JP3217322B2 - Chip component type light emitting device - Google Patents
Chip component type light emitting deviceInfo
- Publication number
- JP3217322B2 JP3217322B2 JP04051299A JP4051299A JP3217322B2 JP 3217322 B2 JP3217322 B2 JP 3217322B2 JP 04051299 A JP04051299 A JP 04051299A JP 4051299 A JP4051299 A JP 4051299A JP 3217322 B2 JP3217322 B2 JP 3217322B2
- Authority
- JP
- Japan
- Prior art keywords
- type light
- light emitting
- emitting device
- component type
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000011347 resin Substances 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims description 112
- 229910052751 metal Inorganic materials 0.000 claims description 112
- 238000000926 separation method Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 239000002313 adhesive film Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 238000007747 plating Methods 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000000191 radiation effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 102100027340 Slit homolog 2 protein Human genes 0.000 description 1
- 101710133576 Slit homolog 2 protein Proteins 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、スイッチ内照明、
フルカラーディスプレイ、液晶バックライト等の光源と
して用いられる表面実装用のチップ部品型発光素子に関
する。TECHNICAL FIELD The present invention relates to lighting in a switch,
The present invention relates to a surface-mounted chip component type light emitting device used as a light source for a full color display, a liquid crystal backlight, and the like.
【０００２】[0002]
【従来の技術】スイッチ内照明、フルカラーディスプレ
イ、液晶バックライト等の光源として、従来から広くチ
ップ部品型発光素子が用いられている。従来のチップ部
品型発光素子は、例えば、図１６に示すように、樹脂積
層品などからなる基板１０１上にＬＥＤチップ１０３を
設け、基板１０１上において透光性樹脂１０５を用いて
封止されてなる。ここで、基板１０１には、無電解及び
電解メッキ等を用いて基板１０１上面及び下面で対向す
るように互いに分離された金属パターンからなるメッキ
電極１０２が形成されている。そして、基板１０１上の
一方のメッキ電極１０２の上に、ＬＥＤチップ１０３が
接合され、そのＬＥＤチップ１０３の負電極及び正電極
がそれぞれボンディングワイヤー１０４等によりメッキ
電極１０２に接続されている。2. Description of the Related Art Conventionally, chip-type light-emitting elements have been widely used as light sources for lighting in switches, full-color displays, liquid crystal backlights, and the like. For example, as shown in FIG. 16, a conventional chip component type light emitting device is provided with an LED chip 103 provided on a substrate 101 made of a resin laminate or the like, and sealed on the substrate 101 using a light-transmitting resin 105. Become. Here, a plating electrode 102 made of a metal pattern separated from each other so as to oppose the upper surface and the lower surface of the substrate 101 is formed on the substrate 101 using electroless plating, electrolytic plating, or the like. The LED chip 103 is bonded on one of the plating electrodes 102 on the substrate 101, and the negative electrode and the positive electrode of the LED chip 103 are connected to the plating electrode 102 by bonding wires 104 and the like.
【０００３】また、図１７に示すチップ部品型発光素子
は、基板を用いないタイプであって、所定の形状に加工
したリードフレーム上にＬＥＤチップを接合して樹脂封
止をしている。すなわち、対向して配置されたリードフ
レーム１１２ａ，１１２ｂのうちの一方のリードフレー
ム１１２ｂ上にＬＥＤチップ１０３が接合され、そのＬ
ＥＤチップ１０３の負電極及び正電極がそれぞれボンデ
ィングワイヤー１０４等によりリードフレーム１１２
ａ，１１２ｂに接続され、全体が透光性樹脂１０９で樹
脂封止されている。The chip component type light emitting device shown in FIG. 17 is of a type that does not use a substrate, and has an LED chip bonded to a lead frame processed into a predetermined shape and sealed with a resin. That is, the LED chip 103 is bonded to one of the lead frames 112a and 112b arranged opposite to each other,
A negative electrode and a positive electrode of the ED chip 103 are respectively connected to a lead frame 112 by a bonding wire 104 or the like.
a, 112b, and the whole is resin-sealed with a translucent resin 109.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、図１６
に示す従来のチップ部品型発光素子は、機械的強度を確
保するため一定の基板の厚さを必要とし、かつその基板
１０１上に発光ダイオードチップ１０３を搭載する構造
であるため、チップ部品型発光素子の薄型化にも限界が
あった。また、発光ダイオードチップ１０３から発せら
れた熱を伝導するのが主にメッキ電極１０２のみである
ために、放熱が十分でないという問題点があった。However, FIG.
The conventional chip component type light emitting device shown in FIG. 1 requires a certain substrate thickness in order to secure mechanical strength, and has a structure in which a light emitting diode chip 103 is mounted on the substrate 101. There was a limit to the reduction in the thickness of the element. In addition, since only the plated electrode 102 conducts heat generated from the light emitting diode chip 103, there is a problem that heat is not sufficiently released.
【０００５】また、図１７に示す基板を用いていない従
来のチップ部品型発光素子は、図１６に比べて機械的強
度を保つために、発光ダイオードチップ１０３が搭載さ
れたリードフレーム１１２ｂの下部に、リードフレーム
を保持する十分の厚さの樹脂が必要となり、やはり薄型
化に一定の限界があるという問題点があった。A conventional chip component type light emitting device not using a substrate shown in FIG. 17 is provided under a lead frame 112b on which a light emitting diode chip 103 is mounted in order to maintain mechanical strength as compared with FIG. However, there is a problem that a resin having a sufficient thickness to hold the lead frame is required, and there is a certain limit to the reduction in thickness.
【０００６】そこで、本発明は薄型化が容易なチップ部
品型発光素子を提供することを目的とする。Accordingly, it is an object of the present invention to provide a chip component type light emitting device which can be easily made thin.
【０００７】[0007]
【課題を解決するための手段】以上の目的を達成するた
めに、本発明に係るチップ部品型発光素子は、厚さ方向
に貫通する貫通孔を有する絶縁基板と該貫通孔を塞ぐよ
うに上記絶縁基板の一方の面に接合された薄型平板とか
らなるパッケージと、上記貫通孔内において上記薄型平
板上に設けられたＬＥＤチップとを備えたチップ部品型
発光素子であって、上記薄型平板は絶縁分離部において
互いに分離された第１と第２の金属薄板が絶縁性樹脂で
接合されてなり、かつ上記薄型平板は上記絶縁分離部が
上記貫通孔内に位置するように上記絶縁基板と接着フィ
ルムによって接合され、上記ＬＥＤチップの正電極及び
負電極のうちの一方の電極が上記第１の金属薄板に接続
され、他方の電極が上記第２の金属薄板に接続されてい
ることを特徴とする。In order to achieve the above object, a chip component type light emitting device according to the present invention comprises an insulating substrate having a through hole penetrating in a thickness direction, and an insulating substrate having a through hole formed so as to cover the through hole. A chip component type light emitting device including a package including a thin flat plate bonded to one surface of an insulating substrate and an LED chip provided on the thin flat plate in the through hole, wherein the thin flat plate is The first and second thin metal plates separated from each other at the insulating separating portion are joined by an insulating resin, and the thin flat plate is bonded to the insulating substrate so that the insulating separating portion is located in the through hole. The LED chip is connected by a film, one of the positive electrode and the negative electrode of the LED chip is connected to the first metal sheet, and the other electrode is connected to the second metal sheet. You .
【０００８】以上のように構成された本発明に係るチッ
プ部品型発光素子は、上記絶縁基板と上記薄型平板とが
接着フィルムによって接合されたパッケージを用いてい
るので、上記貫通孔が形成された上記絶縁基板により素
子の機械的強度を維持でき、薄型平板の厚さを従来例の
基板に比較して薄くしても、機械的強度を十分高く保つ
ことができる。すなわち、本発明に係るチップ部品型発
光素子は、薄型平板の厚さを従来例の基板に比較して薄
くできる分、チップ部品型発光素子の厚さを薄くするこ
とができる。In the chip component type light emitting device according to the present invention having the above-described structure, since the package in which the insulating substrate and the thin flat plate are joined by an adhesive film is used, the through hole is formed. The mechanical strength of the element can be maintained by the insulating substrate, and the mechanical strength can be kept sufficiently high even if the thickness of the thin flat plate is reduced as compared with the conventional substrate. That is, in the chip component type light emitting device according to the present invention, the thickness of the chip component type light emitting device can be reduced because the thickness of the thin flat plate can be made thinner than the conventional substrate.
