JP2010287113A - 密封型半導体記録媒体及び密封型半導体記録装置 - Google Patents
密封型半導体記録媒体及び密封型半導体記録装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000004891 communication Methods 0.000 claims abstract description 138
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000009499 grossing Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 5
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- 230000001939 inductive effect Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
- H04B5/79—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/40—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by components specially adapted for near-field transmission
- H04B5/48—Transceivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
- H04B5/72—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for local intradevice communication
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/00032—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries characterised by data exchange
- H02J7/00034—Charger exchanging data with an electronic device, i.e. telephone, whose internal battery is under charge
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
- H04B5/24—Inductive coupling
- H04B5/26—Inductive coupling using coils
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- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
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- Near-Field Transmission Systems (AREA)
- Semiconductor Integrated Circuits (AREA)
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Abstract
【解決手段】 少なくとも1枚の半導体基板に最大辺が20mm以下のサイズの複数の読出専用メモリブロックを互いに電源配線を共有しない状態で設け、前記各読出専用メモリブロックに電力受給用コイルとデータ通信用コイルを備えるとともに、前記各読出専用メモリブロックに互いに異なったデータを書き込む。
【選択図】 図1
Description
PRX/PTX≒k2 =0.42 =0.16
になる。したがって、通信距離が1mmのときに、直径が6mmよりも小さなコイルを用いると、kの値が著しく小さくなり、受信電力が著しく小さくなって、ストーンの回路に十分な電力を供給できなくなる。
VDD 2 /R=1.82 /5≒650mW
になる。
第1手順(I):まず、リーダーブロック31からROMブロック20に磁界結合を用いて電力を無線送電する。給電された電力はチップ上に形成されたキャパシタ25に蓄えられる。ROMブロック20の電源の電位VDDが所定の電位まで上昇したことを電力センサ26を用いて検出し、パワー・オン・リセット回路27を用いてシステムをリセットする。
VR/VDD=1/(fCR)
で求められる。
VR/VDD=1/(fCR)=1/(250MHz×1nF×25Ω)≒0.16
であり、16%になる。つまり、マスクROMの回路ではリップルが大きくなるので、この問題を解決するために、本発明では、電力送信を複数のチャネルに分け、各チャネルの電磁波の位相をずらすことでリップルを低減する。
11,41 ウェーハ
12 保護膜
20,50,70 ROMブロック
21,51,511〜514,711〜714 電力受給用コイル
22,52,521〜524,721〜724 データ通信用コイル
221 受信用コイル
222 送信用コイル
23,531〜534 電力整流器
241 受信用増幅器
242 送信用増幅器
25 キャパシタ
26 電力センサ
27 パワー・オン・リセット回路
281,282 レジスタ
29 マスクROM
30,60 リーダー
31,61,81 リーダーブロック
32,62,621〜624,821〜824 電力供給用コイル
33,63,631〜634,831〜834 データ通信用コイル
331 送信用コイル
332 受信用コイル
34 電力用増幅器
351 送信用増幅器
352 受信用増幅器
42 SiN保護膜
43 SiN保護膜
44 SiO2膜
Claims (9)
- 少なくとも1枚の半導体基板に最大辺が20mm以下のサイズの複数の読出専用メモリブロックを互いに電源配線を共有しない状態で設け、
前記各読出専用メモリブロックは電力受給用コイルとデータ通信用コイルを備えるとともに、
前記各読出専用メモリブロックに書き込まれたデータが互いに異なっている密封型半導体記録媒体。 - 前記各読出専用メモリブロックは、電力の受給とデータ通信とを時間分割して行う時分割手段を備えている請求項1に記載の密封型半導体記録媒体。
- 前記各読出専用メモリブロックは、前記電力受給用コイルで受給した交流電力を平滑化する平滑化手段を備えている請求項1または請求項2に記載の密封型半導体記録媒体。
- 前記平滑化手段が、前記電力受給用コイルで受給した交流電力の位相を互いにずらして平滑化する機構を備えている請求項3に記載の密封型半導体記録媒体。
- 前記読出専用メモリブロックが、前記電力受給用コイルに供給された電力が予め設定した値より過剰になったことを前記データ通信用コイルに伝達するフィードバック制御機構を備えている請求項1乃至請求項4のいずれか1項に記載の密封型半導体記録媒体。
- 前記半導体基板が、シリコン窒化膜で密封されている請求項1乃至請求項5のいずれか1項に記載の密封型半導体記録媒体。
- 前記各読出専用メモリブロックが同じ配列で配置されるとともに、前記各読出専用メモリブロックに書き込まれたデータが互いに異なる半導体基板を、各各読出専用メモリブロックは投影的に重なるように複数枚積層した請求項1乃至請求項6のいずれか1項に記載の密封型半導体記録媒体。
- 請求項1乃至請求項7のいずれか1項に記載の密封型半導体記録媒体と、
前記密封型半導体記録媒体に電力を供給する電力供給用コイルとデータ通信用コイルとを備えたリーダーブロックを複数設けた半導体基板からなるリーダーとを有し、
前記各リーダーブロックに設けた電力供給用コイルとデータ通信用コイルと前記各読出専用メモリブロックに設けた電力受給用コイルとデータ通信用コイルとがそれぞれ互いに投影的に重なるように対向させた密封型半導体記録装置。 - 前記各リーダーブロックに設けた電力供給用コイルとデータ通信用コイルと前記各読出専用メモリブロックに設けた電力受給用コイルとデータ通信用コイルとの対向間隔が3mm以下である請求項8に記載の密封型半導体記録装置。
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JP2009141403A JP5374246B2 (ja) | 2009-06-12 | 2009-06-12 | 密封型半導体記録媒体及び密封型半導体記録装置 |
