JP2003008074A - Surface mounting light emitting device and its manufacturing method - Google Patents

Surface mounting light emitting device and its manufacturing method

Info

Publication number
JP2003008074A
JP2003008074A JP2001193292A JP2001193292A JP2003008074A JP 2003008074 A JP2003008074 A JP 2003008074A JP 2001193292 A JP2001193292 A JP 2001193292A JP 2001193292 A JP2001193292 A JP 2001193292A JP 2003008074 A JP2003008074 A JP 2003008074A
Authority
JP
Japan
Prior art keywords
metal
thin
hole
plate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001193292A
Other languages
Japanese (ja)
Other versions
JP3991624B2 (en
Inventor
Akiyuki Kitano
晃行 北野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2001193292A priority Critical patent/JP3991624B2/en
Publication of JP2003008074A publication Critical patent/JP2003008074A/en
Application granted granted Critical
Publication of JP3991624B2 publication Critical patent/JP3991624B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a surface mounting light emitting device which can be made thin easily and its manufacturing method. SOLUTION: The surface mounting light emitting device comprises a package comprising a metal substrate 15 having a through hole 14 in the thickness direction and a thin flat plate 13 bonded to one side of the metal substrate to choke the through hole, and an LED chip 16 mounted on the thin flat plate in the through hole. The thin flat plate 13 is separated by an insulating separating part 24 of an insulating resin 13a into a first thin metal plate and a second thin metal plate. The insulating separating part is located on the bottom face of the through hole and the positive and negative electrodes of the LED chip are disposed oppositely to the first and second thin metal plates 13b and 13c, respectively, and connected therewith.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、スイッチ内照明、
フルカラーディスプレイ、液晶バックライト等の光源と
して用いられる表面実装型発光装置及びその製造方法に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a surface mount light emitting device used as a light source for a full color display, a liquid crystal backlight, etc., and a method for manufacturing the same.

【0002】[0002]

【従来の技術】スイッチ内照明、フルカラーディスプレ
イ、液晶バックライト等の光源として、従来から広く表
面実装型発光装置が用いられている。従来のチップ部品
型発光素子は、例えば、図11に示すように、基板10
1上にLEDチップ103を設け、基板101上におい
て透光性樹脂105を用いて封止されてなる。ここで、
基板101には、無電解及び電解メッキ等を用いて基板
101上面及び下面で対向するように互いに分離された
金属パターンからなるメッキ電極102が形成されてい
る。そして、基板101の上に、LEDチップ103が
接合され、そのLEDチップ103の負電極及び正電極
がそれぞれボンディングワイヤー104等によりメッキ
電極102に接続されている。
2. Description of the Related Art Surface-mounted light-emitting devices have been widely used as light sources for in-switch lighting, full-color displays, liquid crystal backlights, and the like. A conventional chip component type light emitting device is, for example, as shown in FIG.
The LED chip 103 is provided on the substrate 1, and the substrate 101 is sealed with the translucent resin 105. here,
On the substrate 101, there are formed plating electrodes 102 made of metal patterns that are separated from each other so as to face each other on the upper surface and the lower surface of the substrate 101 by using electroless plating and electrolytic plating. Then, the LED chip 103 is bonded onto the substrate 101, and the negative electrode and the positive electrode of the LED chip 103 are connected to the plating electrode 102 by the bonding wires 104 and the like, respectively.

【0003】また、図12に示す表面実装型発光装置
は、白色樹脂等からなる絶縁基板106の貫通孔内にフ
リップチップ方式で設置されたLEDチップ103を設
け、絶縁基板の貫通孔内において透光性樹脂105を用
いて封止されてなる。
Further, in the surface mount type light emitting device shown in FIG. 12, the LED chip 103 installed by the flip chip method is provided in the through hole of the insulating substrate 106 made of white resin or the like, and the LED chip 103 is transparent in the through hole of the insulating substrate. It is sealed using a light-sensitive resin 105.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、図11
に示す従来のチップ部品型発光素子は、機械的強度を確
保するため一定の基板の厚さを必要とし、かつその基板
101上に発光ダイオードチップ103をワイヤーボン
ディング方式で搭載する構造であるため、チップ部品型
発光素子の薄型化にも限界があった。また、発光ダイオ
ードチップ103から発せられた熱を伝導するのが主に
メッキ電極102のみであるために、放熱が十分でない
という問題点があった。また、前記透光性樹脂の端部周
囲にリフレクタのない構造となっており、集光が十分で
なかった。ここで、リフレクタとは発光ダイオードの端
部から発せられた光を反射させる側壁をいう。
However, as shown in FIG.
Since the conventional chip component type light emitting element shown in (1) requires a certain thickness of the substrate to secure mechanical strength, and has a structure in which the light emitting diode chip 103 is mounted on the substrate 101 by a wire bonding method, There is a limit to the thinning of the chip component type light emitting device. Further, since only the plated electrode 102 mainly conducts the heat generated from the light emitting diode chip 103, there is a problem that the heat radiation is not sufficient. Further, the structure has no reflector around the end of the translucent resin, and the light is not collected sufficiently. Here, the reflector means a side wall that reflects the light emitted from the end portion of the light emitting diode.

【0005】また、図12に示すフリップチップ方式で
発光ダイオードを設置する表面実装型の半導体素子は、
リフレクタ部分を含む絶縁基板106に白色樹脂等の熱
伝導性が悪い絶縁材料が使用されているため、発光部周
辺の熱を外側に十分に発散させることができない。よっ
て、発光素子内部に熱がこもることによる封止樹脂の変
色やチップの品質低下を招き、経時変化における発光効
率が低下し素子寿命の向上が図れなかった。また、青色
光などを発光させる場合には紫外線による絶縁基板その
ものの劣化が生じて、リフレクタ部分の光反射機能の低
下を招き、経時変化における品質低下が生じていた。し
かし、この構造の場合、放熱性を向上させようとすると
電極を含む導通部分13の部材の厚みを多く取る必要が
あり、その結果、製品全体の厚みが増すことで薄型化を
図ることが難しかった。
Further, the surface-mount type semiconductor device in which the light emitting diode is installed by the flip chip method shown in FIG.
Since the insulating substrate 106 including the reflector portion is made of an insulating material having poor thermal conductivity such as white resin, the heat around the light emitting portion cannot be sufficiently dissipated to the outside. As a result, heat is accumulated inside the light emitting element, causing discoloration of the encapsulating resin and deterioration of the chip quality, and the light emitting efficiency is reduced over time, so that the element life cannot be improved. Further, when emitting blue light or the like, the insulating substrate itself is deteriorated by ultraviolet rays, which causes deterioration of the light reflecting function of the reflector portion, resulting in deterioration of quality over time. However, in the case of this structure, in order to improve heat dissipation, it is necessary to increase the thickness of the member of the conductive portion 13 including the electrode, and as a result, it is difficult to reduce the thickness of the entire product by increasing the thickness thereof. It was

【0006】そこで、本発明は、放熱性が向上され薄型
化が容易な表面実装型発光装置とその製造方法を提供す
ることを目的とする。
Therefore, an object of the present invention is to provide a surface mount type light emitting device which is improved in heat dissipation and can be easily thinned, and a manufacturing method thereof.

