JP2002217459A - Light-emitting diode, and backlight device of liquid crystal display using the light-emitting diode as light source - Google Patents

Light-emitting diode, and backlight device of liquid crystal display using the light-emitting diode as light source

Info

Publication number
JP2002217459A
JP2002217459A JP2001007434A JP2001007434A JP2002217459A JP 2002217459 A JP2002217459 A JP 2002217459A JP 2001007434 A JP2001007434 A JP 2001007434A JP 2001007434 A JP2001007434 A JP 2001007434A JP 2002217459 A JP2002217459 A JP 2002217459A
Authority
JP
Japan
Prior art keywords
light
emitting diode
led chip
light emitting
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001007434A
Other languages
Japanese (ja)
Inventor
Yasumasa Morita
康正 森田
Toshiaki Nagano
利明 永野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2001007434A priority Critical patent/JP2002217459A/en
Publication of JP2002217459A publication Critical patent/JP2002217459A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting diode which can efficiently extract the light emitted from a LED chip from a light-emitting surface, and also to provide a backlight device using the same. SOLUTION: The LED chip 4 is electrically connected by flip-chip bonding to a pair of external electrodes 3 on a substrate 2 via bumps 5. On the substrate 2, whereon the LED chip 4 is flip-chip bonded, a lamp house 6, having a through- hole 6a surrounding the LED chip 4 is provided. The through-hole 6a is filled with a molding resin 8. By controlling the height and tilt angle of the through- hole 6a of the lamp house 6, the directional characteristics of the light emitting diode 1 can be controlled.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ノート型パソコ
ン、携帯電話等の液晶表示部のバックライト装置用の光
源として用いられる発光ダイオード及びこの発光ダイオ
ードを導光板の端部に配設して構成したバックライト装
置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode used as a light source for a backlight device of a liquid crystal display section of a notebook personal computer, a portable telephone, or the like, and the light emitting diode is arranged at an end of a light guide plate. And a backlight device.

【0002】[0002]

【従来の技術】従来、この種のバックライト装置用の光
源として、導光板の端面に冷陰極蛍光管(CFL)やエ
レクトロルミネッセンス(EL)素子を配設したものが
用いられていた。しかし、CFLやEL素子を光源とし
て用いたものはインバータ等の点灯回路を必要とするた
め全体として大型化するなどの問題があった。
2. Description of the Related Art Heretofore, as a light source for a backlight device of this type, a light guide plate provided with a cold cathode fluorescent tube (CFL) or an electroluminescent (EL) element on an end face has been used. However, a device using a CFL or EL element as a light source requires a lighting circuit such as an inverter, and thus has a problem in that the overall size is increased.

【0003】そこで、小型で長寿命且つ低消費電力とい
う特徴を有する発光ダイオードを光源として利用したバ
ックライト装置が提案されている。この種バックライト
装置に用いられる発光ダイオード90は、例えば図5乃
至図6に示すように構成されており、図5(a)は平面
図、(b)は垂直断面図、図6はこの発光ダイオード9
0をバックライト装置の光源として用いる際にプリント
基板96上に実装した状態を示す斜視図である。
[0003] Therefore, there has been proposed a backlight device using a light emitting diode having a feature of being small in size, having a long service life and low power consumption as a light source. The light emitting diode 90 used in this type of backlight device is configured as shown in, for example, FIGS. 5 and 6, FIG. 5 (a) is a plan view, FIG. 5 (b) is a vertical sectional view, and FIG. Diode 9
FIG. 9 is a perspective view showing a state where the light emitting device is mounted on a printed circuit board 96 when 0 is used as a light source of a backlight device.

【0004】図5に示す発光ダイオード90は、一対の
外部電極を成す電極パターンが適宜形成された板状の絶
縁性基板93上にLEDチップ91を固着し、該LED
チップ91の電極と絶縁性基板93上の電極パターンと
が金線等のワイヤ92によって電気的に接続されてい
る。また、LEDチップ91が載置された基板93上は
略半円筒状のモールド樹脂94によって封止されてい
る。
A light emitting diode 90 shown in FIG. 5 has an LED chip 91 fixed on a plate-like insulating substrate 93 on which an electrode pattern forming a pair of external electrodes is appropriately formed.
The electrodes of the chip 91 and the electrode patterns on the insulating substrate 93 are electrically connected by wires 92 such as gold wires. The substrate 93 on which the LED chip 91 is mounted is sealed with a substantially semi-cylindrical mold resin 94.

