JP2002170998A - Semiconductor light emitting device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an edge emission semiconductor light emitting device exhibiting good mountability and a high light takeout efficiency, and its manufacturing method. SOLUTION: The semiconductor light emitting device comprises an electrically insulating substrate, two electrode parts formed on the substrate, a light emitting element chip mounted on one electrode and wire bonded to other electrode through a metal wire, a transparent resin part covering the surface of the light emitting element chip and the metal wire, and a light shielding reflective resin part covering the transparent resin part. In the manufacturing process, two adjacent light emitting element chips are covered with one transparent resin part which is split into two in order to separate two light emitting element chips individually after forming the light shielding reflective resin part, and that splitting plane serves as an emission plane.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light-emitting device comprising a substrate, a light-emitting chip die-bonded and wire-bonded on the substrate, and a cured transparent resin covering the surface of the light-emitting chip, and a method of manufacturing the same. More particularly, the present invention relates to a semiconductor light emitting device used as a backlight for an indicator (for example, a liquid crystal display device) of an electric / electronic device or the like, and a method of manufacturing the same.

[0002]

2. Description of the Related Art A side emission type LED (light emitting) which is an example of a conventional side emission type semiconductor light emitting device.
The diode device is designed so that an electrode is formed on the rear surface and light is emitted only on the upper surface (front surface) side. In addition, it is formed in a slender shape so as to be easily laid down, and is packaged in taping in a laid state.

[0003] With respect to this side emission type semiconductor light emitting device,
This will be described in more detail with reference to the drawings.

FIG. 17 is a perspective view showing an example of a conventional side emission type semiconductor light emitting device.

A conventional side emission type semiconductor light emitting device comprises a substrate 101 having heat resistance, metal wirings 102a and 102b formed on both ends of the substrate 101, and one of the metal wirings 1a and 1b.
LED chip 103 which is die-bonded via conductive paste onto an LED chip 02a, and an Au wire 1 for electrically connecting the LED chip 103 and the other metal wiring 102b.
04 and a light-transmitting resin portion 105 covering the LED chip 103 and the Au wire 104. The metal wirings 102a and 102b are formed over the front surface, side surface, and back surface of the substrate 101, respectively.

In this semiconductor light emitting device, the dimensions of the thickness T of the substrate 101 and the height t of the light transmissive resin portion 105 are adjusted to the thickness of the substrate or the light transmissive resin portion of the conventional top emission type semiconductor light emitting device. By making it larger than the height dimension,
As shown in FIG. 17, the structure is such that it can be mounted on a mounting board even when it is turned over.

FIG. 18 is a perspective view showing another example of a conventional side emission type semiconductor light emitting device.

This side emission type semiconductor light emitting device has a rectangular parallelepiped resin molded body 111 having a concave portion formed on the upper surface, metal wirings 112a and 112b provided on the surface of the concave portion, and a conductive material formed on one of the metal wirings 112a. An LED chip 113 die-bonded via a paste and this LED
An Au wire 114 for electrically connecting the chip 113 and the other metal wiring 112b, and a light-transmitting resin portion 115 formed by injecting a resin into the recess with a dispenser or the like and curing the resin to cover the LED chip 113 surface. It is configured. Further, two corners of the four corners of the rectangular parallelepiped resin molded body 111 are cut off, and through-holes 116a and 116b formed integrally with the metal wirings 112a and 112b are formed in the cut off parts. Since each of them is provided, as shown in FIG. 18, the structure is such that it can be mounted on the mounting board even when it is turned over.

[0009]

However, in the conventional semiconductor light emitting device, the surface mounting (S
Since the (MD) type semiconductor light emitting device is mounted horizontally on the mounting substrate, the electrodes cannot be formed on the back surface (the surface in contact with the mounting substrate) as shown in FIGS. For this reason, when the semiconductor light emitting device is mounted on the mounting substrate, there have been problems such as misalignment with respect to the mounting substrate and poor connection.

