JP2011077048A - Lighting apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lighting apparatus that uses light irradiation devices having superior heat radiative performance. <P>SOLUTION: The lighting apparatus has a horizontally long metal substrate 71, on which a plurality of light radiation devices 68 with built-in light-emitting diodes 65 are mounted in series connection, and a fold 71B, made of the metal substrate 71 for reflecting the light from the light radiation devices 68 around the mounting region of the metal substrate 71 on which the light radiation devices 68 are mounted; and the fold 71B is folded upward relative to the mounting area of the metal substrate 71, and has a flat part for placing a packing or an adhesive at the end of the fold 71B; and thereby solving the problem. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an illuminating device, and particularly to an illuminating device using a light irradiating device with good heat dissipation.

  First, when it is necessary to irradiate a large amount of light, an electric lamp or the like is generally used. However, there are cases where the light emitting element 2 is mounted on the printed circuit board 1 as shown in FIG.

  The light emitting element is mainly a light emitting diode formed of a semiconductor, but a semiconductor laser or the like is also conceivable.

  The light emitting element 2 is provided with two leads 3 and 4, the back surface (anode electrode or cathode electrode) of the light emitting diode 5 is fixed to one lead 3 with solder or the like, and the other lead 4 is The electrode (cathode electrode or anode electrode) on the surface of the light-emitting diode 5 is electrically connected via the metal thin wire 6. A transparent resin sealing body 7 that seals the leads 3 and 4, the light emitting diode 5, and the fine metal wires 6 is also formed as a lens.

  On the other hand, the printed circuit board 1 is provided with electrodes 8 and 9 for supplying power to the light emitting element 2, and the leads 3 and 4 are inserted into through holes provided therein, and the electrodes 3 and 9 are inserted through solder or the like. The light emitting element 2 is fixed and mounted.

  For example, Japanese Patent Laid-Open No. 9-252651 describes a light irradiation apparatus using this light emitting element.

  However, since the light-emitting element 2 described above is formed of a package in which the resin sealing body 7, the leads 3, 4 and the like are incorporated, there is a disadvantage that the size of the mounted substrate 1 is increased.

  Therefore, various companies have competed to develop various structures in order to realize miniaturization, thinning, and weight reduction, and recently called CSP (chip size package), a wafer scale CSP equivalent to the chip size, or a chip size. A slightly larger CSP has been developed.

  FIG. 11 shows a CSP 12 that employs a glass epoxy substrate 11 as a support substrate and is slightly larger than the chip size. Here, description will be made assuming that the light emitting diode 13 is mounted on the glass epoxy substrate 11.

  A first electrode (die pad) 14 and a second electrode 15 are formed on the surface of the glass epoxy substrate 11, and a first back electrode 16 and a second back electrode 17 are formed on the back surface. Then, the first electrode 14 and the first back electrode 16 are electrically connected through the through hole TH, and similarly, the second electrode 15 and the second back electrode 17 are electrically connected. Yes.

  The bare light emitting diode 13 is fixed to the upper surface of the die pad 14, and the electrode on the surface of the light emitting diode 13 and the first electrode 14 are connected via a metal wiring 18. A resin layer 19 is provided on the glass epoxy substrate 11 so as to cover the entire surface including the light emitting diode 13.

  The CSP 12 employs the glass epoxy substrate 11, but unlike the wafer scale CSP, the extending structure from the light emitting diode 13 to the back electrode 16 for external connection is simple and has the advantage that it can be manufactured at low cost. .

  Further, the manufacturing method of the CSP 12 will be described. First, as shown in FIG. 11 (A), a glass epoxy substrate 11 is prepared as a base material (support substrate), and copper foil ( Hereinafter, it is referred to as Cu foil.) 20 and 21 are pressure-bonded.

  Next, as shown in FIG. 11 (B), the Cu foil 20 on the region where the first electrode (die pad) 14, the second electrode 15, the first back electrode 16 and the second back electrode 17 are formed, An etching resistant resist film 22 is formed on 21, and the Cu foils 20 and 21 are patterned using the resist film 22. The patterning process may be performed separately for the front and back sides.

  Subsequently, as shown in FIG. 11C, a hole for the through hole TH is formed in the glass epoxy substrate using a drill or a laser, and the hole is plated to form the through hole TH. Through this through hole TH, the die pad 14 and the first back electrode 16, and the second electrode 15 and the second back electrode 17 are electrically connected.

