JP2006120748A - Semiconductor device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device whose optical characteristics, such as light emission distribution, emission intensity are improved, by mounting a plurality of semiconductor elements individually to a first recess. <P>SOLUTION: The semiconductor device comprises an enclosure 1 made of a nontranslucent material, a plurality of first recesses 2 formed on the enclosure 1, a second recess 3 including the first recesses 2, semiconductor elements 4 mounted to each of the first recesses 2, and a light scatter 5 as a light-scattering part covering the first recesses 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device in which a plurality of semiconductor elements (semiconductor light-emitting elements and semiconductor light-receiving elements) are respectively mounted in individual recesses, and an electronic apparatus in which such a semiconductor device is mounted.

  As a conventional semiconductor device on which a plurality of semiconductor elements (semiconductor light emitting elements) are mounted, Conventional Example 1 and Conventional Example 2 described below are known.

  As Conventional Example 1, a semiconductor light emitting device in which a plurality of visible light emitting diodes (light emitting diodes) are mounted in one package is known (see, for example, Patent Document 1). In the semiconductor light emitting device of the conventional example 1, the light emitted from the light emitting diode mounted in the recesses is not only directly emitted out of the package but also the light reflected by the wall surface surrounding the mounting area.

Conventional example 2 is known in which a plurality of light emitting diodes are mounted in respective recesses (see, for example, Patent Document 2).
JP 2004-87935 A JP 2000-294838 A

  However, in the semiconductor light emitting device of Conventional Example 1, since a plurality of light emitting diodes are mounted side by side in the same space (mounting area), compared to a case where one light emitting diode is mounted in one space (mounting area). As a result, the mounting area is widened, and the distance from the light emitting diode to the wall surface is increased, so that the reflector action of the wall surface is reduced and the output (light emission intensity) is reduced. In addition, there is a problem that the output (light emission intensity) is reduced by being influenced by other light emitting diodes mounted in the same mounting area.

  In addition, when an attempt is made to convert the emission color using a phosphor, there has been a problem that the light emission characteristic changes due to the influence of light emitted from other light emitting diodes. Further, when a phosphor is provided so as to cover all the light emitting diodes, there is a problem that it is difficult to control the emission color.

  In addition, since the semiconductor elements to be mounted are limited to visible light emitting diodes, they are limited to improving visibility for illumination, light sources, etc., and combined with other infrared light emitting elements and light receiving elements. It was difficult.

  For example, when combined with a light receiving element, there are various problems in mounting a plurality of different light emitting diodes side by side in a single space, such as special measures are required to distinguish which light emitting diode emits light. .

  Further, the semiconductor device (light emitting diode array) of Conventional Example 2 simply widens the directivity and simply increases the output. In other words, it only realizes wide directivity and high output characteristics, and it is impossible to eliminate the mutual influence of semiconductor elements (light emitting diodes) in a semiconductor device equipped with a plurality of semiconductor elements (light emitting diodes). In addition, there is a problem in that fluctuations in optical characteristics due to the position of the semiconductor element (light emitting diode) (for example, variations in light output when the light emitting diodes are individually lit, fluctuations in the light emission position, etc.) cannot be prevented.

  The present invention has been made in view of such circumstances, and improves the reflection characteristics of the wall surface of the first recess by individually mounting each of a plurality of semiconductor elements (semiconductor light emitting elements) in the independent first recess. In addition, the optical characteristics (emission distribution characteristics, emission intensity) are obtained by applying a light scattering action to the emitted light emitted from the semiconductor elements by the light scattering portion covering the plurality of first recesses, while preventing the influence between the plurality of semiconductor elements. It is an object of the present invention to provide a semiconductor device (semiconductor light-emitting device) improved.

  Providing a semiconductor device (semiconductor light-emitting device) with improved optical characteristics (directivity and light emission intensity) by providing individual lenses corresponding to each semiconductor element (semiconductor light-emitting element) and overall lenses corresponding to a plurality of semiconductor elements. The purpose is to do.

  Each of the plurality of semiconductor elements (semiconductor light-emitting elements) is individually mounted in an independent first recess, and the phosphor is appropriately mounted (arranged) in each first recess to individually perform light conversion by the phosphor. Another object is to provide a semiconductor device (semiconductor light emitting device) that can be used.

  By individually mounting each of the plurality of semiconductor elements (semiconductor light receiving elements) in the independent first recess, the reflection characteristic of the wall surface of the first recess is improved and the influence between the plurality of semiconductor elements is prevented. A semiconductor device (semiconductor light receiving device) in which each semiconductor element has a unique light receiving characteristic by individually sealing the first concave portion with a resin sealing portion and differentiating the optical characteristics of the introduced light introduced into each semiconductor element. Another object is to provide a device.

  A semiconductor device having a light emitting function (light source function, warning light function) and a light receiving function (light sensor function) that are not affected by each other by mounting the light emitting element and the light receiving element individually in the plurality of first recesses. Another object is to provide a (semiconductor optical functional device).

  It is another object of the present invention to provide an electronic device equipped with such a semiconductor device (semiconductor light emitting device, semiconductor light receiving device, semiconductor optical functional device).

  A semiconductor device according to the present invention is a semiconductor device comprising a plurality of first recesses each having a semiconductor element mounted thereon, and a second recess that encloses the plurality of first recesses. A light scattering portion covering the recess is provided.

  With this configuration, the light scattering portion can apply light scattering action to the emitted light emitted from the semiconductor element, uniformizing the optical characteristics (emission distribution characteristics) of the semiconductor device, and improving the optical characteristics (emission intensity characteristics). can do.

  In the semiconductor device according to the present invention, each of the first recesses has a depth for accommodating a wire connected to the semiconductor element and a surface electrode of the semiconductor element.

  With this configuration, the wall surface of the first recess can be used as a reflecting surface (reflector), the reflection characteristics of the first recess can be improved, and the optical characteristics (emission distribution characteristics, emission intensity characteristics) of the semiconductor device can be improved. Can do.

  In the semiconductor device according to the present invention, the light scatterer is a light scatterer provided in the second recess.

  With this configuration, since the light scatterer is provided in the second recess, the emitted light from the first recess can be made uniform. Further, the emitted light can be made uniform without providing a light scatterer in the first recess.

  In the semiconductor device according to the present invention, the light scatterer is a light scattering sheet.

  With this configuration, the light scattering sheet can be easily manufactured and can be attached to the top of the first recess, so that it can be easily mounted on the second recess and the light scatterer can be easily formed (manufacturing the semiconductor device). become.

  The semiconductor device according to the present invention is characterized in that an entire lens covering the plurality of first recesses is joined to the second recess.

