a, 4b on the side facing the submount board 3 and the pair of electrodes 4a, 4b are connected with the submount board 3 through a pair of bumps 37a, 37b. Light is emitted from the surface each of the plurality of LED chips 4 not provided with the electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to an LED surface light-emitting device equipped with an ED (Light Emitting Diode) chip and a method of manufacturing the same, and in particular, to an LE for improving the luminous efficiency and the yield.
The present invention relates to a D-surface light emitting device and a method for manufacturing the same.

[0002]

2. Description of the Related Art As a conventional LED surface light emitting device, for example, there is one disclosed in Japanese Utility Model Laid-Open No. 5-81874.

FIG. 12 shows the LED surface light emitting device.
In this device, a large number of light emitting dots 101 formed on a substrate 103 are mounted on a wiring substrate 102 in a matrix. An LED chip 108 is provided at a predetermined position on the surface of the wiring board 102, and one electrode of the LED chip 108 and a wiring pattern 109 on the wiring board 102 are connected by bonding wires 110. Further, the other electrode of the LED chip 108 is connected to a wiring pattern 112 laid through the through hole 111 to the back surface. A conical hole 113 is formed in the substrate 103 so as to surround the LED chip 108. A transparent resin 114 is embedded in the conical hole 113 so as to form a concave lens.

In the above configuration, when the LED chip 108 is turned on by a drive circuit (not shown), the conical hole 113 is turned on.
Has a shape in which the cross-sectional area increases toward the surface.
Since the output light of the chip 108 is radially expanded and projected,
The output light of the LED chip 108 can be viewed not only from the front but also from an oblique direction.

[0005]

However, according to the conventional surface light emitting device, since the electrodes are provided on the upper surface, which is the light emitting surface of the LED chip, the electrodes and the bond wires become shadows, and their area is reduced. The light emitting area was reduced, and the light emitting efficiency was not sufficient. Further, in order to prevent in-plane light emission unevenness, LED chips having substantially the same light emission amount were incorporated into the device, and LED chips having a light emission amount outside a certain range were excluded, so that the yield was poor.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an LED surface light emitting device with improved luminous efficiency. Another object of the present invention is to provide an LED with an improved yield.
An object of the present invention is to provide a method for manufacturing a surface light emitting device.

[0007]

In order to achieve the above object, the present invention has a substrate and a pair of positive and negative electrodes on a surface facing the substrate, wherein the pair of electrodes comprises a pair of bonding bumps. And a plurality of LED chips electrically connected to the substrate via the substrate. According to the above configuration, light from the plurality of LED chips is emitted from the light emission surface where no electrode is provided.
The “pair of bonding bumps” is not limited to the case where one bump is used for each of the positive and negative poles, but the case where one bump is used for one pole and plural bumps are used for the other Each case includes a case where a plurality of bumps are used. The present invention achieves the above object by providing a plurality of LEs mounted on a substrate.
In the method for manufacturing an LED surface light emitting device having a D chip, the light emission amounts of a plurality of the LED chips are measured and classified into at least a first, a second, and a third group according to the degree of the light emission amount. There is provided a method for manufacturing an LED surface light emitting device, wherein the plurality of LED chips are selected from the three groups to constitute the plurality of LED chips such that the total light emission amount of the plurality of LED chips is within a predetermined range. According to the above configuration, it is possible to incorporate both a device with a large amount of emitted light and a device with a small amount of emitted light into the device.

[0008]

1 and 2 show a first embodiment of the present invention.
1 shows an LED surface emitting device according to an embodiment of the present invention, and FIG.
2A is a front view, FIG. 2B is a side view, FIG. 2C is a bottom view, FIG. 2A is an enlarged view of a portion A in FIG.
(B) is an enlarged view of a portion B in FIG. 1 (a), and FIG. 2 (c) is an LED.
It is a bottom view of a chip.

The LED surface light emitting device 1 has a mother board 2 having a wiring pattern formed on a front surface 2a and a back surface 2b.

