KR100765239B1 - Light emitting diode package using single crystal - Google Patents

Light emitting diode package using single crystal Download PDF

Info

Publication number
KR100765239B1
KR100765239B1 KR1020060096756A KR20060096756A KR100765239B1 KR 100765239 B1 KR100765239 B1 KR 100765239B1 KR 1020060096756 A KR1020060096756 A KR 1020060096756A KR 20060096756 A KR20060096756 A KR 20060096756A KR 100765239 B1 KR100765239 B1 KR 100765239B1
Authority
KR
South Korea
Prior art keywords
electrode
housing
led chip
light emitting
emitting diode
Prior art date
Application number
KR1020060096756A
Other languages
Korean (ko)
Inventor
서정후
표병기
권유진
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to KR1020060096756A priority Critical patent/KR100765239B1/en
Application granted granted Critical
Publication of KR100765239B1 publication Critical patent/KR100765239B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Led Device Packages (AREA)

Abstract

An LED(Light Emitting Diode) package is provided to reduce the size of the package itself and to improve effectively heat radiation characteristics by using a single crystal silicon structure as a housing. An LED package includes a first electrode, a second electrode, a housing and an LED chip. The first electrode(20) is made of a first conductive material. The first electrode has a first predetermined thickness. The first electrode is supplied with a power source through a first lower surface. The second electrode(30) is spaced apart from the first electrode. The second electrode has a second predetermined thickness. The second electrode is made of a second conductive material. The second electrode is supplied with the power source through a second lower surface. The housing(10) is used for isolating electrically the first and second electrodes from each other. The housing is made of a single crystal silicon material. The LED chip(40) is mounted on the second electrode. The LED chip is connected with the first electrode using wire bonding. The housing is composed of a first electrode installing portion, a second electrode installing portion and a reflective surface for reflecting the light emitted from the LED chip.

Description

단결정 실리콘 재질의 발광 다이오드 패키지{LIGHT EMITTING DIODE PACKAGE USING SINGLE CRYSTAL}LIGHT EMITTING DIODE PACKAGE USING SINGLE CRYSTAL}

도 1은 본 발명의 일실시예에 따른 발광 다이오드 패키지의 사시도.1 is a perspective view of a light emitting diode package according to an embodiment of the present invention.

도 2는 본 발명의 일실시예에 따른 발광 다이오드 패키지의 평면도.2 is a plan view of a light emitting diode package according to an embodiment of the present invention;

도 3은 본 발명의 일실시예에 따른 발광 다이오드 패키지의 A-A 단면도.Figure 3 is a cross-sectional view A-A of the LED package according to an embodiment of the present invention.

도 4는 본 발명의 일실시예에 따른 발광 다이오드 패키지의 저면도.4 is a bottom view of the LED package according to the embodiment of the present invention.

도 5는 본 발명의 일실시예에 따른 발광 다이오드 패키지의 결합 사시도.5 is a combined perspective view of a light emitting diode package according to an embodiment of the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 하우징 11 : 제 1 전극 설치부10 housing 11 first electrode mounting portion

12 : 제 2 전극 설치부의 장착부 13 : 제 2 전극 설치부의 관통구12: mounting portion of the second electrode mounting portion 13: through hole of the second electrode mounting portion

14 : 반사면 20 : 제 1 전극14 reflection surface 20 first electrode

30 : 제 2 전극 31 : 기둥30 second electrode 31 pillar

40 : LED 칩 50 : 본딩 와이어40: LED chip 50: bonding wire

본 발명은 발광 다이오드 패키지에 관한 것으로, 상세하게는 하우징의 재질을 단결정 실리콘으로 하여 식각에 의한 가공성을 향상시키고 열방출 효율을 개선한 발광 다이오드 패키지에 관한 것이다.The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package in which the material of the housing is made of single crystal silicon, thereby improving workability by etching and improving heat dissipation efficiency.

일반적으로 LED(light emitting diode) 칩을 이용하는 광원 시스템은 사용하고자 하는 용도에 따라 여러 형태의 패키지에 LED 칩을 실장하여 형성한다. In general, a light source system using a light emitting diode (LED) chip is formed by mounting an LED chip in various types of packages according to the intended use.

발광 다이오드 패키지는 많은 광량을 얻고자 구동전류를 인가할 수 있는 파워 발광 다이오드(power LED)구조를 채용하고 있는데, 이때 인가되는 높은 전류에 의해서 발생하는 열을 빠르게 방출시키는 것이 필요하다.The LED package employs a power LED structure capable of applying a driving current to obtain a large amount of light. In this case, it is necessary to quickly release heat generated by the high current applied thereto.

