JP2005228981A - 電子回路 - Google Patents
電子回路 Download PDFInfo
- Publication number
- JP2005228981A JP2005228981A JP2004037242A JP2004037242A JP2005228981A JP 2005228981 A JP2005228981 A JP 2005228981A JP 2004037242 A JP2004037242 A JP 2004037242A JP 2004037242 A JP2004037242 A JP 2004037242A JP 2005228981 A JP2005228981 A JP 2005228981A
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- Prior art keywords
- transmission
- coil
- reception
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- circuit
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- 230000005540 biological transmission Effects 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims description 24
- 230000000737 periodic effect Effects 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 14
- 230000008054 signal transmission Effects 0.000 abstract description 2
- 239000000872 buffer Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 21
- 101100286980 Daucus carota INV2 gene Proteins 0.000 description 16
- 101100508840 Daucus carota INV3 gene Proteins 0.000 description 16
- 101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 16
- 230000008859 change Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000001939 inductive effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 101150070189 CIN3 gene Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 101150110971 CIN7 gene Proteins 0.000 description 1
- 101150110298 INV1 gene Proteins 0.000 description 1
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/165—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F38/00—Adaptations of transformers or inductances for specific applications or functions
- H01F38/14—Inductive couplings
- H01F2038/143—Inductive couplings for signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/0239—Signal transmission by AC coupling
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Abstract
【解決手段】LSIチップが3層にスタックされ、3チップにまたがるバスを形成する。第1〜第3LSIチップ11a、11b、11c上には、第1〜第3送信コイル13a、13b、13c、及び、第1〜第3受信コイル15a、15b、15cが配線により形成される。これら3ペアの送受信コイル13、15の開口の中心が一致するように配置される。これにより、3ペアの送受信コイル13、15は誘導性結合を形成し、通信が可能となる。第1〜第3送信コイル13a、13b、13cにはそれぞれ第1〜第3送信回路12a、12b、12cが接続され、第1〜第3受信コイル15a、15b、15cにはそれぞれ第1〜第3受信回路14a、14b、14cが接続される。
【選択図】図1
Description
12 送信回路
13 送信コイル
14 受信回路
15 受信コイル
400、401 送受信回路
403 誘導性結合
410、411、412、420、421、422、423 LSIチップ
501 送受信回路
503 誘導性結合
510、511、512 LSIチップ
FF 記憶素子
INV バッファ
NAND ナンド回路
L コイル
T トランジスタ
Rxclk 受信クロック
Rxdata 受信データ
Txclk 送信クロック
Txdata 送信データ
Vbias バイアス電圧
Claims (5)
- 基板上の配線により形成される第1コイルを有する第1基板と、
基板上の配線により前記第1コイルと対応する位置に形成され第1コイルと誘導結合する第2コイルを有する第2基板と
を備えることを特徴とする電子回路。 - 前記第1基板は、送信用のディジタルデータが変化した時に前記第1コイルに信号を出力する送信回路を更に有することを特徴とする請求項1記載の電子回路。
- 前記第2基板は、前記第2コイルの両端を抵抗を介して所定の電圧源に接続する受信回路を更に有することを特徴とする請求項1又は2記載の電子回路。
- 前記第1コイルは、複数の第2基板の第2コイルと誘導結合していることを特徴とする請求項1記載の電子回路。
- 前記第2基板は、周期的な所定の期間だけ信号を受信する受信回路を更に有することを特徴とする請求項1又は2記載の電子回路。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004037242A JP4131544B2 (ja) | 2004-02-13 | 2004-02-13 | 電子回路 |
TW094104197A TW200532894A (en) | 2004-02-13 | 2005-02-14 | Electronic circuit |
US10/588,769 US7768790B2 (en) | 2004-02-13 | 2005-02-14 | Electronic circuit |
KR1020067017417A KR101066128B1 (ko) | 2004-02-13 | 2005-02-14 | 전자회로 |
