JP2012182207A - Lead frame for led element and method for manufacturing the same - Google Patents

Lead frame for led element and method for manufacturing the same Download PDF

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Publication number
JP2012182207A
JP2012182207A JP2011042573A JP2011042573A JP2012182207A JP 2012182207 A JP2012182207 A JP 2012182207A JP 2011042573 A JP2011042573 A JP 2011042573A JP 2011042573 A JP2011042573 A JP 2011042573A JP 2012182207 A JP2012182207 A JP 2012182207A
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Prior art keywords
lead frame
led element
pad portion
connection
connection area
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Inventor
Masashi Sawadaishi
将士 澤田石
Takayuki Fukada
隆之 深田
Susumu Maniwa
進 馬庭
Junko Toda
順子 戸田
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Toppan Inc
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Toppan Printing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame for an LED element, which has high adhesion to a mold resin.SOLUTION: A lead frame 10 for an LED element comprises, on a first surface in a thickness direction, a pad part 11 on which an LED element is mounted, and a connection area 12 which is formed apart from the pad part and is electrically connected via a wire to the LED element mounted on the pad part. The lead frame for an LED element is characterized in that: only connection surfaces 15A and 15B connecting the pad part and the connection area to a second surface in the thickness direction of the lead frame for an LED element are roughened to have a predetermined roughness or higher.

Description

本発明は、ＬＥＤ（Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ、発光ダイオード）素子を担持、搭載するＬＥＤ素子用リードフレーム基板に用いられるＬＥＤ素子用リードフレーム、およびその製造方法に関する。   The present invention relates to an LED element lead frame used for an LED element lead frame substrate that carries and mounts an LED (Light Emitting Diode) element, and a method of manufacturing the LED element lead frame.

従来、金属製のＬＥＤ素子用リードフレーム（以下、単に「リードフレーム」と称する。）と絶縁性樹脂との複合体からなるＬＥＤ素子用リードフレーム基板が知られている（例えば、特許文献１参照。）。
このようなＬＥＤ素子用リードフレーム基板（以下、単に「リードフレーム基板」と称する。）は、ＬＥＤチップを搭載するための一つ乃至複数のパッド部と、ＬＥＤチップと電気的接続を行うための電気的接合エリアを同一平面に有するリードフレームを備え、パッド部と電気的接合エリア間、およびそれらとリードフレーム外周部の間に存在する空隙が絶縁性のモールド樹脂によって埋められて形成されている。 Conventionally, a lead frame substrate for an LED element made of a composite of a metal lead frame for an LED element (hereinafter simply referred to as “lead frame”) and an insulating resin is known (for example, see Patent Document 1). .)
Such an LED element lead frame substrate (hereinafter simply referred to as a “lead frame substrate”) includes one or more pad portions for mounting the LED chip and an electrical connection with the LED chip. A lead frame having an electrical bonding area on the same plane is provided, and a gap existing between the pad portion and the electrical bonding area and between the lead frame and the outer periphery of the lead frame is filled with an insulating mold resin. .

特開２００４−１７２１６０号公報JP 2004-172160 A

しかしながら、モールド樹脂と、パッド部や電気的接合エリアが形成されるリードフレームとは異種材料であるため、両者の密着性を高めることは容易ではない。両者の密着性が所定の条件を満たさないものは不良品となるため、リードフレーム基板の歩留まり等に悪影響を及ぼすという問題がある。   However, since the mold resin and the lead frame on which the pad portion and the electrical bonding area are formed are different materials, it is not easy to improve the adhesion between them. If the adhesiveness between the two does not satisfy a predetermined condition, it becomes a defective product, which has a problem of adversely affecting the yield of the lead frame substrate.

本発明は、上記事情に鑑みてなされたものであり、モールド樹脂との密着性が高いＬＥＤ素子用リードフレームおよびその製造方法を提供することを目的とする。   This invention is made | formed in view of the said situation, and it aims at providing the lead frame for LED elements with high adhesiveness with mold resin, and its manufacturing method.

