JP3940385B2 - 表示デバイスおよびその製法 - Google Patents

表示デバイスおよびその製法 Download PDF

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Publication number
JP3940385B2
JP3940385B2 JP2003274288A JP2003274288A JP3940385B2 JP 3940385 B2 JP3940385 B2 JP 3940385B2 JP 2003274288 A JP2003274288 A JP 2003274288A JP 2003274288 A JP2003274288 A JP 2003274288A JP 3940385 B2 JP3940385 B2 JP 3940385B2
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Japan
Prior art keywords
aluminum alloy
alloy film
atomic
film
pixel electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2003274288A
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English (en)
Japanese (ja)
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JP2004214606A (ja
JP2004214606A5 (enExample
Inventor
裕史 後藤
敏洋 釘宮
淳一 中井
勝文 富久
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Kobe Steel Ltd
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Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP2003274288A priority Critical patent/JP3940385B2/ja
Priority to SG200307423A priority patent/SG118219A1/en
Priority to TW092135857A priority patent/TWI249070B/zh
Priority to US10/737,121 priority patent/US7098539B2/en
Priority to CNB2003101231240A priority patent/CN1315003C/zh
Priority to KR1020030093972A priority patent/KR100600229B1/ko
Publication of JP2004214606A publication Critical patent/JP2004214606A/ja
Priority to US11/106,439 priority patent/US7154180B2/en
Publication of JP2004214606A5 publication Critical patent/JP2004214606A5/ja
Priority to US11/471,595 priority patent/US7553754B2/en
Application granted granted Critical
Publication of JP3940385B2 publication Critical patent/JP3940385B2/ja
Priority to US12/465,836 priority patent/US7928575B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003274288A 2002-12-19 2003-07-14 表示デバイスおよびその製法 Expired - Lifetime JP3940385B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003274288A JP3940385B2 (ja) 2002-12-19 2003-07-14 表示デバイスおよびその製法
SG200307423A SG118219A1 (en) 2002-12-19 2003-12-17 Electronic device method of manufacture of the same and sputtering target
TW092135857A TWI249070B (en) 2002-12-19 2003-12-17 Electronic device, method of manufacture of the same, and sputtering target
US10/737,121 US7098539B2 (en) 2002-12-19 2003-12-17 Electronic device, method of manufacture of the same, and sputtering target
CNB2003101231240A CN1315003C (zh) 2002-12-19 2003-12-19 电子器件及其制造方法、溅射靶
KR1020030093972A KR100600229B1 (ko) 2002-12-19 2003-12-19 전자 디바이스와 그의 제법, 및 스퍼터링 타겟
US11/106,439 US7154180B2 (en) 2002-12-19 2005-04-15 Electronic device, method of manufacture of the same, and sputtering target
US11/471,595 US7553754B2 (en) 2002-12-19 2006-06-21 Electronic device, method of manufacture of the same, and sputtering target
US12/465,836 US7928575B2 (en) 2002-12-19 2009-05-14 Electronic device, method of manufacture of the same, and sputtering target

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002368786 2002-12-19
JP2003274288A JP3940385B2 (ja) 2002-12-19 2003-07-14 表示デバイスおよびその製法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005350595A Division JP4886285B2 (ja) 2002-12-19 2005-12-05 表示デバイス

Publications (3)

Publication Number Publication Date
JP2004214606A JP2004214606A (ja) 2004-07-29
JP2004214606A5 JP2004214606A5 (enExample) 2006-01-19
JP3940385B2 true JP3940385B2 (ja) 2007-07-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003274288A Expired - Lifetime JP3940385B2 (ja) 2002-12-19 2003-07-14 表示デバイスおよびその製法

Country Status (6)

Country Link
US (4) US7098539B2 (enExample)
JP (1) JP3940385B2 (enExample)
KR (1) KR100600229B1 (enExample)
CN (1) CN1315003C (enExample)
SG (1) SG118219A1 (enExample)
TW (1) TWI249070B (enExample)