【0007】[0007]

【課題を解決するための手段】以上の目的を達成するた
めに、本発明に係る表面実装型発光装置は、厚さ方向に
貫通孔を有する基板と、該貫通孔を塞ぐように上記基板
の一方の面に接合された薄型平板とからなるパッケージ
と、上記貫通孔内において上記薄型平板上に設けられた
LEDチップとを備えた表面実装型発光装置であって、
上記基板は金属材料からなり、上記薄型平板は絶縁性樹
脂からなる絶縁分離部にて第1の金属薄板と第2の金属
薄板とに分離されており、上記絶縁分離部は上記貫通孔
底面に位置し、上記LEDチップの正電極及び負電極は
上記第1の金属薄板及び上記第2の金属薄板とそれぞれ
対向して接続されていることを特徴とする。
In order to achieve the above object, a surface mount type light emitting device according to the present invention has a substrate having a through hole in a thickness direction, and a substrate having the through hole so as to close the through hole. A surface-mounted light-emitting device comprising a package consisting of a thin flat plate joined to one surface, and an LED chip provided on the thin flat plate in the through hole,
The substrate is made of a metal material, and the thin flat plate is separated into a first metal thin plate and a second metal thin plate by an insulating separating portion made of an insulating resin, and the insulating separating portion is formed on the bottom surface of the through hole. It is characterized in that the positive electrode and the negative electrode of the LED chip are connected so as to face the first thin metal plate and the second thin metal plate, respectively.

【0008】以上のように形成された上記表面実装型発
光装置は、上記金属基板と上記薄型平板とが接合された
パッケージを用いているので、上記貫通孔が形成された
上記金属基板により素子の機械的強度が維持でき、薄型
平板の厚さを従来例の基板に比較して薄くしても、機械
的強度を十分高く保つことができる。即ち、本発明に係
る上記表面実装型発光装置は、薄型平板の厚さを従来例
の基板に比較して薄くできる分、表面実装型発光装置全
体の厚さを薄くすることができる。
Since the surface mount type light emitting device formed as described above uses the package in which the metal substrate and the thin flat plate are bonded to each other, an element is formed by the metal substrate in which the through hole is formed. The mechanical strength can be maintained, and even if the thickness of the thin flat plate is thinner than that of the conventional substrate, the mechanical strength can be kept sufficiently high. That is, in the surface mounting type light emitting device according to the present invention, the thickness of the thin flat plate can be made thinner than that of the substrate of the conventional example, so that the surface mounting type light emitting device as a whole can be made thinner.

【0009】また、上記第1の金属薄板及び上記第2の
金属薄板の各厚さを図12の従来例における基板より十
分薄くでき、かつ該基板に形成されたメッキ電極膜に比
較すると厚くすることができる。従って、上記第1と第
2の金属薄板の熱伝導を従来のメッキ電極膜に比較して
大きくできるので、十分な放熱効果が得られ、発光素子
に高い電流を流すことができる。
Further, the thickness of each of the first thin metal plate and the second thin metal plate can be made sufficiently thinner than the substrate in the conventional example of FIG. 12, and thicker than the plated electrode film formed on the substrate. be able to. Therefore, the heat conduction of the first and second metal thin plates can be made larger than that of the conventional plated electrode film, so that a sufficient heat dissipation effect can be obtained and a high current can be passed through the light emitting element.

【0010】また、上記貫通孔の内部に複数のLEDチ
ップを備え、かつ上記第1の金属薄板が上記各LEDチ
ップに対応して複数の領域に絶縁分離されてなり、上記
各LEDチップの正電極はそれぞれ、絶縁分離された1
つの領域に接続されていてもよい。
A plurality of LED chips are provided inside the through hole, and the first thin metal plate is insulated and separated into a plurality of regions corresponding to the respective LED chips. Each electrode is isolated 1
It may be connected to one area.

【0011】また、上記パッケージの外側に面する上記
第1と第2の金属薄板の各表面にバンプを形成してもよ
い。このようにすると、上記表面実装型発光装置を実装
したときの接合強度(半田付け強度)をより高く維持す
ることができる。
Further, bumps may be formed on each surface of the first and second metal thin plates facing the outside of the package. With this configuration, the bonding strength (soldering strength) when the surface mount light emitting device is mounted can be maintained higher.

【0012】また、上記貫通孔は、上記薄型平板接合面
から一方の面に向かって広くなるテーパ形状の側面を有
してもよい。このようにテーパ形状の側面とすると、L
EDチップから出射された光を効率よく発光素子からと
りだすことができる。
The through hole may have a tapered side surface that widens from the thin flat plate bonding surface toward one surface. With such a tapered side surface, L
The light emitted from the ED chip can be efficiently extracted from the light emitting element.

【0013】また、上記基板は、表面に酸化膜を有して
もよい。表面に金属酸化物からなる膜を形成すると、絶
縁性がさらに高まる。
Further, the substrate may have an oxide film on its surface. When a film made of metal oxide is formed on the surface, the insulating property is further enhanced.

【0014】また、上記絶縁性樹脂は、上記パッケージ
の外側の表面において、上記第1と第2の金属薄板の間
から上記第1と第2の金属薄板の表面に延在するように
形成することが好ましい。このように形成すると、実装
時における第1の金属薄板と第2の金属薄板との短絡を
十分に防止することが可能である。
Further, the insulating resin is formed on the outer surface of the package so as to extend from between the first and second metal thin plates to the surface of the first and second metal thin plates. It is preferable. If formed in this way, it is possible to sufficiently prevent a short circuit between the first thin metal plate and the second thin metal plate during mounting.

【0015】また、本発明に係る表面実装型発光装置の
製造方法は、厚さ方向に貫通孔を有する基板と該貫通孔
を塞ぐように上記基板の一方の面に接合された薄型平板
とからなるパッケージと、上記貫通孔内において上記薄
型平板上に設けられたLEDチップとを備えた表面実装
型発光装置の製造方法であって、上記パッケージの薄型
平板となる金属薄板母材の各領域において、第1の金属
薄板と第2の金属薄板とを絶縁分離するための絶縁分離
部を形成する絶縁分離工程と、上記金属基板の一方の面
に酸化膜及び絶縁性接着材料の膜を形成し、厚さ方向に
貫通孔を形成する工程と、上記絶縁分離部が上記基板の
貫通孔底面に位置するように上記薄型平板と上記金属基
板の一方の面とを接合する接合工程と、同一面側に正電
極と負電極とを有するLEDチップの正電極と負電極を
上記第1の金属薄板及び前記第2の金属薄板にそれぞれ
対向させて接続する接続工程とを含むことを特徴とす
る。
Further, a method of manufacturing a surface mount light emitting device according to the present invention comprises a substrate having a through hole in a thickness direction and a thin flat plate bonded to one surface of the substrate so as to close the through hole. And a LED chip provided on the thin flat plate in the through hole, the method for manufacturing a surface mount light-emitting device, comprising: An insulating separation step of forming an insulating separation part for insulatingly separating the first metal thin plate and the second metal thin plate, and forming an oxide film and a film of an insulating adhesive material on one surface of the metal substrate. A step of forming a through hole in the thickness direction, and a step of joining the thin flat plate and one surface of the metal substrate so that the insulating separation portion is located on the bottom surface of the through hole of the substrate, the same surface Side has positive and negative electrodes The positive and negative electrodes of the LED chip, characterized in that it comprises a connection step of connecting to face respectively to the first metal sheet and the second sheet metal that.

【0016】上記絶縁分離工程は、上記薄型平板となる
上記各領域において、第1の金属薄板と第2の金属薄板
とを分離するための上記金属薄板母材を厚さ方向に貫通
する分離スリットを形成する工程と、上記分離スリット
に絶縁性樹脂を充填する工程と、上記金属薄板を実装面
側へ折り曲げる工程とを含み、上記分離スリットから上
記絶縁性樹脂が充填された絶縁分離部を有する薄型平板
を形成する工程である。
In the insulating and separating step, in each of the regions to be the thin flat plate, a separating slit for separating the first thin metal plate and the second thin metal plate through the thin metal plate base material in the thickness direction. And a step of filling the separation slit with an insulating resin, and a step of bending the thin metal plate to the mounting surface side, and having an insulating separation portion filled with the insulating resin from the separation slit. This is a step of forming a thin flat plate.