FIG. 1 shows a front surface 2a of the mother substrate 2.
As shown in FIGS. 2A and 2B and FIG. 2, a plurality of LED chips 4 arranged in a row via a submount substrate 3 and a plurality of transparent resin sealing each LED chip 4. The light from the sealing member 5, the spacer 6 disposed on the surface 2a of the mother substrate 2, and the LED chip 4 is shown in FIG.
, A reflector 7 that reflects upward, a transparent plate 8 that protects the inside and transmits light from the LED chip 4, and a cover 9 that protects the entire device 1.

The back surface 2b of the mother substrate 2 has a structure shown in FIG.
As shown in (c), a plurality of resistance elements 10 constituting an LED drive circuit described later and one Zener diode 1
1 is provided. In FIG. 1, the left side 12A,
13A and the right side 12B, 13B are a plurality of LED chips 4
Connection terminals for applying a voltage to the left and right connection terminals 12 according to the wiring lead-out direction at the time of assembling the device 1.
A, 13A, 12B, and 13B are properly used.

As shown in FIG. 1A, a total of 48 LED chips 4 are arranged on the mother substrate 2 via the submount substrate 3, four in the vertical direction and 12 in the horizontal direction. I have. The LED chip 4 is mounted on the sub-mount substrate 3 by flip-chip bonding (FCB). The LED chip 4 has a structure in which a semiconductor layer such as gallium nitride is laminated on a sapphire substrate which is a transparent insulator, and as shown in FIG. 40b is formed,
The bottom surface of the sapphire substrate serving as the upper surface 4a of the chip 4 is a light emitting surface. In this embodiment, for example, GaN (gallium nitride) that emits ultraviolet light having a wavelength of 380 nm
Uses a system semiconductor.

The mother substrate 2 has a wiring pattern printed on the front surface 2a and the back surface 2b of the base material. The base material of the mother board 2 has heat resistance and a low coefficient of expansion so as not to cause deformation or decrease in strength when the submount board 3 is mounted, and further has a light emission wavelength (for example, ultraviolet light) of the LED chip 4. Materials having high light reflectance and low light absorption with respect to (wavelength) are preferable. As such a material, for example, a glass epoxy resin having a high light reflectance of about 42% with respect to ultraviolet rays can be used. Further, when a material having a high light reflectance of about 42% with respect to ultraviolet rays is used as the base material of the submount substrate 3 closer to the LED chip 4 than the mother substrate 2, the light reflectance is higher than that. A low glass epoxy resin of about 10 to 22% may be used. In addition, when importance is placed on heat dissipation and strength, metals such as aluminum and ceramics such as alumina can be used.

The sealing member 5 provides the light emitted from the LED chip 4 with a predetermined light distribution characteristic by sealing the LED chip 4 with a predetermined outer shape. Further, the sealing member 5 is preferably made of a transparent resin material having durability with respect to the emission wavelength of the LED chip 4. For example, silicone can be used for ultraviolet rays.

As shown in FIG. 2A, the spacer 6
A plurality of circular openings 6a are provided at positions where the plurality of LED chips 4 are arranged, and are made of, for example, an elastic member such as silicone rubber. Since the spacer 6 is sandwiched between the reflector 7 and the mother substrate 2 by the cover 9, the inside of the device 1 is sealed, and dust and moisture can be prevented inside the device 1. Further, with such a configuration, variations or errors in the thickness direction of each component such as the transparent plate 8 can be absorbed, and distortion or warpage of the entire apparatus 1 can be prevented or reduced. 8 and the cover 9 can be protected.

