JP2007142476A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
JP2007142476A
JP2007142476A JP2007047340A JP2007047340A JP2007142476A JP 2007142476 A JP2007142476 A JP 2007142476A JP 2007047340 A JP2007047340 A JP 2007047340A JP 2007047340 A JP2007047340 A JP 2007047340A JP 2007142476 A JP2007142476 A JP 2007142476A
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light
emitting element
light emitting
package
base
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Mitsuo Yanagisawa
美津夫 柳沢
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Abstract

<P>PROBLEM TO BE SOLVED: To improve light reflection characteristics on the light reflection surface of a package; and to reduce a change in light intensity, a light radiation angle, and light intensity distribution due to a temperature change. <P>SOLUTION: A light-emitting device comprises a light-emitting element 5, the package 1 for mounting the light-emitting element 5, and a heat sink 6 provided on the lower surface of the package 1. The package 1 comprises a mount 2a of the light-emitting element 5, and a light reflection surface for surrounding the light-emitting element 5. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発光素子が搭載された発光装置に関するものである。   The present invention relates to a light emitting device on which a light emitting element is mounted.

従来、発光ダイオード(LED)や半導体レーザ(LD)等の発光素子を用いた発光装置は、今後さらなる低消費電力化や長寿命化がすすむものと予測されていることから注目されており、近年各種インジケーター、光センサ、ディスプレイ、ホトカプラ、バックライト、光プリンタヘッド等の種々の分野で使用され始めている。従来の発光素子を搭載するための発光素子収納用パッケージ(以下、単にパッケージともいう)の断面図を図2に示す。   Conventionally, light-emitting devices using light-emitting elements such as light-emitting diodes (LEDs) and semiconductor lasers (LDs) have been attracting attention because they are expected to further reduce power consumption and extend their lifetime in the future. It has begun to be used in various fields such as various indicators, optical sensors, displays, photocouplers, backlights, and optical printer heads. A cross-sectional view of a light emitting element storage package (hereinafter also simply referred to as a package) for mounting a conventional light emitting element is shown in FIG.

図2に示すように、従来のパッケージ11は、一般に各種樹脂やセラミックスなどの材料から成る基体12を有する。この基体12には、タングステンやモリブデン−マンガン等を含む導体ペーストを塗布し焼成して成るメタライズ層を形成し、その上にメッキ法によりNiメッキ層やAuメッキ層を施した配線導体13が形成されている。   As shown in FIG. 2, the conventional package 11 has a base 12 generally made of a material such as various resins or ceramics. A metallized layer is formed on the substrate 12 by applying and baking a conductive paste containing tungsten, molybdenum-manganese, or the like, and a wiring conductor 13 is formed on which a Ni plating layer or an Au plating layer is applied by plating. Has been.

また、配線導体13は、発光素子15を搭載する搭載部12aに、金(Au)や錫(Sn)−鉛(Pn)合金等から成る半田バンプ17を介して発光素子15を電気的に接続するための電極を有しており、配線導体13と半田バンプ17を介して、パッケージ11内の発光素子15に外部から駆動電流が供給される。   The wiring conductor 13 is electrically connected to the mounting portion 12a on which the light emitting element 15 is mounted via a solder bump 17 made of gold (Au), tin (Sn) -lead (Pn) alloy, or the like. The drive current is supplied from the outside to the light emitting element 15 in the package 11 through the wiring conductor 13 and the solder bump 17.

また基体12は、パッケージ11内部側の一方の主面に、中央部に上下面を貫通する貫通孔14aを有する、各種樹脂やセラミックスから成る枠体14が設けられている。この枠体14は、基体12に700〜900℃の融点を有する銀(Ag)−銅(Cu)等のロウ材や樹脂接着剤、500℃以下で溶融する低融点ガラスなどにより固定される。   The base body 12 is provided with a frame body 14 made of various resins and ceramics having a through hole 14a penetrating the upper and lower surfaces in the center portion on one main surface inside the package 11. The frame body 14 is fixed to the base 12 by a brazing material such as silver (Ag) -copper (Cu) having a melting point of 700 to 900 ° C., a resin adhesive, a low melting point glass melting at 500 ° C. or less, and the like.

