WO2008102814A1 - インダクタ結合を用いて信号伝送を行う半導体装置 - Google Patents

インダクタ結合を用いて信号伝送を行う半導体装置 Download PDF

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Publication number
WO2008102814A1
WO2008102814A1 PCT/JP2008/052877 JP2008052877W WO2008102814A1 WO 2008102814 A1 WO2008102814 A1 WO 2008102814A1 JP 2008052877 W JP2008052877 W JP 2008052877W WO 2008102814 A1 WO2008102814 A1 WO 2008102814A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
signal transmission
transmitting
device performing
performing signal
Prior art date
Application number
PCT/JP2008/052877
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Nakagawa
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009500216A priority Critical patent/JP5229213B2/ja
Priority to US12/527,682 priority patent/US8588681B2/en
Publication of WO2008102814A1 publication Critical patent/WO2008102814A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/24—Inductive coupling
    • H04B5/26—Inductive coupling using coils
    • H04B5/263—Multiple coils at either side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Near-Field Transmission Systems (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　インダクタ結合を用いて信号伝送を行う半導体装置が開示される。該半導体装置は、1つの送信コイルと複数の受信コイルとからなる送受信コイル対を1つ以上、または複数の送信コイルと１つの受信コイルとからなる送受信コイル対を1つ以上、または複数の送信コイルと複数の受信コイルとからなる送受信コイル対を1つ以上有する。
PCT/JP2008/052877 2007-02-23 2008-02-20 インダクタ結合を用いて信号伝送を行う半導体装置 WO2008102814A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009500216A JP5229213B2 (ja) 2007-02-23 2008-02-20 インダクタ結合を用いて信号伝送を行う半導体装置
US12/527,682 US8588681B2 (en) 2007-02-23 2008-02-20 Semiconductor device performing signal transmission by using inductor coupling

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007043561 2007-02-23
JP2007-043561 2007-02-23

Publications (1)

Publication Number Publication Date
WO2008102814A1 true WO2008102814A1 (ja) 2008-08-28

Family

ID=39710088

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052877 WO2008102814A1 (ja) 2007-02-23 2008-02-20 インダクタ結合を用いて信号伝送を行う半導体装置

Country Status (3)

Country Link
US (1) US8588681B2 (ja)
JP (1) JP5229213B2 (ja)
WO (1) WO2008102814A1 (ja)

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CN108476071A (zh) * 2015-09-17 2018-08-31 蔚山科学技术院 通信系统

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US6971590B2 (en) * 2003-12-30 2005-12-06 3M Innovative Properties Company Liquid spray gun with manually rotatable frictionally retained air cap
US20110006443A1 (en) * 2008-03-13 2011-01-13 Nec Corporation Semiconductor device
DE102008049673B4 (de) * 2008-09-30 2011-04-28 Infineon Technologies Ag Schaltungsanordnung mit einem Leistungshalbleitermodul und einer außerhalb dessen angeordneten Steuerschaltung
EP3486667B1 (en) * 2010-04-06 2022-11-16 FMC Technologies, Inc. Inductively interrogated passive sensor apparatus
US9397729B2 (en) * 2010-11-15 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Through chip coupling for signal transport
DE102011081268A1 (de) 2011-08-19 2013-02-21 Endress + Hauser Gmbh + Co. Kg Feldgerät zur Bestimmung oder Überwachung einer physikalischen oder chemischen Prozessgröße in der Automatisierungstechnik
EP4096105A1 (en) * 2021-05-25 2022-11-30 Aiut Sp. z o.o. Method for digital wireless communication through a barrier made of conductive material, system for performing such communication, and system for monitoring cylinder content
WO2022249031A1 (en) * 2021-05-25 2022-12-01 Aiut Sp. Z O.O. Method and system for measuring a level of liquid inside a hermetically closed container

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JPH07221260A (ja) * 1994-02-02 1995-08-18 Fujitsu Ltd 集積回路装置とその製造方法
JPH1168033A (ja) * 1997-08-15 1999-03-09 Matsushita Electric Ind Co Ltd マルチチップモジュール
JP2005203657A (ja) * 2004-01-19 2005-07-28 Atsushi Iwata 半導体装置
JP2005228981A (ja) * 2004-02-13 2005-08-25 Keio Gijuku 電子回路

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US5701037A (en) 1994-11-15 1997-12-23 Siemens Aktiengesellschaft Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit
JP2000036019A (ja) * 1998-07-17 2000-02-02 Nippon Steel Corp リーダライタ用アンテナ装置
EP1145430B1 (en) * 1998-11-12 2004-09-15 Broadcom Corporation Integrated tuner architecture
EP1136960A1 (de) * 2000-03-24 2001-09-26 Infineon Technologies AG Individualanordnung
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JP2002246250A (ja) 2001-02-14 2002-08-30 Matsushita Electric Ind Co Ltd 電磁結合コイル
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108476071A (zh) * 2015-09-17 2018-08-31 蔚山科学技术院 通信系统
JP2018532321A (ja) * 2015-09-17 2018-11-01 ユニスト（ウルサン ナショナル インスティテュート オブ サイエンス アンド テクノロジー） 通信システム
US10484049B2 (en) 2015-09-17 2019-11-19 Unist (Ulsan National Institute Of Science And Technology) Communication system
CN108476071B (zh) * 2015-09-17 2022-01-11 蔚山科学技术院 通信系统

Also Published As

Publication number Publication date
JP5229213B2 (ja) 2013-07-03
US8588681B2 (en) 2013-11-19
JPWO2008102814A1 (ja) 2010-05-27
US20100069000A1 (en) 2010-03-18

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