JP2009038304A - Lamp for lighting - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lamp for lighting by the combination of a semiconductor light emitting element and a phosphor, for which the decline of an irradiation light quantity from the start of lighting and the change of the color temperature and chrominance of irradiation light are little and the uniformity of the light quantity distribution of the irradiation light is excellent. <P>SOLUTION: An LED light source 1 composed by mounting a blue light emitting LED element 3 on an LED mounting board 2 is mounted on an aluminum substrate 4 and the LED light source 1 is covered with a dome-like phosphor cover 6 with a phosphor film 5 formed on the inner surface. When a current is supplied to the LED element 3, white light obtained by additive color synthesis of light for which a part of blue light emitted from the LED element 3 is wavelength-converted by exciting the phosphor film 5 formed on the phosphor cover 6 and a part of the blue light emitted from the LED element 3 is emitted through a light transmissive member 7 to the outside. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an illumination lamp, and more particularly to an illumination lamp using a combination of a semiconductor light source and a phosphor.

  Conventionally, in an illumination lamp using a semiconductor (specifically, for example, an LED) as a light source, an LED lamp having the configuration shown in FIG. 16 or 17 has been used as the illumination lamp that emits white light.

  In the LED lamp 50 of FIG. 16, a blue light emitting semiconductor light emitting element 53 mounted on one end of a lead 51 is resin-sealed with a sealing resin 54, and the sealing resin 54 is a fluorescent cover 55 including a cylindrical portion 55a and a spherical portion 55b. It is what was attached by. The fluorescent cover 55 is set so that the thickness gradually decreases from the apex of the spherical surface portion 55b toward the cylindrical portion 55a.

  At this time, the phosphor is not added to the sealing resin 54, and the phosphor 56 is added to the fluorescent cover 55 with a certain concentration distribution, and the emission intensity emitted from the semiconductor light emitting element 53 in the optical axis direction is high. The high blue light is guided through the sealing resin 54 and applied to the apex portion of the spherical portion 55b having a large amount of phosphor 56 of the fluorescent cover 55, and is emitted in a direction away from the optical axis direction. Is guided through the sealing resin 54 and applied to the edge of the spherical portion 55b of the fluorescent cover 55 with a small amount of the phosphor 56.

  Therefore, among the blue light emitted from the semiconductor light emitting element 53, the wavelength conversion component obtained by exciting the phosphor 56 added to the fluorescent cover 55 and wavelength-converted, and the blue light emitted from the semiconductor light emitting element 53 is fluorescent. The ratio of the blue light component that has passed through the fluorescent cover 55 without exciting the phosphor 56 added to the cover 55 is substantially constant over the entire surface of the fluorescent cover 55, and the wavelength of the light emitted from the LED lamp 50 is It becomes almost uniform in all directions (see, for example, Patent Document 1).

  The LED lamp 60 of FIG. 17 has a configuration in which a blue light emitting semiconductor light emitting element 61 is sealed with a sealing resin 63 obtained by adding a phosphor 62 to a translucent resin, and is used as a small LED lamp ( For example, see Patent Document 2.)

In both the LED lamps of FIGS. 16 and 17, light that has been converted in wavelength by exciting part of the blue light emitted from the blue light emitting semiconductor light emitting element (having a longer wavelength than the blue light). Light) and blue light emitted from the semiconductor light emitting element are added to obtain light of white chromaticity.
JP 2000-22216 A JP 2003-203504 A

  By the way, phosphors generally have temperature dependency in wavelength conversion efficiency and conversion wavelength, and as the temperature rises, the wavelength conversion efficiency decreases and the conversion wavelength shifts to the longer wavelength side.

