TWI285441B - Layer assembly for a light-emitting component - Google Patents

Abstract

The invention relates to a layer assembly for a light-emitting component, in particular a phosphorescent organic light-emitting diode, having a hole-injecting contact and an electron-injecting contact which are each connected to a light-emitting region, wherein, in the light-emitting region, one light-emitting layer is made up of a material (M1) mad another light-emitting layer is made up of another material (M2), where the material (M1) is ambipolar and preferentially transports holes and the other material (M2) is ambipolar and preferentially transports electrons; a heterotransition is formed by the material (M1) and the other material (M2) in the light-emitting region; an interface between the material (M1) and the other material (M2) is of the staggered type II; the material (MI) and the other material (M2) each contain an appropriate addition of one or more triplet emitter dopants; and an energy barrier for transfer of holes from the material (M1) into the other material (M2) and an energy barrier for transfer of electrons from the other material (M2) into the material (M1) are each less than about 0.5 eV.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a combination of light-emitting component layers, particularly an organic light-filled light-emitting diode (〇LHD>. A prior art component having a combination of layers is described in document W〇. 03/100880. As demonstrated by Baldo et al. (Applied Physics Letters 75(1), 4-6 (1999) or _ Ikai et al. (Applied Physics Letter 79(2) 356-158 (2001), a typical implementation of such a component is based on a simple luminescent layer (EML) comprising a mixture of a host material and a phosphorescent dopant, if it has, for example, in a Baid(R) or the like (containing Ir(ppy)3 (partial 参(p-phenylpyridinium) ruthenium) 06?(4,4'-:^:^'_dicarbazole biphenyl]]]]1) or 4,4,-bis(carbazol-9-ylbiphenyl) and Ikai include Ir ( Ppy) 3 doped TCTA (4,4,,4,,_tris(N-carbazolyl)triphenylamine (EML) is described in the study of hole transport properties, with very high free energy The electrical Φ hole barrier layer (HBL) composed of materials is called BCP (toward red 2, 2, biquinoline, 2,9-dimethyl-4,7-diphenyl 1, ι〇·菲罗Porphyrin) in the case of Bald〇 et al. and perfluorinated star The material is necessary between the light-emitting layer and the electron transport layer or the cathode in the case of Ikai, etc. On the other hand, if the EML is mainly an electronic conductive feature, as in Adachi et al. (Applied Physics 9 (1〇), 5 Implementation of 〇48-5051 (2001)) This EML contains an electron transport material TAZ (1,2,4-triazole derivative, such as 3-(4-), which is doped with an ir complex as an emitter dopant. Biphenyl)-4- 1285441·Phenyl-5-t-butylphenyl-1,2,4-triazole), required by an electron barrier layer (EBL) composed of a material with very low electron affinity On this

Adachi et al. used 4,4'-bis[N,N'-(3-methylphenyl)amine]_3,3,-dimercaptobiphenyl (HM-TPD). However, especially in the case of high lumens, this creates problems with the accumulation of holes/electrons in the electron-barrier layer of the hole, which causes a decrease in efficiency with increasing lumens. - A further problem is that charge carrier accumulation accelerates the degradation of OLEDs. Furthermore, good hole barrier materials are often electrochemically unstable. For 10 such as the use of a wide range of materials to red 2, 2 '- 啥 啥 (BCP), to red phenoline (Bphen) and 2, 2 ', 2 ''-benzene triyl) ginseng [丨-phenyl _ Ih_benzimidazole] (TPBI) is true as a barrier material for holes (Ref. Kwong et al., (should, use physical letters 81, 162 (2002)). In document WO 03/100880, bipolar luminescent layer (EML) EML 1 and EML 2 are used for the combination of organic phosphorescent light-emitting diode layers: anode = ITO / hole transfer layer (HTL), F4-TCNQ doped with MeO_TPD/HTL 2 = spiro-TAD/EML 1 = TCTA : Ir(ppy)3/ EML 2= φ Bphen·· Ir(ppy)3/electron transfer layer (ETL) ETL 2=BPhen/ETL 1= Bphen: Cs-doping/cathode=A1. In this case from EML 2 electrons, the energy barrier for injecting EML 1 is about 0.5 eV.

~ Organic luminescent light-emitting diodes are also disclosed in document WO 02/071813 A1, in which the light-emitting region has two holes-transmitting materials/electron-transporting materials (each of which has the same triple weight) An emissive dopant doped with an emissive layer. The known assembly has a problem that the energy barrier of the 8 1285441 is high between the hole transfer material and the electron transfer material, so that the accumulation of the charge carriers occurs in the light-emitting region, which causes the excitons to be quenched by the charge wear (triple weight) High thermal energy of the polaron. In addition, the generation of excitons occurs substantially at the interface between the hole transfer portion and the electron transfer portion of the module, and therefore, the high local doublet exciton density occurs in this region, which produces three, f, and triple The high probability of self-annihilation. The triple-polarization sub-segment • The A and triplet states and the three money's self-depletion at a relatively high current density result in a decrease in quantum efficiency. SUMMARY OF THE INVENTION The object of the present invention is to provide a layer combination of a light-emitting component, in particular a plexiluminescent organic light-emitting diode, which has improved luminescent properties, in particular a high lumen, modified quantum efficiency, and increased lifetime. . This object is achieved according to the invention by a combination of illuminating component layers according to item i of the independent patent application, which is the subject of the dependent claims. I, body implementation Broad 2 provides the concept of at least two bipolar layers, the basin is in the layer, "the "area" is also known as the illuminating area, a priority transmission: electronic and another priority transmission hole. Silent no transfer - the charge carrier of the form first transfers the charge of the preferred component of the current component layer if the hole's mobility is more than that of the other type of charge carrier. Also known as staggered ", 4 conversion, also known as between the organic material 9 1285441 t (Ml) and another organic material (M2), the staggered form π" of the different transfer when the priority transmission hole (4) (Ml) When the electrons are preferentially transferred, the other material (Μ 2) is low free energy and low electron affinity is the highest occupied (Η0Μ0) and the lowest occupied orbit ((1) LUMQ) is closer to the vacuum energy than other materials (Μ2). ^The hole from the material (Ml) into another material (Μ2) is injected into the moon b barrier and from another material (Μ2) into the material (mi). Electron implantation energy barrier. • The organic material-based layer for the purpose of the present invention is a bipolar layer when the electron mobility and hole mobility in the layer differ by less than about two orders of magnitude and the bipolar layer. The organic material is reversibly reduced and oxidized based on the electrochemical stability of the radical cation and the organic The free radical anion of the material. The bipolar property is preferably such that the energy transfer point from the hole (h〇m〇_the highest occupied molecule) is lower than the hole transfer energy of the conventional hole transfer material by no more than about 0.4 electrons. Volt, preferably not more than about 电子3 electrons·volts, is more prominently composed to make hole injection possible. Conventional hole transfer materials are, for example, N, N, · II (naphthalene·2 _,. diphenyl) • Benzidine (NPD). HOMO energy system from about 5.5 eV to about 5.7 eV below vacuum energy is reported for this reference except for the incision of HOMO energy as an alternative to the bipolar system. The electron transfer energy level of the organic material of the bipolar layer is higher than that of the conventional electron transport material, for example, the electron transfer energy level is not more than about 0.4 eV, preferably not more than about Q3 electron volts of 1285441*. It can be checked by estimating the LUM0 energy ("LUM (> lowest unoccupied molecular trajectory,)), which is known per se to those skilled in the art, including, inter alia: a) free energy (IP) Measurements, such as by photoelectron spectroscopy, and optical absorption Limiting Eg p and estimating the LUMO energy in vacuum by IP-Egopt. In the case of Alq3, a LUMO level from about 2.9 eV to about 3.1 eV is obtained, which is lower than the vacuum energy level. b) An electrochemical decision of the reduction potential, in this case, was found to have an electrical φ position of -3·3 volts relative to ferrocene/ferrocene +, which corresponds to an electron affinity of about 2.5 eV. c) The lUM energy level of the organic material used for the bipolar layer in the case of Alqs is determined by an inspection of the energy barrier across the electron transfer to the Alq3 interface. An organic layer having bipolar properties can be obtained by: i) using a monopolar organic matrix material with an illuminant material having complementary transfer properties, for example, when the matrix material is electron-transported, the illuminant material is a hole Passed, or vice versa. In this embodiment, the ratio of hole mobility and electron mobility can be set by the dopant concentration in the illuminant material. The matrix consisting of a monopolar hole transfer matrix material is called a "single carrier hole, a matrix, and, a single carrier electron substrate is a matrix composed of a monopolar electron transport matrix material. A bipolar matrix material can be used. iii) In a further embodiment, a mixture of two matrix materials and one illuminant material is used, and one of the matrix materials is 11 U85441

