JP2013143430A - Semiconductor light-emitting device, and illuminating device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an LED device which allows easy chromaticity management at whitening and which can be easily manufactured even when a reflection layer is provided on an upper surface, and to provide an illuminating device using the LED device.SOLUTION: In an LED device 10 having an upper surface reflection member 11 on an upper surface, an LED die 20 mounted on a circuit board 14 is coated by a transparent resin 13, and a lateral face fluorescent member 12 is provided on four or two lateral faces. In a state of an aggregate substrate from which the circuit boards 14 can be obtained by individualization, the lateral face fluorescent member 12 is formed by filling in a groove carved on the transparent resin 13. A width of the groove is adjusted to adjust a luminous color of the LED device 10.

Description

  The present invention relates to a semiconductor light-emitting device in which a semiconductor light-emitting element is covered with a translucent member and a reflective member is provided on the semiconductor light-emitting element, and an illumination device using the semiconductor light-emitting device.

  A semiconductor light emitting device cut from a wafer (hereinafter referred to as an LED die unless otherwise specified) is mounted on a circuit board and covered with a light-transmitting member such as resin or glass and packaged (hereinafter not particularly specified). As long as it is called an LED device). When this LED device is arranged on a mother board to form a flat illumination device, the LED device has a strong directivity toward the front of the illumination device, so it is intended to spread the emitted light of the LED device using a lens. Sometimes. However, when the LED device and the lens are stacked, the lighting device becomes thick.

  On the other hand, an LED device that emits light only to the side of the lighting device is mounted on a mother board, and an optical member such as a reflector or a light guide plate is disposed adjacent to the LED device to make the lighting device thinner. There is. In this lighting device, a light beam directed to the front of the lighting device in the LED device is directed to the side of the lighting device by a reflecting member arranged at the top of the LED device, and light emitted from the side of the LED device is emitted. The optical member is directed to the front of the lighting device. In this way, a uniform light-emitting surface can be secured over a wide area, and a reduction in thickness can be achieved because the optical member and the LED device are not laminated. In addition, the cost of components can be reduced by not using a lens.

  An LED device used in this lighting device is shown in FIG. FIG. 1 of Patent Document 1 is transferred to FIG. In addition, the number which shows a member is changed partially. FIG. 11 is a cross-sectional view of a light emitting diode 10a (LED device) shown as a conventional example. In FIG. 11, a light emitting diode 10a has an LED chip 2 (LED die) fixed on an insulating substrate 1 (circuit board), and the LED chip 2 is sealed with a translucent resin layer 3 (translucent member). Yes. Further, a light shielding layer 7 (reflection member) is provided on the upper part of the translucent resin layer 3. The light shielding layer 7 is required to have a high reflectance as described in paragraph 0046 of Patent Document 1.

  The insulating substrate 1 has electrode patterns 4a and 4b made of a lead frame 4, and a front surface 1a, a back surface 1c, and an end 1b are shown in the drawing. The LED chip 2 is die-bonded to the electrode pattern electrode 4a, is connected to the electrode pattern 4b by a wire 5 extending from the electrode portion 6, and emits light from the light emitting surface 2a. A part of this light is reflected by the light shielding layer 7 on the upper surface 3a of the translucent resin layer 3, and is emitted from the side of the light emitting diode 10a to the outside.

Japanese Patent Laid-Open No. 2001-257381 (FIG. 1, paragraph 0046)

In the LED device (light emitting diode 10a) shown in FIG. 11, the light emitted from the LED die (LED chip 2) is emitted as it is from the side face, so that no white light can be obtained. In order to obtain white light, the LED die may be made to emit blue or near-ultraviolet light as in many LED devices, and the LED die may be covered with a translucent member containing a phosphor. In the case of the LED device (light emitting diode 10a) shown in FIG. 11, the phosphor is contained in the translucent member (translucent resin 3) covering the LED die (LED chip 2). The chromaticity of light emission of the LED device is strongly influenced by the light emission wavelength of the LED and the amount of phosphor. That is, every time the emission wavelength of the LED die fluctuates, the phosphor concentration of the translucent resin must be adjusted again. As described above, in the LED device including the reflecting member on the upper part, the technique of causing the light-transmitting resin to contain a phosphor and causing white light emission is difficult to manufacture and difficult to manufacture.

  Therefore, in order to solve this problem, the present invention provides an LED device that includes a reflective member on the upper portion and emits light from the side surface, and an LED device that is easy to make chromaticity management for whitening and illumination using the LED device An object is to provide an apparatus.

In order to solve the above problems, a semiconductor light-emitting device of the present invention is a semiconductor light-emitting device including an upper surface reflecting member on an upper part of a semiconductor light-emitting element.
The semiconductor light emitting device is coated with a transparent resin,
It is equipped with a side fluorescent member on four sides,
Alternatively, a side fluorescent member is provided on two opposing side surfaces, and a side reflecting member is provided on the other two opposing side surfaces.

