JPH10308535A - Surface mounting-type light-emitting diode and its manufacture - Google Patents

Surface mounting-type light-emitting diode and its manufacture

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Publication number
JPH10308535A
JPH10308535A JP11481997A JP11481997A JPH10308535A JP H10308535 A JPH10308535 A JP H10308535A JP 11481997 A JP11481997 A JP 11481997A JP 11481997 A JP11481997 A JP 11481997A JP H10308535 A JPH10308535 A JP H10308535A
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Prior art keywords
emitting diode
light emitting
electrode pattern
light
substrate
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JP11481997A
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Japanese (ja)
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Takeshi Miura
剛 三浦
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Citizen Electron Co Ltd
株式会社シチズン電子
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED

Abstract

PROBLEM TO BE SOLVED: To provide a surface mounting-type light-emitting diode which can obtain high-output emitted light, by increasing the condensing property of light radiated from a light-emitting diode element. SOLUTION: A recessed part 22 whose inner wall faces 26 are tilted to the outside is formed on a side-bonded electrode pattern 27 which is formed on the surface of a substrate 21, a light-emitting diode element 23 is arranged inside the recessed part 2, and its upper part is sealed with a hemispherical translucent resin body 24. As a result, light which is radiated from the light- emitting diode element 23 is reflected by the inner wall faces 26 in the recessed part 22 so as to be directed upward, its reflected light is condensed by the lens-shaped translucent resin body 24, and emitted light whose optical output is intense is obtained.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、マザーボードの表面に直接実装される表面実装型発光ダイオード及びその製造方法に関するものである。 The present invention relates to relates to a surface mount-type light-emitting diode and its manufacturing method is directly mounted on the surface of the motherboard.

【0002】 [0002]

【従来の技術】従来、この種の表面実装型発光ダイオードとしては、例えば図11及び図12に示したタイプのものと、図13及び図14に示したタイプのものが知られている。 Conventionally, as this type of a surface-mount type light emitting diode, and the type of those shown in FIGS. 11 and 12 for example, it is known of the type shown in FIGS. 13 and 14. いずれのタイプも基板1の上面にダイボンド電極パターン2とセカンド電極パターン3とを設け、ダイボンド電極パターン2の上に導電性接着剤4によって発光ダイオード素子5を固着すると共に、発光ダイオード素子5と前記セカンド電極パターン3とをボンディングワイヤ6によって接続し、発光ダイオード素子5及びボンディングワイヤ6を透光性樹脂体7によって封止した構造のものである。 Both types provided a die bonding electrode pattern 2 and the second electrode pattern 3 on the upper surface of the substrate 1, thereby fixing the light emitting diode element 5 by the conductive adhesive 4 on the die bonding electrode pattern 2, wherein the light emitting diode element 5 a second electrode pattern 3 is connected by a bonding wire 6, it is of the sealed structure of the light emitting diode element 5 and the bonding wire 6 by the translucent resin member 7. そして、前者の場合は平らな基板1の上面に発光ダイオード素子5を固着し、その基板1 Then, if the former is fixed a light emitting diode element 5 on the upper surface of the flat substrate 1, the substrate 1
の上面を六面体の透光性樹脂体7によって封止したのに対して、後者の場合は基板1の上面に、内壁面が外側に傾斜した凹部8を設け、この凹部8内にまで延ばしたダイボンド電極パターン2上で発光ダイオード素子5を固着し、周囲と同一平面となるよう凹部8内に透光性樹脂体7を充填した構造のものとなっていた。 The upper surface was sealed with translucent resin member 7 of the hexahedron of the latter case the upper surface of the substrate 1, a recess 8 which has an inner wall surface inclined outwardly provided, extended until this recess 8 fixing a light emitting diode element 5 on die bonding electrode pattern 2, it had become a thing of the structure filled with translucent resin member 7 in the recess 8 so as to be around the same plane.

【0003】 [0003]

【発明が解決しようとする課題】ところで、上記従来の表面実装型発光ダイオードにあっては、前者の場合は発光ダイオード素子5から側面方向に出た光9が透光性樹脂体7を透過して周囲に拡散してしまうため上方向に集光できず、所定の光出力が得られないといった問題があった。 [SUMMARY OF THE INVENTION Incidentally, in the above conventional surface-mount type light emitting diode, in the former case the light 9 emitted laterally from the light-emitting diode element 5 is transmitted through the translucent resin member 7 can not condensing upward for diffuses around Te, it had given problem light output can not be obtained. 一方、後者の場合は発光ダイオード素子5から側面方向に出た光は、凹部8の内壁面に反射されて上方向に向かうが、集光されずにそのまま平行光10として発光するために、光出力が必ずしも十分といえるものではなかった。 On the other hand, in the latter case the light emitted laterally from the light-emitting diode element 5 is directed upward and is reflected on the inner wall surface of the recess 8, to emit directly as the parallel light 10 without being condensed, light output did not say that necessarily sufficient.