그러나, 종래의 발광 다이오드 패키지는 LED 칩으로부터 발생한 열을 효과적으로 방출하지 못함으로 인해 신뢰성이 저하되고 광량이 저하되는 문제점이 있다.However, the conventional LED package has a problem that the reliability is lowered and the amount of light is lowered because it does not effectively discharge the heat generated from the LED chip.

또한, 종래에는 이러한 발광 다이오드 패키지를 제작할 때 하우징의 재질을 PPA(polyphthalamide)나 세라믹을 사용하기 때문에 패키지가 LED 칩의 크기에 비하여 전체적으로 커지게 된다.In addition, conventionally, when the light emitting diode package is manufactured, the material of the housing is PPA (polyphthalamide) or ceramic, so that the package becomes larger than the size of the LED chip.

특히, PPA(polyphthalamide)의 경우 고온에서 누렇게 변색이 되고 이물이 잘 붙어 외관상으로도 문제가 있다.In particular, PPA (polyphthalamide) is yellowish discoloration at high temperature and foreign matters are also attached, there is a problem in appearance.

또한, 세라믹의 경우 변색되지는 않으나 반사 기능이 약해 빛을 잘 반사시켜 주지 못하고, 작게 만들게 되면 경도가 약해 잘 깨지고 베이크(bake)시 수축율이 매우 크기 때문에 제품을 제작하기도 어렵다.In addition, ceramics are not discolored, but the reflection function is weak, so that it does not reflect the light well, if it is made small, the hardness is weak because it is well broken and the shrinkage at the baking (bak) is very difficult to manufacture the product.

아울러, 각종 발광 다이오드 패키지에 탑재되는 LED 칩은 LED칩에서 방출되 는 열을 방출시키기 위해서 슬러그에 위에 탑재되는 경우가 일반적이다. 이러한 경우 LED칩은 슬러그에서 좌우로 개방된 상태이기 때문에 양옆으로 빛이 새어 광량 손실이 발생되는 문제점이 있다.In addition, the LED chip mounted on various LED packages is generally mounted on the slug to dissipate heat emitted from the LED chip. In this case, since the LED chip is open to the left and right in the slug, there is a problem that light loss occurs due to light leakage from both sides.

본 발명이 이루고자 하는 기술적 과제는 LED칩을 실장하는 각종 발광 소자를 제작할 때 소형화하면서도 LED칩에서 양옆으로 새는 광량을 최소화할 수 있는 발광 다이오드 패키지를 제공하는 데 있다.The present invention has been made in an effort to provide a light emitting diode package capable of minimizing the amount of light leaking from both sides of the LED chip while manufacturing various light emitting devices mounting the LED chip.

이러한 기술적 과제를 이루기 위하여, 본 발명은 일정한 두께를 가지는 도전성 재질로 하면에 전원이 공급되는 제 1 전극과, 상기 제 1 전극과 이격되어 일정한 두께를 가지는 도전성 재질로 하면에 전원이 공급되는 제 2 전극과, 상기 제 1 전극과 상기 제 2 전극을 전기적으로 분리되도록 이격하여 각 전극의 상부 표면이 노출되도록 장착하는 단결정 실리콘 재질의 하우징과, 상기 제 2 전극위에 장착되고, 상기 제 1 전극과 와이어 본딩되는 LED 칩을 포함하며, 상기 하우징은 상기 제 1 전극을 끼워 맞추기 위한 제 1 전극 설치부와, 상기 제 2 전극을 끼워 맞추기 위한 제 2 전극 설치부와, 상기 LED칩으로 방출된 광을 반사시키기 위해 하우징 상부의 둘레에 형성된 반사면을 구비하고 있는 발광 다이오드 패키지를 제공한다.In order to achieve the above technical problem, the present invention provides a first electrode to which power is supplied to a bottom surface of a conductive material having a constant thickness, and a second side of which power is supplied to a bottom surface of a conductive material having a predetermined thickness apart from the first electrode. A housing made of a single crystal silicon material mounted on the second electrode to expose an upper surface of each electrode by separating an electrode, the first electrode and the second electrode to be electrically separated from each other, and mounted on the second electrode, and the first electrode and the wire And an LED chip to be bonded, wherein the housing reflects a first electrode mounting portion for fitting the first electrode, a second electrode mounting portion for fitting the second electrode, and light emitted from the LED chip. To provide a light emitting diode package having a reflective surface formed around the upper portion of the housing.

