JP4261925B2 - Light emitting element storage package and light emitting device - Google Patents

Light emitting element storage package and light emitting device Download PDF

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Publication number
JP4261925B2
JP4261925B2 JP2003012719A JP2003012719A JP4261925B2 JP 4261925 B2 JP4261925 B2 JP 4261925B2 JP 2003012719 A JP2003012719 A JP 2003012719A JP 2003012719 A JP2003012719 A JP 2003012719A JP 4261925 B2 JP4261925 B2 JP 4261925B2
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light emitting
emitting element
light
frame
package
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JP2004228239A (en
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美津夫 柳沢
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Description

【0001】
【発明の属する技術分野】
本発明は、発光素子を収容するための発光素子収納用パッケージおよび発光装置に関する。
【0002】
【従来の技術】
従来、発光ダイオード(LED),半導体レーザ(LD)等の発光素子を用いた発光装置は、今後さらなる低消費電力化や長寿命化がすすむものとして注目されており、近年種々の分野で使用され始めている。従来の発光素子を搭載する発光素子収納用パッケージ(以下、パッケージともいう)の断面図を図2に示す。
【0003】
図2に示すように、従来のパッケージ11は、各種樹脂やセラミックス等から成る基体12を有する。基体12には、タングステン(W)やモリブデン(Mo)、マンガン(Mn)等を含む導体ペーストを高温で焼結し、その上面にメッキ法によりニッケル(Ni)メッキ層や金(Au)メッキ層を被着して成る配線導体13が形成されている。この配線導体13を介して、外部からパッケージ内部に搭載された発光素子15に電力や駆動電流が供給できるように接続されている。
【0004】
また基体12は、パッケージ11内部側の一方の主面に、各種樹脂やセラミックスから成る、上下面を貫通する貫通孔を有する平面視形状が正方形状の枠体14が設けられており、基体12に700〜900℃の融点を有する銀(Ag)−銅(Cu)等のロウ材、各種樹脂接着剤、高融点ガラス(低融点ガラス)等により固定される。
【0005】
発光素子15は基体12にAgペーストや樹脂接着剤から成る接着剤でダイボンドされており、発光素子15の電極は基体12に設けられた配線導体13とAu製のボンディングワイヤによりワイヤボンディングされる。
【0006】
また、発光素子15を保護するために枠体14の内側に透明部材18が設けられる。この透明部材18は、枠体14の内側に発光素子15を覆うように熱硬化性のエポキシ樹脂などを充填し加熱硬化させることにより設けることができる。透明部材18は、発光素子15や基体12、枠体14と強固に密着して発光素子15をパッケージ11内に強固に固定する働きも有する。さらに、枠体14の上面にガラス,サファイア等から成る透光性で板状の蓋体17が樹脂接着剤等で接着される。これにより、発光素子15を有する発光装置となる。
【0007】
この発光装置は、外部電気回路から供給される駆動電流によって発光素子15が起動され、可視光を発光するものとして使用される。その用途は、各種インジケーター,光センサー,ディスプレイ,ホトカプラ,バックライト,光プリンタヘッド等である。
【0008】
近年、この発光装置を照明用として使用するようになってきており、高輝度および放熱性の点でより高特性の発光装置が要求されている。また、照明用に使用される場合、発光装置の長寿命化が特に重要な問題である。
【0009】