The reflector 7 has an opening 7a at a position corresponding to the LED chip 4, and the periphery of the opening 7a is shown in FIG.
As shown in (a), a cone-shaped reflecting surface 7b is formed. The reflector 7 preferably has sufficient weather resistance against humidity, heat, ultraviolet rays, and the like, and is preferably formed of a material having a high light reflectance with respect to the emission wavelength of the LED chip 4. In this embodiment, FIGS. 1A and 1B and FIG.
As shown in (a), a metal plate made of copper, stainless steel, or the like is drawn and the opening 7 is formed at a position corresponding to the LED chip 4.
The periphery of the opening 7a is formed with a cone-shaped reflection surface 7b, and the surface is subjected to a treatment having a high light reflectance, for example, a bright Ni plating. By providing such a reflector 7, the amount of light in the direction (forward direction) from the chip 4 to the transparent body 8 can be further improved. The reflector 7 may be formed by plating or depositing a metal on a resin. As a result, the weight can be reduced as compared with a metal object as a whole. Further, the reflector 7 may be formed by bonding a thin metal cover to a base such as a resin. Thus, the metal cover can be formed by a method such as drawing of a thin metal plate, so that the material cost and the processing cost are low, and the weight of the whole can be reduced as compared with a metal object.

The transparent plate 8 is preferably made of a material having a high transmittance with respect to the emission wavelength of the LED chip 4 (for example, the wavelength of ultraviolet rays). As such a material, for example, glass can be used.

The cover 9 is, as shown in FIG.
It has a plurality of openings 9 a having an elongated shape corresponding to one LED chip 4. The cover 9 is preferably formed from a material having weather resistance and mechanical strength. As such a material, for example, a metal plate such as a steel material or aluminum can be used.

As shown in FIGS. 1A and 1C, the resistance element 10 is disposed between the LED chips 4 on the back surface 2b of the mother board 2 so as to be evenly spaced from each LED chip 4. Have been. As a result, the heat generated by the resistance element 10 does not affect the reduction in output and the reduction in reliability of the LED chip 4, and high reliability is obtained. The resistance element 10 alleviates the current variation due to the VF difference of each LED chip 4 and limits the current to each LED chip 4.

FIG. 3 shows a mounting structure of the LED chip 4 by FCB. The submount substrate 3 has a base material 31, and a positive lead 32a and a negative lead 32b are formed on a surface 31a of the base material 31 as shown in FIG.
A positive lead 33a and a negative lead 33b are formed on the back surface 31b of the base material 31 as shown in FIG.
a positive lead 32a, negative lead 32b and back surface 31b
Are connected to the positive lead 33a and the negative lead 33b by through-hole plating 34a, 34b, respectively.
A positive display portion 35 for indicating that it is on the positive electrode side is formed to extend on the positive lead 32a of FIG. The leads 32a, 32b, 33a, 33b, and the positive display section 35 are formed by using an electrode wiring technique in a normal semiconductor manufacturing technique such as an etching method.
It is formed by laminating a metal plating layer such as Au on a base metal layer such as i. Also, the positive lead 32 on the surface 31a of the base material 31
a and a pair of position-recognition plating bumps 36a, 36b made of Au are formed on the diagonal line of the negative lead 32b.
A is applied to the positive lead 32a and the negative lead 32b on the surface 31a.
The mounting plating bumps 37a and 37b made of u are formed respectively. Prior to mounting the LED chip 4, the mounting plating bumps 37a and 37b are long ellipses, ellipses, etc. in a direction perpendicular to the ultrasonic vibration direction 16 at the time of bonding by ultrasonic waves, as shown in FIG. LE shape
After the D chip 4 is mounted, the D chip 4 has a circular shape as shown in FIG. These plated bumps 36a,
36b, 37a and 37b are formed collectively by, for example, photolithography. Mounting plating bump 37
By forming the shapes a and 37b as shown in FIG. 3C, it is possible to increase the bonding area and improve the bonding strength while preventing short circuit. The mounting plating bumps 37a and 37b may be stud bumps.

The base material 31 has heat resistance and a low coefficient of expansion so as not to cause deformation and a decrease in strength when the LED chip 4 is mounted, and further has a light emission wavelength of the LED chip 4 (for example, a wavelength of ultraviolet light). A material having a high light reflectance and a low light absorptance with respect to (1) is preferable. As such a material, for example, a glass epoxy resin having a high light reflectance of about 42% with respect to ultraviolet rays can be used. In addition, an insulator such as another resin or ceramic may be used according to required characteristics.