また、発光素子15を保護するため、枠体14の内側に発光素子15を覆うように透明樹脂(図示せず)が設けられる。この透明樹脂は熱硬化性のエポキシ樹脂やシリコーン樹脂等を加熱硬化させることにより形成される。また、透明樹脂に発光素子15の光を吸収し波長変換する少なくとも1つ以上の蛍光体を混入することにより、所望の色の光を取り出すことができる。さらに、透明樹脂は、発光素子15をパッケージ11に強固に密着させる働きも有する。これにより、発光素子15を収納した発光装置となる。   Further, in order to protect the light emitting element 15, a transparent resin (not shown) is provided inside the frame 14 so as to cover the light emitting element 15. This transparent resin is formed by heat-curing a thermosetting epoxy resin or silicone resin. Further, by mixing at least one phosphor that absorbs light of the light emitting element 15 and converts the wavelength into the transparent resin, light of a desired color can be extracted. Further, the transparent resin also has a function of firmly attaching the light emitting element 15 to the package 11. As a result, a light-emitting device that houses the light-emitting element 15 is obtained.

この発光装置は、外部電気回路から供給される駆動電流によって発光素子15が発光する。その用途としては、各種インジケーター、光センサ、ディスプレイ、ホトカプラ、バックライト、光プリンタヘッドなどがある。   In this light emitting device, the light emitting element 15 emits light by a drive current supplied from an external electric circuit. Applications include various indicators, optical sensors, displays, photocouplers, backlights, and optical printer heads.

近年、この発光装置を照明用として利用するようになってきており、高輝度、放熱性の点でより高特性のものが要求されている。また、照明用として使用する場合には寿命が重要な問題となるため、長寿命な発光装置が要求されている。   In recent years, this light-emitting device has been used for illumination, and a device having higher characteristics in terms of high luminance and heat dissipation is required. In addition, when used for illumination, the lifetime is an important issue, and thus a long-life light emitting device is required.

そこで、近時、発光装置の発光輝度を向上させるために、枠体14や基体12がより反射率の高い材料から成る構成とすることが多い。例えば、発光素子15の光を反射させる枠体14の材料にAgやAlからなる反射率の高い金属を使用したり、それらの金属を枠体14の内周面に被着させることによって、高輝度の発光装置とすることが提案されている。   Therefore, recently, in order to improve the light emission luminance of the light emitting device, the frame body 14 and the base body 12 are often made of a material having a higher reflectance. For example, by using a highly reflective metal such as Ag or Al as the material of the frame body 14 that reflects the light of the light emitting element 15, or by depositing these metals on the inner peripheral surface of the frame body 14, It has been proposed to provide a light emitting device with brightness.

従来のパッケージ11では、高輝度化には十分に対応できるものの、輝度を上げるために発光素子15の入力パワーを上げると、発光素子15から出る熱により安定した光強度、光の放射角度、光強度分布が得られないといった新たな問題がでてきている。また、放熱性が劣化すると、発光素子15の温度が上昇し、発光素子15の活性層から出射される光の取り出し効率、いわゆる内部量子効率が著しく劣化する。また、発光素子15とパッケージ11に歪みが生じ、パッケージ11から一定の距離を置いたところで測定される光放射角度および光強度分布が所望の値およびパターンからずれることとなる。光強度分布は単一の光束(光ビーム)またはそれらの集合体で表されるものであり、パッケージ11の歪みにより光束のパターンが一定にならず不安定となる。このように、発光装置が局部照明の用途等に使用される場合、光の放射角度、光強度分布は重要な問題である。   Although the conventional package 11 can sufficiently cope with high brightness, if the input power of the light emitting element 15 is increased to increase the brightness, the light intensity stabilized by the heat emitted from the light emitting element 15, the light emission angle, the light There is a new problem that the intensity distribution cannot be obtained. Further, when the heat dissipation is deteriorated, the temperature of the light emitting element 15 is increased, and the extraction efficiency of light emitted from the active layer of the light emitting element 15, that is, so-called internal quantum efficiency is remarkably deteriorated. Further, the light emitting element 15 and the package 11 are distorted, and the light emission angle and the light intensity distribution measured at a certain distance from the package 11 deviate from desired values and patterns. The light intensity distribution is represented by a single light beam (light beam) or an aggregate thereof, and the pattern of the light beam becomes unstable due to distortion of the package 11 and becomes unstable. As described above, when the light-emitting device is used for local illumination or the like, the light emission angle and the light intensity distribution are important problems.