そこで、最近は発光装置の発光輝度を向上させる構成が考えられており、枠体14をより反射率の高い材料で構成することが多い。例えば、枠体14を銀(Ag)やアルミニウム(Al)からなる反射率の高い金属で形成したり、それらの金属を枠体14の表面に被着させて、発光素子15から発光される光を効率よくパッケージ11の外部へ放射させることが提案されている。
【0010】
【特許文献1】
特開2002−344029号公報
【0011】
【発明が解決しようとする課題】
しかしながら、上記従来のパッケージ11では、発光素子15から出る熱によりパッケージ11に歪みが発生し、発光素子15で発光した光の放射角度を安定化させることが困難となるという問題点があった。これは、例えば基体12が樹脂やセラミックスから成り、枠体13が金属から成ることで、基体12と枠体14との熱膨張係数の違いにより発生するものである。したがって、従来のパッケージ11では、高輝度化には十分に対応できるが、高輝度化するために発光素子15に入力されるパワー(電力)を上げると、発光素子15から出る熱により安定した光の放射角度、光強度分布等が得られないといった新たな問題点がでている。今後、局部照明等の用途に使用される場合には、光の放射角度は重要な問題である。このような光の放射角度や光強度分布等の光学的特性に優れかつ安定した発光装置が求められている。
【0012】
したがって、本発明はかかる従来の問題点に鑑みて完成されたものであり、その目的は、発光素子が発光する光を枠体の内面で良好に反射させて外部に均一に効率よく放射でき、また光の放射角度や光強度分布等の光学的特性に優れかつ安定した発光装置を作製できるパッケージおよび発光装置を提供することにある。
【0013】
【課題を解決するための手段】
本発明は、基体、第1の枠体および第2の枠体を備えている。基体は、発光素子が搭載される搭載部導体層を含む上面を有しており、セラミックスから成る。第1の枠体は、外側に向かって広がるように傾斜した内面を有しており、搭載部導体層を取り囲んで基体の上面に接合されている。第1の枠体は、金属から成る。第2の枠体は、基体と実質的に同じ組成のセラミックスから成り、第1の枠体の上面に接合されている。
【0017】
【発明の実施の形態】
本発明の発光素子収納用パッケージについて以下に詳細に説明する。図1は、本発明のパッケージについて実施の形態の一例を示す断面図であり、2は基体、4は第1の枠体、6は第2の枠体であり、主としてこれらで発光素子5を収容するためのパッケージ1が構成されている。
【0018】
本発明のパッケージは、上面の中央部に発光素子5を搭載する搭載部2aを有するセラミックスから成る基体2と、基体2の上面の外周部に搭載部2aを取り囲んで接合され、内面が外側に向かって広がるように傾斜した金属から成る第1の枠体4と、第1の枠体4の上面に接合されたセラミックスから成る第2の枠体6とを具備している。
【0019】
本発明における基体2は、例えば酸化アルミニウム質焼結体(アルミナセラミックス)や窒化アルミニウム質焼結体,ムライト質焼結体,ガラスセラミックス等のセラミックスから成る四角形状の平板であり、発光素子5を支持するための支持部材として機能し、その上面に発光素子5を搭載するための搭載部2aを有している。
【0020】
また、基体2は、搭載部2aおよびその周囲から下面にかけて導出されるメタライズ層から成る配線導体3が被着されている。配線導体3はW,Mo,Cu,Ag等の金属粉末のメタライズ層から成り、パッケージ1内部に収容された発光素子5を外部に電気的に接続するための導電路として機能する。そして、搭載部2aにはLED,LD等の発光素子5がAu−Si(シリコン)合金やAg−エポキシ樹脂等の導電性接合材で固着されるとともに、搭載部2a周囲の配線導体3には発光素子5の電極がボンディングワイヤを介して電気的に接続される。
【0021】
なお、配線導体3の露出する表面にNiやAu等の耐食性に優れる金属を1〜20μm程度の厚みに被着させておくのがよく、配線導体3が酸化腐食するのを有効に防止することができるとともに、配線導体3と発光素子5との接続および配線導体3とボンディングワイヤとの接続を強固にすることができる。したがって、配線導体3の露出表面には、厚さ1〜10μm程度のNiメッキ層と厚さ0.1〜3μm程度のAuメッキ層とが電解メッキ法や無電解メッキ法により順次被着されていることがより好ましい。
【0022】
さらに、基体2の熱伝導率は10W/m・K以上が好ましく、10W/m・K以下では、50mA以上の駆動電流を発光素子5に入力した際に発光素子5の表面温度が100℃以上に達し、発光素子5の寿命を劣化させるばかりではなく、発光素子5の光出力を上げられなくなる。