  Therefore, in the LED lamp 50 having the configuration shown in FIG. 16, the uniformity of the wavelength of the light emitted from the LED lamp 50 is ensured, but the heat generated when the semiconductor light emitting element 53 emits light is fluorescent through the sealing resin 54. The phosphor 56 added to the cover 55 is heated, and as the temperature of the phosphor 56 increases, the wavelength conversion efficiency of the phosphor 56 decreases and the wavelength shift of the conversion wavelength occurs. As a result, the light extraction efficiency when the LED lamp 50 is turned on decreases, and the chromaticity and color temperature shift.

  When the LED lamp 50 having such a configuration is used as a light source of an illumination lamp, the amount of irradiation light of the illumination lamp continues to decrease from the start of lighting of the LED lamp 50 until the LED lamp 50 reaches a thermal saturation state, and The chromaticity and color temperature of the irradiation light will continue to change.

  In the LED lamp 60 having the configuration shown in FIG. 17, since the sealing resin 63 to which the phosphor 62 is added is resin-sealed so as to cover the semiconductor light-emitting element 61, the semiconductor light-emitting element 61 generates heat with respect to the phosphor 62. The influence is larger than that of the LED lamp 50 having the configuration shown in FIG.

  Accordingly, the decrease in wavelength conversion efficiency of the phosphor 62 due to the temperature rise of the phosphor 62 due to heat generation during light emission of the semiconductor light emitting element 61 and the wavelength shift of the conversion wavelength are larger than those of the LED lamp 50 having the configuration shown in FIG. The same applies to a decrease in light extraction efficiency when the LED lamp 60 is turned on, and a shift in chromaticity and color temperature.

  Further, since the sealing resin 63 to which the phosphor 62 is added is located in the vicinity of the semiconductor light emitting element 61, the area of the light emission surface of the sealing resin 63 that becomes the light emitting surface of the LED lamp 60 is small. Therefore, when the LED lamp 60 having such a configuration is used as a light source of an illumination lamp, the light amount distribution of the illumination lamp becomes non-uniform, and the bright spot of the LED lamp 60 is formed on the irradiated surface.

  Accordingly, the present invention was devised in view of the above problems, and the object of the present invention is to reduce the amount of irradiation light from the start of lighting and to reduce the change in the color temperature and chromaticity of the irradiation light, and the light amount distribution of the irradiation light. An object of the present invention is to provide an illumination lamp using a combination of a semiconductor light emitting element and a phosphor with good uniformity.

In order to solve the above problems, the invention described in claim 1 of the present invention includes a semiconductor light emitting device,
Comprising a phosphor cover provided with a phosphor film that emits light that has been excited by the light of the semiconductor light emitting element and wavelength-converted;
At least a gas layer exists between the semiconductor light emitting element and the phosphor film, and light of the semiconductor light emitting element is propagated through at least the gas layer and reaches the phosphor film. .

  The invention described in claim 2 of the present invention is characterized in that, in claim 1, the gas layer is an air layer.

Moreover, the invention described in claim 3 of the present invention is the method according to any one of claim 1 or 2, wherein the shortest distance between the main light emitting surface of the semiconductor light emitting element and the phosphor film is in the range of 5 mm to 50 mm. The area of the phosphor film is in the range of 1.57 cm ^{2 to} 157 cm ² .

  The invention described in claim 4 of the present invention is characterized in that, in any one of claims 1 to 3, the thickness of the phosphor film is in the range of 0.05 mm to 0.15 mm. To do.

  Further, the invention described in claim 5 of the present invention is characterized in that, in any one of claims 1 to 4, the phosphor film is an orthosilicate phosphor.

  The present invention includes a semiconductor light emitting device and a phosphor cover provided with a phosphor film that emits light that has been wavelength-converted by being excited by the light of the semiconductor light emitting device, and is provided between the semiconductor light emitting device and the phosphor. There is at least a gas layer, and light of the semiconductor light emitting element is propagated through at least the gas layer to reach the phosphor film.

  Therefore, the distance from the semiconductor light emitting element to the phosphor cover can be secured through the gas layer, and the area of the phosphor film formed on the phosphor cover together with the phosphor cover can be increased. It was.