Further, in a conventional semiconductor light emitting device, a surface mount (SMD) type semiconductor light emitting device which emits light on the top surface is mounted on a mounting substrate in a horizontal direction. Therefore, as shown in FIG. , The upper surface) (light leakage occurs). Therefore, there is a problem that the light extraction efficiency is low for use as a side emission type semiconductor light emitting device.

In the conventional method for manufacturing a semiconductor light emitting device, transfer molding is performed to mold an LED chip as a light emitting portion. At this time, in order to improve the releasability from a mold, a resin is used. A thin release agent film is formed on the surface of the substrate. For this reason, there has been a problem that the release agent film becomes an obstacle when an outer case having a reflective or light-shielding property is attached later.

Furthermore, in the conventional method for manufacturing a semiconductor light emitting device, when a reflective material is pasted by using an adhesive instead of attaching an outer case, the completion is caused by the inclusion of bubbles and unevenness of the adhesive. There is a problem that the thickness dimension of the resulting product varies.

The present invention has been made in order to solve such a problem, and an object of the present invention is to provide a side emission type semiconductor light emitting device having good mountability and high light extraction efficiency, and a method of manufacturing the same. I have.

[0014]

A semiconductor light emitting device according to the present invention comprises an electrically insulating substrate, two electrode portions formed on the substrate, and one mounted on one electrode portion. A light-emitting element chip wire-bonded to the electrode portion of the light-emitting element via a metal wire, a transparent resin portion covering the light-emitting element chip and the metal wire surface, and a light-shielding and reflective resin portion covering the transparent resin portion. And one side of the transparent resin portion is formed on a light emitting surface exposed to the outside.

According to the present invention, a semiconductor light emitting device that emits light only to one side can be obtained.

Further, the substrate and the electrode portion are provided with a metal layer on a lower surface of the substrate, and a through hole is formed at a predetermined position with an adhesive sheet provided on the upper surface of the substrate. May have a structure in which a metal foil constituting an electrode portion is adhered to and a through hole is closed.

In this case, it is possible to prevent the resin from leaking to the back surface of the substrate.

Further, a portion of the transparent resin portion facing the light emitting surface may be formed as a second light emitting surface exposed from the resin portion.

In this case, a semiconductor light emitting device that emits light from both sides can be obtained.

Further, two or three types of light emitting element chips having different emission colors may be mounted on a substrate.

In this case, it is possible to obtain a semiconductor light emitting device capable of emitting light of multiple colors.

Further, a plurality of electrode portions are provided on the substrate,
A first light emitting element chip is mounted on the electrode part, a second light emitting element chip is mounted on the second electrode part, and the first light emitting element chip is wire-bonded to the third electrode part using a metal wire, A step of wire bonding the light emitting element chip to the fourth electrode portion using a metal wire, and applying or injecting and curing a liquid transparent resin to at least cover the adjacent first light emitting element chip and second light emitting element chip A step of forming one transparent resin part and a step of forming a light-shielding and reflective resin part covering the light-transmitting resin part surface by applying or injecting and curing a resin having light-shielding and reflective properties And in order to separate the adjacent first light emitting element chip and second light emitting element chip individually,
And a step of dividing the transparent resin portion into two.

According to the present invention, only the divided surface can be used as the light emitting surface.

Further, a screen printing method may be used as a method for forming the transparent resin portion.

In this case, the transparent resin portion can be easily formed.

Further, a potting method may be used as a method for forming the transparent resin portion.

In this case, the release agent does not remain on the surface of the cured transparent resin portion, and stable adhesiveness between the internal resin portion and the external resin portion can be secured.

Further, a screen printing method may be used as a method for forming the resin portion having the light-shielding property and the reflective property.

In this case, it is possible to easily form a resin part having a light-shielding property and a reflective property.

Further, a transfer molding method may be used as a method for forming the resin portion having the light-shielding property and the reflective property.

In this case, it is possible to easily form a resin portion having a light-shielding property and a reflective property.

The shape of the opening of the metal mask used in the screen printing method may be based on an elliptical shape, and the curved portions at both ends of the elliptical shape may be cut.

In this case, the displacement of the LED chip mounting position and the displacement of the substrate pattern can be prevented.

