JPH10308535A - Surface mounting-type light-emitting diode and its manufacture - Google Patents

Surface mounting-type light-emitting diode and its manufacture

Info

Publication number
JPH10308535A
JPH10308535A JP11481997A JP11481997A JPH10308535A JP H10308535 A JPH10308535 A JP H10308535A JP 11481997 A JP11481997 A JP 11481997A JP 11481997 A JP11481997 A JP 11481997A JP H10308535 A JPH10308535 A JP H10308535A
Authority
JP
Japan
Prior art keywords
emitting diode
light
light emitting
electrode pattern
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11481997A
Other languages
Japanese (ja)
Inventor
Takeshi Miura
剛 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP11481997A priority Critical patent/JPH10308535A/en
Publication of JPH10308535A publication Critical patent/JPH10308535A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a surface mounting-type light-emitting diode which can obtain high-output emitted light, by increasing the condensing property of light radiated from a light-emitting diode element. SOLUTION: A recessed part 22 whose inner wall faces 26 are tilted to the outside is formed on a side-bonded electrode pattern 27 which is formed on the surface of a substrate 21, a light-emitting diode element 23 is arranged inside the recessed part 2, and its upper part is sealed with a hemispherical translucent resin body 24. As a result, light which is radiated from the light- emitting diode element 23 is reflected by the inner wall faces 26 in the recessed part 22 so as to be directed upward, its reflected light is condensed by the lens-shaped translucent resin body 24, and emitted light whose optical output is intense is obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、マザーボードの表
面に直接実装される表面実装型発光ダイオード及びその
製造方法に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a surface mount type light emitting diode directly mounted on a surface of a motherboard and a method of manufacturing the same.

【０００２】[0002]

【従来の技術】従来、この種の表面実装型発光ダイオー
ドとしては、例えば図１１及び図１２に示したタイプの
ものと、図１３及び図１４に示したタイプのものが知ら
れている。いずれのタイプも基板１の上面にダイボンド
電極パターン２とセカンド電極パターン３とを設け、ダ
イボンド電極パターン２の上に導電性接着剤４によって
発光ダイオード素子５を固着すると共に、発光ダイオー
ド素子５と前記セカンド電極パターン３とをボンディン
グワイヤ６によって接続し、発光ダイオード素子５及び
ボンディングワイヤ６を透光性樹脂体７によって封止し
た構造のものである。そして、前者の場合は平らな基板
１の上面に発光ダイオード素子５を固着し、その基板１
の上面を六面体の透光性樹脂体７によって封止したのに
対して、後者の場合は基板１の上面に、内壁面が外側に
傾斜した凹部８を設け、この凹部８内にまで延ばしたダ
イボンド電極パターン２上で発光ダイオード素子５を固
着し、周囲と同一平面となるよう凹部８内に透光性樹脂
体７を充填した構造のものとなっていた。2. Description of the Related Art Conventionally, as this type of surface mount type light emitting diode, for example, the type shown in FIGS. 11 and 12 and the type shown in FIGS. 13 and 14 are known. In each case, a die bond electrode pattern 2 and a second electrode pattern 3 are provided on the upper surface of the substrate 1, and the light emitting diode element 5 is fixed on the die bond electrode pattern 2 by a conductive adhesive 4. The second electrode pattern 3 is connected with the bonding wire 6, and the light emitting diode element 5 and the bonding wire 6 are sealed with the translucent resin body 7. In the former case, the light emitting diode element 5 is fixed on the upper surface of the flat substrate 1, and the substrate 1
Is sealed with a hexahedral translucent resin body 7, whereas in the latter case, a recess 8 whose inner wall surface is inclined outward is provided on the upper surface of the substrate 1 and extends into the recess 8. The light emitting diode element 5 is fixed on the die bond electrode pattern 2 and the transparent resin body 7 is filled in the concave portion 8 so as to be flush with the periphery.

【０００３】[0003]

【発明が解決しようとする課題】ところで、上記従来の
表面実装型発光ダイオードにあっては、前者の場合は発
光ダイオード素子５から側面方向に出た光９が透光性樹
脂体７を透過して周囲に拡散してしまうため上方向に集
光できず、所定の光出力が得られないといった問題があ
った。一方、後者の場合は発光ダイオード素子５から側
面方向に出た光は、凹部８の内壁面に反射されて上方向
に向かうが、集光されずにそのまま平行光１０として発
光するために、光出力が必ずしも十分といえるものでは
なかった。By the way, in the above-mentioned conventional surface mount type light emitting diode, in the former case, the light 9 emitted from the light emitting diode element 5 in the lateral direction passes through the translucent resin body 7. Therefore, there is a problem that the light cannot be condensed upward and a predetermined light output cannot be obtained. On the other hand, in the latter case, the light emitted from the light emitting diode element 5 in the lateral direction is reflected by the inner wall surface of the concave portion 8 and travels upward, but is emitted as parallel light 10 without being collected. The output was not always sufficient.

