GB2565310B - 3D interconnected die stack - Google Patents

3D interconnected die stack Download PDF

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Publication number
GB2565310B
GB2565310B GB1712731.7A GB201712731A GB2565310B GB 2565310 B GB2565310 B GB 2565310B GB 201712731 A GB201712731 A GB 201712731A GB 2565310 B GB2565310 B GB 2565310B
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GB
United Kingdom
Prior art keywords
die stack
interconnected die
interconnected
stack
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1712731.7A
Other versions
GB2565310A (en
GB201712731D0 (en
Inventor
John Goodacre Anthony
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ARM Ltd
Original Assignee
ARM Ltd
Advanced Risc Machines Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ARM Ltd, Advanced Risc Machines Ltd filed Critical ARM Ltd
Priority to GB1712731.7A priority Critical patent/GB2565310B/en
Publication of GB201712731D0 publication Critical patent/GB201712731D0/en
Priority to PCT/GB2018/052179 priority patent/WO2019030500A1/en
Publication of GB2565310A publication Critical patent/GB2565310A/en
Application granted granted Critical
Publication of GB2565310B publication Critical patent/GB2565310B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/40—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by components specially adapted for near-field transmission
    • H04B5/48—Transceivers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/171—Disposition
    • H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/17181—On opposite sides of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
GB1712731.7A 2017-08-08 2017-08-08 3D interconnected die stack Active GB2565310B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1712731.7A GB2565310B (en) 2017-08-08 2017-08-08 3D interconnected die stack
PCT/GB2018/052179 WO2019030500A1 (en) 2017-08-08 2018-07-31 3d interconnected die stack

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1712731.7A GB2565310B (en) 2017-08-08 2017-08-08 3D interconnected die stack

Publications (3)

Publication Number Publication Date
GB201712731D0 GB201712731D0 (en) 2017-09-20
GB2565310A GB2565310A (en) 2019-02-13
GB2565310B true GB2565310B (en) 2020-05-13

Family

ID=59894767

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1712731.7A Active GB2565310B (en) 2017-08-08 2017-08-08 3D interconnected die stack

Country Status (2)

Country Link
GB (1) GB2565310B (en)
WO (1) WO2019030500A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11581272B2 (en) * 2019-03-22 2023-02-14 Intel Corporation Contactless high-frequency interconnect

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070289772A1 (en) * 2004-02-13 2007-12-20 Tadahiro Kuroda Electronic Circuit
JP2010206023A (en) * 2009-03-04 2010-09-16 Toshiba Corp Cluster, and spin ram and spin torque oscillator using the same
US20110039493A1 (en) * 2007-11-26 2011-02-17 Keio University Electronic circuit
US20120100810A1 (en) * 2010-10-25 2012-04-26 Markku Anttoni Oksanen Apparatus for Spectrum Sensing and Associated Methods
US20150084972A1 (en) * 2013-09-25 2015-03-26 Qualcomm Incorporated Contactless data communication using in-plane magnetic fields, and related systems and methods
US20160180906A1 (en) * 2014-12-22 2016-06-23 Kabushik Kaisha Toshiba Magnetic recording apparatus
US20160359458A1 (en) * 2014-11-13 2016-12-08 Regents Of The University Of Minnesota Spin current generation with nano-oscillator
US20170026207A1 (en) * 2015-07-21 2017-01-26 Tdk Corporation Microwave receiver and magnetoresistive device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070289772A1 (en) * 2004-02-13 2007-12-20 Tadahiro Kuroda Electronic Circuit
US20110039493A1 (en) * 2007-11-26 2011-02-17 Keio University Electronic circuit
JP2010206023A (en) * 2009-03-04 2010-09-16 Toshiba Corp Cluster, and spin ram and spin torque oscillator using the same
US20120100810A1 (en) * 2010-10-25 2012-04-26 Markku Anttoni Oksanen Apparatus for Spectrum Sensing and Associated Methods
US20150084972A1 (en) * 2013-09-25 2015-03-26 Qualcomm Incorporated Contactless data communication using in-plane magnetic fields, and related systems and methods
US20160359458A1 (en) * 2014-11-13 2016-12-08 Regents Of The University Of Minnesota Spin current generation with nano-oscillator
US20160180906A1 (en) * 2014-12-22 2016-06-23 Kabushik Kaisha Toshiba Magnetic recording apparatus
US20170026207A1 (en) * 2015-07-21 2017-01-26 Tdk Corporation Microwave receiver and magnetoresistive device

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Hubner M et al, 'GREAT: HeteroGeneous IntegRated Magnetic tEchnology Using Multifunctional Standardized sTack' 2017 IEEE Computer Society Annual Symposium on VLSI (ISVLSI). Proceeding 3-5 July 2017, pages 344-349. ISBN 978-1-5090-6762-6, doi:10.1109/ISVLSI.2017.67 *
Hyen S Choi et al, 'spin nano-oscillator-based wireless communication' Scientific reports 4, 5486 (Pub June 2014). doi :10.1038/srep05486 www.nature.com/scientificreports *
Ramaswamy B et al, 'Wireless current sensing by near field induction from a spin transfer torque nano-oscillator' , Applied Physics Letters, 13th June 2016, Irvine USA, Vol 108, Nr 24 pages 242403 (5 pages), ISSN 0003-6951. doi:10.1063/1.4953621 *
Sharma R, 'Modulation rate study in spin torque oscillator based wireless communication system', 2015 IEEE International Magnetics Conference (INTERMAG), 1 page, 11-15 May 2015. ISBN 978-1-4799-7321-7, doi:10.1109/INTMAG.2015.7157688. *
Shingo Tamura et al ' Extremely Coherent Microwave Emission from Spin Torque Oscillator Stabilized by Phase Locked Loop' scientific Reports 5 18134 (Pub December 2015) doi:10.1038/srep18134 www.nature.com/articles/srep18134 *

Also Published As

Publication number Publication date
WO2019030500A1 (en) 2019-02-14
GB2565310A (en) 2019-02-13
GB201712731D0 (en) 2017-09-20

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