The ratio of the hole mobility and the electron mobility transmitted by the hole and the other matrix material is set by the mixing ratio, and the molecular mixing ratio is in the range from 1:10 to 1〇:1. The advantage of the present invention over prior art is that the combination of the plurality of layers in the illuminating region has a self-balancing characteristic with respect to the desired balance of electron injection and hole injection, which avoids accumulation of charge carriers at the interface. The interface to the adjacent transfer or barrier layer can be avoided, especially for the advantages of Adachi et al. (Applied Physics 9〇(1〇), 5〇48_5〇51(2〇〇1): And also within the layer between the layers of the illuminating region; the | surface, which produces a more advanced advantage than the prior art from the file wo 〇 2 / 〇 71813 A1. As a result, the illuminating region of the layer combination is formed by injection. The very wide (4) domain of electron and hole distribution and the wide i-region of the 敎-state (exciton). Because of the high local charge carrier density degradation method and between charge carriers and excitons and between excitons The effective reduction quenching method is minimized in this way. The illuminating region may have more than two luminescent layers, such as in the text.

W〇 〇3/1〇_巾, the contents of which are incorporated herein by reference. The triple emitter dopant of the light-emitting layer of I may be the same or different from the charge carrier transport layer and/or the hole- or electron-transfer layer may be omitted on the electron side and/or the off-off such that the light-emitting layer Directly with the hairline domain __ (anode, cathode) or the adjacent layer (which is adjacent to the load transfer layer, which is by the self-balancing property of the layer system of the layer system in the light-emitting region) It is possible because otherwise the excitons can be quenched at the metal contact or at the contact point with the dopant or the charge carrier will cross the OLED and recombine without being at another contact or doped The transfer layer emits radiation. • In the following examples, the following abbreviations are used: HTL-hole transmission layer, ETL_ electron transport layer, EML-layer in the light emission region, ΕΒ1^ electron blocking Layer and HBL·hole blocking layer. 实例 Example 1 In the first example, the following combination of layers is provided as a light-emitting component: Anode = ΙΤΟ / HTL Bu F4-TCNQ (tetrafluorotetracyano-p-phenylene dimethane) Mix ratio from ι ι 耳 耳 % to ίο 莫 % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % Nano, preferably having a layer thickness of from about 50 nm to about 2 nm, is doped into Ν, Ν, Ν', Ν'- four (4_曱-oxyphenyl) benzidine (Me〇- TpD)/ HTL2=2,2',7,7'_ four (N,N'-diphenylamine)·9,9,_spiral 芴

#(螺_TAD), having a layer thickness of from about 1 nm to about 30 nm, preferably from about 3 nm to about 15 nm, and preferably less than HTU • is thin / two ^ EML1 = TCTA: Ir (attached) 3 having a concentration of lr(ppy)3 from about 1 mole % to about 50 mole %, preferably from about 3 to about 3 mole %, and from about 2 nm Up to about 30 nm, preferably from about 3 nm to about 15 nm layer thickness / EML2 = TPBI: Ir(ppy)3, with Ir(ppy)3 concentration from about i 13 1285441 mole % to About 50 mole %, preferably from about 3 to about 30 moles 0 / 〇, and from about 2 nanometers to about 30 nanometers, preferably from about 3 nanometers to about 15 nanometers. / ETL2 = bis (2-methyl-8-hydroxy porphyrin) bucket (phenyl phenolate) Ming • (III) (BAlq2), which has a self-conversion of from about 1 nm to about % nanometer, preferably from - a layer thickness of from about 3 nm to about 15 nm, and ETL2 is preferably comparative, ETL1 is thin, and the control feature is obtained by using BPhen instead of BAlq2 as ETL2. / ETLl=Bphen:Cs- ι Moole% to 1:1 molar ratio Cs concentration doping, and from about 30 nm to about 500 nm, preferably from about 50 nm to about 200 nm layer thickness / Cathode = A1. The electron transfer in EML1 can be selectively assisted by a layer consisting of a mixture of the three components TCTA, TPBI and lr(ppy)3 at a mixing ratio of 46%/46%/8%, and electrons entering EML1 from EML2. The injection energy barrier is less than about 〇·3 eV in this case, and the injection energy barrier from the φ EML1 into the EML2 in this case is about 〇 electron volts 'because the holes in EML1 and EML2 pass to jump to 'k ( Ppy)3 occurs, or may even be negative when the hole travels from the _TCTA state to the Ir(ppy)3 state in EML2. In this example, the incorporation of a redox dopant such as a receptor such as F4-TCNQ or an donor such as Cs, and a luminescent dopant such as Ir(ppy)3 can be achieved by two under reduced pressure. The mixed evaporation of individually controlled sublimation sources is assisted by specific temperature-time data by other suitable methods such as continuous application of the material by evaporation under reduced pressure, and then 54 diffusion into each other. In this first example, the bipolarity of EML2 is achieved by the hole transfer properties of the electron transport materials TPBI and BPhen's Ir(ppy)3, which can be selectively mixed into EML2 to assist in hole transfer, but TCTA The concentration of EML2 should always be less than the concentration at EML1. Example 2 The second example has a structure similar to that of Example 1 above, except that ETL2 is composed of Alq3; anode = ΓΓ〇 / HTL1 = F4_TCNQ - doped MeO-TPD / HTL2 = snail - TAD / EML1 = TCTA: Ir ( Ppy)3/EML2=TPBI: Ir(ppy)3/ ETL2= Alq3/ ETLl=Bphen: Cs-doping/cathode This example demonstrates the self-balancing of the structure, which, if desired, allows it to completely eliminate the hole _ and / or electronic _ barrier layer. Alqs does not have any hole blocking effect, but is more stable than typical hole blocking materials such as BCP. In this example, Alq3 assists in the electron injection from Bphen:Cs into EML2. Example 3 In the two examples, the structure is not simplified by the provided electron barrier layer or by the hole barrier layer, but in this case, only one barrier layer can be omitted: anode = ITO / Me0 - TPD / EML1=TCTA: HTL1=F4-TCNQ-doped Ir(PPy)3/EML2=TPBI:

Ir(ppy)3/ ETLl=BPhen: CM doping/cathode=Ab 1284441 " Example 4 An example of a modification of the constituent example 3, which has the following structure: anode = ITO / commit [1 = ^ 4-buty ^ (5_Doped Me0-TPD/HTL2=Spiral•TAD/EML1=TCTA: Ir(ppy)3/EML2=TPBI: • Ir(ppy)3/ETLl=Bphen:CS_ Doping/Cathode=Ab '3rd The figure shows the lumen function of the fourth example (triangle) and the fifth instance • (circle) as the experimental result of power efficiency. The above example has a p-i_n structure, which indicates that the acceptance system is incorporated into the hole_transport layer and The donor system is incorporated into the electron transport layer. If the donor system is in the electron transport layer ETL1', the ETL2 is omitted, and the pii structure is obtained. If the acceptor system is in the hole transport layer HTL1, the HTL2 is omitted to form the iin structure, when the donor is omitted and accepted. In the case of a body, an i_i_i structure is formed. The structure can be combined with the above-mentioned EML1 and EML2 structures in the light-emitting region. Example 5__ Further examples provide a light-emitting assembly comprising a hole injection contact point, optionally one or more holes Injection and hole transfer φ layer, illuminating region, selectively one or more electron injection and electricity a layer combination of a sub-transport layer and an electron injecting contact point, wherein: - at least one layer in the light-emitting region is composed of a mixture of a host material and a phosphorescent: photo-dopant, - the matrix material is A covalently coupled divalent element consisting of a bipolar or electron transport structure and a bipolar or hole transfer structure, and - the bivalent material comprises a subunit having an individual 7" electronic system. Composed of one way such that one of the subunits of the two 1 285 441 valence elements can preferentially occupy an additional hole such that one HOMO wave function is concentrated on one of the two subunits and the other of the subunits of the divalent element is Preferentially occupying additional electrons causes the LUMO wave function to be concentrated here (giving the body-receiver bivalent element, prime). ~ This transfer bipolarity in the illuminating region is also improved, because - is a bipolar general widening generating region And no longer uniquely concentrated in the vicinity of the interface, this applies, in particular, when the charge carrier mobility is independent of the other of the substances 10 to achieve a very balanced And preferably produced in the center of the EML. This is achieved by using donor-receiver bivalent elements - (DADs) consisting of two parts with complementary transfer characteristics, since the subunit can be The electronic transmission and the hole transmission are optimized individually. The viewpoint of the next (four) point / correcting the efficiency of the coffee in Su Ben w, then on the low operating voltage of QLEDS is desired, I want to: From ~, this bit is the energy of 鬲, because otherwise the excitons of the illuminant are quenched by the matrix material, the two requirements are contradictory. The double-state energy is significantly more than the singlet energy due to the interchange effect: this gap) Or the energy (electrical energy gap) of the charge pair of the free carrier is 'here, the difference between the singlet energy and the three money energy is related to the spatial overlap of H〇M ( UM〇. In the case where the HOMO is limited to a divalent element of a subunit different from that of the driver 17 1285441 LUMO, the difference is thus negligibly small. If the difference between the HOMO energy of the subunit and the LUMO energy is sufficiently large, the lowest single excitation state of the DAD is a charge transfer exciton, which has a lower molecular weight than the Kerr exciton. The exciton combines energy so that the light and power gaps are also closer to each other. In general, the difference between the electrical gap of the matrix and the triplet energy of the scale dopant when using DADs is comparable to that of materials with large overlaps of H〇M〇s and LUMOs. 0 is reduced. One possible implementation of such a DAD is a helically bonded molecule composed of CBP and TAZ units. As shown in Fig. 4, the electrical energy gap is generated by the HOMO of CBP and the LUMO of TAZ, and the lowest single and triplet states. The excitation state corresponds to the values of the two components. Basket Level Figures The various embodiments (some of which include the above examples) and the energy level diagrams of still further embodiments are described below with reference to Figures 5 through 12, φ hereinafter. Figure 5 is a schematic representation of a) a simple material with a contiguous 疋 electronic system, b) a subunit D of the DAD (giving a subunit) and a Α (receiving a 'unit') where the HOMO energy of the subunit At least one of the energy differences between the bits or the lUM〇 energy bits is small, preferably less than about 〇5 volts, such that the lowest singlet excited state is one of the subunits of the Flenkel Sub, and C) the subunits of the DAD (giving the subunits) and A (the accepting subunits) where the energy difference between the h〇m〇 energy of the subunit or the 1285441 LUMO energy level is ^ For the larger one, it is better to ΐ 得 to get the low single-excitation "w in the early 70 Α electrons and in the sub-single ^ exciton. The charge of the hole is the most: /Γ! Example describes a kind of energy that produces the minimum operating voltage: = shift = to improve the efficiency of energy transfer, or to avoid the transfer of excitons _ cold method

= Method 'The system' is defined in the first :) = (4) The lowest excited state is the Fronkel exciton in the 1, /, -, because the energy difference ("offset") of which - 杈 "Kerr exciton The combined energy is +, and the advantage of the operating voltage compared to a simple material with a high spatial HOMO LUM0 weight of 32 remains, although the difference between the singlet and triplet is not reduced here, the light and the power gap move together. In order to avoid the confusion between the single-particle energy and the energy of the excited state, the energy level of the electron/hole in Figure 5 has been represented by Ee/Eh, which basically corresponds to the LUMO/ of the subunit. HOMO energy, although in this document the name LUM0 is not used in a particularly consistent manner, and the excitation energy is expressed in terms of the spin multiplicity as a heart or Tn, and CT is represented by the electrode in the subunit and in the subunit d The charge formed by the hole transmits the energy of the excitons, which is largely independent of the spin multiplicity. In the case of b) and c) of Figure 5, the matrix has a smaller energy gap in the same triplet energy. (Egel), making the phosphorescent LED operable at a lower operating voltage. 41 Fig. 6 is a view schematically showing an energy level diagram of an example in which the material (M1) of one of the layers EML 1 in the light-emitting region includes a bipolar, one-component material and the other material of the other layer EML2 in the light-emitting region includes a single The carrier electron matrix, and the hole transfer can be caused by a jump between the dopant states. The upper line indicates that the LUMO energy level, that is, the individual electron transfer energy level 'bottom line indicates the HOMO energy level, that is, the hole transmission Energy level, and 'also shows anode A and cathode symbolized by their Fermi energy levels | K° In the example shown, it is assumed that HTL1 is p-doped and HTL2 is η-doped, 6 In the figure, the energy levels shown by the dashed lines in the radiation layers EML1 and EML2 represent the energy levels of the dopants of the illuminant, the arrows 6〇, 61 represent the energy levels of charge carrier transfer, and the arrows 62 and 63 represent the better of the material system. The transfer form. The HOMO level and the LUMO energy, the energy arrangement of the EMLs is important, and the HOMO shift between HTL2 and EML1 and the LUMO shift between Etl2 and EML2 are not too large and important. Preferably, the offset is less than about 〇·5 • electron volts, more preferably less Approximately 0.3 electron volts. Figure 7 is a schematic diagram showing an energy level diagram of an example in which the material (M1) of one of the layers EML1 in the light-emitting region comprises a mixture of a hole transporting material, an electron transporting material, and a triplet dopant. The other material (M2) of the other layer EML2 in the illuminating region comprises a single carrier matrix, and the hole transfer can occur by jumping between dopant states. The dashed line indicates the energy level of the illuminant dopant. The horizontal-dashed table is not at the energy level of the EML1 electron-transfer component. Finally, the solid line at EML1's •1285441 indicates the energy level of the hole-transfer component. Figure 8 unintentionally shows one of the energy levels of the instance. The material of the ship 1 includes a single carrier charge and the electron transfer can be made of a bipolar, single-component material that jumps 3 bases between the dopant states and in the light-emitting region. 1 ^ 括 F 沾 示意 示意 示意 示意 示意 示意 沾 沾 沾 沾 沾 沾 沾 沾 — 沾 — — — F F F F F F F F F F F F F F F F F F F F F F F F F F Another jump occurs between the other layers of the layer 2 of the ::: the transfer material, the electron transfer material, and the triple emitter dopant. The dashed line again indicates that the horizontal and vertical dashed lines of the 2' ninth diagram of the triplet illuminant dopant indicate the electron transfer level in the layer EML2, the month b, and finally, the solid line in the layer EML2 indicates the hole transmission. The energy level of the component. "The first diagram schematically shows an energy level diagram of an example in which the material (M1) of one of the layers EML1 in the light-emitting region and the other material (M2) of the other layer of the EML 2 in the light-emitting region It consists of a single component, a bipolar material or a mixture of a hole transfer material and an electron transfer material. The transfer material of the layer EML1 and EML2 only shows the energy level important for the transfer; the energy that is not involved in the case of the mixed material The stage is not shown. Fig. 11 is a view schematically showing an energy level diagram of an example in which the materials (M1) and (M2) of the layers EML1 and EML2 in the light-emitting region are transferred to a liquid crystal 21 1285441. The jump between the states of the dopant proceeds, and the HOMO energy level of the matrix material of the material (M1) is closer to the H〇M〇 energy level of the triplet emitter dopant than the other material (M2), The tunneling energy of the jump between the triplet emitter dopant of the material (M1) of EML1 compared to the jumper of the dopant of another material (M2) of EML2 The barrier is small and the effective hole in the material (M1) is more effective than the effective hole in the other material (M2) Mobility is large.