本発明の第一の態様は、厚さ方向の一方の面にＬＥＤ素子が搭載されるパッド部と、前記パッド部と離間して形成され、ワイヤーを介して前記パッド部に搭載された前記ＬＥＤ素子と電気的に接続される接続エリアとを有するＬＥＤ素子用リードフレームであって、前記厚さ方向の両面を接続する接続面のみが、所定の粗さ以上に粗化されていることを特徴とする。
ここで、前記所定の粗さは、前記接続面の比表面積が１．５倍以上となるように設定されてもよい。 According to a first aspect of the present invention, there is provided a pad portion on which an LED element is mounted on one surface in the thickness direction, the LED formed separately from the pad portion, and mounted on the pad portion via a wire. An LED element lead frame having a connection area electrically connected to the element, wherein only a connection surface connecting both surfaces in the thickness direction is roughened to a predetermined roughness or more. And
Here, the predetermined roughness may be set so that a specific surface area of the connection surface is 1.5 times or more.

本発明の第二の態様は、厚さ方向の一方の面にＬＥＤ素子が搭載されるパッド部と、前記パッド部と離間して形成され、ワイヤーを介して前記パッド部に搭載された前記ＬＥＤ素子と電気的に接続される接続エリアとを有するＬＥＤ素子用リードフレームの製造方法であって、金属板の一方の面に所定の形状のレジストパターンを形成し、エッチングによって前記パッド部および前記接続エリアを形成し、前記レジストパターンによって前記パッド部および前記接続エリアが被覆された状態で、前記金属板において、前記一方の面と、反対側の他方の面とを接続する接続面に粗化処理を施して所定の粗さ以上に粗化することを特徴とする。   According to a second aspect of the present invention, there is provided a pad portion on which an LED element is mounted on one surface in the thickness direction, the LED formed separately from the pad portion and mounted on the pad portion via a wire. A manufacturing method of a lead frame for an LED element having a connection area electrically connected to the element, wherein a resist pattern having a predetermined shape is formed on one surface of a metal plate, and the pad portion and the connection are etched In the state where the area is formed and the pad portion and the connection area are covered by the resist pattern, the metal plate is roughened on the connection surface connecting the one surface and the other surface on the opposite side. To roughen more than a predetermined roughness.

本発明のＬＥＤ素子用リードフレームおよびその製造方法によれば、モールド樹脂との密着性が高いＬＥＤ素子用リードフレームを提供することができる。   According to the LED element lead frame and the manufacturing method thereof of the present invention, it is possible to provide the LED element lead frame having high adhesion to the mold resin.

本発明の第一実施形態におけるＬＥＤ素子用リードフレームを用いたＬＥＤ素子用リードフレーム基板を示す平面図である。It is a top view which shows the lead frame board for LED elements using the lead frame for LED elements in 1st embodiment of this invention. 図１のＡ−Ａ線における断面図である。It is sectional drawing in the AA of FIG. 図１のＢ―Ｂ線における断面図である。It is sectional drawing in the BB line of FIG. （ａ）から（ｈ）は、同ＬＥＤ素子用リードフレーム基板の製造手順を示す図である。(A)-(h) is a figure which shows the manufacture procedure of the lead frame board | substrate for the LED elements.

本発明の一実施形態について、図１から図４（ｈ）を参照して説明する。
図１は、本実施形態のリードフレームを備えるリードフレーム基板１にＬＥＤチップ（ＬＥＤ発光素子）１００が実装されたＬＥＤパッケージ１１０を示す平面図であり、図２は、図１のＡ−Ａ線における断面図である。リードフレーム基板１は、図１および図２に示すように、リードフレーム１０と、リードフレーム１０に取り付けられた樹脂部２０とを備えている。 An embodiment of the present invention will be described with reference to FIGS. 1 to 4 (h).
FIG. 1 is a plan view showing an LED package 110 in which an LED chip (LED light emitting element) 100 is mounted on a lead frame substrate 1 including the lead frame of the present embodiment, and FIG. 2 is a line AA in FIG. FIG. As shown in FIGS. 1 and 2, the lead frame substrate 1 includes a lead frame 10 and a resin portion 20 attached to the lead frame 10.