FIG. 4 shows a wiring pattern on the front surface 2 a of the mother substrate 2. The wiring pattern 20 is formed using an electrode wiring technique in a normal semiconductor manufacturing technique such as an etching method, and is formed by, for example, laminating a metal plating layer such as Au on a base metal layer such as Cu + Ni. At the position where the sub-mount substrate 3 is mounted, as shown in FIG.
A pair of connection regions 20a and 20b to which the positive lead 33a and the negative lead 33b on the back surface 31b of the submount substrate 3 are connected via a silver paste are formed.
In addition, as shown in FIG. 3C, a connection area for testing is provided at a plurality of places (three places in this embodiment) of the surface 2a of the mother board 2 other than where the submount board 3 is mounted. 20a and 20b are formed.

FIG. 5 shows an LED driving circuit. This LE
As shown in the drawing, the D drive circuit includes a connection terminal 12 connected to the anodes of the LED chips 4 and a plurality of LEs.
A plurality of Ls connected to the D chip 4 via the resistance element 10
It includes an ED chip 4, a connection terminal 13 connected to the cathodes of the plurality of LED chips 4, and a Zener diode 11 for preventing overvoltage. Note that the Zener diode 11 is not limited to this, and an avalanche diode or another diode can be used.

FIGS. 6 to 8 show a manufacturing method according to the first embodiment. First, the submount assembly board 3
0 is prepared (ST1). That is, FIG.
As shown in FIG. 7B and FIG. 7A, a positive lead 32a and a negative lead 32b are formed on the surface of the base material of the submount aggregate substrate 30, and a positive lead 33a and a negative lead 33b are formed on the back surface. The positive lead 32a and the negative lead 32b on the front surface and the positive lead 33a and the negative lead 33 on the rear surface
b are connected by through-hole platings 34a and 34b, respectively. Next, as shown in FIG.
4 is applied, and ultraviolet rays (HV) are irradiated from above the mask 15 having the holes 15a as shown in FIG. 3C, and holes 14a are formed in the resist 14 as shown in FIG. . Next, as shown in FIG. 3E, mounting plating bumps 37a and 37b are formed in the holes 14a of the resist 14. At this time, the position recognition plating bumps 36a,
36b is also formed. Next, the resist 14 is removed as shown in FIG. In this way, the lead 3 is
2a, 32b, 33a, 33b and plated bumps 36a,
The submount aggregate substrate 30 on which 36b, 37a, and 37b are formed is completed.

Next, the LED chip 4 as a flip chip is flip-chip bonded on the submount aggregate substrate 30, the LED chip 4 is sealed by the sealing member 5 (ST2), and each LED chip is inspected by a dedicated inspection device. A characteristic test such as the light amount of No. 4 is performed (ST3). At this time,
The defective LED chip 4 is marked. Next, the submount aggregate substrate 30 is divided for each LED chip 4 to produce a plurality of submount substrates 3 (ST4).

On the other hand, a mother substrate 2 on which a plurality of sub-mount substrates 3 are mounted is prepared (ST10). here,
The wiring pattern 20 is formed on the base material of the mother substrate 2.
Next, circuit components such as the resistance element 10 and the zener diode 11 are mounted on the mother substrate 2 (ST11).

Next, the plurality of submount substrates 3 manufactured in step ST4 are mounted on the mother substrate 2 manufactured in step ST11 (ST12). LED chip 4
The top is sealed with silicon (ST13). Mother board 2
Then, the LED surface light-emitting device 1 is assembled by incorporating the spacer 6, the reflector 7, the transparent plate 8 and the cover 9 (ST1).
4), end with inspection of the entire device 1 (ST15).

