JP2004228413A - Package for housing light emitting element and light emitting device - Google Patents

Package for housing light emitting element and light emitting device Download PDF

Info

Publication number
JP2004228413A
JP2004228413A JP2003015992A JP2003015992A JP2004228413A JP 2004228413 A JP2004228413 A JP 2004228413A JP 2003015992 A JP2003015992 A JP 2003015992A JP 2003015992 A JP2003015992 A JP 2003015992A JP 2004228413 A JP2004228413 A JP 2004228413A
Authority
JP
Japan
Prior art keywords
emitting element
light emitting
light
package
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003015992A
Other languages
Japanese (ja)
Other versions
JP4383059B2 (en
Inventor
Yoshinori Maekawa
義紀 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2003015992A priority Critical patent/JP4383059B2/en
Publication of JP2004228413A publication Critical patent/JP2004228413A/en
Application granted granted Critical
Publication of JP4383059B2 publication Critical patent/JP4383059B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To make a light emitting element preventable from damaged or from electrically mulfunctioning by dispersing well heat generated at the light emitting element to the outside of a package for housing the light emitting element. <P>SOLUTION: A recess 2a for housing a light emitting element 3 is formed on the upper surface of a base body 1 consisting of a sintered body of aluminum nitride. On the bottom surface of the recess 2a, a mounting part 1a composed of a metallized layer on which the light emitting element 3 is mounted is provided. A wiring layer 7b comprising the matallized layer to which an electrode of the light emitting element 3 is electrically connected is formed near the mounting part 1a. The mounting part 1a is provided with a first non conductor-formation part 8a which is smaller than the lower surface of the light emitting element 3, and the wiring layer 7b is provided with a second non conductor-formation part 8b. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は、発光ダイオード等の発光素子を用いた表示装置等に用いられる、発光素子を収納するための発光素子収納用パッケージおよび発光装置に関する。
【0002】
【従来の技術】
従来、発光ダイオード等の発光素子を収容するための発光素子収納用パッケージ(以下、パッケージともいう)として、セラミック製のパッケージが用いられている。従来のセラミック製のパッケージは、図5に断面図で示すように、上面の中央部に発光素子23を搭載するための導体層から成る搭載部21aを有し、搭載部21aおよびその周辺から下面に導出された一対のメタライズ配線導体24a,24bを有する略四角平板状のセラミック製の基体21と、その上面に積層され、中央部に発光素子23を収容するための貫通孔22aを有する四角枠状のセラミック製の枠体22とから主に構成されている(例えば、下記の特許文献1参照)。
【0003】
そして、基体21の上面の一方のメタライズ配線導体24aが接続された搭載部21a上に発光素子23を導電性接合材を介して固着するとともに発光素子23の電極と他方のメタライズ配線導体24bとをボンディングワイヤ25を介して電気的に接続し、しかる後、枠体22の貫通孔22a内に透明樹脂(図示せず)を充填して発光素子23を封止することによって発光装置となる。この発光装置を外部電気回路基板の配線導体に半田を介して接続することによって、発光装置が外部電気回路基板に実装されるとともに搭載する発光装置の電極が外部電気回路に電気的に接続され発光素子23へ電力が供給されることとなる。
【0004】
このようなセラミック製のパッケージにおいては、内部に収容する発光素子23が発する光を枠体22の貫通孔22aの内周面で反射させて発光装置の発光効率を良好なものとするために、貫通孔22aの内周面にニッケル(Ni)や金(Au)等の金属から成る金属めっき層26bを表面に有するメタライズ金属層26aを被着させている。
【0005】
また、従来、半導体素子などを作動させたときに発生する熱をパッケージの外部へ放散させて、半導体素子の破損や電気的な誤動作などを防止するために、パッケージは熱伝導性の良い窒化アルミニウム質焼結体から成るものが使用されている。
【0006】
【特許文献1】
特開2002−232017号公報
【0007】
【発明が解決しようとする課題】
しかしながら、上記従来のパッケージにおいては、発光素子23に電圧を印加して発光させる際に発光素子23で発生する熱を基体21を介してパッケージ外部へ効率よく放散させるために、基体21を熱伝導性の良い窒化アルミニウム質焼結体で構成した場合であっても、メタライズ層等の導体層から成る搭載部21aと搭載部21aおよびその周辺から基体21の下面にかけて形成されたメタライズ配線導体24a,24bに発光素子23が電気的に接続されていることから、搭載部21aおよび一対のメタライズ配線導体24a,24bにより熱が遮られてしまう。すなわち、メタライズ層は、熱伝導性の良い金属粒子を含むとはいえ、焼結した金属粒子の塊の間にはガラス成分が存在しているため、熱伝導率が金属粒子の熱伝導率の1/3程度に低下しており、窒化アルミニウム質焼結体よりも熱伝導率が劣化していることによる。その結果、発光素子23の熱を良好にパッケージ外部へ放散するのが困難であるという問題点があった。
【0008】
従って、本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、発光素子で発生する熱を良好にパッケージ外部へ放散することができ、その結果、発光素子の破損や電気的な誤動作を防止することが可能な発光素子収納用パッケージおよび発光装置を提供することにある。
【0009】
【課題を解決するための手段】
本発明の発光素子収納用パッケージは、窒化アルミニウム質焼結体から成る基体の上面に発光素子を収容するための凹部が形成され、該凹部の底面に前記発光素子が搭載されるメタライズ層から成る搭載部が設けられるとともに、該搭載部の近傍に、前記発光素子の電極が電気的に接続される、メタライズ層から成る配線層が形成されて成る発光素子収納用パッケージであって、前記搭載部は前記発光素子の下面よりも小さい第1の導体非形成部が設けられており、前記配線層は第2の導体非形成部が設けられていることを特徴とする。
【0010】
本発明の発光素子収納用パッケージは、窒化アルミニウム質焼結体から成る基体の上面に発光素子を収容するための凹部が形成され、この凹部の底面に発光素子が搭載されるメタライズ層から成る搭載部が設けられるとともに、この搭載部の近傍に、発光素子の電極が電気的に接続される、メタライズ層から成る配線層が形成されて成り、搭載部は発光素子の下面よりも小さい第1の導体非形成部が設けられており、配線層は第2の導体非形成部が設けられていることから、第1の導体非形成部および第2の導体非形成部の基体が露出している部位から、発光素子で発生した熱を良好にパッケージの外部へ放散させることができる。
【0011】
本発明の発光装置は、本発明の発光素子収納用パッケージと、前記搭載部に搭載されるとともに前記搭載部の周囲の前記配線層に電気的に接続された前記発光素子と、該発光素子を覆う透明樹脂とを具備したことを特徴とする。
【0012】
本発明の発光装置は、上記の構成により、発光素子で発生する熱を良好に放散させることができ、発光素子の破損や電気的な誤動作のない信頼性の高いものとなる。
【0013】
【発明の実施の形態】
本発明の発光素子収納用パッケージを以下に詳細に説明する。図1は、本発明のパッケージについて実施の形態の一例を示す平面図であり、図2は図1の断面図である。1は基体、1aは発光素子3の搭載部、3は発光素子、2aは発光素子3を収容するための凹部である。主としてこれらでパッケージが構成されている。
【0014】
本発明のパッケージは、窒化アルミニウム質焼結体から成る基体1の上面に発光素子3を収容するための凹部2aが形成され、凹部2aの底面に発光素子3が搭載されるメタライズ層から成る搭載部1aが設けられるとともに、搭載部1aの近傍に、発光素子3の電極が電気的に接続される、メタライズ層から成る配線層7bが形成されて成るものであって、搭載部1aは発光素子3の下面よりも小さい第1の導体非形成部8aが設けられており、配線層7bは第2の導体非形成部8bが設けられている。
【0015】
本発明における基体1は、窒化アルミニウム質焼結体から成る絶縁層を複数層積層してなる直方体状の箱体であり、上面の中央部に発光素子3を収容するための凹部2aが形成されている。この基体1は、窒化アルミニウムなどの原料粉末に適当な有機バインダー、溶剤等を添加混合して泥漿状となし、これを従来周知のドクターブレード法やカレンダーロール法等によりシート状に成形してセラミックグリーンシート(セラミック生シートで、以下、グリーンシートともいう)を得、しかる後、グリーンシートに凹部2a用の貫通孔を打ち抜き加工で形成するとともに、発光素子3を搭載するためのグリーンシートと凹部2a用の枠状のグリーンシートとを複数枚積層し、高温(約1600℃)で焼成し、一体化することで形成される。
【0016】
また、凹部2aの底面には発光素子3を搭載するための搭載部1aが形成されており、搭載部1aはタングステン(W),モリブデン(Mo),銅(Cu),銀(Ag)等の金属粉末のメタライズ層から成っている。
【0017】
また、基体1は、搭載部1aおよびその周辺から基体1の下面にかけて形成されるとともに基体1下面のメタライズ配線導体4a,4bに電気的に接続された配線層7a,7bが設けられている。配線層7a,7bおよびメタライズ配線導体4a,4bは、WやMo等の金属粉末のメタライズ層から成り、凹部2aに収納する発光素子3を外部に電気的に接続するための導電路である。そして、搭載部1aには発光ダイオード(LED),半導体レーザ(LD)等の発光素子3が金(Au)−シリコン(Si)合金やAg−エポキシ樹脂等の導電性接合材により固着されるとともに、配線層7bには発光素子3の電極がボンディングワイヤ5を介して電気的に接続されている。そして、基体1下面のメタライズ配線導体4a,4bが外部電気回路基板の配線導体に接続されることで、発光素子3の各電極が外部電気回路基板の配線導体に電気的に接続され、発光素子3へ電力や駆動信号が供給される。また、発光素子3は図3,図4に示すように搭載部1aおよび配線層7bにフリップチップ実装により接続されても構わない。