  With this configuration, the entire lens covering the plurality of first recesses is bonded to the second recess, so that the optical characteristics (directivity) of the semiconductor device can be improved. That is, when the semiconductor element is a semiconductor light emitting element, the emission intensity of the semiconductor device can be improved by collecting the emitted light spread by the light scatterer. Further, the uniformity of the emission color can be improved by the color mixture within the entire lens. In addition, by joining the entire lens to the wall surface and the opening of the second recess, the reflection characteristics on the wall surface of the second recess can be used effectively, and the optical characteristics (directivity) can be reliably improved.

  In the semiconductor device according to the present invention, the whole lens sandwiches the light scatterer.

  With this configuration, since the entire lens sandwiching the light scatterer is used, it is possible to reliably perform alignment between the entire lens and the light scatterer, and a semiconductor device that effectively uses the action of the light scatterer and the entire lens. be able to.

  In the semiconductor device according to the present invention, the light scattering portion is a light scattering sealing portion provided in the first recess.

  With this configuration, since the light scattering sealing portion is provided in the first recess, the emitted light from the semiconductor element mounted on the first recess can be made uniform. Further, the emitted light can be made uniform without providing a light scatterer in the second recess. That is, the opening of the first recess can be used as an equivalent light source of emitted light.

  In the semiconductor device according to the present invention, the light scattering sealing portion is formed of a light scattering material-containing resin.

  With this configuration, since the light scattering sealing portion is formed of a light scattering material (filler) -containing resin, the light scattering sealing portion can be easily formed, and the scattering characteristics can be improved.

  In the semiconductor device according to the present invention, an individual lens is bonded to each of the plurality of first recesses.

  With this configuration, since the individual lenses that respectively cover the plurality of first recesses are joined to the first recess, the optical characteristics (directivity) of the first recess can be improved. In particular, when an individual lens is bonded to the opening of the first recess, the optical characteristics (directivity) can be improved with certainty.

  In the semiconductor device according to the present invention, an entire lens that covers the individual lenses bonded to each of the plurality of first recesses is bonded to the second recess.

  With this configuration, since the entire lens is provided in addition to the individual lenses, the directivity can be further improved and the emission intensity of the semiconductor device can be improved. In particular, when the whole lens is bonded to the wall surface of the second recess and the individual lens is integrated with the whole lens, the optical characteristics (directivity) are reliably improved. Since the light scattering sealing portion is provided in the first recess, it is possible to easily design a lens even when an individual lens and an entire lens are combined.

  In the semiconductor device according to the present invention, the spread angles of the wall surfaces of at least two of the plurality of first recesses are different from each other.

  With this configuration, the spread angles of the wall surfaces of the first recesses are different from each other, so that the reflection characteristics by the wall surfaces (inclined surfaces), that is, directivity can be different from each other. Therefore, it is possible to provide a semiconductor device that can properly use a plurality of first concave portions having different directivities according to the purpose of use and application. For example, when the semiconductor element is a light-emitting element, the first recess that has a small divergence angle and reaches the distant light according to the distance to which the emitted light is radiated is used for a long distance, and the divergence is large and the emitted light is dispersed. The first recess can be for a short distance.

  In the semiconductor device according to the present invention, the bottom surfaces of the plurality of first recesses are separated from each other, and the opening is common.

  With this configuration, since the opening of the first recess is common, the color mixing property in the first recess can be greatly improved.

  In the semiconductor device according to the present invention, the semiconductor element is a semiconductor light emitting element.

  With this configuration, the characteristics of the semiconductor element mounted in the first recess can be effectively utilized, and a semiconductor device (semiconductor light emitting device) having desired optical characteristics can be obtained.

  In the semiconductor device according to the present invention, the semiconductor light emitting element is a light emitting diode.

  With this configuration, a highly functional and low power consumption semiconductor device can be obtained.

  The semiconductor device according to the present invention includes at least three first recesses on which the semiconductor light emitting elements are mounted.

  With this configuration, the number of the first recesses is three or more, and the semiconductor light emitting element is mounted on each of them, so that a semiconductor device with high emission intensity that emits multicolor light can be obtained. In particular, when a semiconductor light emitting element corresponding to three primary colors is mounted, a semiconductor device (semiconductor light emitting device) capable of emitting white light is obtained.

  In the semiconductor device according to the present invention, a red semiconductor light emitting element, a green semiconductor light emitting element, and a blue semiconductor light emitting element are mounted corresponding to each of the first recesses.

  With this configuration, a red semiconductor light emitting element that emits three primary colors, a green semiconductor light emitting element, and a blue semiconductor light emitting element are individually mounted in each first recess, so that a semiconductor with high emission intensity that can emit multicolor and white light It becomes a device (semiconductor light emitting device).

  In the semiconductor device according to the present invention, a blue semiconductor light emitting element, a blue semiconductor light emitting element, a red light emitting phosphor that emits red light when excited by blue light of the blue semiconductor light emitting element, and blue corresponding to each of the first recesses A semiconductor light emitting element and a green light emitting phosphor that emits green light when excited by blue light of the blue semiconductor light emitting element are mounted.

  With this configuration, blue light is converted into red light or green light to emit three primary colors, so that a semiconductor device (semiconductor light emitting device) that emits multi-color and white light can be obtained, and blue that is not color-converted. By using light as it is, a semiconductor device with high luminance can be obtained. Since the phosphors are arranged in the respective first recesses that are independent from each other, they are not affected by the light emission of the blue semiconductor light emitting elements arranged in the other first recesses, so that the emission color can be controlled easily and accurately. it can. Since the phosphor excited by blue light is used, the color rendering can be improved as compared with the case of using single-color red and green semiconductor light emitting elements.

  In the semiconductor device according to the present invention, a blue semiconductor light emitting element, an ultraviolet semiconductor light emitting element, a red light emitting phosphor that emits red light when excited by ultraviolet light of the ultraviolet semiconductor light emitting element, and ultraviolet light corresponding to each of the first recesses. A semiconductor light emitting element and a green light emitting phosphor that emits green light when excited by ultraviolet light of the ultraviolet semiconductor light emitting element are mounted.

  With this configuration, since ultraviolet light is converted into red light or green light to emit three primary colors, a semiconductor device (semiconductor light emitting device) that emits multicolor and white light can be obtained, and blue that is not color-converted. By using light as it is, a semiconductor device with high luminance can be obtained. Since the phosphors are arranged in the respective first recesses that are independent from each other, they are not affected by the light emission of the blue semiconductor light emitting elements arranged in the other first recesses, so that the emission color can be controlled easily and accurately. it can. Since the phosphor excited by ultraviolet light is used, the color rendering can be improved as compared with the case of using monochromatic red and green semiconductor light emitting elements.

  A semiconductor device according to the present invention is a semiconductor device including at least two first recesses and a second recess that encloses the first recess, and the first recess in one of the first recesses emits semiconductor light. The element is characterized in that a semiconductor light receiving element is mounted in the other first recess.