【０００４】一方、集光性を重視した発光ダイオードと
して、従来から図１５に示したようなリードフレーム型
の発光ダイオード１１が知られている。この種の発光ダ
イオード１１は、一方のリードフレーム１２ａの頂部に
凹部１３を設け、この凹部１３に発光ダイオード素子１
４を載せて固着すると共に、この発光ダイオード素子１
４と他方のリードフレーム１２ｂの頂部をボンディング
ワイヤ１５によって接続したものの周囲を、透光性樹脂
体１６によって封止した構造のものである。On the other hand, a lead frame type light emitting diode 11 as shown in FIG. 15 has been conventionally known as a light emitting diode which emphasizes the light collecting property. In this type of light emitting diode 11, a concave portion 13 is provided at the top of one lead frame 12a.
4 and fix the light emitting diode element 1
4 and a structure in which the top of the other lead frame 12b is connected by a bonding wire 15 and the periphery thereof is sealed with a translucent resin body 16.

【０００５】しかしながら、上記発光ダイオード１１
は、リードフレーム１２ａの頂部に設けた凹部１３によ
って、発光ダイオード素子１４から出た光を効果的に上
方向へ導き出すと共に、透光性樹脂体１６の頂部が半球
形状に形成されていることから集光作用も前述のものよ
り期待できるが、この種のリードフレーム型の発光ダイ
オード１１は、マザーボード上に表面実装することがで
きず、大型化してしまうといった問題があった。However, the light emitting diode 11
This is because the light emitted from the light emitting diode element 14 is effectively guided upward by the concave portion 13 provided at the top of the lead frame 12a, and the top of the translucent resin body 16 is formed in a hemispherical shape. Although the light condensing function can be expected to be higher than that described above, there is a problem that this kind of lead frame type light emitting diode 11 cannot be surface-mounted on a motherboard and becomes large.

【０００６】そこで本発明は、表面実装型の発光ダイオ
ードにおいて、発光ダイオード素子から出た光の集光性
を高めることで、大きな光出力を得ることを目的とす
る。Accordingly, an object of the present invention is to obtain a large light output by improving the light-collecting property of light emitted from a light-emitting diode element in a surface-mounted light-emitting diode.

【０００７】[0007]

【課題を解決するための手段】すなわち、上記課題を解
決するために、本発明に係る表面実装型発光ダイオード
の特徴は、基板の上面に形成されたダイボンド電極パタ
ーン上に内壁面が外側へ傾斜した凹部を設け、この凹部
内に発光ダイオード素子を配置すると共に、その上方を
半球形状の透光性樹脂体で封止したことにある。That is, in order to solve the above problems, a feature of the surface mount type light emitting diode according to the present invention is that an inner wall surface is inclined outward on a die bond electrode pattern formed on an upper surface of a substrate. The present invention is characterized in that a light-emitting diode element is arranged in this concave part, and the upper part thereof is sealed with a hemispherical transparent resin body.

【０００８】また、本発明に係る表面実装型発光ダイオ
ードの製造方法の特徴は、集合基板の上面に、各基板毎
に凹部を形成する凹部形成工程と、前記凹部が形成され
た集合基板上にダイボンド電極パターンとセカンド電極
パターンを形成する電極パターン形成工程と、前記各基
板毎に形成された凹部内で、ダイボンド電極パターン上
に発光ダイオード素子を固着するダイボンド工程と、前
記発光ダイオード素子とセカンド電極パターンとをボン
ディングワイヤで接続するワイヤボンド工程と、上記集
合基板の上面全面にキャスティング又はトランスファモ
ールドによって熱硬化性の透光性樹脂体を成形して発光
ダイオード素子やボンディングワイヤを封止する樹脂封
止工程と、上記集合基板を各基板毎にカットして一つ一
つの表面実装型発光ダイオードに分割する分割工程とを
備えたことにある。[0008] A feature of the method of manufacturing a surface mount type light emitting diode according to the present invention is that a concave portion forming step of forming a concave portion for each substrate on the upper surface of the collective substrate, and a method of forming the concave portion on the collective substrate having the concave portion formed thereon. An electrode pattern forming step of forming a die bond electrode pattern and a second electrode pattern, a die bonding step of fixing a light emitting diode element on the die bond electrode pattern in a concave portion formed for each of the substrates, and the light emitting diode element and a second electrode A wire bonding step of connecting the pattern with bonding wires, and a resin sealing for molding a thermosetting translucent resin body by casting or transfer molding over the entire upper surface of the collective substrate to seal the light emitting diode elements and the bonding wires. Stopping process, and cutting the above-mentioned collective board for each board, In that a dividing step of dividing the diode.

