JP3604108B2 - Manufacturing method of chip type optical semiconductor - Google Patents

Manufacturing method of chip type optical semiconductor Download PDF

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JP3604108B2
JP3604108B2 JP03192497A JP3192497A JP3604108B2 JP 3604108 B2 JP3604108 B2 JP 3604108B2 JP 03192497 A JP03192497 A JP 03192497A JP 3192497 A JP3192497 A JP 3192497A JP 3604108 B2 JP3604108 B2 JP 3604108B2
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substrate
optical semiconductor
chip
light emitting
manufacturing
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JPH10229097A (en
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誠 長山
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株式会社シチズン電子
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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Description

【０００１】
【発明の属する技術分野】
本発明は、チップ型光半導体の製造方法に係り、特に発光ダイオード素子、フォトダイオード素子、フォトトランジスタ素子などの光半導体素子を基板の上に直接ダイボンドするタイプのチップ型光半導体の製造方法に関するものである。
【０００２】
【従来の技術】
従来、この種のチップ型光半導体は、例えば図４及び図５に示したような工程で製造されていた。この製造方法では先ず光半導体ウエハ１をダイシングシート２に接着し（イ）、次いでダイシングシート２上の光半導体ウエハ１を枡目状にダイシングして各発光チップ３毎に分離する（ロ）。その後、発光チップ３を１個ずつ吸着し易いように、エキスパンド工程においてダイシングシート２を引っ張り、隣接する発光チップ３同士の間隔を空ける（ハ）。
【０００３】
次の工程では、図５に示したように、吸着ノズルによって発光チップ３を１個ずつ基板４上に移動し、所定の電極上に導電性接着剤５を介してダイボンドする（ニ）。ダイボンドしたのち、基板４をキュア炉に通し、導電性接着剤５を溶融して基板４に発光チップ３を接合する。キュア炉から出した後に、発光チップ３の上面と基板４上の電極とを金属細線６でボンディングする（ホ）。そして、発光チップ３及び金属細線６を保護するために透光性樹脂７で基板４の全面を樹脂封止する（ヘ）。最後に、ダイシングマシーンによって封止樹脂７及び基板４を発光チップ３毎に枡目状に切断し、１個ずつのチップ型光半導体（チップ型発光ダイオード）８を得る（ト）。
【０００４】
図６は、上記製造方法によって形成されたチップ型発光ダイオード８の拡大斜視図である。このチップ型発光ダイオード８は、基板４の表面に形成された電極４ａ，４ｂ間に電流を流すことにより発光チップ３が発光する。
【０００５】
【発明が解決しようとする課題】
しかしながら、上記従来のチップ型光半導体の製造方法にあっては、ダイシングした発光チップ３を１個ずつ基板４上に移し替え、各々位置合わせしてからダイボンドする工程と、ダイボンドした発光チップ３と基板４上の電極とを金属細線６を用いてワイヤボンディングする工程とが必要となっていたために、作業工程が面倒であると共に作業時間がかかってしまうという問題があった。
【０００６】
そこで、本発明は半導体チップを基板上にダイボンドする工程を容易にすると共に、ダイボンドした発光チップのワイヤボンディング工程を省略することを目的としている。
【０００７】
【課題を解決するための手段】
上記課題を解決するために、本発明に係るチップ型光半導体の製造方法は、電極が形成された第１の基板に導電性接着剤を介して光半導体ウエハをダイボンドする工程と、前記第１の基板に切れ目を入れながら光半導体ウエハを個別の発光チップ毎にダイシングする工程と、ダイシングした前記光半導体ウエハの上面に導電性接着剤を介して、電極が形成された第２の基板をダイボンドする工程と、前記ダイシングによって生じた各発光チップ間の隙間に透光性樹脂を充填して封止する工程と、前記第１の基板、光半導体ウエハ及び第２の基板を前記透光性樹脂の充填箇所に沿って再度ダイシングして、両端に電極を有する個別の発光チップを得る工程とを備えたことを特徴とする。
【０００８】
また、上記第１の基板及び第２の基板は、導電性の基板もしくは表面に電極膜が形成された絶縁性の基板のいずれでも対象となる。導電性の基板としては、銅板やアルミニウム板のような金属基板が主であり、また絶縁性の基板としては、ガラスエポキシ板のような樹脂基板やポリエステルフィルム、ホリイミドフィルムのようなフレキシブル基板が主に利用される。
【０００９】
【発明の実施の形態】
以下、添付図面に基づいて本発明に係るチップ型光半導体の製造方法を詳細に説明する。図１は本発明に係るチップ型光半導体の製造工程を示したものである。この製造工程では、先ず第１に、全面に電極が形成された第１の基板９の上面全体に導電性接着剤１０を均一に塗布し、その上に光半導体ウエハ１１を位置決めして載せる（イ）。次に、これをキュア炉に通して導電性接着剤１０を硬化し、光半導体ウエハ１１と第１の基板９とを接着する。この時、導電性接着剤１０は、光半導体ウエハの全面に接着して全面電極を構成する。次のダイシング工程ではダイシングマシーンによって光半導体ウエハ１１を枡目状に切断して発光チップ１２毎に分割する（ロ）。この時、光半導体ウエハ１１と導電性接着剤１０及び第１の基板９まで切れ目を入れる。この時、第１の基板９は完全には切断しないように、ダイシングマシーンのブレードの深さを調整する。次いで、上記第１の基板９と同様に、全面に電極が形成された第２の基板１３の全面に導電性接着剤１０を塗布してから、発光チップ１２の上に位置決めして載せ、再びキュア炉に通して導電性接着剤１０を硬化し、発光チップ１２と第２の基板１３とを接着する（ハ）。そして、ダイシングによって発光チップ１２同士の間に発生した隙間に透光性樹脂１４を充填して発光チップ１２の周囲を樹脂封止する（ニ）。透光性樹脂１４はキュア炉に通すことで硬化する。なお、上記第１の基板９及び第２の基板１３に、銅板やアルミニウム板のような金属板を用いた場合には基板の全面がそのまま電極となるが、ガラスエポキシ板やフレキシブルフィルムを基板とする場合には表面に銅箔などのパターンを形成することで電極とすることができる。