【０００９】また、上記第１の金属薄板及び上記第２の
金属薄板の各厚さを図１６の従来例における基板より十
分薄くでき、かつ該基板に形成されたメッキ電極膜に比
較すると厚くすることができる。従って、上記第１と第
２の金属薄板の熱伝導を従来のメッキ電極膜に比較して
大きくできるので、十分な放熱効果がえられ、発光素子
に高い電流を流すことができる。また、上記薄型平板上
に絶縁基板を張り合わせた構造としたので、図１７に示
す従来の構造のようにリードフレーム下部の樹脂部を必
要としないので、図１７の従来例の素子に比較しても容
易に薄型化が可能である。また、本チップ部品型発光素
子では、上記薄型平板の第１と第２の金属薄板に曲げ加
工をする必要がないので、上記薄型平板には該曲げ加工
に伴う残留応力を生じることがない。The thickness of each of the first metal sheet and the second metal sheet can be made sufficiently thinner than the substrate in the conventional example shown in FIG. 16 and larger than the plating electrode film formed on the substrate. be able to. Therefore, the heat conduction of the first and second metal sheets can be increased as compared with the conventional plated electrode film, so that a sufficient heat radiation effect can be obtained, and a high current can be passed to the light emitting element. Further, since the insulating substrate is laminated on the thin flat plate, a resin portion under the lead frame is not required unlike the conventional structure shown in FIG. 17, and therefore, compared to the conventional element shown in FIG. In addition, the thickness can be easily reduced. Further, in the present chip component type light emitting device, it is not necessary to bend the first and second thin metal plates of the thin flat plate, so that the thin flat plate does not generate residual stress due to the bending process.
【００１０】また、本発明に係るチップ部品型発光素子
では、上記第１と第２の金属薄板において、上記チップ
部品型発光素子の接合面の両端に位置する部分にそれぞ
れ切り欠きを形成するようにしてもよい。[0010] In the chip component light emitting device according to the present invention, the first and second thin metal plates may have cutouts formed at both ends of the bonding surface of the chip component light emitting device. It may be.
【００１１】さらに、本発明に係るチップ部品型発光素
子において、上記絶縁性樹脂は、上記パッケージの外側
の表面において、上記第１と第２の金属薄板の間から上
記第１と第２の金属薄板の表面に延在するように形成さ
れていることが好ましい。このようにすると、実装時に
おける第１の金属薄板と第２の金属薄板との短絡を防止
することができる。Further, in the chip component type light emitting element according to the present invention, the insulating resin is provided on the outer surface of the package from between the first and second metal thin plates. Preferably, it is formed so as to extend on the surface of the thin plate. By doing so, it is possible to prevent a short circuit between the first metal sheet and the second metal sheet during mounting.
【００１２】またさらに、本発明に係るチップ部品型発
光素子において、上記パッケージの外側に面する上記第
１と第２の金属薄板の各表面にバンプを形成するように
してもよい。Further, in the chip component type light emitting device according to the present invention, a bump may be formed on each surface of the first and second metal thin plates facing the outside of the package.
【００１３】また、本発明に係るチップ部品型発光素子
においては、上記第１と第２の金属薄板の外側の表面に
それぞれ凹部が形成され、上記バンプは、上記凹部に形
成されることが好ましい。このようにすると、上記チッ
プ部品型発光素子を実装したときの接合強度（はんだ付
け強度）をより高くすることができる。In the chip component light emitting device according to the present invention, it is preferable that a concave portion is formed on the outer surface of each of the first and second thin metal plates, and that the bump is formed in the concave portion. . This makes it possible to further increase the bonding strength (soldering strength) when the chip component type light emitting element is mounted.
【００１４】また、本発明に係るチップ部品型発光素子
において、上記バンプが形成された部分を除いて上記第
１と第２の金属薄板の外側の表面を実質的に覆うように
絶縁性樹脂を形成するようにしてもよい。Further, in the chip component light emitting device according to the present invention, an insulating resin is provided so as to substantially cover the outer surfaces of the first and second metal thin plates except for the portion where the bump is formed. It may be formed.
【００１５】また、本発明に係るチップ部品型発光素子
において、上記第１と第２の金属薄板は、Ｃｕ、りん青
銅、銅合金及びＳｎメッキ銅箔からなる群から選択され
た１種で構成することができる。Further, in the chip component type light emitting device according to the present invention, the first and second thin metal plates are made of one selected from the group consisting of Cu, phosphor bronze, copper alloy and Sn-plated copper foil. can do.
【００１６】また、本発明に係るチップ部品型発光素子
において、上記薄型平板の、上記絶縁基板と接着される
面が粗面化されていることが好ましい。Further, in the chip component type light emitting device according to the present invention, it is preferable that a surface of the thin flat plate to be bonded to the insulating substrate is roughened.
【００１７】また、本発明に係るチップ部品型発光素子
は、上記貫通孔の内部に複数のＬＥＤチップを備え、か
つ上記第１の金属薄板が上記各ＬＥＤチップに対応して
複数の領域に絶縁分離されてなり、上記各ＬＥＤチップ
の正電極はそれぞれ、絶縁分離された１つの領域に接続
されるようにしてもよい。Further, the chip component type light emitting device according to the present invention includes a plurality of LED chips inside the through hole, and the first thin metal plate is insulated in a plurality of regions corresponding to the respective LED chips. The positive electrode of each of the LED chips may be connected to one area that is insulated and separated.
【００１８】さらに、本発明に係るチップ部品型発光素
子において、上記絶縁基板の貫通孔は、上記ＬＥＤチッ
プから出力される光が上方に効率良く出射されるよう
に、上記絶縁基板の一方の面から他方の面に向かって広
くなるように上記貫通孔の側面を傾斜させることが好ま
しい。Further, in the chip component type light emitting device according to the present invention, the through hole of the insulating substrate is provided on one surface of the insulating substrate so that light output from the LED chip is efficiently emitted upward. It is preferable to incline the side surface of the through-hole so that the side surface becomes wider toward the other surface.
【００１９】また、本発明に係るチップ部品型発光素子
では、上記ＬＥＤチップの上記一方の電極と上記第１の
金属薄板及び上記ＬＥＤチップの上記他方の電極と上記
第２の金属薄板とをそれぞれワイヤーにより接続するよ
うにしてもよい。Further, in the chip component type light emitting device according to the present invention, the one electrode of the LED chip and the first metal sheet and the other electrode of the LED chip and the second metal sheet are respectively provided. You may make it connect by a wire.
【００２０】また、本発明に係るチップ部品型発光素子
において、上記ＬＥＤチップは同一面側に正電極と負電
極とを有し、上記正電極と上記負電極のうちの一方の電
極と上記第１の金属薄板及び他方の電極と上記第２の金
属薄板とをそれぞれ対向させて導電性材料により接続す
るようにしてもよい。Further, in the chip component type light emitting device according to the present invention, the LED chip has a positive electrode and a negative electrode on the same surface side, and one of the positive electrode and the negative electrode is connected to the first electrode. The first metal sheet and the other electrode and the second metal sheet may be opposed to each other and connected by a conductive material.
【００２１】以上の本発明に係るチップ部品型発光素子
は、実施の形態の所で後述する製造方法により製造する
ことができる。The above-described chip component type light emitting device according to the present invention can be manufactured by a manufacturing method described later in the embodiment.
【００２２】[0022]
【発明の実施の形態】以下、図面を参照して本発明に係
る実施の形態について説明する。 実施の形態１．図１は、本発明に係る実施の形態１のチ
ップ部品型発光素子の構成を示す斜視図である。本実施
の形態１のチップ部品型発光素子は、厚さ方向に貫通す
る貫通孔１４を有する絶縁基板１５と該貫通孔１４を塞
ぐように上記絶縁基板１５の一方の面に接合された薄型
平板１３とからなるパッケージ１の内部に、発光ダイオ
ードチップ（ＬＥＤチップ）１６が樹脂封止されること
により構成されている。Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 FIG. FIG. 1 is a perspective view showing a configuration of a chip component type light emitting device according to a first embodiment of the present invention. The chip component type light emitting device of the first embodiment is a thin flat plate joined to one surface of the insulating substrate 15 so as to cover the insulating substrate 15 having a through hole 14 penetrating in the thickness direction and the through hole 14. The light emitting diode chip (LED chip) 16 is sealed in a resin inside the package 1 including the light emitting diode chip 13.