リードフレーム１０は、金属合金製の板状の材料をエッチング加工することにより形成されており、ＬＥＤチップ１００が搭載されるパッド部１１と、平面視においてパッド部１１を挟んで対向する接続エリア１２とを備えている。   The lead frame 10 is formed by etching a plate-like material made of a metal alloy. The lead frame 10 is connected to a pad portion 11 on which the LED chip 100 is mounted and a connection area 12 facing the pad portion 11 in plan view. And.

図３は、図１のＢ−Ｂ線における断面図である。図２および図３に示すように、パッド部１１および接続エリア１２は、リードフレーム１０の厚さ方向における上面（第一面）に形成されており、反対側の下面（第二面）には、パッド部１１および接続エリア１２と接続された放熱部１３Ａおよび１３Ｂがそれぞれ形成されている。放熱部１３Ａおよび１３Ｂの下面上における面積は、それぞれパッド部１１および接続エリア１２の上面における面積よりも大きく形成されており、ＬＥＤチップ１００から発生する駆動熱やＬＥＤチップ１００の周辺環境条件による熱を外部に拡散させ、ＬＥＤチップ１００に熱が蓄積されることを抑制している。   3 is a cross-sectional view taken along line BB in FIG. 2 and 3, the pad portion 11 and the connection area 12 are formed on the upper surface (first surface) in the thickness direction of the lead frame 10, and on the lower surface (second surface) on the opposite side. The heat radiation parts 13A and 13B connected to the pad part 11 and the connection area 12 are formed, respectively. The areas on the lower surfaces of the heat dissipating parts 13A and 13B are formed larger than the areas on the upper surfaces of the pad part 11 and the connection area 12, respectively, and drive heat generated from the LED chip 100 and heat due to ambient environmental conditions of the LED chip 100. Is diffused to the outside to prevent heat from being accumulated in the LED chip 100.

パッド部１１と放熱部１３Ａ、および接続エリア１２と放熱部１３Ｂは、それぞれリードフレーム１０の厚さ方向に延びる接続面１５Ａおよび１５Ｂによって接続されている。接続面１５Ａおよび１５Ｂには、粗化処理が施されており、比表面積が１．５倍程度に増加されている。一方、パッド部１１、接続エリア１２、および放熱部１３Ａ、１３Ｂには粗化処理が施されておらず、平坦な表面となっている。
なお、本発明における「比表面積」とは、粗化処理が施された面の表面積を、粗化処理が施される前の当該面の表面積で除した値を意味する。 The pad portion 11 and the heat radiating portion 13A, and the connection area 12 and the heat radiating portion 13B are connected by connection surfaces 15A and 15B extending in the thickness direction of the lead frame 10, respectively. The connection surfaces 15A and 15B are roughened, and the specific surface area is increased to about 1.5 times. On the other hand, the pad portion 11, the connection area 12, and the heat radiating portions 13A and 13B are not roughened and have a flat surface.
The “specific surface area” in the present invention means a value obtained by dividing the surface area of the surface subjected to the roughening treatment by the surface area of the surface before the roughening treatment.

樹脂部２０は、エッチングにより形成されたリードフレーム１０の隙間を埋める充填部２１と、リードフレーム１０の上面に形成されるリフレクター部２２とを備えている。
充填部２１は、パッド部１１および接続エリア１２と、放熱部１３Ａおよび１３Ｂとを露出させるように形成されている。リフレクター部２２は、図１に示すように、リードフレーム基板１の平面視においてパッド部１１および接続エリア１２を囲むように形成されており、図２に示すように、リフレクター部２２に囲まれた領域が、ＬＥＤチップ１００が実装されるキャビティＣとなっている。リフレクター部２２のうちキャビティＣを規定する内面２２Ａは、上端から下端に向かうに従いキャビティＣの面方向（リードフレーム１０の上面と平行な方向）における断面積が小さくなるようにテーパー状に形成されている。 The resin portion 20 includes a filling portion 21 that fills a gap between the lead frames 10 formed by etching, and a reflector portion 22 that is formed on the upper surface of the lead frame 10.
The filling portion 21 is formed so as to expose the pad portion 11 and the connection area 12 and the heat radiation portions 13A and 13B. As shown in FIG. 1, the reflector portion 22 is formed so as to surround the pad portion 11 and the connection area 12 in a plan view of the lead frame substrate 1, and is surrounded by the reflector portion 22 as shown in FIG. 2. The region is a cavity C in which the LED chip 100 is mounted. The inner surface 22A that defines the cavity C in the reflector portion 22 is formed in a tapered shape so that the cross-sectional area in the surface direction of the cavity C (direction parallel to the upper surface of the lead frame 10) decreases from the upper end toward the lower end. Yes.