【００１０】
次のダイシング工程では、上述のようにサンドイッチ構造となった第１の基板９、発光チップ１２及び第２の基板１３を、ダイシングマシーンによって発光チップ１２毎に一緒に切断する（ホ）。このダイシングマシーンに使用されるブレードは、最初のダイシングの時よりも幅の薄いものが使用される。従って、発光チップ１２の側面に樹脂封止した透光性樹脂１４を残すことができ、発光チップ１２の周囲を透光性樹脂１４が取り囲んだチップ型光半導体（チップ型発光ダイオード）１５が完成する。
【００１１】
図２は、上記製造方法によって形成されたチップ型発光ダイオード１５の拡大斜視図である。このチップ型発光ダイオード１５は、第１の基板９の電極と発光チップ１２の一方側の電極、及び第２の基板１３の電極と発光チップ１２の他方側の電極が、いずれも導電性接着剤１０を介して電気的に接続されている。従って、第１の基板９と第２の基板１３との間に電流を流すことにより発光チップ１２が発光する。
【００１２】
図３は、上記チップ型発光ダイオード１５をマザーボード１６上に実装した状態を示す断面図である。この場合、マザーボード１６に対して第１及び第２の基板９，１３が直交するようにチップ型発光ダイオード１５を載置し、マザーボード１６の表面に形成されたボード電極１７ａ，１７ｂ上に第１の基板９及び第２の基板１３の各端面を配置する。そして、両者を半田１８でそれぞれ接続することにより、第１の基板９と第２の基板１３との間に電流が流れ、発光チップ１２が発光して上方及び基板９，１３によって塞がれていない側方が光る。
【００１３】
このように、上記実施例では光半導体ウエハ１１を第１の基板９上に直接ダイボンドするので、従来のように発光チップを１個ずつ移し替えてダイボンドするのに比べて作業が極めて容易となる。また、上記実施例では第１の基板９と第２の基板１３との間に電気を流すだけで発光チップを発光させることができ、従来のようなワイヤボンディング作業を省略することができた。
【００１４】
【発明の効果】
以上説明したように、本発明に係るチップ型光半導体の製造方法によれば、光半導体ウエハを電極が形成された第１の基板及び第２の基板で挟んで形成しているので、前記第１の基板から第２の基板にかけて直接ダイシングすることによって、一対の電極で挟持された構造の発光チップを一括して大量生産することができる。また、前記第１の基板上に光半導体ウエハを接合した状態でダイシングして切り込みを入れた上で、第２の基板を接合し、前記切り込みを入れた箇所に透光性樹脂を充填し、この透光性樹脂が形成された箇所に沿ってダイシングを行っているため、ダイシング面が透光性樹脂で保護された発光チップを簡易に製造することができる。このように、本発明の製造方法によれば、少なくとも２回のダイシング工程を経ることによって、発光面となる側面が透光性樹脂で保護され、且つ一対の電極で挟持された構造の発光チップの生産が可能となる。
【図面の簡単な説明】
【図１】本発明に係るチップ型光半導体の製造工程図である。
【図２】本発明の製造方法により形成したチップ型発光ダイオードの斜視図である。
【図３】チップ型発光ダイオードのマザーボードへの実装状態を示す断面図である。
【図４】従来のチップ型光半導体の製造工程図である。
【図５】従来のチップ型光半導体の製造工程図である。
【図６】従来の製造方法により形成したチップ型発光ダイオードの斜視図である。
【符号の説明】
９ 第１の基板
１０ 導電性接着剤
１１ 光半導体ウエハ
１２ 発光チップ
１３ 第２の基板
１４ 透光性樹脂
１５ チップ型発光ダイオード（チップ型光半導体）[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method of manufacturing a chip-type optical semiconductor, and more particularly to light emitting diode element, photodiode elements, the type of method of manufacturing a chip-type light semiconductor optical semiconductor elements are die-bonded directly onto a substrate, such as a phototransistor element It is.
[0002]
[Prior art]
Conventionally, this type of chip-type optical semiconductor has been manufactured by the steps shown in FIGS. 4 and 5, for example. In this manufacturing method, first, the optical semiconductor wafer 1 is bonded to the dicing sheet 2 (A), and then the optical semiconductor wafer 1 on the dicing sheet 2 is diced into meshes and separated into light emitting chips 3 (B). After that, the dicing sheet 2 is pulled in the expanding step so that the light emitting chips 3 are easily sucked one by one, and the interval between the adjacent light emitting chips 3 is increased (c).