  With this configuration, since at least two first recesses are provided, a semiconductor light emitting element is mounted in one first recess and a semiconductor light receiving element is mounted in the other first recess, so that a light emitting function (light source function, warning lamp function) And a light receiving function (optical sensor function) can be provided as a semiconductor device (optical semiconductor device) having a composite function.

  The semiconductor device according to the present invention is characterized in that a light scattering sealing portion is provided in the first recess in which the semiconductor light emitting element is mounted.

  With this configuration, since the light scattering sealing portion is provided in the first recess, light emitted from the semiconductor light emitting element mounted in the first recess can be made uniform. That is, the opening of the first recess is an equivalent light source of emitted light.

  The semiconductor device according to the present invention is characterized in that an individual lens is bonded to the first recess in which the semiconductor light emitting element is mounted.

  With this configuration, the individual lens that covers the first concave portion on which the semiconductor light emitting element is mounted is bonded to the first concave portion, and the optical characteristics (directivity) of the first concave portion can be improved. In particular, when an individual lens is bonded to the opening of the first recess, the optical characteristics (directivity) are reliably improved.

  In the semiconductor device according to the present invention, the semiconductor light emitting element is a white semiconductor light emitting element.

  With this configuration, since the semiconductor light emitting element is a white semiconductor light emitting element, the external (introduction light) luminance is detected from the light reception signal of the semiconductor light receiving element, and the emission intensity (luminance) of the white semiconductor light emitting element is determined according to the detection result. A white light source that can be adjusted can be obtained.

  The semiconductor device according to the present invention is characterized in that the semiconductor light receiving element is configured to detect ultraviolet rays.

  With this configuration, it is possible to provide a semiconductor device that detects ultraviolet rays and warns against the ultraviolet rays by light emission of the semiconductor light emitting element.

  The semiconductor device according to the present invention is further characterized by further comprising the first concave portion on which a red semiconductor light emitting element is mounted.

  With this configuration, when a semiconductor light emitting element is used as a light source, the color rendering property is improved by supplementing red when the redness is insufficient as the light source (spectrum), and the light source has a more natural color. it can.

  The semiconductor device according to the present invention is further characterized by further comprising the first concave portion on which an infrared semiconductor light emitting element is mounted.

  With this configuration, the infrared semiconductor light emitting element can be used as a light source to irradiate the detection target with infrared light, so that a foreign object (for example, dust) that cannot be detected by the light emitted from the white light source can be detected by the semiconductor light receiving element. In addition, the function as a light source can be improved, and a semiconductor device with an improved detection function can be obtained.

  The semiconductor device according to the present invention is a semiconductor device including a plurality of first recesses on which semiconductor light receiving elements are respectively mounted, and a second recess including the plurality of first recesses. Each of the recesses has a resin sealing portion.

  With this configuration, since the plurality of first concave portions are individually resin-sealed, the optical characteristics of the resin-sealed portions can be changed in each of the first concave portions. A semiconductor device having unique light receiving characteristics can be obtained.

  An electronic apparatus according to the present invention is characterized by mounting the semiconductor device according to the present invention.

  With this configuration, an electronic device having desired optical characteristics (light emitting function, light receiving function, directivity, light emission intensity, light receiving characteristics) can be obtained.

  According to the semiconductor device of the present invention, by mounting a plurality of semiconductor elements (semiconductor light emitting elements) in individual recesses, it is possible to prevent the influence and interference between the plurality of semiconductor elements, so that optical characteristics ( There is an effect of realizing a semiconductor device with improved emission intensity.

  According to the semiconductor device of the present invention, the optical characteristics (uniformity of light emission distribution) of the semiconductor element mounted on the first recess are improved by the light scattering portion that covers the first recess, and the optical characteristics are improved. The effect of realizing is achieved.

  According to the semiconductor device of the present invention, a semiconductor device with improved optical characteristics (directivity and light emission intensity) is realized by providing an individual lens corresponding to a semiconductor element and an entire lens corresponding to all of a plurality of semiconductor elements. There is an effect.

  The semiconductor device according to the present invention has an effect of realizing a semiconductor device capable of individually (without mutual interference) performing light conversion with a phosphor on a plurality of semiconductor elements.

  According to the semiconductor device of the present invention, by mounting a plurality of semiconductor elements (semiconductor light receiving elements) in the individual first recesses, it is possible to prevent the influence and interference between the plurality of semiconductor elements. There is an effect of realizing a semiconductor device with improved characteristics (each of the plurality of semiconductor elements having unique light receiving characteristics).

  According to the semiconductor device of the present invention, a light emitting function (light source function (lighting function), warning light function) that is not affected by each other by mounting the light emitting element and the light receiving element individually in the plurality of first recesses, and There is an effect of realizing a semiconductor device (semiconductor optical functional device) having a light receiving function (optical sensor function).

  The electronic device according to the present invention has an effect that an electronic device having a combined optical function (light emitting function, light receiving function, light emitting / receiving function) can be realized.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Embodiment 1>
FIG. 1 is a schematic diagram showing a semiconductor device according to the first embodiment of the present invention. FIG. 4A is a schematic plan view, and FIG. 4B is a schematic perspective side view showing a side surface in a state where the main part is seen through.

  The semiconductor device shown in FIG. 1 includes a housing 1 made of an opaque material, a plurality of first recesses 2 formed in the housing 1, a second recess 3 containing the plurality of first recesses 2, The main components are a semiconductor element 4 mounted in each first recess 2 and a light scatterer 5 as a light scattering portion covering the plurality of first recesses 2. External terminals 6 are formed on the outer periphery of the bottom of the housing 1 so that surface mounting is possible. A pin mark 7 is formed at one end of the upper portion of the housing 1 to indicate the polarity of the external terminal 6.

  The 1st recessed part 2 is formed in the housing | casing 1 as a bowl shape which has a bottom face, a wall surface (an inclined surface, a reflective surface), and an opening part. That is, the wall surface of the first recess 2 has a spread angle so as to widen toward the opening (an angle at which the wall surface widens from the bottom surface toward the opening: an inclination angle with respect to the vertical direction of the bottom surface). A semiconductor element 4 is mounted on the bottom surface of the first recess 2. A wiring pattern (not shown) for mounting the semiconductor element 4 on the bottom surface of the first recess 2 (die bonding), and a surface electrode (not shown) of the semiconductor element 4 and a wire (not shown) are connected (not shown). A wiring pattern (not shown) to be wire-bonded is appropriately formed. These wiring patterns are extended and connected to the external terminals 6.

  The depth of the first recess 2 is formed to be larger than the chip thickness of the semiconductor element 4 and the height of the wire bonded to the surface electrode of the semiconductor element 4. That is, the first recess 2 has a depth for housing the semiconductor element 4 and the wire connected to the surface electrode of the semiconductor element 4.