【0004】一方、集光性を重視した発光ダイオードとして、従来から図15に示したようなリードフレーム型の発光ダイオード11が知られている。 On the other hand, as a light emitting diode with an emphasis on light harvesting, a lead frame type light emitting diode 11 as shown in FIG. 15 has been known. この種の発光ダイオード11は、一方のリードフレーム12aの頂部に凹部13を設け、この凹部13に発光ダイオード素子1 Emitting diode 11 of this kind, the concave portion 13 provided on the top portion of one lead frame 12a, the light emitting diode element 1 in the recess 13
4を載せて固着すると共に、この発光ダイオード素子1 4 with fixed put, the light emitting diode element 1
4と他方のリードフレーム12bの頂部をボンディングワイヤ15によって接続したものの周囲を、透光性樹脂体16によって封止した構造のものである。 Around those connecting the top by a bonding wire 15 of 4 and the other lead frame 12b, it is of the sealed structure by translucent resin member 16.

【0005】しかしながら、上記発光ダイオード11 However, the light emitting diode 11
は、リードフレーム12aの頂部に設けた凹部13によって、発光ダイオード素子14から出た光を効果的に上方向へ導き出すと共に、透光性樹脂体16の頂部が半球形状に形成されていることから集光作用も前述のものより期待できるが、この種のリードフレーム型の発光ダイオード11は、マザーボード上に表面実装することができず、大型化してしまうといった問題があった。 , Since the by the recesses 13 provided on the top portion of the lead frame 12a, with derive light emitted from the light emitting diode element 14 to effectively upward, the top of the translucent resin member 16 is formed in a hemispherical shape can be expected than condensing action also described above, the light emitting diode 11 of this type of lead frame can not be surface mounted on the motherboard, there is a problem increases in size.

【0006】そこで本発明は、表面実装型の発光ダイオードにおいて、発光ダイオード素子から出た光の集光性を高めることで、大きな光出力を得ることを目的とする。 [0006] The present invention provides a surface mounting type light-emitting diode, to increase the light collecting properties of the light from the light emitting diode element, and an object thereof is to obtain a large light output.

【0007】 [0007]

【課題を解決するための手段】すなわち、上記課題を解決するために、本発明に係る表面実装型発光ダイオードの特徴は、基板の上面に形成されたダイボンド電極パターン上に内壁面が外側へ傾斜した凹部を設け、この凹部内に発光ダイオード素子を配置すると共に、その上方を半球形状の透光性樹脂体で封止したことにある。 That SUMMARY OF THE INVENTION In order to solve the above problems, characteristic of the surface-mount type light emitting diode according to the present invention, the inclined inner wall surface on the die bonding electrode pattern formed on the upper surface of the substrate to the outside the concave portion is provided with, together with arranging the light emitting diode element in this recess, in that the upper sealed with translucent resin of hemispherical shape.

【0008】また、本発明に係る表面実装型発光ダイオードの製造方法の特徴は、集合基板の上面に、各基板毎に凹部を形成する凹部形成工程と、前記凹部が形成された集合基板上にダイボンド電極パターンとセカンド電極パターンを形成する電極パターン形成工程と、前記各基板毎に形成された凹部内で、ダイボンド電極パターン上に発光ダイオード素子を固着するダイボンド工程と、前記発光ダイオード素子とセカンド電極パターンとをボンディングワイヤで接続するワイヤボンド工程と、上記集合基板の上面全面にキャスティング又はトランスファモールドによって熱硬化性の透光性樹脂体を成形して発光ダイオード素子やボンディングワイヤを封止する樹脂封止工程と、上記集合基板を各基板毎にカットして一つ一つの表面実装型発 [0008] The feature of the manufacturing method of a surface mounted light emitting diode according to the present invention, the upper surface of the collective substrate, a recess forming step of forming a recess in each substrate, on the set substrate on which the recess is formed the electrode pattern forming step of forming a die bonding electrode pattern and the second electrode pattern, wherein the at recess formed on each substrate, the die bonding step of fixing the light emitting diode element on the die bonding electrode pattern, the light emitting diode element and the second electrode a wire bonding step of connecting the pattern by bonding wires, resin sealing for sealing the light emitting diode element and the bonding wire by molding the thermosetting light-transmissive resin member by casting or transfer molding to the entire upper surface of the collective substrate and stopping step, a surface mount type originated one by one to cut the assembly substrate for each substrate ダイオードに分割する分割工程とを備えたことにある。 In that a dividing step of dividing the diode.

