JP5447928B2 - Mounting substrate and method of manufacturing thin light emitting device using the same - Google Patents

Mounting substrate and method of manufacturing thin light emitting device using the same Download PDF

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JP5447928B2
JP5447928B2 JP2009143835A JP2009143835A JP5447928B2 JP 5447928 B2 JP5447928 B2 JP 5447928B2 JP 2009143835 A JP2009143835 A JP 2009143835A JP 2009143835 A JP2009143835 A JP 2009143835A JP 5447928 B2 JP5447928 B2 JP 5447928B2
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conductive foil
electrode portion
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cell
cells
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JP2011003626A (en
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悟郎 成田
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株式会社エレメント電子
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Description

本発明は、薄い導電箔の１主面に電解メッキで形成した多数個の電極を設けた実装基板とそれを用いて導電箔上のマウント部に発光素子を実装する薄型発光装置の製造方法に関する。   The present invention relates to a mounting substrate provided with a large number of electrodes formed by electrolytic plating on one main surface of a thin conductive foil, and a method of manufacturing a thin light emitting device using the mounting substrate to mount a light emitting element on a mount portion on the conductive foil. .

図７に発光素子から発せられる光がベース基板内に吸収されることを防止し、発光損失を抑えて全体の輝度の向上を図る発光装置が示されている。   FIG. 7 shows a light-emitting device that prevents light emitted from a light-emitting element from being absorbed into a base substrate and suppresses light-emitting loss to improve overall luminance.

この発光装置は発光素子１００、ベース基板２００、基板電極３００、接続電極部４００、光反射部５００、孔部６００およびメッキ層７００から構成される。発光素子１００は三族窒化物系化合物半導体発光素子である。ベース基板２００はポリイミド、ガラスエポキシあるいはＢＴレジン等の樹脂で形成された絶縁性の基板であり、当該表面から裏面にかけて形成される銅箔膜からなる一対の基板電極部３００と、発光素子１００の載置面と反対側の面に形成される銅箔膜からなる光反射部５００と、一対の基板電極部３００が対向する絶縁部をベース基板２００の厚み方向に開設した孔部６００と、この孔部６００から露出する光反射部５００の露出面と孔部６００の内周面とに形成される金または銀によるメッキ層７００で作られている。また、ベース基板２００の裏面に設けられ、基板電極部３００と導通する導電膜からなる電極は、マザーボード等の装置基板に実装する接続電極部４００である。   The light emitting device includes a light emitting element 100, a base substrate 200, a substrate electrode 300, a connection electrode portion 400, a light reflecting portion 500, a hole portion 600, and a plating layer 700. The light emitting device 100 is a group III nitride compound semiconductor light emitting device. The base substrate 200 is an insulating substrate formed of a resin such as polyimide, glass epoxy, or BT resin. The base substrate 200 includes a pair of substrate electrode portions 300 made of a copper foil film formed from the front surface to the back surface, and the light emitting element 100. A light reflecting portion 500 made of a copper foil film formed on the surface opposite to the mounting surface, a hole portion 600 having an insulating portion opposed to the pair of substrate electrode portions 300 in the thickness direction of the base substrate 200, and It is made of a plated layer 700 of gold or silver formed on the exposed surface of the light reflecting portion 500 exposed from the hole portion 600 and the inner peripheral surface of the hole portion 600. Further, the electrode made of a conductive film that is provided on the back surface of the base substrate 200 and is electrically connected to the substrate electrode unit 300 is a connection electrode unit 400 that is mounted on a device substrate such as a motherboard.

特開２００５−１７５３８７号公報JP 2005-175387 A

上述した発光装置では、以下のような問題点がある。   The light emitting device described above has the following problems.

例えば携帯端末機器などでは小型化、薄型化が進み、発光装置の薄型化は市場要求である。   For example, in portable terminal devices and the like, miniaturization and thinning have progressed, and thinning of light emitting devices is a market requirement.

しかし、図７の如き発光装置では、発光素子１００がベース基板２００上に配置される構造であるため、実装後の厚みは少なくとも発光素子１００厚みとベース基板２００の厚みの総和以上は必要である。ベース基板２００の材料を改良するなどして薄型化も進んではいるが、支持材としてある程度の強度を確保する必要があり、製造工程における取り扱いの容易さ等も考慮するとこれ以上の大幅な薄型化には限界があった。   However, since the light emitting device as shown in FIG. 7 has a structure in which the light emitting element 100 is disposed on the base substrate 200, the thickness after mounting needs to be at least the sum of the thickness of the light emitting element 100 and the thickness of the base substrate 200. . Although thinning is progressing by improving the material of the base substrate 200, it is necessary to ensure a certain level of strength as a support material. Considering the ease of handling in the manufacturing process, etc., the thickness is further reduced significantly. There were limits.

また、ベース基板２００を用いると、その両面に基板電極３００と接続電極部４００とが必要となり、両電極を接続するためにスルーホール電極が不可欠であり、１セル当たりの基板面積も小さくできず、スルーホールメッキなど製造工程数も多くなってしまう。   Further, when the base substrate 200 is used, the substrate electrode 300 and the connection electrode portion 400 are required on both surfaces thereof, and through-hole electrodes are indispensable for connecting both electrodes, and the substrate area per cell cannot be reduced. In addition, the number of manufacturing processes such as through-hole plating increases.

一方、上記した構成の発光装置を一括して多数個製造する製造方法として、１枚の基板に複数個の装置を構成する導電パターンを配置し、この導電パターンに回路素子を接続して樹脂封止した後に、導電パターンおよび封止樹脂をダイシングして切断することで個々の発光装置に分離する方法がある。しかしながら、この方法であると、高速で回転するカットソーにより導電パターンを切断することでバリが発生する恐れがある。この様にバリが発生すると、外観性が損なわれるだけではなく、実装時の安定性が阻害されたり、実装後のショートが発生する恐れがある。   On the other hand, as a manufacturing method for manufacturing a large number of light emitting devices having the above-described configuration, conductive patterns constituting a plurality of devices are arranged on a single substrate, and circuit elements are connected to the conductive patterns to encapsulate the resin. After stopping, there is a method of separating the individual light emitting devices by dicing and cutting the conductive pattern and the sealing resin. However, this method may cause burrs by cutting the conductive pattern with a cutting saw that rotates at high speed. When such burrs are generated, not only the appearance is impaired, but also the stability during mounting may be hindered or a short circuit after mounting may occur.

本発明は上記した問題に鑑みて成されたものであり、本発明の目的はバリの発生を抑止しつつ、一括して多数の発光装置を製造することを可能とする実装基板およびそれを用いた薄型発光装置の製造方法を提供することにある。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a mounting substrate capable of manufacturing a large number of light-emitting devices in a lump while suppressing the occurrence of burrs, and the use thereof. Another object of the present invention is to provide a method for manufacturing a thin light emitting device.

本発明の実装基板は、導電箔の上面に列状に多数個のセルを隣接して配列されると共に、電解メッキで形成された第１電極部とマウント部に近接した第２電極部とを設けた前記セルと、前記第１電極部と前記第２電極部との間の前記導電箔の上面に付着し且つ前記導電箔を補強し、および前記セルと前記セルとが隣接した境界において前記第１電極部及び第２電極部と前記導電箔を分離する除去領域の上面に付着し且つ前記導電箔を補強する液状樹脂と、隣接する列の前記第１電極部と前記第２電極部との間に位置し、前記セルと前記セルの境界を通って前記導電箔を貫通して設けられ、隣接する前記列を分離する分離用スリット孔と、前記セル内を通り前記第１電極部と前記第２電極部の間に位置し、前記分離用スリット孔に並設して設けられ且つ前記第１電極部と前記第２電極部が電気的に分離される様に前記導電箔を貫通して設けられた絶縁用スリット孔と、前記絶縁用スリット孔および前記除去領域を覆って設けられ、前記液状樹脂に対応する位置を覆い且つ前記導電箔を補強する充填樹脂とを具備し、同じ列に含まれる前記セル同士の境界にて前記導電箔が除去されることにより、隣接する一方の前記セルに含まれる前記導電箔と、隣接する他方の前記セルに含まれる前記導電箔とが分離されていることを特徴とする。
Mounting substrate of the present invention, the upper surface of the conductive foil with are arranged adjacent the plurality of cells in rows, and a second electrode portion adjacent to the first electrode portion and a mounting portion which is formed by electrolytic plating and provided said cell, said in the adhering to the upper surface of the conductive foil and to reinforce the conductive foil, and the boundary of said cell and said cell is adjacent between the second electrode portion and the first electrode portion a liquid resin to reinforce and and the conductive foil adhered to the upper surface of the removal region separating the conductive foil and the first electrode portion and the second electrode portion, and the first electrode of the adjacent row and the second electrode portion And a separation slit hole that is provided through the conductive foil through the boundary between the cell and the cell and separates the adjacent rows, and the first electrode portion that passes through the cell. And the second electrode part, and provided in parallel with the separation slit hole A and the first electrode portion and the second electrode portion is electrically isolated by the conductive foil insulating slit hole provided through the as Re, Tsu covering the insulating slit hole and the removal area provided Te, comprising a filling resin for reinforcing and the conductive foil covers the position corresponding to the liquid resin, by the conductive foil at the boundary of the cell with each other included in the same row is removed, the adjacent The conductive foil contained in one of the cells is separated from the conductive foil contained in the other adjacent cell.

