JP5491868B2 - 電子回路 - Google Patents
電子回路 Download PDFInfo
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- JP5491868B2 JP5491868B2 JP2009543770A JP2009543770A JP5491868B2 JP 5491868 B2 JP5491868 B2 JP 5491868B2 JP 2009543770 A JP2009543770 A JP 2009543770A JP 2009543770 A JP2009543770 A JP 2009543770A JP 5491868 B2 JP5491868 B2 JP 5491868B2
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- 239000000758 substrate Substances 0.000 claims description 214
- 238000004891 communication Methods 0.000 claims description 68
- 230000005540 biological transmission Effects 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 20
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Near-Field Transmission Systems (AREA)
- Combinations Of Printed Boards (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Description
250、260、390、690 制御基板
11、12、21、22、31、32、41、42、51、52、61、62、111、112、121、122、131、132、141、142、171、172、181、182、221、222、241、242、551、552、611、612、621、622 アンテナ
251、252、261、262、691、692、693 制御アンテナ
13、14、23、24、33、34、43、44、53、54、63、34、113、114、123、124、133、134、43、144、173、174、183、184、253、254、263、264 送受信器
15、25、35、45、55、65、115、125、135、145、175、185、615、625 ID素子
16、26、36、46、56、66、76、86、91、92、93、94、95、96、97、98、116、126、136、146、176、186、216、226、236、246、256、316、326、336、346、356、366、376、386、396、416、426、436、446、516、526、536、546、556、616、626、636、646、656、666、676、686、696 ワイヤボンディング
17、18、27、28 セレクタ
100 接着剤
ただし、
D:送信コイル及び受信コイルの直径
X:送信コイルと受信コイル間の距離
Y:同時に送信する別の送信コイルと受信コイル間の距離
k:送信コイルと受信コイル間の結合係数
S:受信コイルで送信コイルから受信する信号の強度
I:受信コイルで別の送信コイルから受信する干渉の強度
k≧−20dB(真数で0.1以上)、
S/I≧10dB(真数でS/I=3倍程度)
とすれば、
1≧X/D≧2.5(Y/X=2のとき)、
≧5(Y/X=3のとき)、
≧7(Y/X=4のとき)
非同期再生の場合はノイズ耐性が弱いので、
k≧−20dB(真数で0.1以上)、
S/I≧20dB(真数でS/I=10倍)
とすれば、
1≧X/D≧2.1(Y/X=3のとき)、
≧3.3(Y/X=4のとき)
Y/X=2の場合に解はない、つまりY/X=2の別の送信コイルからは同時に送信してはいけないことなる。
Claims (11)
- 基板上に所定の間隔で第1及び第2アンテナが形成されている第1基板と、
該第1基板と同一外観形状であり、第1基板における第1及び第2アンテナが形成されている位置の基板上にそれぞれ第3及び第4アンテナが形成されていて、第1アンテナと第4アンテナとを無線通信させて第1基板と重ならない部分にワイヤボンディングされて第1基板に積層実装されている第2基板と
を備えることを特徴とする電子回路。 - 前記第1基板と第2基板とは90度又は180度異なる方向に積層実装されていることを特徴とする請求項1記載の電子回路。
- 前記第1及び第2基板に該基板の積層位置に関する情報を外部から与える手段を更に備えることを特徴とする請求項1又は2記載の電子回路。
- 前記第1及び第4アンテナと通信する制御アンテナを有し、前記第1基板と第2基板との間のデータ通信、又は、第1及び第2基板と外部との間のデータ通信を制御する制御基板を更に備えることを特徴とする請求項1乃至3いずれかに記載の電子回路。
- 前記制御基板は、前記第1及び第2基板と同一外観形状であることを特徴とする請求項4記載の電子回路。
- 前記制御基板は、前記第1及び第2基板にランダムにアクセスして外部とのデータ通信を制御することを特徴とする請求項4又は5記載の電子回路。
- 前記制御基板は、前記第1及び第2基板の間でランダムにアクセスするデータ通信を制御することを特徴とする請求項4又は5記載の電子回路。