【0009】 [0009]

【発明の実施の形態】以下、添付図面に基づいて本発明に係る表面実装型発光ダイオードの実施例を詳細に説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a surface mounted light emitting diode according to the present invention will be described in detail with reference to the accompanying drawings. 図1及び図2は、本発明に係る表面実装型発光ダイオードの第1実施例を示したものである。 1 and 2 shows a first embodiment of a surface mounted light emitting diode according to the present invention. この実施例ではガラスエポキシなどからなる基板21の上面両側にダイボンド電極パターン27とセカンド電極パターン2 Die bonding electrode pattern 27 on the upper surface sides of the substrate 21 made of glass epoxy in this embodiment and the second electrode pattern 2
8が対向して形成されている。 8 are formed to face. そして、ダイボンド電極パターン27の先端部分は基板21の上面略中央まで延び、該先端部分に基板21へ凹むダイボンド電極パターン27の凹部22が形成されている。 Then, the tip portion of the die bonding electrode pattern 27 extends to the upper surface substantially center of the substrate 21, the recess 22 of the die bonding electrode pattern 27 which is recessed into the substrate 21 to the distal end portion is formed. この凹部22は、 The recess 22,
中央が低く上側が方形状に開いた形状をしており、略正方形の底面25の各辺からは外側に傾斜する四つの内壁面26が立ち上がっている。 Center has a shape in which the upper is open in a square shape low rises are four inner wall surfaces 26 inclined outwardly from each side of the bottom surface 25 of substantially square. 底面25及び内壁面26 The bottom 25 and the inner wall surface 26
は、ともにダイボンド電極パターン27の一部で構成されており、特に内壁面26は、光の反射率を上げるために平滑に仕上げて金メッキ等の表面処理で光沢を出している。 Are both are composed of a part of a die bonding electrode pattern 27, particularly the inner wall surface 26 has issued a glossy surface treatment such as gold plating and smooth finish to increase the reflectivity of light. なお、前記内壁面26の傾斜角度は、基板21の上面に対して45°、もしくはそれよりやや小さい角度が望ましい。 The inclination angle of the inner wall surface 26, 45 ° to the top surface of the substrate 21, or it from slightly smaller angle is desirable.

【0010】上記凹部22の底面25の略中央には発光ダイオード素子23が配置され、導電性接着剤29によって固着されている。 [0010] substantially at the center of the bottom surface 25 of the recess 22 is disposed the light emitting diode element 23 is affixed by a conductive adhesive 29. したがって、発光ダイオード素子23から側面方向に出た光30aは、凹部22の各内壁面26に反射したのち上方向の光30bとして進む。 Accordingly, the light 30a from the light emitting diode element 23 comes into lateral proceeds as light 30b of the later upward reflected on the inner wall surface 26 of the recess 22. 内壁面26は四面全体にダイボンド電極パターン27が形成されるので全面で光を反射することができる他、ダイボンド電極パターン27の表面が金メッキされて平面鏡となっているため、発光ダイオード素子23から側面方向に出た光を効率よく上方向に反射することができる。 Since the inner wall surface 26 is die-bonded electrode pattern 27 on the entire four surfaces is formed in addition to be able to reflect light in the entire surface, since the surface of the die bonding electrode pattern 27 is in the are gold plated flat mirror, a side from the light emitting diode element 23 it is possible to reflect light emitted in the direction efficiently upward.

【0011】上記発光ダイオード素子23とセカンド電極パターン28とはボンディングワイヤ31によって接続されている。 [0011] The light emitting diode element 23 and the second electrode pattern 28 are connected by a bonding wire 31. そして、これら発光ダイオード素子23 Then, these light-emitting diode element 23
及びボンディングワイヤ31の上方を半球形状の透光性樹脂体24で封止している。 And has an upper bonding wire 31 is sealed with a translucent resin material 24 of hemispherical shape. なお、ダイボンド電極パターン27とセカンド電極パターン28は、共に基板21 Incidentally, die bonding electrode pattern 27 and the second electrode pattern 28 are both substrate 21
の側面を回り込むようにして基板21の裏面側まで延びている。 And it extends to the back surface side of the substrate 21 so as to wrap around the sides.