바람직하게 상기 제 2 전극은 일정한 두께를 가지는 상부와, 그 상부로부터 분기된 다수의 기둥이 일체로 형성되며, 상기 제 2 전극 설치부는 상기 제 2 전극의 상부가 장착되는 장착부와, 상기 각 기둥이 끼워지는 관통구가 형성된다.Preferably, the second electrode has an upper portion having a constant thickness, and a plurality of pillars branched from the upper portion are integrally formed, and the second electrode mounting portion includes a mounting portion on which the upper portion of the second electrode is mounted, and each of the pillars A through hole to be fitted is formed.

바람직하게 상기 제 1 전극 설치부, 제 2 전극 설치부, 반사면은 식각 공정을 통해 형성된다.Preferably, the first electrode mounting portion, the second electrode mounting portion, and the reflective surface are formed through an etching process.

이하, 첨부한 도면들을 참조하여 본 발명의 실시예를 상세히 설명하기로 한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 본 발명의 일실시예에 따른 발광 다이오드 패키지의 사시도이고, 도 2는 평면도이고, 도 3은 단면도이고, 도 4는 저면도이다.1 is a perspective view of a light emitting diode package according to an embodiment of the present invention, Figure 2 is a plan view, Figure 3 is a cross-sectional view, Figure 4 is a bottom view.

도 1 내지 도 4를 참조하면 본 발명의 일실시예에 따른 발광 다이오드 패키지는 단결정 실리콘 재질의 하우징(10)을 구비한다.1 to 4, a light emitting diode package according to an embodiment of the present invention includes a housing 10 made of a single crystal silicon material.

하우징(10)의 상부 둘레에는 안쪽으로 오목한 형상으로 반사면이 형성되어 있다.The upper surface of the housing 10 is formed with a reflective surface concave inwardly.

하우징(10)에는 하우징(10)의 상면으로 표면이 노출된 제 1 전극(20)과 제 2 전극(30)이 구비된다.The housing 10 includes a first electrode 20 and a second electrode 30 whose surfaces are exposed to an upper surface of the housing 10.

제 1 전극(20)과 제 2 전극(30)은 전기적으로 분리되도록 약간의 간격을 두고 이격되어 하우징(10)내에 설치된다.The first electrode 20 and the second electrode 30 are spaced apart from each other so as to be electrically separated from each other and installed in the housing 10.

제 1 전극(20)과 제 2 전극(30)은 LED 칩(40)으로부터 발생한 열을 방출하는 슬러그의 기능을 수행하면서 LED 칩(40)에 전원을 공급하기 위해 열이 잘 전도되면서 도전성 재질로 이루어진다. 예를 들면, 메탈이 될 수 있다.The first electrode 20 and the second electrode 30 are made of a conductive material while conducting heat well to supply power to the LED chip 40 while functioning as a slug that emits heat generated from the LED chip 40. Is done. For example, it may be a metal.

제 1 및 제 2 전극(20, 30)은 효과적인 열방출을 위해 비교적 두껍게 형성되 며, 하우징(10)의 상면을 통해 각각 그 표면이 노출된다.The first and second electrodes 20 and 30 are formed relatively thick for effective heat dissipation, and their surfaces are exposed through the upper surface of the housing 10, respectively.

제 2 전극(30)위에 안착된 LED 칩(40)으로부터 열이 발생하면 그 열은 제 2 전극(30)을 통해 하우징(10)의 외부로 효과적으로 방출되어 진다.When heat is generated from the LED chip 40 seated on the second electrode 30, the heat is effectively discharged to the outside of the housing 10 through the second electrode 30.

제 1 및 제 2 전극(20, 30)은 두께가 비교적 두꺼움에 따라 열을 방출할 수 있는 표면적이 더 많아지게 되어 열방출이 효과적으로 이루어질 수 있다.As the first and second electrodes 20 and 30 have a relatively thick thickness, the surface area capable of dissipating heat increases, so that heat dissipation can be effectively performed.