According to the first embodiment, since the FCB bare chip mounting is performed in the LED surface light emitting device using a large number of GaN-based LED chips, the luminous efficiency can be improved. In addition, mother board 2
And the submount substrate 3 includes an LED chip 4 to be mounted.
Because the material has high light reflectance and low light absorption for the emission wavelength of, the luminous efficiency is high,
Low power can be achieved. Also, since the Zener diode 11 is provided on the input side of the LED drive circuit, the GaN-based LE
Electrostatic breakdown due to the low electrostatic withstand voltage of the D chip 4 can be prevented. Further, the submount board 3 on which the LED chips 4 are FCB-mounted has a large number of LED chips 4 mounted on the multi-mount submount aggregate board 30 by FCB,
Since it is manufactured by dividing it, the cost can be reduced. In addition, by forming a large number of bumps at a high density on the submount collective substrate 30 at a time, the plating bump process can be shortened, so that the manufacturing cost of the submount substrate 3 can also be reduced. Further, since the FCB mounting of the LED chip 4 to which other stress such as pressure is applied in addition to the heating is performed on the sub-mount substrate 3, the components to be mounted on the mother substrate 2 and the material of the mother substrate 2 can be freely selected. The degree increases. In addition, by unifying the size of the submount assembly substrate 30, a high-precision jig for FCB mounting can be unified. Further, since the sub-mount substrate 3 is mounted on the mother substrate 2, a general-purpose handling machine can be used, and handling becomes easy. After the light amount test, the LED chip 4 is mounted on the motherboard 2 by FCB.
Since the mounted sub-mount substrate 3 can be mounted, it is easy to sort by itself in advance. Therefore, it becomes possible to sort and mount the surface light emitting device 1 in order to alleviate the unevenness in the light amount, and the repair becomes unnecessary. In addition, since the sealing member 5 is molded after mounting the submount substrate 3 on which the LED chip 4 is mounted on the mother substrate 2 by FCB, it is possible to determine the shape of the sealing member 5 after mounting. Because
The shape selectivity is expanded, and desired light distribution characteristics are easily realized. Further, since the entire surface light emitting device 1 is protected by the cover 9, reliability and mechanical strength can be ensured.

FIG. 9 shows a main part of an LED surface light emitting device according to a second embodiment of the present invention. In the second embodiment, the LED chip 4 is directly
The configuration is implemented by CB, and the other configuration is the same as that of the first embodiment.

FIG. 10 shows the LED chips 4 on the mother board 2.
The details of the mounting position of are shown. A pair of connection regions 20a and 20b of the wiring pattern are formed on the surface of the mother substrate 2, and the pair of connection regions 20a and 20b are
The mounting plating bumps 21a and 21b for mounting the D chip 4, and the mounting plating bumps 22a and 22
22b together with the position recognition plating bumps 23a, 23
b, and position-recognition plated bumps 24a and 24b for repair / correction thereof. The mounting plating bumps 22a and 22b for repair / repair and the position recognition plating bumps 24a and 24b can be used for repair when mounting failure occurs during FCB.

FIG. 11 shows a manufacturing process according to the second embodiment. A mother board 2 on which a plurality of LED chips 4 are mounted is prepared (ST10). Here, the wiring pattern 20 and the plated bumps 2 are printed on the base material of the mother substrate 2 by printing.
1a, 21b, 22a, 22b, 23a, 23b, 24
a, 24b are formed. Next, circuit components such as the resistance element 10 and the zener diode 11 are mounted on the mother substrate 2 (ST11). Next, the LED chip 4 is mounted on the mother substrate 2 by flip chip bonding (S
T12). The LED chip 4 is sealed with the sealing member 5 (ST13). The LED surface light-emitting device 1 is assembled by incorporating the spacer 6, the reflector 7, the transparent plate 8 and the cover 9 into the mother substrate 2 (ST14), and the inspection of the entire device 1 is completed (ST15).

According to the second embodiment, the luminous efficiency can be improved as in the first embodiment. In addition, since a submount substrate is not required, the configuration can be simplified.

In the first and second embodiments, the case where the LED chips are turned on simultaneously has been described. However, a plurality of LED chips are arranged in a matrix on a mother board via a submount board. A plurality of LED chips may be selectively turned on according to a lighting signal such as an image signal. Alternatively, the substrate 103 having the conical hole 113 may be arranged on the mother substrate as shown in FIG. 12, and the transparent resin 114 may be embedded in the conical hole 113 so as to form a concave lens. Thus, the output light of the LED chip is radially expanded and projected, so that the output light of the LED chip can be viewed not only from the front but also from an oblique direction.