#, The transfer material for the layers EML1 and EML2 shows only the energy levels important for the transfer; the energy levels that are not involved in the case of the mixed materials are not shown. This energy level is arranged similar to the energy levels in the examples corresponding to Figure 6, and now assumes that the difference is in the hole transfer between the doublet emitter dopants in the layer EMU. The transfer system occurs due to a jump between the triplet emitter dopants or as a transfer in a matrix with a dopant as a trap, depending on the dopant concentration and the depth of the trap. The depth is the energy difference between the H〇M〇 level of the substrate and the HOMO level of the Φ dualt emitter dopant. Figure 12 shows an energy level diagram of an example in which electron transport of the material (M1) of the layer EM1 ^ occurs in the light-emitting region and in the light-emitting region: the electron transport mechanism of another material (M2) of the layer EML2 is The jump between the states of the three ▲ heavy emitter dopants, and the LUM〇 energy of the matrix material of the other material (M2) is closer to the triplet emitter dopant than the material (Μι) LUM〇 energy level, such that electron hopping between the triplet emitter dopants of another material (M2) 22 1285441 * Jumping barrier energy barrier between dopants of material (M1) The tunneling period bP is small and the effective electron mobility of the other material (M2) is greater than the effective electron mobility of the material (M1). • _ In Figure 12, the transfer material for this layer of EML1 and EML2 is only an important energy level for transfer; the energy level that is not involved in the case of 纟 mixed material is not shown. The energy levels are arranged in a manner similar to the example of Figure 9 and now differs in that the electron transport in layer EML2 occurs by direct jumps between dopants. Further Examples of Materials A further examples of materials that can be used in the various embodiments described are provided below. In the examples described, the following materials may be used preferentially or uniquely: • Transfer of matrix material in a hole in the illuminating zone: 1) A molecule comprising triarylamine units, in particular TPD, NPD or their spiro-bonding The valence element (spiral linkage is described in the document US Patent No. 5, 84, 217) derivatives of TD's TDΑΤΑ such as m-MTDΑΤΑ, TNANA, etc., or derivatives of TDAB (reference γ Shir〇ta, Journal of Materials Chemistry, 10(1), 1_25 (2000)). : TDAB : * (P17 Figure) Star Radiation = TDAB 1,3,5_Shen (Diphenylamine) Benzene Further aromatic amines are described in U.S. Patent No. 23 1285441 2002/098379 and U.S. Patent No. 6,406,804. 2) - the molecule comprises a porphin unit, and 3) the molecule comprises a phenylene-vinylidene unit. The following ingredients can be used preferentially or uniquely as layers in the luminescent region - EML electron transport matrix materials: • Oxadiazole OXD: (P18) 2) Triazole: TAZ: (P18), 3) Benzosulfonate Azoles (P18) 4) Benzimidazole (P19)

In particular, N-arylbenzimidazole such as TPBI • (P19) 5) Joint bite (P19): 6) - a molecule with a cyanovinyl group (Ref. K. Naito, M. 'Sakurai, S. Egusa , Journal of Physical Chemistry A. 101, 2350 (1997)), especially 7- or 8-cyano-p-phenylene-vinylidene derivatives (P20) 24 1285441 · '· 7) Quinoline (P20) 8 Quinoxaline (cf. M. Redecker, DDC Bradley, M. Jandke, R Strohriegl, Applied Physics Letters, 75(1), • 109-111 (1999)) (P20), 9) Triaryloxyxyl Derivatives (Ref. γ· Shirota, Journal of Materials Chemistry, 10(1), 1-25(2000)) (P21) 10) Silol derivatives 'especially silacyclopentadiene derivatives such as 2,5-bis-(2( '), 2(')bipyridin-6-yl)-1,1-dimethyl-3,4-diphenyl silacyclopentadiene (PyPySPyPy) (P21) or bis(1-methyl-2,3, 4,5-tetraphenyl 8^〇)^1〇卩61^(^1^) Ethane (2PSP) (P22) (Refer to H· Murata, Ζ·Η· Kafafi, M·Uchida, Applied Physics Letters 80(2), 189-191(2002)) U) cyclooctatetraene (Ref. R Lu, Η·Ρ·Hong, GR Cai, p, Djurovich, WP · Weber, METhompson, Journal of Materials Chemistry, 122 (31), 7480-7486 (2000)) 25 : I285441 ' : (P22) 12) 醌-type structure, including thiophene derivatives 13) (P23) • (Reference Ζ·Μ· Zhang, RF· Zhang, F· Wu, YG· Ma, GW·· Li, WJ Tian, JC Shen, Chin Physical Letters • 17(6), 454-456 (2000) )) 14) other heterocyclic compounds having at least one nitrogen or oxygen atom as a hetero atom 15) ketones 16) a metallocene-based radical electron-transporting material, in particular a derivative of pentaarylcyclopentadiene (reference to the United States) Patent 5,811,833) . (P23) 17) Benzosulfide II (Ref. R. Pacios, DDC Bradley, Synthetic Metals, 127(1-3), 261-265 (2002)) (P24) ^ 18 Naphthalene dicarboxylic anhydrides (P24), 19) naphthalene dicarboxy quinones: (P24) • and Cai Erweiwei σ sitting (Ρ25) 20) Perfluoro-low-p-phenyl ( Reference AJ Campbell, DDC Bradley, Anton· Antoniadis, Applied Physics Letters 26:1285441 · " 79(14), 2133-2135(2001)) (P25) Further possible structures that facilitate electron transport Yuan is described in US Patent No. 20002/098379 file. • In a further embodiment of the illuminating assembly, the bipolar, single component material is one of the following material classes: • 1) consisting of a bipolar or electron transfer structure and a bipolar or hole transfer structure A covalently coupled divalent element having an individual 7-inch electronic system. ® This structure has been achieved as a helical bond such as donor unit and acceptor unit (see, for example, German Patent 44 46 818 Al, R. Pudzich, J. Salbeck, Synthetic Metals, 138, 21 (2003) and Τ·Ρ · gi · Saragi, R. Pudzich, T. Fuhrmann, J. Salbeck, Applied Physics Letters 84, 2334 (2004)) The focus of cPudzich and Salbeck's research is the combination of charge carrier delivery and efficient luminescence on a molecule and photosensitivity. The realization of the transistor. The author _ does not mention the use of this compound as a substrate for the phosphorescent emitter dopant, as a result of the good relationship between the electrical energy band and the lowest triplet level. : Bivalent elements including electron conducting and hole conducting structures are also referred to in U.S. Patent No. 6,406,804, which is incorporated herein by reference. 2) - a numerator, as a result of a suitable structural element with a shared 7-turn electronic system, which first includes the advantage of occupying additional holes and the subunits that are concentrated by the HOMO wave function of 27 1285441 and the second including the dominant occupying additional Electrons and thus subunits in which the LOMO wave function is concentrated (see, for example, Y. Shirota, M. Kinoshita, T. Noda, Κ·Okumoto, Τ·Ohara, Journal of the American Chemical Society, 122(44), 11021-11022 (2000) or R. Pudzich, J. Salbeck, Synthetic Metals, 138, 21 (2003)) 〇3) Push-pull replacement of a molecule (a molecule that, as a result of appropriate electron-drawing and electron-donating substituents, predominately occupies additional electricity The holes and thus the subunits in which the HOMO wave function is concentrated and advantageously occupy additional electrons and thus other subunits in which the LOMO wave function is concentrated). 4) A molecule comprising a carbazole unit, in particular cbp. (P27) 5) — A molecule that includes a unit of 芴 (Ref. AJ Campbell, DDC Bradley, Η Antoniadis, Applied Physics Letters 79 (14), 2133-2155 (2001)) 〇 (P27) 6) Molecules including Park Lynn or phthalocyanine units (Ref.

Ioannidis, JP Dodelet, Journal of Physical Chemistry, β· ι〇ι(26), 5100-5107 (1997)) 〇7) — a pair of p-phenyl containing phenyl units with more than three para-doses The molecule. (Ρ28) 8) — A molecule that includes the onion, Ding or Puan units. 28:1285441 ' (P28) 9) A molecule comprising perylene. (P28) 10) — A molecule that includes strontium. - (P29) The features of the invention disclosed above and in the scope of the claims can be used to implement the invention individually or in any combination in its various embodiments. 29:1285441 > BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing current efficiency and power efficiency in a lumen function of a first embodiment of a light-emitting assembly; Fig. 2 is a view showing power using a lumen function of a second embodiment of a light-emitting assembly Figure 3 is a diagram showing power efficiency in a lumen function of a fourth embodiment of the lighting assembly;

Figure 4 shows the divalent element composed of the CBP and TAZ unit of the helically bonded molecule (this molecule is hereinafter referred to as DADs = donor-acceptor bivalent element); Figure 5 shows schematically the following energy The simple material of the level of the phantom adjacent to the redundant electronic system 'b) the subunit of the DAD is given to the body subunit) and the Α (receiving the body 兀) where the energy level of the subunit or

At least one of the energy differences between the LUMO energy levels is small such that the lowest singlet excited state is one of the Frücker excitons of the subunit, and c) the sub-single d d of the DAD and The subunit's enthalpy can be reduced by LUM0 age _ energy money at least - crane big makes the low single stimuli "the electrons of the * money subunit A and the charge transfer excitons composed in the sub soap unit; = 地地显示—a real (four) energy level diagram in which the other element of the other iEML2 including the layer of the bipolar, single-element illuminating region on the axis of the illuminating ancestor EML 1 (Ml) includes a single carrier electron base (4) Transferring the luminescent dopant; the variable line indicates the energy level of the illuminant dopant. 3〇1285441 f schematically shows an example of an energy level diagram in which luminescence:: a layer (EML1) of material _ Hole transfer material '=sub-transfer material and double-light __ : = another layer of ancestors 2) including single load Figure 8 schematically shows an example of the energy level diagram of the layer One of the materials _ includes a single carrier hole, and the medium electron transfer can occur between the dopant states.