【００２３】詳細に説明すると、絶縁基板１５は、例え
ば厚さが０．０６ｍｍ〜２．０ｍｍの樹脂積層品等から
なり、中央部に厚さ方向に貫通する貫通孔１４を有す
る。ここで、貫通孔１４の横断面形状は図１に示すよう
に楕円であってもよいし、また楕円以外の円形又は方形
でもよい。すなわち、本発明は貫通孔１４の横断面形状
によって限定されるものではなく、種々の形状の中から
任意に選定することができる。また、貫通孔１４におい
ては、貫通孔１４の開口径が絶縁基板１５の一方の面
（薄型平板と接合される面）から他方の面に向かって大
きくなるように貫通孔の側面を傾斜させることが好まし
い。このように貫通孔１４の側面を傾斜させると、ＬＥ
Ｄチップ１６から貫通孔１４の側面に向かって出射され
た光を側面で反射させて上方に出力することができるの
で、ＬＥＤチップ１６から出射された光を効率良く発光
素子からとりだすことができる。More specifically, the insulating substrate 15 is made of, for example, a resin laminated product having a thickness of 0.06 mm to 2.0 mm, and has a through hole 14 penetrating in the thickness direction at the center. Here, the cross-sectional shape of the through hole 14 may be an ellipse as shown in FIG. 1, or may be a circle or a square other than the ellipse. That is, the present invention is not limited by the cross-sectional shape of the through-hole 14, but can be arbitrarily selected from various shapes. In the through hole 14, the side surface of the through hole is inclined such that the opening diameter of the through hole 14 increases from one surface (the surface joined to the thin flat plate) of the insulating substrate 15 to the other surface. Is preferred. When the side surface of the through hole 14 is inclined in this manner, LE
Since the light emitted from the D chip 16 toward the side surface of the through hole 14 can be reflected on the side surface and output upward, the light emitted from the LED chip 16 can be efficiently extracted from the light emitting element.
【００２４】また、薄型平板１３は絶縁分離部２４にお
いて互いに分離された第１の金属薄板１３ｂと第２の金
属薄板１３ｃが絶縁性樹脂１３ａで接合されることによ
り一体化されて構成される。ここで、本実施の形態１の
薄型平板１３においては、第１の金属薄板１３ｂと第２
の金属薄板１３ｃにそれぞれ、バンプ１７ａとバンプ１
７ｂとが形成されている。尚、第１の金属薄板１３ｂと
第２の金属薄板１３ｃの各下面（チップ部品型発光素子
において外側に面する表面）は、バンプ１７ａ，１７ｂ
の部分を除いて、樹脂層で絶縁されている。The thin flat plate 13 is integrally formed by joining a first thin metal plate 13b and a second thin metal plate 13c separated from each other at an insulating separating portion 24 by an insulating resin 13a. Here, in the thin flat plate 13 of the first embodiment, the first thin metal plate 13b and the second thin
The bump 17a and the bump 1 are respectively formed on the thin metal plate 13c of FIG.
7b are formed. The lower surfaces of the first thin metal plate 13b and the second thin metal plate 13c (the surfaces facing outward in the chip component type light emitting element) are bumps 17a, 17b.
Except for the part, the resin layer is insulated.
【００２５】そして、本実施の形態１において、パッケ
ージ１は、図１に示すように、絶縁分離部２４が貫通孔
１４内（直下）に位置するように、薄型平板１３が絶縁
基板１５の一方の面と接合されることにより構成され
る。本実施の形態１では、パッケージ１の下面にバンプ
１７ａ，１７ｂを形成するようにしたが、本発明はこれ
に限らず、バンプを形成することなく、第１の金属薄板
１３ｂ及び第２の金属薄板１３ｃとを直接、実装基板の
電極に接続するように構成してもよい。In the first embodiment, as shown in FIG. 1, the package 1 has a thin flat plate 13 on one side of the insulating substrate 15 so that the insulating separation portion 24 is located in (directly below) the through hole 14. It is constituted by being joined with the surface of. In the first embodiment, the bumps 17a and 17b are formed on the lower surface of the package 1. However, the present invention is not limited to this, and the first metal thin plate 13b and the second metal You may comprise so that the thin plate 13c may be directly connected to the electrode of a mounting board.
【００２６】このように構成されたパッケージ１の貫通
孔１４の内部において、ＬＥＤチップ１６を、第１の金
属薄板１３ｂ上に接合し、ＬＥＤチップ１６の正電極と
負電極のうちの一方の電極を第１の金属薄板１３ｂに接
続し、ＬＥＤチップ１６の他方の電極を第２の金属薄板
１３ｃに接続する。尚、本発明において、ＬＥＤチップ
１６は第１の金属薄板１３ｂに接合することは必ずしも
必要ではなく、絶縁分離部２４上又は第２の金属薄板１
３ｃ上に接合するようにしてもよい。また、ＬＥＤチッ
プ１６の下面（第１の金属薄板１３ｂに接合する面）
に、ＬＥＤチップ１６の負電極又は正電極が形成されて
いる場合は、ＬＥＤチップ１６の下面を、導電性を有す
る材料を用いて金属薄板１３ｂ又は金属薄板１３ｃに接
合するようにして、互いに電気的に導通させるようにし
てもよい。The LED chip 16 is joined to the first thin metal plate 13b inside the through hole 14 of the package 1 thus configured, and one of the positive electrode and the negative electrode of the LED chip 16 is formed. Is connected to the first metal sheet 13b, and the other electrode of the LED chip 16 is connected to the second metal sheet 13c. In the present invention, it is not always necessary to join the LED chip 16 to the first thin metal plate 13b, and it is not necessary to bond the LED chip 16 to the first metal thin plate 13b.
3c. Also, the lower surface of the LED chip 16 (the surface bonded to the first metal thin plate 13b)
In the case where the negative electrode or the positive electrode of the LED chip 16 is formed, the lower surface of the LED chip 16 is joined to the metal thin plate 13b or 13c using a conductive material so that the LED chip 16 is electrically connected to each other. You may make it electrically conductive.
【００２７】また、実施の形態１のチップ部品型発光素
子において、透光性基板を用いて構成されかつ同一面側
に正電極と負電極とを有するＬＥＤチップを用いる場
合、ＬＥＤチップの正電極と負電極のうちの一方の電極
と第１の金属薄板１３ｂ及びＬＥＤチップの他方の電極
と第２の金属薄板１３ｃとをそれぞれ対向させて導電性
材料により接続するようにしてもよい。以上のように貫
通孔１４内に設けられたＬＥＤチップ１６を透光性樹脂
（図１においては図示していない。）を用いて封止す
る。In the chip component type light emitting device according to the first embodiment, when an LED chip formed using a translucent substrate and having a positive electrode and a negative electrode on the same surface side is used, the positive electrode of the LED chip may be used. One of the negative electrode and the negative electrode may be connected to the first metal sheet 13b and the other electrode of the LED chip and the second metal sheet 13c by a conductive material. As described above, the LED chip 16 provided in the through hole 14 is sealed with a light-transmitting resin (not shown in FIG. 1).
【００２８】以上のように構成された実施の形態１のチ
ップ部品型発光素子は、上述のような絶縁基板１５と薄
型平板１３とが接合されたパッケージ１を用いているの
で、絶縁基板１５により素子全体の機械的強度を維持で
きる。これによって、薄型平板１３の厚さを従来例の基
板に比較して薄くしても、機械的強度を十分高く保つこ
とができ、薄型化が可能である。また、実施の形態１の
チップ部品型発光素子は、薄型平板１３上に絶縁基板１
５を張り合わせたパッケージ１を用いているので、図１
７に示す従来の構造のようにリードフレーム下部の樹脂
部を必要としない分、図１７の従来例の素子に比較して
も容易に薄型化が可能である。図１４は、図１のＬＥＤ
チップ１６に代えて、窒化物系半導体を用いて構成され
かつ同一面側にｎ側（負）及びｐ側（正）の電極が形成
されたＬＥＤチップ１６０を用いて構成された実施の形
態１のチップ部品型発光素子の例を示す斜視図である。
この図１４のチップ部品型発光素子は、窒化物系半導体
を用いたＬＥＤチップ１６０を使用しているので、青色
又は緑色の発光をさせることができる。The chip component type light emitting device of the first embodiment configured as described above uses the package 1 in which the above-described insulating substrate 15 and the thin flat plate 13 are joined. The mechanical strength of the entire device can be maintained. Thereby, even if the thickness of the thin flat plate 13 is made thinner than the conventional substrate, the mechanical strength can be kept sufficiently high, and the thickness can be reduced. In addition, the chip component type light emitting element of the first embodiment has an insulating substrate 1 on a thin flat plate 13.
1 is used because the package 1 in which
Since the resin portion at the lower part of the lead frame is not required unlike the conventional structure shown in FIG. 7, the thickness can be easily reduced as compared with the conventional element shown in FIG. FIG. 14 shows the LED of FIG.
Embodiment 1 in which an LED chip 160 constituted by using a nitride-based semiconductor and having n-side (negative) and p-side (positive) electrodes formed on the same surface side is used instead of chip 16 It is a perspective view which shows the example of the chip component type light emitting element of FIG.