  In the semiconductor light emitting device of the present invention, the light beam emitted from the semiconductor light emitting element passes through the transparent resin and reaches the side fluorescent member formed on the side surface while partially reflecting. When the light emission of the semiconductor light emitting device is blue, a part of the light beam reaching the side fluorescent member is transmitted as it is, and the rest is wavelength-converted by the side fluorescent member, and the combined color thereof is white. When the light emission of the semiconductor light emitting element is ultraviolet light, the light beam that has reached the side fluorescent member is converted in wavelength by the phosphor and becomes white. In the semiconductor light emitting device of the present invention, when the emission wavelength of the semiconductor light emitting element varies, it can be easily adjusted to fall within a desired chromaticity range by adjusting the thickness of the side fluorescent member. Since the side fluorescent member may be formed by digging a groove in a transparent resin and filling the fluorescent resin containing the phosphor, the adjustment of the thickness corresponds to changing the width of the groove and can be easily manufactured.

  The upper surface reflecting member may cover an upper portion of the side fluorescent member.

  The side fluorescent member may cover a side portion of the upper surface reflecting member.

  The upper surface reflecting member and the side surface reflecting member may be integrally formed.

  You may provide the bottom face reflection member in the bottom part.

  In order to solve the above-described problems, an illuminating device including a semiconductor light emitting device according to the present invention includes an upper surface reflecting member on an upper part of a transparent resin covering the semiconductor light emitting element, and includes side fluorescent members on four side surfaces or two opposite side surfaces. An optical member for directing light emitted from the side surface upward of the semiconductor light emitting device is provided adjacent to the provided semiconductor light emitting device.

  Since the semiconductor light-emitting device serving as the light source of the illumination device of the present invention includes the upper surface reflecting member on the transparent resin covering the semiconductor light-emitting element, strong radiated light appears in the side surface direction. In the illumination device of the present invention, the emitted light is directed upward while being spread laterally by the optical member adjacent to the side portion of the semiconductor light emitting device. At this time, since the semiconductor light emitting device includes the side fluorescent member on four or two opposite side surfaces, the desired chromaticity can be obtained by adjusting the thickness of the side fluorescent member even if the emission wavelength of the semiconductor light emitting element varies. Can be in range. The thickness of the side fluorescent member can be adjusted only by changing the width of the groove formed in the transparent resin. That is, since the illumination device of the present invention uses this semiconductor light emitting device, the chromaticity management is easy and the manufacture becomes easy.

  The optical member may be a reflector or a light guide plate.

  The semiconductor light emitting device has two opposing side surfaces that do not emit light, and the plurality of semiconductor light emitting devices are arranged so that the side surfaces that do not emit light are adjacent to each other, and the optical member is disposed on the side surface that emits light You may do it.

  As described above, the semiconductor light emitting device of the present invention and the lighting device including the semiconductor light emitting device have four or two opposite side surfaces when the upper surface reflecting member is provided on the transparent resin covering the semiconductor light emitting element. Since the side firefly member is provided, chromaticity management is easy and manufacturing becomes easy.

The external view of the LED device in 1st Embodiment of this invention. Sectional drawing of the LED apparatus shown in FIG. Explanatory drawing of the illuminating device using the LED apparatus shown in FIG. The external view of the LED device in 2nd Embodiment of this invention. Sectional drawing of the LED apparatus shown in FIG. Explanatory drawing of the illuminating device using the LED device shown in FIG. The external view of the LED apparatus in 3rd Embodiment of this invention. Sectional drawing of the LED apparatus shown in FIG. Explanatory drawing of the illuminating device using the LED apparatus shown in FIG. Sectional drawing of the LED apparatus in 4th Embodiment of this invention. Sectional drawing of the conventional LED device.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the description of the drawings, the same or equivalent elements will be denoted by the same reference numerals, and redundant description will be omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.
(First embodiment)

  A first embodiment of the present invention will be described with reference to FIGS. The outer shape of the LED device 10 (semiconductor light emitting device) in the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is an outline view of the LED device 10, (a) is a plan view, (b) is a front view, and (c) is a bottom view. When the LED device 10 is viewed from the top, a rectangular frame-shaped side fluorescent member 12 and an inner upper surface reflecting member 11 can be seen (a). When the LED device 10 is viewed from the front, the side fluorescent member 12, the circuit board 14 under the side fluorescent member 12, and the external connection electrodes 15 and 16 under the circuit board 14 can be seen (b). When the LED device 10 is viewed from the bottom side, the circuit board 14 and the external connection electrodes 15 and 16 inside the area occupied by the circuit board 14 can be seen (c).