したがって、本発明は、かかる従来の問題点に鑑みて完成されたものであり、その目的は、パッケージの光反射面における光反射特性を向上させるとともに、温度変化による光強度、光の放射角度、光強度分布の変化を低減させることにある。   Therefore, the present invention has been completed in view of such conventional problems, and its purpose is to improve the light reflection characteristics on the light reflection surface of the package, and to improve the light intensity due to temperature change, the light emission angle, It is to reduce the change of the light intensity distribution.

本発明は、発光素子と、発光素子が搭載されるパッケージと、パッケージの下面に設けられた放熱板とを備えている。パッケージは、発光素子の搭載部と、発光素子を囲む光反射面とを有している。   The present invention includes a light emitting element, a package on which the light emitting element is mounted, and a heat dissipation plate provided on the lower surface of the package. The package has a light emitting element mounting portion and a light reflecting surface surrounding the light emitting element.

本発明は、発光素子と、発光素子が搭載されるパッケージと、パッケージの下面に設けられた放熱板とを備えていることにより、発光素子によって発生された光をパッケージの光反射面で良好に反射させ外部により均一に効率よく放射させるとともに、温度変化による光強度、光の放射角度、光強度分布の変化が低減される。   The present invention includes a light emitting element, a package on which the light emitting element is mounted, and a heat sink provided on the lower surface of the package, so that light generated by the light emitting element can be favorably reflected on the light reflecting surface of the package. Reflecting and radiating uniformly and efficiently to the outside, changes in light intensity, light emission angle, and light intensity distribution due to temperature changes are reduced.

本発明の発光素子収納用パッケージについて以下に詳細に説明する。図1は本発明のパッケージについて実施の形態の一例を示す断面図であり、図1において、2は基体、4は枠体、6は放熱板であり、これらで発光素子5を収容するためのパッケージ1が主に構成されている。   The light emitting element storage package of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of the package of the present invention. In FIG. 1, 2 is a base, 4 is a frame, and 6 is a heat radiating plate. The package 1 is mainly configured.

本発明のパッケージ1は、上側主面の中央部に発光素子5が搭載される搭載部2aを有するとともに搭載部2aから外側にかけて導出される配線導体3が形成された絶縁体から成る基体2と、基体2の上側主面の外周部に搭載部2aを囲むように取着された、内周面が上方に向かって外側に広がる傾斜面とされた金属から成る枠体4と、基体2の下側主面の中央部に接合された金属から成る放熱板6とを具備している。   A package 1 according to the present invention includes a base 2 made of an insulator having a mounting portion 2a on which a light emitting element 5 is mounted at the center of the upper main surface, and a wiring conductor 3 led out from the mounting portion 2a to the outside. A frame 4 made of a metal attached to an outer peripheral portion of the upper main surface of the base body 2 so as to surround the mounting portion 2a and having an inner peripheral surface that is an inclined surface extending outward and upward; And a heat sink 6 made of metal joined to the center of the lower main surface.

本発明における基体2は、例えば酸化アルミニウム質焼結体(アルミナセラミックス),窒化アルミニウム質焼結体,ムライト質焼結体,ガラスセラミックス等のセラミックスや、エポキシ樹脂等の樹脂から成る絶縁体であり、発光素子5を支持し搭載するための支持部材として機能するとともに、その上側主面の中央部には発光素子5を搭載する搭載部2aが設けられている。   The substrate 2 in the present invention is an insulator made of ceramics such as an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, a glass ceramic, or a resin such as an epoxy resin. In addition to functioning as a support member for supporting and mounting the light emitting element 5, a mounting portion 2a for mounting the light emitting element 5 is provided at the center of the upper main surface thereof.

そして、基体2は、搭載部2aの近傍からパッケージ外部に電気的な導通を行なう、タングステン(W),モリブデン(Mo),マンガン(Mn),銅(Cu)等のメタライズ層から成る配線導体3が形成されている。この配線導体3は、例えば、W等の粉末に有機溶剤、溶媒を添加混合して得た金属ペーストを、基体2となるセラミックグリーンシートに所定パターンに印刷塗布し、複数のセラミックグリーンシートを積層して焼成することによって形成される。配線導体3の表面には、酸化防止のためと発光素子5を低融点ロウ材等の半田バンプ7で強固に接続するために、厚さ0.5〜9μmのNi(ニッケル)層や厚さ0.5〜5μmのAu層等の金属層をメッキ法により被着させておくのが良い。   The substrate 2 is a wiring conductor 3 made of a metallized layer such as tungsten (W), molybdenum (Mo), manganese (Mn), copper (Cu), etc., which conducts electrical conduction from the vicinity of the mounting portion 2a to the outside of the package. Is formed. For this wiring conductor 3, for example, a metal paste obtained by adding and mixing an organic solvent and a solvent to a powder such as W is printed and applied in a predetermined pattern on a ceramic green sheet to be a base 2, and a plurality of ceramic green sheets are laminated. And then fired. On the surface of the wiring conductor 3, in order to prevent oxidation and to firmly connect the light emitting element 5 with solder bumps 7 such as a low melting point brazing material, a Ni (nickel) layer having a thickness of 0.5 to 9 μm and a thickness of 0.5 to It is preferable to deposit a metal layer such as a 5 μm Au layer by a plating method.

