JP2011231108A - 芳香族アミン誘導体、発光素子、発光装置、電子機器、および照明装置 - Google Patents
芳香族アミン誘導体、発光素子、発光装置、電子機器、および照明装置 Download PDFInfo
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- JP2011231108A JP2011231108A JP2011086138A JP2011086138A JP2011231108A JP 2011231108 A JP2011231108 A JP 2011231108A JP 2011086138 A JP2011086138 A JP 2011086138A JP 2011086138 A JP2011086138 A JP 2011086138A JP 2011231108 A JP2011231108 A JP 2011231108A
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
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- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical class C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- JIIYLLUYRFRKMG-UHFFFAOYSA-N tetrathianaphthacene Chemical compound C1=CC=CC2=C3SSC(C4=CC=CC=C44)=C3C3=C4SSC3=C21 JIIYLLUYRFRKMG-UHFFFAOYSA-N 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- CJGUQZGGEUNPFQ-UHFFFAOYSA-L zinc;2-(1,3-benzothiazol-2-yl)phenolate Chemical compound [Zn+2].[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1.[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1 CJGUQZGGEUNPFQ-UHFFFAOYSA-L 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/76—Dibenzothiophenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D307/91—Dibenzofurans; Hydrogenated dibenzofurans
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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Abstract
【解決手段】N,N’−ビス(ジベンゾフラン−4−イル)−N,N’−ジフェニル−ピレン−1,6−ジアミン(略称:1,6FrAPrn−II)、N,N’−ビス(ジベンゾチオフェン−4−イル)−N,N’−ジフェニル−ピレン−1,6−ジアミン(略称:1,6ThAPrn−II)、N,N’−ビス(ジベンゾフラン−2−イル)−N,N’−ジフェニル−ピレン−1,6−ジアミン(略称:1,6FrAPrn)等の化合物。
【選択図】なし
Description
本実施の形態では、本発明の一態様である芳香族アミン誘導体について説明する。
合成スキーム(A−1)に示すように、ジベンゾフラン誘導体、またはジベンゾチオフェン誘導体のハロゲン化物(a1)とアミンを有するアリール化合物(a2)とをカップリングさせることで、アミン誘導体(a3)が得られる。
まず、合成スキーム(A−3)に示すように、ジベンゾフラン誘導体、またはジベンゾチオフェン誘導体のハロゲン化物(a5)とアミンを有するアリール化合物(a6)とをカップリングさせることで、アミン誘導体(a7)が得られる。
本実施の形態では、実施の形態1で示した一般式(G3)、一般式(G9)で表される芳香族アミン誘導体、及び一般式(G6)および一般式(G10)で表される芳香族アミン誘導体について説明する。
