JP2015159339A - 金属ゲートとストレッサーを有するゲルマニウムフィンfet - Google Patents
金属ゲートとストレッサーを有するゲルマニウムフィンfet Download PDFInfo
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 114
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 229910052751 metal Inorganic materials 0.000 title claims description 5
- 239000002184 metal Substances 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000005669 field effect Effects 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 3
- 229910005898 GeSn Inorganic materials 0.000 claims description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 1
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims 1
- 229910021478 group 5 element Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 239000012535 impurity Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical group [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
【解決手段】フィン電界効果トランジスタは、半導体基板の直上の複数のゲルマニウムフィンであって、これらのゲルマニウムフィンは互いに物理的に分離することと、複数のゲルマニウムフィンの上面と側壁上に配置されたゲートスタックと、ゲートスタックの両側にそれぞれ隣接する第一ソース/ドレイン領域及び第二ソース/ドレイン領域とを備え、第一ソース/ドレイン領域は、それぞれのゲルマニウムフィンから成長し、統合されて単一の第一ソース/ドレイン領域になり、かつ、第二ソース/ドレイン領域は、それぞれのゲルマニウムフィンから成長し、統合されて単一の第二ソース/ドレイン領域になる。
【選択図】図10
Description
実施例の一態様によれば、集積回路構造は、半導体基板上に直接設けられた複数の第一ゲルマニウムフィンであって、第一ゲルマニウムフィンは互いに物理的に分離し(separate)、かつ、互いに電気的に接続すること、第一ゲルマニウムフィンの上面と側壁上の第一ゲート誘電体、及び、第一ゲート誘電体上の第一ゲート電極からなることを備えたn型フィン電界効果トランジスタ(FinFET)と、半導体基板上に直接設けられた複数の第二ゲルマニウムフィンであって、第二ゲルマニウムフィンは互いに物理的に分離し、かつ、互いに電気的に接続すること、第二ゲルマニウムフィンの上面と側壁上の第二ゲート誘電体、及び、第二ゲート誘電体上の第二ゲート電極からなるp型FinFETであって、第一ゲート電極と第二ゲート電極は、4.25eVと4.4eV間の仕事関数(work function)を有する同一材料で形成され、かつ、第一ゲルマニウムフィンと第二ゲルマニウムフィンのゲルマニウム原子百分率は、50パーセントより大きいことと、半導体基板上に直接設けられた複数のダミーフィンからなるダミーフィン構造であって、ダミーフィン構造は、n型FinFETとp型FinFET以外の領域に配置されることとを備えた。
22 〜 シャロートレンチアイソレーション(STI)
32 〜 ゲート誘電層
34 〜 ゲート電極層
35 〜 STI22の上面
100 〜 NMOS素子
124、224 〜 ゲルマニウムフィン
132、232 〜 ゲート誘電層
134、234 〜 ゲート電極層
136、236 〜 ゲートスペーサ
140、240 〜 凹部
141、241 〜 フォトレジスト
142、242 〜 ソース/ドレイン領域
150 〜 NMOS FinFET
200 〜 PMOS素子
250 〜 PMOS FinFET
320 〜 基板
324 〜 ダミーフィン
350 〜 ダミーフィン構造
W 〜 ゲルマニウムフィンの幅
H 〜 ゲルマニウムフィンの高さ
Claims (8)
- 半導体基板の直上の複数のゲルマニウムフィンであって、これらのゲルマニウムフィンは互いに物理的に分離することと、
前記複数のゲルマニウムフィンの上面と側壁上に配置されたゲートスタックと、
前記ゲートスタックの両側にそれぞれ隣接する第一ソース/ドレイン領域及び第二ソース/ドレイン領域と、を備えたフィン電界効果トランジスタ(FinFET)において、
前記第一ソース/ドレイン領域は、それぞれの前記ゲルマニウムフィンから成長し、統合されて単一の第一ソース/ドレイン領域になり、かつ、前記第二ソース/ドレイン領域は、それぞれの前記ゲルマニウムフィンから成長し、統合されて単一の第二ソース/ドレイン領域になるフィン電界効果トランジスタ。 - 前記ゲートスタックは、前記ゲルマニウムフィンの上面と側壁上の第一ゲート誘電体と、前記ゲート誘電体上に配置され、伸長して前記ゲルマニウムフィンと交差するゲート電極と、を備えた請求項1に記載のフィン電界効果トランジスタ。
- 前記ゲート電極は、金属ゲート電極であることを特徴とする請求項2に記載のフィン電界効果トランジスタ。
- 前記ゲルマニウムフィンのゲルマニウム原子百分率は、約50パーセントより大きいことを特徴とする請求項1〜3のいずれか1項に記載のフィン電界効果トランジスタ。
- 前記フィン電界効果トランジスタは、n型であり、かつ、前記第一及び第二ソース/ドレイン領域は、シリコン炭素からなることを特徴とする請求項1〜4のいずれか1項に記載のフィン電界効果トランジスタ。
- 前記フィン電界効果トランジスタは、n型であり、かつ、前記第一及び第二ソース/ドレイン領域は、前記ゲルマニウムフィン中のゲルマニウム原子百分率より低いゲルマニウム原子百分率からなることを特徴とする請求項1〜4のいずれか1項に記載のフィン電界効果トランジスタ。
- 前記フィン電界効果トランジスタは、p型であり、かつ、前記第一及び第二ソース/ドレイン領域は、ゲルマニウム錫(GeSn)からなることを特徴とする請求項1〜4のいずれか1項に記載のフィン電界効果トランジスタ。
- 前記フィン電界効果トランジスタは、p型であり、かつ、前記第一及び第二ソース/ドレイン領域は、III族元素とV族元素からなる化合物半導体(III−V族半導体)材料からなり、前記III−V族半導体材料の格子定数は、前記ゲルマニウムフィンの格子定数より大きいことを特徴とする請求項1〜4のいずれか1項に記載のフィン電界効果トランジスタ。
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US9698060B2 (en) | 2017-07-04 |
JP2013243381A (ja) | 2013-12-05 |
TW201133793A (en) | 2011-10-01 |
JP2011071517A (ja) | 2011-04-07 |
US20160155668A1 (en) | 2016-06-02 |
KR20110033033A (ko) | 2011-03-30 |
CN102034866B (zh) | 2012-12-19 |
US20110068407A1 (en) | 2011-03-24 |
TWI485842B (zh) | 2015-05-21 |
CN102034866A (zh) | 2011-04-27 |
US9245805B2 (en) | 2016-01-26 |
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