KR102128141B1 - 가용성 금속 산화물 카르복실레이트의 스핀-온 조성물 및 이의 사용 방법 - Google Patents
가용성 금속 산화물 카르복실레이트의 스핀-온 조성물 및 이의 사용 방법 Download PDFInfo
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- KR102128141B1 KR102128141B1 KR1020157035429A KR20157035429A KR102128141B1 KR 102128141 B1 KR102128141 B1 KR 102128141B1 KR 1020157035429 A KR1020157035429 A KR 1020157035429A KR 20157035429 A KR20157035429 A KR 20157035429A KR 102128141 B1 KR102128141 B1 KR 102128141B1
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- Prior art keywords
- metal oxide
- dicarboxylate
- spin
- composition
- metal
- Prior art date
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Thermal Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/930,711 US9201305B2 (en) | 2013-06-28 | 2013-06-28 | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
| US13/930,711 | 2013-06-28 | ||
| PCT/EP2014/063593 WO2014207142A1 (en) | 2013-06-28 | 2014-06-26 | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160025508A KR20160025508A (ko) | 2016-03-08 |
| KR102128141B1 true KR102128141B1 (ko) | 2020-06-30 |
Family
ID=51063419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157035429A Active KR102128141B1 (ko) | 2013-06-28 | 2014-06-26 | 가용성 금속 산화물 카르복실레이트의 스핀-온 조성물 및 이의 사용 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9201305B2 (enExample) |
| EP (1) | EP3014358B1 (enExample) |
| JP (1) | JP6342998B2 (enExample) |
| KR (1) | KR102128141B1 (enExample) |
| CN (1) | CN105209973B (enExample) |
| SG (1) | SG11201507487TA (enExample) |
| TW (1) | TWI606098B (enExample) |
| WO (1) | WO2014207142A1 (enExample) |
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| JP5889568B2 (ja) | 2011-08-11 | 2016-03-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法 |
| US9315636B2 (en) | 2012-12-07 | 2016-04-19 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds, their compositions and methods |
| US9296922B2 (en) * | 2013-08-30 | 2016-03-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds as hardmasks and filling materials, their compositions and methods of use |
| US9418836B2 (en) | 2014-01-14 | 2016-08-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
| US9409793B2 (en) | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
| US9499698B2 (en) * | 2015-02-11 | 2016-11-22 | Az Electronic Materials (Luxembourg)S.A.R.L. | Metal hardmask composition and processes for forming fine patterns on semiconductor substrates |
| TW201741766A (zh) * | 2015-12-17 | 2017-12-01 | 陶氏全球科技責任有限公司 | 具有高介電常數之光可成像薄膜 |
| US10241409B2 (en) * | 2015-12-22 | 2019-03-26 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Materials containing metal oxides, processes for making same, and processes for using same |
| CN109153884B (zh) * | 2016-05-19 | 2021-03-09 | 三井化学株式会社 | 含金属膜形成用组合物、含金属膜形成用组合物的制造方法、半导体装置以及半导体装置的制造方法 |
| TWI737870B (zh) * | 2016-12-21 | 2021-09-01 | 德商馬克專利公司 | 包含金屬氧化物奈米粒子及有機聚合物之旋轉塗佈材料組合物 |
| JP2020514509A (ja) | 2017-03-16 | 2020-05-21 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | リソグラフィ用組成物及びそれの使用法 |
| CN111051570B (zh) | 2017-09-06 | 2022-05-10 | 默克专利股份有限公司 | 具有改善的热稳定性可用作硬掩膜的含旋涂式无机氧化物的组合物和填充材料 |
| US11276572B2 (en) * | 2017-12-08 | 2022-03-15 | Tokyo Electron Limited | Technique for multi-patterning substrates |
| US10354922B1 (en) | 2017-12-27 | 2019-07-16 | International Business Machines Corporation | Simplified block patterning with wet strippable hardmask for high-energy implantation |
| TW202111105A (zh) | 2019-07-08 | 2021-03-16 | 德商馬克專利公司 | 用於移除邊緣保護層及殘餘金屬硬遮罩組分之清洗劑及其使用方法 |
| US20210389670A1 (en) * | 2020-06-12 | 2021-12-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist composition and method of manufacturing a semiconductor device |
| KR20230124033A (ko) * | 2020-12-24 | 2023-08-24 | 도쿄 오카 고교 가부시키가이샤 | 금속 산화물막 형성성 조성물, 이를 이용한 금속 산화물막의제조 방법, 및 금속 산화물막의 체적 수축율을 저감시키는 방법 |
| KR20240004768A (ko) | 2021-05-06 | 2024-01-11 | 메르크 파텐트 게엠베하 | 스핀 온 금속 유기 제제 |
| CN117642698A (zh) * | 2021-07-28 | 2024-03-01 | Jsr株式会社 | 抗蚀剂底层膜形成用组合物、半导体基板的制造方法及抗蚀剂底层膜的形成方法 |
| KR20240137561A (ko) * | 2022-01-14 | 2024-09-20 | 제이에스알 가부시끼가이샤 | 반도체 기판의 제조 방법, 레지스트 하층막의 형성 방법 및 세정액 |
| JP2023129266A (ja) | 2022-03-03 | 2023-09-14 | 信越化学工業株式会社 | 金属酸化膜形成用組成物、パターン形成方法、及び金属酸化膜形成方法 |
| EP4276535B1 (en) * | 2022-05-10 | 2024-09-18 | Shin-Etsu Chemical Co., Ltd. | Composition for forming metal oxide film, patterning process, and method for forming metal oxide film |
| JP2025113918A (ja) | 2024-01-23 | 2025-08-04 | 信越化学工業株式会社 | 金属含有膜形成用組成物、パターン形成方法 |
| JP2025127213A (ja) | 2024-02-20 | 2025-09-01 | 信越化学工業株式会社 | 洗浄液、基板の洗浄方法、及び金属含有膜の形成方法 |
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| US9201305B2 (en) | 2015-12-01 |
| EP3014358B1 (en) | 2017-08-16 |
| CN105209973A (zh) | 2015-12-30 |
| JP2016532739A (ja) | 2016-10-20 |
| TW201512325A (zh) | 2015-04-01 |
| KR20160025508A (ko) | 2016-03-08 |
| CN105209973B (zh) | 2019-08-13 |
| EP3014358A1 (en) | 2016-05-04 |
| JP6342998B2 (ja) | 2018-06-13 |
| TWI606098B (zh) | 2017-11-21 |
| US20150004801A1 (en) | 2015-01-01 |
| WO2014207142A1 (en) | 2014-12-31 |
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