高効率、長寿命であり、色純度の高い青色を呈色する一般式(G6)における合成方法としては、種々の反応を適用することができる。一つの例として、合成スキーム(A−5)で得ることができる。
ここで、合成スキーム(A−5)に示した2級芳香族アミン誘導体(a9)の合成方法を、一般式(G11)を用いて説明する。一つの例として、合成スキーム(A−6)で得ることができる。
本実施の形態では、実施の形態1で示した一般式(G4)で表される芳香族アミン誘導体について説明する。特に、一般式(G4)中のα2が上記構造式(α−2)である一般式(G5)において、R1〜R7、R8およびR10が水素原子であり、Ar2が上記構造式(Ar2−1)であり、nが0である一般式(G7)について説明する。さらに、一般式(G4)のうちα2が(α−1)であり、R1〜R7、R8およびR10が水素原子であり、Ar2が上記構造式(Ar2−1)であり、nが0である一般式(G8)で表される芳香族アミン誘導体についても説明する。
一般式(G7)における合成方法としては、種々の反応を適用することができる。一つの例として、合成スキーム(A−7)で得ることができる。
本実施の形態では、実施の形態1乃至3で示した芳香族アミン誘導体を用いて形成した発光素子について説明する。
本実施の形態は、複数の発光ユニット(EL層とも記す)を積層した構成の発光素子(以下、積層型素子という。)の態様について、図3を参照して説明する。この発光素子は、第1の電極と第2の電極との間に、複数の発光ユニットを有する積層型発光素子である。各発光ユニットの構成としては、実施の形態4で示した構成と同様な構成を用いることができる。つまり、実施の形態4で示した発光素子は、1つの発光ユニットを有する発光素子である。本実施の形態では、複数の発光ユニットを有する発光素子について説明する。
本実施の形態では、画素部に実施の形態4または実施の形態5の発光素子を有する発光装置について図4を用いて説明する。なお、図4(A)は、発光装置を示す上面図、図4(B)は図4(A)をA−A’およびB−B’で切断した断面図である。
本実施の形態では、実施の形態6に示す発光装置をその一部に含む電子機器、および照明装置について説明する。電子機器としては、ビデオカメラ、デジタルカメラ等のカメラ、ゴーグル型ディスプレイ、ナビゲーションシステム、音響再生装置(カーオーディオ、オーディオコンポ等)、コンピュータ、ゲーム機器、携帯情報端末(モバイルコンピュータ、携帯電話、携帯型ゲーム機または電子書籍等)、記録媒体を備えた画像再生装置(具体的には、Digital Versatile Disc(DVD)等の記録媒体を再生し、その画像を表示しうる表示装置を備えた装置)などが挙げられる。これらの電子機器の具体例を図6に示す。
1H NMR(CDCl3,300MHz):δ=6.20(s、1H)、6.98−7.03(m、1H)、7.21−7.59(m、10H)、7.95(d、J=7.8Hz、1H)
1H NMR(CDCl3,300MHz):δ=6.86(d、J=7.8Hz、4H)、6.93(t、J=7.2Hz、2H)、7.11−7.22(m、8H)、7.31−7.41(m、6H)、7.70(d、J=6.8Hz、2H)、7.88−7.97(m、6H)、8.08(d、J=8.4Hz、2H)、8.25(d、J=9.0Hz、2H)
MS(ESI−MS):m/z=717(M+H)+;C52H32N2O2(716.25)
まず、本実施例で用いる参照電極(Ag/Ag+電極)の真空準位に対するポテンシャルエネルギー(eV)を算出した。つまり、Ag/Ag+電極のフェルミ準位を算出した。メタノール中におけるフェロセンの酸化還元電位は、標準水素電極に対して+0.610[V vs. SHE]であることが知られている(参考文献;Christian R.Goldsmith et al., J.Am.Chem.Soc., Vol.124, No.1,83−96, 2002)。一方、本実施例で用いる参照電極を用いて、メタノール中におけるフェロセンの酸化還元電位を求めたところ、+0.11V[vs.Ag/Ag+]であった。したがって、この参照電極のポテンシャルエネルギーは、標準水素電極に対して0.50[eV]低くなっていることが確認できた。