= Another material (M2) of another layer EML2 in the illuminating zone comprises a pole, single component material; Fig. 9 is a view schematically showing an energy level diagram of an example in which the material (M1) of the layer EML1 in the light-emitting layer includes a single carrier electric position, wherein electron transfer can occur by jumping between dopant states and emitting light Another material of the other layer of the region EML2 (Μ2) includes a mixture of a hole transporting material, an electron transporting material, and a triplet dopant; and FIG. 10 schematically shows an energy level diagram of an example in which The material (M1) of one of the layers of the region and the other material (1^2) of the other layer of the EML2 in the light-emitting region are each composed of a single-component bipolar material or a mixture including a hole-transporting material and an electron-transporting material. The composition of FIG. 11 schematically shows an energy level diagram of an example in which the material (M1) of the layer EML 1 in the light-emitting region and the other material (M2) of the layer EML·2 in the light-emitting region are transmitted. By the jump between the states of the triplet emitter dopant 31 1285441 (the larger hole mobility of M1 here compared to M2 is due to the smaller energy transfer distance from the hole of the matrix from the energy point of view) Distance, making tunneling between M1 dopant states more Easily performed; and FIG. 12 schematically shows an energy level diagram of an example in which the material (M1) of the layer EML 1 in the light-emitting region and the other material (M2) of the layer EML2 in the light-emitting region are The jump between the states of the triplet emitter dopants (the larger electron mobility of M2 compared to M1 here is due to the smaller distance from the electron transfer energy of the matrix from the energy point of view, resulting in M2 doping Tunneling between the dopant states is easier to perform). Component Symbol Description 60, 61, 62, 63 Arrows

32

Claims (1)