[0034]

Next, an embodiment of a semiconductor light emitting device and a method of manufacturing the same according to the present invention will be described with reference to the drawings.

First, an embodiment of a method for manufacturing a semiconductor light emitting device will be described.

FIG. 1 is a plan view showing one embodiment of a method for manufacturing a semiconductor light emitting device according to the present invention, and FIG. 2 is a sectional view showing one embodiment of a method for manufacturing a semiconductor light emitting device according to the present invention. It is. 2A is a partially enlarged view showing a cross section taken along line AA in FIG. 1A, and FIG. 2B is a partially enlarged view showing a cross section taken along line BB in FIG. 1B. FIG. 2 (c) is a partially enlarged view showing a cross section taken along line CC of FIG. 1 (c).
(D) is a partially enlarged view showing a cross section taken along line DD of FIG. 1 (d).

First, as shown in FIGS. 1A and 2A, metal wirings 2a and 2b are provided on a substrate 1, and one of the electrode parts 2a1 and 2a2 of the metal wiring 2a is provided. A first LED chip 3a as a light emitting element chip is mounted on 2a1 and at the same time, an electrode portion 2b of the metal wiring 2b is mounted.
A second LED on one of the electrode portions 2b1 of the first and second electrodes 2b2
The chip 3b is mounted. Then, the first LED chip 3a
Is wire-bonded to the other electrode portion 2b2 using the Au wire 4a, and at the same time, the second LED chip 3b is connected to the Au wire 4a.
b is used to perform wire bonding to the other electrode portion 2a2 to provide electrical connection between the first LED chip 3a and the other electrode portion 2b2 and between the second LED chip 3b and the other electrode portion 2a2.

Subsequently, as shown in FIGS. 1 (b) and 2 (b), the first LED chip 3a, the second LE
A light-transmitting resin portion 5 covering the surfaces of the D chip 3b and the Au wires 4a, 4b is formed. A screen printing method is an example of a resin coating method used at this time, and a potting method is an example of a resin injection method.

Further, after the light-transmitting resin is cured, as shown in FIGS. 1C and 2C, a white epoxy resin having a light-shielding property and a reflective property is applied or injected and cured. Thereby, a white epoxy resin portion 6 covering the surface of the light transmitting resin portion 5 is formed. An example of a resin coating method used at this time is a transfer molding method.

Finally, as shown in FIGS. 1D and 2D, each LED chip is individually cut using a dicing device. Specifically, the substrate 1 is cut at a cutting position L1 at which the width becomes a fixed dimension, and further, a cutting position L2 which is a symmetrical line between the first LED chip 3a and the second LED chip 3b, and one light-transmitting resin. The substrate 1 is cut at a cutting position L3, which is a line of symmetry between the portion 5 and another light-transmitting resin portion 5 adjacent to the one light-transmitting resin portion 5, thereby completing a semiconductor light emitting device. The surface formed by cutting at the cutting position L2 is defined as a light emitting surface of the semiconductor light emitting device.

FIG. 3 shows an embodiment of the semiconductor light emitting device formed by such a procedure.

FIG. 3 is a perspective view showing one embodiment of the semiconductor light emitting device of the present invention.

This semiconductor light emitting device has an electrically insulating substrate 11, two electrode portions 12a and 12b formed on the substrate 11, and one electrode portion 12a mounted on another electrode portion. The LED chip 13 wire-bonded to the portion 12b via the Au wire 14, and the light-transmitting resin portion 5 covering the surface of the LED chip 13 and the Au wire 14
And a white epoxy resin portion 16 that covers the light transmitting resin portion 5. In FIG. 3, the electrode portions 12a and 12b, the LED chip 13 and the Au wire 1
In order to more clearly show 4, the transparent resin portion 5 is shown as transparent.

Next, a screen printing method which is an example of a method of sealing an LED chip or the like with a resin will be described with reference to the drawings.

FIG. 4 is a sectional view showing an example of a step of applying a light transmitting resin by a screen printing method. FIG. 4A is an enlarged cross-sectional view showing a cross section taken along line EE of FIG. 1A.