- 前記第1及び第2基板と同一外観形状であり、第1基板における第1及び第2アンテナが形成されている位置の基板上にそれぞれ第5及び第6アンテナが形成されていて、第3アンテナと第6アンテナとを無線通信させて、第1基板とで第2基板を挟み、第2基板と重ならない部分にワイヤボンディングされて第2基板に積層実装されている第3基板を更に備え、
第1基板の制御に従い第1基板から第2基板へ、そして、第2基板の制御に従い第2基板から第3基板へ、と逐次データ転送を行うことを特徴とする請求項1乃至3いずれかに記載の電子回路。 - 前記第1及び第2基板と同一外観形状であり、第1基板における第1及び第2アンテナが形成されている位置の基板上にそれぞれ第5及び第6アンテナが形成されていて、第3アンテナと第6アンテナとを無線通信させて、第1基板とで第2基板を挟み、第2基板と重ならない部分にワイヤボンディングされて第2基板に積層実装されている第3基板を更に備え、
前記制御基板の制御に従い、第1基板から第2基板へ、そして、第2基板から第3基板へ、と逐次データ転送を行うことを特徴とする請求項4又は5記載の電子回路。 - それぞれ2つ以上の第1及び第2基板が交互に積層実装され、各基板の第1及び第4アンテナが重ねて配置され、それらのアンテナを介して複数の通信が混信しない程度に離れて同時に行われることを特徴とする請求項1乃至3いずれかに記載の電子回路。
- 各前記アンテナはコイルによって構成されており、第2コイルに信号を送信する第1コイル、該信号を受信する第2コイル並びに該第1及び第2コイルに重ねて配置され第1コイルと同時に別に送信する第3コイルを備え、該第1乃至第3コイルの直径が、第1コイルと第2コイル間の距離に相当する程度の所定の大きさ以上であって、第2コイルにおいて第3コイルからの受信が第1コイルからの受信に支障がない程度の強度となり第2コイルと第3コイル間の距離に依存する所定の大きさ以下であることを特徴とする請求項1乃至10いずれかに記載の電子回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009543770A JP5491868B2 (ja) | 2007-11-26 | 2008-11-20 | 電子回路 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007305143 | 2007-11-26 | ||
JP2007305143 | 2007-11-26 | ||
PCT/JP2008/071159 WO2009069532A1 (ja) | 2007-11-26 | 2008-11-20 | 電子回路 |
JP2009543770A JP5491868B2 (ja) | 2007-11-26 | 2008-11-20 | 電子回路 |
Publications (2)
Publication Number | Publication Date |
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JPWO2009069532A1 JPWO2009069532A1 (ja) | 2011-04-14 |
JP5491868B2 true JP5491868B2 (ja) | 2014-05-14 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2009543770A Active JP5491868B2 (ja) | 2007-11-26 | 2008-11-20 | 電子回路 |
Country Status (4)
Country | Link |
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US (1) | US9053950B2 (ja) |
JP (1) | JP5491868B2 (ja) |
KR (1) | KR101495823B1 (ja) |
WO (1) | WO2009069532A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5671200B2 (ja) * | 2008-06-03 | 2015-02-18 | 学校法人慶應義塾 | 電子回路 |
JP4977101B2 (ja) * | 2008-08-26 | 2012-07-18 | 株式会社東芝 | 積層型半導体装置 |
JP5283075B2 (ja) | 2008-12-26 | 2013-09-04 | 学校法人慶應義塾 | 電子回路 |
JP5374246B2 (ja) * | 2009-06-12 | 2013-12-25 | 学校法人慶應義塾 | 密封型半導体記録媒体及び密封型半導体記録装置 |
US9305606B2 (en) * | 2009-08-17 | 2016-04-05 | Micron Technology, Inc. | High-speed wireless serial communication link for a stacked device configuration using near field coupling |
JP5426966B2 (ja) * | 2009-08-28 | 2014-02-26 | 学校法人慶應義塾 | 半導体集積回路装置 |
JP5663970B2 (ja) * | 2010-06-07 | 2015-02-04 | ソニー株式会社 | 信号伝送システム、通信装置、及び、電子機器 |