Families Citing this family (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940385B2 (ja) 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP2005086118A (ja) * 2003-09-11 2005-03-31 Renesas Technology Corp 半導体装置
JP4646912B2 (ja) * 2004-03-25 2011-03-09 三井金属鉱業株式会社 薄膜回路の接合構造
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
KR100590270B1 (ko) * 2004-05-11 2006-06-19 삼성에스디아이 주식회사 유기 전계 발광 표시 장치
JP4541787B2 (ja) * 2004-07-06 2010-09-08 株式会社神戸製鋼所 表示デバイス
JP4974493B2 (ja) * 2004-08-20 2012-07-11 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR101136026B1 (ko) * 2004-09-24 2012-04-18 주식회사 동진쎄미켐 포토레지스트용 박리제 및 상기 박리제를 이용한 박막트랜지스터 표시판의 제조 방법
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KR101335794B1 (ko) * 2005-01-12 2013-12-02 이데미쓰 고산 가부시키가이샤 ＴＦＴ 기판 및 그의 제조 방법, 및 Ａｌ배선을 구비한투명 도전막 적층 기판 및 그의 제조 방법, 및 Ａｌ배선을구비한 투명 도전막 적층 회로 기판 및 그의 제조 방법, 및산화물 투명 도전막 재료
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JP4579709B2 (ja) * 2005-02-15 2010-11-10 株式会社神戸製鋼所 Ａｌ−Ｎｉ−希土類元素合金スパッタリングターゲット
JP2008124499A (ja) * 2005-02-17 2008-05-29 Kobe Steel Ltd 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP4117001B2 (ja) 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
CN100511687C (zh) * 2005-02-17 2009-07-08 株式会社神户制钢所 显示器和用于制备该显示器的溅射靶
JP2006236839A (ja) * 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
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JP3979605B2 (ja) * 2005-04-26 2007-09-19 三井金属鉱業株式会社 Ａｌ−Ｎｉ−Ｂ合金配線材料及びそれを用いた素子構造
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JP2007186779A (ja) * 2005-04-26 2007-07-26 Mitsui Mining & Smelting Co Ltd Ａｌ−Ｎｉ−Ｂ合金配線材料及びそれを用いた素子構造
WO2006117884A1 (ja) * 2005-04-26 2006-11-09 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
JP2008010801A (ja) * 2005-08-17 2008-01-17 Kobe Steel Ltd ソース−ドレイン電極、薄膜トランジスタ基板およびその製造方法、並びに表示デバイス
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
JP2007081385A (ja) * 2005-08-17 2007-03-29 Kobe Steel Ltd ソース−ドレイン電極、トランジスタ基板およびその製造方法、並びに表示デバイス
JP2009016862A (ja) * 2005-08-17 2009-01-22 Kobe Steel Ltd ソース−ドレイン電極、薄膜トランジスタ基板およびその製造方法、並びに表示デバイス
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JP2007073848A (ja) * 2005-09-08 2007-03-22 Mitsui Mining & Smelting Co Ltd 表示デバイスの製造方法
JP2007109916A (ja) * 2005-10-14 2007-04-26 Mitsui Mining & Smelting Co Ltd 素子の製造方法
JP2007123672A (ja) * 2005-10-31 2007-05-17 Mitsubishi Electric Corp 導電体構造、導電体構造の製造方法、素子基板および素子基板の製造方法
JP4117002B2 (ja) 2005-12-02 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
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JP4728170B2 (ja) 2006-05-26 2011-07-20 三菱電機株式会社 半導体デバイスおよびアクティブマトリクス型表示装置
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JP5214858B2 (ja) * 2006-06-22 2013-06-19 三菱電機株式会社 Ｔｆｔアレイ基板及びその製造方法
JP5000937B2 (ja) 2006-06-30 2012-08-15 三菱電機株式会社 半導体デバイスの製造方法
KR20080086997A (ko) * 2006-08-09 2008-09-29 미쓰이 긴조꾸 고교 가부시키가이샤 소자의 접합 구조
JP2008098611A (ja) * 2006-09-15 2008-04-24 Kobe Steel Ltd 表示装置
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