【0012】上記透光性樹脂体24は、基板21の上面に半球形状に突出された透明の樹脂体であって凸レンズとして作用し、発光ダイオード素子23から発して凹部22の内壁面26に反射して上方向に向かう光30bを集光する。 [0012] The above light-transmitting resin member 24 is a resin of the transparent protruded in a hemispherical shape acts as a convex lens on the upper surface of the substrate 21, reflected on the inner wall surface 26 of the recess 22 emanating from the light emitting diode element 23 and condensing light 30b toward the upward direction. 透光性樹脂体24は、キャスティングやポッティングあるいはトランスファモールドなどによって成形され、頂部が発光ダイオード素子23の真上に位置する。 Translucent resin member 24 is molded, such as by casting or potting or transfer molding, the top portion is positioned directly above the light emitting diode element 23. なお、透光性樹脂体24の曲率半径は集光が得られれば特に制限を受けず、長円の一部で構成することも可能である。 Furthermore, the curvature radius of the translucent resin member 24 without being particularly limited as long obtained condenser, it is also possible to constitute a part of the oval. また、樹脂の屈折率も集光が得られれば特に限定されるものではない。 Further, not the refractive index of the resin is also limited particularly as long obtained condenser.

【0013】このような構成からなる表面実装型発光ダイオードにあっては、発光ダイオード素子23から側面方向に出た光30aは、凹部22の内壁面26に反射して上方に向かう光30bとなり、更に透光性樹脂体24 [0013] In the surface mounted light emitting diode having such a configuration, the light 30a from the light emitting diode element 23 comes into side direction, becomes light 30b directed upwardly reflected on the inner wall surface 26 of the recess 22, Furthermore translucent resin material 24
を通過する際に集光されるために、上面方向への光出力が強いものとなって明るい発光が得られる。 To be focused when passing through the bright emission is obtained become a light output to the upper surface direction is strong.

【0014】図3は、上記構成からなる表面実装型発光ダイオードをマザーボード32の上面に実装した時の断面図である。 [0014] Figure 3 is a cross-sectional view of the mounted with a surface mount light emitting diode having the above structure the upper surface of the motherboard 32. マザーボード32の表面に形成されている左右の電極パターン33a,33b上に表面実装型発光ダイオードを上向きに載置し、ダイボンド電極パターン27、セカンド電極パターン28をマザーボード32の各電極パターン33a,33bに半田34によって接合する。 Left and right electrode patterns 33a formed on the surface of the motherboard 32, upwardly by placing the surface mount type light emitting diode on 33b, die bonding electrode pattern 27, the second electrode pattern 28 the electrode patterns 33a of the motherboard 32, the 33b joined by solder 34. このようにしてマザーボード32に実装された表面実装型発光ダイオードは、垂直方向に指向性がある明るい光を発することができる。 Thus the surface mounted light emitting diodes mounted on the motherboard 32 can emit bright light is directed in a vertical direction. なお、上面実装に限らずマザーボード32に側面実装することもでき、この場合には水平方向に指向性のある光が発せられる。 Even can be side mounted on a mother board 32 is not limited to the upper surface mounting, emitted light having directivity in the horizontal direction in this case.