また、基板2の上側主面には、基板2の下側主面への光の透過を有効に抑制するとともに、基板2の上方に効率よく光を反射させるために、配線導体3に短絡しないようにしてAl,Ag,Au,Cu,Pt等の金属反射層を蒸着法や各種メッキ法により形成することが好ましい。   In addition, the upper main surface of the substrate 2 is not short-circuited to the wiring conductor 3 in order to effectively suppress the transmission of light to the lower main surface of the substrate 2 and to reflect light efficiently above the substrate 2. Thus, it is preferable to form a metal reflective layer such as Al, Ag, Au, Cu, Pt by vapor deposition or various plating methods.

本発明の配線導体3は、AuやSn−Pb半田等の低融点ロウ材から成る半田バンプ7により発光素子5との電気的な接続が行なわれる電極パッドを有するとともに、発光素子5とパッケージ1外部との電気的な導通を行なう。そして、発光素子5が作動した際に、発光素子5の電極付近で発生する熱が半田バンプ7を介して配線導体3に伝熱するとともに、基体2の内層に形成された配線導体3を介して基体2全体に拡散される。その結果、基体2の内部を伝達する熱が十分に拡散されて、基体2の熱抵抗が低下するとともに基体2の下側主面の全体に熱が分布して効率よく放熱板6に伝達する。   The wiring conductor 3 of the present invention has electrode pads that are electrically connected to the light emitting element 5 by solder bumps 7 made of a low melting point solder such as Au or Sn—Pb solder, and the light emitting element 5 and the package 1. Conduct electrical continuity with the outside. When the light emitting element 5 is activated, heat generated in the vicinity of the electrodes of the light emitting element 5 is transferred to the wiring conductor 3 through the solder bumps 7 and also through the wiring conductor 3 formed in the inner layer of the base 2. And diffused throughout the substrate 2. As a result, the heat transmitted through the inside of the base 2 is sufficiently diffused, the thermal resistance of the base 2 is lowered, and the heat is distributed over the entire lower main surface of the base 2 and efficiently transferred to the heat sink 6. .

本発明の放熱板6は、鉄(Fe)−ニッケル(Ni)−コバルト(Co)合金やCu−W合金等の金属から成り、そのインゴットに圧延加工や打ち抜き加工等の従来周知の金属加工を施すことによって所定形状に形成され製作される。とりわけ、放熱効果を高めるためには熱伝導性に優れたCu−W合金からなることが好ましい。また、放熱板6は、その表面に耐食性に優れかつロウ材との濡れ性に優れる金属、具体的には厚さ0.5〜9μmのNi層と、厚さ0.5〜9μmのAu層とを順次メッキ法により被着させておくのがよく、放熱板6が酸化腐食されるのを有効に防止できる。   The heat sink 6 of the present invention is made of a metal such as iron (Fe) -nickel (Ni) -cobalt (Co) alloy or Cu-W alloy, and the ingot is subjected to conventionally known metal processing such as rolling or punching. By applying, it is formed into a predetermined shape and manufactured. In particular, in order to enhance the heat dissipation effect, it is preferable to be made of a Cu—W alloy having excellent thermal conductivity. Further, the heat sink 6 is successively plated with a metal having excellent corrosion resistance and wettability with the brazing material, specifically, a Ni layer having a thickness of 0.5 to 9 μm and an Au layer having a thickness of 0.5 to 9 μm. It is preferable to deposit it by the method, and it is possible to effectively prevent the heat sink 6 from being oxidized and corroded.