本発明の薄型発光装置の製造方法は、導電箔の上面に、第１電極部とマウント部に近接した第２電極部とから構成されるセルとなる領域が露出するようにメッキレジスト層を形成する工程と、前記メッキレジスト層をマスクとして前記導電箔に選択的に金属メッキを施し、多数個の前記セルを列状に形成する工程と、前記メッキレジスト層を除去して前記第１及び第２電極部と前記マウント部を除いて前記導電箔上に液状樹脂を付着する工程と、前記導電箔を下面から選択的にエッチングして、前記各セルの前記第１及び第２電極部を電気的に分離するように前記導電箔を貫通する絶縁用スリット孔と、隣接した前記列のセルと前記列のセルの境界で離間するように前記導電箔とその上の前記金属メッキを貫通する分離用スリット孔を設けて実装基板を形成する工程と、前記絶縁用スリット孔を前記導電箔の下面から被覆する共に、前記液状樹脂に対応する位置を覆い且つ前記導電箔を補強する充填樹脂を形成する工程と、同じ列に含まれて隣接する前記セル同士を連結する連結部分の前記導電箔を、ウェットエッチングにより除去し、前記セル同士の境界において前記第１電極部及び前記第２電極部を分離する除去領域を形成する工程と、前記除去領域に前記充填樹脂を埋設する工程と、前記マウント部に発光素子を固着し、前記発光素子の電極と前記第１電極部とをボンディングワイヤで接続する工程と、前記各セルに含まれる前記発光素子が列毎に被覆されるように樹脂を形成する工程と、前記除去領域にて、前記実装基板および前記樹脂を切断することで、前記セルを個別に分離する工程と、を具備することを特徴とする。
In the thin light emitting device manufacturing method of the present invention, the plating resist layer is formed on the upper surface of the conductive foil so that a region to be a cell composed of the first electrode portion and the second electrode portion close to the mount portion is exposed. A step of selectively metal-plating the conductive foil using the plating resist layer as a mask to form a large number of the cells in a row, and removing the plating resist layer to remove the first and first layers. A step of depositing a liquid resin on the conductive foil except for the two-electrode portion and the mount portion, and selectively etching the conductive foil from the lower surface to electrically connect the first and second electrode portions of each cell. Insulating slit holes penetrating through the conductive foil so as to be separated from each other, and separating through the conductive foil and the metal plating thereon so as to be separated at the boundary between the cells in the adjacent row and the cells in the row With slit holes for The same row as the step of forming the mounting substrate, the step of covering the insulating slit hole from the lower surface of the conductive foil, and forming the filling resin that covers the position corresponding to the liquid resin and reinforces the conductive foil The conductive foil in the connecting portion that connects the adjacent cells included in each other is removed by wet etching to form a removal region that separates the first electrode portion and the second electrode portion at the boundary between the cells. A step of embedding the filling resin in the removal region, a step of fixing a light emitting element to the mount part, and connecting an electrode of the light emitting element and the first electrode part with a bonding wire, The step of forming a resin so that the light emitting elements included in the cell are covered for each column, and cutting the mounting substrate and the resin in the removal region to individually separate the cells. Characterized by comprising the a step of separating.

本発明の実装基板によれば、以下の効果が得られる。   According to the mounting substrate of the present invention, the following effects can be obtained.

本発明によれば、第１電極部と第２電極部とから成るセルを実装基板に列状に設けると共に、セル同士の境界部に於いて各電極部を構成する導電箔を除去している。この様にすることで、各セルの境界にて実装基板を切断しても、切断される領域にはレジスト等の樹脂材料のみが存在しており、金属から成る導電箔は位置していない。このことから、実装基板を切断することによりバリは発生しないので、バリに起因した諸問題が回避される。また、従来に於いては、作業効率を高めるために分離時のカットソーの移動速度を高速にすると、バリの問題が顕在化していたが、本発明ではバリの心配なく高速に分離工程を行うことが可能となる。   According to the present invention, the cells comprising the first electrode portion and the second electrode portion are provided in a row on the mounting substrate, and the conductive foil constituting each electrode portion is removed at the boundary portion between the cells. . By doing so, even if the mounting substrate is cut at the boundary of each cell, only the resin material such as a resist exists in the cut region, and the conductive foil made of metal is not located. From this, since the burr | flash does not generate | occur | produce by cut | disconnecting a mounting board | substrate, the various problems resulting from a burr | flash are avoided. In addition, in the past, if the cutting saw moving speed at the time of separation was increased to increase work efficiency, the problem of burrs became apparent, but in the present invention, the separation process should be performed at high speed without worrying about burrs. Is possible.

更に、各セルの境界にて導電箔が除去された除去領域では、液状樹脂および半田レジストから成る樹脂材料が設けられている。従って、この樹脂材料を介して列状に配置された各セルが一体的に帯状に保持されているので、各セルは最後までバラバラに成らず一枚の板状態を呈しており取り扱いが容易である。   Further, a resin material made of a liquid resin and a solder resist is provided in the removal region where the conductive foil is removed at the boundary of each cell. Therefore, since the cells arranged in a row through the resin material are integrally held in a band shape, each cell does not fall apart until the end and is in a single plate state and is easy to handle. is there.

更にまた、本発明によれば、上記したセルを実装基板に列状に配置することで、以下の効果が奏される。   Furthermore, according to the present invention, the following effects can be achieved by arranging the above-described cells in a line on the mounting substrate.

第１に、実装基板は導電箔とその表面に選択的に形成した電解メッキで形成した第１電極部と第２電極部で形成されるので、導電箔が１８μｍ、第１及び第２電極部のメッキ厚を１５〜２０μｍとすれば４０μｍ以下に形成され、極めて薄型の支持基板レスの実装基板を実現できる。   First, since the mounting substrate is formed of a conductive foil and a first electrode portion and a second electrode portion formed by electroplating selectively formed on the surface thereof, the conductive foil is 18 μm, and the first and second electrode portions. If the plating thickness is 15 to 20 μm, it is formed to be 40 μm or less, and a very thin mounting board without a supporting substrate can be realized.

第２に、実装基板に列状に第１電極部と第２電極部とを多数個隣接して配列するので、１列に多数のセルを集積でき、隣接列とは分離用スリット孔で離間をさせているので、隣接列との間隔も従来の１／５の０．２ｍｍを実現して極めて狭くできる。これにより実装基板１枚当たりのセルの数を従来より１４４．７％に増加でき、生産効率とコストを大幅に向上することができる。   Second, since a large number of first electrode portions and second electrode portions are arranged adjacent to each other in a row on the mounting substrate, a large number of cells can be integrated in one row and separated from adjacent rows by separation slit holes. Therefore, the distance between adjacent rows can be made extremely narrow by realizing a conventional 1/5 of 0.2 mm. As a result, the number of cells per mounting board can be increased to 144.7% compared to the prior art, and production efficiency and cost can be greatly improved.

第３に、実装基板のスタート材料である導電箔は最終製品まで残存し、第１及び第２電極部も必要箇所のみ電解メッキで形成するので、製造工程で無駄に捨てる原材料がほとんどなく、環境に優しい生産が実現できる。   Third, the conductive foil, which is the starting material for the mounting substrate, remains until the final product, and the first and second electrode parts are also formed by electrolytic plating only at the necessary locations, so there is almost no raw material to be wasted in the manufacturing process, and the environment -Friendly production can be realized.

第４に、実装基板は導電箔がベースになっており、製造工程中に外部からの力で変形しやすいので、列を複数のブロックに区分をして列を設けない共通の導電箔を残すことで実装基板の補強を行える。   Fourth, since the mounting substrate is based on conductive foil and is easily deformed by external force during the manufacturing process, the row is divided into a plurality of blocks, leaving a common conductive foil that does not have a row. In this way, the mounting board can be reinforced.

第５に、マウント部にはニッケルメッキ層と、金または銀メッキ層が積層され、反対主面からは充填樹脂で覆われているので、支持基板が存在しないマウント部に発光素子を載置できるように強度を確保できる。   Fifth, a nickel plating layer and a gold or silver plating layer are laminated on the mount portion, and the opposite main surface is covered with a filling resin, so that the light emitting element can be placed on the mount portion where there is no support substrate. Thus, the strength can be ensured.

第６に、実装基板は導電箔、第１及び第２電極部を一体に形成されるので、極めて薄い材料にも拘わらずマウント部に固着される発光素子からの発熱を直接的に導電箔全体に広げることができ、放熱性を向上できることができる。   Sixth, since the mounting substrate is formed integrally with the conductive foil and the first and second electrode portions, the entire conductive foil directly generates heat from the light emitting element fixed to the mount portion despite the extremely thin material. The heat dissipation can be improved.

第７に、マウント部、第１及び第２電極部に設けられた金または銀メッキ層は、発光素子の発光素子のリフレクタとして共用することができる。   Seventhly, the gold or silver plating layer provided on the mount portion and the first and second electrode portions can be shared as a reflector of the light emitting element of the light emitting element.

本発明の製造方法によれば、第１に、実装基板を薄い導電箔から出発して作るので最小限の材料で実現でき、実装基板の厚みを４０μｍ以下と薄く形成することで薄型発光装置の製造方法が実現できる。   According to the manufacturing method of the present invention, first, since the mounting substrate is made from a thin conductive foil, the mounting substrate can be realized with a minimum amount of material, and the thickness of the mounting substrate can be reduced to 40 μm or less to reduce the thickness of the thin light emitting device. A manufacturing method can be realized.

第２に、第１電極部及び第２電極部を電解メッキで導電箔上に選択的に形成し、絶縁用スリット孔及び分離用スリット孔は最小限のエッチングに留めているので、導電箔などの原材料を無駄にしないで最小の実装基板及び薄型発光装置が実現できる。   Second, the first electrode portion and the second electrode portion are selectively formed on the conductive foil by electrolytic plating, and the insulating slit hole and the separation slit hole are kept to a minimum etching, so that the conductive foil, etc. The minimum mounting substrate and thin light emitting device can be realized without wasting raw materials.

第３に、変形に弱い導電箔を第２電極部、液状樹脂、充填樹脂を用いて補強するので、支持基板レスの実装基板を用いて薄型発光装置の製造方法を実現できる。   Thirdly, since the conductive foil that is weak against deformation is reinforced by using the second electrode portion, the liquid resin, and the filling resin, it is possible to realize a method for manufacturing a thin light emitting device using a mounting substrate without a support substrate.

第４に、液状樹脂と透明樹脂の樹脂同士の馴染みを利用して発光素子のモールドを行え、大部分が導電箔と電解メッキ層でありながら良好な樹脂封止を実現できる。   Fourthly, the light-emitting element can be molded by using the familiarity between the resin of the liquid resin and the transparent resin, and good resin sealing can be realized while the majority is the conductive foil and the electrolytic plating layer.

第５に、各セルを列状に多数個並べて配置することで、発光装置を大量に製造することが可能であり、分離用スリット孔で隣接の列と離間させるので、ダイシングを１方向で最小限に留めており、ダイシングによる封止への悪影響を防止できる。   Fifth, by arranging a large number of cells in a row, it is possible to manufacture a large number of light-emitting devices, and the dicing is minimized in one direction because they are separated from adjacent rows by separation slit holes. Therefore, it is possible to prevent an adverse effect on sealing due to dicing.

第６に、本発明では第１電極部及び第２電極部を電解メッキ工程、液状樹脂の付着工程、分離用スリット孔及び絶縁用スリット孔のエッチング工程、充填樹脂の印刷工程、
導電金属層の電解メッキ工程と極めて少ない工程数で薄型発光装置の製造方法を実現できる。 Sixth, in the present invention, the first electrode part and the second electrode part are subjected to an electrolytic plating process, a liquid resin attaching process, a separation slit hole and an insulating slit hole etching process, a filling resin printing process,
A thin light emitting device manufacturing method can be realized with an electroplating process of the conductive metal layer and a very small number of processes.