Next, L according to the third embodiment of the present invention will be described.
A method for manufacturing the ED surface light emitting device will be described. This third
In the first embodiment, in the characteristic inspection of step ST3 shown in FIG. 8, in the first embodiment, the LED chips are divided into a plurality of groups according to the amount of light emission, for example, large light amount, medium light amount, and small light amount. The LED chips mounted on the motherboard are configured from the above three groups so that the total light emission amount is within a predetermined range in mounting the submount substrate in step ST12 shown in FIG. Things. As a result, the yield is improved, and L
It is possible to make the total light emission amount uniform between the ED surface light emitting devices. In addition, it is applied to applications in which the total light emission amount between devices is required to be uniform, for example, display devices for various warnings of traffic signal lights and railway signal lights, light sources for illumination, and light sources for promoting the reaction of photocatalysts. can do.

[0035]

As described above, according to the LED surface light emitting device of the present invention, light from a plurality of LED chips is emitted from the light emitting surface on which no electrode is provided, so that the luminous efficiency is improved. Can be planned. According to the method for manufacturing an LED surface light emitting device of the present invention, the light emitting device is classified into at least first, second, and third groups according to the amount of light emission,
By configuring a plurality of LED chips by selecting from three groups so that the total light emission amount of the plurality of LED chips is within a predetermined range, the yield can be improved.

[Brief description of the drawings]

1A and 1B show an LED surface light emitting device according to a first embodiment of the present invention, wherein FIG. 1A is a front view, FIG. 1B is a side view, and FIG.
Is a bottom view.

2A is an enlarged view of a portion A in FIG. 1A, FIG. 2B is an enlarged view of a portion B in FIG. 1A, and FIG. 2C is a bottom view of the LED chip.

FIG. 3 shows an FCB structure according to the first embodiment, in which (a)
Is a front view of the submount substrate on which the LED chip is mounted, (b) is a cross-sectional view, (c) and (d) are diagrams showing the shapes of the LED chip mounting bumps, and (e) is a back view of the submount substrate. It is.

4A is a front view of a mother substrate, and FIG. 4B is a view of FIG.
(C) is an enlarged view of an E portion of (a).

FIG. 5 is a diagram showing an LED drive circuit according to the first embodiment;

FIGS. 6A and 6B are diagrams showing a manufacturing process of the submount substrate according to the first embodiment.

FIGS. 7A to 7F are diagrams illustrating a process of manufacturing the submount substrate according to the first embodiment;

FIG. 8 is a diagram illustrating a manufacturing process of the LED surface light-emitting device according to the first embodiment.

FIG. 9 is a sectional view of a main part of an LED surface light emitting device according to a second embodiment of the present invention.

FIG. 10 is a diagram illustrating an LED chip mounting position of the mother board according to the first embodiment.

FIG. 11 is a diagram illustrating a manufacturing process of the LED surface light-emitting device according to the first embodiment.

FIG. 12 is a sectional view showing a conventional LED surface light emitting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 LED surface light-emitting device 2 Mother board 2a Front surface 2b Back surface 3 Submount board 4 LED chip 4a Positive electrode 4b Negative electrode 5 Sealing member 6 Spacer 6a Opening 7 Reflector 7a Opening 7b Reflective surface 8 Transparent plate 9 Cover 9a Opening 10 Resistance element 11 Zener diode 12A, 12B, 13A, 13B Connection terminal 14 Resist 14a Hole 15 Mask 15a Hole 20 Wiring pattern 20a, 20b Connection area 21a, 21b, 22a, 22b Mounting plating bumps 23a, 23b, 24a, 24b Position recognition plating Bump 30 Multi-substrate submount assembly board 31a Front surface 31b Back surface 32a Positive lead 32b Negative lead 33a Positive lead 33b Negative lead 34a, 34b Through-hole plating 35 Positive display part 36a, 36b Position recognition message Bumps 37a, 37b for mounting plated bump 40a positive electrode 40b negative electrode 101 luminous dots 102 wiring board 103 substrate 108 LED chip 109 wiring pattern 110 bonding wire 111 through hole 112 wiring pattern 113 conical hole 114 a transparent resin