【０００９】[0009]

【発明の実施の形態】以下、添付図面に基づいて本発明
に係る表面実装型発光ダイオードの実施例を詳細に説明
する。図１及び図２は、本発明に係る表面実装型発光ダ
イオードの第１実施例を示したものである。この実施例
ではガラスエポキシなどからなる基板２１の上面両側に
ダイボンド電極パターン２７とセカンド電極パターン２
８が対向して形成されている。そして、ダイボンド電極
パターン２７の先端部分は基板２１の上面略中央まで延
び、該先端部分に基板２１へ凹むダイボンド電極パター
ン２７の凹部２２が形成されている。この凹部２２は、
中央が低く上側が方形状に開いた形状をしており、略正
方形の底面２５の各辺からは外側に傾斜する四つの内壁
面２６が立ち上がっている。底面２５及び内壁面２６
は、ともにダイボンド電極パターン２７の一部で構成さ
れており、特に内壁面２６は、光の反射率を上げるため
に平滑に仕上げて金メッキ等の表面処理で光沢を出して
いる。なお、前記内壁面２６の傾斜角度は、基板２１の
上面に対して４５°、もしくはそれよりやや小さい角度
が望ましい。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a surface mount type light emitting diode according to the present invention. FIG. 1 and FIG. 2 show a first embodiment of a surface mount type light emitting diode according to the present invention. In this embodiment, a die bond electrode pattern 27 and a second electrode pattern 2 are formed on both sides of the upper surface of a substrate 21 made of glass epoxy or the like.
8 are formed facing each other. The tip portion of the die bond electrode pattern 27 extends to approximately the center of the upper surface of the substrate 21, and the recess portion 22 of the die bond electrode pattern 27 recessed into the substrate 21 is formed at the tip portion. This recess 22
It has a shape in which the center is low and the upper side is open in a square shape, and four inner wall surfaces 26 which are inclined outward from each side of the substantially square bottom surface 25 rise. Bottom surface 25 and inner wall surface 26
Are both formed by a part of the die bond electrode pattern 27. In particular, the inner wall surface 26 is smoothed to increase the light reflectance, and is made glossy by surface treatment such as gold plating. The inclination angle of the inner wall surface 26 is desirably 45 ° with respect to the upper surface of the substrate 21 or an angle slightly smaller than 45 °.

【００１０】上記凹部２２の底面２５の略中央には発光
ダイオード素子２３が配置され、導電性接着剤２９によ
って固着されている。したがって、発光ダイオード素子
２３から側面方向に出た光３０ａは、凹部２２の各内壁
面２６に反射したのち上方向の光３０ｂとして進む。内
壁面２６は四面全体にダイボンド電極パターン２７が形
成されるので全面で光を反射することができる他、ダイ
ボンド電極パターン２７の表面が金メッキされて平面鏡
となっているため、発光ダイオード素子２３から側面方
向に出た光を効率よく上方向に反射することができる。A light emitting diode element 23 is disposed at substantially the center of the bottom surface 25 of the concave portion 22 and is fixed by a conductive adhesive 29. Therefore, the light 30a emitted from the light emitting diode element 23 in the side direction is reflected on each inner wall surface 26 of the concave portion 22, and then travels as the upward light 30b. The inner wall surface 26 has a die bond electrode pattern 27 formed on all four sides, so that light can be reflected on the entire surface. In addition, since the surface of the die bond electrode pattern 27 is gold-plated to form a plane mirror, the side surface from the light emitting diode element 23 Light emitted in the direction can be efficiently reflected upward.

【００１１】上記発光ダイオード素子２３とセカンド電
極パターン２８とはボンディングワイヤ３１によって接
続されている。そして、これら発光ダイオード素子２３
及びボンディングワイヤ３１の上方を半球形状の透光性
樹脂体２４で封止している。なお、ダイボンド電極パタ
ーン２７とセカンド電極パターン２８は、共に基板２１
の側面を回り込むようにして基板２１の裏面側まで延び
ている。The light emitting diode element 23 and the second electrode pattern 28 are connected by a bonding wire 31. And these light emitting diode elements 23
The upper part of the bonding wire 31 is sealed with a hemispherical transparent resin body 24. Note that both the die bond electrode pattern 27 and the second electrode pattern 28
Extends to the back side of the substrate 21 so as to go around the side surface of the substrate 21.