本発明の実装基板の（Ａ）上面図、（Ｂ）表面拡大図、（Ｃ）裏面拡大図である。It is (A) top view, (B) surface enlarged view, and (C) back surface enlarged view of the mounting substrate of this invention. 本発明に用いる実装基板の製造方法を説明する図であり、（Ａ）−（Ｆ）は断面図である。It is a figure explaining the manufacturing method of the mounting board | substrate used for this invention, (A)-(F) is sectional drawing. 本発明の製造方法を説明する上面図である。It is a top view explaining the manufacturing method of the present invention. 本発明の製造方法を説明する図であり、（Ａ）は上面図であり、（Ｂ）は下面図である。It is a figure explaining the manufacturing method of this invention, (A) is a top view, (B) is a bottom view. 本発明の製造方法を説明する図であり、（Ａ）は上面図であり、（Ｂ）は下面図であり、（Ｃ）−（Ｅ）は断面図である。It is a figure explaining the manufacturing method of this invention, (A) is a top view, (B) is a bottom view, (C)-(E) is sectional drawing. 本発明の製造方法を説明する断面図であり、（Ａ）および（Ｂ）は断面図であり、（Ｃ）は平面図である。It is sectional drawing explaining the manufacturing method of this invention, (A) and (B) are sectional drawings, (C) is a top view. 従来の発光装置を説明する断面図である。It is sectional drawing explaining the conventional light-emitting device.

図１から図６を参照し、本発明の実施形態を説明する。   An embodiment of the present invention will be described with reference to FIGS.

まず、図１に本発明の実装基板を示す。図１（Ａ）はその上面図であり、図１（Ｂ）は表面の拡大図であり、図１（Ｃ）は裏面の拡大図である。   First, FIG. 1 shows a mounting board of the present invention. FIG. 1A is a top view thereof, FIG. 1B is an enlarged view of the front surface, and FIG. 1C is an enlarged view of the back surface.

本実施形態の実装基板１は、導電箔１０と、第１電極部１１と、第２電極部１２と、液状樹脂１３と、分離用スリット孔１４と、絶縁用スリット孔１５と、半田レジスト層１６とで構成される。   The mounting substrate 1 of this embodiment includes a conductive foil 10, a first electrode part 11, a second electrode part 12, a liquid resin 13, a separation slit hole 14, an insulation slit hole 15, and a solder resist layer. 16.

導電箔１０としてはエッチング可能で電解メッキ可能な金属が選ばれる。本形態では、銅からなる金属箔を採用している。銅箔は９、１２、１８、３５μｍの厚みの極薄のものを選んでいるが、これは薄型発光装置の実装基板となるのでできるだけ薄いものが良い。銅箔はあまり薄いと工程中の製造装置内での処理中や、搬送時に力が加わって変形してしわが発生する場合があるので、１２〜２００μｍの範囲で選ばれる。   A metal that can be etched and electroplated is selected as the conductive foil 10. In this embodiment, a metal foil made of copper is employed. The copper foil of 9, 12, 18, and 35 μm thickness is selected as an extremely thin one. However, since this is a mounting substrate for a thin light emitting device, it should be as thin as possible. If the copper foil is too thin, wrinkles may be generated during processing in the manufacturing apparatus during the process or when the copper foil is deformed due to a force applied during conveyance, so it is selected in the range of 12 to 200 μm.

第１電極部１１及び第２電極部１２は導電箔１０の表面に銅の電解メッキにより選択的に形成され、１５〜２０μｍの範囲の厚みに形成される。第１電極部１１と第２電極部１２は対向して配置され、第２電極部１２は導電箔１０より成るマウント部１７に近接して配置される。マウント部１７は導電箔１０のみで変形に弱いため、更にマウント部１７を第２電極部１２で囲んで額縁状にして補強すると良い。   The first electrode portion 11 and the second electrode portion 12 are selectively formed on the surface of the conductive foil 10 by copper electrolytic plating, and are formed to have a thickness in the range of 15 to 20 μm. The first electrode portion 11 and the second electrode portion 12 are disposed to face each other, and the second electrode portion 12 is disposed in the vicinity of the mount portion 17 made of the conductive foil 10. Since the mount portion 17 is only susceptible to deformation by the conductive foil 10, the mount portion 17 is preferably surrounded by the second electrode portion 12 and reinforced in a frame shape.

上述したマウント部１７は発光素子などを固着する領域であり、薄型発光装置を作るためにできるだけ薄いほど望ましいが、発光素子を固着できる強度が必要であるので、第２電極部１２と後述する導電箔１０の裏面に設けた半田レジスト層１６で補強する。   The mount portion 17 described above is a region to which the light emitting element or the like is fixed, and it is desirable that the mount portion 17 is as thin as possible for making a thin light emitting device. The solder resist layer 16 provided on the back surface of the foil 10 is reinforced.

本実施の形態では、第１電極部１１と第２電極部１２とで、１つの発光装置を構成するセル２２が構成されている。また、このセル２２は、分離用スリット孔１４により挟まれる細長の領域に列状に多数個が配置される。   In the present embodiment, the first electrode portion 11 and the second electrode portion 12 constitute a cell 22 constituting one light emitting device. A large number of the cells 22 are arranged in a line in an elongated region sandwiched by the separation slit holes 14.

液状樹脂１３は導電箔１０の表面の第１電極部１１、マウント部１７を囲む第２電極部１２を除いた領域に付着される。液状樹脂１３としてはゲル状のシリコーン樹脂、アクリル樹脂とエポキシ樹脂の混合物などアンダーコート用の樹脂が選ばれ、スクリーン印刷により予定の塗布領域に付着され、１５０℃で４時間程度の熱硬化が行われる。液状樹脂１３は２０〜４０μｍに形成され、第１電極部１１と第２電極部１２の間を埋めて導電箔１０の補強を行う。更に、液状樹脂１３は各セル２２同士の間にも埋設され、このことにより一列に配置された多数の各セル２２は液状樹脂１３により帯状に連結された状態となる。   The liquid resin 13 is attached to a region excluding the first electrode portion 11 and the second electrode portion 12 surrounding the mount portion 17 on the surface of the conductive foil 10. As the liquid resin 13, an undercoat resin such as a gel silicone resin or a mixture of an acrylic resin and an epoxy resin is selected. The resin is attached to a predetermined application region by screen printing and thermally cured at 150 ° C. for about 4 hours. Is called. The liquid resin 13 is formed to a thickness of 20 to 40 μm and fills the space between the first electrode portion 11 and the second electrode portion 12 to reinforce the conductive foil 10. Further, the liquid resin 13 is embedded between the cells 22, and thus, the plurality of cells 22 arranged in a row are connected in a strip shape by the liquid resin 13.

分離用スリット孔１４は列状に多数個配列された各セル２２の第１電極部１１と第２電極部１２の隣接する列間に設けられ、列毎に各セル２２を離間させる。分離用スリット孔１４は列に沿って連続して延在され、導電箔１０と隣接した列の第１電極部１１と第２電極部１２を形成する銅の電解メッキ層および導電箔を貫通して形成される。   A plurality of separation slit holes 14 are provided between adjacent rows of the first electrode portion 11 and the second electrode portion 12 of each cell 22 arranged in a row, and each cell 22 is separated from each other. The slit 14 for separation is continuously extended along the row and penetrates the copper electrolytic plating layer and the conductive foil forming the first electrode portion 11 and the second electrode portion 12 in the row adjacent to the conductive foil 10. Formed.

絶縁用スリット孔１５は導電箔１０の反対主面の第１電極部１１と第２電極部１２の間に対応して位置し、導電箔１０を分離用スリット孔１４に並設して設けられ、導電箔１０を貫通して設けられる。この絶縁用スリット孔１５により、各セル２２に含まれる第１電極部１１と第２電極部１２が電気的に分離される。   The insulating slit 15 is located between the first electrode portion 11 and the second electrode portion 12 on the opposite main surface of the conductive foil 10, and the conductive foil 10 is provided in parallel with the separation slit 14. The conductive foil 10 is provided. The insulating slit hole 15 electrically separates the first electrode portion 11 and the second electrode portion 12 included in each cell 22.

半田レジスト層１６は絶縁用スリット孔１５を覆い、導電箔１０の反対主面に設けられ、液状樹脂１３及びマウント部１７に対応する位置に設けられ、導電箔１０を補強する働きを有する。更にまた、上記した液状樹脂１３と同様に、各列に含まれるセル２２同士の間にも、半田レジスト層１６が埋設される。従って、本形態では、液状樹脂１３および半田レジスト層１６により、各列に含まれるセル２２同士が帯状に保持される。   The solder resist layer 16 covers the insulating slit hole 15, is provided on the opposite main surface of the conductive foil 10, is provided at a position corresponding to the liquid resin 13 and the mount portion 17, and functions to reinforce the conductive foil 10. Furthermore, similarly to the liquid resin 13 described above, a solder resist layer 16 is embedded between the cells 22 included in each row. Therefore, in this embodiment, the cells 22 included in each row are held in a band shape by the liquid resin 13 and the solder resist layer 16.

次に、実装基板のパターンについて説明する。   Next, the pattern of the mounting substrate will be described.

図１（Ａ）に示す実装基板は具体的に１００ｍｍ×６８ｍｍの大きさに切断されている。周辺は額縁状の枠部２が設けられ、複数のブロック３に区分されており、各ブロック３に列状に各セル２２が隣接して配列される。ブロック３間の橋洛部４は両端を枠部２に連結され、不要な力で各セル２２が変形することを防止している。   The mounting substrate shown in FIG. 1A is specifically cut into a size of 100 mm × 68 mm. The periphery is provided with a frame-like frame portion 2 and is divided into a plurality of blocks 3, and each cell 22 is arranged adjacent to each block 3 in a row. Both ends of the bridge portion 4 between the blocks 3 are connected to the frame portion 2 to prevent the cells 22 from being deformed by unnecessary force.