  The internal structure of the LED device 10 will be described with reference to FIG. FIG. 2 is a cross-sectional view of the LED device 10 drawn along the line AA in FIG. The LED die 20 is flip-chip mounted on the circuit board 14, the LED die 20 is covered with the transparent resin 13, and the upper surface reflecting member 11 is laminated on the transparent resin 13. Side fluorescent members 12 are provided on the sides of the transparent resin 13 and the upper surface reflecting member 11. The bottom of the side fluorescent member 12 is fitted into the recess of the circuit board 14.

The LED die 20 includes a sapphire substrate 21, an n-type semiconductor layer 22, a p-type semiconductor layer 23, an insulating film 24, and a p-side electrode 25 and an n-side electrode 26. An n-type semiconductor layer 22 is formed under the sapphire substrate 21, and a p-type semiconductor layer 23 is formed under the n-type semiconductor layer 22. The insulating film 24 covers the n-type semiconductor layer 22 and the p-type semiconductor layer 23 except for two openings, and the p-type semiconductor layer 23, the p-side electrode 25, and the n-type semiconductor layer 22 are formed in each opening. The n-side electrode 26 is connected.

  The circuit board 14 has internal connection electrodes 15a and 16a formed on the upper surface, and the internal connection electrodes 15a and 16a are connected to the external connection electrodes 15 and 16 through the through-hole electrodes 15b and 16b. The p-side and n-side electrodes 25 and 26 of the LED die 20 are connected to the internal connection electrodes 15a and 16a, respectively.

  The sapphire substrate 21 is a transparent insulating substrate and has a thickness of 80 to 120 μm. The n-type semiconductor layer 22 is composed of a GaN buffer layer and an n-type GaN layer and has a thickness of about 5 μm. The p-type semiconductor layer 23 is composed of a metal multilayer film including a reflective layer and an atomic diffusion prevention layer and a p-type GaN layer, and has a thickness of about 1 μm. Although not shown, the light emitting layer is at the boundary between the p-type semiconductor layer 23 and the n-type semiconductor layer 22, and the planar shape is substantially the same as that of the p-type semiconductor layer 23. The insulating film 24 is made of SiO2 or polyimide and has a thickness of about several hundred nm to 1 [mu] m. The p-side electrode 25 and the n-side electrode 26 are bumps having Au or Cu as a core, and are formed by electrolytic plating and have a thickness of about 10 to 30 μm. The p-side electrode 25 and the n-side electrode 26 may be solder bumps formed by a printing method and heat treatment.

  The circuit board 14 has a thickness of several tens of μm to several hundreds of μm, and its material is selected from resin, ceramic, metal, and the like in consideration of thermal conductivity, reflectance, and the like. The external connection electrodes 15 and 16 and the internal connection electrodes 15a and 16a have a thickness of several μm to several tens of μm, and are Ni and Au plated copper foils. The through-hole electrodes 15b and 16b have a diameter of about 100 to 300 μm and are filled with metal inside. The p-side and n-side electrodes 25, 26 and the internal connection electrodes 15 a, 16 a are connected by Au—Sn eutectic so as not to melt by solder reflow when the LED device 10 is mounted on the mother board. When the p-side and n-side electrodes 25 and 26 are solder bumps, solder having a high melting point is used.

  The upper surface reflection member 11 is obtained by kneading and curing reflective fine particles such as titanium oxide in a silicone resin, and has a thickness of about 50 to 100 μm. Further, the upper surface reflecting member 11 may be a metal film. The side fluorescent member 12 is obtained by kneading and curing a phosphor in a silicone resin, and has a thickness of about 100 μm. The transparent resin 13 is a silicone resin. The LED die 20 and the side fluorescent member 12 are separated with a transparent resin 33 interposed therebetween. For this reason, the side fluorescent member 12 is not easily affected by the heat generated by the LED die 20, so that a phosphor that is weak against high temperatures can be used. In many cases, the distance from the bottom of the circuit board 14 to the top of the upper surface reflecting member 11 is about 600 μm to 800 μm.