  As a result, changes in the amount of light, color temperature, and chromaticity of the irradiated light were reduced due to the heat dissipation effect on the phosphor film by the phosphor cover. In addition, the phosphor film can be made thinner, and the light extraction efficiency is improved. Furthermore, since the light from the semiconductor light emitting element reaches the phosphor cover uniformly, an illumination lamp having a uniform light amount distribution of the irradiated light has been realized.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 15 (the same reference numerals are given to the same portions). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

  The basic configuration of the embodiment relating to the illumination tool of the present invention includes a blue light emitting LED light source, and a fluorescent material in which a phosphor is applied to a translucent member disposed via the LED light source and gas (including air). It has a body cover.

Specifically, as shown in FIG. 1 (perspective view of the LED light source), the LED light source 1 has an LED mounting substrate 2 having a width of 3 mm, a length of 6 mm, and an area of 18 mm ² , and four mounted on the LED mounting substrate 2. It is composed of a blue LED element (hereinafter abbreviated as LED element) 3.

  Then, as shown in FIG. 2 (a perspective view of the lighting lamp of the present embodiment), the LED light source 1 is placed on the aluminum substrate 4 having good thermal conductivity, and the dome-like shape on which the phosphor film 5 is formed. Covered with a phosphor cover 6. The phosphor film 5 is formed by applying an orthosilicate phosphor on the inner surface of the dome-shaped translucent member 7 and having a film thickness of a normal white LED (for example, a conventional LED lamp having the configuration shown in FIG. 17). The thickness is set to 0.09 ± 0.01 mm which is 1/10 of the thickness of the phosphor.

  Therefore, in order to compare and evaluate the performance of the present invention and the conventional example, five examples based on the above embodiment and two comparative examples based on the conventional example were produced and tested.

In the fifth embodiment, the surface area of the phosphor film 5 is changed by changing the radius (inside) of the dome-shaped phosphor cover 6 in the illumination lamp 9 having the configuration shown in FIG. the radius R of the body cover 6 and 10 mm, the surface area S of the phosphor film 5 is 628 mm ^2, example 2 radius R surface area S at 15mm is 1414Mm ^2, example 3 the radius R is the surface area S at 20mm is 2513 mm ² , Example 4 has a radius R of 25 mm and a surface area S of 3927 mm ² , and Example 5 has a radius R of 30 mm and a surface area S of 5655 mm ² .

  Then, as shown in FIG. 3 (cross-sectional view of FIG. 2), when a current is supplied to each of the four LED elements 3, a part of the blue light emitted from the LED elements 3 is formed on the phosphor cover 6. White light obtained by additive color mixing of the yellow light wavelength-converted by exciting the phosphor film 5 and a part of the blue light emitted from the LED element 3 is emitted to the outside through the phosphor cover 6. .

On the other hand, as shown in FIG. 4 (perspective view of the LED light source), the two comparative examples are composed of four LED elements 3 mounted on the LED mounting substrate 2 having a width of 3 mm, a length of 6 mm and an area of 18 mm ^2. Yes. The material of the substrate, the dimensions of the substrate, and the material of the LED element are all the same as in the example. Further, in the comparative example, the periphery of the four LED elements 3 is further sealed with the phosphor 8, and the film thickness of the phosphor 8 on the LED element 3 is the film thickness of the phosphor formed on a normal white LED. It is set to be 0.9 ± 0.1 mm similar to the above. As for the material of the phosphor 8, the comparative example 1 is an orthosilicate phosphor, and the comparative example 2 is an aluminate phosphor.

  The comparative example is placed on an aluminum substrate 4 having a radius R = 30 mm, as shown in FIG. 5 (mounting perspective view of the comparative example), in order to make the heat dissipation condition the same as the example.