^ 1285441 r —-—~ % Spleen “Month” [Ri Xiu Mo) Original Announcement j X. Application Patent Range: 1. Layer combination of recording components, special collection—the county has a matt triode, which has a Hole injection contact point and an electron injection contact point, .  Each of the wires is connected to a light-emitting region, wherein: - in the light-emitting region, a light-emitting layer is composed of one material (M1); and the other light-emitting layer is composed of another material (M2), wherein The material (M1) is a bipolar and preferentially transmitting hole and the other material (M2) is bipolar and preferentially transports electrons; _ in the illuminating region, a heterogeneous conversion is made by the material (Ml) and the other material (M2) is formed; * _ is an interface between the material (M1) and the other material (M2).  Wrong form Π; - the material (Ml) and the other material (M2) each comprise a suitable addition of one or more triple emitters; and _ from the material (Ml) into the other material (]^ 2) an energy barrier transmitted by the hole, and an energy barrier of electron transfer from the other material (M2) into the material (M1), each less than about 0. 4 electron volts; and at least one of the materials ( ΜΙ : Μ 2) comprises a mixture of a preferential transport hole material, a preferential electron transport material and the triple luminescent body dopant. 2. A layer combination according to claim 1 of the patent application, characterized in that the energy barrier transmitted from the material (Μ1) into the hole of the other material (M2), and/or from the other material (] ^2) The energy barriers for electron transfer into the material (Μ1) are each less than about 〇·3 eV. 33 Ι28544Γ 3.  A layer combination according to claim 2, characterized in that the material (M1) comprises a bipolar, single-component material and the other material (M2) comprises a single-carrier electronic matrix, and the hole transfer can be A jump occurs between the states of the triple emitter dopant. 4.  The layer combination according to claim 1 is characterized in that the material (M1) comprises a bipolar, single component material and the other material (M2) comprises a single carrier electronic matrix, and the hole transfer can be A jump occurs between the states of the triple emitter dopant. 5.  The layer combination according to claim 1 of the patent application, characterized in that the other material (M2) comprises a single carrier electron matrix, and the hole transfer can be caused by a jump between the states of the triple emitter dopant occur. 6.  A layer combination according to claim 2, characterized in that the further material (M2) comprises a single carrier electron matrix and the hole transfer 'capable of jumping between the states of the triple emitter dopant And it happened. 7.  The layer combination according to claim 1, wherein the material (M1) comprises a single carrier hole matrix, and electron transfer can occur by a jump between states of the triple emitter dopant. And the other material (M2) comprises a bipolar, single component material. 8.  A layer combination according to claim 2, characterized in that the material (M1) comprises a single carrier hole matrix, and electron transfer can occur by a jump between states of the triple emitter dopant, And the other material (M2) comprises a bipolar, single component material. 34 1285441 9. A layer combination according to the first aspect of the patent application, characterized in that the material (M1) comprises a single carrier hole matrix, and electron transfer can occur by a jump between states of the one light emitter dopant, And the other material (M2) comprises a preferential hole transport material, a preferential electron transport material, and a mixture of the triplet emitter dopants. 10. A layer combination according to claim 2, characterized in that the material (M1) comprises a single carrier cavity matrix and the electron transfer can be caused by a jump between the states of the triple emitter dopant What happens, and the other material (M2) comprises a preferential hole transport material, a preferential electron transport material, and a mixture of the three 4-state emitter dopants. 11. The layer combination according to item i of the patent application is characterized in that the material (M1) and the other material (M2) are each composed of a single component, a bipolar material or a preferential hole transfer material and a priority. A mixture of electrical conductivity materials. 12. A layer combination according to the scope of the patent application, characterized in that the light-emitting layer composed of the material (M1) and the other light-emitting layer composed of the other material (M2) are each preferentially The hole transfer material* is composed of a county electron transfer material and a phase U compound of the triplet emitter dopant, and the light-emitting layer is preferentially made into a hole transfer and the other is changed by the change of the mixture ratio A luminescent layer is preferentially made for electron transfer. 13· According to the application of patent scope #12 layer combination, its characteristics are 35. 1285441 The priority hole transfer property in the two-dimensional correction domain and the smooth transition between the priority = sub-transfer properties are generated by a mixture ratio gradient. According to the patent application, the layer combination of item 2 is characterized in that = material (Ml) and the other material_each consist of a single component, a bipolar material or a crucible containing - priority hole transfer material and - priority A mixture of electronic delivery materials. 15. The layer combination according to item 14 of the scope of the patent application is characterized in that the light-emitting layer composed of the material (M1) and the other material (M2: jin, and the other-light-emitting layer are each--priority The hole-transporting material, a preferential electron-transporting material, and the same mixture of the triplet emitter dopants are formed, and the light-emitting layer is lost as a hole transfer and the other is changed by the change of the mixture ratio - The luminescent layer is preferentially made for electron transfer. !6. The layer combination according to the ls item of the patent application is characterized in that the preferential hole transfer property of π in the light-emitting region and the smooth transition of the preferential electron transport property (4) are generated by a _mixing ratio gradient. 17. The layer combination according to the scope of the patent application, characterized in that the hole transfer in the material (Μ1) and the other material (M 2) is in the state of the triplet emitter dopant The jump occurs between the material and the H〇M〇 energy of a matrix material in the material (M1) is closer to the h〇m〇 energy level of the triplet emitter dopant than the other material (M2). a tunneling energy barrier that causes a jump between states of the triplet emitter dopant 36 1585441 in the material (M1), compared to the triplet emitter dopant in the other material (M2) The tunneling energy barrier of the jump between states is small, and the mobility of the hole in the material (M1) is larger than that of the hole in the other material (M2). 18. The layer combination according to claim 2, wherein the hole transfer in the material (M1) and the other material (m2) is between the states of the triplet emitter dopant The jump occurs, and the H〇M〇 energy level of a matrix material in the material (Μ 1) is closer to the h〇m〇 energy level of the triplet emitter dopant than the other material (M2). a tunneling energy barrier that causes a jump between states of the triplet emitter dopant in the material (M1), compared to the state of the double sad emitter dopant in the other material The gap between the wear and the wear barrier is small, and the hole mobility in the material (M1) is greater than the hole mobility in the other material (M2). 19· According to the scope of the patent application! A layer combination of the item, characterized in that the electron transport in the two materials (M1) and (M2) occurs with a jump between the states of the triplet emitter dopant, and in the other material (M2) The LUM〇 energy level of the medium-matrix material is closer to the LUMO energy level of the triplet emitter dopant than the material (Μι), such that in the other material (M2) A tunneling energy barrier of electron hopping between states of the heavy illuminant dopant is smaller than a tunneling energy barrier of a jump between states of the doublet illuminant dopant in the material (M1), and In the other material (M2), the electron mobility is larger than that in the material (M1). 37 128544Γ 20. A layer combination according to claim 2, characterized in that in the two materials and (10)), electron transport occurs in a jump between states of the triplet emitter dopant, and in the other material The LUM() energy of the (M2)-substrate material is closer to the LUM〇 energy level of the doublet emitter dopant than the material (μι), such that the triplet state in the further material (M2) a tunneling energy barrier of electron hopping between states of the illuminant dopant is smaller than a tunneling energy barrier of the jump between the states of the sinister illuminant dopant in the material (M1), and In the other material (M2), the electron mobility is larger than the electron mobility in the material (M1). 21. The layer combination according to claim </ RTI> wherein the material (M1) and/or the matrix material of the other material (M2) comprises a bipolar or electron transfer structure and a bipolar Or a covalently coupled divalent element of the hole transfer structure, and the divalent element comprises a subunit having an individual germanium electron system. A layer combination according to claim 21, wherein one of the subunits of the divalent element preferentially occupies an additional hole such that a HOMO wave function is concentrated on the sub The one subunit of the unit, and the other of the subunits of the divalent element may preferentially be extra electrons such that the LUMO wave function is concentrated on the other subunit of the subunits, thereby forming an Body-receiver bivalent element. 23. A layer combination according to claim 22, wherein the sub-unit that preferentially occupies additional holes comprises one or more 38 1285441 materials of the following material classes: - a molecule comprising a tri-aryl group Amine units, in particular TPD, NPD and their spiro-bonded derivatives of divalent elements, derivatives of TDATA, such as meta-MTD, TNANA, etc., or derivatives of TDAB; a molecule of a phenanthrene unit; and/or a molecule comprising a phenylene-vinylidene unit. twenty four.  The layer combination according to claim 21, wherein at least one of the energy offsets between the HOMO energy levels or the LUMO energy levels of the subunits is small, preferably less than about zero. 5 eV, such that the lowest singlet excited state is a Flenkeler exciton of one of the subunits. 25.  The layer combination according to claim 21, wherein the energy offset of the HOMO energy level or the LUMO energy level of the subunits is large, and is greater than about 0. 4 electron volts such that the lowest singlet excited state is a charge transfer exciter consisting of an electron in a receiving subunit and a hole in a donor subunit. 26.  A layer combination according to claim 22, characterized in that the other subunit occupies preferentially occupies additional electrons comprises one or more materials of the following material classes: - scorpion di-salt; - triazoles; 1285441 - benzothiadiazoles; _ benzimidazoles, especially N-aryl benzimidazoles, such as TPBI; - bipyridyls; - molecules with cyanovinyl groups, especially 7- or 8- a cyano-p-phenylene-vinylidene derivative; a guanine; a quinoxaline; a triaryl borohydride derivative; a silol derivative, especially a silacyclopentadiene derivative, such as 2,5-bis- (2('), 2(')-linked 11 to 唆-6_yl)·1,1-dimercapto-3,4·diphenyl silacyclopentadiene or 1,2-bis(1_ fluorenyl-2, 3,4,5-tetraphenyl 3丨1&amp;.