  Furthermore, as shown in FIG. 11D, after Ni plating and Au plating are performed on the die pad 14 serving as a bonding post, the back surface (anode electrode or cathode electrode) of the light emitting diode 13 is die bonded.

  Finally, the electrode (cathode electrode or anode electrode) on the surface of the light-emitting diode 13 and the second electrode 15 are electrically connected via a fine metal wire 18 and covered with a resin layer 19.

  And it isolate | separates as each electric circuit element by dicing as needed. In FIG. 11, only one light emitting diode 13 is provided on the glass epoxy substrate 11, but actually, a large number of light emitting diodes 13 are provided in a matrix. Therefore, it separates with a dicing apparatus last.

  With the above manufacturing method, a CSP type electric circuit element employing the support substrate (glass epoxy substrate) 11 is completed. This manufacturing method is the same even when a flexible sheet is adopted as the support substrate.

JP-A-9-252651

  Here, in FIG. 11, the light-emitting diode 13, the first electrode 14, the second electrode 15, the first back electrode 16, the second back electrode 17, and the metal thin wire 18 are electrically connected to the outside, chip However, it has been difficult to provide an electric circuit element that can be reduced in size, thickness, and weight by using only these components.

  Moreover, the glass epoxy board | substrate 11 used as a support substrate is an unnecessary thing originally. However, because the electrodes are bonded together in the manufacturing method, it is adopted as a support substrate, and this glass epoxy substrate 11 cannot be eliminated.

  For this reason, the use of the glass epoxy substrate 11 increases the cost. Further, since the glass epoxy substrate 11 is thick, it becomes thick as a circuit element, and there is a limit in reducing the size, thickness, and weight. .

  Further, in the glass epoxy substrate 11 and the ceramic substrate, there is a problem that a through hole forming process for connecting electrodes on both sides is indispensable, and the manufacturing process becomes long.

  Further, since the heat dissipation of the substrate itself is inferior, there is a problem that the temperature rises as a whole. For this reason, the chip itself also has a problem that the temperature rises and the driving ability decreases.

  Further, the light emitting diode emits light also from the side surface, and there is light traveling toward the substrate side. However, since the substrate is a printed circuit board or a glass epoxy substrate, there is a problem in that all light cannot be efficiently emitted upward.

Therefore, in view of the above problems, the illumination device of the present invention includes a horizontally long metal substrate on which a plurality of light irradiation devices each including a light emitting diode are connected in series, and the metal substrate on which the light irradiation device is mounted. And a bent portion made of the metal substrate that reflects light from the light irradiation device in a peripheral portion of the mounting region,
The bent portion is bent upward with respect to the mounting area of the metal substrate, and the end of the bent portion has a flat portion for placing packing or an adhesive. .

  As is apparent from the above description, the present invention is a light irradiation device that is configured with the minimum necessary amount of an optical semiconductor element, a conductive path (conductive electrode), and a resin that can transmit light, and that does not waste resources. Therefore, it is possible to realize a light irradiation apparatus that has no extra components until completion and can significantly reduce the cost. In addition, by optimizing the coating thickness of the resin that can transmit light and the thickness of the conductive foil, it is possible to realize a light irradiation device that is very small, thin, and lightweight.

  Further, since only the back surface of the conductive path is exposed from the resin that can transmit light, the back surface of the conductive path can be immediately used for connection to the outside, and the advantage that the back electrode and the through hole of the conventional structure can be eliminated. Have And heat dissipation can be improved compared with the thing of the structure which mounts an optical semiconductor element on the conventional printed circuit board, and the drive capability of an optical semiconductor element can be improved.

  By constructing an illuminating device in which a plurality of such light irradiating devices are directly mounted on a metal substrate, heat dissipation is good, and a support substrate for mounting the light irradiating device can be eliminated, thereby reducing costs. The lighting device can be made smaller, thinner and lighter.

  In addition, since a bent portion that is bent upward to reflect the light of the optical semiconductor element is formed in the peripheral portion of the metal substrate, light from the optical semiconductor element is irradiated upward through the bent portion. Is done.

  Furthermore, since the upper part of the optical semiconductor element can be covered with a transparent plate using the bent portion, the lighting device can be configured with a minimum number of parts.

  Moreover, when mounting a light irradiation apparatus on a metal substrate, the melting temperature is set to be lower than the mold temperature when resin molding is performed, whereby a problem that the conductive electrode is peeled off from the mold resin can be suppressed.

  Furthermore, since each light irradiation apparatus is directly mounted on the metal substrate using a robot capable of moving in the horizontal direction and the vertical movement direction, workability is good. Further, since only good products can be mounted on the metal substrate, productivity is improved.