【0017】本製造方法を用いることにより、上記表面
実装型発光装置を容易に製造することができる。
By using this manufacturing method, the surface-mounted light emitting device can be easily manufactured.

【0018】[0018]

【発明の実施の形態】以下、図面を参照して本発明に係
る実施の形態について説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

【0019】実施の形態1.図1aは、本発明に係る実
施の形態1における表面実装型発光装置の構成を示す斜
視図である。本実施の形態1の表面実装型発光装置は、
厚さ方向に貫通する貫通孔14を有する金属基板15と
該貫通孔14を塞ぐように上記金属基板15の一方の面
に接合された薄型平板13とからなるパッケージ1の内
部に、窒化物系半導体を用いて構成されかつ同一面側に
n側(負)及びp側(正)の電極が形成された発光ダイ
オードチップ(LEDチップ)16が樹脂封止されるこ
とにより構成されている。
Embodiment 1. FIG. 1a is a perspective view showing a configuration of a surface-mounted light emitting device according to Embodiment 1 of the present invention. The surface mount light emitting device of the first embodiment is
Inside the package 1 including a metal substrate 15 having a through hole 14 penetrating in the thickness direction and a thin flat plate 13 bonded to one surface of the metal substrate 15 so as to close the through hole 14, a nitride-based material is provided. A light emitting diode chip (LED chip) 16 formed of a semiconductor and having n-side (negative) and p-side (positive) electrodes formed on the same side is resin-sealed.

【0020】詳細に説明すると、金属基板15は、熱伝
導性がよく、例えば厚さが0.06mm〜2.0mmの
アルミニウムあるいはアルミニウム合金からなり、中央
部に厚さ方向に貫通する貫通孔14を有する。基板に熱
伝導性のよい金属を使用すると、金属と密着している面
を通しての熱の放出が容易となる。従って、貫通孔内部
に熱がこもることがなくなり、熱によるチップの劣化及
び透光性封止樹脂の変色を防ぐことができる。ここで、
金属基板の材料をアルミニウムあるいはアルミニウム合
金とすることにより、リフレクタ部はほぼ全ての波長領
域の可視光に対して90%以上という高反射率を保ち、
基板に絶縁性樹脂を使用した場合のように紫外線によっ
て劣化することがない。さらに、アルミニウムは表面処
理のできる金属材料であるため、加工上も有利であるだ
けでなく、薄型平板との接着面にアルマイト処理を施し
た後加工すれば表面の絶縁効果により、絶縁性接着剤の
みを使用して薄型平板と接着するときより絶縁性がさら
に高まり好ましい。
More specifically, the metal substrate 15 has good thermal conductivity and is made of, for example, aluminum or aluminum alloy having a thickness of 0.06 mm to 2.0 mm, and the through hole 14 penetrating in the thickness direction at the central portion. Have. When a metal having good thermal conductivity is used for the substrate, heat can be easily released through the surface in close contact with the metal. Therefore, heat is not accumulated inside the through hole, and deterioration of the chip and discoloration of the translucent sealing resin due to heat can be prevented. here,
By using aluminum or aluminum alloy as the material of the metal substrate, the reflector portion maintains a high reflectance of 90% or more with respect to visible light in almost all wavelength regions,
It is not deteriorated by ultraviolet rays as in the case of using an insulating resin for the substrate. Furthermore, aluminum is a metal material that can be surface treated, so it is not only advantageous in terms of processing, but if it is processed after alumite treatment is applied to the adhesive surface with a thin flat plate, it will be an insulating adhesive due to the surface insulation effect. This is preferable because the insulating property is further increased than when using only a thin plate.

【0021】貫通孔14の横断面形状は図1に示すよう
に楕円であってもよいし、また楕円以外の円形又は方形
でもよい。すなわち、本発明は貫通孔14の横断面形状
によって限定されるものではなく、種々の形状の中から
任意に選定することができる。また、貫通孔14におい
ては、貫通孔14の開口径が金属基板15の一方の面
(薄型平板と接合される面)から他方の面に向かって大
きくなるように貫通孔の側面を傾斜させることが好まし
い。このように貫通孔14の側面を傾斜(好ましくは金
属基板の表面に対して45度傾斜)させると、LEDチ
ップ16から貫通孔14の側面に向かって出射された光
を側面で反射させて上方に出力することができるので、
LEDチップ16から出射された光を効率良く発光素子
からとりだすことができる。
The cross-sectional shape of the through hole 14 may be an ellipse as shown in FIG. 1, or may be a circle or a rectangle other than the ellipse. That is, the present invention is not limited by the cross-sectional shape of the through hole 14 and can be arbitrarily selected from various shapes. In addition, in the through hole 14, the side surface of the through hole is inclined so that the opening diameter of the through hole 14 increases from one surface of the metal substrate 15 (the surface bonded to the thin flat plate) toward the other surface. Is preferred. When the side surface of the through hole 14 is inclined (preferably inclined by 45 degrees with respect to the surface of the metal substrate) in this way, the light emitted from the LED chip 16 toward the side surface of the through hole 14 is reflected by the side surface and is directed upward. Can be output to
The light emitted from the LED chip 16 can be efficiently extracted from the light emitting element.

【0022】また、薄型平板13は絶縁分離部24にお
いて互いに絶縁された第1の金属薄板13bと第2の金
属薄板13cが絶縁性樹脂13aで保持されることによ
り一体化されて構成される。ここで、絶縁性樹脂の色
は、光に対する反射率の高い白色系統とすることが好ま
しい。これにより、第1と第2の金属薄板の間から第1
と第2の金属薄板の表面に延在するように絶縁性樹脂1
3aを形成したときでもLEDチップ16から出射され
た光を効率良く発光素子からとりだすことができる。
The thin flat plate 13 is constructed by integrally holding the first metal thin plate 13b and the second metal thin plate 13c, which are insulated from each other in the insulating separation portion 24, by the insulating resin 13a. Here, the color of the insulating resin is preferably a white system having a high reflectance for light. As a result, the first metal sheet between the first and second metal thin plates
And the insulating resin 1 so as to extend on the surface of the second thin metal plate.
Even when 3a is formed, the light emitted from the LED chip 16 can be efficiently extracted from the light emitting element.

【0023】そして、本実施の形態1において、パッケ
ージ1は、図1a及び図1bに示すように、絶縁分離部
24が貫通孔14の底面(直下)に位置するように、薄
型平板13が金属基板15の一方の面と接合されること
により構成される。本実施の形態1では、バンプを形成
することなく、第1の金属薄板13b及び第2の金属薄
板13cとを直接、実装基板の電極に接続するように構
成したが、パッケージ1の下面にバンプを形成するよう
に構成してもよい。これにより表面実装型発光装置を実
装したときの接合強度(半田付け強度)をより高く維持
することができ、また実装面に対する電気的接触性が向
上する。
In the first embodiment, as shown in FIGS. 1A and 1B, in the package 1, the thin flat plate 13 is made of metal so that the insulating separation portion 24 is located on the bottom surface (immediately below) of the through hole 14. It is configured by being bonded to one surface of the substrate 15. In the first embodiment, the first metal thin plate 13b and the second metal thin plate 13c are directly connected to the electrodes of the mounting substrate without forming bumps. May be formed. This makes it possible to maintain a higher bonding strength (soldering strength) when the surface-mounted light emitting device is mounted, and improve electrical contact with the mounting surface.