Since the LED light emitting device of FIG. 14 uses the LED chip 160 using a nitride-based semiconductor, it can emit blue or green light.
【００２９】また、本実施の形態１のチップ部品型発光
素子では、第１の金属薄板１３ｂ及び第２の金属薄板１
３ｃの各厚さを、図１６の従来例における基板に形成さ
れたメッキ電極膜に比較すると厚くすることができる。
従って、上記第１の金属薄板１３ｂと第２の金属薄板１
３ｃの熱伝導を従来のメッキ電極膜に比較して大きくで
きるので、十分な放熱効果がえられ、発光素子に高い電
流を流すことができる。また、本第１のチップ部品型発
光素子では、上記薄型平板の第１と第２の金属薄板に曲
げ加工をする必要がないので、上記薄型平板には該曲げ
加工に伴う残留応力を生じることがない。従って、本実
施の形態１のチップ部品型発光素子は、図１７の従来例
の発光素子に比較して、残留応力による発光素子の劣化
がなく、長寿命にできる。In the chip component type light emitting device of the first embodiment, the first metal sheet 13b and the second metal sheet 1b are used.
Each thickness of 3c can be made thicker than the thickness of the plated electrode film formed on the substrate in the conventional example of FIG.
Therefore, the first metal sheet 13b and the second metal sheet 1
Since the heat conduction of 3c can be increased as compared with the conventional plated electrode film, a sufficient heat radiation effect can be obtained, and a high current can flow through the light emitting element. Further, in the first chip component type light emitting device, it is not necessary to bend the first and second thin metal plates of the thin flat plate, so that the thin flat plate may generate residual stress due to the bending process. There is no. Therefore, the chip component type light emitting device of the first embodiment does not suffer from deterioration of the light emitting device due to residual stress and can have a longer life than the light emitting device of the conventional example of FIG.
【００３０】次に、図２〜図１０を参照して、本実施の
形態１のチップ部品型発光素子の製造方法について説明
する。尚、以下の製造方法の説明では、１つのチップ部
品型発光素子に対応する各構成要素を図示して示すが、
実際の製造工程においては、複数の構成要素が集合され
た状態で各工程は行われる。Next, with reference to FIGS. 2 to 10, a method of manufacturing the chip component type light emitting device of the first embodiment will be described. In the following description of the manufacturing method, each component corresponding to one chip component type light emitting element is shown and shown.
In an actual manufacturing process, each process is performed in a state where a plurality of components are assembled.
【００３１】（第１の工程）第１の工程では、図２に示
すように、パッケージ１の上部要素となる樹脂積層品か
らなる絶縁基板１５の下面に、エポキシ系の接着フィル
ム１９を熱圧着して貼り付け、ドリル等を用いた機械加
工あるいはレーザ光によるレーザ加工により貫通孔１４
を形成する。この時、特殊形状ドリル等を用いて貫通孔
１４の側面を傾斜させることにより、上述したように反
射効率を高めることができる。また、絶縁基板１５には
白色のものを用い、かつ基板１５の上面を黒インク等で
黒くすることが好ましい。このようにすると、発光側の
上面が黒色で光反射面が白色となるので、フルカラーデ
ィスプレイ等に用いる時に重要な要素となる画像の明暗
の差を大きく、すなわちコントラストを向上できる。(First Step) In the first step, as shown in FIG. 2, an epoxy-based adhesive film 19 is thermocompression-bonded to the lower surface of an insulating substrate 15 made of a laminated resin product as an upper element of the package 1. Through holes 14 by mechanical processing using a drill or the like or laser processing by laser light.
To form At this time, by inclining the side surface of the through hole 14 using a special shape drill or the like, the reflection efficiency can be increased as described above. Further, it is preferable that a white substrate is used for the insulating substrate 15 and the upper surface of the substrate 15 is blackened with black ink or the like. With this configuration, the upper surface on the light emitting side is black and the light reflecting surface is white, so that the difference in image brightness, which is an important factor when used in a full color display or the like, can be increased, that is, the contrast can be improved.
【００３２】（第２の工程）第２の工程では、パッケー
ジ１の薄型平板１３となる複数の領域を有する金属薄板
母材の上記各領域において、第１の金属薄板１３ｂと第
２の金属薄板１３ｃとを絶縁分離するための分離スリッ
ト２４ａを形成する。尚、図３には１つの領域を示して
いるが、分離スリット２４ａが形成された後の金属薄板
簿材の平面図は、図１０に示すようになる。詳細には、
例えばＣｕ、りん青銅等の銅合金又はＳｎメッキ銅泊な
どからなる金属薄板母材の各領域において、金属薄板母
材の裏面２２に写真法を用いてバンプ接続部を形成する
ための凹部２３と、第１の金属薄板１３ｂと第２の金属
薄板１３ｃとを絶縁分離するための分離スリット２４ａ
を形成する。この時、凹部２３の窪み深さは約０．１５
ｍｍ程度の深さにすることが好ましく、このようにする
とバンプとして用いられる導電性材料が例えば半田であ
れば、その半田で形成される半田ボールの直径が０．４
６ｍｍ〜０．７６ｍｍのものまで対応可能とでき、ファ
インピッチ化が可能となる。また、凹部２３を設けてバ
ンプを形成することにより、凹部２３の底面及び側面の
双方を接合面として接合部の面積を大きくできるので、
はんだ付け強度を向上させることができる。我々の検討
では、上述の深さの凹部２３により、はんだ付け強度を
２倍にすることができた。(Second Step) In the second step, a first thin metal plate 13b and a second thin metal plate are formed in each of the above regions of the thin metal base material having a plurality of regions to be the thin flat plates 13 of the package 1. A separation slit 24a is formed to insulate and separate 13c. Although FIG. 3 shows one area, a plan view of the sheet metal material after the separation slit 24a is formed is as shown in FIG. For details,
For example, in each region of a metal sheet base material made of a copper alloy such as Cu, phosphor bronze, or Sn-plated copper plating, a concave portion 23 for forming a bump connection portion using a photographic method on the back surface 22 of the metal sheet base material. Separation slit 24a for insulating and separating the first metal sheet 13b and the second metal sheet 13c.
To form At this time, the depth of the recess 23 is about 0.15.
In this case, when the conductive material used as the bump is, for example, solder, the diameter of the solder ball formed by the solder is 0.4 mm.
It is possible to correspond to a size of 6 mm to 0.76 mm, and a fine pitch can be achieved. Further, by forming the bumps by providing the concave portions 23, both the bottom surface and the side surfaces of the concave portions 23 can be used as the bonding surfaces to increase the area of the bonding portion.
The soldering strength can be improved. In our investigation, the soldering strength could be doubled by the recess 23 having the above-mentioned depth.
【００３３】（第３の工程）第３の工程では、分離スリ
ット２４ａに、第１の金属薄板１３ｂと第２の金属薄板
１３ｃとを絶縁して保持する樹脂１３ａを設ける。この
時、凹部２３のみにマスキングをして樹脂層を形成する
ことにより、凹部２３を除く第１の金属薄板１３ｂの下
面と側面及び第２の金属薄板１３ｃの下面と側面とに、
樹脂１３ａと連続した樹脂層２５を形成する。このよう
にすると、実装基板に実装したときに、バンプ１７ａと
バンプ１７ｂとの間における短絡を防止することができ
る。以上の第２の工程及び第３の工程により、金属薄板
母材の各領域に薄型平板１３が形成される。(Third Step) In a third step, a resin 13a for insulating the first thin metal plate 13b and the second thin metal plate 13c from each other is provided in the separation slit 24a. At this time, by forming a resin layer by masking only the concave portion 23, the lower surface and the side surface of the first metal thin plate 13b excluding the concave portion 23 and the lower surface and the side surface of the second metal thin plate 13c are formed.
A resin layer 25 continuous with the resin 13a is formed. This can prevent a short circuit between the bump 17a and the bump 17b when mounted on the mounting board. Through the above-described second and third steps, the thin flat plate 13 is formed in each region of the metal sheet base material.