各列には多数のセル２２が連続して配列され、列間には分離用スリット孔１４で分離離間されている。各列は２７ｍｍの長さに３０個のセル２２が配列され、列は４７列設けられる。橋洛部４は２．９ｍｍの幅に形成され、上下のブロック３の補強をする。枠部２の左右辺には２個ずつの位置合わせ孔５が設けられ、右下には切欠き部６を設けて裏表と上下方向の認識に利用する。また両端の列に隣接して枠部２に各セル２２の周端に対応するマーク７が設けられ、ダイシング時の位置合わせに用いる。これらは製造工程における各セル２２との位置合わせに用いられ極めて精度の高い薄型発光装置の製造を実現する。   A large number of cells 22 are continuously arranged in each row, and the rows are separated and separated by a separation slit hole 14. In each row, 30 cells 22 are arranged in a length of 27 mm, and 47 rows are provided. The bridge portion 4 is formed with a width of 2.9 mm and reinforces the upper and lower blocks 3. Two alignment holes 5 are provided on the left and right sides of the frame 2, and a notch 6 is provided on the lower right side for use in recognizing the front and back sides. In addition, a mark 7 corresponding to the peripheral edge of each cell 22 is provided in the frame portion 2 adjacent to the columns at both ends, and is used for alignment during dicing. These are used for alignment with each cell 22 in the manufacturing process and realize the manufacture of a thin light-emitting device with extremely high accuracy.

次に、図１（Ｂ）に実装基板１の表面拡大図を示す。各セル２２の大きさは０．８ｍｍ×１．６０ｍｍと極めて微小である。隣接する分離用スリット孔１４間に右側に第１電極部１１と左側に第２電極部１２が対向して配列され、両者は０．３６ｍｍ離間されている。   Next, an enlarged view of the surface of the mounting substrate 1 is shown in FIG. Each cell 22 has a very small size of 0.8 mm × 1.60 mm. Between the adjacent slit holes 14 for separation, the first electrode part 11 on the right side and the second electrode part 12 on the left side are arranged facing each other, and they are separated by 0.36 mm.

第１電極部１１は分離用スリット孔１４から０．４０ｍｍほどの幅に形成される。   The first electrode portion 11 is formed with a width of about 0.40 mm from the separation slit hole 14.

第２電極部１２はマウント部１７を囲み、マウント部１７の導電箔１０の補強をしている。マウント部１７は載置される発光素子に応じて適宜設計されるが、０．４０ｍｍ×０．４０ｍｍに形成される。なお、第２電極部１２は分離用スリット孔１４から０．８４ｍｍほどの幅に形成される。   The second electrode portion 12 surrounds the mount portion 17 and reinforces the conductive foil 10 of the mount portion 17. The mount portion 17 is appropriately designed according to the light emitting element to be mounted, but is formed to be 0.40 mm × 0.40 mm. The second electrode portion 12 is formed with a width of about 0.84 mm from the separation slit hole 14.

本実施の形態では、１つの列に含まれるセル２２同士は分離されている。具体的には、図１（Ｂ）を参照して、セル２２Ａに含まれる第１電極部１１と、隣接するセル２２Ｂに含まれる第１電極部１１とは分離されており連続してない。更に、セル２２Ａに含まれる第２電極部１２と、隣接するセル２２Ｂに含まれる第２電極部１２に含まれる第２電極部１２も分離されている。換言すると、セル２２Ａとセル２２Ｂとの間には、各セルを構成する導電箔等の金属材料が存在しない。この様にすることで、発光装置の製造工程に於いて一点鎖線で示される部分にて基板の切断を行っても、金属材料が切断されないので、切断に伴いバリが発生することが防止される。   In the present embodiment, the cells 22 included in one column are separated from each other. Specifically, referring to FIG. 1B, first electrode portion 11 included in cell 22A and first electrode portion 11 included in adjacent cell 22B are separated and are not continuous. Furthermore, the second electrode part 12 included in the cell 22A and the second electrode part 12 included in the second electrode part 12 included in the adjacent cell 22B are also separated. In other words, there is no metal material such as a conductive foil constituting each cell between the cell 22A and the cell 22B. By doing so, even if the substrate is cut at the portion indicated by the alternate long and short dash line in the manufacturing process of the light emitting device, the metal material is not cut, so that the generation of burrs due to the cutting is prevented. .

更にまた、各セル２２同士の間にて導電箔が除去される除去領域の幅Ｌ１は例えば１００μｍ〜２００μｍ程度である。この幅Ｌ１を、実装基板１を切断する工程にて用いられるカットソーの幅よりも長くすることにより、バリの発生をより確実に防止できる。   Furthermore, the width L1 of the removal region where the conductive foil is removed between the cells 22 is, for example, about 100 μm to 200 μm. By making this width L1 longer than the width of the cut saw used in the step of cutting the mounting substrate 1, the generation of burrs can be prevented more reliably.

更に、図１（Ｃ）に実装基板１の裏面拡大図を示す。第１外部取出電極部２４と第２外部取出電極部２５の間に絶縁用スリット孔１５が設けられている。絶縁用スリット孔１５は、第１外部取出電極部２４と第２外部取出電極部２５の電気的な絶縁を行い、強度的にはできるだけ導電箔１０を残したいので、幅０．１５ｍｍと最小にしている。隣接する分離用スリット孔１４間に両側から０．４０ｍｍの幅に第１外部取出電極部２４と第２外部取出電極部２５が設けられ、絶縁用スリット孔１５を含めて中央部分は半田レジスト層１６で被覆されている。この半田レジスト層１６は枠部２やブロック３間の橋洛部４にもスクリーン印刷をされ、実装基板１の全体の機械的な強度を上げている。また、半田レジスト層１６はマウント部１７の導電箔１０の裏側にも印刷され、マウント部１７の機械的な補強をして発光素子の固着時の機械的な強度を確保している。   Further, FIG. 1C shows an enlarged back view of the mounting substrate 1. An insulating slit 15 is provided between the first external extraction electrode portion 24 and the second external extraction electrode portion 25. The insulating slit hole 15 provides electrical insulation between the first external extraction electrode portion 24 and the second external extraction electrode portion 25, and in terms of strength, it is desired to leave the conductive foil 10 as much as possible. ing. A first external extraction electrode portion 24 and a second external extraction electrode portion 25 are provided between adjacent separation slit holes 14 to a width of 0.40 mm from both sides, and the central portion including the insulation slit hole 15 is a solder resist layer. 16 is covered. This solder resist layer 16 is also screen-printed on the frame part 2 and the bridge part 4 between the blocks 3 to increase the overall mechanical strength of the mounting substrate 1. The solder resist layer 16 is also printed on the back side of the conductive foil 10 of the mount portion 17, and mechanical strength of the mount portion 17 is ensured to ensure mechanical strength when the light emitting element is fixed.

第１電極部１１と第２電極部１２の場合と同様に、実装基板１の下面に於いても、隣接するセル２２同士の境界では金属材料が除去されている。具体的には、セル２２Ａに含まれる第１外部取出電極部２４と、セル２２Ｂに含まれる第１外部取出電極部２４とは分離されている。同様に、セル２２Ａに含まれる第２外部取出電極部２５と、セル２２Ｂに含まれる第２外部取出電極部２５とは、分離されている。セル２２Ａに含まれる第１外部取出電極部２４および第２外部取出電極部２５と、セル２２Ｂに含まれる第１外部取出電極部２４および第２外部取出電極部２５とが離間する距離は、上記したＬ１と同様でよい。この様にすることで、実装基板１の下面側に関しても、セル２２同士の間には各電極を構成する金属材料が存在しないので、セル２２同士を切断により分離しても、この切断に伴うバリの発生が防止される。   As in the case of the first electrode portion 11 and the second electrode portion 12, the metal material is removed at the boundary between the adjacent cells 22 also on the lower surface of the mounting substrate 1. Specifically, the first external extraction electrode portion 24 included in the cell 22A and the first external extraction electrode portion 24 included in the cell 22B are separated. Similarly, the second external extraction electrode portion 25 included in the cell 22A and the second external extraction electrode portion 25 included in the cell 22B are separated. The distance between the first external extraction electrode portion 24 and the second external extraction electrode portion 25 included in the cell 22A and the first external extraction electrode portion 24 and the second external extraction electrode portion 25 included in the cell 22B is as described above. It may be the same as L1. By doing in this way, even on the lower surface side of the mounting substrate 1, there is no metal material constituting each electrode between the cells 22. Therefore, even if the cells 22 are separated by cutting, the cutting is accompanied. Generation of burrs is prevented.

即ち、紙面上にて一点鎖線で示される位置にて実装基板１を切断しても、切断されるのは液状樹脂１３および半田レジスト層１６のみであり、金属材料は切断されない。このことにより、高速で回転しつつ一点鎖線に沿って移動するカットソーによる基板切断を高速に行っても、バリは発生せずに切断面が精度良く制御される。   That is, even if the mounting substrate 1 is cut at the position indicated by the alternate long and short dash line on the paper, only the liquid resin 13 and the solder resist layer 16 are cut, and the metal material is not cut. As a result, even if the substrate is cut at a high speed by a cutting saw that moves along a one-dot chain line while rotating at a high speed, the cutting surface is controlled with high accuracy without generating burrs.

本発明の実装基板１の特徴は絶縁用スリット孔１５をエッチングで形成するので、従来のプリント基板では基板に絶縁物を用いるので、スリット孔を機械的にルーターを利用して作成する方法が採用されていた。この場合はルーターのドリルの精度を上げても幅１．０ｍｍが限界であった。本発明では実装基板１を極めて薄い導電箔１０で形成するので、エッチング処理が可能になり、従来の半分（０．５ｍｍ）以下の０．２ｍｍ（２００μｍ）幅が可能となった。これにより１００ｍｍ×１００ｍｍの実装基板で１６０８ＬＥＤ（１６ｍｍ×８ｍｍの大きさ）を実例に挙げて計算をすると、以下のようになる。   A feature of the mounting substrate 1 of the present invention is that the insulating slit hole 15 is formed by etching, and an insulating material is used for the substrate in the conventional printed circuit board. Therefore, a method of mechanically creating the slit hole using a router is adopted. It had been. In this case, even if the accuracy of the router drill was increased, the width of 1.0 mm was the limit. In the present invention, since the mounting substrate 1 is formed of the extremely thin conductive foil 10, the etching process can be performed, and a width of 0.2 mm (200 μm) which is half (0.5 mm) or less of the conventional one can be realized. As a result, when a calculation is performed with a 1608 LED (size of 16 mm × 8 mm) as an actual example on a mounting board of 100 mm × 100 mm, the result is as follows.

従来の場合は、列間のピッチが１．６ｍｍ（セルの大きさ）＋１．０ｍｍ（スリット孔の幅）で２．６ｍｍとなり、１００ｍｍには３８列しか収められない。１列当たりのセル数は１２５個なので、
３８列×１２５個＝４７５０個
となり、実装基板１枚当たりの収量は４７５０個である。 In the conventional case, the pitch between rows is 1.6 mm (cell size) +1.0 mm (width of slit hole), which is 2.6 mm, and only 38 rows can be accommodated in 100 mm. Since there are 125 cells per row,
38 rows × 125 pieces = 4750 pieces, and the yield per mounting board is 4750 pieces.

