JP4863193B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device in which a semiconductor light emitting element is mounted inside a recess provided in a substrate and the semiconductor light emitting element is sealed with a resin.

  As the semiconductor light emitting device, for example, there is a structure as shown in FIGS. 7 is a plan view, and FIG. 8 is a cross-sectional view taken along line AA of FIG. That is, a pair of circuit patterns 51a and 51b are formed at opposite end portions on the surface side of the insulator 50, and each circuit pattern 51a and 51b is formed so as to wrap around from the edge to the back surface side through the side surface side. Yes. In addition, a recess 52 is provided in a substantially central portion on the surface side of the insulator 50, and a circuit pattern is formed on the entire inner bottom surface 53 and the entire inner peripheral surface 54 of the recess 52 so as to be formed on the surface side of the insulator 50. The other circuit pattern 51b is connected to one circuit pattern 51a of the pair of circuit patterns 51a and 51b.

  A semiconductor light emitting element 56 is placed on the inner bottom surface 53 of the recess 52 via a conductive adhesive 55, and a circuit pattern 51 a formed on the lower electrode of the semiconductor light emitting element 56 and the inner bottom surface 53 of the recess 52. Are connected to achieve electrical continuity. The upper electrode of the semiconductor light emitting element 56 is connected to a circuit pattern 51b extending toward a substantially central portion of the substrate via a bonding wire 57, thereby achieving electrical conduction.

Further, the semiconductor light emitting element 56 and the bonding wire 57 are sealed with resin so as to be covered with the translucent resin 58, so that the semiconductor light emitting element 56 is protected from the external environment such as moisture, dust and gas, and the bonding wire 57 is vibrated. And protection from mechanical stress such as impact (for example, see Patent Document 1).
JP-A-7-202271

  By the way, the surface-mounted semiconductor light emitting device is often used in combination with other surface-mounted circuit components, and surface mounting by solder reflow is generally performed on a component mounting board of an electronic device. In that case, since the surface-mount type semiconductor light emitting device is generally extremely small, the entire semiconductor light emitting device rises to substantially the same temperature as the heating temperature by solder reflow.

  At that time, peeling occurs at the contact interface between the translucent resin sealing the semiconductor light emitting element and the bonding wire and the stress caused by the difference in thermal expansion coefficient between the circuit pattern formed on the inner bottom surface of the recess. Then, the peeled translucent resin acts to lift the conductive adhesive and the semiconductor light emitting element above the circuit pattern, and the conductive adhesive peels off the circuit pattern, resulting in optical characteristic deterioration and electrical characteristic failure. there is a possibility.

  Even after the semiconductor light emitting device is mounted on the component mounting board, the translucent resin repeatedly expands and contracts due to temperature changes caused by repeated flashing of the semiconductor light emitting device, and the resin stress at that time also has the same effect as described above. There is a possibility that optical characteristic deterioration and electrical characteristic defect may occur.

  Therefore, the present invention was devised in view of the above problems, and the object of the present invention is to reduce the influence of the thermal stress of the sealing resin under a high-temperature mounting environment and under a use environment with a large temperature change. Providing a highly reliable semiconductor light-emitting device that does not cause optical property deterioration and electrical property failure by suppressing interface peeling between a pattern and a conductive adhesive that electrically connects the circuit pattern and the semiconductor light-emitting element To do.

In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention includes at least one semiconductor light emitting element, and a semiconductor light emitting element mounting substrate for forming an inner bottom portion of a recess for mounting the semiconductor light emitting element. An insulating substrate having a first through-hole constituting the inner peripheral portion of the concave portion, and a second through-hole constituting the inner peripheral portion of the concave portion, the first through-hole and the second An adhesive sheet that is disposed between the semiconductor light emitting element substrate and the insulating substrate so that a line connecting the respective centers of the through holes is substantially perpendicular to the semiconductor light emitting element mounting substrate; A metal reflecting surface that covers a part of the inner peripheral portion of the concave portion constituted by the first through hole and the second through hole, and a metal pattern that is formed on the inner bottom portion of the concave portion and mounts the semiconductor light emitting element And the semiconductor mounted in the recess A semiconductor light-emitting device having a sealing resin portion for sealing the light emitting device, the first through hole and the second through-hole, toward the second through-hole to the opening of the first through hole Formed with a surface inclined outward at substantially the same angle with respect to a line connecting the respective centers, and formed with a continuous surface, and at least a part of the inner peripheral surface of the second through hole is sealed In addition to being exposed to the resin portion, two are provided symmetrically around the semiconductor light emitting element .

