JP2013214962A - 底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール - Google Patents
底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール Download PDFInfo
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- JP2013214962A JP2013214962A JP2013043381A JP2013043381A JP2013214962A JP 2013214962 A JP2013214962 A JP 2013214962A JP 2013043381 A JP2013043381 A JP 2013043381A JP 2013043381 A JP2013043381 A JP 2013043381A JP 2013214962 A JP2013214962 A JP 2013214962A
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- 230000003287 optical effect Effects 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims description 25
- 238000005476 soldering Methods 0.000 claims description 13
- 230000000295 complement effect Effects 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 38
- 239000011521 glass Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000000356 contaminant Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000010076 replication Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B19/00—Cameras
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
Abstract
【解決手段】本発明のカメラモジュールは、貫通した開口部と該開口部周りの凹部を定義する取付基板と、画像取込装置の上面に形成されたセンサアレイを含むとともに前記取付基板の前記凹部に取り付けられた集積回路画像取込装置と、前記画像取込装置の前記上面に固定されるとともに前記取付基板の前記開口部を通って延伸する光学素子積層体とを含む。
【選択図】図2
Description
本発明は、レフローはんだ付け条件に耐えることが可能な簡易化ウエハーレベルカメラモジュールを提供することによって、従来技術に関連する問題を克服するものである。以下の記述において、多数の具体的な詳細(例えば、レンズ数、エポキシの種類、電気接点の種類等)を説明することにより、本発明を完全に理解可能なものとする。当業者であれば理解できることではあるが、本発明はこれらの具体的事項とは異なって実施することも可能である。他の例では、公知の電子アセンブリの実施方法及び機器を省略することにより、本発明を不必要に不明瞭としないようにした。
Claims (12)
- 貫通した開口部と該開口部周りの凹部を定義する取付基板と、
画像取込装置の上面に形成されたセンサアレイを含むとともに前記取付基板の前記凹部に取り付けられた集積回路画像取込装置と、
前記画像取込装置の前記上面に固定されるとともに前記取付基板の前記開口部を通って延伸する光学素子積層体とを含むカメラモジュール。 - 前記取付基板が、前記凹部の表面に形成された一連の電気接点を含み、
前記画像取込装置が、前記画像取込装置の前記上面に形成された相補的な一連の電気接点を含み、
前記画像取込装置が、前記電気接点及び前記相補的な電気接点の関連対の間に電気的接続を形成することによって、前記取付基板の前記凹部に取り付けられることを特徴とする請求項1に記載のカメラモジュール。 - 前記取付基板が、前記取付基板をホスト装置の回路基板へと電気的に接続させるために、第2の一連の電気接点をさらに含み、
前記第2の一連の電気接点が前記一連の電気接点に電気的に連結されることにより、前記画像取込装置の電気回路を前記ホスト装置の前記回路基板の電気回路に接続することを特徴とする請求項1に記載のカメラモジュール。 - 前記光学素子積層体、前記画像取込装置、及び前記取付基板が、全てリフローはんだ付け工程に耐えることが可能であることを特徴とする請求項12に記載のカメラモジュール。
- 前記カメラモジュールが、いかなる焦点調整機構も含まないことを特徴とする請求項1に記載のカメラモジュール。
- 前記光学素子積層体が、キャビティと、前記キャビティ内の開口部を定義する底面を含み、
前記光学素子積層体が、前記光学素子積層体の前記底面を前記画像取込装置の前記上面に取り付けることによって、前記画像取込装置の前記上面に固定され、
前記キャビティ内の前記開口部が、前記センサアレイを取り囲み、
前記キャビティが、前記センサアレイの上に空隙を提供することを特徴とする請求項1に記載のカメラモジュール。 - 前記光学素子積層体が複数の個別のレンズ素子を含み、該複数の個別のレンズ素子が互いに直接的に結合されていることを特徴とする請求項1に記載のカメラモジュール。
- 前記凹部が、前記画像取込装置の厚みよりも深いことを特徴とする請求項1に記載のカ
メラモジュール。 - 前記取付基板が事前に形成される部品であることを特徴とする請求項1記載のカメラモジュール。
- 前記画像取込装置がベアダイである請求項1に記載のカメラもジュール。
- 前記取付基板が他の回路基板に取り付けられたとき、前記画像取込装置が邪魔することがないように、前記取付基板の凹部内に完全に設けられてなる請求項1に記載のカメラモジュール。
- 画像取込装置の上面に形成されたセンサアレイを含む集積回路画像取込装置と、
前記画像取込装置の前記上面に固定された光学素子積層体と、
前記集積画像取込装置をホスト装置の回路基板へとリフローはんだ付け工程を用いて取り付ける手段とを備えるカメラモジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US92594607P | 2007-04-24 | 2007-04-24 | |
US60/925,946 | 2007-04-24 |
Related Parent Applications (1)
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JP2010506257A Division JP2010525412A (ja) | 2007-04-24 | 2008-04-24 | 底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール |
Publications (2)
Publication Number | Publication Date |
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JP2013214962A true JP2013214962A (ja) | 2013-10-17 |
JP5814962B2 JP5814962B2 (ja) | 2015-11-17 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2010506257A Pending JP2010525412A (ja) | 2007-04-24 | 2008-04-24 | 底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール |
JP2013043381A Expired - Fee Related JP5814962B2 (ja) | 2007-04-24 | 2013-03-05 | 底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール |
Family Applications Before (1)
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JP2010506257A Pending JP2010525412A (ja) | 2007-04-24 | 2008-04-24 | 底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール |
Country Status (5)
Country | Link |
---|---|
US (2) | US8605208B2 (ja) |
JP (2) | JP2010525412A (ja) |
CN (1) | CN101730863B (ja) |
CA (1) | CA2685080A1 (ja) |
WO (1) | WO2008133943A1 (ja) |
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CA2685080A1 (en) | 2008-11-06 |
WO2008133943A1 (en) | 2008-11-06 |
JP2010525412A (ja) | 2010-07-22 |
US20100053423A1 (en) | 2010-03-04 |
WO2008133943A8 (en) | 2010-04-08 |
JP5814962B2 (ja) | 2015-11-17 |
CN101730863B (zh) | 2011-12-28 |
CN101730863A (zh) | 2010-06-09 |
US8605208B2 (en) | 2013-12-10 |
US20140098288A1 (en) | 2014-04-10 |
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