제 2 전극(30)은 열방출을 효율적으로 하기 위하여 일정한 두께를 가지는 상부와, 그 상부로부터 분기된 다수의 기둥(31)이 일체로 형성될 수 있다. 제 2 전극(30)의 상부는 효과적인 열방출을 위해 하우징(10)의 상부로 그 표면이 노출된다.The second electrode 30 may be integrally formed with an upper portion having a constant thickness and a plurality of pillars 31 branched from the upper portion to efficiently heat dissipation. The top of the second electrode 30 has its surface exposed to the top of the housing 10 for effective heat dissipation.

제 1 전극(20) 및 제 2 전극(30)은 메탈을 이용하여 각각 제작한 후 하우징(10)에 끼워 장착될 수 도 있고, 하우징(10)에 액상 메탈을 부어 소성시켜 형성할 수 도 있다.The first electrode 20 and the second electrode 30 may be manufactured by using a metal, and then fitted into the housing 10, or may be formed by pouring a liquid metal into the housing 10 and firing the same. .

제 2 전극(30)위에는 LED칩(40)이 탑재되어 있다. LED 칩(40)은 제 2 전극(30)위에 전도성 접착제를 이용하여 부착되어 탑재될 수 있다. 제 2 전극(30)위에 탑재된 LED칩(40)과 제 1 전극(20)간에는 본딩 와이어(50)를 이용하여 와이어 본딩함으로써 전기적으로 연결된다.The LED chip 40 is mounted on the second electrode 30. The LED chip 40 may be attached and mounted on the second electrode 30 using a conductive adhesive. The LED chip 40 mounted on the second electrode 30 and the first electrode 20 are electrically connected by wire bonding using the bonding wire 50.

둘레에 반사면이 형성된 하우징(10)의 상부는 LED 칩(40)과 제 1 전극(20)간에 본딩 와이어(50)를 이용한 와이어 본딩을 통해 전기적으로 연결된 후, 투광성 수지, 예컨대 에폭시 수지 또는 실리콘으로 채워질 수 있다. 투광성 수지는 LED 칩(40)에서 방출된 광을 파장변환시키는 형광체가 함유될 수 있다. LED 칩(40)에서 방출된 광, 예컨대 청색광을 황색광으로 변환시키는 형광체가 투광성 수지 내에 함유될 수 있으며, 이에 따라 백색광을 방출하는 발광 다이오드 패키지가 제공될 수 있다.The upper part of the housing 10 having the reflective surface formed thereon is electrically connected through the wire bonding using the bonding wire 50 between the LED chip 40 and the first electrode 20, and then a translucent resin such as an epoxy resin or silicon. Can be filled with The translucent resin may contain a phosphor that wavelength-converts the light emitted from the LED chip 40. A phosphor for converting light emitted from the LED chip 40, for example, blue light into yellow light may be contained in the translucent resin, and thus a light emitting diode package may be provided that emits white light.

도 5는 본 발명의 일실시예에 따른 발광 다이오드 패키지의 결합 사시도이다.5 is a combined perspective view of a light emitting diode package according to an embodiment of the present invention.

도 5를 참조하면, 하우징(10)에는 제 1 전극(20)을 끼워 맞추기 위한 제 1 전극 설치부(11)와, 제 2 전극(30)을 끼워 맞추기 위한 제 2 전극 설치부(12,13)가 형성되어 있다.Referring to FIG. 5, the housing 10 has a first electrode mounting portion 11 for fitting the first electrode 20 and a second electrode mounting portion 12, 13 for fitting the second electrode 30. ) Is formed.

제 1 전극 설치부(11) 및 제 2 전극 설치부(12,13)의 둘레에는 LED칩(40)으로부터 방출된 광을 반사시키기 위한 반사면(14)이 형성되어 있다.Reflecting surfaces 14 for reflecting light emitted from the LED chip 40 are formed around the first electrode mounting portion 11 and the second electrode mounting portions 12 and 13.

제 2 전극(30)은 일정한 두께를 가지는 상부와, 그 상부로부터 분기된 다수의 기둥(31)이 일체로 형성된다.The second electrode 30 is integrally formed with an upper portion having a constant thickness and a plurality of pillars 31 branched from the upper portion.

이에 따라, 제 2 전극 설치부(12, 13)는 제 2 전극(30)의 상부가 장착되도록 오목하게 형성된 장착부(12)와, 제 2 전극(30)의 각 기둥(31)이 끼워지는 다수의 관통구(13)가 형성되어 있다.Accordingly, the second electrode mounting portions 12 and 13 have a plurality of mounting portions 12 recessed so that the upper portion of the second electrode 30 is mounted, and each pillar 31 of the second electrode 30 is fitted therein. The through hole 13 is formed.