【0005】このとき、フルカラー表示を行う液晶表示
部のバックライト装置用の光源として、発光ダイオード
90には白色発光が求められるため、LEDチップ91
として、例えばGaN、GaAlN、InGaN、In
GaAlN等の窒化物系化合物半導体やZnSe(セレ
ン化亜鉛)等で発光層を形成し、380nm〜500n
mの青色系で発光する素子を用い、このLEDチップ9
1全体を封止するモールド樹脂94として、エポキシ樹
脂にガーネット構造を有するイットリウム・アルミン酸
塩系の蛍光体を均一に分散させたものを用いている。こ
れによって、LEDチップ91から放出された青色系の
光の一部を前記蛍光体が吸収して、LEDチップ91の
青色系の光の波長より長い波長の光(黄橙色系)に変換
し、この蛍光体によって波長変換された黄橙色系の光と
前記LEDチップ91からの青色系の光とが混合されて
白色の光となり、この混合した白色光が外部に放出され
るものである。この発光ダイオード90の発光スペクト
ルを示すものが図8であり、470nm付近にピークを
有する青色系の光と570nm付近にピークを有する黄
橙色系の光との混色によって白色光が得られるものであ
る。
At this time, since the light emitting diode 90 is required to emit white light as a light source for a backlight device of a liquid crystal display portion for performing full color display, an LED chip 91 is required.
For example, GaN, GaAlN, InGaN, In
A light-emitting layer is formed from a nitride-based compound semiconductor such as GaAlN, ZnSe (zinc selenide), or the like.
m, which emits blue light, and this LED chip 9
As the mold resin 94 for sealing the entire structure, a resin in which an yttrium / aluminate phosphor having a garnet structure is uniformly dispersed in an epoxy resin is used. As a result, the phosphor absorbs a part of the blue light emitted from the LED chip 91 and converts it into light (yellow-orange) having a wavelength longer than the wavelength of the blue light of the LED chip 91, The yellow-orange light converted in wavelength by the phosphor and the blue light from the LED chip 91 are mixed into white light, and the mixed white light is emitted to the outside. FIG. 8 shows an emission spectrum of the light-emitting diode 90, in which white light is obtained by mixing color of blue light having a peak near 470 nm and yellow-orange light having a peak near 570 nm. .

【0006】次に、発光ダイオード90の製造方法とし
ては、まず、各発光ダイオード90に対応する複数の電
極パターンが形成された基板93上に複数のLEDチッ
プ91をダイボンドし、該LEDチップ91の電極と絶
縁性基板93上の電極パターンとを金線等のワイヤ92
によって電気的に接続する。そして、LEDチップ91
が載置された基板93上をトランスファーモールド等に
より前記蛍光体が均一に分散されたモールド樹脂94を
略半円筒状に硬化させ封止する。その後、基板93を切
断し、個々の発光ダイオード90が形成されるものであ
る。
Next, as a method of manufacturing the light emitting diode 90, first, a plurality of LED chips 91 are die-bonded on a substrate 93 on which a plurality of electrode patterns corresponding to each light emitting diode 90 are formed. The electrodes and the electrode pattern on the insulating substrate 93 are connected to wires 92 such as gold wires.
To make an electrical connection. Then, the LED chip 91
The mold resin 94 in which the phosphor is uniformly dispersed is hardened into a substantially semi-cylindrical shape by transfer molding or the like on the substrate 93 on which is mounted, and is sealed. Thereafter, the substrate 93 is cut, and individual light emitting diodes 90 are formed.

【0007】こうして形成された発光ダイオード90
は、図6に示すようにプリント基板96上に基板93が
垂直な向き即ち発光方向をプリント基板96の向きと水
平になるようにして置かれ、発光ダイオード90の基板
93の外部電極パターンとプリント基板96上の配線パ
ターンとが半田付け95されて電気的な接続が図られる
と共に固定される。そして、図7に示すように、発光ダ
イオード90が実装されたプリント基板96上に、発光
ダイオード90のモールド樹脂94が嵌め込まれる半円
筒型に窪んだ凹部97aが端面に形成された導光板97
を載せ、その上にフレーム98によって支持された液晶
表示器99を載せて液晶表示部100が組み立てられ
る。なお、特に図示していないが、導光板97は例えば
アクリル樹脂等の透光性材料によって形成され、上面に
は均一な面発光を得るために適宜拡散処理が施されてお
り、下面には内面反射率を高め効率良く発光面へ光を導
くために適宜反射部材が設けられたりしている。
The light emitting diode 90 thus formed
As shown in FIG. 6, the substrate 93 is placed on a printed circuit board 96 such that the substrate 93 has a vertical direction, that is, the light emitting direction is horizontal to the direction of the printed circuit board 96, and the external electrode pattern of the substrate 93 of the light emitting diode 90 is printed. The wiring pattern on the substrate 96 is soldered 95 so that electrical connection is achieved and fixed. Then, as shown in FIG. 7, on a printed circuit board 96 on which the light emitting diode 90 is mounted, a light guide plate 97 having a semicylindrical recess 97a formed on an end face in which a molding resin 94 of the light emitting diode 90 is fitted.
, And a liquid crystal display 99 supported by a frame 98 is mounted thereon to assemble a liquid crystal display unit 100. Although not particularly shown, the light guide plate 97 is formed of a translucent material such as an acrylic resin, and the upper surface is appropriately diffused to obtain uniform surface light emission. In order to increase the reflectance and efficiently guide the light to the light emitting surface, an appropriate reflecting member is provided.