【0024】また、実施の形態1の表面実装型発光装置
において、透光性基板を用いて構成されかつ同一面側に
正電極と負電極とを有するLEDチップを用い、LED
チップの正電極と負電極のうちの一方の電極と第1の金
属薄板13b及びLEDチップの他方の電極と第2の金
属薄板13cとをそれぞれ対向させて導電性材料により
接続するようにする。ワイヤーを用いる必要がない分さ
らに素子全体の薄型化が可能である。以上のように貫通
孔14内に設けられたLEDチップ16を透光性樹脂
(図1においては図示していない。)を用いて封止す
る。
Further, in the surface-mounted light emitting device of the first embodiment, the LED chip which is constructed by using the translucent substrate and has the positive electrode and the negative electrode on the same surface side is used.
One of the positive electrode and the negative electrode of the chip, the first metal thin plate 13b, and the other electrode of the LED chip and the second metal thin plate 13c are opposed to each other and are connected by a conductive material. Since it is not necessary to use wires, it is possible to make the entire element thinner. As described above, the LED chip 16 provided in the through hole 14 is sealed with a light-transmitting resin (not shown in FIG. 1).

【0025】以上のように構成された実施の形態1の表
面実装型発光装置は、上述したような金属基板15と薄
型平板13とが接合されたパッケージ1を用いているの
で、金属基板15により素子全体の機械的強度を維持で
きる。これによって、薄型平板13の厚さを従来例の基
板に比較して薄くしても、機械的強度を十分高く保つこ
とができ、薄型化が可能である。また、従来は白色樹脂
の基板を使用していたため、放熱性を向上させるために
薄型平板の導電部を厚化する必要があったが、本発明で
は白色樹脂の基板ではなく、熱伝導性のよい金属材料を
使用することにより基板における放熱性が十分となるた
め、薄型平板のさらなる薄型化が可能である。
Since the surface mount light emitting device of the first embodiment configured as described above uses the package 1 in which the metal substrate 15 and the thin flat plate 13 as described above are bonded, the metal substrate 15 is used. The mechanical strength of the entire device can be maintained. As a result, even if the thickness of the thin flat plate 13 is thinner than that of the substrate of the conventional example, the mechanical strength can be kept sufficiently high, and the thinning is possible. In addition, since a white resin substrate has been conventionally used, it is necessary to thicken the conductive portion of the thin flat plate in order to improve heat dissipation. By using a good metal material, the heat dissipation of the substrate is sufficient, so that the thin flat plate can be further thinned.

【0026】また、本実施の形態1の表面実装型発光装
置では、第1の金属薄板13b及び第2の金属薄板13
cの各厚さを、図12の従来例における基板に形成され
たメッキ電極膜に比較すると厚くすることができる。従
って、上記第1の金属薄板13bと第2の金属薄板13
cの熱伝導を従来のメッキ電極膜に比較して大きくでき
るので、十分な放熱効果がえられ、発光素子に高い電流
を流すことができる。
Further, in the surface mount type light emitting device of the first embodiment, the first metal thin plate 13b and the second metal thin plate 13 are provided.
Each thickness of c can be made thicker than the plated electrode film formed on the substrate in the conventional example of FIG. Therefore, the first thin metal plate 13b and the second thin metal plate 13 are
Since the heat conduction of c can be made larger than that of the conventional plated electrode film, a sufficient heat dissipation effect can be obtained and a high current can be passed through the light emitting element.

【0027】以上、基板を白色樹脂から金属材料に代え
たことにより、さらなる放熱性の向上及び素子全体の薄
型化が可能となり、発光素子に長時間高い電流を流して
も従来品よりも高い発光効率が維持でき、素子の劣化を
抑えることができる。例えば、40mAで300時間電
流を流した場合の発光効率は、従来品と比較して20%
以上も高い。
As described above, by changing the substrate from the white resin to the metal material, it is possible to further improve the heat dissipation and reduce the thickness of the entire element, and even if a high current is applied to the light emitting element for a long time, the light emission is higher than that of the conventional product. The efficiency can be maintained and the deterioration of the device can be suppressed. For example, the luminous efficiency when current is applied at 40 mA for 300 hours is 20% compared to the conventional product.
The above is also high.

【0028】次に、図2〜図9を参照して、本実施の形
態1の表面実装型発光装置の製造方法について説明す
る。尚、以下の製造方法の説明では、1つの表面実装型
発光装置に対応する各構成要素を図示して示すが、実際
の製造工程においては、複数の構成要素が集合された状
態で各工程は行われる。 (第1の工程)第1の工程では、図2aに示すように、
パッケージ1の上部要素となる樹脂積層品からなる金属
基板15の下面に、エポキシ系の絶縁性接着剤を含む接
着フィルム19を熱圧着して貼り付け、ドリル等を用い
た機械加工あるいはレーザ光によるレーザ加工により貫
通孔14を形成する。ここで、貫通孔の大きさを貫通孔
内に設置するチップとほぼ同程度の大きさとする狭キャ
ビテイ構造とすることが好ましい。例えば、貫通孔の大
きさを貫通孔内に設置するチップとほぼ同程度の大きさ
とする狭キャビテイ構造とすると、図11に示されるワ
イヤーボンディング方式と同等のキャビテイ構造と比較
して、光度及びパワーとも約1.5倍増加する結果とな
った。またこの時、図2bに示すように特殊形状ドリル
等を用いて貫通孔14の側面を傾斜させリフレクタ部を
形成することにより、上述したように反射効率を高める
ことができる。
Next, with reference to FIGS. 2 to 9, a method for manufacturing the surface mount light emitting device of the first embodiment will be described. In the following description of the manufacturing method, each component corresponding to one surface-mounted light-emitting device is shown and shown, but in the actual manufacturing process, each process is performed with a plurality of components assembled. Done. (First Step) In the first step, as shown in FIG.
An adhesive film 19 containing an epoxy-based insulating adhesive is thermocompression-bonded and affixed to the lower surface of a metal substrate 15 made of a resin laminated product that is an upper element of the package 1, and is machined using a drill or laser light. The through hole 14 is formed by laser processing. Here, it is preferable to have a narrow cavity structure in which the size of the through hole is approximately the same as the size of the chip installed in the through hole. For example, if a narrow-cavity structure is used in which the size of the through-hole is approximately the same as the size of the chip installed in the through-hole, the luminous intensity and the power are higher than those of the wire-bonding method shown in FIG. Both results are about 1.5 times higher. Further, at this time, as shown in FIG. 2B, the reflection efficiency can be enhanced as described above by forming the reflector portion by inclining the side surface of the through hole 14 using a specially shaped drill or the like.

【0029】また、金属基板15にはアルミニウムある
いはアルミニウム合金等の白色金属を用い、かつ金属基
板15の上面を黒インク等で黒くすることが好ましい。
このようにすると、発光側の上面が黒色で光反射面が白
色となるので、フルカラーディスプレイ等に用いる時に
重要な要素となる画像の明暗の差を大きく、すなわちコ
ントラストを向上できる。
It is preferable that a white metal such as aluminum or aluminum alloy is used for the metal substrate 15, and the upper surface of the metal substrate 15 is blackened with black ink or the like.
By doing so, the upper surface on the light emitting side becomes black and the light reflecting surface becomes white, so that the difference in lightness and darkness of an image, which is an important factor when used in a full-color display or the like, that is, the contrast can be improved.