【００１２】上記透光性樹脂体２４は、基板２１の上面
に半球形状に突出された透明の樹脂体であって凸レンズ
として作用し、発光ダイオード素子２３から発して凹部
２２の内壁面２６に反射して上方向に向かう光３０ｂを
集光する。透光性樹脂体２４は、キャスティングやポッ
ティングあるいはトランスファモールドなどによって成
形され、頂部が発光ダイオード素子２３の真上に位置す
る。なお、透光性樹脂体２４の曲率半径は集光が得られ
れば特に制限を受けず、長円の一部で構成することも可
能である。また、樹脂の屈折率も集光が得られれば特に
限定されるものではない。The translucent resin body 24 is a transparent resin body protruding in a hemispherical shape on the upper surface of the substrate 21, acts as a convex lens, and is emitted from the light emitting diode element 23 and reflected on the inner wall surface 26 of the recess 22. Then, the light 30b heading upward is collected. The translucent resin body 24 is formed by casting, potting, transfer molding, or the like, and the top is located directly above the light emitting diode element 23. The radius of curvature of the translucent resin body 24 is not particularly limited as long as light can be collected, and may be formed by a part of an ellipse. Further, the refractive index of the resin is not particularly limited as long as light can be collected.

【００１３】このような構成からなる表面実装型発光ダ
イオードにあっては、発光ダイオード素子２３から側面
方向に出た光３０ａは、凹部２２の内壁面２６に反射し
て上方に向かう光３０ｂとなり、更に透光性樹脂体２４
を通過する際に集光されるために、上面方向への光出力
が強いものとなって明るい発光が得られる。In the surface-mounted light-emitting diode having such a configuration, the light 30a emitted from the light-emitting diode element 23 in the lateral direction is reflected on the inner wall surface 26 of the concave portion 22 to become light 30b heading upward. Further, the translucent resin body 24
Since the light is condensed when passing through, the light output in the upper surface direction becomes strong, and bright light emission is obtained.

【００１４】図３は、上記構成からなる表面実装型発光
ダイオードをマザーボード３２の上面に実装した時の断
面図である。マザーボード３２の表面に形成されている
左右の電極パターン３３ａ，３３ｂ上に表面実装型発光
ダイオードを上向きに載置し、ダイボンド電極パターン
２７、セカンド電極パターン２８をマザーボード３２の
各電極パターン３３ａ，３３ｂに半田３４によって接合
する。このようにしてマザーボード３２に実装された表
面実装型発光ダイオードは、垂直方向に指向性がある明
るい光を発することができる。なお、上面実装に限らず
マザーボード３２に側面実装することもでき、この場合
には水平方向に指向性のある光が発せられる。FIG. 3 is a cross-sectional view when the surface-mounted light emitting diode having the above configuration is mounted on the upper surface of the motherboard 32. The surface-mount type light emitting diode is placed upward on the left and right electrode patterns 33a and 33b formed on the surface of the motherboard 32, and the die bond electrode pattern 27 and the second electrode pattern 28 are attached to the respective electrode patterns 33a and 33b of the motherboard 32. It is joined by solder 34. The surface-mounted light emitting diode mounted on the motherboard 32 in this manner can emit bright light having directivity in the vertical direction. It should be noted that not only the upper surface mounting but also the side mounting on the motherboard 32 is possible, and in this case, light having directivity in the horizontal direction is emitted.