【0023】
金属から成る第1の枠体4は銀(Ag),Al,Pt等から成るのがよく、これらの金属は、発光素子5から出る光をパッケージ外に80%以上の反射率で反射させることができ、高輝度の発光装置を作製することができる。また、第1の枠体4がFe−Ni合金やFe−Ni−Co合金等から成り、その表面にAg,Al,Pt等の高反射率の金属層を形成してもよい。
【0024】
この第1の枠体4は、基体2に250℃以上の融点で溶融するガラスフリットで接合されるか、熱硬化性のエポキシ樹脂、シリコーン樹脂等の樹脂接着剤で接合される。また第1の枠体4は、その中央部に発光素子5を収容するための横断面形状が円形状や四角形状の貫通穴4aを有しており、貫通穴4a内に発光素子5が収容されるとともに搭載部2aに搭載される。
【0025】
また、第1の枠体4の貫通穴4aの内面は、その算術平均粗さRaが0.004〜4μmであることがよく、これにより、第1の枠体4の内面が発光素子5の発光する光を良好に反射させることとなる。Raが4μmを超えると、貫通穴4a内に収容された発光素子5が発光する光を均一に反射させるのが困難となり、反射する光の強さに偏りが発生しやすくなる。0.004μm未満であると、そのような面を安定かつ効率よく形成することが困難となる傾向にある。
【0026】
さらに貫通穴4aの内面に厚さ1〜10μm程度のNiメッキ層と厚さ0.1〜3μm程度のAuメッキ層とが電解メッキ法や無電解メッキ法により順次被着されていることがよく、第1の枠体4の耐腐食性が向上する。
【0027】
また、貫通穴4aはその横断面形状が円形状であるのがよく、貫通穴4a内に収容された発光素子5が発光する光を貫通穴4aの内面で万遍なく反射させて外部に極めて均一に放射することができる。
【0028】
本発明のパッケージ1においては、第1の枠体4の上面にセラミックスから成る第2の枠体6が接合されており、この第2の枠体6は、例えば基体2と実質的に同じ組成のセラミックスからなるのがよい。すなわち、第2の枠体6は基体2と同じ熱膨張係数の材料から成ることがよい。この場合、セラミックスから成る基体2と金属から成る第1の枠体4との熱膨張係数差によって、第1の枠体4が変形するのを抑えることができ、光の放射角度や光強度分布等の光学的特性が優れているとともに安定している発光装置を作製することができる。
【0029】
発光装置は、使用環境(温度等)によって光の広がり角度(放射角度)の範囲に差はあるが、10度以下に抑えることがよい。10度以下とするには、基体2と第2の枠体6との熱膨張係数の差は5×10−6/℃以下であるのがよい。光の放射角度は、光ビームの光軸に直交する断面での断面形状が円形状であれば、あらゆる断面で一定であり、光ビームの光軸に直交する断面での断面形状が楕円形状等の偏った形状であれば、最大値である。
【0030】
また、基体2および第2の枠体6と第1の枠体4との熱膨張係数の差は20×10−6/℃以下がよく、20×10−6/℃を超えると、第1の枠体4が変形しやすくなる。
【0031】
そして、第2の枠体6は、第1の枠体4の上面に250℃以上の融点で溶融するガラスフリットで接合されるか、熱硬化性のエポキシ樹脂、シリコーン樹脂等から成る樹脂接着剤で接合される。この第2の枠体6は、その中央部に発光素子5を収容するための横断面形状が円形状や四角形状の貫通穴6aを有している。
【0032】
また、第2の枠体6は基体2よりも厚いことがよい。すなわち、第1の枠体4と基体2との接合面積が、第1の枠体4と第2の枠体6との接合面積よりも大きいうえ、第2の枠体6よりも基体2の方が面積が大きいことから、第1の枠体4は基体2の熱膨張の影響を受けて変形し易くなっている。したがって、第2の枠体6の厚さを基体2よりも厚くすることによって、第1の枠体4の上部および下部における熱膨張の影響を同じに近づけて、第1の枠体4の変形をより抑えることができる。
【0033】
さらに、第2の枠体6は内面にAg,Al,Pt等の高反射率の金属層をめっき法等で被着されていてもよい。この場合、第2の枠体6の内面で発光素子5の光を効率的に反射させてさらに高輝度の発光装置と成すことができる。
【0034】
かくして、本発明のパッケージ1は、基体2の搭載部2aに発光素子5を搭載するとともに発光素子5の電極と基体2の配線導体3とをボンディングワイヤを介して電気的に接続し、しかる後、第1の枠体4の内側または第2の枠体6の上方の発光素子5の光軸上に透光性部材を設置することによって発光装置となる。透光性部材は、発光素子5を覆うシリコーン樹脂等の透明樹脂であってもよく、第2の枠体6の上面に樹脂接着剤等で接着された、ガラス,サファイア等から成る平板状,レンズ状の透光性の蓋体7であってもよい。