また、放熱板6は、その熱伝導率が100W/m・K以上であることがよい。これにより、発光素子5から放熱板6を介した外部回路基板への放熱性が向上し、発光素子5に入力できる駆動電流を大きくすることができる。   The heat dissipation plate 6 preferably has a thermal conductivity of 100 W / m · K or more. Thereby, the heat dissipation from the light emitting element 5 to the external circuit board via the heat sink 6 is improved, and the drive current that can be input to the light emitting element 5 can be increased.

すなわち、100W/m・K以上では、駆動電流が20mAと大きい場合であっても発光素子5のジャンクション温度(所定の駆動電流を入力した際の発光素子5の最高温度で低い方がよい)が50℃以下になり、1万時間を超えて正常かつ高輝度を確保して発光させることができるとともに、大きな駆動電流を入力することができ、発光素子5の輝度を向上させることができる。また、発光素子5が作動する際のパッケージ1全体の温度上昇が有効に抑制されて、基体2と枠体4との熱膨張差による変形や歪みが有効に抑制される。その結果、基体2および枠体4の中心軸と、発光素子5の光強度が最大となる光軸との位置ズレが抑制され、発光素子5の光が枠体4の内周面で反射し所望の放射角度と強度分布でパッケージ1外部へ効率よく出射されるとともに輝度が向上する。さらに、基体2と枠体4との接合界面で生じる、熱膨張係数差に起因する熱応力が低下し、基体2と枠体4との接合界面で生じるクラックや剥がれを有効に抑制できる。また、発光素子5の温度上昇が有効に抑制されることから、温度上昇に伴う発光素子5の活性層からの光の取り出し効率の低下が抑制され、発光装置は長期にわたり正常かつ安定に作動できる。   That is, at 100 W / m · K or higher, the junction temperature of the light-emitting element 5 (the lower the maximum temperature of the light-emitting element 5 when a predetermined drive current is input is better) even when the drive current is as large as 20 mA. The temperature is 50 ° C. or lower, and it is possible to emit light while ensuring normal and high luminance over 10,000 hours, and it is possible to input a large driving current and improve the luminance of the light emitting element 5. Further, the temperature rise of the entire package 1 when the light emitting element 5 operates is effectively suppressed, and deformation and distortion due to the difference in thermal expansion between the base 2 and the frame 4 are effectively suppressed. As a result, the positional deviation between the central axis of the base 2 and the frame 4 and the optical axis at which the light intensity of the light emitting element 5 is maximized is suppressed, and the light of the light emitting element 5 is reflected by the inner peripheral surface of the frame 4. The light is efficiently emitted to the outside of the package 1 with a desired radiation angle and intensity distribution, and the luminance is improved. Furthermore, the thermal stress caused by the difference in thermal expansion coefficient generated at the bonding interface between the base body 2 and the frame body 4 is reduced, and cracks and peeling generated at the bonding interface between the base body 2 and the frame body 4 can be effectively suppressed. In addition, since the temperature rise of the light emitting element 5 is effectively suppressed, a decrease in light extraction efficiency from the active layer of the light emitting element 5 accompanying the temperature rise is suppressed, and the light emitting device can operate normally and stably over a long period of time. .

なお、チップジャンクション温度とは、所定の駆動電流(20mA等)を入力した際のチップ(発光素子5)の温度であり、なるべく低い方がよい。すなわち、放熱性を高めないと発光素子5に熱がこもり、チップジャンクション温度が下がらないため、放熱性を高めてチップジャンクション温度を下げると、その分駆動電流が流せることになる。一般に、65℃以上になれば発光素子5の限界を超えていると言われており、それ以上駆動電流を入力できなくなる。   Note that the chip junction temperature is the temperature of the chip (light-emitting element 5) when a predetermined drive current (20 mA or the like) is input, and is preferably as low as possible. That is, if the heat dissipation property is not increased, heat is accumulated in the light emitting element 5 and the chip junction temperature does not decrease. Therefore, if the heat dissipation property is increased and the chip junction temperature is decreased, a drive current can flow accordingly. In general, it is said that when the temperature is 65 ° C. or higher, the limit of the light-emitting element 5 is exceeded, and no further drive current can be input.