【００３４】（第４の工程）第４の工程では、図５に示
すように、分離スリット２４ａに絶縁性樹脂が充填され
てなる絶縁分離部２４が絶縁基板１５の貫通孔内に位置
するように絶縁基板１５と薄型平板１３とを接着フィル
ム１９を介して張り合わす。この時、薄板平板１３の接
着側上面をケミカルエッチング法あるいはブラスト法に
より粗面化しておくことが好ましく、これにより絶縁基
板１５との密着力を向上させることができる。また、薄
型平板１３と絶縁基板１５とが張り合わされてなるパッ
ケージ１は、絶縁基板１５により十分な機械的強度を有
する。(Fourth Step) In the fourth step, as shown in FIG. 5, the insulating separating portion 24 in which the insulating resin is filled in the separating slit 24a is positioned in the through hole of the insulating substrate 15. Then, the insulating substrate 15 and the thin flat plate 13 are bonded together via the adhesive film 19. At this time, it is preferable that the upper surface on the bonding side of the thin plate 13 is roughened by a chemical etching method or a blast method, so that the adhesion to the insulating substrate 15 can be improved. Further, the package 1 in which the thin flat plate 13 and the insulating substrate 15 are bonded to each other has sufficient mechanical strength due to the insulating substrate 15.
【００３５】（第５の工程）第５の工程では、図６に示
すように、貫通孔１４内に位置する、第１の金属薄板１
３ｂの表面２６ｂ及び第２の金属薄板１３ｃの表面２６
ｃ、第１の金属薄板１３ｂと第２の金属薄板１３ｃの各
凹部２３の内表面に無電解メッキ又は電解メッキ法によ
りＡｇあるいはＡｕ等からなるメッキ層２７を形成す
る。尚、この時、凹部２３には、第１及び第２の金属薄
板とメッキ層２７との間に特に良好な電気的接触を得る
ためにＴｉあるいはＣｒからなる接合層又は金属間化合
物ができるのを防ぐためＮｉあるいはＰｄからなる拡散
防止層を構成することが好ましい。(Fifth Step) In a fifth step, as shown in FIG. 6, the first metal sheet 1 located in the through hole 14 is formed.
3b and the surface 26 of the second sheet metal 13c
c, A plating layer 27 made of Ag or Au is formed by electroless plating or electrolytic plating on the inner surface of each concave portion 23 of the first thin metal plate 13b and the second thin metal plate 13c. At this time, in order to obtain particularly good electrical contact between the first and second thin metal plates and the plating layer 27, a bonding layer or an intermetallic compound made of Ti or Cr is formed in the concave portion 23. It is preferable to form a diffusion prevention layer made of Ni or Pd in order to prevent this.
【００３６】（第６の工程）第６の工程では、図７に示
すように、貫通孔１４内に位置する第１の金属薄板１３
ｂ上にＬＥＤチップを搭載し、ＬＥＤチップ１６の正電
極及び負電極のうちの一方の電極を第１の金属薄板１３
ｂに接続し、上記ＬＥＤチップの他方の電極を第２の金
属薄板１３ｃに接続する。尚、このＬＥＤチップの電極
と第１又は第２の金属薄板との接続は図７に示すよう
に、導電性ワイヤー３０等を用いて接続することもでき
るし、上述した他の方法、例えば、透光性基板を用いて
構成された同一面側に正電極と負電極とを有するＬＥＤ
チップを用いる場合において、ＬＥＤチップの正電極と
第１の金属薄板１３ｂ及びＬＥＤチップの負電極と第２
の金属薄板１３ｃとをそれぞれ対向させて導電性材料に
より接続する方法（フリップチップ法）を用いて接続す
ることもできる。このフリップチップ法を用いるとワイ
ヤーを用いる必要がない分さらに薄型化が可能である。(Sixth Step) In the sixth step, as shown in FIG. 7, the first metal sheet 13 located in the through hole 14 is formed.
b, and one of the positive electrode and the negative electrode of the LED chip 16 is connected to the first metal plate 13.
b, and the other electrode of the LED chip is connected to the second thin metal plate 13c. The connection between the electrode of the LED chip and the first or second thin metal plate can be made by using a conductive wire 30 or the like as shown in FIG. 7, or by another method described above, for example, LED having a positive electrode and a negative electrode on the same surface side formed using a translucent substrate
When a chip is used, the positive electrode of the LED chip and the first metal sheet 13b and the negative electrode of the LED chip and the second
Can be connected using a method (flip chip method) of connecting the metal thin plates 13c with a conductive material while facing each other. The use of the flip-chip method can further reduce the thickness because there is no need to use a wire.
【００３７】（第７の工程）第７の工程では、貫通孔１
４の内部に透光性樹脂３１を充填することにより、ＬＥ
Ｄチップ１６を透光性樹脂３１で封止する。この時、パ
ッケージ１の絶縁基板１５の上面から透光性樹脂３１が
突出するように凸レンズ形状に形成し、集光力を高める
ようにしてもよい。(Seventh Step) In the seventh step, the through holes 1
4 is filled with the translucent resin 31, so that the LE
The D chip 16 is sealed with a translucent resin 31. At this time, the light-transmitting resin 31 may be formed in a convex lens shape so as to protrude from the upper surface of the insulating substrate 15 of the package 1 so as to increase the light condensing power.
【００３８】（第８の工程）第８の工程では、薄型平板
１３の凹部２３に、導電性材料からなるボールを配置あ
るいはペースト状の導電性材料を印刷し、高温下にさら
すことによりバンプ３２を形成する。またペースト状の
導電性材料を印刷する場合、クリーム状の導電性材料
を、マスクを用いたスクリーン印刷法で印刷して形成す
ることができ、このような方法を用いると製造期間の短
縮が可能となる。尚、この第８の工程までの各工程は、
複数のチップ部品型発光素子に対応する部分が集合した
状態で行われる。(Eighth Step) In the eighth step, a ball made of a conductive material is placed in the recess 23 of the thin flat plate 13 or a conductive material in the form of a paste is printed and exposed to a high temperature to form the bump 32. To form When printing a paste-like conductive material, a cream-like conductive material can be formed by printing by a screen printing method using a mask, and such a method can shorten a manufacturing period. Becomes Each step up to the eighth step is
This is performed in a state where parts corresponding to a plurality of chip component type light emitting elements are gathered.
【００３９】（第９の工程）第９の工程では、ダイヤモ
ンドカッター等によりチップ部品型発光素子の個片に分
割する。以上のような工程により、図１に示す構造の実
施の形態１のチップ部品型発光素子が製造される。尚、
本第９の工程を経ないで、複数のチップ部品型発光素子
を集合状態のままとし、複数の素子が所定の規則で配列
したディスプレイとして利用することもできる。以上の
ような第１〜第９の工程を含む製造方法により、本発明
に係る実施の形態１のチップ部品型発光素子を製造する
ことができる。(Ninth Step) In a ninth step, a chip-type light emitting device is divided into individual pieces by a diamond cutter or the like. Through the steps as described above, the chip component type light emitting device of Embodiment 1 having the structure shown in FIG. 1 is manufactured. still,
Without going through the ninth step, it is also possible to leave a plurality of chip component type light emitting elements in an aggregated state and use it as a display in which a plurality of elements are arranged according to a predetermined rule. By the manufacturing method including the first to ninth steps as described above, it is possible to manufacture the chip component type light emitting element of the first embodiment according to the present invention.
【００４０】実施の形態２．次に本発明に係る実施の形
態２のチップ部品型発光素子について説明する。本実施
の形態２のチップ部品型発光素子は、実施の形態１と同
様の考え方に基づいて作製されているが、実施の形態２
では、図１１に示すように、例えば、青色、緑色、赤色
の３つのＬＥＤチップ３６を搭載できるパッケージ３０
を用いていることを特徴としている。Embodiment 2 Next, a chip component type light emitting device according to a second embodiment of the present invention will be described. The chip component type light emitting device of the second embodiment is manufactured based on the same concept as in the first embodiment.
Then, as shown in FIG. 11, for example, a package 30 on which three LED chips 36 of blue, green, and red can be mounted.
It is characterized by using.
【００４１】すなわち、実施の形態２のチップ部品型発
光素子は、厚さ方向に貫通する貫通孔３４を有する絶縁
基板３５と該貫通孔３４を塞ぐように上記絶縁基板３５
の一方の面に接合された薄型平板３３とからなるパッケ
ージ３０の内部に、３つのＬＥＤチップ３６が樹脂封止
されることにより構成されている。ここで、貫通孔３４
の横断面形状は図１１に示すように楕円であってもよい
し、また楕円以外の円形又は方形でもよく、種々の形状
の中から任意に選定することができる。また、貫通孔３
４においては、ＬＥＤチップ３６から出射された光を効
率良くとりだすために、実施の形態１と同様に貫通孔３
４の側面を傾斜させることが好ましい。That is, the chip component type light emitting device of the second embodiment has an insulating substrate 35 having a through hole 34 penetrating in the thickness direction and the insulating substrate 35 so as to cover the through hole 34.
