JP6138032B2 - 集積回路及びそれを備える積層回路 - Google Patents
集積回路及びそれを備える積層回路 Download PDFInfo
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- JP6138032B2 JP6138032B2 JP2013241386A JP2013241386A JP6138032B2 JP 6138032 B2 JP6138032 B2 JP 6138032B2 JP 2013241386 A JP2013241386 A JP 2013241386A JP 2013241386 A JP2013241386 A JP 2013241386A JP 6138032 B2 JP6138032 B2 JP 6138032B2
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- 238000004891 communication Methods 0.000 claims description 40
- 238000001514 detection method Methods 0.000 claims description 12
- 230000001939 inductive effect Effects 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 33
- 230000005540 biological transmission Effects 0.000 description 17
- 230000015654 memory Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 3
- 125000002842 L-seryl group Chemical group O=C([*])[C@](N([H])[H])([H])C([H])([H])O[H] 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
- H04B5/24—Inductive coupling
- H04B5/26—Inductive coupling using coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
- H04B5/72—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for local intradevice communication
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Geometry (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
- Near-Field Transmission Systems (AREA)
Description
互いに直交するように互いに異なる層に形成された第1配線と第2配線とが交互に接続された、方形状のコイルを複数備え、
前記コイルは、前記コイルの対角を結ぶ対角方向で互いに部分的に重複し、
前記コイルのうちの一つである自コイルを通信に使用し、且つ、前記自コイルの対角を結ぶ対角方向で前記自コイルに重複しない位置に配置された他コイルを通信に使用する第1モードと、
前記自コイルを通信に使用せず、且つ、前記自コイルの辺に対向する対向辺を有する他コイルを通信に使用する第3モードとが、位相タイミングに応じて切り替わり、
前記自コイルから得られる受信信号を受信する受信器の前記第3モードでの受信感度が、前記第1モードでの受信感度よりも下がる、集積回路が提供される。
11,12,13,14,15 第1配線
21,22,23,24 第2配線
31,32,33,34,35,36,37 ビア
40 仮想線
41 第1配線層
42 第2配線層
51,52 コイル端
60 基板
71 周辺領域
81 制御チップ
82,83 チップ
98 閾値コントローラ
101 半導体集積回路
121,124 NOR回路
122 AND回路
123 遅延回路
201 積層回路
Claims (9)
- 互いに直交するように互いに異なる層に形成された第1配線と第2配線とが交互に接続された、方形状のコイルを複数備え、
前記コイルは、前記コイルの対角を結ぶ対角方向で互いに部分的に重複し、
前記コイルのうちの一つである自コイルを通信に使用し、且つ、前記自コイルの対角を結ぶ対角方向で前記自コイルに重複しない位置に配置された他コイルを通信に使用する第1モードと、
前記自コイルを通信に使用せず、且つ、前記自コイルの辺に対向する対向辺を有する他コイルを通信に使用する第3モードとが、位相タイミングに応じて切り替わり、
前記自コイルから得られる受信信号を受信する受信器の前記第3モードでの受信感度が、前記第1モードでの受信感度よりも下がる、集積回路。 - 前記コイルの構造は、互いに同一である、請求項1に記載の集積回路。
- 前記コイルのうちの一つである自コイルは、前記自コイルの対角を結ぶ2つの対角方向で、前記コイルのうちの他コイルと部分的に重複する、請求項1又は2に記載の集積回路。
- 前記第1モードと、
前記自コイルを通信に使用せず、且つ、前記自コイルの対角を結ぶ対角方向で前記自コイルと部分的に重複する位置に配置された他コイルを通信に使用する第2モードと、
前記第3モードとが、位相タイミングに応じて切り替わる、請求項1から3のいずれか一項に記載の集積回路。 - 前記第1モードと、
前記第2モードと、
前記第3モードと、
前記自コイルを通信に使用せず、且つ、前記自コイルの他方の対角を結ぶ対角方向で前記自コイルと部分的に重複する位置に配置された他コイルを通信に使用する第4モードとが、位相タイミングに応じて切り替わる、請求項4に記載の集積回路。 - 前記第1モード、前記第2モード、前記第3モード、前記第4モードが、この順番で繰り返される、請求項5に記載の集積回路。
- 前記コイルの通信への使用が終了及び開始するタイミングに応じて、通信への使用が終了及び開始する該コイルから得られる受信信号の検出閾値を制御する閾値制御回路を備える、請求項1から6のいずれか一項に記載の集積回路。
- 前記受信器は、クロスカップルされたNMOSトランジスタとPMOSトランジスタによるヒステリシスを持ったコンパレータであり、
前記閾値制御回路は、前記受信器の出力データを保持し、
保持された前記出力データが、前記PMOSトランジスタのゲート電位を決定する、請求項7に記載の集積回路。 - 請求項1から8のいずれか一項に記載の集積回路が複数積層され、
前記集積回路の一方が有する前記コイルと、前記集積回路の他方が有する前記コイルとの間の誘導結合によって、前記集積回路の一方と前記集積回路の他方との間の通信が行われる、積層回路。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013241386A JP6138032B2 (ja) | 2013-11-21 | 2013-11-21 | 集積回路及びそれを備える積層回路 |
KR1020167002407A KR102317164B1 (ko) | 2013-11-21 | 2014-11-11 | 집적 회로 및 이를 구비한 적층 회로 |
PCT/JP2014/079830 WO2015076153A1 (ja) | 2013-11-21 | 2014-11-11 | 集積回路及びそれを備える積層回路 |
US14/905,406 US9749020B2 (en) | 2013-11-21 | 2014-11-11 | Integrated circuit and layered circuit provided therewith |
Applications Claiming Priority (1)
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---|---|---|---|
JP2013241386A JP6138032B2 (ja) | 2013-11-21 | 2013-11-21 | 集積回路及びそれを備える積層回路 |
Publications (2)