제 1 전극 설치부(11)와, 제 2 전극 설치부(12,13)와, 반사면(14)은 식각 공정을 통해 형성된다.The first electrode mounting portion 11, the second electrode mounting portions 12 and 13, and the reflective surface 14 are formed through an etching process.

여기에서 제 1 전극 설치부(11)의 형상은 사각형의 형상으로 하였으나 그 형상은 얼마든지 변형이 가능하다.Here, the shape of the first electrode mounting portion 11 is a quadrangular shape, but the shape can be modified as much as possible.

따라서, 하우징(10)은 여러 단계의 식각공정을 통하여 제 1 전극 설치부(11) 와 제 2 전극 설치부(12,13)와 반사면(14)이 형성된 후 발광 다이오드 패키지의 제작을 위해 준비된다.Accordingly, the housing 10 is prepared for fabrication of the LED package after the first electrode installation part 11, the second electrode installation parts 12 and 13, and the reflective surface 14 are formed through the etching process of various steps. do.

하우징(10)이 준비되면 하우징(10)내에 제 1 전극(20)과 제 2 전극(30)을 설치한다.When the housing 10 is prepared, the first electrode 20 and the second electrode 30 are installed in the housing 10.

제 2 전극(30)위에 LED 칩(40)을 장착시킨다. 제 2 전극(30)위에 LED 칩(40)이 장착된 후 LED 칩(40)과 제 1 전극(20)을 본딩 와이어를 통해 와이어 본딩한다.The LED chip 40 is mounted on the second electrode 30. After the LED chip 40 is mounted on the second electrode 30, the LED chip 40 and the first electrode 20 are wire bonded through a bonding wire.

이상의 본 발명은 상기에 기술된 실시예에 의해 한정되지 않고, 당업자들에 의해 다양한 변형 및 변경을 가져올 수 있으며, 이는 첨부된 청구항에서 정의되는 본 발명의 취지와 범위에 포함된다.The present invention is not limited to the above described embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.

본 발명에 의한 발광 다이오드 패키지는 단결정 실리콘 재질의 하우징을 구비하고 있다. 단결정 실리콘 재질은 식각을 통하여 원하는 형상의 가공성이 뛰어나 하우징에 전극 설치부, 장착부, 관통구, 반사면등을 용이하게 형성할 수 있고, 종래에 PPA나 세라믹을 사용할 때에 비하여 발광 다이오드 패키지의 제작 크기를 훨씬 축소시킬 수 있다. 예를 들어 2㎜×2㎜ 크기의 발광 다이오드 패키지를 제작할 수 있다.The light emitting diode package according to the present invention includes a housing made of single crystal silicon. The single crystal silicon material has excellent processability in the desired shape through etching, so that the electrode mounting portion, mounting portion, through hole, reflecting surface, etc. can be easily formed in the housing. Can be reduced even more. For example, a light emitting diode package having a size of 2 mm x 2 mm can be manufactured.

이에 따라, 각종 소형 광원을 필요로 하는 정통통신 기기에서 유용한 광원으로 사용될 수 있다. Accordingly, the present invention can be used as a useful light source in orthodox communication devices requiring various small light sources.

또한, 단결정 실리콘 재질의 뛰어난 가공성에 의해 전체적인 발광 소자 패키 지의 크기가 종래의 각종 발광 다이오드 패키지에서 슬러그위에 단독으로 탑재되는 LED칩의 크기와 비교하여 커다란 차이가 나지 않기 때문에 종래의 LED칩 대신에 본 발명에 의한 발광 다이오드 패키지 자체를 탑재할 수 있다.In addition, due to the excellent processability of the single crystal silicon material, the overall size of the light emitting device package is not significantly different from that of the LED chip mounted on the slug alone in various light emitting diode packages. The light emitting diode package itself according to the invention can be mounted.

본 발명에 의한 발광 다이오드 패키지를 탑재하면 전체적인 크기가 소형임에도 불구하고 LED칩의 둘레에 반사면이 형성되어 있음에 따라 좌우로 새는 광량의 손실을 방지할 수 있다.When the light emitting diode package according to the present invention is mounted, the reflection surface is formed around the LED chip even though the overall size is small, thereby preventing the loss of the amount of light leaking from side to side.