  Since one semiconductor element 4 is mounted on one first recess 2, the wall surface of the first recess 2 can be shaped close to the semiconductor element 4, so that the action of the wall surface as a reflecting surface (reflector) can be achieved. The reflection characteristic of the first recess 2 can be improved, and the optical characteristic (emission intensity) of the semiconductor device can be improved. Since the wall surface is an inclined surface having a divergence angle, reflection characteristics can be further improved, and light emitted from the semiconductor element 4 can be efficiently emitted. Therefore, it is more preferable that the wall surface has a mirror finish or a reflective film is formed.

  The 2nd recessed part 3 is formed so that the some 1st recessed part 2 (opening part of the 1st recessed part 2) may be included. That is, the opening of the first recess 2 is shaped to be disposed on the bottom surface of the second recess 3. Moreover, the 2nd recessed part 3 is the mortar shape which has a divergence angle so that it may become wide toward an opening part similarly to the 1st recessed part 2, and it is preferable that a wall surface acts as a reflective surface. That is, it is more preferable that the wall surface has a mirror finish or a reflective film is formed.

  Since the light scatterer 5 is provided in the second recess 3 so as to cover all the first recesses 2, a light scattering action is applied to the light emitted from the first recess 2. That is, the color mixing property (uniformity) of the light emitted from the first recess 2 can be improved. Since the color mixing property and uniformity are improved, uniform optical characteristics (light emission distribution characteristics) can be obtained, and as a result, the optical characteristics (light emission intensity) can be improved. In addition, the difference in directivity depending on the position of the first recess 2 can be eliminated, and the variation in optical characteristics (for example, the distribution of the light emission position (position of the first recess 2) differs depending on the position of viewing the semiconductor device). Can be resolved.

  The light scatterer 5 can be composed of, for example, a sealing resin containing a light scattering material (filler). As the light scattering material (filler), fine particles of silica (silicon oxide) are preferable. If the first recess 2 is sealed with a transparent resin in advance and the bottom surface of the second recess 3 is made flat, the light scatterer 5 can be easily formed.

  Moreover, the light-scattering body 5 can be comprised with a light-scattering sheet. The light scattering sheet is easy to manufacture and can be attached to the top of the first recess 2 (the bottom surface of the second recess 3), so that it can be easily attached to the second recess 3 and the light scattering body 5 is formed. Since the resin sealing step is not required, the light scatterer 5 can be easily formed. That is, it becomes easy to manufacture the semiconductor device. When using a light-scattering sheet, it is preferable to seal the 1st recessed part 2 with sealing resin, in order to protect the stability of a light-scattering sheet, the semiconductor element 4, and a wire.

  The second concave portion 3 and the first concave portion 2 are integrally formed as a constituent member of the housing 1, but the first concave portion 2 and the second concave portion 3 are separately formed and integrated by overlapping and joining. Alternatively, it may be integrally formed from the beginning. Alternatively, the casing 1 may be formed by superimposing and bonding a casing member in which the first recess 2 and the second recess 3 are integrally formed on a substrate (a bottom portion of the casing 1) on which a wiring pattern (not shown) is formed. .

  The semiconductor element 4 is preferably a semiconductor light emitting element, for example. If the semiconductor element 4 is composed of a semiconductor light emitting element, light emitted from the semiconductor light emitting element can be made uniform, so that a surface light source having an area corresponding to the opening of the first recess 2 can be obtained.

  That is, the semiconductor light emitting element constitutes a semiconductor device (semiconductor light emitting device) having desired optical characteristics (light emitting function) by interaction with the first concave portion 2 and the second concave portion 3.

  Note that if the semiconductor light emitting element is formed of a light emitting diode, a highly functional and low power consumption type semiconductor device is obtained.

  By providing at least three first recesses 2, semiconductor light-emitting elements having different emission colors can be mounted on each of the first recesses 2, thereby providing a semiconductor device that emits multicolor light. In particular, if a semiconductor light emitting element capable of emitting light corresponding to the three primary colors is mounted, a semiconductor device that emits white light in addition to multicolor can be obtained.

<Embodiment 2>
FIG. 2 is a schematic diagram showing a semiconductor device according to the second embodiment of the present invention. FIG. 4A is a schematic plan view, and FIG. 4B is a schematic perspective side view showing a side surface in a state where the main part is seen through. Components similar to those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  The semiconductor device shown in FIG. 1 includes a housing 1, a plurality of first recesses 2 formed in the housing 1, a second recess 3 containing the plurality of first recesses 2, and a semiconductor mounted in each first recess. Light scattering as a light scattering portion provided in the second recess 3 to cover the element 4, the entire lens 11 joined to the second recess 3 so as to cover the plurality of first recesses 2, and the plurality of first recesses 2. The body 12 is the main component. That is, the entire lens 11 is bonded to the semiconductor device according to the first embodiment.

  The whole lens 11 is composed of a lens head portion 11a and a lens base portion 11b, and a light scatterer 12 is sandwiched therebetween. The entire lens 11 is an outwardly convex lens (a warhead lens), and the lens base 11b is joined to the second recess 3, so that the optical characteristics (directivity) of the semiconductor device can be improved. . In addition, since the light-scattering body 12 is used, it is preferable that the entire lens 11 is made of a transparent resin.

  When the semiconductor element 4 is a semiconductor light emitting element, the emitted light diffused by the light scatterer 14 is collected and emitted in the front direction, so that the emission intensity can be improved (higher brightness).

  Since the lens base 11b and the light scatterer 12 are configured to be bonded to the wall surface of the second recess 3, the light scatterer 12 can be reliably acted on. The light scatterer 12 is preferably a light scattering sheet, but is not limited thereto, and may be formed simultaneously with a resin containing a light scattering material (filler) when the entire lens 11 is formed. Moreover, since the light-scattering body 12 is provided in the 2nd recessed part 3, the 1st recessed part 2 may be sealed with transparent resin and it is good also as a space.

<Embodiment 3>
FIG. 3 is a schematic diagram showing a semiconductor device according to the third embodiment of the present invention. FIG. 4A is a schematic plan view, and FIG. 4B is a schematic perspective side view showing a side surface in a state where the main part is seen through. The same components as those in the first embodiment and the second embodiment are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  The semiconductor device shown in FIG. 1 includes a housing 1, a plurality of first recesses 2 formed in the housing 1, a second recess 3 containing the plurality of first recesses 2, and a semiconductor mounted in each first recess. The light scattering sealing portion 15 as a light scattering portion covering the element 4 and the plurality of first recesses 2 is a main configuration. Needless to say, the first recess 2 has a function as a reflecting surface.