【0018】
搭載部1a、配線層7a,7bおよびメタライズ配線導体4a,4bは、例えばWやMo等の金属粉末に適当な有機溶剤、溶媒を添加混合して得た金属ペーストを、基体1となるグリーンシートに予めスクリーン印刷法により所定パターンに印刷塗布しておくことによって、基体1の所定位置に被着形成される。
【0019】
なお、配線層7b、搭載部1aおよびメタライズ配線導体4a,4bの露出する表面に、ニッケル(Ni),金(Au),Ag等の耐蝕性に優れる金属を1〜20μm程度の厚みで被着させておくのがよく、配線層7b、搭載部1aおよびメタライズ配線導体4a,4bが酸化腐蝕するのを有効に防止できるとともに、搭載部1aと発光素子3との固着および配線層7bとボンディングワイヤ5との接続、メタライズ配線導体4a,4bと外部電気回路基板の配線導体との接続を強固にすることができる。従って、配線層7b、搭載部1aおよびメタライズ配線導体4a,4bの露出表面に、厚さ1〜10μm程度のNiめっき層と厚さ0.1〜3μm程度のAuめっき層またはAgめっき層とが、電解めっき法や無電解めっき法により順次被着されていることがより好ましい。
【0020】
また、凹部2aの内周面のメタライズ金属層6aには発光素子3が発光する光に対する反射率が80%以上であるめっき金属層6bが被着形成されていることが好ましい。例えば、WやMo等からなるメタライズ金属層6a上にNi,Au,Ag等のめっき金属層6bを被着させてなり、これにより発光素子3が発光する光に対する反射率を80%以上とすることができる。発光素子3が発光する光に対する反射率が80%未満であると、凹部2aに収容された発光素子3が発光する光を良好に反射することが困難となる。
【0021】
また、凹部2aの内周面は、傾斜面となっているとともに凹部2aの底面から絶縁基体1の上面に向けて35〜70°の角度で外側に広がっていることが好ましい。角度θが70°を超えると、凹部2a内に収容した発光素子3が発光する光を外部に対して良好に反射することが困難となる傾向にある。一方角度θが35°未満であると、凹部2aの内周面をそのような角度で安定かつ効率良く形成することが困難となる傾向にあるとともに、パッケージが大型化してしまう。
【0022】
また、凹部2aの内周面のめっき金属層6bの表面の算術平均粗さRaは1〜3μmが好ましい。1μm未満であると、凹部2a内に収容された発光素子3が発光する光を均一に反射させることが難しくなり、反射する光の強さに偏りが発生し易くなる。3μmを超えると、凹部2a内に収容された発光素子3が発光する光が散乱し、反射光を高い反射率で外部に均一に放射することが困難になる。
【0023】
また、凹部2aは、その横断面形状が円形状であることが好ましい。この場合、凹部2aに収容された発光素子3が発光する光を凹部2aの内周面の表面のめっき金属層6bで満遍なく反射させて外部に極めて均一に放射することができるという利点がある。
【0024】
メタライズ配線導体4a,4bは、その面積が絶縁基体1の下面に対しておのおの15%以上であるとともに、その表面の平坦度が20μm/10mm以下であることが好ましい。面積が15%未満であると、メタライズ配線導体4a,4bの平坦性が劣化しやすくなるとともに、外部電気回路基板の配線導体との接続の強度が低下しやすくなる。また、20μm/10mmを超えると、メタライズ配線導体4a,4bを外部電気回路基板の配線導体に半田を介して接続する際に、メタライズ配線導体4a,4b間に高さのバラツキが発生し、メタライズ配線導体4a,4bを外部電気回路基板の配線導体の正確な位置に実装するのが困難となったり、絶縁基体1が外部電気回路基板に対して傾斜したりする。
【0025】
また、メタライズ配線導体4a,4bは、絶縁基体1の側面に延出させたり、絶縁基体1の角部や側面に切欠き部等を形成してこの切欠き部の側面に延出させても良い。この場合、外部電気回路基板の配線導体との半田等のメニスカスによる接合面積を大きくできるので、メタライズ配線導体4a,4bと外部電気回路基板との接続性を向上させることができる。また、メタライズ配線導体4a,4bは、基体1の下面における面積がおのおの異なっていても構わない。
【0026】
本発明のパッケージにおいて、搭載部1aは発光素子3の下面よりも小さい第1の導体非形成部8aが設けられており、配線層7bは第2の導体非形成部8bが設けられている。これにより、第1および第2の導体非形成部8a,8bの基体1が露出している部位から、発光素子3の熱を良好にパッケージ外部へ放散させることができる。
【0027】
第1および第2の導体非形成部8a,8bは、搭載部1aおよび配線層7bを形成するための金属ペーストを、基体1となるグリーンシートにスクリーン印刷法により印刷塗布する際に、図1のような所定パターンに形成することができる。
【0028】
第1および第2の導体非形成部8a,8bの形状は、図1のような四角形状のものを縦横に並べた格子状に限らず、円形状、楕円形状、三角形状、五角形状等の多角形状などの種々の形状のものを、縦横に並べたり任意に配置することができる。
【0029】
また、第1の導体非形成部8aの大きさは発光素子3の下面よりも小さいが、これは、第1の導体非形成部8aの大きさが発光素子3の下面の大きさ以上であると、発光素子3の下面が搭載部1aに搭載できなくなる場合が生じるからである。
【0030】
第1の導体非形成部8aは、その合計の面積が搭載部1aの面積の50〜80%であることが好ましい。50%未満では、搭載部1aにおける放熱性が低下して発光素子3の作動性が劣化し易くなる。80%を超えると、発光素子3を搭載部1aに搭載するのが難しくなる。また、メタライズ層から成る搭載部1aは、発光素子3の光が凹部2a底面から絶縁基体1内部へ漏れるのを防ぐ効果も有しているため、第1の導体非形成部8aの面積が大きすぎないようにするのがよく、その点からも第1の導体非形成部8aの合計の面積が搭載部1aの面積の80%以下であるのがよい。
【0031】
第2の導体非形成部8bは、配線層7bにボンディングワイヤ5や導体バンプが接続できればよいため、第1の導体非形成部8aよりも大きい形状で形成することができる。したがって、配線層7bにボンディングワイヤ5や導体バンプが接続できる縦0.1mm×横0.1mm程度の導体領域が残るように、第2の導体非形成部8bが形成されていればよい。
【0032】
また、本発明の実施の形態の他の例を図3の平面図および図4の断面図に示す。これらの図は、発光素子13が搭載部11aおよび配線層17bにフリップチップ実装された場合を示すものである。このようなフリップチップ実装の場合、発光素子13下面の導体バンプ(両電極)を介して電力が供給されることから下面側に多くの熱が発生しやすく、特に複数個の発光素子13を搭載する場合、即ち、フルカラー発光させるパッケージのように多数個の発光素子13を搭載させる場合など、搭載部11aおよび配線層17b上で発生する熱は非常に大きな熱量となる。このように大きな熱量の熱も良好に放散させられるため、それぞれの発光素子13が破損することもなく、発光素子13の電圧、光の波長、輝度などの仕様も満足させることができる。
【0033】
本発明の発光装置は、本発明のパッケージと、搭載部1aに搭載されるとともに搭載部1aの周囲の配線層7bに電気的に接続された発光素子3と、発光素子3を覆うシリコーン樹脂等の透明樹脂とを具備したことから、発光素子3から発生する熱を良好に放散することができ、発光素子3の破損や電気的誤動作のない信頼性の高いものとなる。発光素子3を覆う透明樹脂は、発光素子3およびその周囲を覆うように設けてもよく、凹部2a内に充填させて発光素子3を覆うように設けてもよい。
【0034】
なお、本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を施すことは何等差し支えない。
【0035】
【発明の効果】
本発明の発光素子収納用パッケージは、窒化アルミニウム質焼結体から成る基体の上面に発光素子を収容するための凹部が形成され、凹部の底面に発光素子が搭載されるメタライズ層から成る搭載部が設けられるとともに、搭載部の近傍に、発光素子の電極が電気的に接続される、メタライズ層から成る配線層が形成されて成り、搭載部は発光素子の下面よりも小さい第1の導体非形成部が設けられており、配線層は第2の導体非形成部が設けられていることから、第1の導体非形成部および第2の導体非形成部の基体が露出している部位から、発光素子で発生する熱を良好に発光素子収納用パッケージの外部へ放散させることができる。
【0036】
本発明の発光装置は、本発明の発光素子収納用パッケージと、搭載部に搭載されるとともに搭載部の周囲の配線導体に電気的に接続された発光素子と、発光素子を覆う透明樹脂とを具備したことから、発光素子で発生する熱を良好に放散することができ、発光素子の破損や電気的な誤動作のない信頼性の高いものとなる。
【図面の簡単な説明】
【図1】本発明の発光素子収納用パッケージについて実施の形態の一例を示す平面図である。
【図2】図1の発光素子収納用パッケージの断面図である。
【図3】本発明の発光素子収納用パッケージについて実施の形態の他の例を示す平面図である。
【図4】図3の発光素子収納用パッケージの断面図である。
【図5】従来の発光素子収納用パッケージの例を示す断面図である。
【符号の説明】
1:基体
2:枠体
3:発光素子
7a,7b:配線層
8a:第1の導体非形成部
8b:第2の導体非形成部
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a light emitting element housing package for housing a light emitting element and a light emitting device used for a display device or the like using a light emitting element such as a light emitting diode.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a ceramic package has been used as a light emitting element housing package (hereinafter, also referred to as a package) for housing a light emitting element such as a light emitting diode. As shown in a cross-sectional view of FIG. 5, the conventional ceramic package has a mounting portion 21a formed of a conductor layer for mounting the light emitting element 23 at the center of the upper surface. And a rectangular frame having a substantially square plate-like ceramic base 21 having a pair of metallized wiring conductors 24a and 24b led out, and a through-hole 22a for accommodating the light-emitting element 23 in the center, laminated on the upper surface thereof. And a frame-shaped ceramic frame 22 (for example, see Patent Document 1 below).
[0003]