【0015】図4乃至図8は、上記構成からなる表面実装型発光ダイオードの一製造方法を示したものである。 [0015] FIGS. 4-8, there is shown a manufacturing method of a surface mounted light emitting diode having the above structure.
まず、最初の工程では図4に示すように、基板21毎にダイシングライン35が想定される集合基板36の上面に、長孔スルーホール37と凹部22を設ける。 First, in the first step as shown in FIG. 4, the upper surface of the collective substrate 36 dicing lines 35 is assumed for each substrate 21, providing a long hole through hole 37 and the recess 22. この凹部22は、型を用いて基板21自体を成形するのと同時に形成するか、もしくは基板21毎にテーパ付きのエンドミルを用いてザグリ穴加工して形成するなどの方法がある。 The recess 22, there are methods such as formed by the counterbore processed using simultaneously or form, or end mills tapered for each substrate 21 to mold the substrate 21 itself by using a mold. 次の工程では、図5に示すように集合基板36の上面にダイボンド電極パターン27とセカンド電極パターン28とを連続して形成する。 In the next step, sequentially forming a die bonding electrode pattern 27 and the second electrode pattern 28 on the upper surface of the collective substrate 36 as shown in FIG. このとき、凹部22内のダイボンド電極パターン27も同時に形成される。 At this time, die bonding electrode pattern 27 in the recess 22 is also formed simultaneously. これら電極パターンの形成手段としては、例えば無電解銅メッキを集合基板36の全面に施し、マスクを使った露光処理後、エッチング処理やレジスト剥離を行うことにより、所定形状の電極パターンに形成される。 As means for forming these electrode patterns, for example, subjected to electroless copper plating on the entire surface of the collective substrate 36, after the exposure process using a mask, by performing etching or resist stripping, it is formed on the electrode pattern having a predetermined shape . その後、 after that,
銅箔にニッケル、金を電解メッキし、電極パターンが完成する。 Nickel to copper foil, gold electroplating, the electrode pattern is completed. 次の工程では、図6に示すように、凹部22の略中央に発光ダイオード素子23を載置して、ダイボンド電極パターン27に導電性接着材29を介してダイボンドし、集合基板36をキュア炉に入れ、発光ダイオード素子23をダイボンド電極パターン27上に固着する。 In the next step, as shown in FIG. 6, by placing the light emitting diode element 23 substantially at the center of the recess 22, die-bonded via a conductive adhesive 29 to the die bonding electrode pattern 27, curing oven the assembly substrate 36 placed in, to fix the light emitting diode element 23 on the die bonding electrode pattern 27. 次の工程では、図7に示すように、発光ダイオード素子23とセカンド電極パターン28とをボンディングワイヤ31で接続する。 In the next step, as shown in FIG. 7, for connecting the light emitting diode element 23 and the second electrode pattern 28 by the bonding wire 31. 次の工程では、図8に示すように、集合基板36の上部全面にトランスファモールド又はキャスティングあるいはポッティング等の手段によって熱硬化性の透光性樹脂体24を成形し、発光ダイオード素子23やボンディングワイヤ31を樹脂封止する。 In the next step, as shown in FIG. 8, by molding a translucent resin material 24 of thermosetting by means such as transfer molding or casting or potting the entire upper surface of the collective substrate 36, the light emitting diode element 23 and the bonding wires 31 sealed with resin.
透光性樹脂体24が熱硬化することにより半球形状の凸レンズが形成される。 Convex hemisphere shape is formed by the translucent resin member 24 is thermally cured. 最後に、集合基板36に想定されたダイシングライン35に沿ってカットし、一つ一つの表面実装型発光ダイオードに分割する。 Finally, cut along the dicing line 35 which is assumed to aggregate substrate 36 is divided into each one of a surface-mount type light emitting diode.

【0016】なお、上述の工程で製造された表面実装型発光ダイオードをマザーボード32上に実装する場合には、自動マウント機で表面実装型発光ダイオードを一つ一つ真空吸着してマザーボード32上に移送する。 [0016] Incidentally, when implementing a surface mount-type light-emitting diode fabricated in the above process on the mother board 32, and one by one vacuum suction surface mount-type light-emitting diode in an automatic mounting machine motherboard 32 on the to transport. この時、透光性樹脂体24を吸着してマザーボード32上に移送する。 In this case, to transfer on the mother board 32 by adsorbing translucent resin member 24.

【0017】図9は、表面実装型発光ダイオードの第2 [0017] Figure 9, the second surface mount light emitting diode
実施例を示したものである。 It illustrates an embodiment. この実施例では、基板21 In this embodiment, the substrate 21
上に形成される凹部22の底面25を円形状とし、底面25の周囲から立ち上がる内壁面26に外向きの傾斜を付けて上側が丸く開いたすり鉢形状としたものである。 The bottom surface 25 of the recess 22 formed in the upper and circular, in which the upper has a rounded open bowl shape with a slope outwardly to the inner wall surface 26 rising from the periphery of the bottom surface 25.
なお、それ以外の構成は上記実施例と同じであるので、 Since other configurations are the same as in Example,
詳細な説明は省略する。 Detailed description thereof will be omitted. この実施例にあっても内壁面2 The inner wall surface 2 Also in this embodiment
6が外向きに傾斜しているので、発光ダイオード素子2 Since 6 is inclined outwardly, the light emitting diode element 2
3から側面方向に出た光を上方向に反射させるのに加えて、内壁面26が円形の鏡になっているので、発光ダイオード素子23から発した側面方向の光を、さらに効率よく上方向に向けることができる。 3 light emitted laterally from the addition to reflect upward, since the inner wall surface 26 is in a circular mirror, the light lateral emitted from the light emitting diode element 23, more efficiently upward it can be directed to. この場合、内壁面2 In this case, the inner wall surface 2
6に曲率を持たせて碗状に形成することで、更に上方への反射効率を高くすることができる。 6 and to have a curvature by forming the bowl-shaped, it is possible to further increase the efficiency of upward reflection. なお、凹部22の形状は、内壁面26の角度が基板21の上面に対して概ね45゜以下であれば、上記いずれの実施例に限定されないのは勿論である。 The shape of the recess 22 is equal to or less than approximately 45 ° angle of the inner wall 26 to the top surface of the substrate 21, not limited to any of the above embodiments is a matter of course.