【0008】以上のように従来の液晶表示部100は構
成されており、発光ダイオード90からの光は凹部97
aから導光板97内に進入し、該導光板97の下面の反
射部材によって反射し、または導光板97の上面に直接
入射し、導光板上面に施された拡散処理によって拡散さ
れて均一に面発光し、液晶表示器99を背面から照明し
て液晶表示部100に表示を行うものである。
As described above, the conventional liquid crystal display unit 100 is configured, and the light from the light emitting diode 90 is transmitted through the recess 97.
a, the light enters the light guide plate 97, is reflected by the reflection member on the lower surface of the light guide plate 97, or is directly incident on the upper surface of the light guide plate 97, and is diffused by the diffusion processing performed on the upper surface of the light guide plate 97 to be uniformly spread. It emits light and illuminates the liquid crystal display 99 from behind to display on the liquid crystal display unit 100.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、こうし
た従来の発光ダイオード90は、複数のLEDチップ9
1を載せ樹脂モールドした基板93を切断する方法によ
って個々の発光ダイオード90が製造されるものである
ため、モールド樹脂94の導光板97端面と接してない
側面(切断面)から光が漏れてしまい発光効率が悪いと
いった問題があった。また、発光ダイオード90の指向
性を制御するには、レンズ形状(モールド樹脂94の形
状)の変更が必要であり、金型の変更などにコストや手
間がかかるといった問題があった。さらに、近年こうし
た携帯電話等の液晶表示部100には、薄型化、高輝度
化が求められており、液晶表示部100を薄型化するた
めには、導光板97をより薄型にする必要があり、従来
の発光ダイオード90ではさらに発光効率が低下してし
まい、液晶表示部の高輝度化のためには発光ダイオード
90の数を増やすことが避けられず、コストアップの要
因となってしまっており、こうした問題の解決が課題と
されるものとなっていた。
However, such a conventional light emitting diode 90 requires a plurality of LED chips 9.
Since the individual light emitting diodes 90 are manufactured by a method of cutting the resin-molded substrate 93 on which 1 is mounted, light leaks from the side surface (cut surface) of the mold resin 94 which is not in contact with the end surface of the light guide plate 97. There is a problem that luminous efficiency is poor. In addition, in order to control the directivity of the light emitting diode 90, it is necessary to change the lens shape (the shape of the mold resin 94), and there is a problem that changing the mold requires cost and labor. Further, in recent years, the liquid crystal display unit 100 of such a mobile phone has been required to be thinner and have higher luminance. In order to make the liquid crystal display unit 100 thinner, it is necessary to make the light guide plate 97 thinner. However, in the conventional light emitting diode 90, the luminous efficiency is further reduced, and it is inevitable to increase the number of the light emitting diodes 90 in order to increase the brightness of the liquid crystal display unit, which is a factor of cost increase. However, solving these problems has been an issue.

【0010】[0010]

【課題を解決するための手段】本発明は上記した従来の
課題を解決するための具体的手段として、LEDチップ
と、該LEDチップの電極に各々接続された一対の外部
電極が形成された基板と、前記LEDチップの発光面上
を覆うモールド樹脂とを備えた発光ダイオードにおい
て、前記LEDチップは前記基板上の一対の外部電極に
バンプを介してフリップチップボンディングによって電
気的に接続されると共に、前記LEDチップがフリップ
チップボンディングされた基板上に、前記LEDチップ
の周囲を包囲する貫通孔を有するランプハウスを取り付
け、該貫通孔内に前記モールド樹脂が充填されているこ
とを特徴とする発光ダイオードを提供することで課題を
解決するものである。
According to the present invention, as a specific means for solving the above-mentioned conventional problems, there is provided a substrate on which an LED chip and a pair of external electrodes respectively connected to electrodes of the LED chip are formed. And a mold resin covering a light emitting surface of the LED chip, wherein the LED chip is electrically connected to a pair of external electrodes on the substrate by flip chip bonding via bumps, A light emitting diode, wherein a lamp house having a through hole surrounding the periphery of the LED chip is mounted on a substrate to which the LED chip is flip-chip bonded, and the through hole is filled with the molding resin. Is to solve the problem.

【0011】[0011]

【発明の実施の形態】次に本発明を図に示す実施形態に
基づいて詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail based on an embodiment shown in the drawings.

【0012】図1乃至図2は本発明に係る発光ダイオー
ド1の第一実施形態を示しており、図1は垂直断面図、
図2は平面図を示している。この発光ダイオード1は、
板状の絶縁性基板2上に一対の外部電極を成す電極パタ
ーン3が形成され、この電極パターン3上にLEDチッ
プ4が固着されている。LEDチップ4は、裏面側に正
負一対の電極を有していて、これら電極部のそれぞれを
前記基板2上の電極パターン3の一対の外部電極のそれ
ぞれに、Auバンプ、はんだバンプ等のバンプ5を介し
て電気的に接続されていて、所謂フリップチップボンデ
ィングされている。このとき、LEDチップ4の材質と
しては、例えばGaN、GaAlN、InGaN、In
GaAlN等の窒化物系化合物半導体やZnSe(セレ
ン化亜鉛)等で発光層を形成し、380nm〜500n
mの青色系で発光する素子が用いられる。
FIGS. 1 and 2 show a first embodiment of a light emitting diode 1 according to the present invention. FIG.
FIG. 2 shows a plan view. This light emitting diode 1
An electrode pattern 3 forming a pair of external electrodes is formed on a plate-shaped insulating substrate 2, and an LED chip 4 is fixed on the electrode pattern 3. The LED chip 4 has a pair of positive and negative electrodes on the back side, and each of these electrode portions is connected to each of a pair of external electrodes of the electrode pattern 3 on the substrate 2 by a bump 5 such as an Au bump or a solder bump. And is so-called flip-chip bonded. At this time, the material of the LED chip 4 is, for example, GaN, GaAlN, InGaN, InGaN, or the like.
A light-emitting layer is formed from a nitride-based compound semiconductor such as GaAlN, ZnSe (zinc selenide), or the like.
m, a device that emits blue light.

