KR20030024283A - A lead frame having radiation of heat, an optical semiconductor device having that, the manufacturing method, and a semiconductor device - Google Patents
A lead frame having radiation of heat, an optical semiconductor device having that, the manufacturing method, and a semiconductor device Download PDFInfo
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- KR20030024283A KR20030024283A KR1020010057346A KR20010057346A KR20030024283A KR 20030024283 A KR20030024283 A KR 20030024283A KR 1020010057346 A KR1020010057346 A KR 1020010057346A KR 20010057346 A KR20010057346 A KR 20010057346A KR 20030024283 A KR20030024283 A KR 20030024283A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Microelectronics & Electronic Packaging (AREA)
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- Led Device Packages (AREA)
Abstract
Description
본 발명은 방열 리드프레임과 이를 이용한 광 반도체 소자 및 그 제조방법과, 반도체 소자에 관한 것으로, 특히 리드프레임에 열경화성수지로 반사판이 형성된 방열블럭을 몰딩성형함으로써 방열블럭에 의해 광다이오드 칩에서 발산되는 열을 효율적으로 방열시킬 수 있도록 하여 반도체 소자의 열적노화를 방지할 수 있는 방열 리드프레임과 이를 이용하여 고휘도를 제공하며 내구성이 우수한 광 반도체 소자 및 그 제공방법과, 상기 리드프레임에 형성하는 방열블럭의 구성을 갖는 방열성능이 우수한 반도체 소자에 관한 것이다.The present invention relates to a heat dissipation lead frame, an optical semiconductor device using the same, and a method for manufacturing the same, and a semiconductor device. In particular, the heat dissipation block is formed from a photodiode chip by molding a heat dissipation block having a reflector plate formed of a thermosetting resin on the lead frame. A heat dissipation leadframe that can effectively dissipate heat to prevent thermal aging of the semiconductor device, an optical semiconductor device that provides high brightness and excellent durability using the same, and a method of providing the same, and a heat dissipation block formed on the lead frame The present invention relates to a semiconductor device having excellent heat dissipation performance.
각종 광원장치에 사용되는 발광소자나 수광소자를 갖는 광 반도체 소자는 광소자로 부터 발생되는 자체열로 인해서 장시간 사용시 열적스트레스가 발생하여 쉽게 노화된다는 문제점이 있다.An optical semiconductor device having a light emitting device or a light receiving device used in various light source devices has a problem in that it is easily aging due to thermal stress when used for a long time due to self heat generated from the optical device.
또한 기존의 광 반도체의 경우는 LED칩과 같은 광 반도체에서 발생 또는 흡수하는 빛의 반사를 위한 반사판을 리드프레임에 형성시켜 제작할때 통상 열 가소성수지로 사출성형하고 있으나, 상기 열 가소성수지의 경우는 방열특성이 낮고, 또한 광반사율이 30% 내외로서 낮기 때문에 광도가 떨어지고 열적 스트레스로 인해 LED의 수명이 단축된다는 문제점이 있다.In addition, in the case of the conventional optical semiconductor, when forming a reflective plate for the reflection of the light generated or absorbed in the optical semiconductor, such as an LED chip in the lead frame is usually injection molded into a thermoplastic resin, but in the case of the thermoplastic resin Since the heat dissipation characteristics are low, and the light reflectance is about 30% or lower, there is a problem that the brightness is lowered and the life of the LED is shortened due to thermal stress.
그러나 상기와 같은 반사판은 사출로 성형함에 따라 반사율이 좋은 충전물을 사용할 수 없기 때문에 그 개선이 쉽지않다.However, the reflection plate as described above is not easy to improve because it can not be used in the injection molding the good reflectance.
본 발명은 상기와 같은 종래의 리드프레임과 광 반도체 소자가 갖는 문제점을 해결하기 위해서 안출한 것으로서, 특히 방열특성과 광반사율이 우수한 방열블럭을 형성한 방열 리드프레임과 이를 이용한 광 반도체 소자 및 그 제조방법의 제공을 그 목적으로 한다.The present invention has been made in order to solve the problems of the conventional lead frame and the optical semiconductor device as described above, in particular, a heat radiation lead frame having a heat radiation block excellent in heat radiation characteristics and light reflectivity, and an optical semiconductor device using the same and its manufacture The purpose is to provide a method.
