JP4124365B2 - 電子回路 - Google Patents
電子回路 Download PDFInfo
- Publication number
- JP4124365B2 JP4124365B2 JP2004244060A JP2004244060A JP4124365B2 JP 4124365 B2 JP4124365 B2 JP 4124365B2 JP 2004244060 A JP2004244060 A JP 2004244060A JP 2004244060 A JP2004244060 A JP 2004244060A JP 4124365 B2 JP4124365 B2 JP 4124365B2
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- JP
- Japan
- Prior art keywords
- coil
- electronic circuit
- transmission
- substrate
- communication
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
Description
12 受信コイル
21 フリップフロップ回路
22 送信回路
23 送信コイル
24 コンデンサ
25 受信コイル
26 受信回路
31 LSIチップ
32 送信回路
33 送信コイル
34 受信回路
35 受信コイル
Rxdata 受信データ
Txdata 送信データ
Claims (3)
- 基板上の配線により形成される複数の送信コイルを有する第1基板と、
基板上の配線によりそれぞれ前記第1コイルと対応する位置に形成され第1コイルと誘導結合して通信チャネルを構成する複数の受信コイルを有する第2基板と
を備え、各通信チャネルの送信コイル及び受信コイルは、距離に依存する近接通信チャネルからの正負のクロストークが相殺される位置に配設されていることを特徴とする電子回路。 - 3以上の基板を備え、その内で前記第1基板及び第2基板間の距離が最も長いことを特徴とする請求項1記載の電子回路。
- 最も近い通信チャネル同士は異なる位相で動作し、その次に近い通信チャネル同士は同相で動作して前記クロストークが相殺される位置に配設されていることを特徴とする請求項1又は2記載の電子回路。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004244060A JP4124365B2 (ja) | 2004-08-24 | 2004-08-24 | 電子回路 |
KR1020077005809A KR101051985B1 (ko) | 2004-08-24 | 2005-08-17 | 전자 회로 |
US11/660,450 US7813259B2 (en) | 2004-08-24 | 2005-08-17 | Electronic circuit |
PCT/JP2005/014990 WO2006022172A1 (ja) | 2004-08-24 | 2005-08-17 | 電子回路 |
TW094128992A TWI381517B (zh) | 2004-08-24 | 2005-08-24 | electronic circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004244060A JP4124365B2 (ja) | 2004-08-24 | 2004-08-24 | 電子回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006066454A JP2006066454A (ja) | 2006-03-09 |
JP4124365B2 true JP4124365B2 (ja) | 2008-07-23 |
Family
ID=35967386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004244060A Active JP4124365B2 (ja) | 2004-08-24 | 2004-08-24 | 電子回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7813259B2 (ja) |
JP (1) | JP4124365B2 (ja) |
KR (1) | KR101051985B1 (ja) |
TW (1) | TWI381517B (ja) |
WO (1) | WO2006022172A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006173986A (ja) * | 2004-12-15 | 2006-06-29 | Keio Gijuku | 電子回路 |
JP5149554B2 (ja) * | 2007-07-17 | 2013-02-20 | 株式会社日立製作所 | 半導体装置 |
JP2009032857A (ja) | 2007-07-26 | 2009-02-12 | Hitachi Ltd | 半導体集積回路および半導体装置 |
US9053950B2 (en) | 2007-11-26 | 2015-06-09 | Keio University | Electronic circuit |
JP5600237B2 (ja) * | 2008-02-02 | 2014-10-01 | 学校法人慶應義塾 | 集積回路 |
US8415777B2 (en) * | 2008-02-29 | 2013-04-09 | Broadcom Corporation | Integrated circuit with millimeter wave and inductive coupling and methods for use therewith |
JP5475962B2 (ja) | 2008-04-28 | 2014-04-16 | 学校法人慶應義塾 | 電子回路 |