PCT/JP2005/002117 WO2005078795A1 (ja) | 2004-02-13 | 2005-02-14 | 電子回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004037242A JP4131544B2 (ja) | 2004-02-13 | 2004-02-13 | 電子回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005228981A true JP2005228981A (ja) | 2005-08-25 |
JP4131544B2 JP4131544B2 (ja) | 2008-08-13 |
Family
ID=34857752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004037242A Expired - Lifetime JP4131544B2 (ja) | 2004-02-13 | 2004-02-13 | 電子回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7768790B2 (ja) |
JP (1) | JP4131544B2 (ja) |
KR (1) | KR101066128B1 (ja) |
TW (1) | TW200532894A (ja) |
WO (1) | WO2005078795A1 (ja) |
Cited By (53)
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---|---|---|---|---|
WO2007029435A1 (ja) * | 2005-09-02 | 2007-03-15 | Nec Corporation | 伝送方法、インターフェース回路、半導体装置、半導体パッケージ、半導体モジュールおよびメモリモジュール |
JP2007073812A (ja) * | 2005-09-08 | 2007-03-22 | Mitsubishi Electric Corp | 半導体装置 |
JP2007129412A (ja) * | 2005-11-02 | 2007-05-24 | Sony Corp | 通信用半導体チップ、キャリブレーション方法、並びにプログラム |
WO2007086285A1 (ja) * | 2006-01-30 | 2007-08-02 | Nec Corporation | 信号伝送方式及び半導体集積回路装置 |
JP2007235034A (ja) * | 2006-03-03 | 2007-09-13 | Seiko Epson Corp | 電子基板、半導体装置および電子機器 |
WO2007111036A1 (ja) * | 2006-03-24 | 2007-10-04 | Nec Corporation | 半導体装置 |
JP2007318003A (ja) * | 2006-05-29 | 2007-12-06 | Nec Electronics Corp | 半導体装置 |
WO2007145086A1 (ja) * | 2006-06-12 | 2007-12-21 | Nec Corporation | 半導体装置、信号伝送装置および信号伝送方法 |
WO2008099711A1 (ja) * | 2007-02-13 | 2008-08-21 | Nec Corporation | 半導体装置 |
WO2008102814A1 (ja) * | 2007-02-23 | 2008-08-28 | Nec Corporation | インダクタ結合を用いて信号伝送を行う半導体装置 |
JP2008270787A (ja) * | 2007-03-26 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2009026792A (ja) * | 2007-07-17 | 2009-02-05 | Hitachi Ltd | 半導体装置 |
JP2009032857A (ja) * | 2007-07-26 | 2009-02-12 | Hitachi Ltd | 半導体集積回路および半導体装置 |
WO2009069532A1 (ja) * | 2007-11-26 | 2009-06-04 | Keio University | 電子回路 |
US7546106B2 (en) | 2004-12-15 | 2009-06-09 | Keio University | Electronic circuit |
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Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6000128A (en) * | 1994-06-21 | 1999-12-14 | Sumitomo Special Metals Co., Ltd. | Process of producing a multi-layered printed-coil substrate |
US5701037A (en) | 1994-11-15 | 1997-12-23 | Siemens Aktiengesellschaft | Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit |
JPH1168033A (ja) * | 1997-08-15 | 1999-03-09 | Matsushita Electric Ind Co Ltd | マルチチップモジュール |
JP2000124406A (ja) * | 1998-10-16 | 2000-04-28 | Synthesis Corp | 集積回路用データ通信装置ならびに集積回路チップおよびこの集積回路チップを用いた集積回路 |
US6262600B1 (en) * | 2000-02-14 | 2001-07-17 | Analog Devices, Inc. | Isolator for transmitting logic signals across an isolation barrier |
JP2002252324A (ja) | 2001-02-23 | 2002-09-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2002368118A (ja) | 2001-06-04 | 2002-12-20 | Sony Corp | 半導体装置およびその製造方法 |
US7460604B2 (en) * | 2004-06-03 | 2008-12-02 | Silicon Laboratories Inc. | RF isolator for isolating voltage sensing and gate drivers |
JP3905101B2 (ja) * | 2004-08-20 | 2007-04-18 | 株式会社半導体理工学研究センター | 出力可変型電源回路 |
-
2004
- 2004-02-13 JP JP2004037242A patent/JP4131544B2/ja not_active Expired - Lifetime
