GB2565310B - 3D interconnected die stack - Google Patents
3D interconnected die stack Download PDFInfo
- Publication number
- GB2565310B GB2565310B GB1712731.7A GB201712731A GB2565310B GB 2565310 B GB2565310 B GB 2565310B GB 201712731 A GB201712731 A GB 201712731A GB 2565310 B GB2565310 B GB 2565310B
- Authority
- GB
- United Kingdom
- Prior art keywords
- die stack
- interconnected die
- interconnected
- stack
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/40—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by components specially adapted for near-field transmission
- H04B5/48—Transceivers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/17181—On opposite sides of the body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1712731.7A GB2565310B (en) | 2017-08-08 | 2017-08-08 | 3D interconnected die stack |
PCT/GB2018/052179 WO2019030500A1 (en) | 2017-08-08 | 2018-07-31 | 3d interconnected die stack |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1712731.7A GB2565310B (en) | 2017-08-08 | 2017-08-08 | 3D interconnected die stack |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201712731D0 GB201712731D0 (en) | 2017-09-20 |
GB2565310A GB2565310A (en) | 2019-02-13 |
GB2565310B true GB2565310B (en) | 2020-05-13 |
Family
ID=59894767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1712731.7A Active GB2565310B (en) | 2017-08-08 | 2017-08-08 | 3D interconnected die stack |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2565310B (en) |
WO (1) | WO2019030500A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11581272B2 (en) * | 2019-03-22 | 2023-02-14 | Intel Corporation | Contactless high-frequency interconnect |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070289772A1 (en) * | 2004-02-13 | 2007-12-20 | Tadahiro Kuroda | Electronic Circuit |
JP2010206023A (en) * | 2009-03-04 | 2010-09-16 | Toshiba Corp | Cluster, and spin ram and spin torque oscillator using the same |
US20110039493A1 (en) * | 2007-11-26 | 2011-02-17 | Keio University | Electronic circuit |
US20120100810A1 (en) * | 2010-10-25 | 2012-04-26 | Markku Anttoni Oksanen | Apparatus for Spectrum Sensing and Associated Methods |
US20150084972A1 (en) * | 2013-09-25 | 2015-03-26 | Qualcomm Incorporated | Contactless data communication using in-plane magnetic fields, and related systems and methods |
US20160180906A1 (en) * | 2014-12-22 | 2016-06-23 | Kabushik Kaisha Toshiba | Magnetic recording apparatus |
US20160359458A1 (en) * | 2014-11-13 | 2016-12-08 | Regents Of The University Of Minnesota | Spin current generation with nano-oscillator |
US20170026207A1 (en) * | 2015-07-21 | 2017-01-26 | Tdk Corporation | Microwave receiver and magnetoresistive device |
-
2017
- 2017-08-08 GB GB1712731.7A patent/GB2565310B/en active Active
-
2018
- 2018-07-31 WO PCT/GB2018/052179 patent/WO2019030500A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070289772A1 (en) * | 2004-02-13 | 2007-12-20 | Tadahiro Kuroda | Electronic Circuit |
US20110039493A1 (en) * | 2007-11-26 | 2011-02-17 | Keio University | Electronic circuit |
JP2010206023A (en) * | 2009-03-04 | 2010-09-16 | Toshiba Corp | Cluster, and spin ram and spin torque oscillator using the same |
US20120100810A1 (en) * | 2010-10-25 | 2012-04-26 | Markku Anttoni Oksanen | Apparatus for Spectrum Sensing and Associated Methods |
US20150084972A1 (en) * | 2013-09-25 | 2015-03-26 | Qualcomm Incorporated | Contactless data communication using in-plane magnetic fields, and related systems and methods |
US20160359458A1 (en) * | 2014-11-13 | 2016-12-08 | Regents Of The University Of Minnesota | Spin current generation with nano-oscillator |
US20160180906A1 (en) * | 2014-12-22 | 2016-06-23 | Kabushik Kaisha Toshiba | Magnetic recording apparatus |
US20170026207A1 (en) * | 2015-07-21 | 2017-01-26 | Tdk Corporation | Microwave receiver and magnetoresistive device |
Non-Patent Citations (5)
Title |
---|
Hubner M et al, 'GREAT: HeteroGeneous IntegRated Magnetic tEchnology Using Multifunctional Standardized sTack' 2017 IEEE Computer Society Annual Symposium on VLSI (ISVLSI). Proceeding 3-5 July 2017, pages 344-349. ISBN 978-1-5090-6762-6, doi:10.1109/ISVLSI.2017.67 * |
Hyen S Choi et al, 'spin nano-oscillator-based wireless communication' Scientific reports 4, 5486 (Pub June 2014). doi :10.1038/srep05486 www.nature.com/scientificreports * |
Ramaswamy B et al, 'Wireless current sensing by near field induction from a spin transfer torque nano-oscillator' , Applied Physics Letters, 13th June 2016, Irvine USA, Vol 108, Nr 24 pages 242403 (5 pages), ISSN 0003-6951. doi:10.1063/1.4953621 * |
Sharma R, 'Modulation rate study in spin torque oscillator based wireless communication system', 2015 IEEE International Magnetics Conference (INTERMAG), 1 page, 11-15 May 2015. ISBN 978-1-4799-7321-7, doi:10.1109/INTMAG.2015.7157688. * |
Shingo Tamura et al ' Extremely Coherent Microwave Emission from Spin Torque Oscillator Stabilized by Phase Locked Loop' scientific Reports 5 18134 (Pub December 2015) doi:10.1038/srep18134 www.nature.com/articles/srep18134 * |
Also Published As
Publication number | Publication date |
---|---|
WO2019030500A1 (en) | 2019-02-14 |
GB2565310A (en) | 2019-02-13 |
GB201712731D0 (en) | 2017-09-20 |
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