US13/377,677 US8827166B2 (en) | 2009-06-12 | 2010-05-27 | Sealed semiconductor recording medium and sealed semiconductor memory |
KR1020117028109A KR101628759B1 (ko) | 2009-06-12 | 2010-05-27 | 밀봉형 반도체 기록 매체 및 밀봉형 반도체 기록 장치 |
PCT/JP2010/058970 WO2010143538A1 (ja) | 2009-06-12 | 2010-05-27 | 密封型半導体記録媒体及び密封型半導体記録装置 |
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JP5374246B2 JP5374246B2 (ja) | 2013-12-25 |
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WO (1) | WO2010143538A1 (ja) |
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JP2012209769A (ja) * | 2011-03-30 | 2012-10-25 | Keio Gijuku | 積層集積回路装置 |
JP2015500622A (ja) * | 2012-01-09 | 2015-01-05 | ケイドゥパウォ インコーポレイテッドKthepower Inc. | 無線充電システム用受信機 |
US11223352B2 (en) | 2007-04-18 | 2022-01-11 | Monterey Research, Llc | Load driver |
US11422712B2 (en) | 2019-11-15 | 2022-08-23 | Kioxia Corporation | Storage device and storage system including a memory to store a check code for an integrity check |
US11923325B2 (en) | 2019-11-15 | 2024-03-05 | Kioxia Corporation | Storage system, memory chip unit, and wafer |
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EP2617207A2 (en) * | 2010-09-17 | 2013-07-24 | Cascade Microtech, Inc. | Systems and methods for non-contact power and data transfer in electronic devices |
JP5896354B2 (ja) * | 2012-04-03 | 2016-03-30 | 株式会社アイエスディ | 密封型半導体記憶装置記憶システム |
US9509375B2 (en) | 2013-08-01 | 2016-11-29 | SK Hynix Inc. | Wireless transceiver circuit with reduced area |
US10440588B2 (en) * | 2015-04-24 | 2019-10-08 | Hewlett-Packard Development Company, L.P. | Routing signals based on an orientation of devices with respect to each other |
US10571487B2 (en) | 2016-11-30 | 2020-02-25 | Formfactor Beaverton, Inc. | Contact engines, probe head assemblies, probe systems, and associated methods for on-wafer testing of the wireless operation of a device under test |
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JP2012209769A (ja) * | 2011-03-30 | 2012-10-25 | Keio Gijuku | 積層集積回路装置 |
US9653942B2 (en) | 2012-01-09 | 2017-05-16 | Kthepower Inc. | Receiver for wireless charging system |
US9413191B2 (en) | 2012-01-09 | 2016-08-09 | Kthepower Inc. | Receiver for wireless charging system |
US10050478B2 (en) | 2012-01-09 | 2018-08-14 | Kthepower Inc. | Receiver for wireless charging system for portable electronic device |
US10284023B2 (en) | 2012-01-09 | 2019-05-07 | Kthepower Inc. | Receiver for wireless charging system for portable electronic device |
US10491049B2 (en) | 2012-01-09 | 2019-11-26 | Kthepower Inc. | Receiver for wireless charging system |
US10944298B2 (en) | 2012-01-09 | 2021-03-09 | Samsung Electronics Co., Ltd. | Receiver for wireless charging system |
US11018531B2 (en) | 2012-01-09 | 2021-05-25 | Samsung Electronics Co., Ltd. | Receiver for wireless charging system |
JP2015500622A (ja) * | 2012-01-09 | 2015-01-05 | ケイドゥパウォ インコーポレイテッドKthepower Inc. | 無線充電システム用受信機 |
US11705746B2 (en) | 2012-01-09 | 2023-07-18 | Samsung Electronics Co., Ltd. | Receiver for wireless charging system of a portable communication device |
US11422712B2 (en) | 2019-11-15 | 2022-08-23 | Kioxia Corporation | Storage device and storage system including a memory to store a check code for an integrity check |
US11923325B2 (en) | 2019-11-15 | 2024-03-05 | Kioxia Corporation | Storage system, memory chip unit, and wafer |
Also Published As
Publication number | Publication date |
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WO2010143538A1 (ja) | 2010-12-16 |
US20120091211A1 (en) | 2012-04-19 |
US8827166B2 (en) | 2014-09-09 |
KR101628759B1 (ko) | 2016-06-09 |
KR20120031164A (ko) | 2012-03-30 |
JP5374246B2 (ja) | 2013-12-25 |
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