【0035】
なお、本発明は上記の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を行うことは何等支障ない。
【0036】
【発明の効果】
本発明の発光素子収納用パッケージは、基体の上面の外周部に搭載部導体層を取り囲んで接合され、内面が外側に向かって広がるように傾斜した金属から成る第1の枠体を有していることから、発光素子から出る光を発光素子収納用パッケージ外に80%以上反射させることができ、高輝度の発光装置を作製することができる。また、セラミックスからなる第2の枠体を有していることから、セラミックスから成る基体と金属から成る第1の枠体との熱膨張係数差によって、第1の枠体が変形するのを抑えることができ、光の放射角度や光強度分布等の光学的特性が優れているとともに安定している発光装置を作製することが可能となる。
【0037】
本発明の発光装置は、本発明の発光素子収納用パッケージと、搭載部導体層に搭載された発光素子と、第1の枠体の内側または第2の枠体の上方の発光素子の光軸上に設置された透光性部材とを具備したことにより、輝度、光の放射角度および光強度分布等の光学的特性が優れているとともに安定している、高性能で高信頼性のものとなる。
【図面の簡単な説明】
【図1】本発明の発光素子収納用パッケージについて実施の形態の一例を示す断面図である。
【図2】従来の発光素子収納用パッケージの断面図である。
【符号の説明】
1:発光素子収納用パッケージ
2:基体
2a:搭載部導体層
4:第1の枠体
5:発光素子
6:第2の枠体
7:蓋体
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting element housing package and a light emitting device for housing a light emitting element.
[0002]
[Prior art]
Conventionally, light-emitting devices using light-emitting elements such as light-emitting diodes (LEDs) and semiconductor lasers (LDs) are attracting attention as they are expected to further reduce power consumption and extend their lives in the future, and have been used in various fields in recent years. I'm starting. A cross-sectional view of a light emitting element storage package (hereinafter also referred to as a package) on which a conventional light emitting element is mounted is shown in FIG.
[0003]
As shown in FIG. 2, the conventional package 11 has a base 12 made of various resins, ceramics and the like. A conductive paste containing tungsten (W), molybdenum (Mo), manganese (Mn) or the like is sintered at a high temperature on the substrate 12, and a nickel (Ni) plating layer or a gold (Au) plating layer is formed on the upper surface by plating. A wiring conductor 13 is formed by adhering. The wiring conductor 13 is connected so that electric power and driving current can be supplied from the outside to the light emitting element 15 mounted inside the package.