【0018】図10は、本発明に係る表面実装型発光ダイオードの第3実施例を示したものである。 [0018] Figure 10 shows a third embodiment of a surface mounted light emitting diode according to the present invention. この実施例では基板21の上面に形成される透光性樹脂体24の上部を水平にカットして水平面38を設けた以外、前記第1の実施例と同様の構成であるので、詳細な説明は省略する。 Except that the horizontal surface 38 provided by cutting horizontally top of the translucent resin member 24 formed on the upper surface of the substrate 21 in this embodiment, the same structure as the first embodiment, detailed description It omitted.

【0019】このような形状からなる透光性樹脂体24 The translucent resin member made of such a shape 24
を備えた表面実装型発光ダイオードにあっても、発光ダイオード素子23から側面方向に出た光は、ダイボンド電極パターン27によって上方向に反射され、透光性樹脂体24で集光されるために、上方向への光出力が強いものとなって明るい発光が得られる。 Even in a surface mount-type light-emitting diode with a light emitted from the light emitting diode element 23 laterally is reflected upward by the die bonding electrode pattern 27, in order to be collected by the translucent resin member 24 , bright luminescence is as light output in the upward direction is strong is obtained. また、このように透光性樹脂体24の上部に水平面38を形成したことで、水平面38での自動マウント機における真空吸着性が確保されるため、マザーボード32上への実装がより一層確実なものとなる。 In addition, by thus forming a horizontal surface 38 on top of the translucent resin member 24, since the vacuum adsorbing in an automatic mounting machine in the horizontal plane 38 is secured, it is more reliable mounting to the motherboard 32 on the things.

【0020】 [0020]

【発明の効果】以上説明したように、本発明に係る表面実装型発光ダイオードによれば、基板に形成されたダイボンド電極パターン上に、内壁面が外側に傾斜した凹部を設けると共に、この凹部内に発光ダイオード素子を固着し、発光ダイオード素子の上方を半球形状に形成した透光性樹脂体で封止したので、発光ダイオード素子から側面方向に出た光は凹部の内壁面に反射して上方に向かう光となり、更に透光性樹脂体を通過する際に半球体がレンズの役目をして光を集光するために、上方向への光出力が強いものとなって高出力の発光が得られるといった効果がある。 As described in the foregoing, according to the surface mounted light emitting diode according to the present invention, on the die bonding electrode pattern formed on the substrate, provided with a recess in which the inner wall surface inclined outwardly, in the recess emitting diode fixed element, since the upper light-emitting diode device was sealed with a translucent resin body formed in a hemispherical shape, the light emitted laterally from the light-emitting diode element is reflected on the inner wall surface of a concave upper becomes light directed to, in order to further condensing the light hemisphere to serve as a lens when passing through the translucent resin member, light emission with high output is intended light output is strong in the upward direction there is an effect such as is obtained.

【0021】また、本発明に係る表面実装型発光ダイオードの製造方法によれば、集合基板上で一括処理する製造工程を採用したことで、簡単にしかも大量に表面実装型発光ダイオードを得ることができ、大幅なコストダウンが可能で経済的効果が大である。 Further, according to the manufacturing method of a surface mounted light emitting diode according to the present invention, by adopting the manufacturing process for the batch processing on the set substrate, to obtain a easily and in large quantities a surface mount-type light-emitting diode can, possible economic effects are significant cost down is large. そして、上面実装と側面実装が可能な上、自動マウントも可能であるなど、 Then, on capable top mounting and side mounting, automatic mounting is also possible,
工数削減や歩留りの向上、更には信頼性の向上なども図ることができる。 Steps improve reduction and yield, more can be achieved well as improved reliability.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明に係る表面実装型発光ダイオードの第1 [1] first surface mount light emitting diode according to the present invention
実施例を示す斜視図である。 Is a perspective view showing an embodiment.

【図2】上記図1のA−A線断面図である。 2 is a sectional view along line A-A of FIG 1.