これに対して本発明では、列間のピッチが１．６ｍｍ（セルの大きさ）＋０．２ｍｍ（スリット孔の幅）で１．８ｍｍとなり、１００ｍｍには５５列も収められる。１列当たりのセル数は１２５個なので、
５５列×１２５個＝６８７５個
となり、実装基板１枚当たりの収量は６８７５個である。これは従来の場合と単純に面積比で比較しても１４４．７％ととなり、４４．７％の収量アップが実現できる。 On the other hand, in the present invention, the pitch between rows is 1.6 mm (cell size) +0.2 mm (slit hole width), which is 1.8 mm, and 55 rows can be accommodated in 100 mm. Since there are 125 cells per row,
55 rows × 125 pieces = 6875 pieces, and the yield per one mounting board is 6875 pieces. Even if this is simply compared with the conventional case in terms of area ratio, it is 144.7%, and a yield increase of 44.7% can be realized.

続いて、図２〜図６を参照して本発明の実装基板とそれを用いた薄型発光装置の製造方法について説明する。   Next, a mounting substrate of the present invention and a method for manufacturing a thin light emitting device using the same will be described with reference to FIGS.

本発明の製造方法は、導電箔を予定の第１電極部とマウント部に近接した第２電極部とを露出してレジスト層で被覆する工程と、前記レジスト層をマスクとして前記導電箔に選択的に金属メッキを施し、列状に多数個のセルを隣接して配列した前記第１及び第２電極部を形成する工程と、前記レジスト層を除去して前記第１及び第２電極部と前記マウント部を除いて前記導電箔上に液状樹脂を付着する工程と、前記導電箔を前記液状樹脂を付着した反対面より選択的にエッチングして前記各セルの前記第１及び第２電極部を電気的に分離する絶縁用スリット孔と、隣接した前記列のセルを離間する分離用スリット孔を設けて実装基板を形成する工程と、各セル同士の間の領域に存在する導電箔をエッチングして除去する工程と、前記マウント部に発光素子を固着し、前記発光素子の電極と前記第１電極部をボンディングワイヤで接続する工程と、前記発光素子を樹脂で被覆する工程と、基板および樹脂を切断することにより各セルを発光装置として分離する工程と、から構成される。   The manufacturing method of the present invention includes a step of exposing a conductive foil to a first electrode portion scheduled and a second electrode portion adjacent to the mount portion and covering with a resist layer, and selecting the conductive foil as the mask using the resist layer as a mask Forming the first and second electrode parts in which a large number of cells are arranged adjacently in a row, and removing the resist layer to form the first and second electrode parts. A step of adhering a liquid resin on the conductive foil except for the mounting portion; and the first and second electrode portions of each cell by selectively etching the conductive foil from the opposite surface to which the liquid resin is adhered A process of forming a mounting substrate by providing an insulating slit hole that electrically separates the adjacent cells, and a separation slit hole that separates the cells in the adjacent row, and etching the conductive foil existing in the region between the cells And removing, and the mount A light emitting element is fixed to the electrode, a step of connecting the electrode of the light emitting element and the first electrode portion with a bonding wire, a step of covering the light emitting element with a resin, and light-emitting each cell by cutting the substrate and the resin And a step of separating as a device.

第１の工程（図２（Ａ）（Ｂ））では、導電箔１０を予定の第１電極部１１とマウント部１７に近接した第２電極部１２とを露出してレジスト層２１で被覆する。   In the first step (FIGS. 2A and 2B), the conductive foil 10 is covered with the resist layer 21 by exposing the planned first electrode portion 11 and the second electrode portion 12 adjacent to the mount portion 17. .

まず、図２（Ａ）に示すように、導電箔１０として１８μｍの厚みの銅箔を用意して、導電箔１０が極めて薄く変形し易いのでその裏面に補強用のキャリアシート２０を貼り付ける。キャリアシート２０としてはポリエステル系フィルムあるいはアクリル系フィルムを基材とする高耐熱性の表面保護用フィルムを用いる。キャリアシート２０は透明で、厚み２００μｍ程度で、弱い粘着性を有しており、導電箔１０に圧着することで貼り付けられる。従って、導電箔１０を巻き取ったロールから供給し、同様にキャリアシート２０も巻き取ったロールから供給して、圧着ローラーで両者を貼りあわせることが可能である。キャリアシート２０は、導電箔１０に液状樹脂１３が塗布されるまで導電箔１０の変形から保護をする。導電箔１０はキャリアシート２０を貼り付けた後に、所定の大きさ、例えば１００ｍｍ×１００ｍｍの大きさに裁断をしてバッチ処理をしても良いし、シート状のまま連続的に以降の工程を流しても良い。   First, as shown in FIG. 2A, a copper foil having a thickness of 18 μm is prepared as the conductive foil 10, and the conductive foil 10 is very thin and easily deformed. Therefore, a reinforcing carrier sheet 20 is attached to the back surface thereof. As the carrier sheet 20, a highly heat-resistant surface protecting film based on a polyester film or an acrylic film is used. The carrier sheet 20 is transparent, has a thickness of about 200 μm, has weak adhesiveness, and is attached by being crimped to the conductive foil 10. Accordingly, it is possible to supply the conductive foil 10 from the roll wound up, and similarly to supply the carrier sheet 20 from the roll taken up, and to bond them together with the pressure roller. The carrier sheet 20 protects the conductive foil 10 from deformation until the liquid resin 13 is applied to the conductive foil 10. The conductive foil 10 may be subjected to batch processing by pasting the carrier sheet 20 and then cutting into a predetermined size, for example, 100 mm × 100 mm. May be flushed.

次に、図２（Ｂ）に示すように、導電箔１０の表面にレジスト層２１で覆い、露光現像して予定の第１電極部１１と第２電極部１２の導電箔１０を露出して他の部分を残す。レジスト層２１はホトレジストをフィルム状にしたドライフィルムを用い、導電箔１０の表面に貼り付ける。   Next, as shown in FIG. 2B, the surface of the conductive foil 10 is covered with a resist layer 21 and exposed and developed to expose the conductive foils 10 of the first electrode portion 11 and the second electrode portion 12 to be exposed. Leave other parts. The resist layer 21 is affixed to the surface of the conductive foil 10 using a dry film made of a photoresist.

第２の工程（図２（Ｃ））では、レジスト層２１をマスクとして導電箔１０に選択的に金属メッキを施し、列状に多数個のセル２２を隣接して配列した第１及び第２電極部１１、１２を形成する。   In the second step (FIG. 2C), the conductive foil 10 is selectively subjected to metal plating using the resist layer 21 as a mask, and a plurality of cells 22 are arranged adjacent to each other in rows. Electrode portions 11 and 12 are formed.

本工程で、導電箔１０の裏面はキャリアシート２０で覆われているので、銅の電解メッキ槽に導電箔１０を陰極に接続して配置し、露出された導電箔１０上に選択的に銅メッキ層を１５〜２０μｍの厚みに析出されて、第１電極部１１及び第２電極部１２が形成される。従って、導電箔１０と第１電極部１１及び第２電極部１２の重なる部分は約４０μｍの厚みになり、実装基板としての十分な機械的強度が得られる。電解メッキが終了するとレジスト層２１は除去され、マウント部１７と第１電極部１１と第２電極部１２との間の導電箔１０が露出される。マウント部１７は第２電極部１２で額縁状に囲まれるか近接するので、マウント部１７の導電箔１０は変形から保護できる。   In this step, since the back surface of the conductive foil 10 is covered with the carrier sheet 20, the conductive foil 10 is connected to the cathode in a copper electrolytic plating tank, and the copper is selectively deposited on the exposed conductive foil 10. The plating layer is deposited to a thickness of 15 to 20 μm, and the first electrode portion 11 and the second electrode portion 12 are formed. Accordingly, the overlapping portion of the conductive foil 10 with the first electrode portion 11 and the second electrode portion 12 has a thickness of about 40 μm, and sufficient mechanical strength as a mounting substrate can be obtained. When the electrolytic plating is completed, the resist layer 21 is removed, and the conductive foil 10 between the mount portion 17, the first electrode portion 11, and the second electrode portion 12 is exposed. Since the mount portion 17 is surrounded by or adjacent to the frame shape of the second electrode portion 12, the conductive foil 10 of the mount portion 17 can be protected from deformation.

各セル２２を構成する第１電極部１１及び第２電極部１２は前述したように列状に多数個隣接して配列され、列も多数個離間して配列されている。本工程では隣接する列の第１電極部１１と第２電極部１２とは分離用スリット孔１４がまだ形成されていないので、連結した状態にある。   As described above, a large number of the first electrode portions 11 and the second electrode portions 12 constituting each cell 22 are arranged adjacent to each other in a row, and a large number of rows are also arranged apart from each other. In this step, the first electrode portion 11 and the second electrode portion 12 in adjacent rows are in a connected state because the separation slit hole 14 is not yet formed.

本工程の上面図を図３に示す。図３でハッチングした部分がレジスト層２１を示しており、何も印のない部分が導電箔１０が露出されている部分である。この露出された導電箔１０上に選択的に銅メッキ層を１５〜２０μｍの厚みに析出されて、第１電極部１１及び第２電極部１２が形成される
第３の工程（図２（Ｄ））では、第１及び第２電極部１１、１２とマウント部１７を除いて導電箔１０上に液状樹脂１３を付着する。 A top view of this step is shown in FIG. A hatched portion in FIG. 3 shows the resist layer 21, and a portion without any mark is a portion where the conductive foil 10 is exposed. A copper plating layer is selectively deposited on the exposed conductive foil 10 to a thickness of 15 to 20 μm to form the first electrode portion 11 and the second electrode portion 12 in the third step (FIG. 2D )), The liquid resin 13 is deposited on the conductive foil 10 except for the first and second electrode portions 11 and 12 and the mount portion 17.

本工程で、表面を新たなレジスト層１９で覆い、露光現像してマウント部１７、第１電極部１１及び第２電極部１２上にレジスト層１９を残し、第１電極部１１と第２電極部１２との間の導電箔１０のみを露出する。   In this step, the surface is covered with a new resist layer 19, exposed and developed to leave the resist layer 19 on the mount portion 17, the first electrode portion 11 and the second electrode portion 12, and the first electrode portion 11 and the second electrode Only the conductive foil 10 between the portions 12 is exposed.

