JP4230856B2 - 液晶表示装置用アレイ基板とその製造方法 - Google Patents
液晶表示装置用アレイ基板とその製造方法 Download PDFInfo
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- JP4230856B2 JP4230856B2 JP2003301680A JP2003301680A JP4230856B2 JP 4230856 B2 JP4230856 B2 JP 4230856B2 JP 2003301680 A JP2003301680 A JP 2003301680A JP 2003301680 A JP2003301680 A JP 2003301680A JP 4230856 B2 JP4230856 B2 JP 4230856B2
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- 239000000758 substrate Substances 0.000 title claims description 47
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims description 183
- 229910052751 metal Inorganic materials 0.000 claims description 99
- 239000002184 metal Substances 0.000 claims description 99
- 238000000034 method Methods 0.000 claims description 85
- 239000010949 copper Substances 0.000 claims description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 32
- 229910052802 copper Inorganic materials 0.000 claims description 32
- 229910052750 molybdenum Inorganic materials 0.000 claims description 23
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
- 239000011733 molybdenum Substances 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000011651 chromium Substances 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 21
- 239000010408 film Substances 0.000 description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Description
−−第1実施例−−
本発明の第1実施例は、ゲート電極とソース電極及びドレイン電極を形成する時銅を含む二重金属層で形成することを特徴とする。
本発明の第2実施例の特徴は、前記ゲート電極を形成する前に、基板の全面に絶縁膜で保護層を形成するものである。図7A及び図7Bを参照して説明する。図7Aと図7Bは、各々図1のII−II′及びIII−III′に対応した本発明の第2実施例による液晶表示装置用アレイ基板を示した断面図である。
131:ゲート電極
133:ゲート配線
135:ゲートパッド電極
137:ゲート絶縁膜
139:アクティブ層
141:オーミックコンタクト層
149:ソース電極
151:ドレイン電極
153:デート配線
155:データパッド電極
157:ソース−ドレイン金属層
159:保護膜
169:画素電極
171:ゲートパッド電極端子
173:データパッド電極端子
Claims (5)
- 基板上に保護層を形成する段階と;
前記保護層上に、第1金属バッファー層と当該第1金属バッファー層上部の銅との二重層でゲート電極と、ゲート電極と連結したゲート配線と、ゲート配線から延びたゲートパッドを形成する段階と;
前記ゲート電極、ゲート配線及びゲートパッド電極上部に第1絶縁膜を形成する段階と;
前記ゲート電極上部の第1絶縁膜上にアクティブ層とオーミックコンタクト層を形成する段階と;
前記オーミックコンタクト層と接触して、第2金属バッファー層と当該第2金属バッファー層上部の銅との二重層であるソース電極及びドレイン電極と、ソース電極と連結したデータ配線と、データ配線から延びたデータパッドを形成する段階と;
ソース電極とドレイン電極及びデータ配線が形成された基板の全面に、前記ドレイン電極と、ゲートパッドとデータパッドの一部を露出する保護膜を形成する段階と;
前記露出されたドレイン電極と接触する透明画素電極と、ゲートパッドと接触する透明ゲートパッド電極端子と、データパッドと接触する透明データパッド電極端子を形成する段階と;
を含み、
前記第1金属バッファー層は、タンタル(Ta)とチタン(Ti)のうち選択された一つであり、
前記保護層は、窒化シリコン(SiN X )または酸化シリコン(SiO 2 )とベンゾシクロブテン(BCB)またはアクリル系樹脂との二重層で形成された
ことを特徴とする液晶表示装置用アレイ基板の製造方法。 - 前記第2金属バッファー層は、前記オーミックコンタクト層と前記銅との反応を防ぐことができる物質で形成された
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。 - 前記第2バッファー金属層を形成する物質は、タンタル(Ta)、チタン(Ti)、クロム(Cr)、モリブデン(Mo)、ニッケル(Ni)、タングステン(W)で構成された金属グループのうち選択された一つで形成された
ことを特徴とする請求項2に記載の液晶表示装置用アレイ基板の製造方法。 - 前記ゲート配線の一部上部に前記ソース電極及びドレイン電極と同一層同一物質でアイランド状のソース−ドレイン金属層を形成する段階をさらに含む
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。 - 前記ソース−ドレイン金属層は、前記保護膜をエッチングして構成したコンタクトホールを通じて前記画素電極と接触する段階をさらに含む
ことを特徴とする請求項4に記載の液晶表示装置用アレイ基板の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020020052660A KR100866976B1 (ko) | 2002-09-03 | 2002-09-03 | 액정표시장치용 어레이기판과 제조방법 |
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Publication Number | Publication Date |
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JP2004133422A JP2004133422A (ja) | 2004-04-30 |
JP4230856B2 true JP4230856B2 (ja) | 2009-02-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003301680A Expired - Lifetime JP4230856B2 (ja) | 2002-09-03 | 2003-08-26 | 液晶表示装置用アレイ基板とその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7652740B2 (ja) |
JP (1) | JP4230856B2 (ja) |
KR (1) | KR100866976B1 (ja) |
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2002
- 2002-09-03 KR KR1020020052660A patent/KR100866976B1/ko active IP Right Grant
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2003
- 2003-06-30 US US10/608,085 patent/US7652740B2/en not_active Expired - Lifetime
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JP2004133422A (ja) | 2004-04-30 |
KR20040021169A (ko) | 2004-03-10 |
KR100866976B1 (ko) | 2008-11-05 |
US20040041958A1 (en) | 2004-03-04 |
US7652740B2 (en) | 2010-01-26 |
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