  The light scattering sealing portion 15 is provided in the first recess 2. That is, the light scattering sealing portion 15 is formed so as to fill the wall surface of the first recess 2 and to form the same plane as the bottom surface of the second recess 3 at the opening. Note that the same plane is not necessarily provided, and an appropriate step may be provided. The light scattering sealing portion 15 can be easily formed by using a sealing resin (light scattering material-containing resin) containing the light scattering material (filler) used as the light scattering body 5 in the first embodiment. it can. As the light scattering material (filler), fine particles of silica (silicon oxide) are preferable.

  Needless to say, the light scattering sealing portion 15 may be formed of any material other than the light scattering material-containing resin as long as light scattering occurs. For example, the thick light scattering sheet used in Embodiment 1 can be appropriately sealed in a plug shape.

  By covering the first concave portion 2 with the light scattering sealing portion 15, light scattering occurs in the bowl-shaped inner region of the first concave portion 2. When the semiconductor element 4 is a semiconductor light emitting element, light emitted from the semiconductor light emitting element can be made uniform, so that a surface light source having an area corresponding to the opening of the first recess 2 can be obtained. It goes without saying that the light scatterer 5 may be provided in the second recess 3 together.

<Embodiment 4>
FIG. 4 is a schematic diagram showing a semiconductor device according to Embodiment 4 of the present invention. FIG. 4A is a schematic plan view, and FIG. 4B is a schematic perspective side view showing a side surface in a state where the main part is seen through. The same components as those in the first to third embodiments are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  The semiconductor device shown in FIG. 1 includes a housing 1, a plurality of first recesses 2 formed in the housing 1, a second recess 3 containing the plurality of first recesses 2, and a semiconductor mounted in each first recess. The main components are the element 4, a light scattering sealing portion 15 as a light scattering portion covering the plurality of first recesses 2, and an individual lens 16 individually bonded to each of the plurality of first recesses 2. That is, the individual lens 16 is bonded to the semiconductor device according to the third embodiment. Needless to say, the first recess 2 has a function as a reflecting surface.

  The individual lens 16 is an outwardly convex lens (warhead lens) and is joined to the first concave portion 2, so that the optical characteristics (directivity) of the semiconductor device can be improved. In particular, the directivity can be reliably improved by bonding to the opening of the first recess 2. In addition, since the light-scattering sealing part 15 is used, it is preferable that the individual lens 16 is comprised with transparent resin.

  If the height of the individual lens 16 is matched with the depth of the second recess 3, the optical characteristics of the individual lens 16 and the second recess 3 can be matched, and the function of the second recess 3 as a reflecting surface can be utilized. In addition, since the height of the semiconductor device can be suppressed to be equal to the height of the housing 1, the semiconductor device can be reduced in size even when the optical characteristics are improved by using a lens (a warhead type lens).

  When the semiconductor element 4 is a semiconductor light emitting element, the emitted light diffused by the light scattering sealing portion 15 is collected and emitted in the front direction, so that the emission intensity can be improved (higher brightness). it can.

<Embodiment 5>
FIG. 5 is a schematic diagram showing a semiconductor device according to the fifth embodiment of the present invention. FIG. 4A is a schematic plan view, and FIG. 4B is a schematic perspective side view showing a side surface in a state where the main part is seen through. The same components as those in the first to fourth embodiments are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  The semiconductor device shown in FIG. 1 includes a housing 1, a plurality of first recesses 2 formed in the housing 1, a second recess 3 containing the plurality of first recesses 2, and a semiconductor mounted in each first recess. The element 4, a light scattering sealing portion 15 as a light scattering portion covering the plurality of first recesses 2, an individual lens 16 individually bonded to each of the plurality of first recesses 2, and all the individual lenses 16 are covered. The constructed entire lens 17 is the main component. That is, the entire lens 17 is further provided in the semiconductor device according to the fourth embodiment.

  Since the light scattering sealing portion 15 is formed so as to fill the first recess 2, the individual lens 16 and the entire lens 17 may be transparent, and a design of a synthetic lens including the individual lens 16 and the entire lens 17, Formation is easy. For example, the curved surface (curvature) of the individual lens 16 can be designed to correspond to each of the first concave portions 2, so that when the distance to be used is roughly determined, the light intensity at that position can be optimally designed. It becomes possible. In addition, the directivity can be further increased by superimposing lenses having two curved surfaces (curvatures) (a lens in which the individual lens 16 and the entire lens 17 are assembled).

<Embodiment 6>
FIG. 6 is a schematic diagram showing a semiconductor device according to the sixth embodiment of the present invention. FIG. 4A is a schematic plan view, and FIG. 4B is a schematic perspective side view showing a side surface in a state where the main part is seen through. The same components as those in the first to fifth embodiments are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  The semiconductor device shown in FIG. 1 includes a housing 1 and a plurality of first recesses 2a, 2b, and 2c formed in the housing 1 (referred to as first recesses 2 when it is not necessary to distinguish them from each other). A second recess 3 containing the plurality of first recesses 2, a semiconductor element 4 mounted in each first recess, and light scattering sealing portions 15a, 15b as light scattering portions covering the plurality of first recesses 2, 15c (when it is not necessary to distinguish these from each other, it is described as a light scattering sealing portion 15).

  In the present embodiment, the spread angles of the wall surfaces of the first recesses 2 in the semiconductor devices according to the third and fourth embodiments are different from each other. Since the wall surface of the first recess 2 is also a reflecting surface, the first recess 2 has directivity according to the spread angle of the wall surface. That is, when the spread angle of the wall surface of the first recess 2 is large, the directivity also becomes a wide characteristic, which is suitable for a short distance. Further, when the divergence angle is small, the directivity also has a narrow characteristic, which is suitable for a long distance. Note that the size of the spread angle of the wall surface is also the size of the area of the opening.

  Therefore, since the spread angle (directivity) of the wall surface can be set according to the distance to be applied, the first concave portion 2 can be used properly according to the distance to be applied. Moreover, it becomes possible to obtain desired optical power by changing the combination of the first recesses 2a, 2b, and 2c.

  In the drawing, individual lenses 16a, 16b, and 16c (indicated as individual lenses 16 when there is no need to distinguish them from each other) are respectively joined to the first recesses 2a, 2b, and 2c. ing. Needless to say, if the individual lens 16 is not used, a light scattering portion may be provided in the second recess 3. In FIG. 5B, the first concave portion 2b, the light scattering sealing portion 15b, and the individual lens 16b are omitted.

  The individual lens 16 is an outwardly convex lens (a warhead lens), and the individual lenses 16a, 16b, and 16c are joined to correspond to the first recesses 2a, 2b, and 2c, respectively. By joining the openings of the first recesses 2a, 2b, and 2c, the directivity can be further improved. Further, if the height of the individual lenses 16a, 16b, and 16c is matched with the depth of the second recess 3, the semiconductor device can be downsized. If the individual lenses 16a, 16b, and 16c have the same height, the directivity of the individual lens 16 is smaller when the opening of the first recess 2 is wider, and the directivity is larger when the opening is narrow.