  Next, the light emitted from the LED device 10 will be described with reference to FIG. A part of the light emitted from the boundary portion between the n-type semiconductor layer 22 and the p-type semiconductor layer 23 passes through the side surface of the sapphire substrate 21 and directly reaches the side fluorescent member 12, and the rest is the upper surface reflecting member 11 and the p-type. The light is reflected by the reflective layer inherent in the semiconductor layer 23, the surface of the circuit board 14, etc., and reaches the side fluorescent member 12. Various losses are ignored (the same applies below). When the LED die 20 is a blue light emitting diode, a part of the light reaching the side fluorescent member 12 passes through the side fluorescent member 12 as it is, and the rest is wavelength-converted by the phosphor of the side fluorescent member 12. The wavelength-converted light is emitted isotropically, but the wavelength-converted light wave returning to the inside of the LED device 10 is emitted from the side surface by repeating reflection. For this reason, the side of the light distribution of white light synthesized by combining the blue light passing through the side fluorescent member 12 and the wavelength-converted light is stronger. When the LED die 20 emits near-ultraviolet light, all of the light reaching the side fluorescent member 12 is converted into white light, and the wavelength-converted light returning to the inside of the LED device 10 is emitted from the side surface by repeating reflection. The light distribution of white light becomes stronger on the side.

Next, a method for manufacturing the LED device 10 will be described. First, a collective substrate from which a plurality of circuit boards 14 can be obtained when separated is prepared. Next, a plurality of LED dies 20 are flip-chip mounted on the collective substrate, and the LED die 20 is covered with the transparent resin 13 together with the surface of the collective substrate. At this time, the wavelength range of the emission peak of the LED die 20 is preferably within ± 1 nm. Subsequently, after laminating the upper surface reflection member 11, the upper surface reflection member 11 and the transparent resin 13 are shaved at a predetermined width corresponding to the emission peak wavelength in a region to be a peripheral portion of the circuit board 14, and the groove formed thereby The side fluorescent member 12 is filled. The groove width may be adjusted by selecting the blade thickness or adjusting the blade position. Finally, the collective substrate is cut together with the upper-surface reflecting member 11 and the side fluorescent member 12, and the LED device 10 is obtained as a single piece. The squeegee may be used for covering with the transparent resin 13, laminating the upper surface reflecting member 11, and filling the side fluorescent member 12. The upper surface reflecting member 11, the side fluorescent member 12, and the transparent resin 13 are subjected to heat treatment for curing or semi-curing each time the respective members are arranged. When the upper surface reflecting member 11 is laminated, the sheet-like upper surface reflecting member 11 may be attached. Further, the surface of the circuit board 14 may be slightly shaved when forming the grooves.

The illumination device 30 according to the first embodiment of the present invention including the LED device 10 will be described with reference to FIG. 3A and 3B are explanatory diagrams of the lighting device 30, where FIG. 3A is a cross-sectional view and FIG. 3B is a plan view. The cross-sectional view of (a) is drawn along the line BB of (b). The lighting device 30 includes a mother substrate 32, and a reflecting plate 31 is disposed on the mother substrate 32. The reflecting plate 31 is disposed on the side of the LED device 10 mounted on the mother board 32, and the side close to the LED device 10 is lowered. Light rays L1 and L2 emitted from the side surface of the LED device 10 are diffusely reflected on the slope of the reflector 31. As shown in (b), when the illumination device 30 is viewed from above, the reflector 31 surrounds the four sides of the LED device 10. The LED device 10 disposed in the center can see the upper side fluorescent member 12 and the upper surface reflecting member 11, and the surface of the mother substrate 32 can be seen between the LED device 10 and the reflecting plate 31. If a large number of lighting devices 30 are prepared and arranged in a plane, a larger lighting device can be configured.
(Second Embodiment)

  In the LED device 10 of the first embodiment shown in FIGS. 1 and 2, the side fluorescent member 12 covers the side portions of the upper surface reflecting member 11 and the transparent resin 13. This is because the upper surface reflection member 11 is laminated on the transparent resin 13 in the state of the collective substrate, and then a groove is formed in the laminate of the transparent resin 13 and the upper surface reflection member 11, and the side fluorescent member 12 is filled in the groove. there were. Even if the order of the manufacturing process is changed and the LED die is covered with a transparent resin, a groove is formed in the transparent resin, and the side surface fluorescent member is filled in the groove, and then the upper surface reflecting member is laminated, the chromaticity management is still possible. A side-emitting LED device that is easy and easy to manufacture can be obtained. Moreover, although the illuminating device 30 of 1st Embodiment shown in FIG. 3 was provided with the reflecting plate 31 as an optical member in the side part of the LED apparatus 10, an optical member is not restricted to a reflecting plate, For example, even if it is a light-guide plate. good. Therefore, as a second embodiment of the present invention with reference to FIGS. 4 to 6, an LED device 40 manufactured in the above-described process and an illumination device 60 including a light guide plate 61 on a side portion of the LED device 40 will be described.