[0003]
In the next step, as shown in FIG. 5, the light emitting chips 3 are moved one by one onto the substrate 4 by the suction nozzle, and are die-bonded on predetermined electrodes via the conductive adhesive 5 (d). After die bonding, the substrate 4 is passed through a curing furnace, the conductive adhesive 5 is melted, and the light emitting chip 3 is bonded to the substrate 4. After taking out from the curing furnace, the upper surface of the light emitting chip 3 and the electrode on the substrate 4 are bonded by the thin metal wire 6 (e). Then, the entire surface of the substrate 4 is resin-sealed with a translucent resin 7 to protect the light emitting chip 3 and the thin metal wires 6 (f). Finally, the sealing resin 7 and the substrate 4 are cut into grids for each light-emitting chip 3 by a dicing machine to obtain one chip-type optical semiconductor (chip-type light-emitting diode) 8 (g).
[0004]
FIG. 6 is an enlarged perspective view of the chip-type light emitting diode 8 formed by the above manufacturing method. In the chip type light emitting diode 8, the light emitting chip 3 emits light when a current flows between the electrodes 4a and 4b formed on the surface of the substrate 4.
[0005]
[Problems to be solved by the invention]
However, in the above-described conventional method for manufacturing a chip-type optical semiconductor, the steps of transferring the diced light-emitting chips 3 one by one onto the substrate 4, aligning them each other, and die-bonding the light-emitting chips 3, Since a step of wire bonding between the electrode on the substrate 4 and the thin metal wire 6 is required, there is a problem that the working process is complicated and requires a long working time.
[0006]
Accordingly, it is an object of the present invention to facilitate the step of die-bonding a semiconductor chip on a substrate and to omit the wire bonding step of the die-bonded light emitting chip .
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, a method of manufacturing a chip-type optical semiconductor according to the present invention includes a step of die-bonding an optical semiconductor wafer to a first substrate on which electrodes are formed via a conductive adhesive; Dicing the optical semiconductor wafer into individual light emitting chips while making a cut in the substrate, and die bonding the second substrate on which electrodes are formed on the upper surface of the diced optical semiconductor wafer via a conductive adhesive. And filling the gap between the light emitting chips generated by the dicing with a translucent resin, and sealing the first substrate, the optical semiconductor wafer and the second substrate with the translucent resin. Dicing again along the filled portion to obtain individual light emitting chips having electrodes at both ends.
