CN105586576A - 一种镀制pvd防菌膜的方法 - Google Patents

一种镀制pvd防菌膜的方法 Download PDF

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CN105586576A
CN105586576A CN201610078676.1A CN201610078676A CN105586576A CN 105586576 A CN105586576 A CN 105586576A CN 201610078676 A CN201610078676 A CN 201610078676A CN 105586576 A CN105586576 A CN 105586576A
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pvd
bacteria
coated
proof film
arc target
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黎剑文
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DONGGUAN SHATOU CHAORI HARDWARE ELECTRONIC PRODUCTS Co Ltd
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DONGGUAN SHATOU CHAORI HARDWARE ELECTRONIC PRODUCTS Co Ltd
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Priority to US15/411,390 priority patent/US20170226629A1/en
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Abstract

一种镀制PVD防菌膜的方法，采用真空磁控溅射技术，并采用含纳米银的靶材，使纳米银均匀的分布在防菌膜上，能够起到全面防菌的目的，另外将纳米银裹在靶材中镀膜，靶材可以起到保护纳米银的作用，保护了纳米银，增加了防菌膜的耐磨性，可以长时间持续防菌。

Description

一种镀制PVD防菌膜的方法
技术领域
本发明涉及一种镀制PVD膜方法，尤其涉及一种镀制PVD防菌膜方法。
背景技术
PVD(PhysicalVaporDeposition)，指利用物理过程实现物质转移，将原子或分子由源转移到基材表面上的过程。PVD操作时可选取不同的金属蒸发，电离成电子态，利用电偏压将离子引领到工件上，沉积成薄膜。在离子沉积到工件前，也可与其他离子作出反应结合，生成复合式薄膜，在硬度、光亮度、摩擦系数、颜色等方面发生变化，满足在功能或外观上的要求。
现在由于环境污染等原因的影响，人们生活中接触的很多物品往往会带有大量的细菌，成为细菌污染源和疾病传播源。因此发展具有防菌性能的镀层制品，对改善人们生活环境、保护人们健康有十分重要的现实意义。纳米银被证实对生活中常见的数十种致病微生物都有强烈的抑制和杀灭作用，而且不会产生耐药性，因此纳米银现在也被广泛应用到生活中。
现有技术中使用纳米银抗菌时，通常会将纳米银混合在其他材质中，以涂覆的方式保护工件表面，或者直接在工件表面镀覆含有纳米银的薄膜。这些方法或者纳米银分布不均匀，或者是镀层的耐磨性不够好，不能长时间持续性防菌。
发明内容
本发明的目的是针对现有防菌膜纳米银分布不均匀、防菌时间不持久的问题，提供一种镀制PVD防菌膜方法。
一种镀制PVD防菌膜的方法，包括如下步骤：
1）预处理：将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空，升温；
2）生成基础膜层：启动Ti弧靶，充入Ar，加载偏压，在工件表面沉积Ti基础薄膜；
3）生成防菌膜层：关闭Ti弧靶，启动含不超过10%纳米银的Mo弧靶，充入Ar，加载偏压，在工件表面沉积防菌膜层。
在其中一个实施例中，所述方法还包括防菌膜层沉积完成后关闭弧靶及所有电源，真空炉内逐步升压及降温至不超过70℃后，取出工件。
在其中一个实施例中，所述步骤1）中预处理还包括抽真空后通入Ar将工件离子清洗20min。
在其中一个实施例中，所述步骤2）、3）中镀膜方法均采用真空磁控溅射镀膜法。
在其中一个实施例中，步骤1）中所述抽真空压强至4.0×10-3～6.0×10-3Pa。
在其中一个实施例中，步骤1）中所述升温温度至100～150℃。
在其中一个实施例中，步骤2）中所述通入Ar，使炉内压强达到2~5Pa；步骤3）中所述充入Ar，使炉内压强达到0.2~0.5Pa。
在其中一个实施例中，步骤2）中所述加载偏压为-400V~-600V；步骤3）中所述加载偏压为-50V~-100V。
在其中一个实施例中，步骤2）中所述沉积时间为8~15min；步骤3）中所述沉积时间为30~50min。
本发明方法采用真空磁控溅射PVD方法，使纳米银均匀分布，能够起到全面防菌的目的；另外将纳米银裹在靶材中镀膜，靶材可以起到保护纳米银的作用，保护了纳米银，增加了防菌膜的耐磨性，可以长时间防菌。
具体实施方式
为了使本发明的目的、技术方案及优点更加清晰，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以更好地理解本发明的技术方案，并不用于限定本发明。
一种镀制PVD防菌膜的方法，包括如下步骤：1）预处理：将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空，升温；2）生成基础膜层：启动Ti弧靶，充入Ar，加载偏压，在工件表面沉积Ti基础薄膜；3）生成防菌膜层：关闭Ti弧靶，启动含不超过10%纳米银的Mo弧靶，充入Ar，加载偏压，在工件表面沉积防菌膜层。
沉积一层Ti薄膜，能够活化工件表面，提高表面能，能够提高薄膜与工件表面的结合力。在此处也可以使用Cr弧靶，镀一层Cr薄膜。
防菌膜中起防菌作用的是纳米银，用含有纳米银的Mo弧靶镀防菌膜，一方面Mo可以将纳米银保护起来，纳米银不会直接与空气接触，避免被空气中的02氧化失活，另一方面可以增加防菌膜的耐磨性，可以长时间起到防菌的目的。应当理解的是，在其它实施例中，所述弧靶材料还可以采用W、Ti、Zr、Cr等耐磨性能好的金属材料。还应当理解的是，若纳米银在靶材中的含量超过10%，则纳米银难免堆覆于防菌膜表面，影响防菌膜的耐磨性，因此纳米银的在靶材中的含量不超过10%。进一步优选地，纳米银在靶材中的含量为3%~6%。此处还可以使用同样有防菌作用的铜来替代纳米银。
在其中一个实施例中，所述方法还包括薄膜沉积完成后关闭弧靶及所有电源，真空炉内逐步升压及降温至不超过70℃后，取出工件。温度太高出真空炉后薄膜中的物质易与空气中的氧发生氧化反应，影响PVD膜的质量。
在其中一个实施例中，所述步骤1）中预处理还包括抽真空后通入Ar将工件离子清洗20min。离子清洗一方面清洁度高，另一方面，离子清洗过程中激发了工件表面的活化能，能够增加镀膜的结合力。
在其中一个实施例中，所述步骤2）、3）中镀膜方法均采用真空磁控溅射镀膜法。磁控溅射法可用于制备金属、半导体、绝缘体等多材料，且设备简单、镀膜面积大和附着力强的优点。
在其中一个实施例中，步骤1）中所述抽真空压强至4.0×10-3～6.0×10-3Pa。