  The semiconductor light-emitting device of the present invention employs a base substrate constituting the semiconductor light-emitting device in which two substrates each having at least one substrate as an insulating substrate are bonded together via an adhesive sheet. The metal pattern was formed in the inner bottom part and inner peripheral part of the recessed part which provided the recessed part which penetrated. Then, a part of the metal pattern that forms the inner peripheral surface of the recess is removed to expose a part of the adhesive sheet, or a part of the adhesive sheet and the insulating substrate, and the semiconductor mounted in the recess. A sealing resin for sealing the light emitting element and a part of the adhesive sheet exposed in the recess or each part of the adhesive sheet and the insulating substrate are in close contact to form an interface.

  As a result, the adhesive force is stronger at the contact interface between the sealing resin and a part of the exposed adhesive sheet or between the adhesive sheet and each of the insulating substrate than the contact interface between the sealing resin and the metal pattern. Even under the influence of the thermal stress of the sealing resin under high temperature mounting environment and usage environment where temperature change is large, the metal pattern formed on the inner bottom surface of the recess and the semiconductor light emitting element fixed to the metal pattern It is possible to suppress interfacial peeling from the adhesive or conductive adhesive.

  Therefore, by suppressing the interface peeling between the metal pattern formed on the inner bottom surface of the recess and the adhesive or conductive adhesive for fixing the semiconductor light emitting element to the metal pattern, optical characteristic deterioration and electrical characteristic failure are prevented. A highly reliable semiconductor light emitting device that does not occur can be realized.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIG. 1 to FIG. 6 (the same parts are given the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

  FIG. 1 is a perspective view showing an embodiment of the semiconductor light emitting device of the present invention, and FIG. 2 is a cross-sectional view taken along the line AA of FIG.

  A base substrate 3 is formed by bonding two insulating substrates 1a and 1b with an adhesive sheet 2 interposed therebetween. The adhesive sheet 2 is provided with a substantially circular through hole 4a at the center, and the insulating substrate 1a in contact with the adhesive sheet is also provided with a substantially circular through hole 4b. The centers of the through hole 4a of the adhesive sheet 2 and the through hole 4b of the insulating substrate 1a are located on substantially the same straight line perpendicular to the insulating substrate 1a. That is, the insulating substrate 1b that is in contact with the adhesive sheet 2 and does not have a through-hole is the inner bottom portion 5 at the center of the base substrate 3, and each of the through-hole 4a of the adhesive sheet 2 and the through-hole 4b of the insulating substrate 1a. A recess 8 is formed in which the peripheral surfaces 6a and 6b are inner peripheral portions and one of the through holes 4b of the insulating substrate 1a is an opening 7.

  In this case, the inner peripheral surfaces 6a and 6b of the through hole 4a of the adhesive sheet 2 and the through hole 4b of the insulating substrate 1a are directed from the through hole 4a of the adhesive sheet 2 toward the opening 7 of the through hole 4b of the insulating substrate 1a. The inner circumferential surface 6a, 6b forms a continuous surface, and is configured by a surface inclined outward at substantially the same angle with respect to the central axis X of the through hole 4a and the through hole 4b.

  A pair of metal patterns 9a and 9b are formed on both opposing edge portions on the front surface side of the base substrate 3 having the above configuration, and each metal pattern 9a and 9b passes from the edge portion of the base substrate 3 to the side surface side. It is formed so as to wrap around to the back side. Further, the metal patterns 9a and 9b formed on both edges of the base substrate 3 extend inward so as to face each other, and one of the metal patterns 9a is a recess 8 formed on the base substrate 3. The inner peripheral portion 10 extends to the inner bottom portion 5, and the inner peripheral surface 11 and the inner bottom surface 12 of the concave portion 8 are formed. The other metal pattern 9 b extends to the front of the recess 8.