【図3】上記実施例に係る表面実装型発光ダイオードをマザーボードに実装した時の断面図である。 3 is a sectional view when mounting the surface mounted light emitting diode according to the embodiment to the motherboard.

【図4】上記実施例に係る表面実装型発光ダイオードの凹部形成工程図である。 4 is a concave portion forming step view of the surface mount type light emitting diode according to the embodiment.

【図5】上記実施例に係る表面実装型発光ダイオードの電極パターン形成工程図である。 Figure 5 is an electrode pattern formation process view of the surface mount type light emitting diode according to the embodiment.

【図6】上記実施例に係る表面実装型発光ダイオードのダイボンド工程図である。 6 is a die bonding process diagram of the surface-mount type light emitting diode according to the embodiment.

【図7】上記実施例に係る表面実装型発光ダイオードのワイヤボンド工程図である。 7 is a wire bonding process diagram of the surface-mount type light emitting diode according to the embodiment.

【図8】上記実施例に係る表面実装型発光ダイオードの樹脂封止工程図である。 8 is a resin sealing step view of the surface mount type light emitting diode according to the embodiment.

【図9】本発明に係る表面実装型発光ダイオードの第2 [9] The second surface mount light emitting diode according to the present invention
実施例を示す斜視図である。 Is a perspective view showing an embodiment.

【図10】本発明に係る表面実装型発光ダイオードの第3実施例を示す断面図である。 It is a sectional view showing a third embodiment of a surface mounted light emitting diode according to the present invention; FIG.

【図11】従来における表面実装型発光ダイオードの一例を示す斜視図である。 11 is a perspective view showing an example of a surface mount-type light-emitting diode in the prior art.

【図12】上記図11のF−F線断面図である。 12 is a sectional view taken along line F-F of FIG 11.

【図13】従来における表面実装型発光ダイオードの他の例を示す斜視図である。 13 is a perspective view showing another example of a surface mount-type light-emitting diode in the prior art.

【図14】上記図13のG−G線断面図である。 14 is a line G-G cross-sectional view of FIG 13.

【図15】従来におけるリードフレーム型発光ダイオードの一例を示す断面図である。 15 is a sectional view showing an example of a lead frame type light emitting diode in the prior art.

【符号の説明】 DESCRIPTION OF SYMBOLS

21 基板 22 凹部 23 発光ダイオード素子 24 透光性樹脂体 25 底面 26 内壁面 27 ダイボンド電極パターン 28 セカンド電極パターン 29 導電性接着剤 31 ボンディングワイヤ 21 substrate 22 recess 23 emitting wall diode element 24 translucent resin material 25 bottom 26 27 die bonding electrode pattern 28 second electrode pattern 29 conductive adhesive 31 bonding wire

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 基板の上面にダイボンド電極パターンとセカンド電極パターンとを設け、ダイボンド電極パターンの上に導電性接着剤によって発光ダイオード素子を固着すると共に、発光ダイオード素子と前記セカンド電極パターンとをボンディングワイヤによって接続し、発光ダイオード素子及びボンディングワイヤを透光性樹脂体によって封止してなる表面実装型発光ダイオードにおいて、前記基板の上面に形成されたダイボンド電極パターン上に内壁面が外側へ傾斜した凹部を設け、この凹部内に発光ダイオード素子を配置すると共に、その上方を半球形状の透光性樹脂体で封止したことを特徴とする表面実装型発光ダイオード。 1. A provided a die bonding electrode pattern and the second electrode pattern on the upper surface of the substrate, while fixing the light emitting diode element by a conductive adhesive on the die bonding electrode pattern, bonding a light emitting diode element and said second electrode pattern connect the wire, emitting in the diode element and the bonding wires becomes sealed by a translucent resin material to the surface mount-type light-emitting diode, the inner wall surface on the die bonding electrode pattern formed on the upper surface of the substrate is inclined outwardly a recess is provided, along with arranging the light emitting diode element in the recess, a surface-mount type light emitting diode to its upper, characterized in that sealed with translucent resin of hemispherical shape.
  2. 【請求項2】 集合基板の上面に、各基板毎に凹部を形成する凹部形成工程と、 前記凹部が形成された集合基板上にダイボンド電極パターンとセカンド電極パターンを形成する電極パターン形成工程と、 前記各基板毎に形成された凹部内で、ダイボンド電極パターン上に発光ダイオード素子を固着するダイボンド工程と、 前記発光ダイオード素子とセカンド電極パターンとをボンディングワイヤで接続するワイヤボンド工程と、 上記集合基板の上面全面にキャスティング又はトランスファモールドによって熱硬化性の透光性樹脂体を成形して発光ダイオード素子やボンディングワイヤを封止する樹脂封止工程と、 上記集合基板を各基板毎にカットして一つ一つの表面実装型発光ダイオードに分割する分割工程とを備えたことを特徴とする表 The upper surface of 2. A collective substrate, a recess forming step of forming a recess in each substrate, the electrode pattern forming step of forming a die bonding electrode pattern and the second electrode pattern on the aggregate substrate of the recess is formed, wherein in a recess formed in each substrate, and the die bonding step of fixing the light emitting diode element on the die bonding electrode pattern, a wire bonding step of connecting the light emitting diode element and the second electrode pattern by bonding wires, the assembly substrate a resin sealing step of sealing the light emitting diode element and the bonding wire by molding the thermosetting light-transmissive resin member by casting or transfer molding the entire upper surface of the one to cut the assembly substrate for each substrate Table characterized in that a dividing step of dividing one on one surface mounted light emitting diode 実装型発光ダイオードの製造方法。 Method for producing a mounted light emitting diode.
JP11481997A 1997-05-02 1997-05-02 Surface mounting-type light-emitting diode and its manufacture Pending JPH10308535A (en)

