JP4131544B2 - 電子回路 - Google Patents

電子回路 Download PDF

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Publication number
JP4131544B2
JP4131544B2 JP2004037242A JP2004037242A JP4131544B2 JP 4131544 B2 JP4131544 B2 JP 4131544B2 JP 2004037242 A JP2004037242 A JP 2004037242A JP 2004037242 A JP2004037242 A JP 2004037242A JP 4131544 B2 JP4131544 B2 JP 4131544B2
Authority
JP
Japan
Prior art keywords
coil
transmission
substrate
circuit
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004037242A
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English (en)
Japanese (ja)
Other versions
JP2005228981A (ja
Inventor
忠広 黒田
大介 溝口
ビンティ ユスフ ユスミラズ
典之 三浦
貴康 櫻井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Keio University
Original Assignee
Keio University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Keio University filed Critical Keio University
Priority to JP2004037242A priority Critical patent/JP4131544B2/ja
Priority to PCT/JP2005/002117 priority patent/WO2005078795A1/ja
Priority to KR1020067017417A priority patent/KR101066128B1/ko
Priority to TW094104197A priority patent/TW200532894A/zh
Priority to US10/588,769 priority patent/US7768790B2/en
Publication of JP2005228981A publication Critical patent/JP2005228981A/ja
Application granted granted Critical
Publication of JP4131544B2 publication Critical patent/JP4131544B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/165Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed inductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F38/00Adaptations of transformers or inductances for specific applications or functions
    • H01F38/14Inductive couplings
    • H01F2038/143Inductive couplings for signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06527Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/0239Signal transmission by AC coupling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Near-Field Transmission Systems (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc Digital Transmission (AREA)
JP2004037242A 2004-02-13 2004-02-13 電子回路 Expired - Lifetime JP4131544B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004037242A JP4131544B2 (ja) 2004-02-13 2004-02-13 電子回路
PCT/JP2005/002117 WO2005078795A1 (ja) 2004-02-13 2005-02-14 電子回路
KR1020067017417A KR101066128B1 (ko) 2004-02-13 2005-02-14 전자회로
TW094104197A TW200532894A (en) 2004-02-13 2005-02-14 Electronic circuit
US10/588,769 US7768790B2 (en) 2004-02-13 2005-02-14 Electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004037242A JP4131544B2 (ja) 2004-02-13 2004-02-13 電子回路

Publications (2)

Publication Number Publication Date
JP2005228981A JP2005228981A (ja) 2005-08-25
JP4131544B2 true JP4131544B2 (ja) 2008-08-13

Family

ID=34857752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004037242A Expired - Lifetime JP4131544B2 (ja) 2004-02-13 2004-02-13 電子回路

Country Status (5)

Country Link
US (1) US7768790B2 (enExample)
JP (1) JP4131544B2 (enExample)
KR (1) KR101066128B1 (enExample)
TW (1) TW200532894A (enExample)
WO (1) WO2005078795A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012049821A1 (ja) 2010-10-13 2012-04-19 パナソニック株式会社 近接無線通信を用いた半導体装置