【0030】その他、金属基板の上面部を凹凸加工し、
金属部の表面積を増加させることでフィンの効果を持た
せると、さらに放熱性が向上して好ましい。 (第2の工程)第2の工程では、パッケージ1の薄型平
板13となる複数の領域を有する金属薄板母材の上記各
領域において、第1の金属薄板13bと第2の金属薄板
13cとを絶縁分離するための分離スリット24aを形
成する。
In addition, the upper surface of the metal substrate is processed to have irregularities,
It is preferable that the fin effect be provided by increasing the surface area of the metal part because the heat dissipation is further improved. (Second Step) In the second step, the first metal thin plate 13b and the second metal thin plate 13c are formed in each of the regions of the metal thin plate base material having a plurality of regions to be the thin flat plate 13 of the package 1. A separation slit 24a for insulating and separating is formed.

【0031】詳細には、例えばCu、りん青銅等の銅合
金又はSnメッキ銅泊などからなる金属薄板母材の各領
域において、金属薄板母材の裏面22に写真法を用い
て、第1の金属薄板13bと第2の金属薄板13cとを
絶縁分離するための分離スリット24aを形成する。 (第3の工程)第3の工程では、分離スリット24a
に、第1の金属薄板13bと第2の金属薄板13cとを
絶縁して保持する樹脂13aを金属基板15の接合面側
の分離スリット24aから充填する。このとき、第1と
第2の金属薄板の間から第1と第2の金属薄板の表面に
延在するように絶縁性樹脂を形成してもよい。次に、図
4aに示されるように金型等を用いて樹脂13aの形状
を整え固化させる。さらに、図4bに示されるように第
1の金属薄板13bと第2の金属薄板13cとを曲げ加
工(フォーミング)により分離スリット24aの反対側
まで機械的に折り曲げ、実装基板との接触面を形成す
る。 (第4の工程)第4の工程では、図5に示すように、分
離スリット24aに絶縁性樹脂が充填されてなる絶縁分
離部24が金属基板15の貫通孔内に位置するように金
属基板15と薄型平板13とを絶縁性接着剤を含む接着
フィルム19を介して張り合わす。この時、薄板平板1
3の接着側上面をケミカルエッチング法あるいはブラス
ト法により粗面化しておくことが好ましく、これにより
金属基板15との密着力を向上させることができる。ま
た、薄型平板13と金属基板15とが張り合わされてな
るパッケージ1は、金属基板15により十分な機械的強
度を有する。 (第5の工程)第5の工程では、図6に示すように、貫
通孔14内に位置する、第1の金属薄板13bの表面2
6b及び第2の金属薄板13cの表面26c、第1の金
属薄板13bと第2の金属薄板13cの内表面に無電解
メッキ又は電解メッキ法によりAgあるいはAu等から
なるメッキ層27を形成する。 (第6の工程)第6の工程では、図7に示すように、貫
通孔14内に位置する第1の金属薄板13b上にLED
チップを搭載し、LEDチップ16の正電極及び負電極
のうちの一方の電極を第1の金属薄板13bに接続し、
上記LEDチップの他方の電極を第2の金属薄板13c
に接続する。尚、上述した方法、例えば、透光性基板を
用いて構成された同一面側に正電極と負電極とを有する
LEDチップを用いる場合において、LEDチップの正
電極と第1の金属薄板13b及びLEDチップの負電極
と第2の金属薄板13cとをそれぞれ対向させて導電性
材料により接続する方法(フリップチップ法)を用いて
接続する。このフリップチップ法を用いるとワイヤーを
用いる必要がない分さらに薄型化が可能である。 (第7の工程)第7の工程では、図8に示すように、貫
通孔14の内部に透光性樹脂31を充填することによ
り、LEDチップ16を透光性樹脂31で封止する。こ
の時、パッケージ1の金属基板15の上面から透光性樹
脂31が突出するように凸レンズ形状に形成し、集光力
を高めるようにしてもよい。 (第8の工程)第8の工程では、図9に示すように、薄
型平板13の表面に、導電性材料からなるボールを配置
あるいはペースト状の導電性材料を印刷し、高温下にさ
らすことによりバンプ32を形成してもよい。またペー
スト状の導電性材料を印刷する場合、クリーム状の導電
性材料を、マスクを用いたスクリーン印刷法で印刷して
形成することができ、このような方法を用いると製造期
間の短縮が可能となる。尚、この第8の工程までの各工
程は、複数の表面実装型発光装置に対応する部分が集合
した状態で行われる。
More specifically, in each region of the metal thin plate base material made of, for example, Cu, a copper alloy such as phosphor bronze, or Sn-plated copper foil, the first surface of the back surface 22 of the metal thin plate base material is photographed by a first method. A separation slit 24a for insulating and separating the metal thin plate 13b and the second metal thin plate 13c is formed. (Third step) In the third step, the separation slit 24a
Then, the resin 13a that insulates and holds the first metal thin plate 13b and the second metal thin plate 13c is filled from the separation slit 24a on the bonding surface side of the metal substrate 15. At this time, the insulating resin may be formed so as to extend from between the first and second metal thin plates to the surfaces of the first and second metal thin plates. Next, as shown in FIG. 4a, the shape of the resin 13a is adjusted and solidified using a mold or the like. Further, as shown in FIG. 4b, the first thin metal plate 13b and the second thin metal plate 13c are mechanically bent to the opposite side of the separation slit 24a by bending (forming) to form a contact surface with the mounting substrate. To do. (Fourth Step) In the fourth step, as shown in FIG. 5, the insulating substrate 24 is formed so that the insulating slit 24a is filled with the insulating resin so that the insulating separating portion 24 is located in the through hole of the metal substrate 15. 15 and the thin flat plate 13 are attached to each other via an adhesive film 19 containing an insulating adhesive. At this time, the thin plate 1
It is preferable that the upper surface of the bonding side of No. 3 is roughened by a chemical etching method or a blasting method, whereby the adhesion with the metal substrate 15 can be improved. Further, the package 1 in which the thin flat plate 13 and the metal substrate 15 are bonded together has sufficient mechanical strength due to the metal substrate 15. (Fifth Step) In the fifth step, as shown in FIG. 6, the surface 2 of the first thin metal plate 13b located in the through hole 14 is formed.
6b and the surface 26c of the second thin metal plate 13c, and the inner surfaces of the first thin metal plate 13b and the second thin metal plate 13c are formed with a plating layer 27 made of Ag or Au by electroless plating or electrolytic plating. (Sixth Step) In the sixth step, as shown in FIG. 7, the LED is formed on the first thin metal plate 13b located in the through hole 14.
The chip is mounted, and one of the positive electrode and the negative electrode of the LED chip 16 is connected to the first thin metal plate 13b,
The other electrode of the LED chip is connected to the second metal thin plate 13c.
Connect to. In the method described above, for example, in the case of using an LED chip having a positive electrode and a negative electrode on the same surface side formed by using a transparent substrate, the positive electrode of the LED chip and the first metal thin plate 13b and The negative electrode of the LED chip and the second thin metal plate 13c are opposed to each other and are connected by a conductive material (flip chip method). By using this flip-chip method, it is possible to further reduce the thickness because there is no need to use wires. (Seventh Step) In the seventh step, as shown in FIG. 8, the LED chip 16 is sealed with the transparent resin 31 by filling the inside of the through hole 14 with the transparent resin 31. At this time, the translucent resin 31 may be formed in a convex lens shape so as to protrude from the upper surface of the metal substrate 15 of the package 1 to enhance the light collecting power. (Eighth step) In the eighth step, as shown in FIG. 9, balls made of a conductive material are arranged on the surface of the thin flat plate 13 or a paste-like conductive material is printed and exposed to a high temperature. The bump 32 may be formed by. When printing a paste-like conductive material, a cream-like conductive material can be printed by a screen printing method using a mask, and such a method can shorten the manufacturing period. Becomes The steps up to the eighth step are performed in a state where the parts corresponding to the plurality of surface mount light emitting devices are assembled.