또한 본 발명은 방열특성과 광반사율이 우수한 방열블럭을 구비하는 반도체 소자의 제공을 그 목적으로 한다.Another object of the present invention is to provide a semiconductor device having a heat dissipation block having excellent heat dissipation characteristics and light reflectance.
이와 같은 목적은 다수의 리드와 광다이오드가 접착되는 방열판으로 형성되는기초프레임과, 상기기초프레임의 방열판에 트랜스퍼 몰드(Transfer Mold)로 성형되어 형성되되 중앙이 하부로 함몰되어 그 함몰부 표면이 반사판을 형성하고 정중앙의 하부는 통개되어 방열판의 상면이 노출되는 방열블럭으로 구성되는 방열 리드프레임 및 이를 이용하여 달성될 수 있는 바, 이하 첨부된 도면을 참조로 하여 상세히 설명한다.This purpose is formed of a base frame formed of a heat sink to which a plurality of leads and photodiodes are bonded, and formed by a transfer mold on a heat sink of the base frame, the center of which is recessed to the bottom so that the surface of the recess is reflected. Formed and the lower portion of the center of the heat radiating lead frame consisting of a heat dissipation block is exposed to the top surface of the heat sink and bar can be achieved using the bar, will be described in detail with reference to the accompanying drawings.
도1a,도1b는 본 발명에 따른 방열 리드프레임의 기초프레임의 평면도 및 종단면도Figure 1a, Figure 1b is a plan view and a longitudinal cross-sectional view of the base frame of the heat dissipation lead frame according to the present invention
도2a,도2b는 본 발명에 따른 방열 리드프레임의 기초프레임의 다른 실시예에 따른 평면도 및 종단면도Figure 2a, Figure 2b is a plan view and a longitudinal cross-sectional view according to another embodiment of the base frame of the heat dissipation lead frame according to the present invention
도3은 본 발명에 따른 방열 리드프레임을 나타내는 평면도Figure 3 is a plan view showing a heat dissipation lead frame according to the present invention
도4는 도3의 종단면도4 is a longitudinal cross-sectional view of FIG.
도5는 본 발명의 제2공정상태를 나타내는 평면도5 is a plan view showing a second process state of the present invention.
도6은 본 발명의 제2공정상태를 나타내는 종단면도6 is a longitudinal sectional view showing a second process state of the present invention;
도7은 본 발명의 제3공정상태를 나타내는 평면도7 is a plan view showing a third process state of the present invention.
도8은 본 발명의 제3공정상태를 나타내는 종단면도8 is a longitudinal sectional view showing a third process state of the present invention;
도9는 본 발명에 따른 광반도체 소자의 전체 사시도9 is an overall perspective view of an optical semiconductor device according to the present invention.
도10은 본 발명에 따른 광반도체 소자의 다른 변형예의 사시도10 is a perspective view of another modification of the optical semiconductor element according to the present invention;
도11은 도10의 종단면도Figure 11 is a longitudinal cross-sectional view of Figure 10
〈 도면의 주요부분에 대한 부호의 설명 〉<Description of the reference numerals for the main parts of the drawings>
1: 렌즈 2: 방열 에폭시1: lens 2: heat resistant epoxy
3: 방열판(Heatsink) 4: 리드(Lead)3: Heatsink 4: Lead
5: 고정홀(Joint Hole) 6:기초프레임(Base Frame)5: Joint Hole 6: Base Frame
7: 반사판 8: 광다이오드 칩7: reflector 8: photodiode chip
9: 골드 와이어(Gold Wire) 10: 코팅층9: Gold Wire 10: Coating Layer
도1a, 도1b, 도2a 및 도2b는 본 발명에 따른 방열 리드프레임을 제조하기 위한 원판의 상태를 보여준다.Figures 1a, 1b, 2a and 2b shows the state of the disc for producing a heat radiation lead frame according to the present invention.
상기 도면에서 보는 바와 같이 본 발명에 따른 방열 리드프레임은 다수의 리드(4)와 광다이오드 칩과 같은 광소자 칩(8)이 접착되는 방열판(3)으로 형성되는기초프레임(6)을 기본 프레임으로 하여 구성되게 된다.As shown in the drawing, the heat dissipation lead frame according to the present invention has a base frame 6 formed of a heat dissipation plate 3 to which a plurality of leads 4 and an optical device chip 8 such as a photodiode chip are bonded. It will be configured as.