&gt;^1(^61^&amp;(^1^) Ethylene; -cyclooctatetraene; -醌-type structure; Ketones; - metallocene-based radical electron-transport materials, especially derivatives of pentaarylcyclopentadiene; - benzothiazepines, -naphthalene dicarboxylic anhydrides, naphthalene dicarboxy quinones and naphthalenes Dicarboxyimidazoles; -Perfluoro-low-p-benzene Class; - Κ · Naito, Μ · Sakurai, S · Egusa, Journal of Physical Chemistry Α · 101,2350 (1997) from a material; and - from L. S· Hung, C. H· Chen Materials Science Engineering Report 39, 1285441 143-222 (2002). 27.  The layer combination according to any one of claims 21, wherein the subunit of the divalent element is bonded by a helical compound. 28.  The layer combination according to the first aspect of the patent application is characterized in that a needle-like structure is formed. 29.  The layer combination according to item 1 of the patent application is characterized in that a p-i-i structure is formed. 30.  The layer combination according to claim 1 of the patent application is characterized in that an i-i-n structure is formed. 31.  The layer combination according to any one of claims 5, 6, 9, 10, 11 and 14 wherein the preferential hole transporting material, the preferential electron transporting material, and the triplet emitter dopant The mixture contains one or more materials of the following material classes as the preferred hole transfer component: - a molecule comprising triarylamine units, in particular TPD, NPD and their spiro-bonded derivatives of divalent elements a derivative of TDATA, such as _MTDATA, TNANA, etc., or a derivative of TDAB; - a molecule comprising a porphin unit; and/or - a molecule comprising a phenylene-vinylidene unit. 32.  The layer combination according to any one of claims 5, 6, 9, 10, 11 and 14 wherein the preferential hole transporting material, the preferential electron transporting material, and the triplet emitter dopant The mixture of 41 1285441 contains one or more of the following material classes as the preferred electron transport component: - Ethylene; - Triazoles; - Benzothiadiazoles; - Benzimidazoles, especially N- Aryl benzimidazoles, such as TPBI; -bipyridyls; - molecules having a cyanovinyl group, especially 7- or 8-cyano-p-phenylene-vinylene derivatives; - quinolone; - hydrazine a triaryl borohydride derivative; a silol derivative, especially a silacyclopentadiene derivative, such as 2,5-bis-(2('), 2(') _ ̄ ° ° bit -6 yl )-1,1_dimercapto-3,4-diphenyl silacyclopentadiene or 1,2-bis(1-indenyl-2,3,4,5-tetraphenyl 311&amp;〇}^1〇卩61 ^&amp;(^1]^) Ethylene; -cyclooctatetraene; - quinoid structure; specific salicin; - ketone; - thiol-based radical electron transport material, especially pentaarylcyclopentan a derivative of a diene; - benzothiazepines, -naphthalene dicarboxylic anhydrides, naphthalene dicarboxy phthalimides and naphthalene dicarboxyimidazoles; 42 1285441 - perfluorolow-p-phenyls; from K· Naito, M · Sakurai, S. Egusa, Journal of Physical Chemistry Α 101, 2350 (1997); and • from L. S· Hung, C. H· Chen Materials Science Engineering Report 39, 143-222 (2002). 33, the level combination of any of the 3, 4, 7, 8, and nA14 patents of the patent application scope is characterized by the bipolar, single-component material; one of the following material categories: surname; I# double a pole or electron transfer structure and a bipolar or hole transfer, a co-combined divalent element of the =, and the substructure has an individual enthalpy system; the knives are configured as a suitable diagnosis with a shared 7 Γ electronic system The result of the prime, including the advantage of occupying the Euclidean hole and thus the first subunit of the wave function, and including the additional sub-units based on the additional electrons and thus the LUM chopping function; _~ push-pull substituted molecule; , ~ a molecule comprising a carbazole unit, especially CBp; • a molecule comprising a ruthenium unit; a molecule comprising a porphyrin or phthalocyanine unit; the species comprising more than three couplings The phenyl unit in the para position is a molecule of a lower phenyl group; a molecule comprising a unit of onion, butyl or pentad; a molecule comprising a benzene group; and 43 1285441 - a molecule comprising a group. 34.  The layer combination according to item 1 of the patent application is characterized in that each of the light-emitting layer and the other light-emitting layer has a layer thickness of less than about 3 Å. 35.  A layer combination according to the first aspect of the patent application, characterized in that at least one additional luminescent layer is present in the illuminating region. 36.  The layer combination according to claim 1 is characterized in that one or all of the following layers are present one or more times outside the light-emitting region between the hole injection contact point and the electron injection contact point: an electron transport layer , a hole transfer layer, an electron barrier layer and a hole barrier layer. 37.  The layer combination according to claim 36 of the patent application, characterized in that the hole injection energy barrier of the effective hole transfer energy level from an effective hole transfer energy level of the other light-emitting layer into an adjacent electron transport layer is less than About 0. 4 electron volts such that the adjacent electron transport layer is an ineffective hole barrier layer. 38.  The layer combination according to claim 36, wherein an electron injection energy barrier from an effective electron transfer energy of the light-emitting layer to an effective electron transport energy of an adjacent hole transport layer is less than about 0. 4 electron volts, making the adjacent hole transfer layer an ineffective electron barrier layer. 39.  The layer combination according to claim 1 is characterized in that the Ρ-doped hole transmission layer is present, and a layer region between the Ρ-doped hole transmission layer and the illuminating region does not contain one Or 44 ^ 1285441 more undoped intermediate layer. 4. A layer combination according to item 1 of the scope of the patent application, characterized in that the light-emitting region is directly adjacent to the hole injection contact point. 41. The layer combination according to claim 1, wherein the η-doped electron transport layer is present, and the layer region between the n•doped electron transport layer and the light emitting region does not comprise a layer Or more undoped intermediate layers. 42. A layer combination according to claim 1 of the patent application, characterized in that the further luminescent layer is directly adjacent to the electron injection contact point. 43. A light-emitting component characterized by a layer combination according to any one of claims ii to 42. 44. A layer combination of a light-emitting component, in particular a scale organic light-emitting diode having a hole injection contact point and an electron injection contact point, each connected to a light-emitting region, wherein: - the light is emitted In the region, the first layer is composed of one material (Mi) and the other layer is composed of another material (M2), wherein the material (M1) is a bipolar and preferentially transporting holes and the other material (M2) is a bipolar and preferentially transmitting electrons; - in the illuminating region, a heterogeneous conversion is formed by the material (M1) and the other material (M2); - in the material (Ml) and the other An interface between materials (M2) is a staggered form II; _ the material (Ml) and the other material (M2) each comprise a suitable addition of one or more triple emitter dopants; and 45. 1285441 - an energy barrier transmitted from the material (Ml) into the hole of the other material (M2), and an energy barrier from the electron transfer of the other material (M2) into the material (M1), each smaller than约··4 eV; = at least one material comprising a bipolar or electron transfer = covalently coupled divalent element and a bipolar or hole transfer structure and the bivalent element comprising individual 7 Γ electrons A subunit of the system. According to the layer combination of claim 44 of the patent scope, it is characterized in that the second material (M1) enters the hole of the other material (M2) and passes through the second material and/or enters from the other material (M2). The material (Ml) is a layer combination of the material (a), characterized in that the material (10)), the component material, and the other device occur according to a jump between states of the dopant. Material (10) component material and the other 48. Occurs according to the jump between the T-states of the application. The transfer material, and the triplet/miscellaneous material, preferentially transfer energy occurs approximately from the jump between the states of the w sub-electron matrices and the holes &quot;light body dopants 46 1285441. 49.  A layer combination according to claim 45, wherein the material (M1) comprises a preferential hole transporting material, a preferential electron transporting material, and a mixture of the triplet emitter dopant, and the other material (M2) includes a single carrier electron matrix, and hole transfer can occur by a jump between the states of the triple emitter dopant. 50.  A layer combination according to claim 44, wherein the material (M1) comprises a single carrier hole matrix, and electron transfer can occur by a jump between states of the triple emitter dopant, And the other material (M2) comprises a bipolar, single component material. 51.  A layer combination according to claim 45, wherein the material (M1) comprises a single carrier hole matrix, and electron transfer can occur by a jump between states of the triple emitter dopant, And the other material (M2) comprises a bipolar, single component material. 52.  A layer combination according to claim 44, wherein the material (M1) comprises a single carrier hole matrix, and electron transfer can occur by a jump between states of the triple emitter dopant, And the other material (M2) comprises a preferential hole transport material, a preferential electron transport material, and a mixture of the triplet emitter dopants. 53.  A layer combination according to claim 45, wherein the material (M1) comprises a single carrier hole matrix, and the electron transfer can be caused by a jump between the states of the triple emitter dopant. Occurs, and the further material (M2) comprises a preferential hole transport material, a preferential electron transport material, and a mixture of the triplet emitter dopants. 54. The layer combination according to claim 44, wherein the material (M1) and the other material (M2) are each composed of a single component, a bipolar material or a preferential hole transfer material and a A mixture of preferential electron transport materials. 55. The layer combination according to claim 46, wherein the light-emitting layer composed of the material (M1) and the other light-emitting layer composed of the other material (M2) each have a priority hole a transfer material, a preferential electron transport material, and the same mixture of the triplet emitter dopants, and the light-emitting layer is preferentially made into a hole transfer and the other light-emitting layer is preferentially formed by the change of the mixture ratio Become an electronic delivery. 56. A layer combination according to claim 47, wherein the preferential hole transfer property in the light-emitting region and the smooth transition between the preferential electron transport properties are produced by a mixture ratio gradient. 57.  The layer combination according to claim 45, wherein the material (M1) and the other material (M2) are each composed of a single component, a bipolar material or a preferential hole transfer material and a preferential electron. Composed of a mixture of materials. 58.  The layer combination according to claim 57, wherein the light-emitting layer composed of the material (M1) and the other light-emitting layer composed of the other material 48 1285441 (M2) each have a priority hole a transfer material, a preferential electron transport material, and the same mixture of the triplet emitter dopants, and the light-emitting layer is preferentially made into a hole transfer and the other light-emitting layer is preferentially formed by the change of the mixture ratio Become an electronic delivery. 