Then, the light emitting element 23 is fixed via a conductive bonding material on the mounting portion 21a to which the one metallized wiring conductor 24a on the upper surface of the base 21 is connected, and the electrode of the light emitting element 23 and the other metallized wiring conductor 24b are connected. A light emitting device is obtained by electrically connecting via the bonding wire 25 and then filling the through hole 22a of the frame 22 with a transparent resin (not shown) and sealing the light emitting element 23. By connecting the light emitting device to the wiring conductor of the external electric circuit board via solder, the light emitting device is mounted on the external electric circuit board and the electrodes of the mounted light emitting device are electrically connected to the external electric circuit to emit light. Power is supplied to the element 23.
[0004]
In such a ceramic package, the light emitted from the light emitting element 23 housed therein is reflected by the inner peripheral surface of the through hole 22a of the frame 22 to improve the light emission efficiency of the light emitting device. A metallized metal layer 26a having a metal plating layer 26b made of a metal such as nickel (Ni) or gold (Au) on the inner surface of the through hole 22a is applied.
[0005]
Conventionally, in order to dissipate the heat generated when operating a semiconductor device or the like to the outside of the package and prevent damage to the semiconductor device or electrical malfunction, the package is made of aluminum nitride having good heat conductivity. What consists of a quality sintered body is used.
[0006]
[Patent Document 1]
JP-A-2002-232017
[Problems to be solved by the invention]
However, in the above-mentioned conventional package, in order to efficiently dissipate the heat generated in the light emitting element 23 when applying a voltage to the light emitting element 23 to emit light to the outside of the package via the base 21, the base 21 is thermally conductive. Even if it is made of an aluminum nitride sintered body having good properties, the mounting portion 21a made of a conductor layer such as a metallized layer and the metallized wiring conductors 24a, Since the light emitting element 23 is electrically connected to 24b, heat is blocked by the mounting portion 21a and the pair of metallized wiring conductors 24a and 24b. In other words, although the metallized layer contains metal particles having good thermal conductivity, the glass component exists between the masses of the sintered metal particles, so that the thermal conductivity is lower than the thermal conductivity of the metal particles. This is due to the fact that the thermal conductivity is lower than that of the aluminum nitride sintered body by about 1/3. As a result, there is a problem that it is difficult to satisfactorily dissipate the heat of the light emitting element 23 to the outside of the package.
[0008]
Therefore, the present invention has been completed in view of the above-described conventional problems, and an object of the present invention is to satisfactorily dissipate heat generated in a light emitting element to the outside of a package. An object of the present invention is to provide a light emitting element housing package and a light emitting device that can prevent an electrical malfunction.
[0009]
[Means for Solving the Problems]
The light-emitting element housing package of the present invention comprises a metallization layer in which a recess for housing the light-emitting element is formed on the upper surface of a base made of an aluminum nitride sintered body, and the light-emitting element is mounted on the bottom of the recess. A light-emitting element housing package, comprising: a mounting portion, and a wiring layer formed of a metallization layer formed near the mounting portion, to which an electrode of the light-emitting element is electrically connected. Is characterized in that a first conductor non-formed portion smaller than the lower surface of the light emitting element is provided, and the wiring layer is provided with a second conductor non-formed portion.
[0010]
The light-emitting element housing package according to the present invention includes a base formed of an aluminum nitride sintered body, a recess for housing the light-emitting element formed on an upper surface, and a mounting layer formed of a metallized layer on which the light-emitting element is mounted on the bottom of the recess. And a wiring layer formed of a metallization layer, to which electrodes of the light emitting element are electrically connected, is formed near the mounting portion, and the mounting portion is smaller than the lower surface of the light emitting element. Since the conductor non-formed portion is provided and the wiring layer is provided with the second conductor non-formed portion, the bases of the first conductor non-formed portion and the second conductor non-formed portion are exposed. The heat generated in the light emitting element can be satisfactorily dissipated from the portion to the outside of the package.
[0011]
The light-emitting device of the present invention includes the light-emitting element housing package of the present invention, the light-emitting element mounted on the mounting portion and electrically connected to the wiring layer around the mounting portion, and the light-emitting element. And a covering transparent resin.
[0012]
With the above configuration, the light emitting device of the present invention can satisfactorily dissipate heat generated in the light emitting element, and has high reliability without damage to the light emitting element and electrical malfunction.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