상기기초프레임(6)은 통상의 주물을 통한 제조 또는 단조등에 의해서도 제조될 수 있으며, 그 제조방법은 통상적인 방법을 사용할 수 있다.The base frame 6 may also be manufactured by conventional casting or forging, and the manufacturing method may use a conventional method.
도3 및 도4는 본 발명에 따른 방열 리드프레임을 도시하고 있다. 상기 도면에서 보는 바와 같이 본 방열 리드프레임은 다수의 리드(4)와 광반도체 칩이 접착되는 방열판(3)으로 형성되는기초프레임(6)과, 상기기초프레임의 방열판(3)에 트랜스퍼 몰드(Transfer Mold)로 성형되어 형성되되 중앙이 하부로 함몰되어 그 함몰부 표면이 반사판(7)을 형성하고 정중앙의 하부는 통개되어 방열판(3)의 상면이 노출되는 방열블럭(2)으로 구성된다.3 and 4 illustrate a heat dissipation leadframe according to the present invention. As shown in the figure, the heat dissipation lead frame includes a base frame 6 formed of a heat dissipation plate 3 to which a plurality of leads 4 and an optical semiconductor chip are bonded, and a transfer mold (3) to the heat dissipation plate 3 of the base frame. It is formed by a transfer mold, the center of which is recessed to the lower portion of the recessed portion forms a reflecting plate (7) and the lower portion of the center is composed of a heat dissipation block (2) exposed the upper surface of the heat sink (3).
상기 반사판(7)의 정 중앙부는 통개되어 방열판(3) 상면이 노출되게 되며, 이곳에 광 반도체 소자가 부착된다.The central portion of the reflective plate 7 is opened so that the top surface of the heat sink 3 is exposed, and an optical semiconductor element is attached thereto.
본 발명에 따른 방열 리드프레임의 특징은 반사판을 갖는 방열블럭을 상기 원판에 형성한 것이며, 또한 상기 방열블럭(2)은 열 경화성 수지로 성형한 것을 특징으로 한다.The heat dissipation lead frame according to the present invention is characterized in that a heat dissipation block having a reflecting plate is formed on the disc, and the heat dissipation block 2 is formed of a thermosetting resin.
상기 열 경화성 수지는 에폭시 수지로 하는 것이 더욱 바람직하다.As for the said thermosetting resin, it is more preferable to set it as an epoxy resin.
특히 본 발명에서는 상기 방열블럭의 재료로 사용되는 열 경화성 수지는 TiO₂와 Silica를 함유하도록 하여(바람직하게는 70% 이상) 내열성과 방열율을 높이고 반사율을 증대시키는 것이 바람직하다. (상기 TiO₂와 Silica는 상기 방열블럭의 반사판에만 함유시킬 수 도 있다. 이 경우에는 상기 반사판을 별개로 형성하여 방열블럭에 접착시킬 수 도 있을 것이다.)In particular, in the present invention, it is preferable that the thermosetting resin used as the material of the heat dissipation block contains TiO 2 and Silica (preferably 70% or more) to increase heat resistance and heat dissipation rate and increase reflectance. (The TiO₂ and Silica may be contained only in the reflecting plate of the heat dissipating block. In this case, the reflecting plate may be separately formed and adhered to the heat dissipating block.)
상기와 같이 성형된 방열블럭은 방열특성이 매우 우수하며, 또한 상기 트랜스퍼 성형기법을 사용하여 열경화성 수지로된 반사판을 달성하게 되므로 광 반사율이 종래의 사출물보다 3배이상 증대되게 된다.The heat dissipation block formed as described above is very excellent in heat dissipation characteristics, and also by using the transfer molding method to achieve a reflector made of a thermosetting resin, the light reflectance is increased by three times or more than conventional injection molding.
상기와 같은 우수한 특성을 갖는 방열 리드프레임을 이용하여 광 반도체 소자를 제조하는 과정을 이하에 설명한다.A process of manufacturing the optical semiconductor device using the heat dissipation lead frame having the excellent characteristics as described above will be described below.