  Then, the semiconductor light emitting element 14 is placed on the metal pattern 9a that forms the inner bottom surface 12 of the recess 8 via the conductive adhesive 13, and electrical conduction between the lower electrode of the semiconductor light emitting element 14 and the metal pattern 9a is performed. Is planned. On the other hand, the upper electrode of the semiconductor light emitting element 14 is connected to the metal pattern 9b via the bonding wire 15, and electrical connection between the upper electrode of the semiconductor light emitting element 14 and the metal pattern 9b is achieved.

  Further, the semiconductor light emitting element 14 and the bonding wire 15 are sealed so as to be covered with the translucent resin 16. The translucent resin 16 protects the semiconductor light emitting element 14 from an external environment such as moisture, dust, and gas, and protects the bonding wire 15 from mechanical stress such as vibration and impact. Further, the translucent resin 16 forms an interface with the light emitting surface of the semiconductor light emitting element 14, and the emitted light of the semiconductor light emitting element 14 is efficiently transmitted from the light emitting surface of the semiconductor light emitting element 14 into the translucent resin 16. It also has a function to emit well.

  By the way, a metal pattern 9 a extending from the edge of the base substrate 3 is formed on the inner peripheral portion 10 of the recess 8 so as to cover the inner peripheral portion 10, but not the entire inner peripheral portion 11. A portion where the metal pattern 9a is not formed is provided on each of the inner peripheral surface 6b of the through hole 4b of the insulating substrate 1a and the inner peripheral surface 6a of the through hole 4a of the adhesive sheet 2. As a specific method, after the metal pattern 9a is formed on the entire inner peripheral portion 10 of the recess 8, the metal pattern 9a is partially removed by etching.

  In this case, in the inner peripheral surface 6a of the through hole 4a of the adhesive sheet 2, the portion where the metal pattern 9a is removed does not extend from the upper end portion to the lower end portion of the inner peripheral surface 6a but from the upper end portion to the lower end portion. Halfway. That is, the metal pattern 9a remains without being removed under the inner peripheral surface 6a.

  As described above, the translucent resin filled in the concave portion having the inner bottom surface and the inner peripheral surface removes the metal pattern constituting the inner bottom surface and a part of the inner peripheral surface, and the metal pattern on the inner peripheral surface. The exposed through holes 4a of the adhesive sheet 2 and the through holes 4b of the insulating substrate 1a are in close contact with the inner peripheral surfaces 6a and 6b to form an interface.

  At this time, the adhesive sheet and insulating substrate exposed to the light-transmitting resin are stronger than the metal pattern. Therefore, even when thermal stress due to the light-transmitting resin is applied in a high-temperature mounting environment and in an actual usage state, the entire inner peripheral portion of the concave portion where the semiconductor light emitting element is mounted is covered with a metal pattern. In the case where the adhesive sheet and the insulating substrate are exposed, the effect of suppressing peeling works extremely strongly.

  As a result, the translucent resin does not apply a force for lifting the conductive adhesive and the semiconductor light emitting element above the metal pattern on the bottom surface of the recess, and the metal of the conductive adhesive applied on the metal pattern on the bottom surface of the recess. Separation from the pattern is suppressed, and a highly reliable semiconductor light-emitting device that does not cause deterioration of optical characteristics and poor electrical characteristics during mounting and long-term use can be realized.

  In addition, the metal pattern 9a on the inner peripheral surface of the concave portion is removed, and the inner peripheral surface 6a of the through hole 4a of the adhesive sheet 2 and the inner peripheral surface 6b of the through hole 4b of the insulating substrate 1a are exposed at least in one place. It is desirable to be provided in the shape of, but more desirably, two locations with substantially the same shape are provided at symmetrical positions across the semiconductor light emitting element located in the central portion of the recess, and two or more locations are provided in the arrangement procedure. is there. This is because peeling can be more reliably suppressed by preventing the adhesion distribution between the translucent resin and the exposed portion from being biased. In the present embodiment, exposed portions are provided at four locations across the semiconductor light emitting element.

  In the present embodiment, the recess inner peripheral portion formed by the inner peripheral surfaces 6a and 6b of the through hole 4a of the adhesive sheet 2 and the through hole 4b of the insulating substrate 1a is separated from the through hole 4a of the adhesive sheet 2 by the insulating substrate. The inner peripheral surfaces 6a and 6b are continuous with each other and are configured to face outwardly at substantially the same angle with respect to the central axis X of the through-hole 4a and the through-hole 4b toward the opening 7 of the through-hole 4b of 1a. The surface to be formed is formed.