  The outer shape of the LED device 40 (semiconductor light emitting device) in the second embodiment of the present invention will be described with reference to FIG. 4A and 4B are external views of the LED device 40, where FIG. 4A is a plan view and FIG. 4B is a front view. Since the circuit board 14 of the LED device 40 is the same as the circuit board 14 of the LED device 10 shown in FIG. 1, the bottom view of the LED device 40 is the same as FIG. When the LED device 40 is viewed from above, a rectangular upper surface reflection member 41 can be seen (a). When the LED device 40 is viewed from the front, there is an upper surface reflecting member 41 at the upper part, a side fluorescent member 42 below it, the circuit board 14 at the lower part, and the external connection electrodes 15 and 16 at the lower part of the circuit board 14. Is visible (b).

  The internal structure of the LED device 40 will be described with reference to FIG. FIG. 5 is a cross-sectional view of the LED device 40 drawn along the CC line in FIG. The LED die 20 is flip-chip mounted on the circuit board 14, the LED die 20 is covered with the transparent resin 43, and the side fluorescent member 42 is on the side of the transparent resin 43. Furthermore, the upper surface reflecting member 41 is laminated on the transparent resin 43 and the side fluorescent member 42. The side fluorescent member 42 has a frame shape similarly to the LED device 10 shown in FIG. 2, and the bottom portion thereof is fitted into the concave portion of the circuit board 14. Like the circuit board 14, the LED die 20 is the same as the LED die 20 of the LED device 10. Further, the upper surface reflecting member 41, the side surface fluorescent member 42, and the transparent resin 43 are the same material as the upper surface reflecting member 11, the side surface fluorescent member 12, and the transparent resin 13 of the LED device 10. The upper surface reflecting member 41 and the side fluorescent member 42 are different in shape from the upper surface reflecting member 11 and the side fluorescent member 12 of the LED device 10.

  Next, the light emitted from the LED device 40 will be described with reference to FIG. Similarly to the LED device 10 of the first embodiment shown in FIGS. 1 and 2, the LED device 40 also has a lateral light distribution that becomes stronger. The difference between the LED device 40 and the LED device 10 of the present embodiment is that there is no outgoing light upward from the side fluorescent member 42 because the upper surface reflecting member 41 covers the upper part of the side fluorescent member 42 in the LED device 40. It is. When the LED die 20 is a blue light emitting diode, the LED device 10 has no blue component in the upward light from the side fluorescent member 12, and thus the color unevenness occurs upward as a white light source. On the other hand, since the LED device 40 has no light directed upward from the side fluorescent member 42, the color unevenness is reduced.

  Next, a method for manufacturing the LED device 40 will be described. Similar to the LED device 10 of the first embodiment, first, a collective substrate that provides a plurality of circuit boards 14 when singulated is prepared. After the LED die 20 is flip-chip mounted on the collective substrate, the LED together with the surface of the collective substrate is provided. The die 20 is covered with a transparent resin 43 (transparent resin 13 in the LED device 10). Subsequently, the transparent resin 43 is shaved with a predetermined width in a region to be a peripheral portion of the circuit board 14, and the side fluorescent member 42 is filled in the groove formed thereby. When the upper surface reflection member 41 is finally laminated, the LED device 40 is obtained by cutting the aggregate substrate together with the upper surface reflection member 41 and the side fluorescent member 42 into individual pieces. The covering with the transparent resin 43, the filling of the side fluorescent member 42, and the lamination of the upper surface reflecting member 41 may be a squeegee. The transparent resin 43, the side fluorescent member 42, and the top reflecting member 41 are subjected to heat treatment for curing or semi-curing each time the respective members are arranged. After the side fluorescent member 42 is filled, it may be polished to expose the surface of the transparent resin 43. When the upper surface reflecting member 41 is laminated, a sheet-like upper surface reflecting member 41 may be attached instead of the squeegee. Further, the surface of the circuit board 14 may be slightly shaved when forming the grooves.

  The illuminating device 60 in 2nd Embodiment of this invention provided with the LED device 40 with FIG. 6 is demonstrated. 6A and 6B are explanatory views of the lighting device 60, where FIG. 6A is a cross-sectional view and FIG. 6B is a plan view. The cross-sectional view of (a) is drawn along the DD line of (b). The illumination device 60 includes a mother substrate 65, and a light guide plate 61 is disposed on the mother substrate 65. The light guide plate 61 is disposed on the side portion of the LED device 40 mounted on the mother board 65. The light guide plate 61 includes a transparent light guide layer 62 at the top and a reflective layer 64 at the bottom, in which the diffusion particles 63 are dispersed. The light beam L3 emitted from the side surface of the LED device 40 and incident on the light guide layer 62 is diffused by the diffusing particles 63 and an upward component appears. Similarly, the light beam L4 is reflected by the upper surface of the light guide layer 62, and a component appears that is reflected downward by the diffusing particles 63 and reflected by the reflective layer 64 and emitted upward. The light beams L3 and L4 are an example of upward light, and the light incident on the light guide layer 62 repeats diffusion and reflection and is emitted upward.