  When the semiconductor element is a light emitting element, the first recess having a small divergence angle and reaching the distant light according to the distance to which the emitted light is radiated is used for a long distance, and the divergence light is dispersed with a large divergence angle. One recess can be used for a short distance.

<Embodiment 7>
FIG. 7 is a schematic diagram showing a semiconductor device according to Embodiment 7 of the present invention. FIG. 4A is a schematic plan view, and FIG. 4B is a schematic perspective side view showing a side surface in a state where the main part is seen through. Components similar to those in the first to sixth embodiments are denoted by the same reference numerals, and description thereof will be omitted as appropriate. In addition, it cannot be overemphasized that the effect of each structure is the same as that of Embodiment 1-6.

  The semiconductor device shown in FIG. 1 includes a housing 1, a plurality of first recesses 2 formed in the housing 1, a second recess 3 containing the plurality of first recesses 2, and a semiconductor mounted in each first recess. The main components are an element 4, a light scattering sealing portion 15 as a light scattering portion covering the plurality of first recesses 2, and an entire lens 18 bonded to the second recess 3 so as to cover the plurality of first recesses 2. In the plurality of first recesses 2, the bottom surfaces are formed separately, and the openings are formed in common. The whole lens 18 includes a lens head portion 18a and a lens base portion 18b, and the light scatterer 12 is sandwiched therebetween. The entire lens 18 may be disposed so as to cover at least the opening of the first recess 2. In addition, if the entire lens 18 is bonded to the wall surface of the second recess 3 as in the second embodiment, the directivity can be reliably improved.

  In the present embodiment, since the openings of the plurality of first recesses 2 are made common, there is an effect that a natural color mixture can be obtained by increasing the degree of color mixing when mixing semiconductor elements. is there.

  Further, the following modifications are possible. Since the light scattering sealing portion 15 as a light scattering portion covering each first recess 2 is provided in the plurality of first recesses 2, the entire lens 18 is held between the lens head 18a, the lens base 18b, and the light sandwiched therebetween. Instead of the configuration of the scatterer 12, the configuration may be made of a single transparent resin. In addition, a semiconductor device in which the entire lens 18 is not provided is also possible. Moreover, since the light-scattering body 12 as a light-scattering part which covers each 1st recessed part 2 is provided in the 2nd recessed part 3, you may comprise the light-scattering sealing part 15 with transparent resin.

<Eighth embodiment>
FIG. 8 is a schematic diagram schematically showing a semiconductor device according to the eighth embodiment of the present invention. The basic configuration is the same as in the first to seventh embodiments, and the same components as those in the first to seventh embodiments are denoted by the same reference numerals and the description thereof is omitted as appropriate. In addition, it cannot be overemphasized that the effect of each structure is the same as that of Embodiment 1-7.

  In the semiconductor device of the figure, the first recesses 2a, 2b and 2c formed at least three, and the second recess 3 containing the first recesses 2a, 2b and 2c are schematically shown. In FIG. The semiconductor elements 4a, 4b, and 4c mounted corresponding to the first recesses 2a, 2b, and 2c are schematically shown, and in FIG. The semiconductor elements 4d, 4e, and 4f are schematically shown, and FIG. 6C schematically shows the semiconductor elements 4g, 4h, and 4i that are mounted corresponding to the first recesses 2a, 2b, and 2c, respectively. . Needless to say, the semiconductor device of this embodiment may further be provided with a first recess in which a light receiving element is mounted.

  The semiconductor element 4a shown in FIG. 5A is a red semiconductor light emitting element, the semiconductor element 4b is a green semiconductor light emitting element, and the semiconductor element 4c is a blue semiconductor light emitting element. That is, the semiconductor device is composed of semiconductor light emitting elements of three primary colors. A red light emitting diode is preferable as the red semiconductor light emitting element, a green light emitting diode is preferable as the green semiconductor light emitting element, and a blue light emitting diode is preferable as the blue semiconductor light emitting element.

  With this configuration, it is possible to emit multicolor (a combination of single colors of red, green, and blue and two colors) and white (a combination of three colors).

  Semiconductor elements 4d, 4e, and 4f shown in FIG. 4B are blue semiconductor light emitting elements. The first recess 2b is appropriately filled with a red light emitting phosphor that is mounted around the semiconductor element 4e (blue semiconductor light emitting element) and emits red light when excited by the light emitted from the blue semiconductor light emitting element (blue light). One recess 2c is appropriately filled with a green light emitting phosphor that is mounted around the semiconductor element 4f (blue semiconductor light emitting element) and emits green light when excited by light emitted from the blue semiconductor light emitting element (blue light). That is, the semiconductor device can emit light of three primary colors.

  Phosphors (red light-emitting phosphors and green light-emitting phosphors) themselves have the effect of scattering materials (fillers), so they may be used as fillers when the first recesses 2 are sealed with resin, and are also used in combination with other fillers. It goes without saying that it is also possible to do. Needless to say, the phosphor may be mounted on the periphery of the semiconductor element 4 or may be appropriately dispersed in the sealing resin, and can be appropriately disposed.

  With this configuration, it is possible to emit multicolor (a combination of single colors of red, green, and blue and two colors) and white (a combination of three colors). Color rendering properties can be improved by a combination of a blue semiconductor light emitting element and a phosphor. A blue light emitting diode is preferable as the blue semiconductor light emitting element. Since the blue light from the blue semiconductor light emitting element that is not color-converted can be directly output, the emission intensity can be improved.

  The semiconductor element 4g shown in FIG. 3C is a blue semiconductor light emitting element, and the semiconductor elements 4h and 4i are ultraviolet semiconductor light emitting elements. The first recess 2b is appropriately filled with a red light emitting phosphor that is arranged around the semiconductor element 4h (ultraviolet semiconductor light emitting element) and emits red light when excited by light emitted from the ultraviolet semiconductor light emitting element (ultraviolet light, ultraviolet light). The first recess 2c is appropriately filled with a green light emitting phosphor that is arranged around the semiconductor element 4i (ultraviolet semiconductor light emitting element) and is excited by light emitted from the ultraviolet semiconductor light emitting element (ultraviolet light, ultraviolet light) to emit green light. is there. That is, the semiconductor device can emit light of three primary colors. The mounting form of the phosphors (red light-emitting phosphor and green light-emitting phosphor) is the same as that in FIG.