【0013】さらに、こうしてLEDチップ4がフリッ
プチップボンディングされた基板2上にランプハウス6
が接着剤7によって接着されて設けられている。このと
きランプハウス6には、図2に示すように水平断面形状
が略楕円形状の貫通孔6aが形成されており、この貫通
孔6a内にLEDチップ4が収まるようになっている。
このとき貫通孔6aは、図1に示すように上面から下面
に向かって開口径が小さくなるように内面に傾斜が付け
られており、LEDチップ4から貫通孔6aの内面に向
かって出射された光をこの内面で反射させて上方に出力
させることで、LEDチップ4から出射された光を効率
良く出射面から取り出すことができるようになってい
る。
Further, the lamp house 6 is placed on the substrate 2 on which the LED chip 4 is flip-chip bonded.
Are provided by bonding with an adhesive 7. At this time, a through hole 6a having a substantially elliptical horizontal cross section is formed in the lamp house 6, as shown in FIG. 2, and the LED chip 4 is accommodated in the through hole 6a.
At this time, as shown in FIG. 1, the through hole 6a has an inner surface inclined so that the opening diameter decreases from the upper surface to the lower surface, and the light is emitted from the LED chip 4 toward the inner surface of the through hole 6a. By reflecting the light on the inner surface and outputting the light upward, the light emitted from the LED chip 4 can be efficiently extracted from the emission surface.

【0014】ランプハウス6の材質としては、LEDチ
ップ4からの光の反射率が高く、耐熱性に優れ、形成が
容易なものが望ましく、例えば、ポリフタルアミド(商
標名アモデル)等のナイロン系の樹脂や商標名ベクトラ
等の各種液晶ポリマー等の熱可塑性樹脂が用いられる。
また、必要に応じてシリカ、酸化チタンなどの各種セラ
ミックやガラス繊維などを50wt%程度配合すること
で、荷重たわみ温度が240℃以上の高い耐熱性を有す
るものが得られる。さらに、ランプハウス6の貫通孔6
aの内面には、Al、Ag、Wなどの金属やTiO
の金属酸化物などの高反射率材料よりなる被膜を形成し
たり、白色顔料を塗布する等によってLEDチップ4か
らの光の反射率が高められる処理を施すことができる。
The material of the lamp house 6 is desirably a material having a high reflectance of light from the LED chip 4, excellent heat resistance, and easy to form. For example, nylon-based materials such as polyphthalamide (trade name: Amodel) And thermoplastic resins such as various liquid crystal polymers such as Vectra (trade name).
If necessary, various ceramics such as silica and titanium oxide, glass fibers, and the like are blended in an amount of about 50 wt%, whereby a material having a high heat resistance of a deflection temperature under load of 240 ° C. or higher can be obtained. Furthermore, the through hole 6 of the lamp house 6
On the inner surface of a, a film made of a high-reflectance material such as a metal such as Al, Ag and W or a metal oxide such as TiO 2 is formed, or the light from the LED chip 4 is coated by applying a white pigment. Processing for increasing the reflectance can be performed.

【0015】そして、その後、エポキシ樹脂等にガーネ
ット構造を有するイットリウム・アルミン酸塩系の蛍光
体を均一に分散させたモールド樹脂8を基板2上に接着
されたランプハウス6の貫通孔6a内に注入して、LE
Dチップ4の周囲を全てモールド樹脂8で封止し、この
モールド樹脂8を硬化して蛍光体を固定し、発光ダイオ
ード1が構成されるものである。これによって、LED
チップ4から放出された青色系の光の一部を前記蛍光体
が吸収して、LEDチップ4の青色系の光の波長より長
い波長の光(黄橙色系)に変換し、この蛍光体によって
波長変換された黄橙色系の光と前記LEDチップ4から
の青色系の光とが混合されて白色の光となり、この混合
した白色光が直接またはランプハウス6の貫通孔6aの
内面によって反射されて出射面より外部に放出されるも
のである。
Then, a mold resin 8 in which an yttrium-aluminate-based phosphor having a garnet structure is uniformly dispersed in an epoxy resin or the like is placed in a through hole 6a of a lamp house 6 bonded to the substrate 2. Inject and LE
The entire periphery of the D chip 4 is sealed with a mold resin 8, and the mold resin 8 is cured to fix the phosphor, thereby forming the light emitting diode 1. By this, LED
The phosphor absorbs a part of the blue light emitted from the chip 4 and converts it into light (yellow orange) having a wavelength longer than the wavelength of the blue light of the LED chip 4. The wavelength-converted yellow-orange light and the blue light from the LED chip 4 are mixed to form white light, and the mixed white light is reflected directly or by the inner surface of the through hole 6a of the lamp house 6. And is emitted from the emission surface to the outside.

【0016】こうして形成された発光ダイオード1は、
図3に示すようにプリント基板9上に発光ダイオード1
の基板2が垂直な向き即ち発光方向をプリント基板9の
向きと水平になるようにして置かれ、発光ダイオード1
の基板2の外部電極パターン3とプリント基板9上の配
線パターンとが半田付けされて電気的な接続が図られる
と共に固定される。そして、発光ダイオード1が実装さ
れたプリント基板9上に導光板10を載せて、バックラ
イト装置11が組み立てられる。さらに、その上に図示
しない液晶表示器を載せて液晶表示部が組み立てられ
る。なお、特に図示していないが、導光板10は例えば
アクリル樹脂等の透光性材料によって薄い板状に形成さ
れ、上面には均一な面発光を得るために拡散処理が施さ
れたり、下面には内面反射率を高め効率よく発光面へ光
を導くために反射部材等が適宜設けられたりしている。
The light emitting diode 1 thus formed is
As shown in FIG.
The substrate 2 is placed so that the vertical direction, that is, the light emitting direction is horizontal to the direction of the printed circuit board 9, and the light emitting diode 1
The external electrode pattern 3 of the substrate 2 and the wiring pattern on the printed circuit board 9 are soldered to achieve electrical connection and are fixed. Then, the light guide plate 10 is mounted on the printed board 9 on which the light emitting diodes 1 are mounted, and the backlight device 11 is assembled. Further, a liquid crystal display (not shown) is mounted thereon to assemble a liquid crystal display. Although not specifically shown, the light guide plate 10 is formed in a thin plate shape with a light-transmitting material such as an acrylic resin, and the upper surface is subjected to a diffusion process to obtain uniform surface light emission, or the lower surface is subjected to a diffusion process. In order to increase the internal reflectivity and efficiently guide light to the light emitting surface, a reflecting member or the like is appropriately provided.