[0008]
In addition, the first substrate and the second substrate are both a conductive substrate and an insulating substrate having an electrode film formed on a surface thereof . As the conductive substrate, a metal substrate such as a copper plate or an aluminum plate is mainly used, and as the insulating substrate, a resin substrate such as a glass epoxy plate or a flexible substrate such as a polyester film or a polyimide film is used. Mainly used.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a method for manufacturing a chip-type optical semiconductor according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows a manufacturing process of a chip type optical semiconductor according to the present invention. In this manufacturing process, first, the conductive adhesive 10 is uniformly applied to the entire upper surface of the first substrate 9 having the electrodes formed on the entire surface, and the optical semiconductor wafer 11 is positioned and mounted thereon ( I). Next, this is passed through a curing furnace to cure the conductive adhesive 10, and the optical semiconductor wafer 11 and the first substrate 9 are bonded. At this time, the conductive adhesive 10 is adhered to the entire surface of the optical semiconductor wafer to form an entire surface electrode. In the next dicing step, the optical semiconductor wafer 11 is cut into meshes by a dicing machine and divided into light emitting chips 12 (b). At this time, a cut is made to the optical semiconductor wafer 11, the conductive adhesive 10, and the first substrate 9. At this time, the depth of the blade of the dicing machine is adjusted so that the first substrate 9 is not completely cut. Next, as in the case of the first substrate 9, the conductive adhesive 10 is applied to the entire surface of the second substrate 13 having the electrodes formed on the entire surface, and is then positioned and mounted on the light emitting chip 12, and again. The conductive adhesive 10 is hardened by passing through a curing furnace, and the light emitting chip 12 and the second substrate 13 are bonded (C). Then, the gap formed between the light emitting chips 12 by dicing is filled with the translucent resin 14 to seal the periphery of the light emitting chip 12 with the resin (d). The translucent resin 14 is cured by passing it through a cure furnace. When a metal plate such as a copper plate or an aluminum plate is used for the first substrate 9 and the second substrate 13, the entire surface of the substrate becomes an electrode as it is, but a glass epoxy plate or a flexible film is used as the substrate. In this case, an electrode can be formed by forming a pattern such as a copper foil on the surface.
[0010]
In the next dicing step, the first substrate 9, the light emitting chip 12, and the second substrate 13 having the sandwich structure as described above are cut together for each light emitting chip 12 by a dicing machine (e). The blade used in this dicing machine has a smaller width than that of the first dicing. Therefore, the light- transmitting resin 14 sealed with resin can be left on the side surface of the light-emitting chip 12, and a chip-type optical semiconductor (chip-type light-emitting diode) 15 in which the light-transmitting resin 14 surrounds the periphery of the light-emitting chip 12 is completed. I do.
[0011]
FIG. 2 is an enlarged perspective view of the chip type light emitting diode 15 formed by the above manufacturing method. In the chip-type light emitting diode 15, the electrode of the first substrate 9 and the electrode on one side of the light emitting chip 12, and the electrode of the second substrate 13 and the electrode on the other side of the light emitting chip 12 are all made of a conductive adhesive. 10 are electrically connected. Therefore, when a current flows between the first substrate 9 and the second substrate 13, the light emitting chip 12 emits light.
[0012]
FIG. 3 is a cross-sectional view showing a state where the chip-type light emitting diode 15 is mounted on a motherboard 16. In this case, the chip-type light emitting diode 15 is mounted so that the first and second substrates 9 and 13 are orthogonal to the motherboard 16, and the first light emitting diodes 15 are mounted on the board electrodes 17a and 17b formed on the surface of the motherboard 16. The respective end faces of the substrate 9 and the second substrate 13 are arranged. Then, by connecting them with the solder 18, a current flows between the first substrate 9 and the second substrate 13, and the light emitting chip 12 emits light and is closed by the upper part and the substrates 9 and 13. No side glows.