JP5671200B2 (ja) * | 2008-06-03 | 2015-02-18 | 学校法人慶應義塾 | 電子回路 |
JP4982778B2 (ja) | 2008-07-04 | 2012-07-25 | 学校法人慶應義塾 | 電子回路装置 |
JP5325495B2 (ja) | 2008-08-12 | 2013-10-23 | 学校法人慶應義塾 | 半導体装置及びその製造方法 |
JP5536656B2 (ja) * | 2008-09-18 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5433199B2 (ja) | 2008-10-21 | 2014-03-05 | 学校法人慶應義塾 | 電子回路 |
JP5326088B2 (ja) | 2008-10-21 | 2013-10-30 | 学校法人慶應義塾 | 電子回路と通信機能検査方法 |
JP5283075B2 (ja) | 2008-12-26 | 2013-09-04 | 学校法人慶應義塾 | 電子回路 |
JP5395458B2 (ja) | 2009-02-25 | 2014-01-22 | 学校法人慶應義塾 | インダクタ素子及び集積回路装置 |
RU2598248C2 (ru) * | 2009-04-02 | 2016-09-20 | Роше Гликарт Аг | Полиспецифичные антитела, включающие антитела полной длины и одноцепочечные фрагменты fab |
JP5374246B2 (ja) | 2009-06-12 | 2013-12-25 | 学校法人慶應義塾 | 密封型半導体記録媒体及び密封型半導体記録装置 |
TWI484763B (zh) * | 2009-09-01 | 2015-05-11 | Univ Nat Taiwan | 多晶片堆疊裝置及其訊號傳輸方法 |
JP5635759B2 (ja) | 2009-10-15 | 2014-12-03 | 学校法人慶應義塾 | 積層半導体集積回路装置 |
JP5499716B2 (ja) * | 2010-01-06 | 2014-05-21 | 日本電気株式会社 | 半導体装置 |
JP2011233842A (ja) | 2010-04-30 | 2011-11-17 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP5791326B2 (ja) * | 2011-03-30 | 2015-10-07 | 学校法人慶應義塾 | 積層集積回路装置 |
US9431168B2 (en) * | 2012-06-13 | 2016-08-30 | Advanced Micro Devices, Inc. | Contactless interconnect |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01187666A (ja) | 1988-01-22 | 1989-07-27 | Agency Of Ind Science & Technol | 超電導並列処理プロセッサ |
US5701037A (en) * | 1994-11-15 | 1997-12-23 | Siemens Aktiengesellschaft | Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit |
US6486405B2 (en) * | 2000-12-01 | 2002-11-26 | Hon Hai Precision Ind. Co., Ltd. | Arrangement of differential pair for eliminating crosstalk in high speed application |
TWI306009B (en) * | 2003-11-11 | 2009-02-01 | Hon Hai Prec Ind Co Ltd | Arrangement of differential pairs for eliminating crosstalk in high speed digital circuit |
JP4131544B2 (ja) | 2004-02-13 | 2008-08-13 | 学校法人慶應義塾 | 電子回路 |
-
2004
- 2004-08-24 JP JP2004244060A patent/JP4124365B2/ja active Active
-
2005
- 2005-08-17 US US11/660,450 patent/US7813259B2/en active Active
- 2005-08-17 WO PCT/JP2005/014990 patent/WO2006022172A1/ja active Application Filing
- 2005-08-17 KR KR1020077005809A patent/KR101051985B1/ko active IP Right Grant
- 2005-08-24 TW TW094128992A patent/TWI381517B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2006066454A (ja) | 2006-03-09 |
TWI381517B (zh) | 2013-01-01 |
US7813259B2 (en) | 2010-10-12 |
US20070274198A1 (en) | 2007-11-29 |
TW200627624A (en) | 2006-08-01 |
KR20070056093A (ko) | 2007-05-31 |
KR101051985B1 (ko) | 2011-07-26 |
WO2006022172A1 (ja) | 2006-03-02 |
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