CV測定における溶液は、溶媒として脱水ジメチルホルムアミド(DMF)((株)アルドリッチ製、99.8%、カタログ番号;22705−6)を用い、支持電解質である過塩素酸テトラ−n−ブチルアンモニウム(n−Bu4NClO4)((株)東京化成製カタログ番号;T0836)を100mmol/Lの濃度となるように溶解させ、さらに測定対象を2mmol/Lの濃度となるように溶解させて調製した。また、作用電極としては白金電極(ビー・エー・エス(株)製、PTE白金電極)を、補助電極としては白金電極(ビー・エー・エス(株)製、VC−3用Ptカウンター電極(5cm))を、参照電極としてはAg/Ag+電極(ビー・エー・エス(株)製、RE7非水溶媒系参照電極)をそれぞれ用いた。なお、測定は室温(20〜25℃)で行った。また、CV測定時のスキャン速度は、0.1V/secに統一した。
1H NMR(CDCl3,300MHz):δ=5.66(s、1H)、6.95−7.00(m、1H)、7.07−7.10(m、2H)、7.27−7.50(m、6H)、7.83−7.89(m、2H)、8.13−8.19(m、1H)
1H NMR(CDCl3,300MHz):δ=6.92−7.02(m、6H)、7.20−7.27(m、6H)、7.35−7.46(m、6H)、7.66−7.69(m、2H)、7.81(d、J=8.4Hz、2H)、7.87(d、J=9.0Hz、2H)、7.96(d、J=7.8Hz、2H)、8.03(d、J=8.4Hz、2H)、8.15−8.18(m、4H)
MS(ESI−MS):m/z=748(M+H)+;C52H32N2S2(748.2)
1H NMR(CDCl3,300MHz):δ=6.94(t、J=6.9Hz、2H)、7.02(d、J=7.8Hz、4H)、7.15−7.46(m、12H)、7.53(d、J=8.4Hz、2H)、7.72−7.75(m、4H)、7.82−7.86(m、2H)、7.90−7.93(m、2H)、8.09−8.14(m、2H)、8.17−8.23(m、2H)
MS(ESI−MS):m/z=717(M+H)+;C52H32N2O2(716.25)
1H NMR(CDCl3,300MHz):δ=6.95−7.00(m、2H)、7.08−7.11(m、4H)、7.02−7.42(m、10H)、7.68(d、J=8.1Hz、2H)、7.80−7.94(m、10H)、8.11(d、J=8.4Hz、2H)、8.21(d、J=9.3Hz、2H)
MS(ESI−MS):m/z=749(M+H)+;C52H32N2S2(748.2)
1H NMR(CDCl3,300MHz):δ=6.98−7.03(m、2H)、7.09−7.14(m、4H)、7.19−7.39(m、16H)、7.48−7.51(m、4H)、7.70(t、J=1.8Hz、2H)、7.82−7.87(m、4H)、7.92(d、J=8.1Hz、2H)、7.98(d、J=9.3Hz、2H)、8.15(d、J=8.4Hz、2H)、8.27(d、J=9.0Hz、2H)
MS(ESI−MS):m/z=869(M+H)+;C64H40N2O2(868.31)
1H NMR(CDCl3,300MHz):δ=7.00−7.44(m、28H)、7.90−7.97(m、6H)、8.00(d、J=9.3Hz、2H)、8.17(d、J=8.4Hz、2H)、8.27(d、J=9.3Hz、2H)
MS(ESI−MS):m/z=901(M+H)+;C64H40N2S2(900.26)
MS(ESI−MS):m/z=336(M+H)+;C24H17NO(335.13)
1H NMR(CDCl3,300MHz):δ=7.02(t、J=6.9Hz、2H)、7.20−7.48(m、18H)、7.56(d、J=7.8Hz、4H)、7.81(d、J=8.7Hz、4H)、7.88−8.01(m、8H)、8.17(d、J=8.4Hz、2H)、8.23(d、J=9.3Hz、2H)
MS(ESI−MS):m/z=869(M+H)+;C64H40N2O2(868.31)
まず、ガラス基板である基板2101上に、陽極2102を形成した。まず、スパッタリング法にて、厚さ110nmの酸化珪素を含む酸化インジウム−酸化スズ膜を形成し、形成した膜を電極面積が2mm×2mmとなるように加工した。