パッド部１１、接続エリア１２、および放熱部１３Ａ、１３Ｂには、メッキ層１４が形成され、ＬＥＤチップ１００実装時および外部基板接続時の電気的接続の信頼性が高められている。ＬＥＤチップ１００は、パッド部１１の上面に固着して搭載され、各接続エリア１２の上面とＬＥＤチップの図示しない端子とが金線等のワイヤー１０１を用いたワイヤーボンディングにより電気的に接続されてリードフレーム基板１に実装されている。
実装されたＬＥＤチップ１００および各ワイヤー１０１は、キャビティＣ内に充填された透明な封止樹脂１０２により封止されている。こうして、リードフレーム１０を用いたＬＥＤパッケージ１１０が形成されている。 A plating layer 14 is formed on the pad portion 11, the connection area 12, and the heat radiation portions 13A and 13B, and the reliability of electrical connection when the LED chip 100 is mounted and when an external substrate is connected is enhanced. The LED chip 100 is fixedly mounted on the upper surface of the pad portion 11, and the upper surface of each connection area 12 and a terminal (not shown) of the LED chip are electrically connected by wire bonding using a wire 101 such as a gold wire. Mounted on the lead frame substrate 1.
The mounted LED chip 100 and each wire 101 are sealed with a transparent sealing resin 102 filled in the cavity C. Thus, the LED package 110 using the lead frame 10 is formed.

次に、本実施形態のリードフレーム１０、およびリードフレーム基板１の製造方法について説明する。
まず、図４（ａ）に示すように、リードフレームとなる金属板３０の上面（一方の面）３０Ａおよび下面（他方の面）３０Ｂにレジスト層３１を積層する。レジスト層３１の積層は、感光性レジストを塗布する、ドライフィルムレジストを貼付する等の方法により行うことができる。 Next, a method for manufacturing the lead frame 10 and the lead frame substrate 1 of the present embodiment will be described.
First, as shown in FIG. 4A, a resist layer 31 is laminated on an upper surface (one surface) 30A and a lower surface (other surface) 30B of a metal plate 30 to be a lead frame. The lamination of the resist layer 31 can be performed by a method such as applying a photosensitive resist or attaching a dry film resist.

次に、所定のパターンを有するフォトマスク(不図示)を用いてレジスト層３１に対して露光、現像処理等を行い、図４（ｂ）に示すように、金属板３０の上面３０Ａおよび下面３０Ｂにレジストパターン３２を形成する（レジストパターン形成工程）。フォトマスクのパターンは、上面側においては、パッド部１１および接続エリア１２の位置および形状に対応し、下面側においては、放熱部１３Ａおよび１３Ｂの位置および形状に対応している。   Next, the resist layer 31 is exposed and developed using a photomask (not shown) having a predetermined pattern, and as shown in FIG. 4B, the upper surface 30A and the lower surface 30B of the metal plate 30. A resist pattern 32 is formed on the substrate (resist pattern forming step). The pattern of the photomask corresponds to the position and shape of the pad portion 11 and the connection area 12 on the upper surface side, and corresponds to the position and shape of the heat radiation portions 13A and 13B on the lower surface side.

次に、図４（ｃ）に示すように、金属板３０の上面３０Ａおよび下面３０Ｂ側から塩化第二鉄等のエッチャントを用いてエッチング加工する（エッチング工程）。これにより、レジストパターン３２の存在しない部位が金属板３０の厚さ方向にエッチングされて接続面１５Ａおよび１５Ｂが形成される。   Next, as shown in FIG.4 (c), it etches using etchants, such as ferric chloride, from the upper surface 30A side and the lower surface 30B side of the metal plate 30 (etching process). As a result, the portion where the resist pattern 32 does not exist is etched in the thickness direction of the metal plate 30 to form the connection surfaces 15A and 15B.