  As shown in FIG. 6 (cross-sectional view of FIG. 5), when a current is supplied to each of the four LED elements 3, a part of blue light emitted from the LED elements 3 excites the phosphor 8. The white light obtained by the additive color mixture of the yellow light wavelength-converted by the above and a part of the blue light emitted from the LED element 3 is emitted to the outside through the phosphor 8.

  As test conditions and measurement items, first, the relative luminosity of the orthosilicate phosphor and aluminate phosphor used in Examples and Comparative Examples was measured, and the temperature dependence of the wavelength conversion efficiency of both was compared.

  In each of Examples 1 to 5 and Comparative Examples 1 and 2, the four LED elements 3 are caused to emit light by supplying a current of 700 mA, and the surfaces of the phosphor film 5 and the phosphor 8 with respect to the elapsed light emission time. The temperature was measured (measuring instrument: Memory Hilogger 8421-50 manufactured by HIOKI). The measurement locations were the phosphor film 5 near the apex of the phosphor cover 6 in Examples 1 to 5, and the vicinity of the center of the phosphor 8 in Comparative Example 1.

  Further, in each of Example 5, Comparative Example 1 and Comparative Example 2, the current values supplied to the four LED elements 3 are changed to emit light, and the total luminous flux, color temperature, and chromaticity (X, Y) with respect to the current values. Was measured (measuring instrument: MCPD7000 + 1m integrating sphere manufactured by Otsuka Electronics).

  7 to 12 are graphs showing the results of the above measurement, FIG. 7 is the relationship between the temperature and the relative luminous intensity in the orthosilicate phosphor and the aluminate phosphor, and FIG. 8 is the light emission elapsed time of the LED element and the phosphor layer. 9 is a relationship between the current value supplied to the LED element and the total luminous flux, FIG. 10 is a relationship between the current value supplied to the LED element and the color temperature, and FIG. 11 is a current supplied to the LED element. FIG. 12 shows the relationship between the current value supplied to the LED element and chromaticity (Y).

  Therefore, from FIG. 7, assuming that the relative luminous intensity at 25 ° C. is 100%, the orthosilicate phosphor rapidly decreases when the temperature is 75 ° C. or higher, and reaches 200% at 25 ° C. up to 20%. Go down. On the other hand, the aluminate phosphor decreases in relative light intensity when the temperature exceeds 100 ° C., but does not decrease as rapidly as the orthosilicate phosphor, and maintains 90% light intensity at 25 ° C. even at 200 ° C. ing. Therefore, it can be seen from this graph that the temperature dependence of the wavelength conversion efficiency of the aluminate phosphor is significantly less than that of the orthosilicate phosphor.

  8, in Examples 1 to 5, the temperature of the phosphor film surface is substantially stabilized after about 10 minutes from the start of light emission of the LED element, and the temperature of the phosphor film surface increases as the radius of the phosphor cover increases. Is small. This is because the heat generated by the LED element is diffused in the air inside the light emitter cover and blocks heat transmitted to the phosphor cover, and the surface area (outside) of the phosphor cover increases as the radius of the phosphor cover increases. This is because the contact area with the atmosphere increases, and as a result, the heat dissipation efficiency of the phosphor cover increases, and the temperature rise of the phosphor film formed on the phosphor cover is suppressed.

  On the other hand, in Comparative Example 1, the temperature rise on the phosphor surface from the start of light emission of the LED element is much larger than in Examples 1-5. This is because the phosphor is in direct contact with the LED element and the surface area of the phosphor in contact with the air is very small compared to the surface area of the phosphor cover of Examples 1 to 5, resulting in poor heat dissipation efficiency. This is because the effect of suppressing the temperature rise is small.

  The phosphor surface temperature after about 1500 hours has increased to 195 ° C. in both Comparative Example 1 and Comparative Example 2. At this temperature, Comparative Example 1 using an orthosilicate phosphor according to the graph of FIG. This means that the wavelength conversion efficiency is reduced by nearly 80%, and the wavelength conversion efficiency is also reduced by 10% or more in Comparative Example 2 using the aluminate phosphor.