続いて、第１電極部１１と第２電極部１２との間の導電箔１０にスクリーン印刷により液状樹脂１３を選択的に付着する。液状樹脂１３としてはゲル状のシリコーン樹脂、アクリル樹脂とエポキシ樹脂の混合物などアンダーコート用の樹脂が選ばれ、スクリーン印刷により予定の塗布領域に選択的に付着され、１５０℃で４時間程度の熱硬化が行われる。液状樹脂１３は２０〜４０μｍに形成され、第１電極部１１と第２電極部１２の間を埋めて導電箔１０の補強を行う。   Subsequently, the liquid resin 13 is selectively attached to the conductive foil 10 between the first electrode portion 11 and the second electrode portion 12 by screen printing. As the liquid resin 13, an undercoat resin such as a gel-like silicone resin or a mixture of an acrylic resin and an epoxy resin is selected, and is selectively attached to a predetermined application region by screen printing and heated at 150 ° C. for about 4 hours. Curing is performed. The liquid resin 13 is formed to a thickness of 20 to 40 μm and fills the space between the first electrode portion 11 and the second electrode portion 12 to reinforce the conductive foil 10.

液状樹脂１３の補強が終了すると、キャリアシート２０を導電箔１０から機械的に剥離して、実装基板の原形の状態になる。   When the reinforcement of the liquid resin 13 is completed, the carrier sheet 20 is mechanically peeled off from the conductive foil 10 to obtain the original state of the mounting substrate.

第４の工程（図２（Ｅ））では、導電箔１０を液状樹脂１３を付着した反対面より選択的にエッチングして各セル２２の第１及び第２電極部１１、１２を電気的に分離する絶縁用スリット孔１５と、隣接した各列のセル２２を離間する分離用スリット孔１４を設けて実装基板を形成する。   In the fourth step (FIG. 2E), the conductive foil 10 is selectively etched from the opposite surface to which the liquid resin 13 is adhered to electrically connect the first and second electrode portions 11 and 12 of each cell 22. A mounting substrate is formed by providing insulating slit holes 15 to be separated and separating slit holes 14 for separating cells 22 in adjacent rows.

本工程で、導電箔１０の第１電極部１１及び第２電極部１２を設けた表面側を保護膜３４で覆い、裏面側に新たなレジスト層３６で覆い露光現像し、予定の分離用スリット孔１４と絶縁用スリット孔１５の導電箔１０の裏面側を露出する。   In this step, the front surface side of the conductive foil 10 on which the first electrode portion 11 and the second electrode portion 12 are provided is covered with a protective film 34, and the rear surface side is covered with a new resist layer 36, exposed and developed, and a predetermined separation slit The back side of the conductive foil 10 of the hole 14 and the slit 15 for insulation is exposed.

続いて、塩化第２鉄などのエッチング液を導電箔１０の裏面側から吹き付けて化学エッチングを行い、分離用スリット孔１４は導電箔１０とその上の電解メッキ層部分を貫通してエッチングして形成され、絶縁用スリット孔１５は導電箔１０をエッチングして液状樹脂１３までエッチングして形成される。いずれも約４０μｍ厚以下の銅箔の化学エッチングなので極めて精密にエッチングが行え、絶縁用スリット孔１５で０．２ｍｍの幅に、絶縁用スリット孔１５で０．１５ｍｍの幅に形成できる。なお、分離用スリット孔１４と絶縁用スリット孔１５は本工程で同時に形成される。   Subsequently, chemical etching is performed by spraying an etching solution such as ferric chloride from the back side of the conductive foil 10, and the slit 14 for separation is etched through the conductive foil 10 and the electrolytic plating layer portion thereon. The insulating slit hole 15 is formed by etching the conductive foil 10 to the liquid resin 13. Since both are chemical etchings of a copper foil having a thickness of about 40 μm or less, etching can be performed very precisely, and the insulating slit hole 15 can be formed to have a width of 0.2 mm, and the insulating slit hole 15 can be formed to have a width of 0.15 mm. The separation slit hole 14 and the insulation slit hole 15 are simultaneously formed in this step.

本工程で形成する分離用スリット孔１４は図４（Ａ）に示すように、隣接した列の第１電極部１１と第２電極部１２の中間位置に形成され、導電箔１０とその上の電解メッキ層部分を貫通してエッチングして形成される。   As shown in FIG. 4A, the separation slit hole 14 formed in this step is formed at an intermediate position between the first electrode portion 11 and the second electrode portion 12 in the adjacent row, and the conductive foil 10 and the top thereof. It is formed by etching through the electrolytic plating layer portion.

また、絶縁用スリット孔１５は図４（Ｂ）に示すように、第１電極部１１側の液状樹脂１３の下側に作られる。なお、本図には次工程の構成要素が含まれている。   Further, as shown in FIG. 4B, the insulating slit hole 15 is formed below the liquid resin 13 on the first electrode portion 11 side. In addition, the figure contains the component of the following process.

第５の工程（図２（Ｆ））では、前工程で作った実装基板に薄型発光素子を組み込むための加工を行う。   In the fifth step (FIG. 2F), processing for incorporating the thin light-emitting element into the mounting substrate formed in the previous step is performed.

まず、導電箔１０の裏面側に絶縁用スリット孔１５を埋め込むようにエポキシ樹脂系の半田レジスト層１６をスクリーン印刷を行う。半田レジスト層１６は導電箔１０の裏面の第１電極部１１と第２電極部１２を各セルの両側に露出し、絶縁用スリット孔１５と導電箔１０のマウント部１７を含む中央部分に付着される。半田レジスト層１６の役割は第１に、実装基板の周囲及びブロック間にもスクリーン印刷をされ、実装基板の機械的な強度を強める。第２に、マウント部１７に対応する導電箔１０の裏面にも付着されて発光素子の固着時のマウント部１７の補強を行う。第３に、絶縁用スリット孔１５を含めて各セルの導電箔１０の外部電極として働く第１電極部１１と第２電極部１２以外を広く覆い、液状樹脂１３と一緒に各セル２２の導電箔１０を補強する。第４に、露出される外部電極として働く第１電極部１１と第２電極部１２間を離間させて半田ブリッジの形成を防止する。   First, the epoxy resin solder resist layer 16 is screen-printed so that the insulating slit 15 is embedded in the back surface of the conductive foil 10. The solder resist layer 16 exposes the first electrode portion 11 and the second electrode portion 12 on the back surface of the conductive foil 10 on both sides of each cell, and adheres to the central portion including the insulating slit hole 15 and the mount portion 17 of the conductive foil 10. Is done. The role of the solder resist layer 16 is firstly screen-printed also around the mounting substrate and between the blocks, thereby increasing the mechanical strength of the mounting substrate. Secondly, the mounting portion 17 is also attached to the back surface of the conductive foil 10 corresponding to the mounting portion 17 to reinforce the mounting portion 17 when the light emitting element is fixed. Thirdly, the insulating electrode 15 including the insulating slit hole 15 is covered widely except for the first electrode portion 11 and the second electrode portion 12 that serve as the external electrodes of the conductive foil 10 of each cell, and the electrical conductivity of each cell 22 together with the liquid resin 13 is covered. The foil 10 is reinforced. Fourthly, the formation of a solder bridge is prevented by separating the first electrode portion 11 and the second electrode portion 12 that serve as exposed external electrodes.

次に、実装基板１の露出された第１電極部１１、マウント部１７及び第２電極部１２に導電性金属層２３を電解メッキにより付着する。導電性金属層２３は、ボンディング可能で硬度の高い多層金属層である。ここでは例えば、ニッケル（Ｎｉ）−金（Ａｕ）層またはＮｉ−Ａｇ層である。また、パラジウム（Ｐｄ）などを用いたＮｉ−Ｐｄ層やＡｇ−Ｐｄ層であってもよい。Ｎｉ層は硬度が高い金属層であり、Ａｕ層またはＡｇ層は金属細線２８とのボンディングを可能とする。   Next, the conductive metal layer 23 is attached to the exposed first electrode part 11, mount part 17, and second electrode part 12 of the mounting substrate 1 by electrolytic plating. The conductive metal layer 23 is a multilayer metal layer that can be bonded and has high hardness. Here, for example, a nickel (Ni) -gold (Au) layer or a Ni-Ag layer. Further, a Ni—Pd layer or an Ag—Pd layer using palladium (Pd) or the like may be used. The Ni layer is a metal layer having a high hardness, and the Au layer or the Ag layer can be bonded to the metal thin wire 28.

ここでは実装基板１は液状樹脂１３と半田レジスト層１６で覆われた部分を除き、新たなマスクなしで電解メッキが行われる。導電箔１０の表面側の第１電極部１１と第２電極部１２、マウント部１７に導電性金属層２３がメッキされ、導電箔１０の裏面側には外部取り出し電極となる両端に設けた第１外部取出電極部２４と第２外部取出電極部２５にメッキされる。ニッケル層は約５μｍ、金、銀あるいはパラジウム層は約０．２μｍに形成され、ニッケル層の硬度を利用してマウント部１７の補強を兼ねている。金、銀あるいはパラジウム層はボンディングを可能にするとともに発光素子のリフレクタとしての働きも有している。   Here, the mounting substrate 1 is subjected to electrolytic plating without a new mask except for a portion covered with the liquid resin 13 and the solder resist layer 16. A conductive metal layer 23 is plated on the first electrode portion 11, the second electrode portion 12, and the mount portion 17 on the front surface side of the conductive foil 10, and the back surface side of the conductive foil 10 is provided with both ends serving as external extraction electrodes. The first external extraction electrode portion 24 and the second external extraction electrode portion 25 are plated. The nickel layer is formed with a thickness of about 5 μm, and the gold, silver, or palladium layer is formed with a thickness of about 0.2 μm. The gold, silver, or palladium layer enables bonding and has a function as a reflector of the light emitting element.

更に本工程では、導電箔の連結部を経由して通電する電解メッキ処理が行われる。具体的には、図４（Ａ）に示すように、列状に配列された各セル２２は導電箔から成る連結部（細く括れた部分）を経由して接続されている。従って、本工程では、この連結部を経由して通電することで電解メッキ処理によるメッキ膜が形成される。また、この接続部分は後の工程にて除去される。   Further, in this step, an electrolytic plating process is performed in which current is passed through the connecting portion of the conductive foil. Specifically, as shown in FIG. 4A, the cells 22 arranged in a line are connected via a connecting portion (thinly narrowed portion) made of conductive foil. Therefore, in this step, a plating film is formed by electrolytic plating by energizing through this connecting portion. In addition, this connection portion is removed in a later step.