[0004]
In addition, the base body 12 is provided with a frame body 14 having a square shape in plan view having through holes penetrating the upper and lower surfaces, made of various resins and ceramics, on one main surface inside the package 11. Are fixed with a brazing material such as silver (Ag) -copper (Cu) having a melting point of 700 to 900 ° C., various resin adhesives, high melting point glass (low melting point glass) and the like.
[0005]
The light-emitting element 15 is die-bonded to the base 12 with an adhesive made of Ag paste or resin adhesive, and the electrodes of the light-emitting element 15 are wire-bonded to the wiring conductor 13 provided on the base 12 and a bonding wire made of Au.
[0006]
Further, a transparent member 18 is provided inside the frame body 14 in order to protect the light emitting element 15. The transparent member 18 can be provided by filling the inside of the frame body 14 with a thermosetting epoxy resin or the like so as to cover the light emitting element 15 and then heat-curing it. The transparent member 18 also has a function of firmly fixing the light emitting element 15 in the package 11 by firmly adhering to the light emitting element 15, the base 12, and the frame body 14. Further, a translucent plate-like lid 17 made of glass, sapphire or the like is bonded to the upper surface of the frame 14 with a resin adhesive or the like. As a result, a light emitting device having the light emitting element 15 is obtained.
[0007]
This light emitting device is used to emit visible light when the light emitting element 15 is activated by a driving current supplied from an external electric circuit. The applications are various indicators, optical sensors, displays, photocouplers, backlights, optical printer heads, and the like.
[0008]
In recent years, this light-emitting device has been used for illumination, and a light-emitting device with higher characteristics in terms of high luminance and heat dissipation is required. Further, when used for illumination, extending the life of the light emitting device is a particularly important problem.
[0009]
Therefore, recently, a configuration for improving the light emission luminance of the light emitting device has been considered, and the frame body 14 is often made of a material having higher reflectivity. For example, the light emitted from the light emitting element 15 is formed by forming the frame body 14 with a highly reflective metal made of silver (Ag) or aluminum (Al), or by depositing these metals on the surface of the frame body 14. Is efficiently radiated to the outside of the package 11.
[0010]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-344029
[Problems to be solved by the invention]
However, the conventional package 11 has a problem in that the heat generated from the light emitting element 15 causes distortion in the package 11 and makes it difficult to stabilize the radiation angle of light emitted from the light emitting element 15. This occurs due to a difference in thermal expansion coefficient between the base 12 and the frame 14, for example, because the base 12 is made of resin or ceramics and the frame 13 is made of metal. Therefore, the conventional package 11 can sufficiently cope with the increase in brightness, but if the power input to the light emitting element 15 is increased in order to increase the brightness, stable light is generated by the heat emitted from the light emitting element 15. There are new problems that the radiation angle, light intensity distribution, etc. cannot be obtained. In the future, when used in applications such as local lighting, the light emission angle is an important issue. There is a need for a light-emitting device that is excellent in optical characteristics such as the light emission angle and light intensity distribution and is stable.
[0012]
Therefore, the present invention has been completed in view of such conventional problems, the purpose of which can be uniformly and efficiently radiated to the outside by reflecting the light emitted by the light emitting element well on the inner surface of the frame, It is another object of the present invention to provide a package and a light emitting device that can produce a light emitting device that is excellent in optical characteristics such as a light emission angle and a light intensity distribution and is stable.
[0013]
[Means for Solving the Problems]
The present invention includes a base, a first frame, and a second frame. The substrate has an upper surface including a mounting portion conductor layer on which the light emitting element is mounted, and is made of ceramics. The first frame body has an inner surface that is inclined so as to spread outward, and is joined to the upper surface of the base body so as to surround the mounting portion conductor layer. The first frame is made of metal. The second frame is made of ceramics having substantially the same composition as the base, and is joined to the upper surface of the first frame.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
The light emitting element storage package of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of the package of the present invention. In FIG. 1, 2 is a base, 4 is a first frame, and 6 is a second frame. A package 1 for housing is configured.