-
2005
- 2005-02-14 KR KR1020067017417A patent/KR101066128B1/ko active IP Right Grant
- 2005-02-14 TW TW094104197A patent/TW200532894A/zh unknown
- 2005-02-14 WO PCT/JP2005/002117 patent/WO2005078795A1/ja active Application Filing
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JPWO2007029435A1 (ja) * | 2005-09-02 | 2009-03-12 | 日本電気株式会社 | 伝送方法、インターフェース回路、半導体装置、半導体パッケージ、半導体モジュールおよびメモリモジュール |
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JP2009188468A (ja) * | 2008-02-02 | 2009-08-20 | Keio Gijuku | 集積回路 |
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US8872609B2 (en) | 2009-02-25 | 2014-10-28 | Keio University | Inductor element and integrated circuit device |
KR20110134387A (ko) | 2009-02-25 | 2011-12-14 | 각고호우징 게이오기주크 | 인덕터 소자 및 집적 회로 장치 |
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US8736074B2 (en) | 2009-05-12 | 2014-05-27 | Fuji Xerox Co., Ltd. | Multi chip semiconductor device |
JP2010287113A (ja) * | 2009-06-12 | 2010-12-24 | Keio Gijuku | 密封型半導体記録媒体及び密封型半導体記録装置 |
WO2010143538A1 (ja) * | 2009-06-12 | 2010-12-16 | 学校法人 慶應義塾 | 密封型半導体記録媒体及び密封型半導体記録装置 |
KR20120031164A (ko) | 2009-06-12 | 2012-03-30 | 각고호우징 게이오기주크 | 밀봉형 반도체 기록 매체 및 밀봉형 반도체 기록 장치 |
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US10651965B2 (en) | 2009-08-17 | 2020-05-12 | Micron Technology, Inc. | Wireless serial links for communications between devices formed in a package |
US8744349B2 (en) | 2009-10-15 | 2014-06-03 | Keio University | Multi-stack semiconductor integrated circuit device |
KR20120028096A (ko) * | 2010-09-14 | 2012-03-22 | 삼성전자주식회사 | 커플링 도전 패턴을 포함하는 반도체 장치 |
US9165893B2 (en) | 2010-09-14 | 2015-10-20 | Samsung Electronics Co., Ltd. | Semiconductor device including coupling conductive pattern |
KR101717982B1 (ko) * | 2010-09-14 | 2017-03-21 | 삼성전자 주식회사 | 커플링 도전 패턴을 포함하는 반도체 장치 |
US8952472B2 (en) | 2010-10-13 | 2015-02-10 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device using close proximity wireless communication |
US8466740B2 (en) | 2010-10-29 | 2013-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Receiving circuit, LSI chip, and storage medium |
US8588683B2 (en) | 2010-11-19 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit, semiconductor device, and electronic device |
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JP2015043426A (ja) * | 2013-08-26 | 2015-03-05 | スンシル ユニバーシティー リサーチ コンソルティウム テクノーパークSoongsil University Research Consortium Techno−Park | チップ間の無線電力伝送のためのアンテナ |
JP2014057313A (ja) * | 2013-09-17 | 2014-03-27 | Sony Corp | 伝送装置とその製造方法及び伝送方法 |
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US11437350B2 (en) | 2016-02-10 | 2022-09-06 | Ultramemory Inc. | Semiconductor device |
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Also Published As
Publication number | Publication date |
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WO2005078795A1 (ja) | 2005-08-25 |
US7768790B2 (en) | 2010-08-03 |
TW200532894A (en) | 2005-10-01 |
KR101066128B1 (ko) | 2011-09-20 |
TWI364106B (ja) | 2012-05-11 |
US20070289772A1 (en) | 2007-12-20 |
JP4131544B2 (ja) | 2008-08-13 |
KR20070007089A (ko) | 2007-01-12 |
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