  With this configuration, it is possible to emit multicolor (a combination of single colors of red, green, and blue and two colors) and white (a combination of three colors). Color rendering properties can be improved by a combination of an ultraviolet semiconductor light emitting element and a phosphor. As the ultraviolet semiconductor light emitting element, an ultraviolet light emitting diode (for example, peak emission wavelength 405 nm) is preferable. Since the blue light from the blue semiconductor light emitting element that is not color-converted can be directly output, the emission intensity can be improved.

<Embodiment 9>
The basic configuration of the semiconductor device according to the ninth embodiment is the same as that of the first to seventh embodiments, and the same reference numerals are given to the same components as those of the first to seventh embodiments. The description will be omitted as appropriate. In addition, it cannot be overemphasized that the effect of each structure is the same as that of Embodiment 1-7.

  In the present embodiment (not shown), a plurality of first recesses 2 in which semiconductor light receiving elements as semiconductor elements 4 are respectively mounted, a second recess 3 containing the plurality of first recesses 2, and a plurality of first elements. A resin sealing portion that seals each of the recesses 2 with a resin is the main component.

  Further, since the semiconductor element 4 is a semiconductor light receiving element, in order to increase the amount of light received, a light scattering portion (light scatterer 5, light scattering sealing portion 15) covering the first recess 2, an individual lens 16, and an entire lens 11, 17 and 18 are preferably not provided. However, in order to protect the semiconductor light receiving element, a resin sealing portion is provided in a region corresponding to the light scattering sealing portion 15, and the first recesses 2 are respectively sealed with the resin.

  Generally as a sealing resin of a resin sealing part, a transparent resin is preferable. However, if it is necessary to approximate human visual characteristics, a resin that cuts infrared light may be used. Further, when the light receiving characteristics among the plurality of semiconductor light receiving elements are made different, the optical characteristics of the sealing resin are made different from each other, so that the semiconductor light receiving elements in each of the first recesses 2 have unique light receiving characteristics. It can be set as the semiconductor device which has.

  Note that if the semiconductor light receiving element is formed of a phototransistor, a highly functional and low power consumption semiconductor device is obtained.

<Embodiment 10>
FIG. 9 is a schematic diagram schematically showing a semiconductor device according to the tenth embodiment of the present invention. The basic configuration is the same as in the first to seventh embodiments, and the same components as those in the first to seventh embodiments are denoted by the same reference numerals and the description thereof is omitted as appropriate. In addition, it cannot be overemphasized that the effect of each structure is the same as that of Embodiment 1-7.

  In the semiconductor device of FIG. 2A, at least two first recesses 2a and 2b and a second recess 3 including the first recesses 2a and 2b are schematically shown. Moreover, the semiconductor elements 4j and 4k mounted corresponding to the first recesses 2a and 2b, respectively, are schematically shown.

  The semiconductor element 4j is a semiconductor light emitting element, and the semiconductor element 4k is a semiconductor light receiving element. That is, at least one first recess 2a on which the semiconductor light emitting element is mounted and at least one first recess 2b on which the semiconductor light receiving element is mounted are provided.

  Needless to say, a light scattering portion (light scatterer 5, light scattering sealing portion 15) and individual lens 16 may be provided for the semiconductor element 4j. Moreover, it is preferable not to provide a light scattering part and an individual lens for the semiconductor element 4k in order to increase the amount of received light.

  By combining a semiconductor light emitting element and a semiconductor light receiving element, a semiconductor device (semiconductor optical functional device) having both a light emitting function (light source function, warning light function) and a light receiving function (light sensor function) can be obtained. Since the semiconductor light emitting element and the semiconductor light receiving element are respectively mounted in the individual first recesses 2, the respective functions can be surely exhibited. The semiconductor light emitting element is preferably a light emitting diode, and the semiconductor light receiving element is preferably a phototransistor. Note that a control circuit for controlling the semiconductor light emitting element and the semiconductor light receiving element can be formed in a small size by an IC (integrated circuit) and can be easily externally attached.

  For example, when the semiconductor light-emitting element is composed of a white semiconductor light-emitting element, white that can be adjusted for luminance detection that detects light introduced from the outside (brightness) by the semiconductor light-receiving element and generates emitted light having a desired luminance according to the detected luminance It can be an illumination light source. The white semiconductor light emitting element is composed of a blue semiconductor light emitting element and a yellow light emitting phosphor that is mounted around the blue semiconductor light emitting element and is excited by light emission (blue light) of the blue semiconductor light emitting element to generate yellow light. The mixture of blue light and yellow light is recognized as white from the outside.

  For example, when the semiconductor light receiving element is composed of an ultraviolet detection light receiving element, the intensity of ultraviolet light (ultraviolet light) can be detected and a warning can be given by the semiconductor light emitting element. Note that even if the ultraviolet detection light receiving element detects blue light, it can be operated in substantially the same manner.

  In addition, when used as a warning lamp, a light emission color other than white may be preferable. Therefore, the semiconductor light emitting element may be configured with a light emission color other than white light.

  FIG. 7B schematically and schematically shows a situation in which a first recess 2c on which the semiconductor element 4m is mounted is further added to the configuration of FIG. The semiconductor element 4m is a semiconductor light emitting element, and can compensate for the light emitting characteristics that are insufficient in the semiconductor element 4j as the semiconductor light emitting element.

  For example, if the semiconductor element 4j is constituted by a semiconductor light emitting element (white semiconductor light emitting element), the semiconductor element 4k is constituted by a semiconductor light receiving element, and the conductor element 4m is constituted by a red semiconductor light emitting element, the redness of the semiconductor light emitting element (semiconductor element 4j) as a light source. When there is a shortage of color, supplementing red with a red semiconductor light-emitting element can improve color rendering and provide a light source having a more natural color.

  If the semiconductor element 4j is a semiconductor light emitting element (white semiconductor light emitting element), the semiconductor element 4k is a semiconductor light receiving element, and the semiconductor element 4m is an infrared semiconductor light emitting element, the white semiconductor light emitting element (semiconductor element 4j) as a light source is used. Foreign matter (such as dust) that cannot be detected with high accuracy by the irradiated light can be detected by the semiconductor light receiving element (semiconductor element 4k) by the irradiated light from the infrared semiconductor light emitting element (semiconductor element 4m).

  The semiconductor element 4j can be replaced with a plurality of semiconductor light emitting elements that emit monochromatic light. In this case, multicolor light emission according to the light receiving state (detection result of the optical sensor) of the semiconductor light receiving element is possible. It becomes. At this time, it is possible to further increase the number of first recesses 2 in accordance with the number of semiconductor light emitting elements that emit monochromatic light.

<Embodiment 11>
The semiconductor device according to any of Embodiments 1 to 10 can be mounted on an electronic device to provide an electronic device having desired optical characteristics (light emitting function, light receiving function). Specific application examples include a mobile phone, a digital camera, an amusement device, a small lighting device, a digital home appliance on which an LED can be mounted, an in-vehicle electronic device, and the like.