  Further, after covering each light irradiation device with a resin capable of transmitting light so as to fill the separation groove, the conductive foil on the side where the separation groove is not provided is removed to a predetermined position, and And separating each light irradiation device coated with a resin capable of transmitting light, so that each light irradiation device is not separated until the final stage, and therefore each conductive foil is used as one sheet. It can be used in the process and has good workability.

It is sectional drawing explaining the manufacturing method of the illuminating device which concerns on the 1st Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the illuminating device which concerns on the 1st Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the illuminating device which concerns on the 1st Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the illuminating device which concerns on the 1st Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the illuminating device which concerns on the 1st Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the illuminating device which concerns on the 1st Embodiment of this invention. It is a figure explaining the illuminating device which concerns on the 1st Embodiment of this invention. It is a figure explaining the illuminating device which concerns on the 1st Embodiment of this invention. It is sectional drawing explaining the illuminating device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the conventional illuminating device. It is a figure explaining the conventional illuminating device. It is a figure explaining the conventional illuminating device.

  Hereinafter, a lighting device and a manufacturing method thereof according to a first embodiment of the present invention will be described with reference to the drawings.

  In FIG. 1, 61 is a sheet-like conductive foil, and the material thereof is selected in consideration of the adhesiveness, bonding property and plating property of the brazing material. As the material, a conductive foil mainly composed of copper (Cu), A conductive foil mainly made of aluminum (Al) or a conductive foil made of an alloy such as iron (Fe) -nickel (Ni), Cu-Al, Al-Cu-Al, or the like is employed.

  The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of later etching, and a 150 μm copper foil is employed here. However, it is basically good if it is 300 μm or more and 10 μm or less. As will be described later, it is only necessary to form the separation groove 64 shallower than the thickness of the conductive foil 61.

  In addition, the sheet-like conductive foil 61 is prepared by being wound in a roll shape with a predetermined width, and this may be conveyed to each step described later, or a conductive foil cut into a predetermined size is prepared, You may convey to each process mentioned later.

  Then, half-etching is performed using a photoresist film 60 having an opening on the front surface side of the conductive foil 61 (the back side of the conductive foil 61 is not shown) as a mask, so that a predetermined region of the conductive foil 61 is half-etched. Thus, the separation groove 64 is formed. Incidentally, the depth of the separation groove 64 formed by this etching is, for example, 80 μm, and its side surface becomes a rough surface, so that the adhesiveness with an insulating resin 67 capable of transmitting light, which will be described later, is improved.

  In addition, after forming an Ag film 62 to be described later on the conductive foil 61, half etching may be performed using a photoresist film formed so as to completely cover the Ag film 62 as a mask.

  Further, the cross-sectional shape of the side wall of the separation groove 64 is different depending on the removing method. This removal process can employ wet etching, dry etching, laser evaporation, dicing, and the like.

  For example, in the case of wet etching, ferric chloride or cupric chloride is mainly used as the etchant, and the conductive foil 61 is dipped in the etchant or showered with the etchant. Since wet etching is generally non-anisotropic, the side surface has a curved structure.

  Furthermore, in the case of dry etching, etching can be performed anisotropically and non-anisotropically. At present, it is said that Cu cannot be removed by reactive ion etching, but it can be removed by sputtering. Further, depending on sputtering conditions, etching can be performed anisotropically or non-anisotropically.

  Further, in the laser, the separation groove can be formed by direct application of laser light. In this case, the side surface of the separation groove 64 is formed straight.

  Furthermore, in dicing, it is impossible to form a complicated bent pattern, but it is possible to form a grid-like separation groove.

  Next, in FIG. 2, a plating process is performed on each of the predetermined regions on the front surface and the back surface of the conductive foil 61. In the present embodiment, a film made of silver (Ag) plating (hereinafter referred to as Ag film 62) is formed as the conductive film 62. However, the present invention is not limited to this, and other materials include For example, gold (Au), Ni, Al, palladium (Pd), or the like. In addition, these corrosion-resistant conductive films have the characteristic that they can be used as they are as die pads and bonding pads. Furthermore, the Ag film 62 may be formed only on the surface of the conductive foil 61.

  For example, the Ag coating 62 adheres to Au and also to the brazing material. Therefore, if the Au coating is coated on the back surface of the chip, the chip can be thermocompression bonded to the Ag coating 62 on the conductive path 51 as it is, and the chip can be fixed via a brazing material such as solder. Furthermore, since an Au fine wire can be adhered to the Ag conductive film, wire bonding is also possible.