【００１５】図４乃至図８は、上記構成からなる表面実
装型発光ダイオードの一製造方法を示したものである。
まず、最初の工程では図４に示すように、基板２１毎に
ダイシングライン３５が想定される集合基板３６の上面
に、長孔スルーホール３７と凹部２２を設ける。この凹
部２２は、型を用いて基板２１自体を成形するのと同時
に形成するか、もしくは基板２１毎にテーパ付きのエン
ドミルを用いてザグリ穴加工して形成するなどの方法が
ある。次の工程では、図５に示すように集合基板３６の
上面にダイボンド電極パターン２７とセカンド電極パタ
ーン２８とを連続して形成する。このとき、凹部２２内
のダイボンド電極パターン２７も同時に形成される。こ
れら電極パターンの形成手段としては、例えば無電解銅
メッキを集合基板３６の全面に施し、マスクを使った露
光処理後、エッチング処理やレジスト剥離を行うことに
より、所定形状の電極パターンに形成される。その後、
銅箔にニッケル、金を電解メッキし、電極パターンが完
成する。次の工程では、図６に示すように、凹部２２の
略中央に発光ダイオード素子２３を載置して、ダイボン
ド電極パターン２７に導電性接着材２９を介してダイボ
ンドし、集合基板３６をキュア炉に入れ、発光ダイオー
ド素子２３をダイボンド電極パターン２７上に固着す
る。次の工程では、図７に示すように、発光ダイオード
素子２３とセカンド電極パターン２８とをボンディング
ワイヤ３１で接続する。次の工程では、図８に示すよう
に、集合基板３６の上部全面にトランスファモールド又
はキャスティングあるいはポッティング等の手段によっ
て熱硬化性の透光性樹脂体２４を成形し、発光ダイオー
ド素子２３やボンディングワイヤ３１を樹脂封止する。
透光性樹脂体２４が熱硬化することにより半球形状の凸
レンズが形成される。最後に、集合基板３６に想定され
たダイシングライン３５に沿ってカットし、一つ一つの
表面実装型発光ダイオードに分割する。FIGS. 4 to 8 show a method of manufacturing a surface-mounted light-emitting diode having the above-described structure.
First, as shown in FIG. 4, in the first step, a long through hole 37 and a concave portion 22 are provided on the upper surface of an aggregate substrate 36 in which dicing lines 35 are assumed for each substrate 21. The concave portion 22 may be formed at the same time when the substrate 21 itself is formed using a mold, or may be formed by counterboring a hole using a tapered end mill for each substrate 21. In the next step, a die bond electrode pattern 27 and a second electrode pattern 28 are formed continuously on the upper surface of the collective substrate 36 as shown in FIG. At this time, the die bond electrode pattern 27 in the concave portion 22 is also formed at the same time. As a means for forming these electrode patterns, for example, electroless copper plating is applied to the entire surface of the collective substrate 36, and after performing exposure processing using a mask, etching processing or resist peeling is performed to form an electrode pattern having a predetermined shape. . afterwards,
Electrode plating of nickel and gold on the copper foil completes the electrode pattern. In the next step, as shown in FIG. 6, the light emitting diode element 23 is placed substantially at the center of the concave portion 22 and die-bonded to the die bond electrode pattern 27 via the conductive adhesive 29, and the collective substrate 36 is cured in a curing furnace. Then, the light emitting diode element 23 is fixed on the die bond electrode pattern 27. In the next step, as shown in FIG. 7, the light emitting diode element 23 and the second electrode pattern 28 are connected by the bonding wire 31. In the next step, as shown in FIG. 8, a thermosetting translucent resin body 24 is formed on the entire upper surface of the collective substrate 36 by means such as transfer molding, casting or potting, and the light emitting diode element 23 and the bonding wire are formed. 31 is resin-sealed.
When the translucent resin body 24 is thermally cured, a hemispherical convex lens is formed. Finally, the substrate is cut along the dicing line 35 assumed on the collective substrate 36, and divided into individual surface-mounted light emitting diodes.

【００１６】なお、上述の工程で製造された表面実装型
発光ダイオードをマザーボード３２上に実装する場合に
は、自動マウント機で表面実装型発光ダイオードを一つ
一つ真空吸着してマザーボード３２上に移送する。この
時、透光性樹脂体２４を吸着してマザーボード３２上に
移送する。When mounting the surface-mounted light-emitting diodes manufactured in the above-described steps on the motherboard 32, the surface-mounted light-emitting diodes are vacuum-adsorbed one by one by an automatic mounting machine, and are mounted on the motherboard 32. Transfer. At this time, the translucent resin body 24 is adsorbed and transferred onto the motherboard 32.

【００１７】図９は、表面実装型発光ダイオードの第２
実施例を示したものである。この実施例では、基板２１
上に形成される凹部２２の底面２５を円形状とし、底面
２５の周囲から立ち上がる内壁面２６に外向きの傾斜を
付けて上側が丸く開いたすり鉢形状としたものである。
なお、それ以外の構成は上記実施例と同じであるので、
詳細な説明は省略する。この実施例にあっても内壁面２
６が外向きに傾斜しているので、発光ダイオード素子２
３から側面方向に出た光を上方向に反射させるのに加え
て、内壁面２６が円形の鏡になっているので、発光ダイ
オード素子２３から発した側面方向の光を、さらに効率
よく上方向に向けることができる。この場合、内壁面２
６に曲率を持たせて碗状に形成することで、更に上方へ
の反射効率を高くすることができる。なお、凹部２２の
形状は、内壁面２６の角度が基板２１の上面に対して概
ね４５゜以下であれば、上記いずれの実施例に限定され
ないのは勿論である。FIG. 9 shows a second example of the surface mount type light emitting diode.
It shows an example. In this embodiment, the substrate 21
The bottom surface 25 of the concave portion 22 formed above has a circular shape, and the inner wall surface 26 rising from the periphery of the bottom surface 25 has an outward slope so as to have a mortar shape in which the upper side is open round.
Since the other configuration is the same as the above embodiment,
Detailed description is omitted. Even in this embodiment, the inner wall surface 2
6 is inclined outward, so that the light emitting diode element 2
In addition to reflecting the light emitted from the light emitting element 3 in the side direction upward, the inner wall surface 26 is a circular mirror, so that the light emitted from the light emitting diode element 23 in the side direction can be more efficiently upwardly reflected. Can be turned on. In this case, the inner wall 2
By forming the bowl 6 into a bowl shape with a curvature, the reflection efficiency upward can be further increased. The shape of the recess 22 is not limited to any of the above embodiments as long as the angle of the inner wall surface 26 is approximately 45 ° or less with respect to the upper surface of the substrate 21.