続いて、エッチング後の金属板３０にレジストパターン３２をつけたまま、接続面１５Ａおよび１５Ｂに粗化処理を施し、所定の粗さ以上に粗化する。粗化処理の方法は特に限定されず、目標とする比表面積値等に基づき公知の方法が適宜選択されてよい。粗化処理が終わると、図４（ｄ）に示すように、接続面１５Ａおよび１５Ｂが粗化されるが、レジストパターン３２に被覆されたパッド部１１、接続エリア１２、および放熱部１３Ａ、１３Ｂは粗化されず、平坦な状態が保持される。   Subsequently, the connecting surfaces 15A and 15B are subjected to a roughening process with the resist pattern 32 attached to the etched metal plate 30, and roughened to a predetermined roughness or more. The method for the roughening treatment is not particularly limited, and a known method may be appropriately selected based on a target specific surface area value or the like. When the roughening process is finished, the connection surfaces 15A and 15B are roughened as shown in FIG. 4D, but the pad portion 11, the connection area 12, and the heat radiation portions 13A and 13B covered with the resist pattern 32 are obtained. Is not roughened and is kept flat.

図４（ｅ）に示すように、レジストパターン３２を除去すると、パッド部１１および接続エリア１２と、放熱部１３Ａおよび１３Ｂとを有するリードフレーム１０が完成する。 As shown in FIG. 4E, when the resist pattern 32 is removed, the lead frame 10 having the pad portion 11 and the connection area 12 and the heat radiation portions 13A and 13B is completed.

続く樹脂部形成工程では、図４（ｆ）に示すように、上型１０５と下型１０６とでリードフレーム１０を厚さ方向に挟み、公知のトランスファーモールドによって樹脂材料（モールド樹脂）を充填し、図４（ｇ）に示すように、充填部２１およびリフレクター部２２を有する樹脂部２０を形成する。このとき、接続面１５Ａおよび１５Ｂが粗化されているため、充填部２１は、接続面１５Ａおよび１５Ｂにしっかり食いつき、リードフレーム１０と樹脂部２０との密着性が高くなる。   In the subsequent resin portion forming step, as shown in FIG. 4 (f), the lead frame 10 is sandwiched between the upper die 105 and the lower die 106 in the thickness direction, and a resin material (mold resin) is filled by a known transfer mold. As shown in FIG. 4G, a resin part 20 having a filling part 21 and a reflector part 22 is formed. At this time, since the connection surfaces 15A and 15B are roughened, the filling portion 21 firmly bites the connection surfaces 15A and 15B, and the adhesion between the lead frame 10 and the resin portion 20 is increased.

樹脂部２０が形成されたリードフレーム１０に対して、必要に応じてパッド部１１、接続エリア１２、および放熱部１３Ａ、１３Ｂ上に残存する樹脂バリ等を除去した後、図４（ｈ）に示すように、パッド部１１、接続エリア１２、および放熱部１３Ａ、１３Ｂに対してメッキ処理を行い、メッキ層１４を形成する。（メッキ処理工程）。メッキの種類としては、銀メッキ、金メッキ、パラジウムメッキなどを用いることができる。また、これらのメッキ処理を施す前に、耐熱拡散性が優れたニッケルメッキなどの下地メッキを施してもよい。
メッキ処理工程が終わると、リードフレーム基板１が完成する。 After removing the resin burrs and the like remaining on the pad portion 11, the connection area 12, and the heat radiating portions 13A and 13B as necessary, the lead frame 10 on which the resin portion 20 is formed is shown in FIG. As shown, plating is performed on the pad portion 11, the connection area 12, and the heat radiating portions 13 </ b> A and 13 </ b> B to form a plated layer 14. (Plating process). As the type of plating, silver plating, gold plating, palladium plating, or the like can be used. Moreover, before performing these plating processes, you may perform base plating, such as nickel plating excellent in heat-resistant diffusivity.
When the plating process is completed, the lead frame substrate 1 is completed.