  When a semiconductor device (see Embodiment 10) in which a semiconductor light receiving element is configured with an ultraviolet detection light receiving element is incorporated in a cosmetic compact, when ultraviolet light with a predetermined intensity or higher is detected, light emission from the semiconductor light emitting element (white or (Single color) can be made into a compact for cosmetics in the form of issuing a warning.

  When a semiconductor device (see Embodiment 10) configured by adding an infrared semiconductor light emitting element to a white semiconductor light emitting element as a semiconductor light emitting element is incorporated as a light source of a scanner, infrared light is irradiated in advance by the infrared semiconductor light emitting element. By reading foreign matter such as dust, and correcting the brightness of the original obtained by irradiating the original with a white light source based on the foreign matter information read by the infrared semiconductor light emitting element, the original can be read with high accuracy. Can be a scanner.

1 is a schematic diagram showing a semiconductor device according to a first embodiment of the present invention. It is the schematic which shows the semiconductor device which concerns on Embodiment 2 of this invention. It is the schematic which shows the semiconductor device which concerns on Embodiment 3 of this invention. It is the schematic which shows the semiconductor device which concerns on Embodiment 4 of this invention. It is the schematic which shows the semiconductor device which concerns on Embodiment 5 of this invention. It is the schematic which shows the semiconductor device which concerns on Embodiment 6 of this invention. It is the schematic which shows the semiconductor device which concerns on Embodiment 7 of this invention. It is the schematic which shows typically the semiconductor device which concerns on Embodiment 8 of this invention. It is the schematic which shows typically the semiconductor device which concerns on Embodiment 10 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Case 2, 2a, 2b, 2c 1st recessed part 3 2nd recessed part 4, 4a, 4b, 4c, 4d, 4e, 4f, 4g, 4h, 4i Semiconductor element 5 Light scatterer 6 External terminal 7 Pin mark 11, 17, 18 Overall lens 11a, 18a Lens head 11b, 18b Lens base 12 Light scatterer 15, 15a, 15b, 15c Light scattering sealing part 16, 16a, 16b, 16c Individual lens

Claims (32)

A semiconductor device comprising a plurality of first recesses on which semiconductor elements are respectively mounted, and a second recess that encloses the plurality of first recesses,
A semiconductor device comprising a light scattering portion covering the plurality of first recesses.   2. The semiconductor device according to claim 1, wherein each of the first recesses has a depth for accommodating a wire connected to the semiconductor element and a surface electrode of the semiconductor element.   The semiconductor device according to claim 1, wherein the light scattering portion is a light scattering body provided in the second recess.   The semiconductor device according to claim 3, wherein the light scatterer is a light scattering sheet.   The semiconductor device according to claim 3, wherein an entire lens that covers the plurality of first recesses is bonded to the second recess.   The semiconductor device according to claim 5, wherein the entire lens sandwiches the light scatterer.   The semiconductor device according to claim 1, wherein the light scattering portion is a light scattering sealing portion provided in the first recess.   The semiconductor device according to claim 7, wherein the light scattering sealing portion is formed of a light scattering material-containing resin.   The semiconductor device according to claim 7, wherein an individual lens is bonded to each of the plurality of first recesses.   10. The semiconductor device according to claim 9, wherein an entire lens that covers an individual lens bonded to each of the plurality of first recesses is bonded to the second recess.   3. The semiconductor device according to claim 1, wherein spread angles of wall surfaces of at least two first recesses among the plurality of first recesses are different from each other.   The semiconductor device according to claim 11, wherein the light scattering portion is a light scattering sealing portion provided in the first recess.   The semiconductor device according to claim 11, wherein an individual lens is bonded to each of the plurality of first recesses.   3. The semiconductor device according to claim 1, wherein the bottom surfaces of the plurality of first recesses are separated from each other, and the opening is common.   The semiconductor device according to claim 14, wherein the light scattering portion is a light scattering body provided in the second recess.   The semiconductor device according to claim 14, wherein the light scattering portion is a light scattering sealing portion provided in the first recess.   The semiconductor device according to claim 14, wherein an entire lens that covers the plurality of first recesses is bonded to the second recess.   The semiconductor device according to claim 1, wherein the semiconductor element is a semiconductor light emitting element.   The semiconductor device according to claim 18, wherein the semiconductor light emitting element is a light emitting diode.   The semiconductor device according to claim 18, comprising at least three first recesses on which the semiconductor light emitting elements are mounted.   21. The semiconductor device according to claim 20, wherein a red semiconductor light emitting element, a green semiconductor light emitting element, and a blue semiconductor light emitting element are mounted corresponding to each of the first recesses.   Corresponding to each of the first recesses, a blue semiconductor light emitting element, a blue semiconductor light emitting element, a red light emitting phosphor that emits red light when excited by blue light of the blue semiconductor light emitting element, a blue semiconductor light emitting element, and the blue semiconductor light emitting 21. The semiconductor device according to claim 20, further comprising a green light emitting phosphor that emits green light when excited by blue light of the element.   Corresponding to each of the first recesses, a blue semiconductor light emitting element, an ultraviolet semiconductor light emitting element, a red light emitting phosphor that emits red light when excited by ultraviolet light of the ultraviolet semiconductor light emitting element, an ultraviolet semiconductor light emitting element, and the ultraviolet semiconductor light emitting 21. The semiconductor device according to claim 20, further comprising a green light emitting phosphor that emits green light when excited by ultraviolet light of the element. A semiconductor device comprising at least two first recesses and a second recess containing the first recess,
A semiconductor device, wherein a semiconductor light emitting element is mounted in one first recess of the first recesses, and a semiconductor light receiving element is mounted in the other first recess.   25. The semiconductor device according to claim 24, wherein a light scattering sealing portion is provided in the first recess in which the semiconductor light emitting element is mounted.   26. The semiconductor device according to claim 24, wherein an individual lens is bonded to the first concave portion on which the semiconductor light emitting element is mounted.   27. The semiconductor device according to claim 24, wherein the semiconductor light emitting element is a white semiconductor light emitting element.   28. The semiconductor device according to claim 24, wherein the semiconductor light receiving element is configured to detect ultraviolet rays.   28. The semiconductor device according to claim 24, further comprising the first concave portion on which a red semiconductor light emitting element is mounted.   28. The semiconductor device according to any one of claims 24 to 27, further comprising the first concave portion on which an infrared semiconductor light emitting element is mounted. A semiconductor device comprising a plurality of first recesses each mounted with a semiconductor light receiving element and a second recess containing the plurality of first recesses,
Each of the plurality of first recesses has a resin sealing portion. 32. An electronic apparatus comprising the semiconductor device according to claim 1 mounted thereon.

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