본 발명에 따른 광 반도체 소자의 제조방법은,Method for manufacturing an optical semiconductor device according to the present invention,
상기 도1a 내지 도2b에서와 같이, 다수의 리드(4)와 광다이오드가 접착되는 방열판(3)으로 형성되는기초프레임(6)을 성형하는 제1공정과,1A to 2B, a first process of forming a base frame 6 formed of a heat sink 3 to which a plurality of leads 4 and a photodiode are bonded, and
도3 및 도4에서 보는 바와 같이, 상기 제1공정에 의한기초프레임(6)의 방열판(3)에 트랜스퍼 성형(Transfer Molding)을 통하여 열경화성 수지로 중앙에 함몰된 반사판(7)이 형성된 방열블럭(2)을 성형하는 제2공정과,3 and 4, a heat dissipation block in which the heat dissipation plate 3 of the base frame 6 according to the first process is formed with a reflective plate 7 recessed in the center with a thermosetting resin through transfer molding. (2) forming the second step;
도5 및 도6에서 보는 바와 같이, 상기 제2공정에 의한 방열블럭(2)의 반사판 중앙에 노출된 방열판(3) 위에 광다이오드(8)를 접착시키는 제3공정과,5 and 6, a third step of adhering the photodiode 8 to the heat sink 3 exposed at the center of the reflecting plate of the heat dissipation block 2 according to the second step;
도7 및 도8에서 보는 바와 같이, 상기 제3공정에 의한 광다이오드(8)와 리드(4)를 골드와이어(9)로 연결하고, 이 위에 코팅층(10)을 성형하여 밀봉하는 제4공정과,As shown in Figs. 7 and 8, a fourth step of connecting the photodiode 8 and the lead 4 according to the third step with a gold wire 9 and forming and sealing the coating layer 10 thereon is carried out. and,
도7 및 도8에서 보는 바와 같이, 상기 제4공정의 코팅층(10) 위에 렌즈(1)를 부착하는 제5공정으로 구성되는 것을 특징으로 한다.As shown in Figures 7 and 8, it is characterized in that the fifth step of attaching the lens 1 on the coating layer 10 of the fourth step.
물론 상기 제1공정의기초프레임은 성형상의 편리를 위해서 다수개가 일렬로 연결된 원판으로 형성하여 사용할 수 있음은 물론이며, 이러한 원판형태의 것을 사이 제5공정 후에 각각의 연결부를 절단하여 독립된 광 반도체 소자들로 완성하는 것이 바람직 할 것이다.Of course, the basic frame of the first process can be used by forming a plurality of disks connected in a row for convenience of molding, of course, the independent optical semiconductor device by cutting each connection portion after the fifth process between the disk type It would be desirable to complete with
상기 제3공정에서 방열판(3) 위에 광다이오드(8)를 접착시 Ag접착재를 사용하는 것이 바람직하다.In the third process, it is preferable to use an Ag adhesive when bonding the photodiode 8 on the heat sink 3.
상기 제5공정의 렌즈(1)는 UV(자외선 차단)렌즈를 사용하는 것이 바람직하다.The lens 1 of the fifth step is preferably a UV (ultraviolet ray blocking) lens.
상기 제4공정에서의 코팅층(10)은 실리콘이나 에폭시수지로 형성할 수 있다.The coating layer 10 in the fourth process may be formed of silicon or epoxy resin.