【0017】このとき、発光ダイオード1の光出射面は
導光板10の端面と平行に近接しており、発光ダイオー
ド1の高さは導光板10端面の垂直方向長さ(厚み)に
合わせて略同じ長さで形成されている。即ち、発光ダイ
オード1のランプハウス6を導光板10端面の垂直方向
長さに合わせて断面横長の直方体形状に形成し、これに
合わせ貫通孔6aは、短軸が導光板10端面の垂直方向
に沿って、長軸が導光板10端面の水平方向に沿って横
長の楕円形状に形成されている。なお、当然ながら、基
板2もこれに合わせて横長の長方形状に形成されるもの
である。
At this time, the light emitting surface of the light emitting diode 1 is parallel and close to the end face of the light guide plate 10, and the height of the light emitting diode 1 is substantially equal to the vertical length (thickness) of the end face of the light guide plate 10. It is formed with the same length. That is, the lamp house 6 of the light-emitting diode 1 is formed in a rectangular parallelepiped shape having a horizontally long cross section in accordance with the vertical length of the end face of the light guide plate 10. Along the long axis, a long axis is formed in a horizontally long elliptical shape along the horizontal direction of the end surface of the light guide plate 10. The substrate 2 is naturally formed in a horizontally long rectangular shape in accordance with this.

【0018】以上のように発光ダイオード1が形成され
ることによって、ランプハウス6の貫通孔6aの高さや
傾斜角度を制御することによって、発光ダイオード1の
指向特性を制御することができ、バックライト装置を設
計する上での自由度が増すだけでなく、従来の発光ダイ
オードの問題点であった導光板端面と接してない側面
(切断面)からの光漏れを防止でき、バックライト装置
の光量を高めることができるものである。
By forming the light-emitting diode 1 as described above, the directional characteristics of the light-emitting diode 1 can be controlled by controlling the height and the inclination angle of the through hole 6a of the lamp house 6. This not only increases the degree of freedom in designing the device, but also prevents light leakage from the side (cut surface) that is not in contact with the end surface of the light guide plate, which was a problem of the conventional light emitting diode, and the light intensity of the backlight device Can be enhanced.

【0019】また、LEDチップ4が基板2上にフリッ
プチップボンディングされた構造であるため、従来のワ
イヤボンディングされた構造に比べて光の取り出し効率
は向上し、また、樹脂モールド時におけるワイヤー切断
による発光ダイオードの不点灯事故も防止できるもので
ある。
Further, since the LED chip 4 has a structure in which the LED chip 4 is flip-chip bonded on the substrate 2, the light extraction efficiency is improved as compared with the conventional wire-bonded structure, and the wire is cut off during resin molding. It is also possible to prevent a light emitting diode from being turned off accidentally.

【0020】さらに、こうして液晶表示部全体が構成さ
れることで、発光ダイオード1から出射した光は導光板
10の端面から導光板10内に進入し、該導光板10の
下面の反射部材によって反射し、または導光板10の上
面に直接入射し、導光板10上面に施された拡散処理に
よって拡散されて均一に面発光し、液晶表示器を背面か
ら照明して液晶表示部に表示を行うものである。
Further, by configuring the entire liquid crystal display section in this way, light emitted from the light emitting diode 1 enters the light guide plate 10 from the end face of the light guide plate 10 and is reflected by the reflection member on the lower surface of the light guide plate 10. Or directly incident on the upper surface of the light guide plate 10 and diffused by a diffusion process performed on the upper surface of the light guide plate 10 to uniformly emit light, and illuminate the liquid crystal display from behind to perform display on the liquid crystal display unit. It is.

【0021】なお、上記実施形態では、発光ダイオード
1のモールド樹脂8に分散する蛍光体としてはガーネッ
ト構造を有するイットリウム・アルミン酸塩系の蛍光体
を用いているが、特に不活剤としてセリウム(Ce)及
びプラセオジウム(Pr)をドープした蛍光体を用いれ
ば、図4に示す発光スペクトルのグラフのように610
nmと630nm付近に新たなピークが出現し、赤色領
域の発光が増加することで演色性の良好な白色発光ダイ
オードが得られる。このことは、フルカラー液晶表示部
のバックライト装置用の光源として用いる場合、従来の
白色発光ダイオードでは、図8に示したように600n
m以上の赤色領域の発光が少なくこれによって暗く暖か
みのない表示として観測されていたものを、赤色領域の
光を増加することで明るく暖かみのある白色発光が得ら
れるというものである。
In the above embodiment, the phosphor dispersed in the mold resin 8 of the light emitting diode 1 is an yttrium / aluminate phosphor having a garnet structure. When a phosphor doped with Ce) and praseodymium (Pr) is used, 610 is obtained as shown in the graph of the emission spectrum shown in FIG.
New peaks appear in the vicinity of nm and 630 nm, and the emission in the red region increases, whereby a white light emitting diode having good color rendering properties can be obtained. This means that, when used as a light source for a backlight device of a full-color liquid crystal display unit, a conventional white light emitting diode has 600 n as shown in FIG.
In this case, bright and warm white light emission can be obtained by increasing the light in the red region from what was observed as a dark and warm display with little light emission in the red region of m or more.