The light emitting element housing package of the present invention will be described in detail below. FIG. 1 is a plan view showing an example of an embodiment of the package of the present invention, and FIG. 2 is a sectional view of FIG. 1 is a base, 1a is a mounting portion of the light emitting element 3, 3 is a light emitting element, and 2a is a recess for accommodating the light emitting element 3. A package is mainly composed of these components.
[0014]
In the package of the present invention, a concave portion 2a for accommodating the light emitting element 3 is formed on an upper surface of a base 1 made of an aluminum nitride sintered body, and a mounting layer formed of a metallized layer on which the light emitting element 3 is mounted on the bottom surface of the concave portion 2a. And a wiring layer 7b formed of a metallization layer and electrically connected to an electrode of the light emitting element 3 near the mounting section 1a. The mounting section 1a is provided with a light emitting element. 3, a first conductor non-formed portion 8a smaller than the lower surface is provided, and the wiring layer 7b is provided with a second conductor non-formed portion 8b.
[0015]
The base 1 in the present invention is a rectangular parallelepiped box formed by laminating a plurality of insulating layers made of an aluminum nitride sintered body, and has a concave portion 2a for accommodating the light emitting element 3 formed in the center of the upper surface. ing. The substrate 1 is formed into a slurry by adding and mixing an appropriate organic binder, a solvent, and the like to a raw material powder such as aluminum nitride, and then forming the same into a sheet by a well-known doctor blade method, calender roll method, or the like to form a ceramic. A green sheet (a ceramic green sheet, hereinafter also referred to as a green sheet) is obtained. Thereafter, a through hole for the concave portion 2a is formed in the green sheet by punching, and a green sheet and a concave portion for mounting the light emitting element 3 are formed. It is formed by laminating a plurality of frame-shaped green sheets for 2a, firing at a high temperature (about 1600 ° C.), and integrating them.
[0016]
A mounting portion 1a for mounting the light emitting element 3 is formed on the bottom surface of the concave portion 2a. The mounting portion 1a is made of tungsten (W), molybdenum (Mo), copper (Cu), silver (Ag), or the like. Consists of a metallized layer of metal powder.
[0017]
The base 1 is provided with wiring layers 7a and 7b formed from the mounting portion 1a and its periphery to the lower surface of the base 1, and electrically connected to metallized wiring conductors 4a and 4b on the lower surface of the base 1. The wiring layers 7a and 7b and the metallized wiring conductors 4a and 4b are formed of a metallized layer of a metal powder such as W or Mo, and are conductive paths for electrically connecting the light emitting element 3 housed in the recess 2a to the outside. A light emitting element 3 such as a light emitting diode (LED) or a semiconductor laser (LD) is fixed to the mounting portion 1a with a conductive bonding material such as a gold (Au) -silicon (Si) alloy or an Ag-epoxy resin. The electrode of the light emitting element 3 is electrically connected to the wiring layer 7b via the bonding wire 5. Then, by connecting the metallized wiring conductors 4a and 4b on the lower surface of the base 1 to the wiring conductors of the external electric circuit board, each electrode of the light emitting element 3 is electrically connected to the wiring conductor of the external electric circuit board, Power and drive signals are supplied to 3. Further, the light emitting element 3 may be connected to the mounting portion 1a and the wiring layer 7b by flip-chip mounting as shown in FIGS.
[0018]
The mounting portion 1a, the wiring layers 7a and 7b, and the metallized wiring conductors 4a and 4b are made of, for example, a metal paste obtained by adding an appropriate organic solvent or a solvent to a metal powder such as W or Mo, and mixing the metal paste with a green sheet serving as the base 1. The substrate is printed and applied in a predetermined pattern by a screen printing method in advance, so that the substrate 1 is adhered and formed at a predetermined position.
[0019]
A metal having excellent corrosion resistance, such as nickel (Ni), gold (Au), or Ag, is applied to the exposed surfaces of the wiring layer 7b, the mounting portion 1a, and the metallized wiring conductors 4a, 4b in a thickness of about 1 to 20 μm. It is preferable to prevent the wiring layer 7b, the mounting portion 1a and the metallized wiring conductors 4a and 4b from being oxidized and corroded, fix the mounting portion 1a to the light emitting element 3, and bond the wiring layer 7b and the bonding wire. 5, and the connection between the metallized wiring conductors 4a and 4b and the wiring conductor of the external electric circuit board can be strengthened. Therefore, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer or an Ag plating layer having a thickness of about 0.1 to 3 μm are formed on the exposed surfaces of the wiring layer 7b, the mounting portion 1a and the metallized wiring conductors 4a and 4b. More preferably, they are sequentially applied by an electrolytic plating method or an electroless plating method.
[0020]