放熱板6の熱伝導率が100W/m・K未満では、例えば駆動電流が20mAであると発光素子5のチップジャンクション温度が65℃以上になり、発光素子5の発光効率が著しく劣化するとともに熱的負荷によって発光素子5を被覆するエポキシ樹脂やシリコーン樹脂等の透明樹脂の光透過率が劣化し、1万時間を超えて高輝度を確保して安定的に発光させるのが困難になる。   When the heat conductivity of the heat sink 6 is less than 100 W / m · K, for example, when the driving current is 20 mA, the chip junction temperature of the light-emitting element 5 is 65 ° C. or more, and the light-emitting efficiency of the light-emitting element 5 is significantly deteriorated and the heat is reduced. The light transmittance of a transparent resin such as an epoxy resin or a silicone resin that covers the light emitting element 5 is deteriorated due to a mechanical load, and it becomes difficult to ensure high luminance over 10,000 hours and stably emit light.

また、放熱板6は、枠体4との熱膨張係数差が5×10-6/℃以下であることがよい。これにより、パッケージ1の製造工程で銀ロウ等のロウ材を介して基体2と枠体4と放熱板6とを接合する際に、ロウ材が溶融する温度から常温に冷却され硬化する際に生じる、枠体4の収縮によって基体2に加わる曲げモーメントを放熱板6により緩和することができる。   Moreover, it is preferable that the heat sink 6 has a thermal expansion coefficient difference of 5 × 10 −6 / ° C. or less with respect to the frame body 4. As a result, when the base 2, the frame body 4, and the heat radiating plate 6 are joined via the brazing material such as silver brazing in the manufacturing process of the package 1, when the brazing material is cooled to normal temperature and cured. The bending moment applied to the base body 2 due to the contraction of the frame body 4 can be reduced by the heat radiating plate 6.

また、枠体4は、Al,Ag,Cu,Au,Pt,Fe−Ni−Co合金,Fe−Ni合金等の金属からなり、とりわけ光の反射効果が高く低コストに製造できることからAlが好ましい。この枠体4は、上記の金属のインゴットに切削加工、圧延加工や打ち抜き加工等の従来周知の金属加工を施すことによって、内周面が上方に向かって外側に広がる貫通穴4aが形成され、基体2の上側主面の外周部に搭載部2aを囲むように取着される。   The frame 4 is made of metal such as Al, Ag, Cu, Au, Pt, Fe—Ni—Co alloy, Fe—Ni alloy, etc., and Al is preferable because it has a high light reflection effect and can be manufactured at low cost. . This frame body 4 is formed with a through-hole 4a whose inner peripheral surface extends outwardly upward by applying conventionally known metal processing such as cutting, rolling and punching to the metal ingot. It is attached to the outer peripheral portion of the upper main surface of the base 2 so as to surround the mounting portion 2a.

また、枠体4の貫通穴4aは、その内周面が基体2の上側主面に対して35〜60度の角度で外側に広がるように形成されるのがよい。そして、貫通穴4aに収容された発光素子5の光を傾斜した貫通穴4aの内周面で反射させることにより、パッケージ1の外部へ光軸に対して20度以内の範囲で良好に放射することができる。その結果、本発明のパッケージ1を使用した発光装置の輝度を極めて高いものとすることができる。   Further, the through hole 4 a of the frame body 4 is preferably formed such that its inner peripheral surface extends outward at an angle of 35 to 60 degrees with respect to the upper main surface of the base 2. Then, the light of the light emitting element 5 accommodated in the through hole 4a is reflected by the inner peripheral surface of the inclined through hole 4a, so that the light is radiated to the outside of the package 1 within a range of 20 degrees or less with respect to the optical axis. be able to. As a result, the luminance of the light emitting device using the package 1 of the present invention can be made extremely high.

貫通穴4aの内周面と基体2の上側主面とのなす角度が35度未満になると、光の放射角度が20度以上に分散し、指向性をもつ高出力の光を放射できない。また、60度を超えると、発光素子5の光が効率よくパッケージ1の外部に放射されず、パッケージ1内を乱反射し損失が増加する。   When the angle formed by the inner peripheral surface of the through hole 4a and the upper main surface of the base 2 is less than 35 degrees, the light emission angle is dispersed to 20 degrees or more, and high-power light having directivity cannot be emitted. On the other hand, when the angle exceeds 60 degrees, the light from the light emitting element 5 is not efficiently radiated to the outside of the package 1, and the inside of the package 1 is irregularly reflected to increase the loss.