【0032】以上のような第1〜第8の工程を含む製造
方法により、本発明に係る実施の形態1の表面実装型発
光装置を製造することができる。
The surface mounting type light emitting device of the first embodiment according to the present invention can be manufactured by the manufacturing method including the above first to eighth steps.

【0033】実施の形態2.次に本発明に係る実施の形
態2の表面実装型発光装置について説明する。
Embodiment 2. Next, a surface mount light emitting device according to a second embodiment of the present invention will be described.

【0034】本実施の形態2の表面実装型発光装置は、
実施の形態1と同様の考え方に基づいて作製されている
が、実施の形態2では、図10に示すように、例えば、
青色、緑色、赤色の3つのLEDチップ360を搭載で
きるパッケージ30を用いていることを特徴としてい
る。
The surface mount type light emitting device of the second embodiment is
Although it is manufactured based on the same concept as in the first embodiment, in the second embodiment, as shown in FIG.
It is characterized in that the package 30 that can mount three LED chips 360 of blue, green, and red is used.

【0035】すなわち、実施の形態2の表面実装型発光
装置は、厚さ方向に貫通する貫通孔34を有する金属基
板35と該貫通孔34を塞ぐように上記金属基板35の
一方の面に接合された薄型平板33とからなるパッケー
ジ30の内部に、3つのLEDチップ360が樹脂封止
されることにより構成されている。
That is, in the surface mounting type light emitting device of the second embodiment, the metal substrate 35 having the through hole 34 penetrating in the thickness direction and the one surface of the metal substrate 35 so as to close the through hole 34 are bonded. Three LED chips 360 are resin-sealed inside a package 30 including the thin flat plate 33.

【0036】ここで、貫通孔34の横断面形状は図10
に示すように楕円であってもよいし、また楕円以外の円
形又は方形でもよく、種々の形状の中から任意に選定す
ることができる。また、貫通孔34においては、LED
チップ36から出射された光を効率良くとりだすため
に、実施の形態1と同様に貫通孔34の側面を傾斜させ
ることが好ましい。
Here, the cross-sectional shape of the through hole 34 is shown in FIG.
The shape may be an ellipse as shown in FIG. 2, or a circle or a square other than the ellipse, and it can be arbitrarily selected from various shapes. Further, in the through hole 34, the LED
In order to efficiently take out the light emitted from the chip 36, it is preferable to incline the side surface of the through hole 34 as in the first embodiment.

【0037】また、薄型平板33は絶縁分離部44によ
って互いに分離された第1の金属薄板33aと3つの第
2の金属薄板33b,33c,33dとが絶縁性樹脂3
3eで絶縁されることにより一体化されて構成される。
ここで、本実施の形態2の薄型平板33においては、第
1の金属薄板33aと第2の金属薄板33b,33c,
33dにそれぞれ、バンプが形成されてもよい。尚、第
1の金属薄板33aと第2の金属薄板33b,33c,
33dの各下面(表面実装型発光装置において外側に面
する表面)は、バンプの部分を除いて、樹脂層で絶縁さ
れていることが好ましい。
In the thin flat plate 33, the first metal thin plate 33a and the three second metal thin plates 33b, 33c, 33d separated from each other by the insulating separation portion 44 are made of the insulating resin 3.
It is integrated by being insulated by 3e.
Here, in the thin flat plate 33 of the second embodiment, the first thin metal plate 33a and the second thin metal plates 33b, 33c,
A bump may be formed on each of 33d. The first thin metal plate 33a and the second thin metal plates 33b, 33c,
It is preferable that each lower surface of 33d (the surface facing the outside in the surface-mounted light emitting device) is insulated by a resin layer except for the bump portion.

【0038】そして、本実施の形態2において、パッケ
ージ30は、図10に示すように、少なくとも、第2の
金属薄板33bの一部、第2の金属薄板33cの一部、
第2の金属薄板33dの一部及び第1の金属薄板33a
の一部が貫通孔34の内側に位置するように、薄型平板
33と金属基板35とを接合して構成する。
In the second embodiment, as shown in FIG. 10, the package 30 includes at least a part of the second metal thin plate 33b and a part of the second metal thin plate 33c.
Part of the second metal thin plate 33d and the first metal thin plate 33a
The thin flat plate 33 and the metal substrate 35 are bonded to each other so that a part of them is located inside the through hole 34.

【0039】このように構成されたパッケージ30の貫
通孔34の内部において、LEDチップ360を、第1
の金属薄板33a上に接合し、LEDチップ36の正電
極及び負電極のうちの一方の電極を第1の金属薄板33
aに接続し、LEDチップ36の他方の電極をそれぞ
れ、第2の金属薄板33b,33c,33dにフリップ
チップ法で接続する。このフリップチップ法を用いると
ワイヤーを用いる必要がない分さらに薄型化が可能であ
る。
Inside the through hole 34 of the package 30 thus constructed, the LED chip 360
Of the positive electrode and the negative electrode of the LED chip 36 are bonded to the first metal thin plate 33a.
Then, the other electrode of the LED chip 36 is connected to the second metal thin plates 33b, 33c, 33d by the flip chip method. By using this flip-chip method, it is possible to further reduce the thickness because there is no need to use wires.

【0040】また、実施の形態2の表面実装型発光装置
は、実施の形態1と同様、貫通孔34に透光性樹脂が充
填されてLEDチップ360が封止されている。
Further, in the surface mount type light emitting device of the second embodiment, as in the first embodiment, the through hole 34 is filled with the light transmitting resin to seal the LED chip 360.

【0041】以上のように構成された実施の形態2の表
面実装型発光装置は、実施の形態1と同様に薄型化が可
能であり、加えて、例えば青色、緑色、赤色のLEDチ
ップ34を搭載することによりフルカラー表示が可能と
なる。
The surface-mounted light-emitting device of the second embodiment configured as described above can be thinned similarly to the first embodiment, and in addition, for example, blue, green, and red LED chips 34 are provided. By installing it, full-color display is possible.

【0042】尚、本実施の形態2の表面実装型発光装置
は、実施の形態1と同様の方法で作製することができ
る。
The surface-mounted light emitting device of the second embodiment can be manufactured by the same method as in the first embodiment.

【0043】変形例.以上の実施の形態1及び2では、
バンプを生成することなく、第1の金属薄板と第2の金
属薄板をそれぞれ直接実装基板の電極に接続したが、本
発明はこれに限らず、第8の工程により、バンプを形成
して実装基板の上に実装するようにしてもよい。
Modified example. In the first and second embodiments described above,
Although the first metal thin plate and the second metal thin plate are directly connected to the electrodes of the mounting substrate without generating bumps, the present invention is not limited to this, and the bumps are formed and mounted by the eighth step. You may make it mount on a board | substrate.

【0044】すなわち、図9に示すように、バンプを有
する第1の金属薄板13bと第2の金属薄板13cとか
らなる薄型平板を用いて構成してもよい。
That is, as shown in FIG. 9, a thin flat plate composed of a first metal thin plate 13b having bumps and a second metal thin plate 13c may be used.