First, in the screen printing method, FIG.
As shown in (a), the electrode portions 2a1 and 2a2
After the formation of b1, the mounting of the first LED chip 3a and the second LED chip 3b, and the wire bonding using the Au wires 4a, 4b, the sealing size was adjusted as shown in FIG. 4B. A metal mask 21 having an opening 21 a is arranged at a predetermined position on the substrate 1.
Further, a light transmissive resin 22 is placed on an end portion (right end portion in FIG. 4B) on the metal mask 21. The opening 21a is formed in a size and a position such that the first LED chip 3a and the second LED chip 3b can be individually exposed in pairs.

Subsequently, as shown in FIG. 4C, while the metal mask 21 is pressed against the substrate 1, the light-transmitting resin 22 is moved in one direction (the direction indicated by the arrow d1) by the squeegee 23. Then, the light transmissive resin 22 is packed in the opening 21a. At the surface (lower surface) of the metal mask 21 used at this time in contact with the substrate 1 or the like, a concave portion 21b is provided so as to reduce the contact area with the substrate 1 or the like. A gap is less likely to be formed between the metal mask 21 and the member on the substrate 1 side, and it is possible to prevent the light transmissive resin 22 from bleeding on the rear surface (lower surface) of the metal mask 21.

Such a printing method is generally known as PES
(Printing Encapsulation S
systems) system. In this manner, by adopting the method with less bleeding, as shown in FIG. 4D, when the metal mask 21 is removed, the light transmitting resin 22 becomes dome-shaped due to the surface tension of the light transmitting resin 22. Shape can be maintained. The resin used herein preferably has a structural viscosity ratio of about 3.6 in order to form a stable dome shape.

Next, a potting method which is another example of a method of sealing an LED chip or the like with a resin will be described with reference to the drawings.

FIG. 5 is a sectional view showing an example of a step of injecting a light-transmitting resin by a potting method. FIG.
FIG. 2A is an enlarged cross-sectional view showing a cross section taken along line EE of FIG.

First, in the potting method, FIG.
As shown in the figure, the formation of the electrode portions 2a1 and 2b1 on the surface of the substrate 1, the first LED chip 3a and the second LED chip 3
5b, and after the wire bonding using the Au wires 4a and 4b is completed, as shown in FIG. 5B, the light transmissive resin previously sealed in the dispenser 31 is removed by air pressure. First from the tip of the dispenser 31
It discharges to LED chip 3a and 2nd LED chip 3b. Then, as shown in FIG. 5C, the pair of first LEs
D chip 3a, second LED chip 3b, and A
Covers the surfaces of the u lines 4a and 4b. At this time, the discharged light transmissive resin 32 maintains a dome shape due to surface tension.

Next, a method of applying a white epoxy resin having high light-shielding properties and high reflectivity on the light-transmitting resin portion will be described with reference to the drawings.

FIG. 6 is a sectional view showing an example of a step of applying a white epoxy resin by a screen printing method. FIG. 6A is an enlarged sectional view showing a section taken along line FF of FIG. 1B.

The procedure for applying the white epoxy resin is the same as the procedure for applying the light transmitting resin.
The only difference is the shape of the metal mask used.

First, in this screen printing method, FIG.
As shown in (a), the electrode portions 2a1 and 2a2
FIG. 6B shows a state in which the formation of b1, the mounting of the first LED chip 3a and the second LED chip 3b, the wire bonding using the Au wires 4a and 4b, and the formation of the light-transmitting resin portion 5 are completed. As described above, the metal mask 41 having the opening 41a corresponding to the sealing size is arranged at a predetermined position on the substrate 1. Furthermore, this metal mask 4
A white epoxy resin 42 is placed on the upper end (the right end in FIG. 6B). The opening 41a is formed in a size and a position so that the plurality of light-transmitting resin portions 5 can be exposed.