Further, it is preferable that a plating metal layer 6b having a reflectance of 80% or more for light emitted by the light emitting element 3 is formed on the metallized metal layer 6a on the inner peripheral surface of the concave portion 2a. For example, a plating metal layer 6b of Ni, Au, Ag, or the like is adhered on a metallized metal layer 6a made of W, Mo, or the like, so that the light emitting element 3 has a reflectance of 80% or more with respect to emitted light. be able to. If the reflectance of the light emitted by the light emitting element 3 is less than 80%, it becomes difficult to satisfactorily reflect the light emitted by the light emitting element 3 accommodated in the recess 2a.
[0021]
It is preferable that the inner peripheral surface of the concave portion 2a is an inclined surface and extends outward from the bottom surface of the concave portion 2a toward the upper surface of the insulating base 1 at an angle of 35 to 70 °. When the angle θ exceeds 70 °, it tends to be difficult to favorably reflect light emitted from the light emitting element 3 housed in the recess 2 a to the outside. On the other hand, if the angle θ is less than 35 °, it tends to be difficult to stably and efficiently form the inner peripheral surface of the concave portion 2a at such an angle, and the package will become large.
[0022]
The arithmetic average roughness Ra of the surface of the plating metal layer 6b on the inner peripheral surface of the concave portion 2a is preferably 1 to 3 μm. When the thickness is less than 1 μm, it is difficult to uniformly reflect the light emitted from the light emitting element 3 housed in the concave portion 2a, and the intensity of the reflected light tends to be uneven. If it exceeds 3 μm, the light emitted by the light emitting element 3 housed in the concave portion 2a is scattered, and it becomes difficult to uniformly radiate the reflected light to the outside with a high reflectance.
[0023]
Further, the concave section 2a preferably has a circular cross-sectional shape. In this case, there is an advantage that the light emitted by the light emitting element 3 accommodated in the concave portion 2a can be reflected uniformly by the plated metal layer 6b on the inner peripheral surface of the concave portion 2a and can be radiated to the outside very uniformly.
[0024]
The metallized wiring conductors 4a and 4b preferably have an area of 15% or more with respect to the lower surface of the insulating base 1 and a flatness of the surface of 20 μm / 10 mm or less. When the area is less than 15%, the flatness of the metallized wiring conductors 4a and 4b is easily deteriorated, and the strength of connection with the wiring conductor of the external electric circuit board is easily reduced. If the thickness exceeds 20 μm / 10 mm, when the metallized wiring conductors 4a and 4b are connected to the wiring conductors of the external electric circuit board via solder, a variation in height occurs between the metallized wiring conductors 4a and 4b, and the metallized wiring conductors 4a and 4b become uneven. It becomes difficult to mount the wiring conductors 4a and 4b at the correct positions of the wiring conductors on the external electric circuit board, or the insulating base 1 is inclined with respect to the external electric circuit board.
[0025]
Further, the metallized wiring conductors 4a and 4b may be extended to the side surface of the insulating base 1, or may be formed at the corners and side surfaces of the insulating base 1 by forming notches or the like and extending to the side surfaces of the notches. good. In this case, the bonding area between the wiring conductors of the external electric circuit board and the meniscus such as solder can be increased, so that the connectivity between the metallized wiring conductors 4a and 4b and the external electric circuit board can be improved. The metallized wiring conductors 4a and 4b may have different areas on the lower surface of the base 1.
[0026]
In the package of the present invention, the mounting portion 1a is provided with a first conductor non-formed portion 8a smaller than the lower surface of the light emitting element 3, and the wiring layer 7b is provided with a second conductor non-formed portion 8b. Thereby, the heat of the light emitting element 3 can be satisfactorily radiated to the outside of the package from the portions of the first and second conductor non-formed portions 8a and 8b where the base 1 is exposed.
[0027]
When the metal paste for forming the mounting portion 1a and the wiring layer 7b is printed and applied to a green sheet serving as the base 1 by a screen printing method, the first and second conductor non-formed portions 8a and 8b are formed as shown in FIG. Can be formed in a predetermined pattern as shown in FIG.
[0028]
The shape of the first and second conductor non-formed portions 8a and 8b is not limited to a lattice shape in which square shapes as shown in FIG. 1 are arranged vertically and horizontally, but may be a circular shape, an elliptical shape, a triangular shape, a pentagonal shape, or the like. Various shapes such as polygons can be arranged vertically and horizontally or arbitrarily.
[0029]
Although the size of the first conductor non-formed portion 8a is smaller than the lower surface of the light emitting element 3, the size of the first conductor non-formed portion 8a is larger than the size of the lower surface of the light emitting element 3. This is because the lower surface of the light emitting element 3 may not be mounted on the mounting portion 1a.
[0030]