The three LED chips 36 are resin-sealed inside a package 30 including a thin flat plate 33 joined to one surface of the LED chip 36. Here, the through hole 34
May be elliptical as shown in FIG. 11, or may be a circle or square other than an ellipse, and can be arbitrarily selected from various shapes. Also, the through hole 3
4, in order to efficiently extract light emitted from the LED chip 36, the through holes 3 are formed in the same manner as in the first embodiment.
It is preferable to incline the side surface of No. 4.
【００４２】また、薄型平板３３は絶縁分離部４４によ
って互いに分離された第１の金属薄板３３ａと３つの第
２の金属薄板３３ｂ，３３ｃ，３３ｄとが絶縁性樹脂３
３ｅで接合されることにより一体化されて構成される。
ここで、本実施の形態２の薄型平板３３においては、第
１の金属薄板３３ａと第２の金属薄板３３ｂ，３３ｃ，
３３ｄにそれぞれ、バンプ３７が形成されている。尚、
第１の金属薄板３３ａと第２の金属薄板３３ｂ，３３
ｃ，３３ｄの各下面（チップ部品型発光素子において外
側に面する表面）は、バンプ３７の部分を除いて、樹脂
層で絶縁されていることが好ましい。The thin flat plate 33 is composed of a first thin metal plate 33a and three second thin metal plates 33b, 33c, 33d separated from each other by an insulating separating portion 44.
By being joined at 3e, it is constituted integrally.
Here, in the thin flat plate 33 of the second embodiment, the first thin metal plate 33a and the second thin metal plates 33b, 33c,
A bump 37 is formed on each of 33d. still,
The first sheet metal 33a and the second sheet metal 33b, 33
It is preferable that the lower surface of each of c and 33d (the surface facing the outside in the chip component type light emitting element) is insulated by a resin layer except for the bump 37.
【００４３】そして、本実施の形態２において、パッケ
ージ３０は、図１１に示すように、少なくとも、第２の
金属薄板３３ｂの一部、第２の金属薄板３３ｃの一部、
第２の金属薄板３３ｄの一部及び第１の金属薄板３３ａ
の一部が貫通孔３４の内側に位置するように、薄型平板
３３と絶縁基板３５とを接合して構成する。このように
構成されたパッケージ３０の貫通孔３４の内部におい
て、ＬＥＤチップ３６を、第１の金属薄板３３ａ上に接
合し、ＬＥＤチップ３６の正電極及び負電極のうちの一
方の電極を第１の金属薄板３３ａに接続し、ＬＥＤチッ
プ３６の他方の電極をそれぞれ、第２の金属薄板３３
ｂ，３３ｃ，３３ｄに接続する。尚、第１の金属薄板３
３ａ及び第２の金属薄板３３ｂ，３３ｃ，３３ｄの配置
を工夫して３つのＬＥＤチップの各電極をフリップチッ
プ法で接続するようにしてもよい。In the second embodiment, as shown in FIG. 11, the package 30 includes at least a part of the second thin metal plate 33b, a part of the second thin metal plate 33c,
Part of the second metal sheet 33d and the first metal sheet 33a
The thin flat plate 33 and the insulating substrate 35 are joined so that a part of the thin plate is located inside the through hole 34. The LED chip 36 is joined to the first thin metal plate 33a inside the through hole 34 of the package 30 thus configured, and one of the positive electrode and the negative electrode of the LED chip 36 is connected to the first electrode. And the other electrodes of the LED chip 36 are connected to the second metal sheet 33a, respectively.
b, 33c, 33d. The first metal sheet 3
The electrodes of the three LED chips may be connected by the flip-chip method by devising the arrangement of the 3a and the second metal thin plates 33b, 33c, 33d.
【００４４】また、実施の形態２のチップ部品型発光素
子は、実施の形態１と同様、貫通孔３４に透光性樹脂が
充填されてＬＥＤチップ３６が封止されている。Further, in the chip component type light emitting element of the second embodiment, as in the first embodiment, the through hole 34 is filled with a light transmitting resin and the LED chip 36 is sealed.
【００４５】以上のように構成された実施の形態２のチ
ップ部品型発光素子は、実施の形態１と同様に薄型化が
可能であり、加えて、例えば青色、緑色、赤色のＬＥＤ
チップ３４を搭載することによりフルカラー表示が可能
となる。図１５は、図１１の３つのＬＥＤチップ３４に
代えて、青色ＬＥＤチップ３６１、緑色ＬＥＤチップ３
６２及び赤色ＬＥＤチップ３６３を用いて構成されたフ
ルカラー表示が可能な実施の形態２のチップ部品型発光
素子の例を示す斜視図である。この図１５のチップ部品
型発光素子において、青色ＬＥＤチップ３６１及び緑色
ＬＥＤチップ３６２はいずれも窒化物系化合物半導体を
用いて構成されたＬＥＤチップであって、発光面である
同一面にｎ側及びｐ側の電極が形成されている。また、
窒化物系化合物半導体を用いて構成された青色ＬＥＤチ
ップ３６１及び緑色ＬＥＤチップ３６２においてｎ側及
びｐ側の電極は、発光面において対角線上に配置され、
好ましくは対角線上のすみ部に形成される。尚、本実施
の形態２のチップ部品型発光素子は、実施の形態１と同
様の方法で作製することができる。The chip component type light emitting device of the second embodiment configured as described above can be made thinner as in the first embodiment. In addition, for example, blue, green and red LEDs
By mounting the chip 34, full-color display becomes possible. FIG. 15 shows a blue LED chip 361 and a green LED chip 3 instead of the three LED chips 34 of FIG.
FIG. 13 is a perspective view showing an example of a chip-part-type light-emitting element according to a second embodiment capable of performing full-color display constituted by using a red LED chip and a red LED chip. In the chip component type light emitting device of FIG. 15, the blue LED chip 361 and the green LED chip 362 are both LED chips formed using a nitride-based compound semiconductor, and the n-side and A p-side electrode is formed. Also,
In the blue LED chip 361 and the green LED chip 362 configured using the nitride-based compound semiconductor, the n-side and p-side electrodes are arranged diagonally on the light emitting surface,
Preferably, it is formed in a diagonal corner. Note that the chip component type light emitting element of the second embodiment can be manufactured by the same method as that of the first embodiment.
【００４６】変形例．以上の実施の形態１及び２では、
バンプ１７ａ，１７ｂ，１８ａ，１８ｂを用いて実装基
板に実装するようにしたが、本発明はこれに限らず、バ
ンプを用いることなく、第１の金属薄板と第２の金属薄
板をそれぞれ直接実装基板の電極に接続するようにして
もよい。すなわち、図１２に示すように、樹脂５３ａ
と、樹脂５３ａによって互いに絶縁分離されかつそれぞ
れバンプを有していない第１の金属薄板５３ｂ及び第２
の金属薄板５３ｃとからなる薄型平板を用いて構成して
もよい。ここで、図１２に示した例では、第１の金属薄
板５３ｂ及び第２の金属薄板５３ｃにおいて、チップの
接合面の両端に位置する部分に切り欠き部を形成してい
る。このように切り欠きを形成することにより実装基板
と接合したときに接合面積を大きくできるので、接着強
度を向上させることができる。また、この切り欠きの部
分に例えば、はんだ付けを容易にする金属メッキを施
し、この切り欠きの部分で接続するようにすることもで
きる。しかしながら、本発明においてこの切り欠きは必
須の構成要素でない。Modified example. In the above first and second embodiments,
The bumps 17a, 17b, 18a, and 18b are used to mount on the mounting board. However, the present invention is not limited to this, and the first metal thin plate and the second metal thin plate are directly mounted without using bumps. You may make it connect to the electrode of a board | substrate. That is, as shown in FIG.
And a first metal thin plate 53b and a second metal
And a thin flat plate composed of the thin metal plate 53c. Here, in the example shown in FIG. 12, notches are formed in the first metal thin plate 53b and the second metal thin plate 53c at portions located at both ends of the chip bonding surface. By forming the cutouts in this way, the bonding area can be increased when bonded to the mounting board, so that the bonding strength can be improved. Further, for example, metal plating for facilitating soldering may be applied to the notched portion, and connection may be made at the notched portion. However, this notch is not an essential component in the present invention.