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4124365B2 (ja) 2004-08-24 2008-07-23 学校法人慶應義塾 電子回路
JP5024740B2 (ja) 2004-09-30 2012-09-12 学校法人慶應義塾 Lsiチップ試験装置
JP2006173986A (ja) 2004-12-15 2006-06-29 Keio Gijuku 電子回路
US8190086B2 (en) 2005-09-02 2012-05-29 Nec Corporation Transmission method, interface circuit, semiconductor device, semiconductor package, semiconductor module and memory module
JP4592542B2 (ja) * 2005-09-08 2010-12-01 三菱電機株式会社 半導体装置
JP4655891B2 (ja) * 2005-11-02 2011-03-23 ソニー株式会社 通信用半導体チップ、キャリブレーション方法、並びにプログラム
WO2007086285A1 (ja) * 2006-01-30 2007-08-02 Nec Corporation 信号伝送方式及び半導体集積回路装置
JP4544181B2 (ja) 2006-03-03 2010-09-15 セイコーエプソン株式会社 電子基板、半導体装置および電子機器
WO2007111036A1 (ja) * 2006-03-24 2007-10-04 Nec Corporation 半導体装置
JP4878502B2 (ja) 2006-05-29 2012-02-15 ルネサスエレクトロニクス株式会社 半導体装置
JPWO2007145086A1 (ja) * 2006-06-12 2009-10-29 日本電気株式会社 半導体装置、信号伝送装置および信号伝送方法
US8243467B2 (en) 2007-02-13 2012-08-14 Nec Corporation Semiconductor device
JP5229213B2 (ja) 2007-02-23 2013-07-03 日本電気株式会社 インダクタ結合を用いて信号伝送を行う半導体装置
EP1988575A3 (en) * 2007-03-26 2008-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5149554B2 (ja) * 2007-07-17 2013-02-20 株式会社日立製作所 半導体装置
JP2009032857A (ja) * 2007-07-26 2009-02-12 Hitachi Ltd 半導体集積回路および半導体装置
JP5491868B2 (ja) * 2007-11-26 2014-05-14 学校法人慶應義塾 電子回路
JP5600237B2 (ja) * 2008-02-02 2014-10-01 学校法人慶應義塾 集積回路
US8363989B2 (en) 2008-03-24 2013-01-29 Nec Corporation Semiconductor optical interconnection device and semiconductor optical interconnection method
JP5258343B2 (ja) 2008-03-27 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置及び半導体集積回路
JP5475962B2 (ja) 2008-04-28 2014-04-16 学校法人慶應義塾 電子回路
JP5050986B2 (ja) 2008-04-30 2012-10-17 ソニー株式会社 通信システム
JP5252486B2 (ja) * 2008-05-14 2013-07-31 学校法人慶應義塾 インダクタ素子、集積回路装置、及び、三次元実装回路装置
JP4698702B2 (ja) * 2008-05-22 2011-06-08 三菱電機株式会社 電子機器
JP5671200B2 (ja) * 2008-06-03 2015-02-18 学校法人慶應義塾 電子回路
JP4982778B2 (ja) 2008-07-04 2012-07-25 学校法人慶應義塾 電子回路装置
JP5325495B2 (ja) * 2008-08-12 2013-10-23 学校法人慶應義塾 半導体装置及びその製造方法
JP5474323B2 (ja) * 2008-08-26 2014-04-16 学校法人慶應義塾 電子回路
JP4977101B2 (ja) 2008-08-26 2012-07-18 株式会社東芝 積層型半導体装置
JP5536656B2 (ja) 2008-09-18 2014-07-02 ルネサスエレクトロニクス株式会社 半導体装置
JP5374994B2 (ja) 2008-09-25 2013-12-25 ソニー株式会社 ミリ波誘電体内伝送装置
JP5433199B2 (ja) 2008-10-21 2014-03-05 学校法人慶應義塾 電子回路
JP5326088B2 (ja) 2008-10-21 2013-10-30 学校法人慶應義塾 電子回路と通信機能検査方法
JP5216532B2 (ja) * 2008-10-30 2013-06-19 株式会社日立製作所 半導体集積回路
JP5283075B2 (ja) 2008-12-26 2013-09-04 学校法人慶應義塾 電子回路
JP5395458B2 (ja) 2009-02-25 2014-01-22 学校法人慶應義塾 インダクタ素子及び集積回路装置
JP5238562B2 (ja) * 2009-03-13 2013-07-17 ルネサスエレクトロニクス株式会社 半導体装置
JP5169985B2 (ja) 2009-05-12 2013-03-27 富士ゼロックス株式会社 半導体装置
JP5374246B2 (ja) 2009-06-12 2013-12-25 学校法人慶應義塾 密封型半導体記録媒体及び密封型半導体記録装置
US9305606B2 (en) 2009-08-17 2016-04-05 Micron Technology, Inc. High-speed wireless serial communication link for a stacked device configuration using near field coupling
JP5635759B2 (ja) 2009-10-15 2014-12-03 学校法人慶應義塾 積層半導体集積回路装置
JP2011233842A (ja) 2010-04-30 2011-11-17 Toshiba Corp 不揮発性半導体記憶装置
KR101717982B1 (ko) * 2010-09-14 2017-03-21 삼성전자 주식회사 커플링 도전 패턴을 포함하는 반도체 장치
EP2617207A2 (en) * 2010-09-17 2013-07-24 Cascade Microtech, Inc. Systems and methods for non-contact power and data transfer in electronic devices
JP5771505B2 (ja) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 受信回路
JP5750031B2 (ja) 2010-11-19 2015-07-15 株式会社半導体エネルギー研究所 電子回路及び半導体装置
US8476771B2 (en) 2011-08-25 2013-07-02 International Business Machines Corporation Configuration of connections in a 3D stack of integrated circuits
US8587357B2 (en) 2011-08-25 2013-11-19 International Business Machines Corporation AC supply noise reduction in a 3D stack with voltage sensing and clock shifting
US8576000B2 (en) 2011-08-25 2013-11-05 International Business Machines Corporation 3D chip stack skew reduction with resonant clock and inductive coupling
US8516426B2 (en) 2011-08-25 2013-08-20 International Business Machines Corporation Vertical power budgeting and shifting for three-dimensional integration
US8476953B2 (en) * 2011-08-25 2013-07-02 International Business Machines Corporation 3D integrated circuit stack-wide synchronization circuit