【0022】また、上記実施形態では、青色系のLED
チップと蛍光体とを用い白色に発光する発光ダイオード
を例にとって説明してきたが、本発明はこれについては
限定されず、液晶表示部のバックライト装置用の光源と
して求められる発光色によって、他の色に発光するLE
Dチップと蛍光体とを適宜組み合わせて混色発光する発
光ダイオードでも良く、また、LEDチップが求められ
る色に発光するものであれば、蛍光体はモールド樹脂に
混入しなくても良い。
In the above embodiment, the blue LED
Although a light-emitting diode that emits white light using a chip and a phosphor has been described as an example, the present invention is not limited to this, and other light-emitting colors required as a light source for a backlight device of a liquid crystal display unit may be used. LE that emits color
A light emitting diode that emits mixed colors by appropriately combining a D chip and a phosphor may be used, and the phosphor does not need to be mixed into the mold resin as long as the LED chip emits light of a required color.

【0023】また、上記実施形態では、発光ダイオード
1のランプハウス6の貫通孔を略楕円形状として説明し
てきたが、本発明はこれについても限定されず、導光板
の厚みや大きさによっては円形や方形であっても良い。
In the above embodiment, the through hole of the lamp house 6 of the light emitting diode 1 has been described as having a substantially elliptical shape. However, the present invention is not limited to this, and may be circular depending on the thickness and size of the light guide plate. It may be square or rectangular.

【0024】また、バックライト装置11に用いる発光
ダイオード1の数も液晶表示部の大きさに応じて適宜選
択されるものであり、上記実施形態に限定されるもので
はない。
The number of the light emitting diodes 1 used in the backlight device 11 is also appropriately selected according to the size of the liquid crystal display unit, and is not limited to the above embodiment.

【0025】[0025]

【発明の効果】以上説明したように本発明によれば、L
EDチップは基板上の一対の外部電極にバンプを介して
フリップチップボンディングによって電気的に接続され
ると共に、前記LEDチップがフリップチップボンディ
ングされた基板上に、前記LEDチップの周囲を包囲す
る貫通孔を有するランプハウスを取り付け、該貫通孔内
に樹脂が充填されている発光ダイオードとしたことで、
ランプハウスの貫通孔の高さや傾斜角度を制御すること
によって、発光ダイオードの指向特性を制御することが
でき、バックライト装置を設計する上での自由度が増す
だけでなく、従来の発光ダイオードの問題点であった導
光板端面と接してない側面(切断面)からの光漏れを防
止でき、バックライト装置の光量を高めることができ
る。また、LEDチップが基板上にフリップチップボン
ディングされた構造であるため、従来のワイヤボンディ
ングされた構造に比べて光の取り出し効率は向上すると
共に、樹脂モールド時におけるワイヤー切断による発光
ダイオードの不点灯事故も防止できるものである。
As described above, according to the present invention, L
The ED chip is electrically connected to a pair of external electrodes on the substrate by flip chip bonding via bumps, and a through hole surrounding the LED chip is provided on the substrate on which the LED chip is flip chip bonded. By attaching a lamp house having a light emitting diode in which the resin is filled in the through hole,
By controlling the height and inclination angle of the through hole in the lamp house, the directional characteristics of the light emitting diode can be controlled, which not only increases the degree of freedom in designing a backlight device, but also increases the Light leakage from a side surface (cut surface) that is not in contact with the end surface of the light guide plate, which is a problem, can be prevented, and the amount of light of the backlight device can be increased. In addition, because the LED chip is flip-chip bonded on the substrate, the light extraction efficiency is improved as compared with the conventional wire-bonded structure, and the light-emitting diode is turned off due to wire cutting during resin molding. Can also be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る発光ダイオードの第一実施形態を
示す断面図である。
FIG. 1 is a sectional view showing a first embodiment of a light emitting diode according to the present invention.

【図2】本発明に係る発光ダイオードの第一実施形態を
示す平面図である。
FIG. 2 is a plan view showing a first embodiment of a light emitting diode according to the present invention.

【図3】本発明に係る発光ダイオードを用いたバックラ
イト装置を示す平面図である。
FIG. 3 is a plan view showing a backlight device using a light emitting diode according to the present invention.

【図4】本発明に係る発光ダイオードの発光スペクトル
を示すグラフである。
FIG. 4 is a graph showing an emission spectrum of the light emitting diode according to the present invention.

【図5】従来例における発光ダイオードを示す説明図で
あり、(a)は平面図、(b)は断面図である。
5A and 5B are explanatory views showing a light emitting diode in a conventional example, where FIG. 5A is a plan view and FIG. 5B is a cross-sectional view.

【図6】従来例における発光ダイオードをプリント基板
上に実装した状態を示す斜視図である。
FIG. 6 is a perspective view showing a state in which a light emitting diode in a conventional example is mounted on a printed circuit board.

【図7】従来例における発光ダイオードを用いたバック
ライト装置を示す平面図である。
FIG. 7 is a plan view showing a conventional backlight device using light emitting diodes.