【００４７】以上の実施の形態１及び２では、薄型平板
１３又は３３と絶縁基板１５又は３３を組み合わせてパ
ッケージ１又は３０を構成するようにした。このように
構成することにより、チップ部品型発光素子単独で十分
機械的強を保つことができることは上述した。しかしな
がら、薄型平板１３又は３３上にＬＥＤチップを搭載
し、絶縁基板１５又は３０を用いることなく、搭載され
たＬＥＤチップを透光性樹脂で封止して、チップ部品型
発光素子を構成することも可能である。すなわち、図１
３に示すように、樹脂６３ａと、樹脂６３ａによって互
いに絶縁分離された第１の金属薄板６３ｂ及び第２の金
属薄板６３ｃとからなる薄型平板を用い、貫通孔を有す
る基板を用いることなく、薄型平板上に直接、透光性樹
脂６１を形成することにより構成してもよい。このよう
にすると実施の形態１及び２に比較して構成を簡単にで
き、薄型のチップ部品型発光素子を安価にできる。尚、
この図１３の構成においても、バンプを設けて接続する
ようにしても良いし、第１の金属薄板６３ｂ及び第２の
金属薄板６３ｃを直接、実装基板の電極に接続するよう
にしてもよい。また、本発明は、実施の形態１及び２で
説明したＬＥＤチップが１つ又は３つの場合に限定され
るものではなく、ＬＥＤチップの個数は任意に選択でき
る。例えば、赤色、黄色の２色であってもよく、このよ
うにすると発光色を広げることができる。In the first and second embodiments, the package 1 or 30 is configured by combining the thin flat plate 13 or 33 and the insulating substrate 15 or 33. As described above, with this configuration, the chip-part-type light-emitting element alone can maintain sufficient mechanical strength. However, an LED chip is mounted on the thin flat plate 13 or 33, and the mounted LED chip is sealed with a translucent resin without using the insulating substrate 15 or 30, thereby forming a chip component type light emitting element. Is also possible. That is, FIG.
As shown in FIG. 3, a thin flat plate including a resin 63a and a first thin metal plate 63b and a second thin metal plate 63c that are insulated and separated from each other by the resin 63a is used. It may be configured by forming the translucent resin 61 directly on a flat plate. By doing so, the configuration can be simplified as compared with Embodiments 1 and 2, and a thin chip component type light emitting element can be inexpensive. still,
Also in the configuration of FIG. 13, a bump may be provided for connection, or the first thin metal plate 63b and the second thin metal plate 63c may be directly connected to the electrodes of the mounting board. Further, the present invention is not limited to the case where the number of LED chips described in Embodiments 1 and 2 is one or three, and the number of LED chips can be arbitrarily selected. For example, two colors of red and yellow may be used. In this case, the emission color can be expanded.
【００４８】[0048]
【発明の効果】以上詳細に説明したように、本発明に係
る第１のチップ部品型発光素子は、上記貫通孔を有する
上記絶縁基板と絶縁分離部において互いに分離された第
１と第２の金属薄板が絶縁性樹脂で接合されてなる薄型
平板とが、上記絶縁分離部が上記貫通孔内に位置するよ
うに接合されてなるパッケージを用いて構成されてい
る。このように構成することで、薄型平板の厚さを従来
例の基板や樹脂層に比較して薄くしても、上記絶縁基板
により素子の機械的強度を維持でき、全体としてのチッ
プ部品型発光素子の厚さを薄くすることができる。As described in detail above, the first chip component type light emitting device according to the present invention comprises the first substrate and the second substrate separated from each other at the insulating substrate having the through hole and the insulating separation portion. A thin flat plate formed by bonding a thin metal plate with an insulating resin is used by using a package formed by bonding such that the insulating separation portion is located in the through hole. With this configuration, even if the thickness of the thin flat plate is smaller than that of the conventional substrate or resin layer, the mechanical strength of the element can be maintained by the insulating substrate, and the chip component type light emission as a whole can be maintained. The thickness of the element can be reduced.
【００４９】また、本発明に係る第２のチップ部品型発
光素子は、絶縁分離部において互いに分離された第１と
第２の金属薄板が絶縁分離部において絶縁性樹脂により
接合されてなる薄型平板を備え、該平板上に上記ＬＥＤ
チップが搭載されて樹脂封止されているので、上記第１
のチップ部品型発光素子と同様に薄型にできしかも構成
を簡単にできる。A second chip component type light emitting device according to the present invention is a thin flat plate in which first and second thin metal plates separated from each other at an insulating separation portion are joined by an insulating resin at the insulating separation portion. And the LED on the flat plate
Since the chip is mounted and sealed with resin, the first
As in the case of the chip component type light emitting element, the thickness can be reduced and the configuration can be simplified.
【００５０】また、本発明に係る第１および第２のチッ
プ部品型発光素子の製造方法によれば、第１および第２
のチップ部品型発光素子を容易に製造することができ
る。Further, according to the first and second methods for manufacturing a chip component type light emitting device according to the present invention, the first and second chip component type light emitting devices are manufactured.
Can easily be manufactured.
【図１】 本発明に係る実施の形態１のチップ部品型発
光素子の構成を示す斜視図である。FIG. 1 is a perspective view showing a configuration of a chip component type light emitting device according to a first embodiment of the present invention.
【図２】 実施の形態１の製造方法における第１の工程
を説明するための模式的な断面図である。FIG. 2 is a schematic cross-sectional view for explaining a first step in the manufacturing method according to the first embodiment.
【図３】 実施の形態１の製造方法における第２の工程
を説明するための模式的な断面図である。FIG. 3 is a schematic cross-sectional view for explaining a second step in the manufacturing method according to the first embodiment.
【図４】 実施の形態１の製造方法における第３の工程
を説明するための模式的な断面図である。FIG. 4 is a schematic cross-sectional view for explaining a third step in the manufacturing method according to the first embodiment.
【図５】 実施の形態１の製造方法における第４の工程
を説明するための模式的な断面図である。FIG. 5 is a schematic cross-sectional view for explaining a fourth step in the manufacturing method according to the first embodiment.
【図６】 実施の形態１の製造方法における第５の工程
を説明するための模式的な断面図である。FIG. 6 is a schematic cross-sectional view for describing a fifth step in the manufacturing method according to the first embodiment.
【図７】 実施の形態１の製造方法における第６の工程
を説明するための模式的な断面図である。FIG. 7 is a schematic cross-sectional view for explaining a sixth step in the manufacturing method according to the first embodiment.
【図８】 実施の形態１の製造方法における第７の工程
を説明するための模式的な断面図である。FIG. 8 is a schematic cross-sectional view for explaining a seventh step in the manufacturing method according to the first embodiment.
【図９】 実施の形態１の製造方法における第８の工程
を説明するための模式的な断面図である。FIG. 9 is a schematic cross-sectional view for explaining an eighth step in the manufacturing method according to the first embodiment.
【図１０】 実施の形態１の製造方法における第２の工
程における金属薄板母材の平面図である。FIG. 10 is a plan view of the sheet metal base material in a second step in the manufacturing method according to the first embodiment.
【図１１】 本発明に係る実施の形態２のチップ部品型
発光素子の構成を示す斜視図である。FIG. 11 is a perspective view showing a configuration of a chip component type light emitting device according to a second embodiment of the present invention.
【図１２】 本発明に係る変形例のチップ部品型発光素
子の構成を示す斜視図である。FIG. 12 is a perspective view showing a configuration of a chip-part-type light-emitting device according to a modification of the present invention.
【図１３】 本発明に係る図１２とは異なる変形例のチ
ップ部品型発光素子の構成を示す斜視図である。FIG. 13 is a perspective view showing a configuration of a chip component type light emitting device of a modified example different from FIG. 12 according to the present invention.
【図１４】 本発明に係る実施の形態１のチップ部品型
発光素子において、窒化物系半導体ＬＥＤチップを使用
した例を示す斜視図である。FIG. 14 is a perspective view showing an example in which a nitride-based semiconductor LED chip is used in the chip-part light emitting device according to the first embodiment of the present invention.
【図１５】 本発明に係る実施の形態２のチップ部品型
発光素子において、窒化物系半導体を用いた青色及び緑
色ＬＥＤチップを使用した例を示す斜視図である。FIG. 15 is a perspective view showing an example in which blue and green LED chips using a nitride-based semiconductor are used in the chip component light emitting device according to the second embodiment of the present invention.
【図１６】 従来例のチップ部品型発光素子の構成を示
す斜視図である。FIG. 16 is a perspective view showing a configuration of a conventional chip component type light emitting device.
【図１７】 図１６とは構成が異なる従来例のチップ部
品型発光素子の構成を示す斜視図である。FIG. 17 is a perspective view showing a configuration of a conventional chip component type light emitting device having a different configuration from FIG.