[0018]
The package of the present invention is bonded to the base 2 made of ceramics having a mounting portion 2a for mounting the light emitting element 5 at the center of the upper surface, and the outer peripheral portion of the upper surface of the base 2 surrounding the mounting portion 2a, and the inner surface is outward. A first frame body 4 made of a metal inclined so as to spread toward the top and a second frame body 6 made of ceramics joined to the upper surface of the first frame body 4 are provided.
[0019]
The substrate 2 in the present invention is a rectangular flat plate made of ceramics such as an aluminum oxide sintered body (alumina ceramics), an aluminum nitride sintered body, a mullite sintered body, and a glass ceramic. It functions as a support member for supporting, and has a mounting portion 2a for mounting the light emitting element 5 on its upper surface.
[0020]
The substrate 2 is covered with a wiring conductor 3 made of a metallized layer led out from the mounting portion 2a and the periphery to the lower surface. The wiring conductor 3 is made of a metallized layer of metal powder such as W, Mo, Cu, and Ag, and functions as a conductive path for electrically connecting the light emitting element 5 accommodated in the package 1 to the outside. A light emitting element 5 such as an LED or LD is fixed to the mounting portion 2a with a conductive bonding material such as an Au—Si (silicon) alloy or Ag-epoxy resin, and the wiring conductor 3 around the mounting portion 2a is attached to the wiring conductor 3 around the mounting portion 2a. The electrodes of the light emitting element 5 are electrically connected via bonding wires.
[0021]
It should be noted that a metal having excellent corrosion resistance, such as Ni or Au, should be deposited on the exposed surface of the wiring conductor 3 to a thickness of about 1 to 20 μm, and effectively prevent the wiring conductor 3 from being oxidatively corroded. In addition, the connection between the wiring conductor 3 and the light emitting element 5 and the connection between the wiring conductor 3 and the bonding wire can be strengthened. Therefore, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited on the exposed surface of the wiring conductor 3 by an electrolytic plating method or an electroless plating method. Is more preferable.
[0022]
Furthermore, the thermal conductivity of the substrate 2 is preferably 10 W / m · K or more. When the drive current of 50 mA or more is input to the light emitting element 5 at 10 W / m · K or less, the surface temperature of the light emitting element 5 is 100 ° C. or more. Thus, not only the life of the light emitting element 5 is deteriorated but also the light output of the light emitting element 5 cannot be increased.
[0023]
The first frame 4 made of metal is preferably made of silver (Ag), Al, Pt, etc., and these metals reflect light emitted from the light emitting element 5 to the outside of the package with a reflectance of 80% or more. Thus, a light-emitting device with high luminance can be manufactured. Alternatively, the first frame 4 may be made of a Fe—Ni alloy, a Fe—Ni—Co alloy, or the like, and a highly reflective metal layer such as Ag, Al, or Pt may be formed on the surface thereof.
[0024]
The first frame 4 is joined to the base 2 with a glass frit that melts at a melting point of 250 ° C. or higher, or with a resin adhesive such as a thermosetting epoxy resin or silicone resin. The first frame 4 has a through-hole 4a having a circular or quadrangular cross-sectional shape for accommodating the light-emitting element 5 in the center thereof, and the light-emitting element 5 is accommodated in the through-hole 4a. And mounted on the mounting portion 2a.
[0025]
In addition, the inner surface of the through hole 4a of the first frame body 4 may have an arithmetic average roughness Ra of 0.004 to 4 μm, whereby the inner surface of the first frame body 4 emits light from the light emitting element 5. Light is reflected well. When Ra exceeds 4 μm, it becomes difficult to uniformly reflect the light emitted from the light emitting element 5 accommodated in the through hole 4a, and the intensity of the reflected light tends to be biased. If it is less than 0.004 μm, it tends to be difficult to form such a surface stably and efficiently.
[0026]
Further, it is preferable that a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited on the inner surface of the through hole 4a by an electrolytic plating method or an electroless plating method. The corrosion resistance of the frame body 1 is improved.