Subsequently, as shown in FIG. 6 (c), with the metal mask 41 pressed against the substrate 1, the white epoxy resin 42 is moved in one direction with a squeegee 43 (arrow d2 in FIG. 6 (b)). (In the direction indicated by), and the white epoxy resin 42 is packed into the openings of the metal mask. Finally,
When the metal mask is removed, the white epoxy resin 42 maintains a dome shape due to the surface tension of the white epoxy resin 42.

Next, an example of the structure of the substrate constituting the semiconductor light emitting device of the present invention will be described with reference to the drawings.

FIG. 7 is a cross-sectional view showing an example of the structure of the substrate and the electrode part constituting the semiconductor light emitting device of the present invention.

A copper layer 52 is provided on the lower surface of a glass epoxy (glass fiber reinforced epoxy resin) substrate 51 as a substrate, while an epoxy adhesive sheet 53 is provided on the upper surface of the glass epoxy substrate 51. . In this state, a drilling process is performed to provide through holes 50 in the glass epoxy base material 51 and the epoxy adhesive sheet 53, and then the copper foil 54 constituting the metal part is coated with the epoxy adhesive sheet 53 using the epoxy adhesive sheet 53. 51 to cover the through hole 50. With such a structure, when the light transmitting resin is applied or injected later, the light transmitting resin can be prevented from leaking to the back surface of the substrate.

The height of the resin portion after removing the metal mask can be changed according to the thickness of the metal mask used when applying the light transmitting resin or the white epoxy resin by the screen printing method.

FIG. 8 is a graph showing an example of the thickness of the resin portion after application with respect to the thickness of the metal mask. FIG. 8A shows the resin portion when the thickness of the metal mask is 1.0 mm. FIG. 2B shows the thickness of the resin portion when the thickness of the metal mask is 0.8 mm, and FIG. 2C shows the thickness of the metal mask when the thickness of the metal mask is 0.8 mm. The thickness of the resin portion at 0.6 mm is shown. This graph is created by taking 20 pieces of data for each thickness of the metal mask, the vertical axis shows the thickness of the resin portion, and the horizontal axis shows the number of data.

As shown, when the thickness of the metal mask is 1.0 mm, the average value of the thickness of the resin portion is 0.6.
mm, the average value of the thickness of the resin portion when the thickness of the metal mask is 0.8 mm is 0.71 mm, and the average value of the thickness of the resin portion when the thickness of the metal mask is 0.6 mm. The value is 0.67 mm. For example, when manufacturing a semiconductor light emitting device having a thickness of 1.2 mm when completed,
Preferably, the thickness of the resin part is about 0.7 mm,
Therefore, it can be seen from the graph that a metal mask having a thickness of 0.8 mm should be used.

Further, when the PES method is adopted, the shape of the opening 61a of the metal mask 61 is based on an ellipse as shown in FIG. 9, and furthermore, both ends 61a1 and 61a2 of the ellipse are formed. It is preferable that the curved portion is cut to prevent the LED chip mounting position shift and the substrate pattern shift. FIG. 9 is an explanatory view showing an example of a metal mask used in the method for manufacturing a semiconductor light emitting device of the present invention. FIG. 9A is a plan view showing the metal mask, and FIG. It is the elements on larger scale which show an opening part.

Next, another embodiment of the semiconductor light emitting device of the present invention will be described.

FIG. 10 is a perspective view showing another embodiment of the semiconductor light emitting device of the present invention, and FIG. 11 is a state before the LED chips are individually cut off according to the method of manufacturing the semiconductor light emitting device of the present invention. FIG. FIG.
0, the electrode portions 12a and 12b and the LED chip 1
In order to more clearly show 3 and the Au wire 14, the light-transmitting resin portion 5 is shown as being transparent.

The difference between this semiconductor light emitting device and the semiconductor light emitting device of the above embodiment is that the shape of the light transmitting resin portion 5 before cutting when viewed from above is a track shape. It is.