  Further, by forming the Ag film 62 on the conductive foil 61, light emitted from the optical semiconductor element 65 described later is reflected upward by the Ag film 62, and the upward light emission efficiency is improved.

  However, when the formation region of the Ag coating 62 becomes wide, a region where the conductive foil 61 and the insulating resin 67 are in contact with each other when the conductive foil 61 on which the optical semiconductor element 65 described later is sealed with the insulating resin 67. Decreases and causes peeling. This is because the adhesion rate between the Ag coating 62 and the insulating resin 67 is lower than the adhesion rate between the conductive foil 61 made of Cu and the insulating resin 67. Therefore, the formation region of the Ag coating 62 is arbitrarily set in consideration of the adhesion between the conductive foil 61 and the insulating resin 67 and the reflection efficiency of light from the light irradiation device by the Ag coating 62.

  Then, by pressing the conductive foil 61 (and the Ag coating 62) with a press or the like in a state where the Ag coating 62 is formed, the Ag coating 62 is glossed and irradiation (reflection) efficiency can be improved.

  Subsequently, in FIG. 3, the optical semiconductor element 65 is electrically connected and mounted on the conductive foil 61 in which the separation groove 64 is formed. Here, a light emitting diode is used as the optical semiconductor element 65, and the back surface of the optical semiconductor element 65 is die-bonded on a first conductive electrode (die pad) 51A described later. The surface and the second conductive electrode 51 </ b> B are wire-bonded by a thin metal wire 66. In the present embodiment, a cathode electrode on the back surface of the optical semiconductor element 65 is fixed on the first conductive electrode 51A, and an anode electrode on the surface of the optical semiconductor element 65 is wire-bonded on the second conductive electrode 51B with a thin metal wire 66. Yes. Even if the anode electrode of the optical semiconductor element 65 is fixed on the first conductive electrode 51A and the cathode electrode of the optical semiconductor element 65 is wire-bonded on the second conductive electrode 51B by the metal thin wire 66. I do not care.

  Next, in FIG. 4, the optical semiconductor element 65 on the conductive foil 61 is sealed and covered with an insulating resin 67 capable of transmitting light that transmits light emitted from the optical semiconductor element 65. In this step, the conductive foil 61 including the optical semiconductor element 65 and the separation groove 64 is sealed with a thermosetting silicone resin or epoxy resin by transfer molding using a mold (not shown). As described above, the resin needs to be capable of transmitting light, and so-called transparent resin, or resin that is opaque but can transmit light of a predetermined wavelength is used.

  In the description of the present embodiment, only one optical semiconductor element 65 is shown, but in reality, a large number of optical semiconductor elements 65 are provided in a matrix, and the resin 67 is capable of transmitting the light. When covering each optical semiconductor element 65, each optical semiconductor element 65 is individually molded. That is, when the resin 67 that can transmit light is molded, if a filler generally used for warpage prevention is mixed in the resin due to the property of the resin 67 that can transmit the light, the light is irregularly reflected. Therefore, since the filler cannot be used, it is necessary to mold each optical semiconductor element 65 (each light irradiation device 68 described later) individually.

  The feature of this step is that the conductive foil 61 becomes a support substrate until the insulating resin 67 that can transmit light is covered. And since heat dissipation is good compared with the thing of the structure which mounted the light emitting element 2 in the printed circuit board 1 like the past (refer FIG. 10), a drive capability can be improved.

  Furthermore, in the present invention, since the conductive foil 61 serving as a support substrate is a material necessary as an electrode material, there is an advantage that the constituent material can be omitted as much as possible and the cost can be reduced.

  Further, since the separation groove 64 is formed shallower than the thickness of the conductive foil 61, the conductive foil 61 is not individually separated as the conductive path 51. Therefore, when the insulating resin 67 that can be handled as a sheet-like conductive foil 61 and can transmit light is molded, there is an advantage that the work of transporting to the mold and mounting to the mold becomes very simple.

  Further, in FIG. 5, there is a step of chemically and / or physically removing the back surface of the conductive foil 61 and separating it as the conductive path 51. Here, the removing step is performed by polishing, grinding, etching, metal evaporation of laser, or the like.

  In the present embodiment, the conductive foil 61 is wet-etched using a photoresist film (not shown) formed on the entire surface on the front surface side, the conductive foil 61 on the back surface side, and the Ag film 62 as a mask, and below the separation groove 64. The conductive foil 61 is shaved to expose the insulating resin 67 that can transmit light, and the conductive paths 51 are separated. Accordingly, the surface of the conductive paths 51A and 51B (first conductive electrode and second conductive electrode) is exposed from the insulating resin 67 that can transmit light.

