JP2013508552A5 - - Google Patents

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JP2013508552A5
JP2013508552A5 JP2012535250A JP2012535250A JP2013508552A5 JP 2013508552 A5 JP2013508552 A5 JP 2013508552A5 JP 2012535250 A JP2012535250 A JP 2012535250A JP 2012535250 A JP2012535250 A JP 2012535250A JP 2013508552 A5 JP2013508552 A5 JP 2013508552A5
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layer
gas phase
reaction chamber
nitrogen
thin film
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JP5809152B2 (ja
JP2013508552A (ja
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Priority claimed from PCT/US2010/052741 external-priority patent/WO2011049816A2/en
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JP2012535250A 2009-10-20 2010-10-14 誘電体膜をパッシベーションする方法 Active JP5809152B2 (ja)

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US25344409P 2009-10-20 2009-10-20
US61/253,444 2009-10-20
PCT/US2010/052741 WO2011049816A2 (en) 2009-10-20 2010-10-14 Processes for passivating dielectric films

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JP2013508552A JP2013508552A (ja) 2013-03-07
JP2013508552A5 true JP2013508552A5 (cg-RX-API-DMAC7.html) 2013-11-21
JP5809152B2 JP5809152B2 (ja) 2015-11-10

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JP2014203157A Active JP5739574B2 (ja) 2009-10-20 2014-10-01 誘電体膜をパッシベーションする方法

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JP (2) JP5809152B2 (cg-RX-API-DMAC7.html)
KR (1) KR101712040B1 (cg-RX-API-DMAC7.html)
TW (1) TWI518202B (cg-RX-API-DMAC7.html)
WO (1) WO2011049816A2 (cg-RX-API-DMAC7.html)

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