在其中一个实施例中，步骤1）中所述升温温度至100～150℃。
在其中一个实施例中，步骤2）中所述通入Ar，使炉内压强达到2~5Pa；步骤3）中所述充入Ar，使炉内压强达到0.2~0.5Pa。充入Ar，氩离子会轰击靶材表面，使靶材发生溅射，在溅射粒子中，中性的靶原子或分子沉积在工件上形成薄膜。
在其中一个实施例中，步骤2）中所述加载偏压为-400V~-600V；步骤3）中所述加载偏压为-50V~-100V。
在其中一个实施例中，步骤2）中所述沉积时间为8~15min；步骤3）中所述沉积时间为30~50min。
本发明方法可在铜合金、锌合金、不锈钢等多种材质表面镀制PVD防菌膜。
实施例1
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至4.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至100℃；3）启动Ti弧靶，充入Ar，使炉内压强达到2Pa，加载偏压-400V，在工件表面沉积Ti基础薄膜，沉积时间为8min；4）关闭Ti弧靶，启动含10%纳米银的Mo弧靶，充入Ar，使炉内压强为0.2Pa，加载偏压-50V，在工件表面沉积防菌膜层，沉积时间为50min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至65℃，取出工件。
实施例2
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至6.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至150℃；3）启动Ti弧靶，充入Ar，使炉内压强达到5Pa，加载偏压-600V，在工件表面沉积Ti基础薄膜，沉积时间为15min；4）关闭Ti弧靶，启动含8%纳米银的Mo弧靶，充入Ar，使炉内压强为0.5Pa，加载偏压-100V，在工件表面沉积防菌膜层，沉积时间为30min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至65℃，取出工件。
实施例3
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至5.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至110℃；3）启动Ti弧靶，充入Ar，使炉内压强达到3Pa，加载偏压-400V，在工件表面沉积Ti基础薄膜，沉积时间为10min；4）关闭Ti弧靶，启动含6%纳米银的Mo弧靶，充入Ar，使炉内压强为0.4Pa，加载偏压-80V，在工件表面沉积防菌膜层，沉积时间为35min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至60℃，取出工件。
实施例4
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至4.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至120℃；3）启动Ti弧靶，充入Ar，使炉内压强达到3Pa，加载偏压-450V，在工件表面沉积Ti基础薄膜，沉积时间为12min；4）关闭Ti弧靶，启动含5.5%纳米银的Mo弧靶，充入Ar，使炉内压强为0.3Pa，加载偏压-60V，在工件表面沉积防菌膜层，沉积时间为40min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至65℃，取出工件。
实施例5
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至5.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至130℃；3）启动Ti弧靶，充入Ar，使炉内压强达到4Pa，加载偏压-550V，在工件表面沉积Ti基础薄膜，沉积时间为13min；4）关闭Ti弧靶，启动含5%纳米银的Mo弧靶，充入Ar，使炉内压强为0.5Pa，加载偏压-50V，在工件表面沉积防菌膜层，沉积时间为45min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至65℃，取出工件。
实施例6
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至6.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至150℃；3）启动Ti弧靶，充入Ar，使炉内压强达到2Pa，加载偏压-470V，在工件表面沉积Ti基础薄膜，沉积时间为8min；4）关闭Ti弧靶，启动含4.5%纳米银的Mo弧靶，充入Ar，使炉内压强为0.3Pa，加载偏压-90V，在工件表面沉积防菌膜层，沉积时间为30min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至70℃，取出工件。
实施例7
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至4.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至110℃；3）启动Ti弧靶，充入Ar，使炉内压强达到2Pa，加载偏压-400V，在工件表面沉积Ti基础薄膜，沉积时间为15min；4）关闭Ti弧靶，启动含4%纳米银的Mo弧靶，充入Ar，使炉内压强为0.2Pa，加载偏压-100V，在工件表面沉积防菌膜层，沉积时间为30min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至65℃，取出工件。
实施例8
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至4.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至100℃；3）启动Ti弧靶，充入Ar，使炉内压强达到5Pa，加载偏压-600V，在工件表面沉积Ti基础薄膜，沉积时间为11min；4）关闭Ti弧靶，启动含3%纳米银的Mo弧靶，充入Ar，使炉内压强为0.2Pa，加载偏压-80V，在工件表面沉积防菌膜层，沉积时间为40min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至65℃，取出工件。
实施例9
1）将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空至5.0×10-3Pa，注入Ar进行20min离子清洗；2）将炉内温度升至130℃；3）启动Ti弧靶，充入Ar，使炉内压强达到3Pa，加载偏压-500V，在工件表面沉积Ti基础薄膜，沉积时间为8min；4）关闭Ti弧靶，启动含1%纳米银的Mo弧靶，充入Ar，使炉内压强为0.5Pa，加载偏压-50V，在工件表面沉积防菌膜层，沉积时间为50min；5）关闭弧靶及所有电源，真空炉内逐步升压及降温至70℃，取出工件。
以上所述实施方式仅是本发明的优选实施方式，应当指出的是，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出改进和变形，这些改进和变形也应视为不脱离本发明的保护范围。

