JP4271268B2 - イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置 - Google Patents

イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置 Download PDF

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Publication number
JP4271268B2
JP4271268B2 JP27345897A JP27345897A JP4271268B2 JP 4271268 B2 JP4271268 B2 JP 4271268B2 JP 27345897 A JP27345897 A JP 27345897A JP 27345897 A JP27345897 A JP 27345897A JP 4271268 B2 JP4271268 B2 JP 4271268B2
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Prior art keywords
light receiving
image sensor
electrically connected
extraction
film
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Expired - Lifetime
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JP27345897A
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English (en)
Japanese (ja)
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JPH1197690A (ja
JPH1197690A5 (enExample
Inventor
宏勇 張
真之 坂倉
由里香 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP27345897A priority Critical patent/JP4271268B2/ja
Priority to US09/156,461 priority patent/US7046282B1/en
Publication of JPH1197690A publication Critical patent/JPH1197690A/ja
Publication of JPH1197690A5 publication Critical patent/JPH1197690A5/ja
Priority to US11/418,279 priority patent/US7286173B2/en
Priority to US11/838,600 priority patent/US7791117B2/en
Application granted granted Critical
Publication of JP4271268B2 publication Critical patent/JP4271268B2/ja
Priority to US12/875,537 priority patent/US8564035B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
JP27345897A 1997-09-20 1997-09-20 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置 Expired - Lifetime JP4271268B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP27345897A JP4271268B2 (ja) 1997-09-20 1997-09-20 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
US09/156,461 US7046282B1 (en) 1997-09-20 1998-09-18 Image sensor and image sensor integrated type active matrix type display device
US11/418,279 US7286173B2 (en) 1997-09-20 2006-05-04 Image sensor and image sensor integrated type active matrix type display device
US11/838,600 US7791117B2 (en) 1997-09-20 2007-08-14 Image sensor and image sensor integrated type active matrix type display device
US12/875,537 US8564035B2 (en) 1997-09-20 2010-09-03 Image sensor and image sensor integrated type active matrix type display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27345897A JP4271268B2 (ja) 1997-09-20 1997-09-20 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008212007A Division JP5025596B2 (ja) 2008-08-20 2008-08-20 イメージセンサ

Publications (3)

Publication Number Publication Date
JPH1197690A JPH1197690A (ja) 1999-04-09
JPH1197690A5 JPH1197690A5 (enExample) 2005-06-02
JP4271268B2 true JP4271268B2 (ja) 2009-06-03

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JP27345897A Expired - Lifetime JP4271268B2 (ja) 1997-09-20 1997-09-20 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置

Country Status (2)

Country Link
US (4) US7046282B1 (enExample)
JP (1) JP4271268B2 (enExample)

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US20070290246A1 (en) 2007-12-20
US7046282B1 (en) 2006-05-16
US8564035B2 (en) 2013-10-22
US20060227232A1 (en) 2006-10-12
US7286173B2 (en) 2007-10-23
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