  As a result, the light emitted from the semiconductor light emitting element in a substantially lateral direction is reflected by the metal pattern on the inner peripheral surface of the recess and directed upward, and the optical effect that emits as much light as possible to the outside, and the exposed adhesion It exhibits both the mechanical effect of suppressing peeling by the adhesion between the sheet and the insulating substrate and the translucent resin.

  Accordingly, the area of the metal pattern remaining after the removal, the shape, the area, the number of arrangement of the exposed portions, and the like are determined in consideration of the optical and mechanical characteristics required for the semiconductor light emitting device.

  Up to this point, the semiconductor light emitting device mounted in the recess has been described for a structure in which electrodes for driving the semiconductor light emitting device are arranged on both the upper and lower sides of the semiconductor light emitting device. Some semiconductor light emitting devices have electrodes disposed only on one side. However, it is common that a metal film for bonding / fixing is also formed on the side facing the electrode.

  A semiconductor light emitting device in which the semiconductor light emitting element having such a structure is mounted has a configuration as shown in FIGS. 3 is a perspective view, and FIG. 4 is a cross-sectional view taken along line AA of FIG.

  The semiconductor light emitting device of this configuration is the same as the semiconductor light emitting device of FIGS. 1 and 2 except that the configuration of the metal pattern formed on the base substrate is different.

  Specific differences in the metal pattern configuration from FIGS. 1 and 2 are as follows. Each of the pair of metal patterns 9 a and 9 b formed on the opposite edges on the surface side of the base substrate 3 extends inward and stops before the recess 8. Moreover, the metal pattern 9c which forms the inner peripheral surface 11 and the inner bottom surface 12 of the recessed part 8 is integrated. In other words, the metal patterns are separated and independent 3 of the metal patterns 9 a and 9 b extending inward from the edge of the base substrate 3 and the metal pattern 9 c integrally forming the inner peripheral surface 11 and the inner bottom surface 12 of the recess 8. It consists of a metal pattern of places.

  Then, the semiconductor light emitting element 14 is placed on the metal pattern 9c on the inner bottom surface 12 of the recess 8 formed separately and independently via the adhesive 17, and the two electrodes arranged on the upper surface of the semiconductor light emitting element 14 are formed. These are connected to two metal patterns 9a and 9b that are separated and independently extended inward through bonding wires 15, respectively.

  Further, there are portions where the metal pattern 9a is removed by etching on the inner peripheral surface 6b of the through hole 4b of the insulating substrate 1a and the inner peripheral surface 6a of the through hole 4a of the adhesive sheet 2, and in particular, the through hole 4a of the adhesive sheet 2 is removed. In the inner peripheral surface 6a, the portion where the metal pattern 9a is removed is from the upper end portion to the lower end portion of the inner peripheral surface 6a. That is, the metal pattern 9a is removed from the upper end portion to the lower end portion of the inner peripheral surface 6a.

  Further, the concave portion 8 in the above embodiment is configured such that the inner peripheral portion 10 of the concave portion 8 is the central axis of the through hole 4a and the through hole 4b from the through hole 4a of the adhesive sheet 2 toward the opening 7 of the through hole 4b of the insulating substrate 1a. However, the present invention is not limited to this. For example, the inner peripheral surface is formed of a surface parallel to the central axis X of the through hole. Also good.

  Also in this case, the metal pattern 9c on the inner peripheral surface 11 of the recess 8 is removed, and the inner peripheral surface 6a of the through hole 4a of the adhesive sheet 2 and the inner peripheral surface 6b of the through hole 4b of the insulating substrate 1a are exposed at least. It is desirable to provide at least one place in an arbitrary shape, and more desirably, one place by an arrangement method in which two places are provided in substantially the same shape at symmetrical positions across the semiconductor light emitting element 14 located in the central portion of the recess 8. Needless to say, it is provided as described above.