  In addition, the back surface of the conductive foil 61 may be shaved by about 50 to 60 μm by a polishing device or a grinding device, and the insulating resin 67 that can transmit light may be exposed from the separation groove 64, and in this case, the thickness is about 40 μm. The conductive path 51 is separated. Alternatively, the entire surface of the conductive foil 61 may be wet-etched until the insulating resin 67 that can transmit light is exposed, and then the entire surface may be shaved by a polishing or grinding apparatus to expose the insulating resin 67 that can transmit light. . In this case, it is possible to realize a flat light irradiation device in which the conductive path 51 is embedded in the insulating resin 67 capable of transmitting light, and the back surface of the insulating resin 67 capable of transmitting light and the back surface of the conductive path 51 substantially coincide.

  Furthermore, when the back surface of the conductive foil 61 is shaved by the polishing apparatus or the grinding apparatus described above and the respective conductive paths 51 are separated, a conductive material such as solder is deposited on the exposed conductive paths 51 as necessary. Alternatively, the conductive path 51 may be subjected to an antioxidant treatment. Moreover, you may coat antioxidant.

  Then, as shown in FIG. 6, there is a step of separating the light irradiation devices 68 adjacent to each other using a dicing device to complete the light irradiation device 68.

  Here, this separation process can be realized by cutting, chocolate break, etc. in addition to dicing. Here, when the chocolate break is adopted, the copper piece 69 is peeled off from both ends of the insulating resin 67 that can transmit the light that covers the light irradiation device 68 by a press machine indicated by a one-dot chain line in FIG. The irradiation device 68 is separated. In this case, the deburring process on the back surface is unnecessary as compared with dicing, cutting, etc., and there is an advantage that workability is good.

  The feature of this manufacturing method is that the conductive path 51 can be separated using the insulating resin 67 that can transmit light as a support substrate. The insulating resin 67 capable of transmitting light is a material necessary as a material for embedding the conductive path 51, and does not require a support-dedicated substrate during the manufacturing process. Therefore, it has the characteristics that it can be manufactured with a minimum amount of material and cost can be reduced.

  Here, FIG. 7 shows that the light irradiation devices 68 (light emitting diodes) are connected in series between the electrodes 30 formed on the metal substrate (circuit board) 71, and the current value passing through the light irradiation devices 68 is constant. The lighting device 40 is shown.

  First, the chip back surface (first electrode 51A) to be the cathode electrode (or anode electrode) of the light irradiation device 68 is fixed to the first electrode (30A) via the solder 72 (see FIG. 8A). The chip back surface (second electrode 51B) and the second electrode (30B), which are wire-bonded via the anode electrode (or cathode electrode) and the fine metal wire 66, are fixed to each other via solder. Further, the back surface of the chip (first electrode 51A) to be the cathode electrode (or anode electrode) of the next light irradiation device 68 is fixed to the second electrode (30B) via the solder 72, and the anode electrode (or cathode electrode). ) And the back surface of the chip (second electrode 51B) and the third electrode (30C), which are wire-bonded via the fine metal wire 66, are fixed via the solder 72. A series connection is realized by repeating this connection form.

  Here, as shown in FIG. 8A, in the present embodiment, in the step of fixing the light irradiation device 68 to the metal substrate 71, the melting temperature of the resin 67 that can transmit the light is molded. The solder 72 is used (approximately 140 ° C.) lower than the mold temperature (approximately 160 ° C.). For this reason, when the light irradiation device 68 is solder-bonded to the metal substrate 71, the resin 67 thermally expands and a gap or a crack is generated, so that the conductive electrodes 51A and 51B which are metal electrodes of the light irradiation device 68 are formed. It is possible to suppress a problem such as peeling from the molded resin 67. As an example of the solder 72 having such a low melting temperature, lead (Pb) is not used and tin (Sn) -based solder (in addition, bismuth (Bi) or antimony (Sb) is contained) is contained. There is. The resin mold temperature and the solder melting temperature may be substantially the same, or the solder melting temperature may be higher.

  Moreover, in order to use the electrode which consists of copper foil as a reflecting plate, the surface is coat | covered with Ni. Further, the light irradiating device 68 is electroded by, for example, a robot having an arm that can move in the X-Y-Z (X direction-Y direction-vertical direction) direction that enables movement in the horizontal direction and the vertical movement direction. Arranged at a predetermined position.