또한 본 발명에 의하면, 발광 다이오드 패키지에서 LED 칩이 장착되는 전극을 형성할 때 전극이 열방출을 위한 슬러그의 기능을 수행하도록 비교적 두껍게 하여 형성함으로써 LED 칩으로부터 발생한 열을 효과적으로 패키지 외부로 방출시킬 수 있다.In addition, according to the present invention, when forming the electrode on which the LED chip is mounted in the LED package, the electrode is formed relatively thick so as to perform the function of slug for heat dissipation, thereby effectively dissipating heat generated from the LED chip to the outside of the package. have.

또한, 단결정 실리콘 재질은 식각에 의한 가공성뿐 아니라 열전도성이 뛰어다. 따라서, LED칩을 통하여 발생된 열이 열방출을 위한 슬러그 기능을 수행하는 각 전극 뿐만 아니라 하우징을 통하여서도 효과적으로 열이 방출될 수 있다.In addition, the single crystal silicon material is excellent in thermal conductivity as well as workability by etching. Therefore, heat generated through the LED chip can be effectively released through the housing as well as each electrode that performs the slug function for heat dissipation.

이와 같이 LED 칩으로부터 발생한 열을 효과적으로 패키지 외부로 방출시킬 수 있음에 따라 고전류의 발광 다이오드 패키지를 제작할 수 있고, 종래에 LED 칩으로부터 발생한 열을 효과적으로 방출하지 못함으로 인해 발생하였던 신뢰성 저하 및 광량 저하를 방지하여 발광 다이오드 패키지의 신뢰성을 개선할 수 있고, 광량을 개선할 수 있다.As such, since the heat generated from the LED chip can be effectively discharged to the outside of the package, a high current light emitting diode package can be manufactured, and the reliability and light quantity degradation caused by the failure to effectively discharge the heat generated from the LED chip in the past can be reduced. By preventing it can improve the reliability of the LED package, it is possible to improve the amount of light.

Claims (3)

일정한 두께를 가지는 도전성 재질로 하면에 전원이 공급되는 제 1 전극과,A first electrode to which power is supplied to a lower surface of the conductive material having a predetermined thickness; 상기 제 1 전극과 이격되어 일정한 두께를 가지는 도전성 재질로 하면에 전원이 공급되는 제 2 전극과,A second electrode supplied with power to a lower surface of the conductive material spaced apart from the first electrode; 상기 제 1 전극과 상기 제 2 전극을 전기적으로 분리되도록 이격하여 각 전극의 상부 표면이 노출되도록 장착하는 단결정 실리콘 재질의 하우징과,A housing made of a single crystal silicon material spaced apart from the first electrode and the second electrode to be electrically separated so as to expose the upper surface of each electrode; 상기 제 2 전극위에 장착되고, 상기 제 1 전극과 와이어 본딩되는 LED 칩을 포함하며,An LED chip mounted on the second electrode and wire-bonded with the first electrode, 상기 하우징은 상기 제 1 전극을 끼워 맞추기 위한 제 1 전극 설치부와, 상기 제 2 전극을 끼워 맞추기 위한 제 2 전극 설치부와, 상기 LED칩으로 방출된 광을 반사시키기 위해 하우징 상부의 둘레에 형성된 반사면을 구비하고 있는 발광 다이오드 패키지.The housing has a first electrode mounting portion for fitting the first electrode, a second electrode mounting portion for fitting the second electrode, and a peripheral portion formed around the housing to reflect light emitted from the LED chip. A light emitting diode package having a reflective surface. 청구항 1에 있어서,The method according to claim 1, 상기 제 2 전극은 일정한 두께를 가지는 상부와, 그 상부로부터 분기된 다수의 기둥이 일체로 형성되며,The second electrode is integrally formed with an upper portion having a constant thickness and a plurality of pillars branched from the upper portion, 상기 제 2 전극 설치부는 상기 제 2 전극의 상부가 장착되는 장착부와, 상기 각 기둥이 끼워지는 관통구가 형성된 발광 다이오드 패키지.The second electrode mounting portion is a light emitting diode package formed with a mounting portion to which the upper portion of the second electrode is mounted, and through holes through which the pillars are fitted. 청구항 1에 있어서,The method according to claim 1, 상기 제 1 전극 설치부, 제 2 전극 설치부, 반사면은 식각 공정을 통해 형성된 발광 다이오드 패키지.The first electrode mounting portion, the second electrode mounting portion, the reflective surface is a light emitting diode package formed through an etching process.
KR1020060096756A 2006-09-30 2006-09-30 Light emitting diode package using single crystal KR100765239B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020060096756A KR100765239B1 (en) 2006-09-30 2006-09-30 Light emitting diode package using single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060096756A KR100765239B1 (en) 2006-09-30 2006-09-30 Light emitting diode package using single crystal