Next, a plan view (b) of the illumination device 60 will be described. When the illumination device 60 is viewed from above, the light guide plate 61 surrounds the LED device 40. In other words, the LED device 40 is disposed in a hole formed in the light guide plate 61. In the LED device 40, the upper surface reflection member 41 can be seen, and the surface of the mother board 65 can be seen between the LED device 40 and the light guide plate 61. If a plurality of holes are formed in a large-area light guide plate and the LED device 40 is disposed in each hole, a larger illuminating device can be configured.
(Third embodiment)

  The LED devices 10 and 40 in the first and second embodiments emit light from four side surfaces, but may emit light from two opposite side surfaces. Further, when an illumination device is configured using this LED device as a light source, it is preferable to arrange a plurality of LED devices so that surfaces that do not emit light are adjacent to each other, and to arrange an optical member only on a side surface that emits light. Accordingly, FIGS. 7 to 9 illustrate a LED device 70 that emits light from two opposing side surfaces and a lighting device 90 in which a plurality of LED devices 70 are arranged and arranged in a line as a third embodiment of the present invention.

  The outer shape of the LED device 70 (semiconductor light emitting device) in the third embodiment of the present invention will be described with reference to FIG. 7A and 7B are external views of the LED device 70, where FIG. 7A is a plan view, FIG. 7B is a front view, and FIG. 7C is a right side view. Since the circuit board 14 of the LED device 70 is the same as the circuit board 14 of the LED devices 10 and 40 shown in FIGS. 1 and 4, the bottom view of the LED device 70 is the same as FIG. When the LED device 70 is viewed from above, the side fluorescent members 72 can be seen on the left and right sides, and the top reflective member 71 can be seen so as to be sandwiched between the side fluorescent members 72 (a). When the LED device 70 is viewed from the front, the side fluorescent member 72 can be seen on the left and right sides of the upper part of the circuit board 14, the side reflecting member 71a can be seen between the side fluorescent members 72, and the lower part (bottom part) of the circuit board 14 can be externally connected. The electrodes 15 and 16 are visible (b). As will be described later, the upper surface reflection member 71 and the side surface reflection member 71 a are integrally formed, so that the upper part of the side surface reflection member 71 a is also the upper surface reflection member 71. When the LED device 70 is viewed from the right side, the side fluorescent member 72 is visible at the top of the circuit board 14 and the external connection electrode 16 is visible at the bottom of the circuit board 14 (c).

  The internal structure of the LED device 70 will be described with reference to FIG. 8A and 8B are cross-sectional views of the LED device 70, where FIG. 8A is a cross-sectional view drawn along the EE line of FIG. 7A, and FIG. 8B is a cross-sectional view drawn along the FF line of FIG. FIG. Similar to the circuit board 14, the LED die 20 in FIG. 8 is the same as the LED die 20 shown in FIGS. Moreover, the upper surface reflection member 71 and the side surface reflection member 71a are the same material as the upper surface reflection members 11 and 41 shown in FIGS. The side fluorescent member 72 and the transparent resin 73 are also the same material as the side fluorescent members 12 and 42 and the transparent resins 13 and 43 shown in FIGS. 2 and 5, and the shape of the side fluorescent member 72 is different.

  As shown in FIG. 8, in the LED device 70, the LED die 20 is flip-chip mounted on the circuit board 14 similarly to the LED devices 10 and 40 shown in FIGS. 2 and 5, and the LED die 20 is attached to the transparent resin 73 (FIG. 2). , 5 is covered with a transparent resin 13, 43). The difference from the LED device 10 shown in FIG. 2 is that, in the LED device 70, the side fluorescent member 72 is provided only on the left and right side surfaces of (a), and the side surface reflecting member 71a occupies the left and right side surfaces of (b). That is.

  Next, light emitted from the LED device 70 will be described with reference to FIGS. Similarly to the LED device 10 shown in FIG. 2, the LED device 70 also has a strong light distribution in the side surface direction. 2 and 5 is different from the LED devices 10 and 40 in that the LED devices 10 and 40 emit light from four side surfaces, whereas the LED device 70 includes two side fluorescent members 72. The light is emitted only from the surface.