As shown in FIG. 11, by making the shape of the light-transmitting resin portion 5 into a track shape, the light-transmitting resin portion 5 is formed by cutting at the cutting position L4 which is a symmetrical line between the first LED chip 3a and the second LED chip 3b. The completed semiconductor light emitting device has a cut surface (the surface indicated by S1 in FIG. 10) and a surface formed by cutting at the cutting position L5 parallel to the cutting position L4 (the surface indicated by S2 in FIG. 10). And a light emitting surface. Note that the semiconductor light emitting device manufactured by such a procedure also does not have a light emitting surface on the upper surface, as in the semiconductor light emitting device of the above-described embodiment.

Next, still another embodiment of the semiconductor light emitting device of the present invention will be described with reference to the drawings.

FIG. 12 is a perspective view showing still another embodiment of the semiconductor light emitting device of the present invention.

In this semiconductor light emitting device, one semiconductor light emitting device is composed of two types of LED chips 73a and 73 having different emission colors.
b.

Of the two LED chips 73a and 73b, one LED chip 73a is die-bonded on the electrode 72a1 and the Au wire 7 is connected to the electrode 72b2.
4a. On the other hand, the other LED chip 73b is die-bonded on the electrode portion 72b1, and wire-bonded to the electrode portion 72a2 using the Au wire 74b. In FIG. 11, the electrode portions 72a1, 72a2, 72b1, 72b
2, LED chips 73a, 73b and Au wire 74a,
In order to more clearly show 74b, the light-transmitting resin portion 5 is illustrated as being transparent.

FIG. 13 is a perspective view showing still another embodiment of the semiconductor light emitting device of the present invention.

In this semiconductor light emitting device, one semiconductor light emitting device is divided into three types of LED chips 83a and 83 having different emission colors.
b, 83c.

The three LED chips 83a, 83b, 83
c is die-bonded on one electrode portion 82a, and the electrode portion 8 is formed using Au wires 84a, 84b and 84c.
2b1, 82b2 and 82b3 are wire-bonded respectively. In this case, the anode or the cathode is used as a common.

In the method for manufacturing a semiconductor light emitting device of the present invention, a white epoxy resin portion having high light-shielding properties and high reflectivity may be formed by a transfer molding method.

A process for forming a white epoxy resin portion by the transfer molding method will be described.

FIG. 14 is a partial plan view showing an example of a state in which a white epoxy resin portion is formed by a transfer molding method according to the method for manufacturing a semiconductor light emitting device of the present invention. FIGS. It is sectional explanatory drawing which shows an example of the process of forming a white epoxy-type resin part by a molding method. Note that FIG.
FIG. 16C shows a cross section taken along line GG of FIG.
(C) shows a cross section taken along line HH in FIG.

First, as shown in FIGS. 15A and 16A, an electrode portion 92 is provided on a substrate 91, and an LED chip 93 is mounted on a predetermined position of the electrode portion 92. FIG. 15 (b) and FIG. 1 show a state in which wire bonding is performed using the electrodes 94, and the electrode section 92, the LED chip 93, and the gold wire 94 are sealed with the transparent resin section 95.
As shown in FIG. 6B, the substrate 91 is sandwiched from above and below by a transfer mold die 96 composed of a lower plate 96a and an upper plate 96b.

This transfer mold 96 is
Flat lower mold 96a and upper mold 96b having a recess on the lower surface
It is composed of The recess provided in the upper mold 96b is formed in accordance with the shape of the white epoxy resin portion, and as shown in FIG. 14, for example, a ridge-shaped white epoxy resin portion 90 long in the row direction is formed. In this case, it is formed in a ridge shape long in the row direction.

Subsequently, the transfer mold 96
While heating itself, a semi-cured white epoxy resin is poured at a high pressure from the resin injection port 96c shown in FIG. 15B.

When the white epoxy resin is completely cured and the transfer mold 96 is removed, the area around the transparent resin portion 95 is shielded from light, as shown in FIGS. It can be covered with a white epoxy resin part 90 having high properties and high reflectivity.

[0082]

According to the semiconductor light emitting device of the present invention, an electrically insulating substrate, two electrode portions formed on the substrate, and mounted on one electrode portion and mounted on another electrode portion are provided. A light-emitting element chip wire-bonded via a metal wire, a transparent resin part covering the light-emitting element chip and the metal wire surface, and a light-shielding and reflective resin part covering the transparent resin part. According to the present invention, since one side of the transparent resin portion is formed on the light emitting surface exposed to the outside, the light emitting surface can be formed only on one side, thereby reducing light leakage. can do. As a result, the light extraction efficiency at the light emitting surface can be further increased.