発光素子2において、発光層2105以外は、発光素子1と同様に形成した。発光素子2は、発光層2105として、9−[4−(10−フェニル−9−アントリル)フェニル]−9H−カルバゾール(略称:CzPA)とN,N’−ビス(ジベンゾチオフェン−4−イル)−N,N’−ジフェニル−ピレン−1,6−ジアミン(略称:1,6ThAPrn−II)とを共蒸着法により形成した。形成した発光層2105の厚さは30nmとし、CzPAと1,6ThAPrn−IIとの重量比は、1:0.05(=CzPA:1,6ThAPrn−II)となるように蒸着レートを調節した。
発光素子3において、発光層2105以外は、発光素子1と同様に形成した。発光素子3は、発光層2105として、9−[4−(10−フェニル−9−アントリル)フェニル]−9H−カルバゾール(略称:CzPA)とN,N’−ビス(ジベンゾフラン−2−イル)−N,N’−ジフェニル−ピレン−1,6−ジアミン(略称:1,6FrAPrn)とを共蒸着法により形成した。形成した発光層2105の厚さは30nmとし、CzPAと1,6FrAPrnとの重量比は、1:0.01(=CzPA:1,6FrAPrn)となるように蒸着レートを調節した。
発光素子4において、発光層2105以外は、発光素子1と同様に形成した。発光素子4は、発光層2105として、9−[4−(10−フェニル−9−アントリル)フェニル]−9H−カルバゾール(略称:CzPA)とN,N’−ビス(ジベンゾチオフェン−2−イル)−N,N’−ジフェニル−ピレン−1,6−ジアミン(略称:1,6ThAPrn)とを共蒸着法により形成した。形成した発光層2105の厚さは30nmとし、CzPAと1,6ThAPrnとの重量比は、1:0.01(=CzPA:1,6ThAPrn)となるように蒸着レートを調節した。
基板2101上に陽極2102を実施例8と同様にして形成した。次に、発光素子5の正孔注入層2103として、陽極2102上に、9−フェニル−3−[4−(10−フェニル−9−アントリル)フェニル]−9H−カルバゾール(略称:PCzPA)と酸化モリブデン(VI)とを実施例8で記載した共蒸着法により形成した。形成した正孔注入層2103の厚さは50nmとし、PCzPAと酸化モリブデン(VI)の比率は、重量比で4:2(=PCzPA:酸化モリブデン)となるように蒸着レートを調節した。
基板2101上に陽極2102を実施例8と同様にして形成した。
基板2101上に陽極2102、正孔注入層2103、および正孔輸送層2104を実施例8と同様にして形成した。
102 電極
103 EL層
104 電極
111 第1の層(正孔注入層)
112 第2の層(正孔輸送層)
113 第3の層(発光層)
114 第4の層(電子輸送層)
115 第5の層(電子注入層)
311 第1の発光ユニット
312 第2の発光ユニット
313 電荷発生層
321 第1の電極
322 第2の電極
401 ソース側駆動回路
402 画素部
403 ゲート側駆動回路
404 封止基板
405 シール材
407 空間
408 配線
409 FPC(フレキシブルプリントサーキット)
410 素子基板
411 スイッチング用TFT
412 電流制御用TFT
413 電極
414 絶縁物
416 EL層
417 電極
418 発光素子
423 Nチャネル型TFT
424 Pチャネル型TFT
501 基板
502 電極
503 電極
504 EL層
505 絶縁層
506 隔壁層
611 筐体
612 支持台
613 表示部
614 スピーカー部
615 ビデオ入力端子
621 本体
622 筐体
623 表示部
624 キーボード
625 外部接続ポート
626 ポインティングデバイス
631 本体
632 筐体
633 表示部
634 音声入力部
635 音声出力部
636 操作キー
637 外部接続ポート
638 アンテナ
641 本体
642 表示部
643 筐体
644 外部接続ポート
645 リモコン受信部
646 受像部
647 バッテリー
648 音声入力部
649 操作キー
650 接眼部
700 卓上照明器具
701 照明装置
2101 基板
2102 陽極
2103 正孔注入層
2104 正孔輸送層
2105 発光層
2106 電子輸送層
2107 電子注入層
2108 陰極
Claims (14)
- 一般式(G1)で表される芳香族アミン誘導体。