It is preferable that the total area of the first conductor non-formed portions 8a is 50 to 80% of the area of the mounting portion 1a. If it is less than 50%, the heat radiation in the mounting portion 1a is reduced, and the operability of the light emitting element 3 is easily deteriorated. If it exceeds 80%, it becomes difficult to mount the light emitting element 3 on the mounting section 1a. Further, the mounting portion 1a formed of the metallized layer also has an effect of preventing the light of the light emitting element 3 from leaking from the bottom surface of the concave portion 2a to the inside of the insulating base 1, so that the area of the first conductor non-formed portion 8a is large. It is preferable that the total area of the first conductor non-formed portion 8a is not more than 80% of the area of the mounting portion 1a.
[0031]
Since the second conductor non-formed portion 8b only needs to be able to connect the bonding wire 5 and the conductor bump to the wiring layer 7b, it can be formed in a shape larger than the first conductor non-formed portion 8a. Therefore, the second conductor non-formed portion 8b may be formed so that a conductor region of about 0.1 mm × 0.1 mm where the bonding wire 5 and the conductor bump can be connected to the wiring layer 7b remains.
[0032]
Another example of the embodiment of the present invention is shown in a plan view of FIG. 3 and a cross-sectional view of FIG. These figures show a case where the light emitting element 13 is flip-chip mounted on the mounting portion 11a and the wiring layer 17b. In the case of such flip-chip mounting, since electric power is supplied through the conductor bumps (both electrodes) on the lower surface of the light emitting element 13, a large amount of heat is easily generated on the lower surface side, and in particular, a plurality of light emitting elements 13 are mounted. In this case, that is, when a large number of light emitting elements 13 are mounted as in a package that emits full color light, the amount of heat generated on the mounting portion 11a and the wiring layer 17b is very large. Since such a large amount of heat is satisfactorily dissipated, the respective light emitting elements 13 are not damaged, and the specifications of the light emitting elements 13 such as voltage, light wavelength, and luminance can be satisfied.
[0033]
The light emitting device of the present invention includes a package of the present invention, a light emitting element 3 mounted on the mounting portion 1a and electrically connected to a wiring layer 7b around the mounting portion 1a, a silicone resin covering the light emitting element 3, and the like. , The heat generated from the light emitting element 3 can be satisfactorily dissipated, and the light emitting element 3 has high reliability without breakage and electrical malfunction. The transparent resin covering the light emitting element 3 may be provided so as to cover the light emitting element 3 and the periphery thereof, or may be provided so as to fill the concave portion 2a and cover the light emitting element 3.
[0034]
Note that the present invention is not limited to the above-described embodiment, and various changes may be made without departing from the scope of the present invention.
[0035]
【The invention's effect】
The light-emitting element housing package of the present invention has a mounting portion formed of a metallized layer in which a recess for housing the light-emitting element is formed on an upper surface of a base made of an aluminum nitride sintered body, and a light-emitting element is mounted on a bottom surface of the recess. And a wiring layer made of a metallization layer is formed near the mounting portion to electrically connect the electrode of the light emitting element, and the mounting portion has a first conductive layer smaller than the lower surface of the light emitting element. Since the formation part is provided and the wiring layer is provided with the second conductor non-formation part, the wiring layer is formed from the part where the bases of the first conductor non-formation part and the second conductor non-formation part are exposed. In addition, heat generated in the light emitting element can be satisfactorily radiated to the outside of the light emitting element housing package.
[0036]
The light emitting device of the present invention includes the light emitting element housing package of the present invention, a light emitting element mounted on the mounting portion and electrically connected to a wiring conductor around the mounting portion, and a transparent resin covering the light emitting element. With the provision, the heat generated in the light-emitting element can be satisfactorily dissipated, and the light-emitting element has high reliability without breakage or electrical malfunction.
[Brief description of the drawings]
FIG. 1 is a plan view showing an example of an embodiment of a light emitting element housing package of the present invention.
FIG. 2 is a cross-sectional view of the light emitting element housing package of FIG. 1;
FIG. 3 is a plan view showing another example of the embodiment of the light emitting element housing package of the present invention.
FIG. 4 is a cross-sectional view of the light emitting element storage package of FIG. 3;
FIG. 5 is a cross-sectional view illustrating an example of a conventional light emitting element storage package.
[Explanation of symbols]
1: base 2: frame 3: light emitting elements 7a, 7b: wiring layer 8a: first conductor non-formed portion 8b: second conductor non-formed portion