  According to this structure, the heat generated from the light irradiating device 68 is radiated through the metal substrate 71, so that the drive current of the light irradiating device 68 can be increased.

  Although not shown in the drawings, the illumination device 40 having a good heat dissipation can be realized even if the light irradiation devices 68 are connected in parallel, or a combination of parallel connection and series connection is used.

  Here, when using the light emission panel which consists of the above illuminating devices 40 as a light source for plant cultivation, since each light irradiation apparatus 68 can be directly mounted on the metal substrate 71, workability | operativity is good.

  That is, when configuring such a light-emitting panel as a plant cultivation light source, conventionally (see FIG. 12), the optical semiconductor element 25 is once mounted on the first metal substrate 23 having a small size. A plurality of metal substrates 23 are mounted on a second metal substrate 24 having a larger size to form a light emitting panel having a desired size.

  Here, as shown in FIG. 12, twelve electrodes 30 are formed on the first substrate 23, and the cathode electrode (or anode) of the optical semiconductor element 25 (light emitting diode) is formed on the first electrode (30A). The back surface of the chip to be an electrode) is fixed, and the anode electrode (or cathode electrode) and the second electrode (30B) are connected by a thin metal wire 26. Further, the chip back surface of the next optical semiconductor element 25 is fixed to the second electrode (30B), and the electrode on the chip surface and the third electrode (30C) are connected by a thin metal wire 26. By repeating this connection mode, series connection is realized. Further, a plurality of metal substrates 23 are connected using solder, thereby forming a light emitting panel having a desired size. An insulating resin 27 is potted so as to cover the optical semiconductor element 25 and the fine metal wire 26.

  As described above, in the conventional lighting device (light emitting panel), the optical semiconductor element 25 is once mounted on the first metal substrate 23, and a plurality of the metal substrates 23 are further mounted on the second metal substrate 24. Thus, a light emitting panel having a desired size was manufactured. The optical semiconductor element 25 is once mounted on the first metal substrate 23 as described above when the anode electrode (or cathode electrode) of the optical semiconductor element 25 and each electrode are connected by the thin metal wire 26. This is due to the wire bonding apparatus.

  That is, the substrate size that can be placed on the work table of a wire bonding apparatus that is normally used is at most about 150 mm × 150 mm. Therefore, when forming a large illuminating device used for plant cultivation having a substrate size larger than that (for example, about 500 mm × 500 mm), an optical semiconductor device 25 is mounted on a small substrate 23 and light After performing the wire bonding process on the semiconductor device 25, it is necessary to bond each substrate 23 onto the substrate 24 having a desired size via an adhesive and to solder the substrates 23 to each other.

  On the other hand, in the present invention, as described above, the cathode electrode (or anode electrode) of the optical semiconductor element 65 constituting the light irradiation device 68 (the optical semiconductor element 65 (light emitting diode) is sealed with resin) is used. The chip back surface, the anode electrode (or cathode electrode), and the chip back surface connected by wire bonding via the thin metal wire 66 are fixed to each electrode 30, and similarly, the cathode electrode of the next optical semiconductor element 65 (light emitting diode). It is only necessary to fix the back surface of the chip to be (or the anode electrode) and the back surface of the chip that is wire-bonded and connected to the anode 30 (or the cathode electrode) to the respective electrodes 30 via the fine metal wires 66. Since there is no wire bonding work, there is no restriction caused by a conventional wire bonding apparatus. Furthermore, the accuracy allowed in the wire bonding apparatus is about 120 mm x 120 mm when using Au wire, and about 125 mm x 125 mm when using Al wire, and the maximum is 150 mm x 150 mm. The accuracy of the mounting apparatus (mounting robot having an arm movable in the X, Y, and Z directions) is approximately 250 mm × 250 mm, and is allowed to be up to about 500 mm × 500 mm.

  As described above, when the light irradiation device 68 that is a finished product is incorporated as a set on the metal substrate 71, the work accuracy becomes loose. Therefore, each light irradiation device 68 is mounted directly on the large-sized metal substrate 71. Workability is improved.

  Further, in the present invention, since the light irradiation device 68 is mounted directly on the metal substrate 71, the heat radiation is good, the support substrate is not required, the cost can be reduced, and the size, thickness and weight can be reduced. Can be achieved.