Claims (9)

1.一种镀制PVD防菌膜的方法，其特征是：包括如下步骤：
1）预处理：将工件表面洗净，脱去氧化膜，放入真空炉内，抽真空，升温；
2）生成基础膜层：启动Ti弧靶，充入Ar，加载偏压，在工件表面沉积Ti基础薄膜；
3）生成防菌膜层：关闭Ti弧靶，启动含不超过10%纳米银的Mo弧靶，充入Ar，加载偏压，在工件表面沉积防菌膜层。
2.根据权利要求1所述一种镀制PVD防菌膜的方法，其特征是：所述方法还包括防菌膜层沉积完成后关闭弧靶及所有电源，真空炉内逐步升压及降温至不超过70℃后，取出工件。
3.根据权利要求1所述一种镀制PVD防菌膜的方法，其特征是：所述步骤1）中预处理还包括抽真空后通入Ar将工件离子清洗20min。
4.根据权利要求1所述一种镀制PVD防菌膜的方法，其特征是：所述步骤2）、3）中镀膜方法均采用真空磁控溅射镀膜法。
5.根据权利要求1所述一种镀制PVD防菌膜的方法，其特征是：步骤1）中所述抽真空压强至4.0×10-3～6.0×10-3Pa。
6.根据权利要求1所述一种镀制PVD防菌膜的方法，其特征是：步骤1）中所述升温温度至100～150℃。
7.根据权利要求1所述一种镀制PVD防菌膜的方法，其特征是：步骤2）中所述通入Ar，使炉内压强达到2~5Pa；步骤3）中所述充入Ar，使炉内压强达到0.2~0.5Pa。
8.根据权利要求1所述一种镀制PVD防菌膜的方法，其特征是：步骤2）中所述加载偏压为-400V~-600V；步骤3）中所述加载偏压为-50V~-100V。
9.根据权利要求1所述一种镀制PVD防菌膜的方法，其特征是：步骤2）中所述沉积时间为8~15min；步骤3）中所述沉积时间为30~50min。
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