【００１８】図１０は、本発明に係る表面実装型発光ダ
イオードの第３実施例を示したものである。この実施例
では基板２１の上面に形成される透光性樹脂体２４の上
部を水平にカットして水平面３８を設けた以外、前記第
１の実施例と同様の構成であるので、詳細な説明は省略
する。FIG. 10 shows a third embodiment of the surface mount type light emitting diode according to the present invention. This embodiment has the same configuration as that of the first embodiment, except that the upper surface of the translucent resin body 24 formed on the upper surface of the substrate 21 is horizontally cut to provide a horizontal plane 38, and thus a detailed description will be given. Is omitted.

【００１９】このような形状からなる透光性樹脂体２４
を備えた表面実装型発光ダイオードにあっても、発光ダ
イオード素子２３から側面方向に出た光は、ダイボンド
電極パターン２７によって上方向に反射され、透光性樹
脂体２４で集光されるために、上方向への光出力が強い
ものとなって明るい発光が得られる。また、このように
透光性樹脂体２４の上部に水平面３８を形成したこと
で、水平面３８での自動マウント機における真空吸着性
が確保されるため、マザーボード３２上への実装がより
一層確実なものとなる。Translucent resin body 24 having such a shape
However, even in a surface-mount type light emitting diode having a light emitting diode, light emitted from the light emitting diode element 23 in the lateral direction is reflected upward by the die bond electrode pattern 27 and collected by the translucent resin body 24. The light output in the upward direction becomes strong, and bright light emission is obtained. Further, since the horizontal surface 38 is formed on the upper part of the translucent resin body 24 in this manner, the vacuum suction of the automatic mounting machine on the horizontal surface 38 is ensured, so that the mounting on the motherboard 32 is more reliable. It will be.

【００２０】[0020]

【発明の効果】以上説明したように、本発明に係る表面
実装型発光ダイオードによれば、基板に形成されたダイ
ボンド電極パターン上に、内壁面が外側に傾斜した凹部
を設けると共に、この凹部内に発光ダイオード素子を固
着し、発光ダイオード素子の上方を半球形状に形成した
透光性樹脂体で封止したので、発光ダイオード素子から
側面方向に出た光は凹部の内壁面に反射して上方に向か
う光となり、更に透光性樹脂体を通過する際に半球体が
レンズの役目をして光を集光するために、上方向への光
出力が強いものとなって高出力の発光が得られるといっ
た効果がある。As described above, according to the surface mount type light emitting diode of the present invention, a concave portion whose inner wall surface is inclined outward is provided on the die bond electrode pattern formed on the substrate. The light-emitting diode element is fixed to the light-emitting diode element, and the upper part of the light-emitting diode element is sealed with a translucent resin body formed in a hemispherical shape. When the light passes through the translucent resin body, the hemisphere acts as a lens and collects the light. There is an effect that it can be obtained.

【００２１】また、本発明に係る表面実装型発光ダイオ
ードの製造方法によれば、集合基板上で一括処理する製
造工程を採用したことで、簡単にしかも大量に表面実装
型発光ダイオードを得ることができ、大幅なコストダウ
ンが可能で経済的効果が大である。そして、上面実装と
側面実装が可能な上、自動マウントも可能であるなど、
工数削減や歩留りの向上、更には信頼性の向上なども図
ることができる。Further, according to the method of manufacturing a surface-mounted light emitting diode according to the present invention, since a manufacturing process of performing collective processing on a collective substrate is employed, it is possible to obtain a surface-mounted light emitting diode simply and in large quantities. It is possible to greatly reduce costs and has a great economic effect. In addition to being capable of top and side mounting, automatic mounting is also possible,
The number of steps can be reduced, the yield can be improved, and the reliability can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に係る表面実装型発光ダイオードの第１
実施例を示す斜視図である。FIG. 1 is a first view of a surface mount type light emitting diode according to the present invention.
It is a perspective view showing an example.