상기와 같은 방법을 통하여 제조된 광 반도체 소자는 도8 내지 도11에서 보는 바와 같이 다수의 리드(4)와 광반도체 칩이 접착되는 방열판(3)으로 형성되는기초프레임(6)과 상기기초프레임의 방열판(3)에 트랜스퍼 몰드(Transfer Mold)로 성형되어 형성되되 중앙이 하부로 함몰되어 그 함몰부 표면이 반사판(7)을 형성하고 정중앙의 하부는 통개되어 방열판(3)의 상면이 노출되는 방열블럭(2)으로 구성된 방열 리드프레임이 형성되고, 상기 방열 리드프레임의 방열블럭(2)의 중앙의 노출된 방열판 위에 LED칩 등의 광다이오드 칩(8)이 부착되고, 상기 광다이오드 칩(8)과 리드(4)를 연결하도록 골드 와이어(9)가 부착되고, 상기 광다이오드 칩(8)의 상부에는 코팅층(10)이 형성되고, 상기 코팅층(10) 위에 렌즈(1)가 부착되어서 형성된 구조이다.As shown in FIGS. 8 to 11, the optical semiconductor device manufactured by the method described above includes a base frame 6 and a base frame formed of a heat sink 3 to which a plurality of leads 4 and an optical semiconductor chip are bonded. It is formed by a transfer mold (Transfer Mold) of the heat sink (3) of the recess is formed in the center of the lower portion of the recessed surface forms a reflecting plate (7) and the lower portion of the center of the center is opened to expose the top surface of the heat sink (3) A heat dissipation lead frame composed of a heat dissipation block 2 is formed, an optical diode chip 8 such as an LED chip is attached to an exposed heat dissipation plate in the center of the heat dissipation block 2 of the heat dissipation lead frame, and the photodiode chip ( A gold wire 9 is attached to connect the lead 8 to the lead 4, a coating layer 10 is formed on the photodiode chip 8, and a lens 1 is attached on the coating layer 10. Formed structure.
또한 본 발명의 특징적인 기술사상에 속하는 상기 열 경화성 수지로 반사판을 구성하는 것은 상기 특정의 광 반도체 소자에 한정되는 것은 아니며, 열이 발생되는 반도체 소자의 열을 흡수하여 방열하는 방열특성을 향상시키기 위해서 상기반도체 소자에 상기와 같은 반사판을 부착시킨 반도체 소자를 구성할 수 있으며, 이 또한 본 발명의 기술적 사상에 속한다.In addition, constituting the reflector with the thermosetting resin belonging to the characteristic technical idea of the present invention is not limited to the specific optical semiconductor device, and improves heat radiation characteristics for absorbing and radiating heat of a semiconductor device in which heat is generated. To this end, a semiconductor device having the above-described reflective plate attached to the semiconductor device can be configured, which also belongs to the technical idea of the present invention.
이상에서와 같이 본 발명은 열경화성 수지로 트랜스퍼 성형한 방열반사판을 구비하여 방열효과와 광 반사율을 획기적으로 향상시킴으로써 반도체 패키지의 신뢰성을 크게 향상시키게 된다.As described above, the present invention is provided with a heat radiation reflector plate formed of a thermosetting resin to significantly improve the heat dissipation effect and light reflectance, thereby greatly improving the reliability of the semiconductor package.
또한 본 발명에 따른 광 반도체 소자는 열적 스트레스에 의한 LED의 수명 단축문제를 근본적으로 해결하였으며, 종래의 기술에서 보증할 수 있는 10만 시간의 수명을 2~3배 이상 연장함으로서 반영구적으로 사용할 수 있는 램프를 제공할 수 있게된다.In addition, the optical semiconductor device according to the present invention has fundamentally solved the problem of shortening the life of the LED due to thermal stress, and can be used semi-permanently by extending the life of 100,000 hours that can be guaranteed by the prior art by 2-3 times or more. It is possible to provide a lamp.
또한 본 발명에서는 반사판을 트렌스퍼 성형 공정을 통하여 제조하므로 광의 반사율이 종래의 사출물보다 3배이상 높게 됨으로서 고휘의 광원을 제공할 수 있으면서 이와 함께 열적 스트레스를 극소화 하여 내구성을 크게 향상시키게 된다.In addition, in the present invention, since the reflector is manufactured through a transfer molding process, the reflectance of light is higher than three times higher than that of a conventional injection molding, thereby providing a high brightness light source and minimizing thermal stress, thereby greatly improving durability.
Claims (10)
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| KR1020010057346A KR20030024283A (en) | 2001-09-17 | 2001-09-17 | A lead frame having radiation of heat, an optical semiconductor device having that, the manufacturing method, and a semiconductor device |
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| KR1020010057346A KR20030024283A (en) | 2001-09-17 | 2001-09-17 | A lead frame having radiation of heat, an optical semiconductor device having that, the manufacturing method, and a semiconductor device |
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| KR20030024283A true KR20030024283A (en) | 2003-03-26 |
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| KR101415559B1 (en) * | 2012-12-04 | 2014-07-04 | (주)파트론 | Non-contact infrared temperature sensor module |
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