Publications (1)

Publication Number Publication Date
KR100765239B1 true KR100765239B1 (en) 2007-10-09

Family

ID=39419728

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060096756A KR100765239B1 (en) 2006-09-30 2006-09-30 Light emitting diode package using single crystal

Country Status (1)

Country Link
KR (1) KR100765239B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034108B1 (en) * 2009-12-01 2011-05-13 엘지이노텍 주식회사 Light emitting device and method for fabricating thereof
KR101034114B1 (en) * 2009-12-01 2011-05-13 엘지이노텍 주식회사 Light emitting device and method for fabricating thereof
US8772816B2 (en) 2009-12-01 2014-07-08 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209763A (en) 2004-01-21 2005-08-04 Nichia Chem Ind Ltd Light-emitting device and manufacturing method therefor
KR20060069740A (en) * 2004-12-18 2006-06-22 박종만 Light emitting device
KR100643475B1 (en) 2005-09-28 2006-11-10 엘지전자 주식회사 Optical module and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209763A (en) 2004-01-21 2005-08-04 Nichia Chem Ind Ltd Light-emitting device and manufacturing method therefor
KR20060069740A (en) * 2004-12-18 2006-06-22 박종만 Light emitting device
KR100643475B1 (en) 2005-09-28 2006-11-10 엘지전자 주식회사 Optical module and manufacturing method thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034108B1 (en) * 2009-12-01 2011-05-13 엘지이노텍 주식회사 Light emitting device and method for fabricating thereof
KR101034114B1 (en) * 2009-12-01 2011-05-13 엘지이노텍 주식회사 Light emitting device and method for fabricating thereof
US8772816B2 (en) 2009-12-01 2014-07-08 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9035348B2 (en) 2009-12-01 2015-05-19 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9136453B2 (en) 2009-12-01 2015-09-15 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9461223B2 (en) 2009-12-01 2016-10-04 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9711702B2 (en) 2009-12-01 2017-07-18 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9831409B2 (en) 2009-12-01 2017-11-28 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US9978921B2 (en) 2009-12-01 2018-05-22 LG Innotek, Co. Ltd. Light emitting device and method of manufacturing the same
US10230036B2 (en) 2009-12-01 2019-03-12 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US10388840B1 (en) 2009-12-01 2019-08-20 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US10446730B2 (en) 2009-12-01 2019-10-15 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same
US10749092B2 (en) 2009-12-01 2020-08-18 Lg Innotek Co., Ltd. Light emitting device and method of manufacturing the same

Similar Documents

Publication Publication Date Title
US8044423B2 (en) Light emitting device package
KR100851183B1 (en) Semiconductor light emitting device package
KR101088910B1 (en) LED package and method of manufacturing the same
KR101252676B1 (en) Semiconductor Light Emitting Device
KR20050092300A (en) High power led package
KR20090132879A (en) Light emitting device
JP2002094122A (en) Light source and its manufacturing method
JP2004207367A (en) Light emitting diode and light emitting diode arrangement plate
KR100765239B1 (en) Light emitting diode package using single crystal
KR100817274B1 (en) Light emitting diode package and method of manufacturing the same
JP5936885B2 (en) Semiconductor light emitting device
KR20080005851A (en) Light-emitting device
KR20120001189A (en) Light emitting diode package
KR101121728B1 (en) Led package with heat radiating structure
KR100803161B1 (en) Light emitting diode package using single crystal and light emitting device thereof
CN109698263B (en) Packaging substrate, semiconductor device and manufacturing method thereof
WO2020116452A1 (en) Optical semiconductor device
KR100634303B1 (en) Light emitting diode
KR20090103292A (en) Light emitting diode package
KR100878398B1 (en) High power led package and fabrication method thereof
KR20130080299A (en) Light emitting device package, back light unit and display unit
JP7512012B2 (en) Optical semiconductor device
JP6038528B2 (en) Light emitting device
KR100785450B1 (en) Side-view light emitting diode package
KR100963890B1 (en) Light emitting diode having wire connection terminal

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120917

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20130911

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20140912

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20150902

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20160907

Year of fee payment: 10