【0045】一方、バンプを形成しないで構成する実施
の形態では、第1の金属薄板13bと第2の金属薄板1
3cにおいて、チップの接合面の両端に位置する部分に
切り欠き部を形成している。このように切り欠きを形成
することにより実装基板と接合したときに接合面積を大
きくできるので、接着強度を向上させることができる。
また、この切り欠きの部分に例えば、はんだ付けを容易
にする金属メッキを施し、この切り欠きの部分で接続す
るようにすることもできる。しかしながら、本発明にお
いてこの切り欠きは必須の構成要素でない。
On the other hand, in the embodiment in which the bumps are not formed, the first metal thin plate 13b and the second metal thin plate 1 are formed.
In 3c, notches are formed in the portions located at both ends of the bonding surface of the chip. By forming the notch in this way, the bonding area can be increased when bonded to the mounting substrate, and thus the adhesive strength can be improved.
Further, for example, metal plating that facilitates soldering may be applied to the cutout portion so that the connection is made at the cutout portion. However, the notch is not an essential component in the present invention.

【0046】以上の実施の形態1及び2では、薄型平板
13又は33と金属基板15又は33を組み合わせてパ
ッケージ1又は30を構成するようにした。このように
構成することにより、表面実装型発光装置単独で十分機
械的強を保つことができることは上述した。
In the above-described first and second embodiments, the thin flat plate 13 or 33 and the metal substrate 15 or 33 are combined to form the package 1 or 30. As described above, with such a configuration, the surface mount type light emitting device alone can maintain sufficient mechanical strength.

【0047】また、本発明は、実施の形態1及び2で説
明したLEDチップが1つ又は3つの場合に限定される
ものではなく、LEDチップの個数は任意に選択でき
る。例えば、赤色、黄色の2色であってもよく、このよ
うにすると発光色を広げることができる。
Further, the present invention is not limited to the case where one or three LED chips are described in the first and second embodiments, and the number of LED chips can be arbitrarily selected. For example, two colors of red and yellow may be used, and by doing so, the emission color can be expanded.

【0048】[0048]

【発明の効果】以上詳細に説明したように、本発明に係
る第1の表面実装型発光装置は、貫通孔を有する金属基
板と、絶縁分離部において互いに絶縁された第1と第2
の金属薄板が絶縁性樹脂を介してなる薄型平板とが、絶
縁分離部が貫通孔内に位置するように接合されてなるパ
ッケージを用いて構成されている。このように構成する
ことで、薄型平板の厚さを従来例の絶縁性材料からなる
基板や樹脂層に比較して薄くしても、金属基板により素
子の機械的強度を維持できる。また、金属基板により放
熱性が従来と比較して2倍以上向上するので全体として
の表面実装型発光装置の厚さを薄くすることができ、さ
らに紫外線を含む青色光を発光しても金属リフレクタ部
は劣化しないので発光素子の長寿命化が可能である。
As described above in detail, the first surface-mount light-emitting device according to the present invention has a metal substrate having a through hole, and first and second electrodes insulated from each other in an insulating separation portion.
And a thin flat plate formed by interposing an insulating resin between the thin metal plate and the thin flat plate so that the insulating separation portion is located in the through hole. With such a configuration, even if the thickness of the thin flat plate is thinner than that of the conventional insulating substrate or resin layer, the mechanical strength of the element can be maintained by the metal substrate. In addition, since the metal substrate improves the heat dissipation more than twice as compared with the conventional one, the thickness of the surface-mounted light emitting device as a whole can be reduced, and further the metal reflector can emit blue light including ultraviolet rays. Since the parts do not deteriorate, it is possible to extend the life of the light emitting element.

【0049】また、本発明に係る第2の表面実装型発光
装置は、第1と第2の金属薄板が絶縁分離部において絶
縁性樹脂により絶縁されてなる薄型平板を備え、該平板
上に上記LEDチップが搭載されて樹脂封止されている
ので、上記第1の表面実装型発光装置と同様に薄型にで
き、しかも構成を簡単にできる。
The second surface-mounted light-emitting device according to the present invention is provided with a thin flat plate in which the first and second thin metal plates are insulated by an insulating resin in the insulating and separating portion, and the above-mentioned flat plate is provided on the thin flat plate. Since the LED chip is mounted and resin-sealed, the LED chip can be thin as in the first surface-mounted light-emitting device, and the configuration can be simplified.

【0050】また、本発明に係る第1および第2の表面
実装型発光装置の製造方法によれば、第1および第2の
表面実装型発光装置を容易に製造することができる。
Further, according to the first and second surface mount light emitting device manufacturing methods of the present invention, the first and second surface mount light emitting devices can be easily manufactured.

【図面の簡単な説明】[Brief description of drawings]

【図1】 a…本発明に係る実施の形態1の表面実装型
発光装置の構成を示す斜視図である。 b…本発明に係る実施の形態1の表面実装型発光装置の
構成を示す断面図である。
FIG. 1A is a perspective view showing a configuration of a surface-mounted light emitting device according to a first embodiment of the present invention. b ... It is sectional drawing which shows the structure of the surface mount type light emitting device of Embodiment 1 which concerns on this invention.

【図2】 a…実施の形態1の製造方法における第1の
工程を説明するための模式的な断面図である。 b…実施の形態1の製造方法における第1の工程を説明
するための模式的な断面図である。
2A is a schematic cross-sectional view for explaining a first step in the manufacturing method according to the first embodiment. FIG. b ... It is a schematic cross-sectional view for explaining the first step in the manufacturing method of the first embodiment.

【図3】 実施の形態1の製造方法における第2の工程
を説明するための模式的な断面図である。
FIG. 3 is a schematic cross-sectional view for explaining a second step in the manufacturing method according to the first embodiment.

【図4】 a…実施の形態1の製造方法における第3の
工程を説明するための模式的な断面図である。 b…実施の形態1の製造方法における第3の工程を説明
するための模式的な断面図である。
FIG. 4 a is a schematic cross-sectional view for explaining a third step in the manufacturing method according to the first embodiment. b ... It is a schematic cross-sectional view for explaining a third step in the manufacturing method of the first embodiment.

【図5】 実施の形態1の製造方法における第4の工程
を説明するための模式的な断面図である。
FIG. 5 is a schematic cross-sectional view for explaining a fourth step in the manufacturing method according to the first embodiment.

【図6】 実施の形態1の製造方法における第5の工程
を説明するための模式的な断面図である。
FIG. 6 is a schematic cross-sectional view for explaining a fifth step in the manufacturing method according to the first embodiment.

【図7】 実施の形態1の製造方法における第6の工程
を説明するための模式的な断面図である。
FIG. 7 is a schematic cross-sectional view for explaining a sixth step in the manufacturing method according to the first embodiment.

【図8】 実施の形態1の製造方法における第7の工程
を説明するための模式的な断面図である。
FIG. 8 is a schematic cross-sectional view for explaining a seventh step in the manufacturing method according to the first embodiment.

【図9】 実施の形態1の製造方法における第8の工程
を説明するための模式的な断面図である。
FIG. 9 is a schematic cross-sectional view for explaining an eighth step in the manufacturing method according to the first embodiment.

【図10】 本発明に係る実施の形態2の表面実装型発
光装置の構成を示す斜視図である。
FIG. 10 is a perspective view showing a configuration of a surface-mounted light emitting device according to a second embodiment of the present invention.

【図11】 従来例の表面実装型発光装置の構成を示す
斜視図である。
FIG. 11 is a perspective view showing a configuration of a conventional surface mount light emitting device.

【図12】 図11とは構成が異なる従来例の表面実装
型発光装置の構成を示す斜視図である。
FIG. 12 is a perspective view showing a structure of a conventional surface mount light emitting device having a structure different from that of FIG.