[0027]
Further, the through hole 4a preferably has a circular cross-sectional shape, and light emitted from the light emitting element 5 accommodated in the through hole 4a is uniformly reflected by the inner surface of the through hole 4a to be extremely outside. Uniform radiation is possible.
[0028]
In the package 1 of the present invention, a second frame 6 made of ceramics is bonded to the upper surface of the first frame 4, and the second frame 6 has, for example, substantially the same composition as the base 2. It is good to consist of ceramics. That is, the second frame 6 is preferably made of a material having the same thermal expansion coefficient as that of the base 2. In this case, it is possible to suppress the deformation of the first frame body 4 due to the difference in thermal expansion coefficient between the base body 2 made of ceramics and the first frame body 4 made of metal, and the light emission angle and light intensity distribution. A light-emitting device having excellent optical characteristics such as the above and stable can be manufactured.
[0029]
The light-emitting device has a difference in the range of the light spread angle (radiation angle) depending on the use environment (temperature, etc.), but it is preferable to suppress it to 10 degrees or less. In order to set it to 10 degrees or less, the difference in thermal expansion coefficient between the base 2 and the second frame 6 is preferably 5 × 10 −6 / ° C. or less. The light emission angle is constant in all cross sections as long as the cross section perpendicular to the optical axis of the light beam is circular, and the cross sectional shape in the cross section orthogonal to the optical axis of the light beam is elliptical. If the shape is biased, it is the maximum value.
[0030]
Further, the difference in thermal expansion coefficient between the base body 2 and the second frame body 6 and the first frame body 4 is preferably 20 × 10 −6 / ° C. or less, and if it exceeds 20 × 10 −6 / ° C., the first The frame 4 is easily deformed.
[0031]
The second frame 6 is bonded to the upper surface of the first frame 4 with a glass frit that melts at a melting point of 250 ° C. or higher, or a resin adhesive made of a thermosetting epoxy resin, silicone resin, or the like. Are joined together. The second frame 6 has a through hole 6a having a circular or quadrangular cross-sectional shape for accommodating the light emitting element 5 at the center thereof.
[0032]
The second frame 6 is preferably thicker than the base 2. That is, the bonding area between the first frame body 4 and the base body 2 is larger than the bonding area between the first frame body 4 and the second frame body 6, and the base body 2 is larger than the second frame body 6. Since the area is larger, the first frame 4 is easily deformed by the influence of the thermal expansion of the base 2. Therefore, by making the thickness of the second frame 6 thicker than that of the base body 2, the effects of thermal expansion at the upper and lower portions of the first frame 4 are made to be the same, and the first frame 4 is deformed. Can be further suppressed.
[0033]
Furthermore, the second frame 6 may be coated with a highly reflective metal layer such as Ag, Al, Pt or the like on its inner surface by a plating method or the like. In this case, the light of the light emitting element 5 can be efficiently reflected by the inner surface of the second frame body 6 to obtain a light emitting device with higher luminance.
[0034]
Thus, in the package 1 of the present invention, the light emitting element 5 is mounted on the mounting portion 2a of the base 2 and the electrodes of the light emitting element 5 and the wiring conductor 3 of the base 2 are electrically connected via the bonding wires. A light-transmitting member is provided by installing a translucent member on the optical axis of the light-emitting element 5 inside the first frame 4 or above the second frame 6. The translucent member may be a transparent resin such as a silicone resin that covers the light emitting element 5, and is a flat plate made of glass, sapphire, etc. bonded to the upper surface of the second frame 6 with a resin adhesive, A lens-like translucent lid 7 may be used.
[0035]
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible without departing from the scope of the present invention.