Claims (2)

窒化アルミニウム質焼結体から成る基体の上面に発光素子を収容するための凹部が形成され、該凹部の底面に前記発光素子が搭載されるメタライズ層から成る搭載部が設けられるとともに、該搭載部の近傍に、前記発光素子の電極が電気的に接続される、メタライズ層から成る配線層が形成されて成る発光素子収納用パッケージであって、前記搭載部は前記発光素子の下面よりも小さい第1の導体非形成部が設けられており、前記配線層は第2の導体非形成部が設けられていることを特徴とする発光素子収納用パッケージ。A concave portion for accommodating a light emitting element is formed on an upper surface of a base made of an aluminum nitride sintered body, and a mounting portion formed of a metallized layer on which the light emitting element is mounted is provided on a bottom surface of the concave portion. A light emitting element housing package formed by forming a wiring layer made of a metallization layer, in which an electrode of the light emitting element is electrically connected in the vicinity of the light emitting element, wherein the mounting portion is smaller than a lower surface of the light emitting element. A light emitting element housing package, wherein one conductor non-forming portion is provided, and the wiring layer is provided with a second conductor non-forming portion. 請求項1記載の発光素子収納用パッケージと、前記搭載部に搭載されるとともに前記搭載部の周囲の前記配線層に電気的に接続された発光素子と、該発光素子を覆う透明樹脂とを具備したことを特徴とする発光装置。2. The light-emitting element storage package according to claim 1, comprising: a light-emitting element mounted on the mounting section and electrically connected to the wiring layer around the mounting section; and a transparent resin covering the light-emitting element. A light-emitting device, comprising:
JP2003015992A 2003-01-24 2003-01-24 Light emitting element storage package and light emitting device Expired - Lifetime JP4383059B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003015992A JP4383059B2 (en) 2003-01-24 2003-01-24 Light emitting element storage package and light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003015992A JP4383059B2 (en) 2003-01-24 2003-01-24 Light emitting element storage package and light emitting device