  On the other hand, in Examples 1 to 5, the phosphor surface temperature after about 1500 hours elapsed is about 100 ° C. or less in all Examples, and similarly, in the structure of this embodiment from the graph of FIG. It was found that a wavelength conversion efficiency of 90% or more can be ensured regardless of whether an orthosilicate phosphor or an aluminate phosphor is used.

  Further, from FIG. 9, in all of Example 5, Comparative Example 1, and Comparative Example 2, the total luminous flux increases as the current supplied to the LED element increases. However, in Comparative Example 1 and Comparative Example 2, the increase rate of the total luminous flux decreases as the current supplied to the LED element increases. This is because the LED element generates a large amount of heat as the current supplied to the LED element increases, and the temperature of the phosphor receiving the heat rises, resulting in a decrease in wavelength conversion efficiency.

  Among them, the decrease in the increase rate of the total luminous flux is larger in Comparative Example 1 using the orthosilicate phosphor than in Comparative Example 2 using the aluminate phosphor. This is because the orthosilicate phosphor has higher temperature dependency of wavelength conversion efficiency than the aluminate phosphor as shown in FIG.

  In contrast, Example 5 using a phosphor cover coated with an orthosilicate phosphor has a smaller decrease in the increase rate of the total luminous flux than Comparative Example 1 using the same orthosilicate phosphor, and uses an aluminate phosphor. Even for the comparative example 2, the decrease in the increase rate of the total luminous flux is small.

  Moreover, it is shown that the relationship between the current and the total luminous flux is almost proportional, and thus the configuration of Example 5 exhibits a good heat dissipation effect and efficiently suppresses the temperature rise of the phosphor. Recognize. In particular, it shows that the heat dissipation effect becomes more prominent as the current flowing through the LED element increases.

  Further, according to FIG. 10, in Comparative Example 1 and Comparative Example 2, the color temperature increases as the current supplied to the blue LED element increases. This is due to a decrease in the wavelength conversion efficiency due to the temperature rise of the phosphor, and the ratio of the light wavelength-converted by the phosphor to the blue light that is emitted from the LED element and does not contribute to the excitation of the phosphor decreases. This is because the blue component of the emitted light is relatively increased.

  The rate of increase in color temperature is higher in Comparative Example 1 using the orthosilicate phosphor than in Comparative Example 2 using the aluminate phosphor. This is due to the fact that the orthosilicate phosphor has a higher temperature dependency of wavelength conversion efficiency than the aluminate phosphor.

  On the other hand, in Example 5, even if the electric current supplied to an LED element becomes large, it turns out that there is almost no change in color temperature, and the heat dissipation effect is exhibited effectively.

  11 and 12, in both Comparative Example 1 and Comparative Example 2, both chromaticity (X) and chromaticity (Y) change greatly with changes in the current flowing through the LED elements. Similar to the relationship between the current value and the color temperature described above, this is due to a decrease in wavelength conversion efficiency due to a temperature rise of the phosphor, and the phosphor with respect to the blue light emitted from the blue LED element and not contributing to the excitation of the phosphor. This is because the ratio of the light wavelength-converted in the above decreases, and the blue component of the additively mixed light relatively increases.

  On the other hand, in Example 5, even when the current supplied to the LED element is increased, both chromaticity (X) and chromaticity (Y) hardly change, and it can be seen that the heat dissipation effect is effectively exhibited. .

  From the above measurement results, in Examples 1 to 5 of the configuration according to the present invention, the heat dissipation effect of the phosphor cover that accommodates the LED element is extremely good, and even if the current supplied to the LED element increases. It was confirmed that the temperature rise of the phosphor film formed on the phosphor cover was effectively suppressed.

  As a result, a light beam approximately proportional to the magnitude of the current can be obtained, and light having a constant color tone (color temperature and chromaticity) that is hardly affected by changes in the current can be obtained. Further, the effect of suppressing the temperature rise of the phosphor also works to maintain a constant luminous flux regardless of the elapsed time from the light emission start time of the LED element.

