JP2016532739A5 - - Google Patents
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- JP2016532739A5 JP2016532739A5 JP2016522511A JP2016522511A JP2016532739A5 JP 2016532739 A5 JP2016532739 A5 JP 2016532739A5 JP 2016522511 A JP2016522511 A JP 2016522511A JP 2016522511 A JP2016522511 A JP 2016522511A JP 2016532739 A5 JP2016532739 A5 JP 2016532739A5
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- composition
- dicarboxylate
- metal
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000203 mixture Substances 0.000 claims description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims description 30
- 150000004706 metal oxides Chemical class 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 12
- 150000007942 carboxylates Chemical class 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical group CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229920000592 inorganic polymer Polymers 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 238000004132 cross linking Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical group [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- -1 ethylene glycol mono Alkyl ether Chemical class 0.000 claims 8
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N Propionic acid Chemical class CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims 1
- 150000004729 acetoacetic acid derivatives Chemical class 0.000 claims 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 claims 1
- 238000004587 chromatography analysis Methods 0.000 claims 1
- 150000003997 cyclic ketones Chemical class 0.000 claims 1
- 150000004728 pyruvic acid derivatives Chemical class 0.000 claims 1
- 0 CCC(*)(C(*)(*)*C)C(ON(*)CC)=O Chemical compound CCC(*)(C(*)(*)*C)C(ON(*)CC)=O 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/930,711 | 2013-06-28 | ||
| US13/930,711 US9201305B2 (en) | 2013-06-28 | 2013-06-28 | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
| PCT/EP2014/063593 WO2014207142A1 (en) | 2013-06-28 | 2014-06-26 | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016532739A JP2016532739A (ja) | 2016-10-20 |
| JP2016532739A5 true JP2016532739A5 (enExample) | 2017-03-23 |
| JP6342998B2 JP6342998B2 (ja) | 2018-06-13 |
Family
ID=51063419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016522511A Active JP6342998B2 (ja) | 2013-06-28 | 2014-06-26 | 可溶性金属酸化物カルボキシレートのスピンオン組成物及びそれらの使用方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9201305B2 (enExample) |
| EP (1) | EP3014358B1 (enExample) |
| JP (1) | JP6342998B2 (enExample) |
| KR (1) | KR102128141B1 (enExample) |
| CN (1) | CN105209973B (enExample) |
| SG (1) | SG11201507487TA (enExample) |
| TW (1) | TWI606098B (enExample) |
| WO (1) | WO2014207142A1 (enExample) |
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| JP5889568B2 (ja) | 2011-08-11 | 2016-03-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ | 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法 |
| US9315636B2 (en) | 2012-12-07 | 2016-04-19 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds, their compositions and methods |
| US9296922B2 (en) * | 2013-08-30 | 2016-03-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds as hardmasks and filling materials, their compositions and methods of use |
| US9409793B2 (en) | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
| US9418836B2 (en) | 2014-01-14 | 2016-08-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
| US9499698B2 (en) * | 2015-02-11 | 2016-11-22 | Az Electronic Materials (Luxembourg)S.A.R.L. | Metal hardmask composition and processes for forming fine patterns on semiconductor substrates |
| TW201741766A (zh) * | 2015-12-17 | 2017-12-01 | 陶氏全球科技責任有限公司 | 具有高介電常數之光可成像薄膜 |
| US10241409B2 (en) * | 2015-12-22 | 2019-03-26 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Materials containing metal oxides, processes for making same, and processes for using same |
| SG11201810158SA (en) * | 2016-05-19 | 2018-12-28 | Mitsui Chemicals Inc | Composition for forming metal-containing film, method of producing composition for forming metal-containing film, semiconductor device, and method of producing semiconductor device |
| JP7008075B2 (ja) * | 2016-12-21 | 2022-01-25 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 金属酸化物ナノ粒子及び有機ポリマーを含むスピンオン材料の組成物 |
| US20200002568A1 (en) | 2017-03-16 | 2020-01-02 | Merck Patent Gmbh | Lithographic compositions and methods of use thereof |
| TWI755564B (zh) | 2017-09-06 | 2022-02-21 | 德商馬克專利公司 | 含有旋轉塗佈無機氧化物的組合物、製造電子裝置之方法以及在矽基板上塗佈硬遮罩組合物之方法 |
| US11276572B2 (en) * | 2017-12-08 | 2022-03-15 | Tokyo Electron Limited | Technique for multi-patterning substrates |
| US10354922B1 (en) | 2017-12-27 | 2019-07-16 | International Business Machines Corporation | Simplified block patterning with wet strippable hardmask for high-energy implantation |
| KR102626153B1 (ko) | 2019-07-08 | 2024-01-16 | 메르크 파텐트 게엠베하 | 에지 보호층 및 잔류 금속 하드마스크 성분을 제거하기 위한 린스 및 이의 사용 방법 |
| US20210389670A1 (en) * | 2020-06-12 | 2021-12-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist composition and method of manufacturing a semiconductor device |
| CN112462572B (zh) * | 2020-12-09 | 2022-08-16 | 清华大学 | 光刻胶、光刻胶的图案化方法及生成印刷电路板的方法 |
| CN116601108A (zh) * | 2020-12-24 | 2023-08-15 | 东京应化工业株式会社 | 金属氧化物膜形成性组合物、使用其的金属氧化物膜的制造方法、及使金属氧化物膜的体积收缩率降低的方法 |
| EP4334252A2 (en) | 2021-05-06 | 2024-03-13 | Merck Patent GmbH | Spin on metal-organic formulations |
| KR20240037974A (ko) * | 2021-07-28 | 2024-03-22 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물, 반도체 기판의 제조 방법 및 레지스트 하층막의 형성 방법 |
| CN118435121A (zh) * | 2022-01-14 | 2024-08-02 | Jsr株式会社 | 半导体基板的制造方法、抗蚀剂底层膜的形成方法及清洗液 |
| JP7834669B2 (ja) | 2022-03-03 | 2026-03-24 | 信越化学工業株式会社 | 金属酸化膜形成用組成物、パターン形成方法、及び金属酸化膜形成方法 |
| JP7792366B2 (ja) * | 2022-05-10 | 2025-12-25 | 信越化学工業株式会社 | 金属酸化膜形成用組成物、パターン形成方法、及び金属酸化膜形成方法 |
| JP2025113918A (ja) | 2024-01-23 | 2025-08-04 | 信越化学工業株式会社 | 金属含有膜形成用組成物、パターン形成方法 |
| JP2025127213A (ja) | 2024-02-20 | 2025-09-01 | 信越化学工業株式会社 | 洗浄液、基板の洗浄方法、及び金属含有膜の形成方法 |
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-
2013
- 2013-06-28 US US13/930,711 patent/US9201305B2/en active Active
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2014
- 2014-06-26 WO PCT/EP2014/063593 patent/WO2014207142A1/en not_active Ceased
- 2014-06-26 CN CN201480026104.8A patent/CN105209973B/zh active Active
- 2014-06-26 SG SG11201507487TA patent/SG11201507487TA/en unknown
- 2014-06-26 JP JP2016522511A patent/JP6342998B2/ja active Active
- 2014-06-26 EP EP14735520.0A patent/EP3014358B1/en active Active
- 2014-06-26 KR KR1020157035429A patent/KR102128141B1/ko active Active
- 2014-06-27 TW TW103122416A patent/TWI606098B/zh active
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