JP2013062529A5 - - Google Patents
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- JP2013062529A5 JP2013062529A5 JP2012256360A JP2012256360A JP2013062529A5 JP 2013062529 A5 JP2013062529 A5 JP 2013062529A5 JP 2012256360 A JP2012256360 A JP 2012256360A JP 2012256360 A JP2012256360 A JP 2012256360A JP 2013062529 A5 JP2013062529 A5 JP 2013062529A5
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- Prior art keywords
- conductive layer
- layer
- gate electrode
- oxide semiconductor
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 206010029412 Nightmare Diseases 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Claims (3)
- 絶縁表面上の酸化物半導体層と、
前記酸化物半導体層上の第1の導電層及び第2の導電層と、
前記酸化物半導体層の上面及び前記第1の導電層の側面に接する領域を有する第3の導電層と、
前記酸化物半導体層の上面及び前記第2の導電層の側面に接する領域を有する第4の導電層と、
前記酸化物半導体層、前記第1の導電層、前記第2の導電層、前記第3の導電層及び前記第4の導電層上のゲート絶縁層と、
前記ゲート絶縁層上のゲート電極層と、を有し、
前記第1の導電層は、前記ゲート電極層と重なる領域を有し、
前記第2の導電層は、前記ゲート電極層と重なる領域を有し、
前記ゲート電極層は、前記第3の導電層と重なる領域を有し、
前記ゲート電極層は、前記第4の導電層と重なる領域を有することを特徴とする半導体素子。 - 請求項1において、
前記第1の導電層及び前記第2の導電層は、アルミニウム、クロム、銅、タンタル、チタン、モリブデン、タングステン、マンガン、マグネシウム、ジルコニウムまたはベリリウムを含むことを特徴とする半導体素子。 - 請求項1または2において、
前記第3の導電層及び前記第4の導電層は、チタン、アルミニウムまたはタングステンを含むことを特徴とする半導体素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012256360A JP2013062529A (ja) | 2009-12-04 | 2012-11-22 | 半導体素子 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009276004 | 2009-12-04 | ||
JP2009276004 | 2009-12-04 | ||
JP2012256360A JP2013062529A (ja) | 2009-12-04 | 2012-11-22 | 半導体素子 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010268976A Division JP5184615B2 (ja) | 2009-12-04 | 2010-12-02 | 半導体素子 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015094527A Division JP2015167247A (ja) | 2009-12-04 | 2015-05-06 | 半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013062529A JP2013062529A (ja) | 2013-04-04 |
JP2013062529A5 true JP2013062529A5 (ja) | 2013-12-26 |
Family
ID=44081145
Family Applications (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010268976A Expired - Fee Related JP5184615B2 (ja) | 2009-12-04 | 2010-12-02 | 半導体素子 |
JP2012256360A Withdrawn JP2013062529A (ja) | 2009-12-04 | 2012-11-22 | 半導体素子 |
JP2015094527A Withdrawn JP2015167247A (ja) | 2009-12-04 | 2015-05-06 | 半導体素子 |
JP2016225627A Expired - Fee Related JP6285527B2 (ja) | 2009-12-04 | 2016-11-21 | 半導体素子 |
JP2017097938A Withdrawn JP2017168861A (ja) | 2009-12-04 | 2017-05-17 | 半導体装置 |
JP2018208738A Active JP6605110B2 (ja) | 2009-12-04 | 2018-11-06 | 半導体装置の作製方法 |
JP2019188799A Active JP6874091B2 (ja) | 2009-12-04 | 2019-10-15 | 半導体装置の作製方法 |
JP2021071536A Active JP7133678B2 (ja) | 2009-12-04 | 2021-04-21 | 半導体装置 |
JP2022135528A Pending JP2022166322A (ja) | 2009-12-04 | 2022-08-29 | 半導体装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010268976A Expired - Fee Related JP5184615B2 (ja) | 2009-12-04 | 2010-12-02 | 半導体素子 |
Family Applications After (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015094527A Withdrawn JP2015167247A (ja) | 2009-12-04 | 2015-05-06 | 半導体素子 |
JP2016225627A Expired - Fee Related JP6285527B2 (ja) | 2009-12-04 | 2016-11-21 | 半導体素子 |
JP2017097938A Withdrawn JP2017168861A (ja) | 2009-12-04 | 2017-05-17 | 半導体装置 |
JP2018208738A Active JP6605110B2 (ja) | 2009-12-04 | 2018-11-06 | 半導体装置の作製方法 |
JP2019188799A Active JP6874091B2 (ja) | 2009-12-04 | 2019-10-15 | 半導体装置の作製方法 |
JP2021071536A Active JP7133678B2 (ja) | 2009-12-04 | 2021-04-21 | 半導体装置 |
JP2022135528A Pending JP2022166322A (ja) | 2009-12-04 | 2022-08-29 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US8501564B2 (ja) |
JP (9) | JP5184615B2 (ja) |
TW (7) | TWI552231B (ja) |
WO (1) | WO2011068028A1 (ja) |
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