Therefore, in consideration of the measurement results and the directivity characteristics of the semiconductor light emitting device, the shortest distance between the main light emitting surface of the semiconductor light emitting device and the phosphor film is preferably in the range of 5 mm to 50 mm. It is preferably in the range of 1.57 cm ² to 157 cm ² corresponding to the surface area of a hemisphere having a radius of the shortest distance of 5 mm to 50 mm between the main light emitting surface of the light emitting element and the phosphor film.

  FIG. 13 shows an exploded view of an application example of the lighting lamp of the present invention. The application example includes a substrate 10, a reflection frame 11, and a cap 12. The substrate 10 has a plurality of blue LED elements 3 mounted on one surface side at a predetermined interval.

  On the substrate 10 on which the LED element 3 is mounted, a reflection frame 11 made of a white resin and having a predetermined thickness is disposed. The reflection frame 11 has a bowl-shaped through hole 13 at a position corresponding to each LED element 3, and each LED element 3 is surrounded by a tapered side surface of the through hole 13.

  Further, a cap 12 having a phosphor film (not shown) formed on the surface facing the reflection frame 11 is disposed on the opposite side of the reflection frame 11 from the substrate 10. A curved portion 14 bulging outward is provided at a position corresponding to the LED element 3 mounted on the substrate 10 and the through hole 13 provided in the reflection frame 11 of the cap 12.

  In the illumination lamp 15 having such a configuration, as shown in FIG. 14 (partial sectional view of the illumination lamp), a part of the blue light emitted from each LED element 3 passes through the through hole 13 of the reflection frame 11. Thus, the phosphor film 5 of the cap 12 is directly reached, and part of the light is reflected by the side surface 16 of the through hole 13 of the reflection frame 11, and the reflected light reaches the phosphor film 5 of the cap 12. A part of the direct light and reflected light reaching the phosphor film 5 of the cap 12 is guided through the cap 12 and directly emitted to the outside, and a part of the direct light and reflected light is wavelength-converted by exciting the phosphor film 5. Light is guided through the cap 12 and emitted to the outside.

  At this time, from each curved portion 14 of the cap 12, the blue light from the LED element 3 and the white light obtained by additively mixing the yellow light wavelength-converted by the phosphor film 5 are light-distributed and controlled by the curved surface 14. Released to the outside.

  In this case, since the through hole 13 of the reflecting frame 11 and the space 17 inside the cap 12 exist between the LED element 3 and the phosphor film 5, the heat generated by the LED element 3 reaches the phosphor film 5. Since the area of each curved portion 14 is suppressed with respect to the size of the LED element 3, the heat generated by the LED element 3 reaching the phosphor film 5 is efficiently dissipated to the outside, and the temperature of the phosphor film 5 rises. Can be reduced.

  Further, by securing a predetermined distance between the LED element 3 and the phosphor film 5 and increasing the area of the phosphor film 5 irradiated by one LED element 3, the light from the LED element 3 is reflected by the phosphor film. 5 is evenly irradiated.

  As a result, it was possible to realize an illumination lamp having a uniform surface luminance with little change in brightness, color temperature, and chromaticity regardless of the lighting time.

  The illumination lamp is an application example according to the present invention, and various other application examples are conceivable. For example, different types of phosphor films are applied to the adjacent curved portions of the cap to form the whole with two types of phosphor films, and the LED element mounted on the substrate is one at a position corresponding to the curved portion of the cap. It is also possible to irradiate light with different color temperature and chromaticity by disposing them and shifting the position of the substrate and the cap in the circumferential direction.

  As described above, in the illumination lamp of the present invention, a predetermined distance is ensured between the blue LED element and the phosphor film, and the area of the phosphor film is 30 times that of the LED light source.