  As described above, a part of each of the inner peripheral surface 6a of the through hole 4a of the adhesive sheet 2 forming the inner peripheral portion 10 of the recess 8 and the inner peripheral surface 6b of the through hole 4b of the insulating substrate 1a is exposed from the metal pattern. However, only a part of the inner peripheral surface 6a of the through hole 4a of the adhesive sheet 2 is exposed from the metal pattern, and the inner peripheral surface 6b of the through hole 4b of the insulating substrate 1a can be entirely covered with the metal pattern. is there. In that case, the adhesive force is secured at the interface between the translucent resin and the exposed portion of the inner peripheral surface 6a of the through-hole 4a of the adhesive sheet 2 to exhibit a mechanical effect to suppress peeling and the penetration of the insulating substrate 1a. At the same time, an optical effect of effectively emitting light emitted from the semiconductor light emitting element in a substantially lateral direction to the outside by the metal reflecting surface covering the entire inner peripheral surface 6b of the hole 4b is also exhibited.

  Further, as shown in FIG. 5, the adhesive sheet 2 can be protruded into the recess 8. In this case, the contact area between the translucent resin 16 filled in the recess 8 and the adhesive sheet 2 is increased, the adhesion between the two members is increased, and the metal pattern 9c forming the inner bottom surface 12 of the recess 8 And the effect | action which suppresses peeling with the conductive adhesive 13 which fixes the semiconductor light-emitting element 14 to this metal pattern 9c acts very strongly. Also in this case, as described above, the inner peripheral surface 6b of the through hole 4b of the insulating substrate 1a can be covered with the entire metal pattern to be a reflective surface.

  The substrate on which the semiconductor light emitting element is mounted (the substrate constituting the inner bottom portion of the recess) can be replaced with an insulating substrate to be a metal substrate. In that case, it is necessary to provide an insulating layer between the metal substrate and the metal pattern at least in a portion where the metal pattern is formed. By using a metal substrate as the substrate, heat dissipation from the semiconductor light-emitting element is improved, and the brightness of the semiconductor light-emitting element is suppressed by reducing the light-emitting efficiency due to heat, and the stress of the sealing resin due to heat is suppressed. Thus, peeling can be prevented.

  FIG. 6 is a cross-sectional view showing another embodiment. The base substrate 3 is formed by bonding the insulating substrate 1 and the separated and independent metal plates 18 a and 18 b with the adhesive sheet 2 interposed therebetween. The adhesive sheet 2 and the insulating substrate 1 are provided with substantially circular through holes 4a and 4b in the center. The centers of the through-hole 4a of the adhesive sheet 2 and the through-hole 4b of the insulating substrate 1 are located on substantially the same straight line perpendicular to the metal plate 18a. That is, the central portion of the base substrate 3 is in contact with the adhesive sheet 2 and has a metal plate 18a that does not have a through hole as an inner bottom, and the inner peripheries of the through hole 4a of the adhesive sheet 2 and the through hole 4b of the insulating substrate 1 respectively. A recess 8 is formed with the surfaces 6 a and 6 b as inner peripheries and one of the through holes 4 b of the insulating substrate 1 as an opening 7.

  The base substrate 3 having the above-described structure has a pair of metal patterns 9a and 9b formed on both opposing edges on the surface side, and one of the metal patterns 9b is the edge of the insulating substrate 1 and the adhesive sheet 2 respectively. One end of the other metal pattern 9a extends to a part of the inner peripheral surface 6b of the insulating substrate 1, and the other end is connected to the insulating substrate 1 and The adhesive sheet 2 is connected to the metal plate 18a through the side surface from each edge.

  Then, the semiconductor light emitting element 14 is placed on the metal plate 18a forming the inner bottom surface 12 of the recess 8 via the conductive adhesive 13, and the lower electrode of the semiconductor light emitting element 14 and the metal plate 18a are electrically connected. Is planned. On the other hand, the upper electrode of the semiconductor light emitting element 14 is connected to the metal pattern 9b via the bonding wire 15, and electrical connection between the upper electrode of the semiconductor light emitting element 14 and the metal pattern 9b is achieved.

  Further, the semiconductor light emitting element 14 and the bonding wire 15 are resin-sealed so as to be covered with the translucent resin 16.