  Furthermore, when a plurality of light emitting diodes 25 are mounted on the first metal substrate 23 as described above, and each substrate 23 is further bonded to the second metal substrate 24 using an adhesive or the like, If even one of the light emitting diodes 25 on the substrate 23 is defective (does not emit light), there is also a problem that all the light emitters on the metal substrate 24 cannot be used.

  However, in the present invention, since each completed light irradiation device 68 is directly mounted on the metal substrate 71 using a robot, only non-defective products can be mounted, and productivity is improved.

  Further, in the present embodiment, the optical semiconductor element 25 is described in which the cathode electrode or the anode electrode is configured on the back surface and the anode electrode or the cathode electrode is configured on the top surface, but FIG. As shown in FIG. 2, the anode electrode 73A and the cathode electrode 73B are respectively provided on the upper surface of the optical semiconductor element 25A, and the electrodes 73A and 73B are electrically connected to the first conductive electrode 51C or the second conductive electrode 51D through the thin metal wires 66A. It is also possible to connect them. An example of the optical semiconductor element 25A having such a configuration is a blue diode.

  Hereinafter, a second embodiment of the metal substrate will be described with reference to FIG.

  Here, the feature of the second embodiment is that the metal substrate 71A on which the light irradiation device 68 is mounted has an upper portion in order to reflect the light from the light irradiation device 68 (the optical semiconductor element 25) to the periphery thereof. That is, the bent portion 71B is bent. And the light from the said optical semiconductor element 25 is irradiated more upwards via this bending part 71B. The bent portion 71B is formed by squeezing with a press or the like.

  Further, a flattened portion is formed at the end of the bent portion 71B, and a transparent plate 73 such as a glass substrate is placed on the flat portion, and in this state, the metal substrate 71A and the transparent plate 73 are rubber-packed. The lighting device 40 </ b> A as a light-emitting panel having a desired size is completed by fixing through a fixture 74 such as the above. Note that dry air is sealed in the lighting device 40A. Moreover, as a fixing tool which fixes the said metal substrate 71A and the transparent plate 73, you may fix with a screw. Furthermore, when the substrate 71A and the transparent plate 73 are fixed, a gap between them is filled by inserting a cushioning material (packing) such as rubber or sponge. Furthermore, you may fix both with an adhesive agent.

  As described above, in the present embodiment, the metal substrate 71A itself is squeezed so that the light from the optical semiconductor element 25 can be reflected further upward. Therefore, the irradiation efficiency can be further improved as compared with the case where the flat metal substrate 71 is used as in the first embodiment. Even when the flat metal substrate 71 as described above is used, the light from the optical semiconductor element 25 can be reflected upward, for example, in the vicinity of the light irradiation device 68 or at least in the periphery of the metal substrate 71. By forming the reflector, the irradiation efficiency can be improved. In this case, however, the number of components constituting the illumination device 40 increases by the amount required for the reflector, resulting in an increase in cost. Connected.

  Further, since the bent portion 71B is configured on the metal substrate 71A, the transparent device 73 is placed on the flat portion of the bent portion 71B when the upper part of the light irradiation device 68 is covered in the illumination device of this embodiment. It is only necessary to fix the metal substrate 71A and the transparent plate 73 using the fixture 74, and the lighting device can be configured with a minimum number of parts.

  As is apparent from the above description, the present invention is a light irradiation device that is configured with the minimum necessary amount of an optical semiconductor element, a conductive path (conductive electrode), and a resin that can transmit light, and that does not waste resources. Therefore, it is possible to realize a light irradiation apparatus that has no extra components until completion and can significantly reduce the cost. In addition, by optimizing the coating thickness of the resin that can transmit light and the thickness of the conductive foil, it is possible to realize a light irradiation device that is very small, thin, and lightweight.

  Further, since only the back surface of the conductive path is exposed from the resin that can transmit light, the back surface of the conductive path can be immediately used for connection to the outside, and the advantage that the back electrode and the through hole of the conventional structure can be eliminated. Have And heat dissipation can be improved compared with the thing of the structure which mounts an optical semiconductor element on the conventional printed circuit board, and the drive capability of an optical semiconductor element can be improved.

  By constructing an illuminating device in which a plurality of such light irradiating devices are directly mounted on a metal substrate, heat dissipation is good, and a support substrate for mounting the light irradiating device can be eliminated, thereby reducing costs. The lighting device can be made smaller, thinner and lighter.

  In addition, since a bent portion that is bent upward to reflect the light of the optical semiconductor element is formed in the peripheral portion of the metal substrate, light from the optical semiconductor element is irradiated upward through the bent portion. Is done.