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 25/18 H01L 25/04 Z // F21Y 101: 02 (72) Inventor Seiki Sejima Higashi Oizumi 4 Nerima-ku, Tokyo No. 26-11, Konamiuchi Co., Ltd. (72) Inventor Hiroshi Mimizo 4-26-11, Higashi-Oizumi, Nerima-ku, Tokyo (72) Inventor Toshinori Kuroyama 1 No. Toyoda Gosei Co., Ltd. (72) Inventor Takuya Ishida 4-4-1, Ikeda-cho, Yokosuka City, Kanagawa Prefecture Inside Kanto Kasei Kogyo Co., Ltd. Kanto Kasei Kogyo Co., Ltd. (72) Inventor Yusuke Kikukawa 4-4-1, Ikeda-cho, Yokosuka City, Kanagawa Prefecture F-term in Kanto Kasei Kogyo Co., Ltd. 5F041 AA03 AA41 BB04 BB22 BB31 CB22 DA09 DA41 DA61 DA78 EE23 FF06 5F044 KK01 KK17 LL00 RR00 RR01 RR17 RR18

Claims (25)

[Claims] 1. A plurality of LED chips having a substrate and a pair of positive and negative electrodes on a surface facing the substrate, wherein the pair of electrodes are electrically connected to the substrate via a pair of bonding bumps. An LED surface light-emitting device comprising: 2. The substrate according to claim 1, wherein said substrate has a wiring pattern on an insulating base material, and said pair of bonding pumps are respectively formed at a plurality of positions of said wiring pattern where said plurality of LED chips are connected. The LED surface light emitting device according to claim 1. 3. The LED surface light emitting device according to claim 2, wherein the substrate has a configuration in which a pair of spare or two or more pairs of bumps are formed at the plurality of positions of the wiring pattern. 4. The substrate according to claim 2, wherein bumps for automatic recognition having a predetermined positional relationship with respect to said pair of bonding bumps are formed at said plurality of positions of said wiring pattern. LED surface light emitting device. 5. The base material constituting the substrate, wherein the plurality of L
3. The light emitting diode according to claim 2, wherein the light emitting device is formed of a material having a high light reflectance of 30% or more with respect to the emission wavelength of the ED chip.
ED surface light emitting device. 6. The wiring pattern of the substrate, wherein the wiring pattern is
3. A structure including a dummy wiring pattern and a dummy bonding bump for the purpose of testing the bonding strength of the D chip.
The LED surface light-emitting device as described in the above. 7. A mother board having a wiring pattern, a pair of positive and negative back leads connected to the wiring pattern of the mother board on a back surface, and a pair of metal connection portions on the front surface with the pair of back leads. And a plurality of submount substrates having a pair of positive and negative front leads to which the pair of electrodes of the plurality of LED chips are connected via the pair of bonding bumps. The LED surface light-emitting device as described in the above. 8. A base material constituting said mother substrate and said plurality of sub-mount substrates is formed of a material having a high light reflectance of 30% or more with respect to the emission wavelength of said plurality of LED chips. The LED surface light emitting device according to claim 7. 9. The base material forming the mother substrate is formed of a material having a predetermined light reflectance with respect to the emission wavelength of the plurality of LED chips, and the base material forming the submount substrate is Multiple L
The LED surface light emitting device according to claim 7, wherein the LED surface light emitting device is formed of a material having a light reflectance higher than the predetermined light reflectance with respect to an emission wavelength of the ED chip. 10. The wiring pattern of the mother substrate,
8. The LED surface light emitting device according to claim 7, wherein the LED surface light emitting device has a configuration including a dummy wiring pattern for the purpose of inspecting a bonding strength or the like of the LED chip and the submount substrate. 11. The wiring pattern of the mother substrate,
8. The LED surface light emitting device according to claim 7, comprising a wiring pattern portion for automatic recognition having a predetermined positional relationship with a mounting position of the submount substrate. 12. The single LED having a plurality of LED chips having a plurality of reflective surfaces around the LED chips extending from the surface facing the substrate to a surface opposite to the surface. The LED surface light emitting device according to claim 1, comprising a body. 13. The LED surface light emitting device according to claim 12, wherein said plurality of reflection surfaces are sealed inside by a plurality of sealing members made of a transparent resin. 14. A structure in which the plurality of LED chips are sealed by a plurality of sealing members made of a transparent resin that imparts a predetermined light distribution characteristic to light emitted by the LED chips according to a predetermined external shape. 2. The LED surface light emitting device according to 1. 15. The LED according to claim 1, wherein the pair of bonding bumps has an elliptical shape or an oval shape that is long in a direction perpendicular to a direction in which the pair of bonding bumps are arranged.