US8381156B1 (en) 2011-08-25 2013-02-19 International Business Machines Corporation 3D inter-stratum connectivity robustness
US8525569B2 (en) 2011-08-25 2013-09-03 International Business Machines Corporation Synchronizing global clocks in 3D stacks of integrated circuits by shorting the clock network
US8519735B2 (en) 2011-08-25 2013-08-27 International Business Machines Corporation Programming the behavior of individual chips or strata in a 3D stack of integrated circuits
JP6233716B2 (ja) 2012-09-18 2017-11-22 パナソニックIpマネジメント株式会社 アンテナ、送信装置、受信装置、三次元集積回路、及び非接触通信システム
KR102048443B1 (ko) * 2012-09-24 2020-01-22 삼성전자주식회사 근거리 무선 송수신 방법 및 장치
US9094913B2 (en) 2012-11-20 2015-07-28 Georgia Tech Research Corporation Wideband data and power transmission using pulse delay modulation
US9509375B2 (en) 2013-08-01 2016-11-29 SK Hynix Inc. Wireless transceiver circuit with reduced area
KR101456795B1 (ko) * 2013-08-26 2014-10-31 숭실대학교산학협력단 칩 간 무선 전력 전송을 위한 안테나
JP5790725B2 (ja) * 2013-09-17 2015-10-07 ソニー株式会社 伝送装置とその製造方法及び伝送方法
JP6138032B2 (ja) 2013-11-21 2017-05-31 株式会社ThruChip Japan 集積回路及びそれを備える積層回路
EP3118892B1 (en) 2014-03-12 2018-05-02 Thruchip Japan Inc. Laminated semiconductor integrated circuit device
JP6570954B2 (ja) 2015-09-30 2019-09-04 学校法人慶應義塾 半導体チップ及びマルチチップモジュール
CN114121895A (zh) 2016-02-10 2022-03-01 超极存储器股份有限公司 半导体装置
US10571487B2 (en) 2016-11-30 2020-02-25 Formfactor Beaverton, Inc. Contact engines, probe head assemblies, probe systems, and associated methods for on-wafer testing of the wireless operation of a device under test
TW201838094A (zh) 2017-02-16 2018-10-16 學校法人慶應義塾 層疊半導體積體電路裝置
GB2565310B (en) * 2017-08-08 2020-05-13 Advanced Risc Mach Ltd 3D interconnected die stack
JP7158834B2 (ja) * 2017-09-07 2022-10-24 キヤノン株式会社 通信装置
US10486899B1 (en) * 2018-12-03 2019-11-26 Dooli Products, LLC Waste disposal device with bag-grabbing membrane
US10611564B1 (en) 2019-01-02 2020-04-07 Dooli Products, LLC Height adjustable waste disposal device with bag-grabbing membrane
US11008162B1 (en) 2020-02-03 2021-05-18 Dooli Products, LLC Baby and adult-safe waste container with bag handling odor control assembly
USD895918S1 (en) 2020-02-07 2020-09-08 Dooli Products, LLC Vertically oriented container with a lid
USD895919S1 (en) 2020-02-07 2020-09-08 Dooli Products, LLC Container with a lid
US12306243B2 (en) 2023-06-12 2025-05-20 Formfactor, Inc. Space transformers configured to be utilized in a probe system, probe systems that include the space transformers, and related methods
CN120221213A (zh) * 2025-05-28 2025-06-27 艾科思电子科技(常州)有限公司 低占用空间的输入线圈和金属探测器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6000128A (en) * 1994-06-21 1999-12-14 Sumitomo Special Metals Co., Ltd. Process of producing a multi-layered printed-coil substrate
US5701037A (en) * 1994-11-15 1997-12-23 Siemens Aktiengesellschaft Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit
JPH1168033A (ja) * 1997-08-15 1999-03-09 Matsushita Electric Ind Co Ltd マルチチップモジュール
JP2000124406A (ja) 1998-10-16 2000-04-28 Synthesis Corp 集積回路用データ通信装置ならびに集積回路チップおよびこの集積回路チップを用いた集積回路
US6262600B1 (en) * 2000-02-14 2001-07-17 Analog Devices, Inc. Isolator for transmitting logic signals across an isolation barrier
JP2002252324A (ja) 2001-02-23 2002-09-06 Hitachi Ltd 半導体装置およびその製造方法
JP2002368118A (ja) 2001-06-04 2002-12-20 Sony Corp 半導体装置およびその製造方法
US7460604B2 (en) * 2004-06-03 2008-12-02 Silicon Laboratories Inc. RF isolator for isolating voltage sensing and gate drivers
JP3905101B2 (ja) * 2004-08-20 2007-04-18 株式会社半導体理工学研究センター 出力可変型電源回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012049821A1 (ja) 2010-10-13 2012-04-19 パナソニック株式会社 近接無線通信を用いた半導体装置
US8952472B2 (en) 2010-10-13 2015-02-10 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device using close proximity wireless communication

Also Published As

Publication number Publication date
JP2005228981A (ja) 2005-08-25
US7768790B2 (en) 2010-08-03
KR101066128B1 (ko) 2011-09-20
TWI364106B (enExample) 2012-05-11
US20070289772A1 (en) 2007-12-20
WO2005078795A1 (ja) 2005-08-25
KR20070007089A (ko) 2007-01-12
TW200532894A (en) 2005-10-01

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