US8831073B2 (en) | 2009-08-31 | 2014-09-09 | Sony Corporation | Wireless transmission system, wireless communication device, and wireless communication method |
JP5646830B2 (ja) * | 2009-09-02 | 2014-12-24 | ルネサスエレクトロニクス株式会社 | 半導体装置、半導体装置の製造方法、及びリードフレーム |
JP5635759B2 (ja) * | 2009-10-15 | 2014-12-03 | 学校法人慶應義塾 | 積層半導体集積回路装置 |
CN102449762B (zh) * | 2010-06-25 | 2015-06-17 | 新普力科技有限公司 | 存储器装置 |
KR101152823B1 (ko) * | 2010-12-30 | 2012-06-12 | 에스케이하이닉스 주식회사 | 반도체 칩 및 이를 갖는 적층 반도체 패키지 |
JP5616813B2 (ja) * | 2011-02-16 | 2014-10-29 | 学校法人慶應義塾 | 電子回路 |
US9509375B2 (en) | 2013-08-01 | 2016-11-29 | SK Hynix Inc. | Wireless transceiver circuit with reduced area |
JP2015069658A (ja) * | 2013-09-26 | 2015-04-13 | 富士通株式会社 | メモリ |
JP6611703B2 (ja) | 2014-03-12 | 2019-11-27 | 株式会社ThruChip Japan | 積層半導体集積回路装置 |
JP2018107343A (ja) * | 2016-12-27 | 2018-07-05 | キヤノン株式会社 | 放射線撮像装置、その製造方法および撮像システム |
TW201838094A (zh) | 2017-02-16 | 2018-10-16 | 學校法人慶應義塾 | 層疊半導體積體電路裝置 |
GB2565310B (en) * | 2017-08-08 | 2020-05-13 | Advanced Risc Mach Ltd | 3D interconnected die stack |
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JP2002217356A (ja) * | 2001-01-19 | 2002-08-02 | Nec Corp | 半導体装置及びその製造方法 |
JP2005228981A (ja) * | 2004-02-13 | 2005-08-25 | Keio Gijuku | 電子回路 |
JP2006173986A (ja) * | 2004-12-15 | 2006-06-29 | Keio Gijuku | 電子回路 |
Family Cites Families (10)
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US5701037A (en) * | 1994-11-15 | 1997-12-23 | Siemens Aktiengesellschaft | Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit |
WO2004073063A1 (ja) | 2003-02-14 | 2004-08-26 | Renesas Technology Corp. | 電子装置および半導体装置 |
JP4193060B2 (ja) | 2004-06-04 | 2008-12-10 | 学校法人慶應義塾 | 電子回路 |
JP4677598B2 (ja) | 2004-08-05 | 2011-04-27 | 学校法人慶應義塾 | 電子回路 |
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JP4124365B2 (ja) | 2004-08-24 | 2008-07-23 | 学校法人慶應義塾 | 電子回路 |
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JP2006173415A (ja) | 2004-12-16 | 2006-06-29 | Keio Gijuku | 電子回路 |
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JP2009076879A (ja) * | 2007-08-24 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
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JPH1168033A (ja) * | 1997-08-15 | 1999-03-09 | Matsushita Electric Ind Co Ltd | マルチチップモジュール |
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JP2005228981A (ja) * | 2004-02-13 | 2005-08-25 | Keio Gijuku | 電子回路 |
JP2006173986A (ja) * | 2004-12-15 | 2006-06-29 | Keio Gijuku | 電子回路 |
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