Further, the substrate and the electrode portion are provided with a metal layer on a lower surface of the substrate, and a through hole is formed at a predetermined position with an adhesive sheet provided on the upper surface of the substrate. May have a structure in which the metal foil constituting the electrode portion is attached and the through-hole is closed, and in this case, it is possible to prevent resin leakage to the back surface of the substrate. it can.

Further, the portion of the transparent resin portion facing the light emitting surface may be formed as a second light emitting surface exposed from the resin portion. In this case,
A semiconductor light emitting device that emits light on both sides can be obtained.

Further, two or three kinds of light emitting element chips having different emission colors may be covered on the substrate. In this case, a semiconductor light emitting device capable of emitting multicolor light is obtained. And can be used for a wider range of applications.

Further, a plurality of electrode portions are provided on the substrate,
A first light emitting element chip is mounted on the electrode part, a second light emitting element chip is mounted on the second electrode part, and the first light emitting element chip is wire-bonded to the third electrode part using a metal wire, A step of wire bonding the light emitting element chip to the fourth electrode portion using a metal wire, and applying or injecting and curing a liquid transparent resin to at least cover the adjacent first light emitting element chip and second light emitting element chip A step of forming one transparent resin part and a step of forming a light-shielding and reflective resin part covering the light-transmitting resin part surface by applying or injecting and curing a resin having light-shielding and reflective properties And in order to separate the adjacent first light emitting element chip and second light emitting element chip individually,
According to the present invention, only the divided surface can be used as the light emitting surface, so that light leakage can be reduced. As a result, the light extraction efficiency at the light emitting surface can be further increased.

A screen printing method may be used as a method of forming the transparent resin portion. In this case, the transparent resin portion can be easily formed, and as a result, the manufacturing cost can be reduced. be able to.

As a method of forming the transparent resin portion, a potting method may be used. In this case, the release agent does not remain on the surface of the cured transparent resin portion, and the inner resin portion and the outer resin portion are not removed. And stable adhesiveness can be ensured.

A screen printing method may be used as a method of forming the resin part having the light-shielding property and the reflective property. In this case, the resin part having the light-shielding property and the reflective property is easily formed. And as a result,
Manufacturing costs can be reduced.

Further, a transfer molding method may be used as a method of forming the resin part having the light-shielding property and the reflective property. In this case, the resin part having the light-shielding property and the reflective property is easily formed. As a result, manufacturing costs can be reduced.

Further, the shape of the opening of the metal mask used in the screen printing method may be an ellipse-shaped base, and furthermore, a curved portion at both ends of the ellipse may be cut. Can prevent the displacement of the LED chip mounting position and the displacement of the substrate pattern, and as a result, the yield can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing one embodiment of a method for manufacturing a semiconductor light emitting device of the present invention.

FIG. 2 is a sectional view showing one embodiment of a method for manufacturing a semiconductor light emitting device of the present invention.

FIG. 3 is a perspective view showing one embodiment of the semiconductor light emitting device of the present invention.

FIG. 4 is a cross-sectional view illustrating an example of a step of applying a light transmitting resin by a screen printing method.

FIG. 5 is a cross-sectional view showing an example of a step of injecting a light-transmitting resin by a potting method.

FIG. 6 is a sectional view showing an example of a step of applying a white epoxy resin by a screen printing method.

FIG. 7 is a cross-sectional view illustrating an example of a structure of a substrate and an electrode unit constituting the semiconductor light emitting device of the present invention.

FIG. 8 is a graph showing an example of a thickness of a resin portion after application with respect to a thickness of a metal mask.

FIG. 9 is an explanatory diagram illustrating an example of a metal mask used in the method for manufacturing a semiconductor light emitting device of the present invention.

FIG. 10 is a perspective view showing another embodiment of the semiconductor light emitting device of the present invention.