第６の工程では、図５を参照して、各セル２２同士の間に設けられた金属材料を除去することで、最終的に行う分離工程に於けるバリの発生を防止する。図５（Ａ）は実装基板の上面を示す平面図であり、図５（Ｂ）は実装基板の下面を示す平面図であり、図５（Ｃ）−図５（Ｅ）は図５（Ａ）のＣ−Ｃ’線に於ける断面図である。   In the sixth step, referring to FIG. 5, the metal material provided between the cells 22 is removed to prevent the generation of burrs in the final separation step. 5A is a plan view showing the upper surface of the mounting substrate, FIG. 5B is a plan view showing the lower surface of the mounting substrate, and FIGS. 5C to 5E are FIGS. It is sectional drawing in CC 'line | wire of ().

図５（Ａ）を参照して、上記した工程により実装基板１の上面には、第１電極部１１および第２電極部１２から成るセル２２が列状に設けられている。各セル２２同士の間には液状樹脂１３が設けられているので一見すると各セル２２は互いに分離されているように見えるが、本工程以前では、列状に配置されたセル２２同士は、液状樹脂１３に覆われている導電箔によりまだ接続されている状態である。この状態を示すのが、図５（Ｃ）である。   Referring to FIG. 5A, cells 22 including first electrode portions 11 and second electrode portions 12 are provided in a row on the upper surface of mounting substrate 1 by the above-described steps. Since the liquid resin 13 is provided between the cells 22, the cells 22 seem to be separated from each other at first glance. However, before this step, the cells 22 arranged in a row are liquid. It is in a state where it is still connected by the conductive foil covered with the resin 13. FIG. 5C shows this state.

図５（Ｂ）を参照して、実装基板の下面に於いては、隣接するセル２２に含まれる第１外部取出電極部２４および第２外部取出電極部２５は導電箔により相互に接続されている。従って、この状態のままセル２２同士の境界にて切断処理を行うと、導電箔を切断することによりバリが発生してしまう。本工程では、セル２２同士の間に位置する導電箔をエッチングにより除去することで、除去領域３０を設けている。即ち、後の工程にて切断加工が行われる領域に配置された導電箔を予め除去することでバリの発生を抑止している。   Referring to FIG. 5B, on the lower surface of the mounting substrate, the first external extraction electrode portion 24 and the second external extraction electrode portion 25 included in the adjacent cell 22 are connected to each other by a conductive foil. Yes. Therefore, if the cutting process is performed at the boundary between the cells 22 in this state, burrs are generated by cutting the conductive foil. In this step, the removal region 30 is provided by removing the conductive foil located between the cells 22 by etching. That is, the generation of burrs is suppressed by removing in advance the conductive foil disposed in the area where the cutting process is performed in a later step.

図５（Ｄ）の断面図を参照して、本工程では先ず、各セル２２に含まれる第１外部取出電極部２４の下面が被覆されて且つ、上記した除去領域３０の導電箔１０が露出されるように、レジスト３２を形成する。実際は、導電箔１０の下面に設けられた第１外部取出電極部２４を構成するメッキ膜がレジスト３２により選択的に被覆される。そして、下方からウェットエッチングを行うことにより、除去領域３０の導電箔１０およびメッキ膜が除去される。このエッチングは、液状樹脂１３に到達するまで連続して行われることで、除去領域３０に存在する金属材料が完全に除去される。また、導電箔１０の上面に配置された第１電極部１１および第２電極部１２は、本工程のエッチングから保護するために、不図示の保護膜により保護された状態となる。本工程が終了した後は、レジスト３２は剥離される。   Referring to the cross-sectional view of FIG. 5D, in this step, first, the lower surface of the first external extraction electrode portion 24 included in each cell 22 is covered, and the conductive foil 10 in the removal region 30 is exposed. As described above, a resist 32 is formed. Actually, the plating film constituting the first external extraction electrode portion 24 provided on the lower surface of the conductive foil 10 is selectively covered with the resist 32. Then, by conducting wet etching from below, the conductive foil 10 and the plating film in the removal region 30 are removed. This etching is continuously performed until the liquid resin 13 is reached, whereby the metal material present in the removal region 30 is completely removed. In addition, the first electrode portion 11 and the second electrode portion 12 arranged on the upper surface of the conductive foil 10 are protected by a protective film (not shown) in order to protect from the etching in this step. After this step is completed, the resist 32 is peeled off.

図５（Ｅ）を参照して、次に、導電箔１０が除去された除去領域３０に、新たな充填樹脂３８を埋設する。具体的には、液状または半固形状のエポキシ樹脂あるいはシリコーン樹脂等を除去領域３０に充填した後に加熱硬化することで、充填樹脂３８が形成される。   Referring to FIG. 5E, next, a new filling resin 38 is embedded in the removal region 30 where the conductive foil 10 has been removed. Specifically, the filling resin 38 is formed by filling the removal region 30 with a liquid or semi-solid epoxy resin, silicone resin, or the like, followed by heat curing.

以上の工程により、セル２２が列状に多数個配置された実装基板が製造される。この実装基板１では、図１（Ｂ）および図１（Ｃ）を参照して説明したように、各セル同士の間では、導電箔等の金属材料が除去されている。従って、各セル２２が分離される様に実装基板１を切断しても、金属材料を切断しないのでバリの発生を防いだ分離工程が実現される。   Through the above steps, a mounting substrate in which a large number of cells 22 are arranged in a row is manufactured. In the mounting substrate 1, as described with reference to FIGS. 1B and 1C, the metal material such as the conductive foil is removed between the cells. Therefore, even if the mounting substrate 1 is cut so that the cells 22 are separated, the metal material is not cut, so that a separation process that prevents the generation of burrs is realized.

次に図６（Ａ）（Ｂ）に示すように薄型発光装置の組み込みを行う。   Next, as shown in FIGS. 6A and 6B, a thin light emitting device is assembled.

第７の工程（図６（Ａ））では、マウント部１７に発光素子２６を固着し、発光素子２６の電極と第１電極部１１をボンディングワイヤで接続する。   In the seventh step (FIG. 6A), the light emitting element 26 is fixed to the mount portion 17, and the electrode of the light emitting element 26 and the first electrode portion 11 are connected by a bonding wire.

本工程では、発光素子２６のカソード電極を接着剤２７でマウント部１７上に固着する。発光素子２６の固着にはチップマウンターを用いる。発光素子２６が実際に固着されるのは、マウント部の導電性金属層２３である。マウント部１７は第２電極部１２で囲まれて形成されるので、その内部への発光素子２６の実装は位置認識が容易となる。   In this step, the cathode electrode of the light emitting element 26 is fixed on the mount portion 17 with an adhesive 27. A chip mounter is used for fixing the light emitting element 26. The light emitting element 26 is actually fixed to the conductive metal layer 23 of the mount portion. Since the mount portion 17 is formed so as to be surrounded by the second electrode portion 12, the position of the light emitting element 26 can be easily recognized by mounting the light emitting element 26 therein.

接着剤２７としては銀（Ａｇ）などの導電性ペーストである。また、発光素子２６は、マウント部１７の金（Ａｕ）メッキ層にＡｕ共晶により固着してもよい。   The adhesive 27 is a conductive paste such as silver (Ag). The light emitting element 26 may be fixed to the gold (Au) plating layer of the mount portion 17 by Au eutectic.

更に、金の金属細線２８を用いてボンダーで第１電極部１１の位置をパターン認識しながら超音波熱圧着により、発光素子２６のアノード電極と第１電極部１１の導電性金属層２３とを接続する。なお、発光素子２６のカソード電極は接着剤２７を介して直接第２電極部１２と接続する。   Further, the anode electrode of the light emitting element 26 and the conductive metal layer 23 of the first electrode part 11 are bonded by ultrasonic thermocompression while recognizing the position of the first electrode part 11 with a bonder using a gold fine metal wire 28. Connecting. The cathode electrode of the light emitting element 26 is directly connected to the second electrode portion 12 via the adhesive 27.

第８の工程（図６（Ｂ））では、発光素子２６を透明樹脂２９で被覆する。   In the eighth step (FIG. 6B), the light emitting element 26 is covered with a transparent resin 29.

本工程では、発光素子２６および金属細線２８を透明樹脂２９で被覆する。透明樹脂２９は、発光素子２６および金属細線２８を外気より保護し、また光を取り出す凸レンズとしても働く。   In this step, the light emitting element 26 and the fine metal wire 28 are covered with a transparent resin 29. The transparent resin 29 protects the light emitting element 26 and the fine metal wire 28 from the outside air, and also functions as a convex lens that extracts light.

透明樹脂２９はモールド金型を用いてトランスファモールドあるいはインジェクションモールドにより形成される。モールドされた透明樹脂２９はマウント部１７の第２電極部１２の回りを液状樹脂１３で３辺で囲むので、液状樹脂１３と透明樹脂２９の樹脂同士の相性により接着強度を良好に保持できる。このために個別に分離された後は透明樹脂２９の持つ強度で薄型であるにも拘わらず発光装置の形状を維持できる。   The transparent resin 29 is formed by transfer molding or injection molding using a mold. Since the molded transparent resin 29 surrounds the second electrode portion 12 of the mount portion 17 with the liquid resin 13 on three sides, the adhesive strength can be favorably maintained due to the compatibility between the liquid resin 13 and the transparent resin 29. For this reason, after being separated individually, the shape of the light emitting device can be maintained despite the thinness of the strength of the transparent resin 29.

モールド金型は分離用スリット孔１４と第１電極部１１と第２電極部１２の一部に重なるように配置して実装基板１の表面側のみに透明樹脂２９を注入してモールドを行う。透明樹脂２９はこの際にマウント部１７を囲む第２電極部１２の３辺にある液状樹脂１３と馴染みが良いので、良好に接着して発光素子２６を封止する。   The mold is placed so as to overlap a part of the separation slit hole 14, the first electrode portion 11, and the second electrode portion 12, and molding is performed by injecting the transparent resin 29 only on the surface side of the mounting substrate 1. At this time, since the transparent resin 29 is familiar with the liquid resin 13 on the three sides of the second electrode portion 12 surrounding the mount portion 17, the transparent resin 29 adheres well and seals the light emitting element 26.

第９の工程（図６（Ｃ））では、各セル２２ごとに個別の発光装置に分割する。   In the ninth step (FIG. 6C), each cell 22 is divided into individual light emitting devices.

本工程では、多数個のセル２２が列状に配列されているので、各列の透明樹脂２９が分離用スリット孔１４で離間され、連続した１本の樹脂モールドとして現れる。そして、実装基板の各列に隣接して配列された多数個のセルをダイシングにより個別の完成した発光装置に分離する。列に対して直交にダイシングをすることで、隣接のセル２２は分離用スリット孔１４により個別に分離できる。   In this step, since a large number of cells 22 are arranged in rows, the transparent resin 29 in each row is separated by the separation slit holes 14 and appears as a continuous resin mold. Then, a large number of cells arranged adjacent to each row of the mounting substrate are separated into individual completed light emitting devices by dicing. By dicing orthogonally to the columns, adjacent cells 22 can be individually separated by the separation slit holes 14.