【図8】従来例における発光ダイオードの発光スペクト
ルを示すグラフである。
FIG. 8 is a graph showing an emission spectrum of a light emitting diode in a conventional example.

【符号の説明】[Explanation of symbols]

1……発光ダイオード 2……基板 3……電極パターン 4……LEDチップ 5……バンプ 6……ランプハウス 6a……貫通孔 7……接着剤 8……モールド樹脂 9……プリント基板 10……導光板 11……バックライト装置 DESCRIPTION OF SYMBOLS 1 ... Light emitting diode 2 ... Substrate 3 ... Electrode pattern 4 ... LED chip 5 ... Bump 6 ... Lamp house 6a ... Through-hole 7 ... Adhesive 8 ... Mold resin 9 ... Printed circuit board 10 ... ... Light guide plate 11 ... Backlight device

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) // F21Y 101:02 F21Y 101:02 Fターム(参考) 2H091 FA23Z FA45Z FB02 LA09 LA16 4M109 AA01 BA03 CA21 DB14 EB18 GA01 5F041 AA04 AA06 AA14 CA34 CA40 CA43 DA09 DA20 DA43 DA74 DA75 DA78 DB09 EE25 FF11──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI theme coat ゛ (reference) // F21Y 101: 02 F21Y 101: 02 F-term (reference) 2H091 FA23Z FA45Z FB02 LA09 LA16 4M109 AA01 BA03 CA21 DB14 EB18 GA01 5F041 AA04 AA06 AA14 CA34 CA40 CA43 DA09 DA20 DA43 DA74 DA75 DA78 DB09 EE25 FF11

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】LEDチップと、該LEDチップの電極に
各々接続された一対の外部電極が形成された基板と、前
記LEDチップの発光面上を覆うモールド樹脂とを備え
た発光ダイオードにおいて、前記LEDチップは前記基
板上の一対の外部電極にバンプを介してフリップチップ
ボンディングによって電気的に接続されると共に、前記
LEDチップがフリップチップボンディングされた基板
上に、前記LEDチップの周囲を包囲する貫通孔を有す
るランプハウスを取り付け、該貫通孔内に前記モールド
樹脂が充填されていることを特徴とする発光ダイオー
ド。
1. A light emitting diode comprising: an LED chip; a substrate on which a pair of external electrodes connected to electrodes of the LED chip are formed; and a mold resin covering a light emitting surface of the LED chip. The LED chip is electrically connected to the pair of external electrodes on the substrate by flip chip bonding via bumps, and the LED chip is provided on the substrate to which the LED chip is flip chip bonded and surrounds the periphery of the LED chip. A light emitting diode, wherein a lamp house having a hole is attached, and the mold resin is filled in the through hole.
【請求項2】前記LEDチップは青色系の光を発光する
と共に、前記モールド樹脂には前記LEDチップの発光
の一部を吸収してLEDチップの発光よりも長波長光を
発生する蛍光体が分散され、前記LEDチップの発光と
前記蛍光体から発生する光との混色によって白色に発光
することを特徴とする請求項1記載の発光ダイオード。
2. The LED chip emits blue light, and the mold resin has a phosphor that absorbs a part of the light emitted from the LED chip and generates light having a longer wavelength than the light emitted from the LED chip. The light emitting diode according to claim 1, wherein the light emitting diode emits white light by being mixed and mixed with light emitted from the LED chip and light generated from the phosphor.
【請求項3】前記蛍光体は、ガーネット構造を有するイ
ットリウム・アルミン酸塩系の蛍光体に不活剤としてセ
リウム及びプラセオジウムをドープした蛍光体であるこ
とを特徴とする請求項2記載の発光ダイオード。
3. The light emitting diode according to claim 2, wherein said phosphor is a phosphor obtained by doping cerium and praseodymium as an inactivating agent to an yttrium aluminate phosphor having a garnet structure. .
【請求項4】前記請求項1乃至請求項3記載の発光ダイ
オードをプリント基板上に発光方向が該プリント基板と
略水平な向きになるように実装し、該発光ダイオードの
光出射面と端面が略同じ高さで平行に近接するように前
記プリント基板上に導光板が配設されて成ることを特徴
とする液晶表示器のバックライト装置。
4. A light emitting diode according to claim 1, wherein said light emitting diode is mounted on a printed circuit board so that a light emitting direction thereof is substantially horizontal to said printed circuit board. A backlight device for a liquid crystal display, wherein a light guide plate is provided on the printed circuit board so as to be parallel and close to each other at substantially the same height.
JP2001007434A 2001-01-16 2001-01-16 Light-emitting diode, and backlight device of liquid crystal display using the light-emitting diode as light source Pending JP2002217459A (en)

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Publication Number Publication Date
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152840A (en) * 2002-10-29 2004-05-27 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142868U (en) * 1984-08-23 1986-03-19 三菱電機株式会社 printed wiring board
JPS62501169A (en) * 1984-12-17 1987-05-07 イギリス国 Luminescent ceramic plate
WO1998005078A1 (en) * 1996-07-29 1998-02-05 Nichia Chemical Industries, Ltd. Light emitting device and display device
JPH1146019A (en) * 1997-07-28 1999-02-16 Nichia Chem Ind Ltd Light-emitting diode and method for forming led indicator
JP2000244022A (en) * 1999-02-18 2000-09-08 Nichia Chem Ind Ltd Chip component type light emitting element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142868U (en) * 1984-08-23 1986-03-19 三菱電機株式会社 printed wiring board
JPS62501169A (en) * 1984-12-17 1987-05-07 イギリス国 Luminescent ceramic plate
WO1998005078A1 (en) * 1996-07-29 1998-02-05 Nichia Chemical Industries, Ltd. Light emitting device and display device
JPH1146019A (en) * 1997-07-28 1999-02-16 Nichia Chem Ind Ltd Light-emitting diode and method for forming led indicator
JP2000244022A (en) * 1999-02-18 2000-09-08 Nichia Chem Ind Ltd Chip component type light emitting element