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Cited By (10)

* Cited by examiner, † Cited by third party
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JP2002009349A (en) * 2000-06-26 2002-01-11 Kanto Kasei Kogyo Kk Surface emission led and its manufacturing method
JP2002270901A (en) * 2001-03-12 2002-09-20 Citizen Electronics Co Ltd Light emitting diode and its manufacturing method
JP2003008071A (en) * 2001-06-22 2003-01-10 Stanley Electric Co Ltd Led lamp using led substrate assembly
KR100604602B1 (en) 2004-05-19 2006-07-24 서울반도체 주식회사 Light emitting diode lens and light emitting diode having the same
KR100613066B1 (en) * 2004-07-09 2006-08-16 서울반도체 주식회사 Light emitting diode package having a monolithic heat sinking slug and method of fabricating the same
JP2006294804A (en) * 2005-04-08 2006-10-26 Sharp Corp Light emitting diode
US7645643B2 (en) 2003-06-06 2010-01-12 Stanley Electric Co., Ltd. Optical semiconductor device method
JP2011507291A (en) * 2007-12-19 2011-03-03 バイエル・マテリアルサイエンス・アクチェンゲゼルシャフトBayer MaterialScience AG Emitter and a method of manufacturing with Leddie
US7960746B2 (en) 2004-01-06 2011-06-14 Samsung Led Co., Ltd. Low resistance electrode and compound semiconductor light emitting device including the same
JP2017085025A (en) * 2015-10-30 2017-05-18 日亜化学工業株式会社 Method of manufacturing a light emitting device and a light-emitting module

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009349A (en) * 2000-06-26 2002-01-11 Kanto Kasei Kogyo Kk Surface emission led and its manufacturing method
JP2002270901A (en) * 2001-03-12 2002-09-20 Citizen Electronics Co Ltd Light emitting diode and its manufacturing method
JP2003008071A (en) * 2001-06-22 2003-01-10 Stanley Electric Co Ltd Led lamp using led substrate assembly
US7645643B2 (en) 2003-06-06 2010-01-12 Stanley Electric Co., Ltd. Optical semiconductor device method
US7960746B2 (en) 2004-01-06 2011-06-14 Samsung Led Co., Ltd. Low resistance electrode and compound semiconductor light emitting device including the same
KR100604602B1 (en) 2004-05-19 2006-07-24 서울반도체 주식회사 Light emitting diode lens and light emitting diode having the same
KR100613066B1 (en) * 2004-07-09 2006-08-16 서울반도체 주식회사 Light emitting diode package having a monolithic heat sinking slug and method of fabricating the same
JP2006294804A (en) * 2005-04-08 2006-10-26 Sharp Corp Light emitting diode
JP4744178B2 (en) * 2005-04-08 2011-08-10 シャープ株式会社 Light emitting diode
JP2011507291A (en) * 2007-12-19 2011-03-03 バイエル・マテリアルサイエンス・アクチェンゲゼルシャフトBayer MaterialScience AG Emitter and a method of manufacturing with Leddie
JP2017085025A (en) * 2015-10-30 2017-05-18 日亜化学工業株式会社 Method of manufacturing a light emitting device and a light-emitting module
US9941451B2 (en) 2015-10-30 2018-04-10 Nichia Corporation Light emitting device and method of manufacturing light emitting module

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