なお、光の放射角度は、図1のような縦断面においてみた場合のものであり、光ビームの光軸に直交する断面における断面形状が円形状であれば放射角度は一定であり、光ビームの光軸に直交する断面における断面形状が楕円形状等の偏りがある場合は放射角度はその最大値とする。   The light emission angle is as seen in a longitudinal section as shown in FIG. 1, and if the cross-sectional shape in a cross section perpendicular to the optical axis of the light beam is circular, the radiation angle is constant, and the light beam If the cross section of the cross section perpendicular to the optical axis has a deviation such as an elliptical shape, the radiation angle is the maximum value.

また、枠体4の貫通穴4aの内周面の算術平均粗さRaは0.004〜4μmが好ましい。4μmを超えると、貫通穴4aに収容された発光素子5の光を均一に反射することが困難になり、反射する光の強さに偏りが発生しやすくなる。0.004μm未満であると、そのような平滑な面を安定かつ効率よく形成することが困難となる傾向にある。貫通穴4aの内周面のRaを上記の範囲とするには、従来周知の化学エッチング法や切削加工方法により加工することができる。また、金型の面精度を利用した転写加工による方法を用いてもよい。   The arithmetic average roughness Ra of the inner peripheral surface of the through hole 4a of the frame 4 is preferably 0.004 to 4 μm. When it exceeds 4 μm, it becomes difficult to uniformly reflect the light of the light emitting element 5 accommodated in the through hole 4a, and the intensity of the reflected light tends to be biased. If it is less than 0.004 μm, it tends to be difficult to form such a smooth surface stably and efficiently. In order to set Ra of the inner peripheral surface of the through hole 4a within the above range, it can be processed by a conventionally known chemical etching method or cutting method. Alternatively, a transfer processing method using the surface accuracy of the mold may be used.

また、枠体4の上側主面と内周面との間に段差4bを形成し、その段差4bに、集光レンズ等の機能を有するガラス,サファイア,プラスチック,石英等から成る透光性部材8の端部を係止し接着等して設置することがよい。この場合、発光素子5と透光性部材8との光学的な結合状態を安定に維持することができ、光学的特性が安定化した発光装置となすことができる。   Further, a step 4b is formed between the upper main surface and the inner peripheral surface of the frame body 4, and the translucent member made of glass, sapphire, plastic, quartz or the like having a function of a condenser lens or the like is formed on the step 4b. It is preferable that the end portion of 8 is locked and bonded. In this case, the optical coupling state between the light emitting element 5 and the translucent member 8 can be stably maintained, and a light emitting device with stable optical characteristics can be obtained.

本発明においては、基体2と枠体4との接合は、シリコーン樹脂系やエポキシ樹脂系等の樹脂接着剤、Ag−Cuロウ等のロウ材、またはPb−Sn合金,Au−Sn合金,Au−Si合金等の半田などの接合材により行なわれる。この接合材は、基体2および枠体4の材質や熱膨張係数等を考慮して適宜選定すればよく、特に限定されるものではないが、接合の高信頼性を必要とされる場合にはロウ材や半田が好ましい。   In the present invention, the base 2 and the frame 4 are joined by a resin adhesive such as a silicone resin or an epoxy resin, a brazing material such as Ag-Cu brazing, or a Pb-Sn alloy, Au-Sn alloy, Au -It is performed with a bonding material such as solder such as Si alloy. The bonding material may be appropriately selected in consideration of the material of the base body 2 and the frame body 4, the thermal expansion coefficient, and the like, and is not particularly limited, but when high reliability of bonding is required. A brazing material or solder is preferred.