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152840A (en) * 2002-10-29 2004-05-27 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
US7785715B2 (en) 2003-02-25 2010-08-31 Kaneka Corporation Curable composition and method of preparing same, light-shielding paste, light-shielding resin and method of forming same, light-emitting diode package and semiconductor device
WO2004076585A1 (en) * 2003-02-25 2004-09-10 Kaneka Corporation Curing composition and method for preparing same, light-shielding paste, light-shielding resin and method for producing same, package for light-emitting diode, and semiconductor device
JP2005259888A (en) * 2004-03-10 2005-09-22 Citizen Electronics Co Ltd Optical semiconductor package
JP4643918B2 (en) * 2004-03-10 2011-03-02 シチズン電子株式会社 Optical semiconductor package
US7575358B2 (en) 2005-02-18 2009-08-18 Minebea Co., Ltd. Planar Illumination Device
JP2007234375A (en) * 2006-02-28 2007-09-13 Casio Comput Co Ltd Plane light emitting lighting module and image display device provided with the same
JP4618160B2 (en) * 2006-02-28 2011-01-26 カシオ計算機株式会社 Display device
US9882095B2 (en) 2006-05-11 2018-01-30 Lg Innotek Co., Ltd. Light emitting device and method for fabricating the same
JP2007306002A (en) * 2006-05-11 2007-11-22 Lg Innotek Co Ltd Light emitting apparatus and method of manufacturing same
US10580943B2 (en) 2006-05-11 2020-03-03 Lg Innotek Co., Ltd. Light emitting device and method for fabricating the same
US10243112B2 (en) 2006-05-11 2019-03-26 Lg Innotek Co., Ltd. Light emitting device and method for fabricating the same
US9564556B2 (en) 2006-05-11 2017-02-07 Lg Innotek Co., Ltd. Light emitting device and method for fabricating the same
JP2012134529A (en) * 2006-05-11 2012-07-12 Lg Innotek Co Ltd Light-emitting device and manufacturing method of light-emitting device
JP2012134530A (en) * 2006-05-11 2012-07-12 Lg Innotek Co Ltd Light-emitting device and manufacturing method of light-emitting device
US8680545B2 (en) 2006-05-11 2014-03-25 Lg Innotek Co., Ltd Light emitting device and method for fabricating the same
JP2013131784A (en) * 2006-05-11 2013-07-04 Lg Innotek Co Ltd Light emitting device and method for fabricating light emitting device
JP2008053069A (en) * 2006-08-25 2008-03-06 Hitachi Lighting Ltd Light-emitting diode
JP4678873B2 (en) * 2006-10-30 2011-04-27 株式会社 日立ディスプレイズ LIGHT SOURCE MODULE AND LIQUID CRYSTAL DISPLAY DEVICE AND LIGHTING DEVICE USING THE SAME
JP2008112607A (en) * 2006-10-30 2008-05-15 Hitachi Displays Ltd Light-source module, and liquid-crystal display device and lighting device respectively using the same
US8273842B2 (en) 2007-11-09 2012-09-25 Kaneka Corporation Process for production of cyclic polyorganosiloxane, curing agent, curable composition, and cured product of the curable composition
US9464172B2 (en) 2007-12-10 2016-10-11 Kaneka Corporation Alkali-developable curable composition, insulating thin film using the same, and thin film transistor
US8809414B2 (en) 2008-10-02 2014-08-19 Kaneka Corporation Photocurable composition and cured product
KR101026669B1 (en) 2009-11-18 2011-04-06 김남호 Led lighting device with excellent lightness and heat radiation
JP2013115442A (en) * 2011-11-24 2013-06-10 Rohm Co Ltd Image sensor module
KR20150134276A (en) * 2014-05-21 2015-12-01 니치아 카가쿠 고교 가부시키가이샤 Mounting structure of semiconductor device, backlight device and mounting substrate
US10129977B2 (en) 2014-05-21 2018-11-13 Nichia Corporation Semiconductor device mounting structure, backlight device, and mounting substrate
JP2016001731A (en) * 2014-05-21 2016-01-07 日亜化学工業株式会社 Semiconductor device mounting structure, backlight device and mounting substrate
KR102360666B1 (en) * 2014-05-21 2022-02-09 니치아 카가쿠 고교 가부시키가이샤 Mounting structure of semiconductor device, backlight device and mounting substrate
WO2018096571A1 (en) 2016-11-22 2018-05-31 国立研究開発法人情報通信研究機構 Light-emitting module provided with semiconductor light-emitting element that emits deep ultraviolet light
KR20190085950A (en) 2016-11-22 2019-07-19 코쿠리츠켄큐카이하츠호진 죠호츠신켄큐키코 A light emitting module including a semiconductor light emitting element for emitting intrinsic ultraviolet light;
US11282992B2 (en) 2016-11-22 2022-03-22 National Institute Of Information And Communications Technology Light-emitting module provided with semiconductor light-emitting element that emits deep ultraviolet light

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