本工程では、透明樹脂２９と共に、透明樹脂２９が付着された実装基板１も分割される。図１（Ｂ）および図１（Ｃ）を参照すると、実装基板１は一点鎖線にて示される箇所にて切断される。上記したように、実装基板１の切断される部分（セル２２同士の間の領域）では、導電箔やメッキ膜等の金属材料は除去されている。従って、実装基板１の樹脂から成る部分のみが切断されるので、本工程の切断によるバリの発生は無い。更には、透明樹脂２９および実装基板１を切断する速度を速くして生産性を向上させることが可能となる。   In this step, the mounting substrate 1 to which the transparent resin 29 is attached is also divided together with the transparent resin 29. Referring to FIGS. 1B and 1C, the mounting substrate 1 is cut at a location indicated by a one-dot chain line. As described above, the metal material such as the conductive foil and the plating film is removed at the portion of the mounting substrate 1 to be cut (the region between the cells 22). Accordingly, since only the resin portion of the mounting substrate 1 is cut, no burrs are generated by the cutting in this step. Furthermore, productivity can be improved by increasing the speed of cutting the transparent resin 29 and the mounting substrate 1.

更にまた、図１（Ｂ）を参照して、セル２２同士が離間する幅Ｌ１は、本工程の分離に使用されるカットソーの幅よりも長く設定されている。従って、セル２２に含まれる電極を避けてカットソーによる分離が行われるので、バリの発生させずに分離が行われる。   Furthermore, referring to FIG. 1B, the width L1 at which the cells 22 are separated from each other is set longer than the width of the cut-and-sew used for separation in this step. Therefore, since the separation by the cut-and-sew is performed while avoiding the electrode included in the cell 22, the separation is performed without generating burrs.

１ 実装基板
２ 枠部
３ ブロック
４ 橋洛部
５ 孔
６ 切欠き部
７ マーク
１０ 導電箔
１１ 第１電極部
１２ 第２電極部
１３ 液状樹脂
１４ 分離用スリット孔
１５ 絶縁用スリット孔
１６ 半田レジスト層
１７ マウント部
１９ レジスト層
２０ キャリアシート
２１ レジスト層
２２，２２Ａ，２２Ｂ セル
２３ 導電性金属層
２４ 第１外部取出電極部
２５ 第２外部取出電極部
２６ 発光素子
２７ 接着剤
２８ 金属細線
２９ 透明樹脂
３０ 除去領域
３２ レジスト
３４ 保護膜
３６ レジスト層
３８ 充填樹脂 DESCRIPTION OF SYMBOLS 1 Mounting substrate 2 Frame part 3 Block 4 Bridge part 5 Hole 6 Notch part 7 Mark 10 Conductive foil 11 1st electrode part 12 2nd electrode part 13 Liquid resin 14 Separation slit hole 15 Insulation slit hole 16 Solder resist layer 17 Mount part 19 Resist layer 20 Carrier sheet 21 Resist layers 22, 22A, 22B Cell 23 Conductive metal layer 24 First external extraction electrode part 25 Second external extraction electrode part 26 Light emitting element 27 Adhesive 28 Metal fine wire 29 Transparent resin 30 Removal region 32 Resist 34 Protective film 36 Resist layer 38 Filling resin

Claims (5)

導電箔の上面に列状に多数個のセルを隣接して配列されると共に、電解メッキで形成された第１電極部とマウント部に近接した第２電極部とを設けた前記セルと、
前記第１電極部と前記第２電極部との間の前記導電箔の上面に付着し且つ前記導電箔を補強し、および前記セルと前記セルとが隣接した境界において前記第１電極部及び第２電極部と前記導電箔を分離する除去領域の上面に付着し且つ前記導電箔を補強する液状樹脂と、
隣接する列の前記第１電極部と前記第２電極部との間に位置し、前記セルと前記セルの境界を通って前記導電箔を貫通して設けられ、隣接する前記列を分離する分離用スリット孔と、
前記セル内を通り前記第１電極部と前記第２電極部の間に位置し、前記分離用スリット孔に並設して設けられ且つ前記第１電極部と前記第２電極部が電気的に分離される様に前記導電箔を貫通して設けられた絶縁用スリット孔と、
前記絶縁用スリット孔および前記除去領域を覆って設けられ、前記液状樹脂に対応する位置を覆い且つ前記導電箔を補強する充填樹脂とを具備し、
同じ列に含まれる前記セル同士の境界にて前記導電箔が除去されることにより、隣接する一方の前記セルに含まれる前記導電箔と、隣接する他方の前記セルに含まれる前記導電箔とが分離されていることを特徴とする実装基板。 The upper surface of the conductive foil with are arranged adjacent the plurality of cells in a row, and the cell having a second electrode portion adjacent to the first electrode portion and a mounting portion which is formed by electrolytic plating,
Adhering to the upper surface of the conductive foil between the first electrode portion and the second electrode portion and reinforcing the conductive foil, and the first electrode portion and the first electrode at the boundary where the cell and the cell are adjacent to each other a liquid resin to reinforce and and the conductive foil adhered to the upper surface of the removal region separating the conductive foil and the second electrode portion,
A separation that is located between the first electrode portion and the second electrode portion in an adjacent row, is provided through the conductive foil through the boundary between the cells and the cell, and separates the adjacent rows Slit holes for
It passes through the cell and is located between the first electrode part and the second electrode part, provided in parallel with the separation slit hole, and the first electrode part and the second electrode part are electrically An insulating slit provided through the conductive foil so as to be separated;
Wherein the insulating slits and the removal area provided me covering, comprising a filling resin for reinforcing and the conductive foil covers the position corresponding to the liquid resin,
By removing the conductive foil at the boundary between the cells included in the same row, the conductive foil included in one of the adjacent cells and the conductive foil included in the other adjacent cell A mounting board characterized by being separated. 前記除去領域の幅は、１００μｍ以上であることを特徴とする請求項１記載の実装基板。 The mounting substrate according to claim 1, wherein a width of the removal region is 100 μm or more. 導電箔の上面に、第１電極部とマウント部に近接した第２電極部とから構成されるセルとなる領域が露出するようにメッキレジスト層を形成する工程と、
前記メッキレジスト層をマスクとして前記導電箔に選択的に金属メッキを施し、多数個の前記セルを列状に形成する工程と、
前記メッキレジスト層を除去して前記第１及び第２電極部と前記マウント部を除いて前記導電箔上に液状樹脂を付着する工程と、
前記導電箔を下面から選択的にエッチングして、前記各セルの前記第１及び第２電極部を電気的に分離するように前記導電箔を貫通する絶縁用スリット孔と、隣接した前記列のセルと前記列のセルの境界で離間するように前記導電箔とその上の前記金属メッキを貫通する分離用スリット孔を設けて実装基板を形成する工程と、
前記絶縁用スリット孔を前記導電箔の下面から被覆する共に、前記液状樹脂に対応する位置を覆い且つ前記導電箔を補強する充填樹脂を形成する工程と、
同じ列に含まれて隣接する前記セル同士を連結する連結部分の前記導電箔を、ウェットエッチングにより除去し、前記セル同士の境界において前記第１電極部及び前記第２電極部を分離する除去領域を形成する工程と、
前記除去領域に前記充填樹脂を埋設する工程と、
前記マウント部に発光素子を固着し、前記発光素子の電極と前記第１電極部とをボンディングワイヤで接続する工程と、
前記各セルに含まれる前記発光素子が列毎に被覆されるように樹脂を形成する工程と、
前記除去領域にて、前記実装基板および前記樹脂を切断することで、前記セルを個別に分離する工程と、
を具備することを特徴とする薄型発光装置の製造方法。 Forming a plating resist layer on the upper surface of the conductive foil such that a region to be a cell composed of the first electrode portion and the second electrode portion close to the mount portion is exposed;
Selectively performing metal plating on the conductive foil using the plating resist layer as a mask, and forming a plurality of the cells in a row; and
Removing the plating resist layer and attaching a liquid resin on the conductive foil except for the first and second electrode portions and the mount portion;
The conductive foil is selectively etched from the lower surface, and the insulating slit holes penetrating the conductive foil so as to electrically separate the first and second electrode portions of each cell, and the adjacent rows Forming a mounting substrate by providing a separation slit hole penetrating the conductive foil and the metal plating on the conductive foil so as to be separated at a boundary between the cell and the cell in the row ; and
Forming a filling resin that covers the insulating slit from the lower surface of the conductive foil, covers a position corresponding to the liquid resin, and reinforces the conductive foil;
A removal region that is included in the same row and that removes the conductive foil at the connecting portion that connects adjacent cells by wet etching, and separates the first electrode portion and the second electrode portion at the boundary between the cells. Forming a step;
Burying the filling resin in the removal region;
Fixing the light emitting element to the mount part, and connecting the electrode of the light emitting element and the first electrode part with a bonding wire;
Forming a resin so that the light emitting elements included in each cell are covered for each column;
Separating the cells individually by cutting the mounting substrate and the resin in the removal region;
A method for manufacturing a thin light-emitting device. 前記導電箔の前記連結部分を除去することで形成される前記除去領域の幅は、前記実装基板および前記樹脂を分離する工程にて用いられるカットソーの幅よりも広いことを特徴とする請求項３記載の薄型発光装置の製造方法。   The width of the removal region formed by removing the connecting portion of the conductive foil is wider than a width of a cut saw used in the step of separating the mounting substrate and the resin. A manufacturing method of the thin light-emitting device described. 前記絶縁用スリット孔を前記導電箔の下面から被覆する共に、前記液状樹脂に対応する位置を覆い且つ前記導電箔を補強する充填樹脂を形成する工程の後に、列状に配列された前記セルが備える前記第１電極部および前記第２電極部の表面に、前記連結部分の前記導電箔を経由して通電することで行われる電解メッキ処理により金属膜を成膜する工程を更に備えることを特徴とする請求項３記載の薄型発光装置の製造方法。
 After the step of covering the insulating slit from the lower surface of the conductive foil and forming a filling resin that covers the position corresponding to the liquid resin and reinforces the conductive foil, the cells arranged in a row are formed. the first electrode portion and a surface of the second electrode portion comprises, the obtaining further Bei the step of forming a metal film by electrolytic plating process performed by energizing through the conductive foil of the connecting portion The method of manufacturing a thin light emitting device according to claim 3.
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