  Also in the present embodiment, the insulating substrate 1 and the adhesive sheet 2 exposed in the recess 8 and the translucent resin 16 are in close contact to form an interface, and a strong adhesive force between both members forming the interface. Therefore, even if a thermal stress is applied by the translucent resin 16 in a high-temperature mounting environment and in an actual use state, the action of suppressing peeling works extremely strongly.

  As a result, the translucent resin 16 does not apply a force to lift the conductive adhesive 13 and the semiconductor light emitting element 14 above the metal plate 18 a on the inner bottom surface 12 of the recess 8, and is applied to the metal plate 18 a on the inner bottom surface 12 of the recess 8. Peeling of the conductive adhesive 13 made from the metal plate 18a is suppressed, and a highly reliable semiconductor light emitting device that does not cause optical characteristic deterioration and electrical characteristic failure during mounting and long-term use is realized. be able to.

  In addition, by providing the metal plate 18a below the semiconductor light emitting element 14, the heat dissipation when the semiconductor light emitting device is mounted is improved, and the improvement of the light emission efficiency and the long life of the semiconductor light emitting element 14 can be expected.

  In any of the above embodiments, the adhesive sheet may be a resin adhesive sheet, or an insulator coated with a resin adhesive. The resin adhesive is preferably made of the same material as the sealing resin of the semiconductor light emitting element. For example, when the sealing resin is an epoxy resin, it is appropriate to use an epoxy resin adhesive. In addition, as the semiconductor light emitting element, an LED element that emits light of a desired wavelength is appropriately selected from a light emitting diode (LED) element that emits light in the ultraviolet to visible light to infrared region.

  In addition to the above-described epoxy resin, a silicone resin can be used as the sealing resin. In addition, the diffuser is mixed with the diffusing agent in the sealing resin to make it diffused light, and the phosphor that is the wavelength conversion member is mixed to emit light with a color tone different from the light emitted from the semiconductor light emitting device. It is possible to mix both the diffusing agent and the phosphor and to have both effects at the same time.

It is a perspective view which shows embodiment concerning the semiconductor light-emitting device of this invention. It is AA sectional drawing of FIG. It is a perspective view which shows other embodiment concerning the semiconductor light-emitting device of this invention. It is AA sectional drawing of FIG. It is a fragmentary sectional view which shows other embodiment concerning the semiconductor light-emitting device of this invention. It is sectional drawing which shows other embodiment concerning the semiconductor light-emitting device of this invention. It is a top view which shows the conventional semiconductor light-emitting device. It is AA sectional drawing of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1a, 1b Insulating substrate 2 Adhesive sheet 3 Base substrate 4a, 4b Through-hole 5 Inner bottom part 6a, 6b Inner peripheral surface 7 Opening 8 Recessed part 9a, 9b, 9c Metal pattern 10 Inner peripheral part 11 Inner peripheral surface 12 Inner bottom face 13 Conductive adhesive 14 Semiconductor light emitting element 15 Bonding wire 16 Translucent resin 17 Adhesive 18a, 18b Metal plate

Claims (1)

At least one semiconductor light emitting device;
A semiconductor light emitting device mounting substrate for forming an inner bottom portion of a recess for mounting the semiconductor light emitting device;
An insulating substrate having a first through-hole constituting the inner peripheral portion of the recess;
A second through-hole constituting the inner peripheral portion of the recess is provided, and a line connecting the centers of the first through-hole and the second through-hole is substantially perpendicular to the semiconductor light emitting element mounting substrate. An adhesive sheet that is disposed between the semiconductor light emitting element substrate and the insulating substrate and bonds the two substrates together,
A metal reflecting surface that covers a part of the inner peripheral portion of the recess formed by the first through hole and the second through hole;
A metal pattern that is formed on the inner bottom of the recess and mounts the semiconductor light emitting element;
A sealing resin portion for sealing the semiconductor light emitting element mounted in the recess;
A semiconductor light emitting device comprising:
The first through hole and the second through hole are formed by surfaces inclined outward at substantially the same angle with respect to a line connecting the respective centers from the second through hole toward the opening of the first through hole. Formed with a continuous surface,
At least a part of the inner peripheral surface of the second through-hole is exposed to the sealing resin portion, and two semiconductor light-emitting elements are provided symmetrically around the semiconductor light-emitting element. apparatus.

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