  Furthermore, since the upper part of the optical semiconductor element can be covered with a transparent plate using the bent portion, the lighting device can be configured with a minimum number of parts.

  Moreover, when mounting a light irradiation apparatus on a metal substrate, the melting temperature is set to be lower than the mold temperature when resin molding is performed, whereby a problem that the conductive electrode is peeled off from the mold resin can be suppressed.

  Furthermore, since each light irradiation apparatus is directly mounted on the metal substrate using a robot capable of moving in the horizontal direction and the vertical movement direction, workability is good. Further, since only good products can be mounted on the metal substrate, productivity is improved.

  Further, after covering each light irradiation device with a resin capable of transmitting light so as to fill the separation groove, the conductive foil on the side where the separation groove is not provided is removed to a predetermined position, and And separating each light irradiation device coated with a resin capable of transmitting light, so that each light irradiation device is not separated until the final stage, and therefore each conductive foil is used as one sheet. It can be used in the process and has good workability.

  As is apparent from the above description, the present invention is a light irradiation device that is configured with the minimum necessary amount of an optical semiconductor element, a conductive path (conductive electrode), and a resin that can transmit light, and that does not waste resources. Therefore, it is possible to realize a light irradiation apparatus that has no extra components until completion and can significantly reduce the cost. In addition, by optimizing the coating thickness of the resin that can transmit light and the thickness of the conductive foil, it is possible to realize a light irradiation device that is very small, thin, and lightweight.

  Further, since only the back surface of the conductive path is exposed from the resin that can transmit light, the back surface of the conductive path can be immediately used for connection to the outside, and the advantage that the back electrode and the through hole of the conventional structure can be eliminated. Have And heat dissipation can be improved compared with the thing of the structure which mounts an optical semiconductor element on the conventional printed circuit board, and the drive capability of an optical semiconductor element can be improved.

  By constructing an illuminating device in which a plurality of such light irradiating devices are directly mounted on a metal substrate, heat dissipation is good, and a support substrate for mounting the light irradiating device can be eliminated, thereby reducing costs. The lighting device can be made smaller, thinner and lighter.

  In addition, since a bent portion that is bent upward to reflect the light of the optical semiconductor element is formed in the peripheral portion of the metal substrate, light from the optical semiconductor element is irradiated upward through the bent portion. Is done.

  Furthermore, since the upper part of the optical semiconductor element can be covered with a transparent plate using the bent portion, the lighting device can be configured with a minimum number of parts.

  Moreover, when mounting a light irradiation apparatus on a metal substrate, the melting temperature is set to be lower than the mold temperature when resin molding is performed, whereby a problem that the conductive electrode is peeled off from the mold resin can be suppressed.

  Furthermore, since each light irradiation apparatus is directly mounted on the metal substrate using a robot capable of moving in the horizontal direction and the vertical movement direction, workability is good. Further, since only good products can be mounted on the metal substrate, productivity is improved.

  Further, after covering each light irradiation device with a resin capable of transmitting light so as to fill the separation groove, the conductive foil on the side where the separation groove is not provided is removed to a predetermined position, and And separating each light irradiation device coated with a resin capable of transmitting light, so that each light irradiation device is not separated until the final stage, and therefore each conductive foil is used as one sheet. It can be used in the process and has good workability.

40 lighting device 40A lighting device 51 conductive path (electrode)
61 Conductive foil 62 Conductive coating 64 Separation groove 65 Optical semiconductor element 66 Metal thin wire 67 Resin 68 capable of transmitting light Light irradiation device 71A Metal substrate 71B Bending portion 72 Solder 73 Transparent plate 74 Fixture

Claims (3)

From the light irradiation device to the peripheral portion of the mounting region of the metal substrate where the light irradiation device including a light emitting diode is mounted in series and mounted in series, and the light irradiation device is mounted. And a bending unit made of the metal substrate that reflects the light of
The foldable portion is bent upward with respect to the mounting region of the metal substrate, and an end portion of the foldable portion has a flat portion on which packing or an adhesive is placed. . The back surface of the light irradiation device is provided with a first back electrode electrically connected to the anode of the light emitting diode and a second back electrode electrically connected to the cathode of the light emitting diode, and the metal The illuminating device of Claim 1 connected with the electrode provided in the board | substrate. The light irradiation device is provided with a resin that transmits light, and is a solder having a melting point lower than the mold temperature of the resin. The first back electrode and the second back electrode are electrodes provided on the metal substrate. The lighting device according to claim 2, connected to

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