本実施形態のリードフレーム１０によれば、接続面１５Ａおよび１５Ｂが粗化されているため、樹脂部２０との密着性が高いリードフレームとすることができる。   According to the lead frame 10 of the present embodiment, since the connection surfaces 15A and 15B are roughened, a lead frame having high adhesion to the resin portion 20 can be obtained.

また、厚さ方向両面に形成されたパッド部１１、接続エリア１２、および放熱部１３Ａ、１３Ｂ（以下、「パッド部１１等」と称する。）は粗化されず平坦である。このため、トランスファーモールドにより樹脂部２０を形成する際に、樹脂材料が毛細管現象によりパッド部１１等の表面の微小凹凸内に進入して形成される樹脂バリ等を好適に抑制することができるとともに、パッド部１１等の上面に発生した樹脂バリも取れやすくなる。   Further, the pad portion 11, the connection area 12, and the heat radiating portions 13A and 13B (hereinafter referred to as “pad portion 11 etc.”) formed on both surfaces in the thickness direction are flattened without being roughened. Therefore, when the resin portion 20 is formed by transfer molding, it is possible to suitably suppress resin burrs and the like that are formed by the resin material entering into the fine irregularities on the surface of the pad portion 11 and the like due to capillary action. Resin burrs generated on the upper surface of the pad portion 11 and the like can be easily removed.

また、本実施形態のリードフレームの製造方法によれば、エッチング工程で使用したレジストパターン３２をそのままパッド部１１等を粗化処理から保護する保護層として利用する。したがって、新たにパッド部１１等を保護層で被覆する工程を設ける必要がなく、効率よくリードフレームを製造することができる。   Further, according to the lead frame manufacturing method of the present embodiment, the resist pattern 32 used in the etching process is used as it is as a protective layer for protecting the pad portion 11 and the like from the roughening treatment. Therefore, it is not necessary to newly provide a step of covering the pad portion 11 and the like with the protective layer, and the lead frame can be manufactured efficiently.

また、エッチング工程後のレジストパターン３２は、パッド部１１等の表面を過不足なくほぼ完全に被覆しているため、新たに保護層を設ける場合と比べて、より高精度にパッド部１１等の表面のみを被覆して接続面１５Ａ、１５Ｂのみを粗化することができる。   In addition, since the resist pattern 32 after the etching process almost completely covers the surface of the pad portion 11 and the like, the pad portion 11 and the like can be more accurately compared with the case where a protective layer is newly provided. Only the surface can be covered and only the connection surfaces 15A and 15B can be roughened.

以上、本発明の一実施形態について説明したが、本発明の技術範囲は上記実施の形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において各構成要素に種々の変更を加えたり、削除したりすることが可能である。   Although one embodiment of the present invention has been described above, the technical scope of the present invention is not limited to the above embodiment, and various modifications may be made to each component without departing from the spirit of the present invention. , Can be deleted.

例えば、本発明のリードフレームの製造方法においては、一枚の金属板にパッド部および接続エリアを複数組形成してもよい。このようにすると、パッド部および接続エリアの各組に対応するように複数のリフレクター部を有する樹脂部を形成して、その後、一つずつ切り離すことにより多数のリードフレーム基板を製造することができる。   For example, in the lead frame manufacturing method of the present invention, a plurality of sets of pad portions and connection areas may be formed on a single metal plate. In this way, a large number of lead frame substrates can be manufactured by forming a resin portion having a plurality of reflector portions so as to correspond to each set of pad portions and connection areas, and then separating them one by one. .