(式中、Aは、酸素または硫黄を表し、R1〜R7は、それぞれ独立に、水素原子、炭素数1〜6のアルキル基、置換若しくは無置換のフェニル基、さらに、置換若しくは無置換のビフェニル基のいずれかを表す。さらに、α1およびα2は、それぞれ独立に、置換または無置換のフェニレン基を表す。さらに、Ar1は、環を形成する炭素数14〜18の、置換または無置換の縮合芳香族炭化水素を表す。さらに、Ar2は、環を形成する炭素数6〜13の、置換または無置換のアリール基を表す。j、nは、それぞれ独立に0または1であり、pは、1または2である。) - 一般式(G2)で表される芳香族アミン誘導体。
(式中、Aは、酸素または硫黄を表し、R1〜R7は、それぞれ独立に、水素原子、炭素数1〜6のアルキル基、置換若しくは無置換のフェニル基、さらに、置換若しくは無置換のビフェニル基のいずれかを表す。さらに、α1およびα2は、それぞれ独立に、置換または無置換のフェニレン基を表す。さらに、Ar1は、環を形成する炭素数14〜18の、置換または無置換の縮合芳香族炭化水素を表す。さらに、Ar2は、環を形成する炭素数6〜13の、置換または無置換のアリール基を表す。j、nは、それぞれ独立に0または1であり、pは、1または2である。) - 請求項1または請求項2において、
前記一般式(G1)または前記一般式(G2)中のAr1は、下記一般式(Ar1−1)または(Ar1−2)で表されるいずれか一である芳香族アミン誘導体。
(一般式(Ar1−1)および(Ar1−2)中、R8〜R10は、それぞれ独立に、水素原子、炭素数1〜6のアルキル基、置換若しくは無置換のフェニル基、さらに、置換若しくは無置換のビフェニル基のいずれかを表す。ただし、(Ar1−1)の場合、前記一般式(G1)および前記一般式(G2)中のpは1であり、(Ar1−2)の場合、前記pは2である。) - 一般式(G4)で表される芳香族アミン誘導体。
(式中、Aは、酸素または硫黄を表し、R1〜R7およびR8、R10は、それぞれ独立に、水素原子、炭素数1〜6のアルキル基、置換若しくは無置換のフェニル基、または、置換若しくは無置換のビフェニル基のいずれかを表す。さらに、α1およびα2は、それぞれ独立に、置換または無置換のフェニレン基を表す。さらに、Ar2は、環を形成する炭素数6〜13の、置換または無置換のアリール基を表す。nは0または1である。) - 請求項1乃至請求項4のいずれか一において、
前記α1およびα2は、それぞれ独立に、下記構造式(α−1)〜(α−3)で表されるいずれか一である芳香族アミン誘導体。
- 一般式(G3)で表される芳香族アミン誘導体。
(式中、Aは、酸素または硫黄を表し、R1〜R7およびR8、R10は、それぞれ独立に、水素原子、炭素数1〜6のアルキル基、置換若しくは無置換のフェニル基、または、置換若しくは無置換のビフェニル基のいずれかを表す。さらに、α1は、置換または無置換のフェニレン基を表す。さらに、Ar2は、環を形成する炭素数6〜13の、置換または無置換のアリール基を表す。nは0または1である。)
- 一般式(G5)で表される芳香族アミン誘導体。
(式中、Aは、酸素または硫黄を表し、R1〜R7およびR8、R10は、それぞれ独立に、水素原子、炭素数1〜6のアルキル基、置換若しくは無置換のフェニル基、または、置換若しくは無置換のビフェニル基のいずれかを表す。さらに、α1は、置換または無置換のフェニレン基を表す。さらに、Ar2は、環を形成する炭素数6〜13の、置換または無置換のアリール基を表す。nは、0または1である。) - 請求項6および請求項7において、
前記α1は、下記構造式(α−1)〜(α−3)で表されるいずれか一である芳香族アミン誘導体。
- 請求項1乃至請求項8のいずれか一において、
前記Ar2は、下記構造式(Ar2−1)〜(Ar2−6)で表されるいずれか一である芳香族アミン誘導体。
- 請求項1乃至請求項9のいずれか一において、
前記R1〜R10は、それぞれ独立に、下記構造式(R−1)〜(R−9)で表されるいずれか一である芳香族アミン誘導体。
- 一対の電極間にEL層を有する発光素子であって、
前記EL層は、請求項1乃至請求項10のいずれか一に記載の芳香族アミン誘導体を含む発光素子。 - 請求項11に記載の発光素子を用いて形成された発光装置。
- 請求項12に記載の発光装置を含む電子機器。
- 請求項12に記載の発光装置を含む照明装置。
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