【符号の説明】[Explanation of symbols]

1,30…パッケージ、 13,33…薄型平板、 13a,33e…絶縁性樹脂、 13b,33a…第1の金属薄板、 13c,33b,33c,33d…第2の金属薄板、 14,34…貫通孔、 15,35…金属基板、 16,36…LEDチップ、 32…バンプ、 19…接着フィルム、 24,44…絶縁分離部、 24a…分離スリット 27…メッキ層、 104…導電性ワイヤー、 31,105…透光性樹脂、 106…絶縁基板 360…窒化物系半導体を用いたLEDチップ、 361…青色LEDチップ、 362…緑色LEDチップ、 363…赤色LEDチップ。 1,30 ... Package, 13, 33 ... Thin flat plate, 13a, 33e ... Insulating resin, 13b, 33a ... the first thin metal plate, 13c, 33b, 33c, 33d ... second metal thin plate, 14, 34 ... through holes, 15, 35 ... Metal substrate, 16, 36 ... LED chips, 32 ... bump, 19 ... Adhesive film, 24, 44 ... Insulation separation part, 24a ... Separation slit 27 ... Plating layer, 104 ... conductive wire, 31, 105 ... Translucent resin, 106 ... Insulating substrate 360 ... LED chip using a nitride-based semiconductor, 361 ... Blue LED chip, 362 ... Green LED chip, 363 ... Red LED chip.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 厚さ方向に貫通孔を有する基板と、該貫
通孔を塞ぐように前記基板の一方の面に接合された薄型
平板とからなるパッケージと、前記貫通孔内において前
記薄型平板上に設けられたLEDチップとを備えた表面
実装型発光装置であって、 前記基板は金属材料からなり、 前記薄型平板は絶縁性樹脂からなる絶縁分離部にて第1
の金属薄板と第2の金属薄板とに分離されており、前記
絶縁分離部は前記貫通孔底面に位置し、 前記LEDチップの正電極及び負電極は前記第1の金属
薄板及び前記第2の金属薄板とそれぞれ対向して接続さ
れていることを特徴とする表面実装型発光装置。
1. A package comprising a substrate having a through hole in a thickness direction and a thin flat plate bonded to one surface of the substrate so as to close the through hole, and a thin flat plate on the thin flat plate in the through hole. A surface mount type light emitting device including an LED chip provided in the substrate, wherein the substrate is made of a metal material, and the thin flat plate is made of an insulating resin.
Is separated into a metal thin plate and a second metal thin plate, the insulating separation portion is located on the bottom surface of the through hole, and the positive electrode and the negative electrode of the LED chip are the first metal thin plate and the second metal thin plate. A surface-mounted light-emitting device, which is connected to a thin metal plate so as to face each other.
【請求項2】 前記貫通孔の内部に複数のLEDチップ
を備え、かつ前記第1の金属薄板が前記各LEDチップ
に対応して複数の領域に絶縁分離されてなり、前記各L
EDチップの正電極はそれぞれ、絶縁分離された1つの
領域に接続されている請求項1記載の表面実装型発光装
置。
2. A plurality of LED chips are provided inside the through hole, and the first thin metal plate is insulated and separated into a plurality of regions corresponding to the respective LED chips.
2. The surface mount light emitting device according to claim 1, wherein each positive electrode of the ED chip is connected to one region which is insulated and separated.
【請求項3】 前記パッケージの外側に面する前記第1
と第2の金属薄板の各表面にバンプを形成した請求項1
又は2記載の表面実装型発光装置。
3. The first surface facing the outside of the package.
A bump is formed on each surface of the first and second metal thin plates.
Alternatively, the surface-mounted light-emitting device according to item 2.
【請求項4】 前記貫通孔は、前記薄型平板接合面から
一方の面に向かって広くなるテーパ形状の側面を有する
請求項1〜3のうちのいずれか1つに記載の表面実装型
発光装置。
4. The surface mount light emitting device according to claim 1, wherein the through hole has a tapered side surface that widens from the thin flat plate bonding surface toward one surface. .
【請求項5】 前記基板は、表面に酸化膜を有する請求
項1〜4のうちのいずれか1つに記載の表面実装型発光
装置。
5. The surface mount light emitting device according to claim 1, wherein the substrate has an oxide film on its surface.
【請求項6】 前記絶縁性樹脂は、前記パッケージの外
側の表面において、前記第1と第2の金属薄板の間から
上記第1と第2の金属薄板の表面に延在している請求項
1〜5のうちのいずれか1項に記載の表面実装型発光装
置。
6. The insulating resin extends from the space between the first and second metal thin plates to the surface of the first and second metal thin plates on the outer surface of the package. The surface-mounted light-emitting device according to any one of 1 to 5.
【請求項7】 厚さ方向に貫通孔を有する基板と該貫通
孔を塞ぐように前記基板の一方の面に接合された薄型平
板とからなるパッケージと、前記貫通孔内において前記
薄型平板上に設けられたLEDチップとを備えた表面実
装型発光装置の製造方法であって、 前記パッケージの薄型平板となる金属薄板母材の各領域
において、第1の金属薄板と第2の金属薄板とを絶縁分
離するための絶縁分離部を形成する絶縁分離工程と、 前記金属基板の一方の面に酸化膜及び絶縁性接着材料の
膜を形成し、厚さ方向に貫通孔を形成する工程と、 前記絶縁分離部が前記基板の貫通孔底面に位置するよう
に前記薄型平板と前記金属基板の一方の面とを接合する
接合工程と、 同一面側に正電極と負電極とを有するLEDチップの正
電極と負電極を前記第1の金属薄板及び前記第2の金属
薄板にそれぞれ対向させて接続する接続工程とを含むこ
とを特徴とする表面実装型発光装置の製造方法。
7. A package comprising a substrate having a through hole in the thickness direction and a thin flat plate bonded to one surface of the substrate so as to close the through hole; and a thin flat plate on the thin flat plate in the through hole. A method for manufacturing a surface-mounted light-emitting device comprising an LED chip provided, wherein a first metal thin plate and a second metal thin plate are formed in each region of a metal thin plate base material which is a thin flat plate of the package. An insulation separation step of forming an insulation separation part for insulation separation; a step of forming an oxide film and a film of an insulating adhesive material on one surface of the metal substrate, and forming a through hole in the thickness direction, A bonding step of bonding the thin flat plate and one surface of the metal substrate so that the insulating separation portion is located on the bottom surface of the through hole of the substrate; and a positive LED chip having a positive electrode and a negative electrode on the same surface side. The electrode and the negative electrode are the first gold Method for producing a surface-mounted light emitting device which comprises a connection step of connecting each to face the sheet and the second sheet metal.
【請求項8】 前記絶縁分離工程は、前記薄型平板とな
る前記各領域において、第1の金属薄板と第2の金属薄
板とを分離するための前記金属薄板母材を厚さ方向に貫
通する分離スリットを形成する工程と、 前記分離スリットに絶縁性樹脂を充填する工程と、 前記金属薄板を実装面側へ折り曲げる工程とを含み、前
記分離スリットから前記絶縁性樹脂が充填された絶縁分
離部を有する薄型平板を形成する工程である請求項7記
載の表面実装型発光装置の製造方法。
8. The insulating separation step penetrates the metal thin plate base material for separating the first metal thin plate and the second metal thin plate in the thickness direction in each of the regions to be the thin flat plate. An insulating separation part filled with the insulating resin from the separation slit, including a step of forming a separation slit, a step of filling the separation slit with an insulating resin, and a step of bending the thin metal plate toward a mounting surface side. The method for manufacturing a surface-mounted light-emitting device according to claim 7, which is a step of forming a thin flat plate having.
JP2001193292A 2001-06-26 2001-06-26 Surface mount type light emitting device and manufacturing method thereof Expired - Fee Related JP3991624B2 (en)

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