  As a result, the thickness of the phosphor layer can be reduced to 1/10 of the thickness of the conventional white LED, so that light absorption (see FIG. 15) in the secondary collision in the phosphor film is greatly reduced, and light extraction is performed. The efficiency is improved and the lighting lamp has a large amount of irradiation light. Specifically, the thickness of the phosphor layer is preferably in the range of 0.05 mm to 0.15 mm. When the film thickness is less than 0.05 mm, the ratio of the light excited in the phosphor layer to the excitation light that excites the phosphor layer decreases, and the wavelength conversion rate in the phosphor layer decreases, resulting in a desired color temperature. Can't get chromaticity light.

  In addition, the heat dissipation effect of the phosphor cover coated with the phosphor film functions, and the temperature rise of the phosphor film is suppressed, so that the light extraction efficiency is improved, and the lighting lamp has improved the change in color temperature and chromaticity. It was.

  In addition, since the surface brightness of the phosphor cover is made uniform, the generation of bright spots in the irradiated light is eliminated, and an illumination lamp that irradiates the irradiated surface uniformly is obtained.

  Further, as an application example, various color arrangement patterns can be realized on the same LED mounting substrate by devising the type and application position of the phosphor formed on the phosphor cover.

It is a perspective view of the LED light source used for embodiment of this invention. It is a perspective view of the embodiment of the present invention. FIG. 3 is a cross-sectional view of FIG. 2. It is a perspective view of the LED light source used for a comparative example. It is a perspective view which shows a comparative example. It is sectional drawing of FIG. It is a graph which shows the relationship between the temperature and relative luminous intensity in orthosilicate fluorescent substance and aluminate fluorescent substance. It is a graph which shows the relationship between the light emission elapsed time of a LED element, and the surface temperature of a fluorescent substance. It is a graph which shows the relationship between the electric current value supplied to an LED element, and a total luminous flux. It is a graph which shows the relationship between the electric current value supplied to an LED element, and color temperature. It is a graph which shows the relationship between the electric current value supplied to an LED element, and chromaticity (X). It is a graph which shows the relationship between the electric current value supplied to an LED element, and chromaticity (Y). It is an exploded three-dimensional view which shows the lighting lamp of the application example of this invention. It is a fragmentary sectional view of the lighting lamp of the application example of this invention. It is explanatory drawing of the fluorescent substance film concerning embodiment of this invention. It is explanatory drawing of the LED lamp used for the lamp for illumination of a prior art example. Similarly, it is explanatory drawing of the LED lamp used for the lighting fixture of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 LED light source 2 LED mounting board 3 Blue LED element 4 Aluminum substrate 5 Phosphor film 6 Phosphor film 7 Phosphor cover 7 Translucent member 8 Phosphor 9 Lighting lamp 10 Substrate 11 Reflection frame 12 Cap 13 Through-hole 14 Bending part 15 For illumination Lamp 16 Side 17 Space

Claims (5)

A semiconductor light emitting device;
Comprising a phosphor cover provided with a phosphor film that emits light that has been excited by the light of the semiconductor light emitting element and wavelength-converted;
An illumination lamp characterized in that at least a gas layer exists between the semiconductor light emitting element and the phosphor film, and light of the semiconductor light emitting element is propagated through at least the gas layer and reaches the phosphor film. .   The lighting lamp according to claim 1, wherein the gas layer is an air layer. The shortest distance between the main light emitting surface of the semiconductor light emitting element and the phosphor film is in the range of 5 mm to 50 mm, and the area of the phosphor film is in the range of 1.57 cm ^{2 to} 157 cm ^2. Item 3. An illumination lamp according to any one of Items 1 and 2.   The lighting lamp according to any one of claims 1 to 3, wherein a thickness of the phosphor film is in a range of 0.05 mm to 0.15 mm.   The illumination lamp according to any one of claims 1 to 4, wherein the phosphor film is an orthosilicate phosphor.

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