Next, a method for manufacturing the LED device 70 will be described. Similar to the LED device 10 of the first embodiment, first, a collective substrate that provides a plurality of circuit boards 14 when singulated is prepared. After the LED die 20 is flip-chip mounted on the collective substrate, the LED together with the surface of the collective substrate is provided. The die 20 is covered with a transparent resin 73 (transparent resin 13 in the LED device 10). Subsequently, the transparent resin 73 is shaved with a predetermined width in a region to be a side portion of the circuit board 14 on which the side reflection member 71a is disposed, and the side reflection member 71a is filled in the groove formed thereby, Laminate. Next, the upper surface reflection member 71, the side surface reflection member 71a, and the transparent resin 73 are shaved with a predetermined width in a region to be a side portion of the circuit board 14 on which the side surface fluorescent member 72 is disposed, and the side surface fluorescent member 72 is formed in the groove formed by this. Fill. Finally, the LED device 70 is obtained by cutting the collective substrate together with the upper surface reflecting member 71, the side surface reflecting member 71a, and the side surface fluorescent member 72 into individual pieces. Covering with the transparent resin 73, filling of the side reflecting member 71a, stacking of the top reflecting member 71, and filling of the side fluorescent member 72 may be a squeegee. The transparent resin 73, the side fluorescent member 72, the side reflecting member 71a, and the top reflecting member 71 are subjected to heat treatment for curing or semi-curing each time the respective members are arranged.

  In the LED device 70, the upper surface reflection member 71 and the side surface reflection member 71a are integrally formed. If the upper surface reflecting member 71 and the side surface reflecting member 71a are separated and the side surface reflecting member 71a is formed in a collective substrate state, the upper surface reflecting member 71 may be laminated. At this time, a sheet-like reflecting member may be prepared, and this reflecting member may be attached as the upper surface reflecting member 41. The top reflecting member may be a metal layer. Further, in the LED device that emits light only from the two side surfaces, the upper portion of the side fluorescent member may be covered with the upper surface reflecting member as in the LED device 40 of the second embodiment. In this case, the side-surface reflecting member and the upper-surface reflecting member may be disposed after the side-surface fluorescent member is first disposed in the aggregate substrate state.

  Next, an illuminating device 90 according to a third embodiment of the present invention provided with a plurality of LED devices 70 will be described with reference to FIG. 9A and 9B are explanatory views of the lighting device 90, where FIG. 9A is a cross-sectional view and FIG. 9B is a plan view. The cross-sectional view of (a) is drawn along the GG line of (b). As shown in (a), the lighting device 90 includes a mother substrate 92, and a light guide plate 91 is disposed on the mother substrate 92. The light guide plate 91 is disposed on the side portion of the LED device 70 mounted on the mother substrate 92. The light guide plate 91 includes a prism 91a at the lower part. The light beam L5 emitted from the side surface of the LED device 70 and incident on the light guide plate 91 is reflected by the prism 91a and travels upward. Similarly, the light beam L6 is reflected by the upper surface of the light guide plate 91, and then reflected by the prism 91a and directed upward. The light beams L5 and L6 are an example, and light incident on the light guide plate 91 is emitted upward by reflection by the prism 91a.

Next, a plan view (b) of the illumination device 90 will be described. When the illumination device 90 is viewed from above, a plurality of LED devices 70 are arranged in a line. At this time, in each LED device 70, the side reflection members 71a (see FIG. 7) are adjacent to each other. In the drawing, light guide plates 91 are arranged on the left and right sides of the LED device 70. The surface of the mother board 92 is visible between the LED devices 70 and between the LED device 70 and the light guide plate 91.
(Fourth embodiment)

  Although LED device 10,40,70 in 1st-3rd embodiment was equipped with the circuit board 14, the LED device of this invention does not need to be provided with the circuit board. Accordingly, an LED device 100 that does not include a circuit board will be described as a fourth embodiment of the present invention with reference to FIG. FIG. 10 is a cross-sectional view of the LED device 100 (semiconductor light emitting device). The LED die 20a differs from the LED die 20 shown in FIGS. 2, 5, and 8 in the LED device 100 in the opening of the insulating film 24a and the shapes of the p-side electrode 25a and the n-side electrode 26a. In response to the fact that the LED device 100 does not include a circuit board, the planar size of the n-side electrode 26a is increased by laminating the p-type semiconductor layer 23 via the insulating film 24a. For this reason, the p-side electrode 25a is downsized. The bottom reflecting member 104 is obtained by kneading and curing reflective fine particles such as TiO 2 in a silicone resin. The upper surface reflecting member 101, the side fluorescent member 102, and the transparent resin 103 are the same materials as the upper surface reflecting member 11, the side fluorescent member 12, and the transparent resin 13 in the LED device 10 of FIG.

A bottom surface reflecting member 104 is disposed at the bottom of the LED device 100. The bottom surface of the bottom reflecting member 104 has the same height as the bottom surfaces of the p-side and n-side electrodes 25a and 26a. Further, external connection electrodes 105 and 106 are formed on the bottom surface of the bottom reflecting member 104, and the external connection electrodes 105 and 106 are connected to the p-side and n-side electrodes 25a and 26a. The LED die 20 a is covered with a transparent resin 103, and the upper surface reflecting member 101 is laminated on the transparent resin 103. Bottom reflective member 1
There is a side fluorescent member 102 in the peripheral portion of 04, and the side fluorescent member 102 covers the side portions of the transparent resin 103 and the upper surface reflecting member 101. The light emission characteristics of the LED device 100 are substantially equal to those of the LED device 10 of the first embodiment (see FIGS. 1 and 2).