FIG. 11 is a plan view showing a state before individual LED chips are separated according to the method for manufacturing a semiconductor light emitting device of the present invention.

FIG. 12 is a perspective view showing still another embodiment of the semiconductor light emitting device of the present invention.

FIG. 13 is a perspective view showing still another embodiment of the semiconductor light emitting device of the present invention.

FIG. 14 is a partial plan view showing an example of a state in which a white epoxy resin portion is formed by a transfer molding method according to the method for manufacturing a semiconductor light emitting device of the present invention.

FIG. 15 is an explanatory sectional view showing an example of a step of forming a white epoxy resin portion by a transfer molding method.

FIG. 16 is an explanatory sectional view showing an example of a step of forming a white epoxy resin portion by a transfer molding method.

FIG. 17 is a perspective view showing an example of a conventional side emission type semiconductor light emitting device.

FIG. 18 is a perspective view showing another example of the conventional side emission type semiconductor light emitting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2a, 2b Metal wiring 3a 1st LED chip 3b 2nd LED chip 4a, 4b Au wire 5 Light transmissive resin part 6 White epoxy resin part

Continued on front page F-term (reference) 4M109 AA02 BA01 CA04 CA10 CA21 EC11 EC12 GA01 5F041 AA37 AA41 CA76 CA77 DA07 DA12 DA13 DA20 DA44 DA58 DA81 DA92 DB09 FF11 5F061 AA02 CA04 CA10 CA21 CB13 FA01

Claims (10)

[Claims] 1. An electrically insulating substrate, two electrode portions formed on the substrate, and mounted on one electrode portion and wire-bonded to another electrode portion via a metal wire. A light-emitting element chip, a transparent resin portion covering the light-emitting element chip and the metal wire surface, and a light-shielding and reflective resin portion covering the transparent resin portion. A semiconductor light emitting device, wherein a portion is formed on a light emitting surface exposed to the outside. 2. The substrate and the electrode portion, wherein a metal layer is provided on a lower surface of the substrate, and a through hole is formed at a predetermined position in a state where an adhesive sheet is provided on an upper surface of the substrate.
2. The semiconductor light emitting device according to claim 1, further comprising a structure in which a metal foil constituting an electrode portion is attached to the adhesive sheet and the through hole is closed. 3. The semiconductor light emitting device according to claim 1, wherein a portion of said transparent resin portion facing said light emitting surface is formed as a second light emitting surface exposed from said resin portion. 4. The semiconductor light emitting device according to claim 1, wherein two or three types of light emitting element chips having different emission colors are mounted on the substrate. 5. A first light emitting device chip comprising: a plurality of electrode portions provided on a substrate; a first light emitting device chip mounted on a first electrode portion; a second light emitting device chip mounted on a second electrode portion; By wire bonding to the third electrode portion using a metal wire, and wire bonding the second light emitting element chip to the fourth electrode portion using a metal wire, and by applying or injecting and curing a liquid transparent resin. Forming at least one transparent resin portion that covers at least the adjacent first light emitting element chip and second light emitting element chip; A step of forming a resin part having a light-shielding property and a reflective property covering the surface of the part, and dividing the transparent resin part into two in order to separate the adjacent first and second light-emitting element chips individually. And a method for manufacturing a semiconductor light emitting device. 6. The method according to claim 5, wherein a screen printing method is used as a method for forming the transparent resin portion. 7. The method according to claim 5, wherein a potting method is used as a method for forming the transparent resin portion. 8. The method for manufacturing a semiconductor light emitting device according to claim 5, wherein a screen printing method is used as a method for forming the resin portion having a light shielding property and a reflective property. 9. The method for manufacturing a semiconductor light emitting device according to claim 5, wherein a transfer molding method is used as a method for forming the resin portion having a light-shielding property and a reflective property. 10. The semiconductor light emitting device according to claim 6, wherein the shape of the opening of the metal mask used in the screen printing method is based on an elliptical shape, and the curved portions at both ends of the elliptical shape are cut. Device manufacturing method.