また本発明において、熱膨張係数が約7×10-6〜8×10-6/℃であるアルミナセラミックス等から成る基体2と、その上側主面の外周部に接合された熱膨張係数が約23×10-6/℃であるアルミニウム等から成る枠体4と、基体2の下側主面の中央部に接合された熱膨張係数が約6×10-6〜10×10-6/℃であるFe−Ni−Co合金等から成る放熱板6との間の熱膨張差によって、基体2にクラック等が発生するのを抑制するうえで、放熱板6の外周端が枠体4の下面の内周端の直下よりも基板2の下側主面の外周側にあることが好ましい。これにより、基体2が、それと同程度の熱膨張係数を有する放熱板6によって補強され、基体2にクラック等が発生するのを効果的に抑えられる。さらには、放熱板6の外周端が枠体4の下面の中央部よりも基板2の下側主面の外周側にあることがより好ましい。これにより、基体2の補強効果がより高まり、基体2にクラック等が発生するのをさらに効果的に抑えられる。   In the present invention, the base 2 made of alumina ceramic or the like having a thermal expansion coefficient of about 7 × 10 −6 to 8 × 10 −6 / ° C. and the thermal expansion coefficient bonded to the outer peripheral portion of the upper main surface thereof are about The coefficient of thermal expansion bonded to the central portion of the lower main surface of the base body 2 and the frame 4 made of aluminum or the like at 23 × 10 −6 / ° C. is about 6 × 10 −6 to 10 × 10 −6 / ° C. In order to suppress the occurrence of cracks and the like in the base 2 due to the difference in thermal expansion between the heat sink 6 made of Fe-Ni-Co alloy or the like, the outer peripheral end of the heat sink 6 is the lower surface of the frame 4 It is preferable that it exists in the outer peripheral side of the lower main surface of the board | substrate 2 rather than just under the inner peripheral end of this. Thereby, the base | substrate 2 is reinforced by the heat sink 6 which has a thermal expansion coefficient comparable as it, and it can suppress effectively that a crack etc. generate | occur | produce in the base | substrate 2. FIG. Furthermore, it is more preferable that the outer peripheral end of the heat radiating plate 6 is on the outer peripheral side of the lower main surface of the substrate 2 than the central portion of the lower surface of the frame body 4. Thereby, the reinforcement effect of the base 2 is further enhanced, and the occurrence of cracks and the like in the base 2 can be further effectively suppressed.

なお、基体2の下側主面の外周部には配線導体3が露出しているため、放熱板6の外周端は基板2の下側主面の外周端に達していないのがよい。   Since the wiring conductor 3 is exposed at the outer peripheral portion of the lower main surface of the base 2, the outer peripheral end of the heat sink 6 should not reach the outer peripheral end of the lower main surface of the substrate 2.

かくして、本発明のパッケージは、基体2の搭載部2aに発光素子5を搭載し、発光素子5の電極と配線導体3とを半田バンプ7を介して電気的に接続し、しかる後、発光素子5をシリコーン樹脂等の透明樹脂で覆うか、または発光素子5が収容された貫通穴4a内に透明樹脂を充填して発光素子5を封止し、枠体4の上方の発光素子5の光軸上に設置されるとともに枠体4の上側主面の段差4bに透光性部材8を設置することで発光装置となる。   Thus, in the package of the present invention, the light emitting element 5 is mounted on the mounting portion 2a of the base 2, the electrodes of the light emitting element 5 and the wiring conductor 3 are electrically connected via the solder bumps 7, and then the light emitting element 5 is covered with a transparent resin such as a silicone resin, or a transparent resin is filled in the through hole 4a in which the light emitting element 5 is accommodated to seal the light emitting element 5, and the light of the light emitting element 5 above the frame 4 By installing the translucent member 8 on the step 4b on the upper main surface of the frame 4 while being installed on the shaft, a light emitting device is obtained.

なお、本発明は上記の実施の形態に限定されず、本発明の要旨を逸脱しない範囲内で種々の変更を行うことは何等支障ない。   It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible without departing from the scope of the present invention.

本発明の発光素子収納用パッケージについて実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment about the light emitting element accommodation package of this invention. 従来の発光素子収納用パッケージの断面図である。It is sectional drawing of the conventional package for light emitting element accommodation.

符号の説明Explanation of symbols

1:発光素子収納用パッケージ
2:基体
2a:搭載部
3:配線導体
4:枠体
5:発光素子
6:放熱板
8:透光性部材
1: Light emitting element storage package 2: Base body 2a: Mounting portion 3: Wiring conductor 4: Frame body 5: Light emitting element 6: Heat sink 8: Translucent member

Claims (3)

発光素子と、
前記発光素子の搭載部と、前記発光素子を囲む光反射面とを有するパッケージと、
前記パッケージの下面に設けられた放熱板と、
を備えた発光装置。
A light emitting element;
A package having a mounting portion of the light emitting element and a light reflecting surface surrounding the light emitting element;
A heat sink provided on the lower surface of the package;
A light emitting device comprising:
前記発光素子上に配置された透光性部材をさらに備えたことを特徴とする請求項1記載の発光装置。   The light-emitting device according to claim 1, further comprising a translucent member disposed on the light-emitting element. 前記光反射面は上方に向かって外側に広がっていることを特徴とする請求項1記載の発光装置。   The light-emitting device according to claim 1, wherein the light reflecting surface extends outward and upward.
JP2007047340A 2007-02-27 2007-02-27 Light-emitting device Pending JP2007142476A (en)

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