[0036]
【The invention's effect】
The light emitting element storage package of the present invention has a first frame body made of metal which is joined to the outer peripheral portion of the upper surface of the base member so as to surround the mounting portion conductor layer and is inclined so that the inner surface spreads outward. Therefore, 80% or more of light emitted from the light-emitting element can be reflected outside the light-emitting element storage package, and a high-luminance light-emitting device can be manufactured. In addition, since the second frame body made of ceramics is provided, the first frame body is prevented from being deformed by a difference in thermal expansion coefficient between the base body made of ceramics and the first frame body made of metal. Therefore, it is possible to manufacture a light emitting device that has excellent optical characteristics such as a light emission angle and a light intensity distribution and is stable.
[0037]
The light emitting device of the present invention includes the light emitting element storage package of the present invention, the light emitting element mounted on the mounting portion conductor layer, and the optical axis of the light emitting element inside the first frame or above the second frame. By having a translucent member installed on the top, the optical characteristics such as brightness, light emission angle and light intensity distribution are excellent and stable, and have high performance and high reliability. Become.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a light-emitting element storage package according to the present invention.
FIG. 2 is a cross-sectional view of a conventional light emitting element storage package.
[Explanation of symbols]
1: Light-emitting element storage package 2: Base 2a: Mounting portion conductor layer 4: First frame 5: Light-emitting element 6: Second frame 7: Lid

Claims (2)

上面の中央部に発光素子を搭載する搭載部導体層を有するセラミックスから成る基体と、
該基体の上面の外周部に前記搭載部導体層を取り囲んで接合され、内面が外側に向かって広がるように傾斜した金属から成る第1の枠体と、
該第1の枠体の上面に接合されており、前記基体と実質的に同じ組成のセラミックスから成る第2の枠体と
を具備したことを特徴とする発光素子収納用パッケージ。
A base body made of ceramics having a mounting portion conductor layer on which a light emitting element is mounted at the center of the upper surface;
A first frame body made of a metal which is joined to the outer peripheral portion of the upper surface of the base body so as to surround the mounting portion conductor layer and is inclined so that the inner surface spreads outward;
A second frame that is bonded to the upper surface of the first frame and is made of ceramics having substantially the same composition as the substrate ;
A package for housing a light-emitting element, comprising:
請求項1記載の発光素子収納用パッケージと、
前記搭載部導体層に搭載された発光素子と、
前記第1の枠体の内側または前記第2の枠体の上方の前記発光素子の光軸上に設置された透光性部材と
を具備したことを特徴とする発光装置。
The light emitting element storage package according to claim 1;
A light emitting element mounted on the mounting portion conductor layer;
And the light-transmitting member placed on the optical axis of the upper of the light emitting element of the inner or the second frame of the first frame,
A light emitting device comprising:
JP2003012719A 2003-01-21 2003-01-21 Light emitting element storage package and light emitting device Expired - Fee Related JP4261925B2 (en)

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JP2010283291A (en) * 2009-06-08 2010-12-16 Panasonic Electric Works Co Ltd Light emitting device

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JP2006066519A (en) * 2004-08-25 2006-03-09 Kyocera Corp Wiring circuit board for light-emitting element and the light-emitting device
KR100631993B1 (en) 2005-07-20 2006-10-09 삼성전기주식회사 Led package and fabricating method thereof
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
JP4611937B2 (en) * 2006-06-07 2011-01-12 日亜化学工業株式会社 Surface mount type light emitting device and manufacturing method thereof
JP5380774B2 (en) 2006-12-28 2014-01-08 日亜化学工業株式会社 Surface mount type side surface light emitting device and manufacturing method thereof
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JP7039450B2 (en) * 2018-12-25 2022-03-22 京セラ株式会社 Package for optical equipment and manufacturing method of optical equipment and optical equipment

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JP3673440B2 (en) * 2000-02-24 2005-07-20 京セラ株式会社 Package for housing semiconductor element, method for manufacturing the same, and semiconductor device
JP2001257410A (en) * 2000-03-09 2001-09-21 Kyocera Corp Electronic component

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Publication number Priority date Publication date Assignee Title
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