１，３０…パッケージ、１３，３３…薄型平板、１３
ａ，３３ｅ，５３ａ，６３ａ…絶縁性樹脂、１３ｂ，３
３ａ，５３ｂ，６３ｂ…第１の金属薄板、１３ｃ，３３
ｂ，３３ｃ，３３ｄ，５３ｃ，６３ｃ…第２の金属薄
板、１４，３４…貫通孔、１５，３５…絶縁基板、１
６，３６…ＬＥＤチップ、１７ａ，１７ｂ，１８ａ，１
８ｂ，３７…バンプ、１９…接着フィルム、２３…凹
部、２４，４４…絶縁分離部、２４ａ…分離スリット２
５…樹脂層、２７…メッキ層、３０…導電性ワイヤー、
３１…透光性樹脂、１６０…窒化物系半導体を用いたＬ
ＥＤチップ、３６１…青色ＬＥＤチップ、３６２…緑色
ＬＥＤチップ、３６３…赤色ＬＥＤチップ。1, 30: package, 13, 33: thin flat plate, 13
a, 33e, 53a, 63a ... insulating resin, 13b, 3
3a, 53b, 63b... First metal sheet, 13c, 33
b, 33c, 33d, 53c, 63c: second metal sheet, 14, 34: through hole, 15, 35: insulating substrate, 1
6,36 ... LED chip, 17a, 17b, 18a, 1
8b, 37: bump, 19: adhesive film, 23: concave portion, 24, 44: insulating separating portion, 24a: separating slit 2
5 ... resin layer, 27 ... plating layer, 30 ... conductive wire,
31: translucent resin; 160: L using nitride semiconductor
ED chip, 361: blue LED chip, 362: green LED chip, 363: red LED chip.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平11−307820（ＪＰ，Ａ) 特開 平７−235696（ＪＰ，Ａ) 特開 平11−45958（ＪＰ，Ａ) 特開 平７−326853（ＪＰ，Ａ) 特開 昭57−92881（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-11-307820 (JP, A) JP-A-7-235696 (JP, A) JP-A-11-45958 (JP, A) JP-A-7- 326853 (JP, A) JP-A-57-92881 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 33/00
Claims (12)
基板と該貫通孔を塞ぐように上記絶縁基板の一方の面に
接合された薄型平板とからなるパッケージと、上記貫通
孔内において上記薄型平板上に設けられたＬＥＤチップ
とを備えたチップ部品型発光素子であって、 上記薄型平板は絶縁分離部において互いに分離された第
１と第２の金属薄板が絶縁性樹脂で接合されてなり、か
つ上記薄型平板は上記絶縁分離部が上記貫通孔内に位置
するように上記絶縁基板と接着フィルムによって接合さ
れ、上記ＬＥＤチップの正電極及び負電極のうちの一方
の電極が上記第１の金属薄板に接続され、他方の電極が
上記第２の金属薄板に接続されていることを特徴とする
チップ部品型発光素子。A package comprising an insulating substrate having a through hole penetrating in a thickness direction and a thin flat plate joined to one surface of the insulating substrate so as to cover the through hole; A chip component type light emitting device comprising an LED chip provided on a thin flat plate, wherein the thin flat plate is formed by joining first and second thin metal plates separated from each other at an insulating separation portion by an insulating resin. And the thin flat plate is bonded to the insulating substrate by an adhesive film such that the insulating separation portion is located in the through hole, and one of the positive electrode and the negative electrode of the LED chip is connected to the first electrode. Wherein the other electrode is connected to the second metal sheet, and the other electrode is connected to the second metal sheet.
記チップ部品型発光素子の接合面の両端に位置する部分
にそれぞれ切り欠きが形成されている請求項１記載のチ
ップ部品型発光素子。2. The chip component type light emitting device according to claim 1, wherein notches are formed in the first and second metal thin plates at portions located at both ends of a bonding surface of the chip component type light emitting device. .
側の表面において、上記第１と第２の金属薄板の間から
上記第１と第２の金属薄板の表面に延在するように形成
されている請求項１又は２記載のチップ部品型発光素
子。3. The insulating resin is formed on an outer surface of the package so as to extend from between the first and second metal sheets to surfaces of the first and second metal sheets. The chip component type light emitting device according to claim 1 or 2, wherein
と第２の金属薄板の各表面にバンプを形成した請求項１
〜３のうちのいずれか１つに記載のチップ部品型発光素
子。4. The first package facing the outside of the package.
2. A bump is formed on each surface of the first and second metal sheets.
4. The chip-part-type light-emitting device according to any one of Items 1 to 3,
にそれぞれ凹部が形成され、上記バンプは、上記凹部に
形成された請求項４記載のチップ部品型発光素子。5. The chip component type light emitting device according to claim 4, wherein a concave portion is formed on an outer surface of each of the first and second thin metal plates, and the bump is formed in the concave portion.
記第１と第２の金属薄板の外側の表面を実質的に覆うよ
うに絶縁性樹脂が形成されている請求項４又は５記載の
チップ部品型発光素子。6. The insulating resin according to claim 4, wherein an insulating resin is formed so as to substantially cover outer surfaces of the first and second thin metal plates except for a portion where the bump is formed. Chip component type light emitting device.
ん青銅、銅合金及びＳｎメッキ銅箔からなる群から選択
された１種からなる請求項１〜６のうちのいずれか１項
に記載のチップ部品型発光素子。7. The method according to claim 1, wherein the first and second metal sheets are made of one selected from the group consisting of Cu, phosphor bronze, copper alloy, and Sn-plated copper foil. Item 7. A chip-part-type light-emitting device according to item 1.
れる面が粗面化されている請求項１〜７のうちのいずれ
か１項に記載のチップ部品型発光素子。8. The chip component type light emitting device according to claim 1, wherein a surface of said thin flat plate to be bonded to said insulating substrate is roughened.
の内部に複数のＬＥＤチップを備え、かつ上記第１の金
属薄板が上記各ＬＥＤチップに対応して複数の領域に絶
縁分離されてなり、上記各ＬＥＤチップの正電極はそれ
ぞれ、絶縁分離された１つの領域に接続されている請求
項１〜８のうちのいずれか１項に記載のチップ部品型発
光素子。9. The chip component type light emitting device includes a plurality of LED chips inside the through hole, and the first thin metal plate is insulated and separated into a plurality of regions corresponding to the respective LED chips. The chip component type light-emitting device according to any one of claims 1 to 8, wherein the positive electrode of each of the LED chips is connected to one region that is insulated and separated.
の一方の面から他方の面に向かって広くなるように上記
貫通孔の側面を傾斜させた請求項１〜９のうちのいずれ
か１つに記載のチップ部品型発光素子。10. The insulating substrate according to claim 1, wherein a side surface of the through hole is inclined such that the through hole of the insulating substrate is widened from one surface to the other surface of the insulating substrate. The chip component type light emitting device according to one of the above.
上記第１の金属薄板及び上記ＬＥＤチップの上記他方の
電極と上記第２の金属薄板とがそれぞれワイヤーにより
接続されている請求項１〜１０のうちのいずれか１項に
記載のチップ部品型発光素子。11. The one electrode of the LED chip and the first metal sheet, and the other electrode of the LED chip and the second metal sheet are connected by wires, respectively. The chip component type light emitting device according to any one of the above.
と負電極とを有し、上記正電極と上記負電極のうちの一
方の電極と上記第１の金属薄板及び他方の電極と上記第
２の金属薄板とをそれぞれ対向させて導電性材料により
接続されている請求項１〜１０のうちのいずれか１項に
記載のチップ部品型発光素子。12. The LED chip has a positive electrode and a negative electrode on the same surface side, one of the positive electrode and the negative electrode, the first metal thin plate, and the other electrode and the first electrode. The chip-part-type light-emitting device according to any one of claims 1 to 10, wherein the two thin metal plates are opposed to each other and connected by a conductive material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04051299A JP3217322B2 (en) | 1999-02-18 | 1999-02-18 | Chip component type light emitting device |
| JP2000175528A JP3993736B2 (en) | 1999-02-18 | 2000-06-12 | Manufacturing method of chip component type light emitting device and manufacturing method of package for chip component type light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04051299A JP3217322B2 (en) | 1999-02-18 | 1999-02-18 | Chip component type light emitting device |
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|---|---|
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| JP3217322B2 true JP3217322B2 (en) | 2001-10-09 |
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| JP2000175528A Expired - Lifetime JP3993736B2 (en) | 1999-02-18 | 2000-06-12 | Manufacturing method of chip component type light emitting device and manufacturing method of package for chip component type light emitting device |
Family Applications After (1)
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-
1999
- 1999-02-18 JP JP04051299A patent/JP3217322B2/en not_active Expired - Lifetime
-
2000
- 2000-06-12 JP JP2000175528A patent/JP3993736B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9240535B2 (en) | 2011-03-24 | 2016-01-19 | Murata Manufacturing Co., Ltd. | Light-emitting-element mount substrate and LED device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001036154A (en) | 2001-02-09 |
| JP3993736B2 (en) | 2007-10-17 |
| JP2000244022A (en) | 2000-09-08 |
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