１０ ＬＥＤ素子用リードフレーム
１１ パッド部
１２ 接続エリア
２０ 樹脂部
１５Ａ、１５Ｂ 接続面
３０ 金属板
３２ レジストパターン
１００ ＬＥＤ素子
１０１ ワイヤー DESCRIPTION OF SYMBOLS 10 LED element lead frame 11 Pad part 12 Connection area 20 Resin part 15A, 15B Connection surface 30 Metal plate 32 Resist pattern 100 LED element 101 Wire

Claims (3)

厚さ方向における第一面に、ＬＥＤ素子が搭載されるパッド部と、前記パッド部と離間して形成され、ワイヤーを介して前記パッド部に搭載された前記ＬＥＤ素子と電気的に接続される接続エリアとを有するＬＥＤ素子用リードフレームであって、
前記パッド部および前記接続エリアと、前記ＬＥＤ素子用リードフレームの厚さ方向の第二面とを接続する接続面のみが、所定の粗さ以上に粗化されていることを特徴とするＬＥＤ素子用リードフレーム。 The first surface in the thickness direction is formed with a pad portion on which the LED element is mounted, and spaced apart from the pad portion, and is electrically connected to the LED element mounted on the pad portion via a wire. A lead frame for an LED element having a connection area,
Only the connection surface which connects the said pad part and the said connection area, and the 2nd surface of the thickness direction of the said lead frame for LED elements is roughened more than predetermined | prescribed roughness, The LED element characterized by the above-mentioned Lead frame. 前記所定の粗さは、前記接続面の比表面積が１．５倍以上となるように設定されていることを特徴とする請求項１に記載のＬＥＤ素子用リードフレーム。   2. The LED element lead frame according to claim 1, wherein the predetermined roughness is set such that a specific surface area of the connection surface is 1.5 times or more. 3. 厚さ方向の一方の面にＬＥＤ素子が搭載されるパッド部と、前記パッド部と離間して形成され、ワイヤーを介して前記パッド部に搭載された前記ＬＥＤ素子と電気的に接続される接続エリアとを有するＬＥＤ素子用リードフレームの製造方法であって、
金属板の一方の面に所定の形状のレジストパターンを形成し、エッチングによって前記パッド部および前記接続エリアを形成し、
前記レジストパターンによって前記パッド部および前記接続エリアが被覆された状態で、前記パッド部および前記接続エリアと、前記金属板の他方の面とを接続する接続面に粗化処理を施して所定の粗さ以上に粗化することを特徴とするＬＥＤ素子用リードフレームの製造方法。 A pad portion on which the LED element is mounted on one surface in the thickness direction, and a connection formed to be separated from the pad portion and electrically connected to the LED element mounted on the pad portion via a wire An LED element lead frame having an area,
A resist pattern having a predetermined shape is formed on one surface of the metal plate, and the pad portion and the connection area are formed by etching,
In a state where the pad portion and the connection area are covered with the resist pattern, a roughening process is performed on the connection surface that connects the pad portion and the connection area and the other surface of the metal plate to obtain a predetermined roughness. The manufacturing method of the lead frame for LED elements characterized by roughening beyond this.
JP2011042573A 2011-02-28 2011-02-28 Lead frame for led element and method for manufacturing the same Withdrawn JP2012182207A (en)

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WO2014148484A1 (en) * 2013-03-18 2014-09-25 Ｓｈマテリアル株式会社 Lead frame for mounting semiconductor elements, and production method therefor
JP2016058479A (en) * 2014-09-08 2016-04-21 Ｓｈマテリアル株式会社 Lead frame for semiconductor device packaging and manufacturing method thereof
JP2021184458A (en) * 2020-05-21 2021-12-02 健策精密工業股▲ふん▼有限公司 Light-emitting diode module and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148484A1 (en) * 2013-03-18 2014-09-25 Ｓｈマテリアル株式会社 Lead frame for mounting semiconductor elements, and production method therefor
JP2014183134A (en) * 2013-03-18 2014-09-29 Sh Materials Co Ltd Lead frame for mounting semiconductor element, and manufacturing method therefor
CN105190878A (en) * 2013-03-18 2015-12-23 友立材料株式会社 Lead frame for mounting semiconductor elements, and production method therefor
US9691689B2 (en) 2013-03-18 2017-06-27 Sh Materials Co., Ltd. Lead frame for mounting semiconductor element and method for manufacturing the same
JP2016058479A (en) * 2014-09-08 2016-04-21 Ｓｈマテリアル株式会社 Lead frame for semiconductor device packaging and manufacturing method thereof
JP2021184458A (en) * 2020-05-21 2021-12-02 健策精密工業股▲ふん▼有限公司 Light-emitting diode module and manufacturing method thereof
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