[0013]
As described above, in the above embodiment, since the optical semiconductor wafer 11 is directly die-bonded on the first substrate 9, the operation is extremely easy as compared with the conventional case where the light-emitting chips are transferred one by one and die- bonded. . Further, in the above-described embodiment, the light emitting chip can emit light only by passing electricity between the first substrate 9 and the second substrate 13, and the wire bonding operation as in the related art can be omitted.
[0014]
【The invention's effect】
As described above, according to the method for manufacturing a chip-type optical semiconductor according to the present invention, the optical semiconductor wafer is formed between the first substrate and the second substrate on which the electrodes are formed. By directly dicing from the first substrate to the second substrate, it is possible to mass-produce light emitting chips having a structure sandwiched between a pair of electrodes. Further, after dicing and making a cut in a state in which the optical semiconductor wafer is bonded on the first substrate, the second substrate is bonded, and a portion where the cut is made is filled with a translucent resin. Since dicing is performed along the place where the light-transmitting resin is formed, a light-emitting chip whose dicing surface is protected by the light-transmitting resin can be easily manufactured. As described above, according to the manufacturing method of the present invention, the light emitting chip having a structure in which the side surface serving as the light emitting surface is protected by the translucent resin and is sandwiched between the pair of electrodes by performing at least two dicing steps Can be produced.
[Brief description of the drawings]
FIG. 1 is a manufacturing process diagram of a chip-type optical semiconductor according to the present invention.
FIG. 2 is a perspective view of a chip-type light emitting diode formed by the manufacturing method of the present invention.
FIG. 3 is a cross-sectional view showing a mounted state of a chip type light emitting diode on a motherboard.
FIG. 4 is a manufacturing process diagram of a conventional chip type optical semiconductor.
FIG. 5 is a manufacturing process diagram of a conventional chip type optical semiconductor.
FIG. 6 is a perspective view of a chip-type light emitting diode formed by a conventional manufacturing method.
[Explanation of symbols]
9 first substrate 10 conductive adhesive 11 optical semiconductor wafer 12 light emitting chip 13 second substrate 14 translucent resin 15 chip type light emitting diode (chip type optical semiconductor)

Claims (2)

電極が形成された第１の基板に導電性接着剤を介して光半導体ウエハをダイボンドする工程と、A step of die-bonding the optical semiconductor wafer to the first substrate on which the electrodes are formed via a conductive adhesive;
前記第１の基板に切れ目を入れながら光半導体ウエハを個別の発光チップ毎にダイシングする工程と、  Dicing the optical semiconductor wafer into individual light emitting chips while making a cut in the first substrate;
ダイシングした前記光半導体ウエハの上面に導電性接着剤を介して、電極が形成された第２の基板をダイボンドする工程と、  A step of die-bonding a second substrate on which electrodes are formed on the upper surface of the diced optical semiconductor wafer via a conductive adhesive;
前記ダイシングによって生じた各発光チップ間の隙間に透光性樹脂を充填して封止する工程と、  A step of filling a gap between the respective light emitting chips generated by the dicing with a transparent resin and sealing the gap;
前記第１の基板、光半導体ウエハ及び第２の基板を前記透光性樹脂の充填箇所に沿って再度ダイシングして、両端に電極を有する個別の発光チップを得る工程とを備えたことを特徴とするチップ型光半導体の製造方法。  Dicing the first substrate, the optical semiconductor wafer, and the second substrate again along the translucent resin-filled portion to obtain individual light-emitting chips having electrodes at both ends. Of manufacturing a chip type optical semiconductor. 上記第１の基板及び第２の基板は、導電性の基板もしくは表面に電極膜が形成された絶縁性の基板のいずれかであることを特徴とするチップ型光半導体の製造方法。The method of manufacturing a chip-type optical semiconductor, wherein the first substrate and the second substrate are either a conductive substrate or an insulating substrate having an electrode film formed on a surface thereof.
JP03192497A 1997-02-17 1997-02-17 Manufacturing method of chip type optical semiconductor Expired - Lifetime JP3604108B2 (en)

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JP3235586B2 (en) * 1999-02-25 2001-12-04 日本電気株式会社 Semiconductor device and method of manufacturing semiconductor device
KR100420433B1 (en) * 1999-12-30 2004-03-03 앰코 테크놀로지 코리아 주식회사 Film adhesive for semiconductor package
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DE102008014927A1 (en) 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Method for producing a plurality of radiation-emitting components and radiation-emitting component
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