59. The layer combination of claim 58 wherein the preferential hole transfer property in the light-emitting region and the smooth transition between the preferential electron transfer properties are produced by a mixture ratio gradient. 60. The layer combination according to claim 44, wherein the hole transfer in the material (M1) and the other material (M2) is between the states of the triplet emitter dopant The jump occurs, and the H0M0 energy level of a matrix material in the material (M1) is closer to the HOMO energy level of the triplet emitter dopant than the other material (M2), such that the material (mi) a tunneling energy barrier of a jump between states of the triplet emitter dopant, a tunneling barrier of a jump between states of the triplet emitter dopant in the other material (M2) It is small, and the hole mobility in the material (Ml) is larger than the hole mobility in the other material (M2). 61. The layer combination according to claim 45, wherein the hole transfer in the material (M1) and the other material (M2) is between the states of the triplet emitter dopant The jump occurs, and the HOMO energy level of a matrix material in the material (M1) is closer to the HOMO energy level of the triplet emitter dopant 49 1285441 than the other material (M2), such that the material (M1) a tunneling energy barrier of the jump between the states of the triplet emitter dopant, compared to the jump between the states of the triplet emitter dopant in the other material (M2) The tunneling barrier is small, and the mobility of the hole in the material (Ml) is greater than the mobility of the hole in the other material (M2). 62. The layer combination according to claim 44, wherein the electron transport system in the two materials (M1) and (M2) occurs with a jump between states of the triplet emitter dopant, and In the other material (M2), the LUMO energy level of a matrix material is closer to the LUMO energy level of the triplet emitter dopant than the material (M1), such that in the other material (M2) A pass-through barrier of electron hopping between the states of the triplet emitter dopant is smaller than a tunneling barrier of the jump between the states of the triplet emitter dopant in the material (M1). And in the other material (M2), the electron mobility is greater than the electron mobility in the material (M1): 63. The layer combination according to claim 45, wherein the electron transport in the two materials (M1) and (M2) occurs with a jump between states of the triplet emitter dopant, and In the other material (M2), the LUMO energy level of a matrix material is closer to the LUMO energy level of the double luminescent emitter dopant than the material (M1), so that in the other material (M2) a tunneling energy barrier of the electron hopping between the states of the triplet illuminant dopant is smaller than a jump-energy barrier between the states of the triplet illuminant dopant in the material (M1) And the electron mobility in the other material (M2) is larger than that in the material (Ml) of 50 1285441. 64. A layer combination according to claim 44, characterized in that the material (M1) and/or a matrix material of the other material (m2), one comprising a bipolar or electron transfer structure and a bipolar Or a hole in the hole =^ structure of the covalently bonded divalent element, and the divalent element includes a subunit of the electronic system of the ear. The combination of layers according to claim 64 of the patent application is characterized in that one of the subunits of the divalent element preferentially occupies additional holes such that a HOMO wave function is concentrated on the a subunit of the subunit, and the other two of the subunits of the divalent element preferentially occupy additional electrons such that the LUMO wave function concentrates on the other subunit of the subunit of Z, thereby forming an Body_receives a § element. ~ 66· According to the layer combination of claim 65, the rise-up is that the sub-unit that preferentially occupies the extra hole includes the material of the following material categories: 夕_one molecule, which includes the triaryl group Amine units, in particular TpD NPD and their spiro-bonded derivatives of divalent elements, derivatives of tdata, such as meta-MTDATA, TNANA, etc., or derivatives of TDAB; - a molecule comprising thiophene units; / or - a molecule comprising a phenylene-vinylidene unit. 67. A layer combination according to claim 64, wherein at least one of the energy offsets of the 51 1285441 between the HOMO energy level or the LUMO energy level of the subunits is small, preferably less than about 0. 5 eV, such that the lowest singlet excited state is a Flenkeler exciton of one of the subunits. 68.  The layer combination according to item 64 of the patent application is characterized in that the energy offset of the HOMO energy level or the LUMO energy level of the subunits is large, preferably greater than about 0. 4 electron volts such that the lowest singlet excited state is a charge transfer exciter consisting of an electron in a receiving subunit and a hole in a donor subunit. 69.  The layer combination according to claim 65, wherein the other subunit preferentially occupies additional electrons comprises one or more materials of the following material categories: noisy class; triazoles; Thiodiazoles; ;: -benzimidazoles, especially N-arylbenzimidazoles, such as TPBI; - conjugated bites; - molecules with cyanovinyl groups, especially 7- or 8-cyano a base-p-phenylene-vinylidene derivative; a guanidine type; a guanidine type; a triaryl borohydride derivative; a silol derivative, particularly a silacyclopentadiene derivative such as 2,5-bis-( 2('),2(6)-biacridin-6-yl)-1,1_didecyl-3,4- 52 1285441 diphenyl silacyclopentadiene or 1, 厶 double q: A-2,3 , 4,5_tetraphenyl siiaCyCi〇pentadiene) cyclooctatetetraenes; quinoid structures; pyrazolines; ketones; especially pentaarylcyclopentyl base free radical electron transport materials, Derivatives; Benzothione; Naphthalenes, naphthalenes and n-salt perfluoro-low-p-phenyls; 付目 iNaito, 70.  71.  72.  73· Recognize 1, 〇·死 g Α· 101’2350 (1997) materials; and . From L. S. HUng, C. H. Chen Materials 143-222 (2002) materials. According to any of the 64th items of the patent application, 1_+ is characterized in that the sub-component of the monovalent element is bonded. 4 Early from the 耩 by a 勒 according to the scope of patent application 44, forming a needle-like structure. According to the scope of the patent application, a p-i-i structure is formed. According to the scope of the patent application, an H-n structure is formed. "Susa, the physicochemical period, the layer combination of the terms, characterized by a layer combination of the terms, characterized by a layer combination of the items, characterized by 53 1285441 74. According to the patent application scopes 48, 49, 52, 53, 54 and The layer combination of any one of clause 57, wherein the preferential hole transport material, the preferential electron transport material, and the mixture of the triplet emitter dopants comprise one or more materials of the following material classes as a priority Hole transfer component: - a molecule comprising a triarylamine unit, in particular a TPD, NPD and a derivative of their spiro-bonded divalent element, a derivative of TDATA, such as meta-MTDATA, hydrazine, etc., or Is a derivative of TDAB; - a molecule comprising a porphin unit; and / or - a molecule comprising a phenylene-vinylidene unit. A layer combination according to any one of claims 48, 49, 52, 53, 54 and 57, characterized in that the priority hole transfer material, the preferential electron transport material and the triplet emitter dopant are The mixture contains one or more of the following material classes as the preferred electron transport component: - oxadiazoles; - triazoles; - benzothiadiazoles; benzimidazoles, especially ruthenium-arylbenzenes And imidazole, such as hydrazine; -bipyridyl; - a molecule having a cyanovinyl group, especially a 7- or 8-cyano-p-phenylene-vinylene derivative; - 啥琳; 54 1285441 - quetia a quinone; a triaryl borohydride derivative; a silol derivative, particularly a silacyclopentadiene derivative, such as 2,5-bis-(2('), 2 (&gt; hydrazin-6-yl)-1 , 1-dimercapto-3,4-diphenyl silacyclopentadiene or 1,2-bis(1-methyl-2,3,4,5·tetraphenyl silacyclopentadiene) ethene; -cyclooctatetraene; - 酉Kun type structure class; - mouth than Junlin class; - ketones; - metallocene base radical electron transport materials, especially pentaaryl cyclopentadiene derivatives; benzene Thiadiazoles; -naphthalene dicarboxylic anhydrides, naphthalene dicarboxy phthalimides and naphthalene dicarboxyimidazoles; naperfluoro-low pairs, phenyls; - from K· Naito, M· Sakurai, S· Egusa, Journal of Physical Chemistry Α 101, 2350 (1997); and from L. S· Hung, C. H· Chen Materials Science Engineering Report 39, 143-222 (2002). The layer combination according to any one of claims 46, 47, 50, 51, 54 and 57, wherein the bipolar, single component material belongs to one of the following material categories: - including one A bipolar or electron transfer structure and a bivalent element of a bipolar or hole transfer structure covalently coupled, and the substructure has an individual 55 乜 85541 7 Γ electronic system; a knives' as a suitable 7 Γ electronic system The result of the structure eigenin 'which includes the first subunit that advantageously occupies the extra hole and thus the HOMO wave function is concentrated, and includes a second additional subunit that preferentially occupies additional electrons and thus the LUM chopping function is concentrated • a push-pull replacement molecule; _ a molecule comprising a carbazole unit, in particular CBP; - a molecule comprising a fluorene unit; - a molecule comprising a Parkin or phthalocyanine unit; - a coupling comprising more than three a p-low phenyl molecule of the phenyl unit in the para position; a molecule comprising a unit of onion, butyl or pentacene; a molecule comprising perylene; and a Child. The layer combination according to claim 44, wherein each of the light-emitting layer and the other light-emitting layer has a layer thickness of less than about 30 nm. 78. A layer combination according to claim 44, wherein at least one additional luminescent layer is present in the illuminating region. 79. The layer combination according to claim 44, wherein one or all of the following layers are present one or more times outside the light-emitting region between the hole injection contact point and the electron injection contact point: an electron The transfer layer, a hole transfer layer, an electron barrier 56 Γ 285441 layer and a hole barrier layer. 80.  The layer combination according to claim 79, characterized in that the hole injection energy barrier of the effective hole transfer energy from an effective hole of the other light-emitting layer into an adjacent electron transport layer is less than About 0. 4 electron volts, making the adjacent electron transport layer an ineffective hole barrier layer. 81.  The layer combination according to claim 79, wherein the electron injection energy from an effective electron transfer energy level of the light-emitting layer to an effective electron transport energy level of the adjacent hole transport layer is less than about 0. 4 electron volts, making the adjacent hole transfer layer an ineffective electron barrier layer. 82.  The layer combination according to claim 44, wherein the P-doped hole transmission layer is present, and a layer region between the p-doped hole transmission layer and the light-emitting region does not contain one Or more undoped intermediate layers. 83.  The layer combination according to item 44 of the patent application is characterized in that the light-emitting region is directly adjacent to the hole injection contact point. 84.  The layer combination according to claim 44, wherein the η-doped electron transport layer is present, and the layer region between the η-doped electron transport layer and the light-emitting region does not contain one or more Multiple undoped intermediate layers. 85.  The layer combination according to item 44 of the patent application is characterized in that the other luminescent layer is directly adjacent to the electron injecting contact point. 86.  A light-emitting component, characterized by a layer combination according to any one of the claims of the invention, in the scope of the invention. 58