【図２】上記図１のＡ−Ａ線断面図である。FIG. 2 is a sectional view taken along line AA of FIG. 1;

【図３】上記実施例に係る表面実装型発光ダイオードを
マザーボードに実装した時の断面図である。FIG. 3 is a cross-sectional view when the surface-mounted light emitting diode according to the embodiment is mounted on a motherboard.

【図４】上記実施例に係る表面実装型発光ダイオードの
凹部形成工程図である。FIG. 4 is a process chart of forming a concave portion of the surface-mounted light emitting diode according to the embodiment.

【図５】上記実施例に係る表面実装型発光ダイオードの
電極パターン形成工程図である。FIG. 5 is a process chart of forming an electrode pattern of the surface-mounted light emitting diode according to the embodiment.

【図６】上記実施例に係る表面実装型発光ダイオードの
ダイボンド工程図である。FIG. 6 is a die bonding process diagram of the surface-mounted light emitting diode according to the above embodiment.

【図７】上記実施例に係る表面実装型発光ダイオードの
ワイヤボンド工程図である。FIG. 7 is a diagram showing a wire bonding step of the surface-mounted light emitting diode according to the embodiment.

【図８】上記実施例に係る表面実装型発光ダイオードの
樹脂封止工程図である。FIG. 8 is a resin-sealing process diagram of the surface-mounted light-emitting diode according to the embodiment.

【図９】本発明に係る表面実装型発光ダイオードの第２
実施例を示す斜視図である。FIG. 9 shows a second example of the surface mount type light emitting diode according to the present invention.
It is a perspective view showing an example.

【図１０】本発明に係る表面実装型発光ダイオードの第
３実施例を示す断面図である。FIG. 10 is a sectional view showing a third embodiment of the surface-mounted light emitting diode according to the present invention.

【図１１】従来における表面実装型発光ダイオードの一
例を示す斜視図である。FIG. 11 is a perspective view showing an example of a conventional surface mount light emitting diode.

【図１２】上記図１１のＦ−Ｆ線断面図である。FIG. 12 is a sectional view taken along line FF of FIG. 11;

【図１３】従来における表面実装型発光ダイオードの他
の例を示す斜視図である。FIG. 13 is a perspective view showing another example of a conventional surface mount light emitting diode.

【図１４】上記図１３のＧ−Ｇ線断面図である。FIG. 14 is a sectional view taken along line GG of FIG. 13;

【図１５】従来におけるリードフレーム型発光ダイオー
ドの一例を示す断面図である。FIG. 15 is a cross-sectional view illustrating an example of a conventional lead frame type light emitting diode.

【符号の説明】[Explanation of symbols]

２１ 基板 ２２ 凹部 ２３ 発光ダイオード素子 ２４ 透光性樹脂体 ２５ 底面 ２６ 内壁面 ２７ ダイボンド電極パターン ２８ セカンド電極パターン ２９ 導電性接着剤 ３１ ボンディングワイヤ DESCRIPTION OF SYMBOLS 21 Substrate 22 Concave part 23 Light emitting diode element 24 Translucent resin body 25 Bottom surface 26 Inner wall surface 27 Die bond electrode pattern 28 Second electrode pattern 29 Conductive adhesive 31 Bonding wire