Publication Number | Publication Date |
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JP2015103584A JP2015103584A (ja) | 2015-06-04 |
JP6138032B2 true JP6138032B2 (ja) | 2017-05-31 |
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JP2013241386A Active JP6138032B2 (ja) | 2013-11-21 | 2013-11-21 | 集積回路及びそれを備える積層回路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9749020B2 (ja) |
JP (1) | JP6138032B2 (ja) |
KR (1) | KR102317164B1 (ja) |
WO (1) | WO2015076153A1 (ja) |
Families Citing this family (9)
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KR20160037652A (ko) * | 2014-09-29 | 2016-04-06 | 엘지이노텍 주식회사 | 무선 전력 송신 장치 및 무선 전력 수신 장치 |
US10062494B2 (en) | 2014-11-03 | 2018-08-28 | Qorvo Us, Inc. | Apparatus with 3D inductors |
US11073958B2 (en) * | 2016-01-29 | 2021-07-27 | Sharp Kabushiki Kaisha | Antenna device |
JP6683366B2 (ja) * | 2016-02-03 | 2020-04-22 | 学校法人慶應義塾 | 半導体集積回路装置 |
US10043745B2 (en) * | 2016-04-01 | 2018-08-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package devices integrated with inductor |
US10027381B2 (en) * | 2016-07-27 | 2018-07-17 | Micron Technology, Inc. | Method and apparatus for inductive coupling signal transmission |
US10742026B2 (en) * | 2018-02-07 | 2020-08-11 | International Business Machines Corporation | Electrostatic protection device |
JP7320861B2 (ja) * | 2019-04-15 | 2023-08-04 | 慶應義塾 | 通信回路、及び通信方法 |
EP4287458A1 (en) | 2021-05-21 | 2023-12-06 | Samsung Electronics Co., Ltd. | Coil for detecting foreign material, and wireless power transmitter comprising same |
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US5394087A (en) * | 1993-08-11 | 1995-02-28 | Picker International, Inc. | Multiple quadrature surface coil system for simultaneous imaging in magnetic resonance systems |
US6771919B2 (en) * | 2001-07-18 | 2004-08-03 | Ricoh Company, Ltd. | Image forming apparatus with reduced variation of rotation speed of image carrier |
JP2004229406A (ja) * | 2003-01-23 | 2004-08-12 | Sony Corp | 分離トランス装置 |
JP4131544B2 (ja) | 2004-02-13 | 2008-08-13 | 学校法人慶應義塾 | 電子回路 |
WO2006117834A1 (ja) * | 2005-04-25 | 2006-11-09 | Renesas Technology Corp. | 半導体装置及びicカード |
DE102005051059B4 (de) * | 2005-10-25 | 2016-09-15 | Maxon Motor Ag | Verfahren zur Herstellung eines Elektromotors und Elektromotor mit mehrlagigen rautenartigen Einzelspulen aus Draht |
US8169185B2 (en) * | 2006-01-31 | 2012-05-01 | Mojo Mobility, Inc. | System and method for inductive charging of portable devices |
JP2009081943A (ja) * | 2007-09-26 | 2009-04-16 | Seiko Epson Corp | 送電制御装置、送電装置、送電側装置および無接点電力伝送システム |
JP5252486B2 (ja) * | 2008-05-14 | 2013-07-31 | 学校法人慶應義塾 | インダクタ素子、集積回路装置、及び、三次元実装回路装置 |
JP5247367B2 (ja) * | 2008-11-13 | 2013-07-24 | ルネサスエレクトロニクス株式会社 | Rf電力増幅器 |
JP5606779B2 (ja) | 2010-04-23 | 2014-10-15 | ルネサスエレクトロニクス株式会社 | 電子部品及び信号伝達方法 |
JP5791326B2 (ja) * | 2011-03-30 | 2015-10-07 | 学校法人慶應義塾 | 積層集積回路装置 |
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2013
- 2013-11-21 JP JP2013241386A patent/JP6138032B2/ja active Active
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2014
- 2014-11-11 US US14/905,406 patent/US9749020B2/en active Active
- 2014-11-11 KR KR1020167002407A patent/KR102317164B1/ko active IP Right Grant
- 2014-11-11 WO PCT/JP2014/079830 patent/WO2015076153A1/ja active Application Filing
Also Published As
Publication number | Publication date |
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KR20160088851A (ko) | 2016-07-26 |
WO2015076153A1 (ja) | 2015-05-28 |
KR102317164B1 (ko) | 2021-10-22 |
US9749020B2 (en) | 2017-08-29 |
US20160156390A1 (en) | 2016-06-02 |
JP2015103584A (ja) | 2015-06-04 |
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