  Next, a method for manufacturing the LED device 100 will be described. First, a pressure-sensitive adhesive sheet is prepared, and a plurality of LED dies 20a are arranged on the pressure-sensitive adhesive sheet at a pitch at which the LED device 100 can be obtained by dividing into pieces. At this time, the p-side and n-side electrodes 25a and 26a are submerged in the adhesive layer of the adhesive sheet. Next, when the LED die 20a is covered with the transparent resin 103 together with the surface of the adhesive sheet, and the upper surface reflecting member 101 is laminated, the upper surface reflecting member 101 and the transparent resin 103 with a predetermined width are disposed in the region where the side fluorescent member 102 is disposed. The side fluorescent member 102 is filled into the groove formed by shaving. Next, the pressure-sensitive adhesive sheet is peeled off, and the wafer composed of the LED die 20a, the upper surface reflecting member 101, the side fluorescent member 102, and the transparent resin 103 is turned upside down, and the bottom surface reflecting member 104 is applied. Thereafter, the bottom reflecting member 104 is polished so that the bottom surfaces of the p-side and n-side electrodes 25a and 26a are exposed, and the external connection electrodes 105 and 106 are formed by plating. Finally, the wafer is singulated to obtain the LED device 100.

  The LED device 100 corresponds to a device obtained by replacing the circuit board 14 of the LED device 10 shown in FIGS. Similarly, the circuit board 14 of the LED devices 40 and 70 in the second and third embodiments may be replaced with the bottom surface reflecting member 104.

  In the LED devices 10, 40, 70 of the first, second, and third embodiments, the LED die 20 is flip-mounted on the circuit board 14. However, the method of mounting the LED die on the circuit board is not limited to flip chip mounting. For example, the LED die may be die-bonded to the circuit board, and the electrode of the LED die and the electrode of the circuit board may be connected by a wire. The circuit board may be a lead frame.

10, 40, 70, 100 ... LED device (semiconductor light emitting device),
11, 41, 71, 101 ... upper surface reflecting member,
12, 42, 72, 102 ... side fluorescent member,
13, 43, 73, 103 ... transparent resin,
14 ... circuit board,
15, 16, 105, 106 ... external connection electrodes,
15a, 16a ... internal connection electrodes,
15b, 16b ... through-hole electrodes,
20, 20a ... LED die (semiconductor light emitting element),
21 ... sapphire substrate,
22 ... n-type semiconductor layer,
23 ... p-type semiconductor layer,
24, 24a ... insulating film,
25, 25a ... p-side electrode,
26, 26a ... n-side electrode,
30, 60, 90 ... lighting device,
31 ... reflector (optical member),
32, 65, 92 ... Mother board,
61, 91 ... Light guide plate (optical member),
62 ... light guide layer,
63 ... Diffusion particles,
64 ... reflective layer,
71a ... side reflection member,
91a ... Prism,
104 ... bottom reflecting member,
L1 to L6: rays.

Claims (8)

In a semiconductor light emitting device including an upper surface reflecting member on an upper part of a semiconductor light emitting element,
The semiconductor light emitting device is coated with a transparent resin,
It is equipped with a side fluorescent member on four sides,
Alternatively, a semiconductor light emitting device comprising a side fluorescent member on two opposing side surfaces and a side reflecting member on the other two opposing side surfaces.   The semiconductor light-emitting device according to claim 1, wherein the upper-surface reflecting member covers an upper portion of the side fluorescent member.   The semiconductor light emitting device according to claim 1, wherein the side fluorescent member covers a side portion of the upper surface reflecting member.   The semiconductor light emitting device according to claim 1, wherein the upper surface reflection member and the side surface reflection member are integrally formed.   The semiconductor light-emitting device according to claim 1, further comprising a bottom-surface reflecting member at a bottom portion.   Adjacent to a semiconductor light emitting device having an upper surface reflecting member on the transparent resin covering the semiconductor light emitting element and having a side fluorescent member on four side surfaces or two opposite side surfaces, light emitted from the side surface is emitted. An illumination device comprising an optical member facing upward of the semiconductor light emitting device.   The lighting device according to claim 6, wherein the optical member is a reflecting plate or a light guide plate.   The semiconductor light emitting device has two opposing side surfaces that do not emit light, and the plurality of semiconductor light emitting devices are arranged so that the side surfaces that do not emit light are adjacent to each other, and the optical member is disposed on the side surface that emits light The lighting device according to claim 6, wherein:

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