Publications (2)

Publication Number Publication Date
JP2004228413A true JP2004228413A (en) 2004-08-12
JP4383059B2 JP4383059B2 (en) 2009-12-16

Family

ID=32903587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003015992A Expired - Lifetime JP4383059B2 (en) 2003-01-24 2003-01-24 Light emitting element storage package and light emitting device

Country Status (1)

Country Link
JP (1) JP4383059B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112039A1 (en) * 2005-04-01 2006-10-26 Matsushita Electric Industrial Co., Ltd. Surface mounting optical semiconductor device and method for manufacturing same
WO2006129690A1 (en) * 2005-05-31 2006-12-07 Showa Denko K.K. Substrate for led and led package
EP1806789A2 (en) * 2004-10-04 2007-07-11 Kabushiki Kaisha Toshiba Light emitting device, lighting equipment or liquid crystal display device using such light emitting device
JP2008172113A (en) * 2007-01-15 2008-07-24 Ngk Spark Plug Co Ltd Wiring substrate
JP2010183117A (en) * 2004-06-11 2010-08-19 Ngk Spark Plug Co Ltd Multiple patterning wiring board, and method of manufacturing the same
EP2780955A4 (en) * 2011-11-15 2015-07-15 Cree Inc Light emitting diode (led) packages and related methods
US9194567B2 (en) 2011-02-16 2015-11-24 Cree, Inc. High voltage array light emitting diode (LED) devices and fixtures
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
US9502617B2 (en) 2006-02-23 2016-11-22 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
JP2019216250A (en) * 2010-11-05 2019-12-19 ローム株式会社 Semiconductor light-emitting device
US11004890B2 (en) 2012-03-30 2021-05-11 Creeled, Inc. Substrate based light emitter devices, components, and related methods

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010183117A (en) * 2004-06-11 2010-08-19 Ngk Spark Plug Co Ltd Multiple patterning wiring board, and method of manufacturing the same
EP1806789A4 (en) * 2004-10-04 2009-09-02 Toshiba Kk Light emitting device, lighting equipment or liquid crystal display device using such light emitting device
US7812360B2 (en) 2004-10-04 2010-10-12 Kabushiki Kaisha Toshiba Light emitting device, lighting equipment or liquid crystal display device using such light emitting device
EP1806789A2 (en) * 2004-10-04 2007-07-11 Kabushiki Kaisha Toshiba Light emitting device, lighting equipment or liquid crystal display device using such light emitting device
US7867794B2 (en) 2005-04-01 2011-01-11 Panasonic Corporation Surface-mount type optical semiconductor device and method for manufacturing the same
JPWO2006112039A1 (en) * 2005-04-01 2008-11-27 松下電器産業株式会社 Surface-mount optical semiconductor device and manufacturing method thereof
US7705465B2 (en) 2005-04-01 2010-04-27 Panasonic Corporation Surface-mount type optical semiconductor device and method for manufacturing the same
WO2006112039A1 (en) * 2005-04-01 2006-10-26 Matsushita Electric Industrial Co., Ltd. Surface mounting optical semiconductor device and method for manufacturing same
JP2006339224A (en) * 2005-05-31 2006-12-14 Tanazawa Hakkosha:Kk Substrate for led and led package
WO2006129690A1 (en) * 2005-05-31 2006-12-07 Showa Denko K.K. Substrate for led and led package
US9502617B2 (en) 2006-02-23 2016-11-22 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
JP2008172113A (en) * 2007-01-15 2008-07-24 Ngk Spark Plug Co Ltd Wiring substrate
JP2019216250A (en) * 2010-11-05 2019-12-19 ローム株式会社 Semiconductor light-emitting device
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
US9194567B2 (en) 2011-02-16 2015-11-24 Cree, Inc. High voltage array light emitting diode (LED) devices and fixtures
US10043960B2 (en) 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
EP2780955A4 (en) * 2011-11-15 2015-07-15 Cree Inc Light emitting diode (led) packages and related methods
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US11004890B2 (en) 2012-03-30 2021-05-11 Creeled, Inc. Substrate based light emitter devices, components, and related methods
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device

Also Published As

Publication number Publication date
JP4383059B2 (en) 2009-12-16

Similar Documents

Publication Publication Date Title
JP2005197633A (en) High-power light-emitting-diode package and method of manufacturing the same
JP2004253404A (en) Package for housing light emitting element and light emitting device
JP4383059B2 (en) Light emitting element storage package and light emitting device
JP4072084B2 (en) Light emitting element storage package and light emitting device
JP2004319939A (en) Package for housing light emitting element and light emitting device
JP4132038B2 (en) Light emitting device
JP4369738B2 (en) Light emitting element storage package and light emitting device
JP2005191111A (en) Package for storing light emitting element, and light emitting device
JP2004152952A (en) Package for storing light emitting element and light emitting device
JP4295519B2 (en) Light emitting element storage package and light emitting device
JP4163982B2 (en) Light emitting element storage package and light emitting device
JP4132043B2 (en) Light emitting element storage package and light emitting device
JP2004207542A (en) Package for storing light emitting element and light emitting device
JP2004253711A (en) Package for housing light emitting element and light emitting device
JP4164006B2 (en) Light emitting element storage package and light emitting device
JP4167519B2 (en) Light emitting element storage package and light emitting device
JP2004259893A (en) Package for housing light-emitting element and light-emitting device
JP4336136B2 (en) Light emitting element storage package and light emitting device
JP2005243738A (en) Accommodating light-emitting device and package therefor
CN108028232B (en) Wiring substrate, electronic device, and electronic module
JP6626735B2 (en) Electronic component mounting board, electronic device and electronic module
JP2004327504A (en) Package for light emitting element and light emitting device
JP2005216962A (en) Package for containing light emitting element and light emitting device
JP4336153B2 (en) Light emitting element storage package and light emitting device
JP2004200410A (en) Package for housing light emitting element, and light emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060116

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090407

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090522

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090825

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090918

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121002

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4383059

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131002

Year of fee payment: 4

EXPY Cancellation because of completion of term