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 基板の上面にダイボンド電極パターンと
セカンド電極パターンとを設け、ダイボンド電極パター
ンの上に導電性接着剤によって発光ダイオード素子を固
着すると共に、発光ダイオード素子と前記セカンド電極
パターンとをボンディングワイヤによって接続し、発光
ダイオード素子及びボンディングワイヤを透光性樹脂体
によって封止してなる表面実装型発光ダイオードにおい
て、前記基板の上面に形成されたダイボンド電極パター
ン上に内壁面が外側へ傾斜した凹部を設け、この凹部内
に発光ダイオード素子を配置すると共に、その上方を半
球形状の透光性樹脂体で封止したことを特徴とする表面
実装型発光ダイオード。1. A die bond electrode pattern and a second electrode pattern are provided on an upper surface of a substrate, a light emitting diode element is fixed on the die bond electrode pattern by a conductive adhesive, and the light emitting diode element and the second electrode pattern are bonded. In a surface mount type light emitting diode in which a light emitting diode element and a bonding wire are sealed by a light transmitting resin body, the inner wall surface is inclined outward on a die bond electrode pattern formed on the upper surface of the substrate. A surface-mounted light-emitting diode, comprising a concave portion, a light-emitting diode element disposed in the concave portion, and an upper portion thereof sealed with a hemispherical transparent resin body. 【請求項２】 集合基板の上面に、各基板毎に凹部を形
成する凹部形成工程と、 前記凹部が形成された集合基板上にダイボンド電極パタ
ーンとセカンド電極パターンを形成する電極パターン形
成工程と、 前記各基板毎に形成された凹部内で、ダイボンド電極パ
ターン上に発光ダイオード素子を固着するダイボンド工
程と、 前記発光ダイオード素子とセカンド電極パターンとをボ
ンディングワイヤで接続するワイヤボンド工程と、 上記集合基板の上面全面にキャスティング又はトランス
ファモールドによって熱硬化性の透光性樹脂体を成形し
て発光ダイオード素子やボンディングワイヤを封止する
樹脂封止工程と、 上記集合基板を各基板毎にカットして一つ一つの表面実
装型発光ダイオードに分割する分割工程とを備えたこと
を特徴とする表面実装型発光ダイオードの製造方法。2. A concave portion forming step of forming a concave portion for each substrate on an upper surface of the collective substrate; an electrode pattern forming step of forming a die bond electrode pattern and a second electrode pattern on the collective substrate having the concave portion formed therein; A die bonding step of fixing a light emitting diode element on a die bonding electrode pattern in a recess formed for each of the substrates; a wire bonding step of connecting the light emitting diode element and a second electrode pattern with bonding wires; A resin sealing step of molding a thermosetting translucent resin body by casting or transfer molding over the entire upper surface of the substrate to seal the light emitting diode elements and the bonding wires; A dividing step for dividing the light-emitting diodes into individual surface-mounted light-emitting diodes. Method for producing a mounted light emitting diode.
JP11481997A 1997-05-02 1997-05-02 Surface mounting-type light-emitting diode and its manufacture Pending JPH10308535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11481997A JPH10308535A (en) 1997-05-02 1997-05-02 Surface mounting-type light-emitting diode and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11481997A JPH10308535A (en) 1997-05-02 1997-05-02 Surface mounting-type light-emitting diode and its manufacture

Publications (1)

Publication Number Publication Date
JPH10308535A true JPH10308535A (en) 1998-11-17

Family

ID=14647487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11481997A Pending JPH10308535A (en) 1997-05-02 1997-05-02 Surface mounting-type light-emitting diode and its manufacture

Country Status (1)

Country Link
JP (1) JPH10308535A (en)

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JP2002009349A (en) * 2000-06-26 2002-01-11 Koha Co Ltd Surface emission led and its manufacturing method
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JP2003008071A (en) * 2001-06-22 2003-01-10 Stanley Electric Co Ltd Led lamp using led substrate assembly
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Publication number Priority date Publication date Assignee Title
JP2002009349A (en) * 2000-06-26 2002-01-11 Koha Co Ltd Surface emission led and its manufacturing method
JP2002270901A (en) * 2001-03-12 2002-09-20 Citizen Electronics Co Ltd Light emitting diode and its manufacturing method
JP2003008071A (en) * 2001-06-22 2003-01-10 Stanley Electric Co Ltd Led lamp using led substrate assembly
CN100442546C (en) * 2001-12-07 2008-12-10 日立电线株式会社 Luminance element and making method thereof and lead frame for making said element
US7645643B2 (en) 2003-06-06 2010-01-12 Stanley Electric Co., Ltd. Optical semiconductor device method
US7960746B2 (en) 2004-01-06 2011-06-14 Samsung Led Co., Ltd. Low resistance electrode and compound semiconductor light emitting device including the same
KR100604602B1 (en) 2004-05-19 2006-07-24 서울반도체 주식회사 Light emitting diode lens and light emitting diode having the same
KR100613066B1 (en) * 2004-07-09 2006-08-16 서울반도체 주식회사 Light emitting diode package having a monolithic heat sinking slug and method of fabricating the same
JP2006294804A (en) * 2005-04-08 2006-10-26 Sharp Corp Light emitting diode
JP4744178B2 (en) * 2005-04-08 2011-08-10 シャープ株式会社 Light emitting diode
JP2011507291A (en) * 2007-12-19 2011-03-03 バイエル・マテリアルサイエンス・アクチェンゲゼルシャフト Luminescent body having LEDDIE and method for manufacturing the same
JP2017085025A (en) * 2015-10-30 2017-05-18 日亜化学工業株式会社 Light emitting device and method of manufacturing light emitting module
US9941451B2 (en) 2015-10-30 2018-04-10 Nichia Corporation Light emitting device and method of manufacturing light emitting module

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