Surface emitting device. 16. The LE according to claim 1, wherein the pair of bonding bumps have an elliptical shape or an elliptical shape that is long in a direction perpendicular to the ultrasonic vibration direction at the time of bonding by ultrasonic vibration.
D surface light emitting device. 17. The L according to claim 1, wherein said plurality of LED chips are driven by a drive circuit having a plurality of resistance elements for controlling a current to said plurality of LED chips.
ED surface light emitting device. 18. The structure according to claim 17, wherein said plurality of resistance elements are provided on a surface of said substrate opposite to a surface on which said plurality of LED chips are provided, and are provided between said plurality of LED chips. The LED surface light-emitting device as described in the above. 19. The LED surface light emitting device according to claim 1, wherein said plurality of LED chips are protected by a common protection element for preventing overvoltage. 20. The LED surface light emitting device according to claim 1, wherein said plurality of LED chips are simultaneously turned on. 21. The LED surface light emitting device according to claim 1, wherein the plurality of LED chips are arranged in a matrix on the substrate, and are selectively lit based on a lighting signal. 22. A substrate, a plurality of LED chips having a pair of positive and negative electrodes on a surface side facing the substrate, wherein the pair of electrodes are electrically connected to the substrate via a pair of bumps; A plurality of sealing members made of a transparent resin for sealing the plurality of LED chips and imparting a predetermined light distribution characteristic to light emitted by the LED chips according to a predetermined outer shape; and the plurality of LED chips on the substrate. A transparent body disposed on the side provided with, a spacer made of an elastic member provided between the substrate and the transparent body, a spacer provided to cover the plurality of LED chips, the transparent body and the spacer. And a cover that forms a sealed structure together with the transparent body and the spacer. 23. The LED surface according to claim 22, wherein said plurality of LED chips are LED chips which emit ultraviolet light, said plurality of sealing members are made of silicone, and said transparent body is made of glass. Light emitting device. 24. A mother board having a wiring pattern, a pair of positive and negative back leads connected to the wiring pattern on the back side of the mother board, and a pair of metal connecting portions connected to the pair of back leads on the front side. A plurality of submount substrates having a pair of positive and negative front leads, and a pair of positive and negative electrodes on a surface side facing the submount substrate, wherein the pair of electrodes is a pair of the submount substrates via a pair of bumps. A plurality of LED chips connected to the front lead, and a plurality of transparent resins that seal the plurality of LED chips and impart predetermined light distribution characteristics to light emitted by the LED chips according to a predetermined external shape. A sealing member; and the plurality of LEs sealed by the plurality of sealing members.
A single reflector having a plurality of reflection surfaces extending around the D chip from the surface facing the substrate toward a surface opposite to the surface; and the plurality of LED chips of the plurality of submount substrates A transparent body disposed on the side provided with, a spacer made of an elastic member provided between the substrate and the transparent body, the plurality of LED chips, the single reflector, the transparent body, An LED surface light emitting device, comprising: a cover provided to cover the spacer; and a cover forming a sealed structure together with the transparent body and the elastic member. 25. A method of manufacturing an LED surface light emitting device having a plurality of LED chips mounted on a substrate, comprising: measuring a light emission amount of the plurality of LED chips; And a third group. The plurality of LED chips are selected from the three groups so that the total light emission amount of the plurality of LED chips is within a predetermined range.
A method for manufacturing an LED surface light emitting device, comprising an ED chip.