JP2010267955A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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- JP2010267955A JP2010267955A JP2010092187A JP2010092187A JP2010267955A JP 2010267955 A JP2010267955 A JP 2010267955A JP 2010092187 A JP2010092187 A JP 2010092187A JP 2010092187 A JP2010092187 A JP 2010092187A JP 2010267955 A JP2010267955 A JP 2010267955A
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- oxide
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- oxide semiconductor
- transistor
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- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】Znを含む酸化物層を用いたトランジスタにおいて、酸化物層の上に絶縁性酸化物を含む酸化物半導体層を積層し、酸化物層とソース電極層又はドレイン電極層とが絶縁性酸化物を含む酸化物半導体層を介して接触するようにトランジスタを形成することによって、トランジスタのしきい値電圧のばらつきを低減し、電気特性を安定させることができる。
【選択図】図1
Description
本実施の形態では、トランジスタの構造について、図1を用いて説明する。
本実施の形態では、実施の形態1で示したトランジスタを含む表示装置の作製工程について、図2乃至図9を用いて説明する。図2と図3は断面図で、図4乃至図8は平面図となっており、図4乃至図8の線A1−A2及び線B1−B2は、図2及び図3の断面図の線A1−A2、線B1−B2に対応している。
本実施の形態では、実施の形態1で示したトランジスタとは異なる形状のトランジスタについて図31を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態3に示したトランジスタとは異なる形状のトランジスタについて図35(A)乃至図35(C)を用いて説明する。
本実施の形態では、実施の形態1で示したボトムゲート型トランジスタを2つ用いたインバータ回路について図13を用いて説明する。
本実施の形態では、半導体装置の一例である表示装置において、少なくとも駆動回路の一部及び画素部に配置するトランジスタを同一基板上に作製する例について以下に説明する。
実施の形態1乃至実施の形態4に示すトランジスタを作製し、該トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、実施の形態1乃至実施の形態4に示すトランジスタを用いて駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
(実施の形態8)
本実施の形態では、実施の形態1乃至実施の形態4に示すトランジスタを適用した半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
実施の形態1乃至実施の形態4に示すトランジスタを適用した半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図26、図27に示す。
実施の形態1乃至実施の形態4に示すトランジスタを用いた半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
101 ゲート電極層
102 ゲート絶縁層
103 絶縁性酸化物を含む酸化物半導体層
103a 第1の絶縁性酸化物を含む酸化物半導体層
103b 第2の絶縁性酸化物を含む酸化物半導体層
105a ソース電極層
105b ドレイン電極層
106 酸化物層
107 保護絶縁層
108 容量配線
110 画素電極層
111 絶縁性酸化物を含む酸化物半導体層
112 導電膜
113 酸化物膜
114 絶縁性酸化物を含む酸化物半導体膜
115 導電層
120 接続電極
121 端子
122 端子
124 端子
125 コンタクトホール
126 コンタクトホール
127 コンタクトホール
128 透明導電膜
129 透明導電膜
131 レジストマスク
132 レジストマスク
133 樹脂層
150 端子
151 端子
152 ゲート絶縁層
153 接続電極
154 保護絶縁層
155 透明導電膜
156 電極
170 トランジスタ
201 ゲート電極層
210 空洞
223 絶縁性酸化物を含む酸化物半導体層
226 酸化物層
250 亜鉛原子(Zn)
251 酸素原子(O)
301a バッファ層
302 酸化物半導体膜
313 絶縁性酸化物を含む酸化物半導体層
316 酸化物層
400 基板
401a 第1のゲート電極層
401b 第2のゲート電極層
402 ゲート絶縁層
403a 第1の絶縁性酸化物を含む酸化物半導体層
403b 第2の絶縁性酸化物を含む酸化物半導体層
414 コンタクトホール
405a 第1配線
405b 第2配線
405c 第3配線
406a 第1の酸化物層
406b 第2の酸化物層
430a 第1のトランジスタ
430b 第2のトランジスタ
580 基板
596 基板
581 トランジスタ
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
601 ゲート電極層
602 ゲート絶縁層
605a ソース電極層
605b ドレイン電極層
606 酸化物半導体層
613 絶縁性酸化物を含む酸化物半導体層
616 酸化物半導体層
623 絶縁性酸化物を含む酸化物半導体層
626 酸化物半導体層
1000 携帯電話機
1001 筐体
1002 表示部
1003 操作ボタン
1004 外部接続ポート
1005 スピーカ
1006 マイク
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2631 ポスター
2632 車内広告
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4501 基板
4502 画素部
4503a 信号線駆動回路
4503b 信号線駆動回路
4504a 走査線駆動回路
4504b 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 トランジスタ
4510 トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4519 異方性導電膜
4520 隔壁
5300 基板
5301 画素部
5302 走査線駆動回路
5303 信号線駆動回路
5400 基板
5401 画素部
5402 走査線駆動回路
5403 信号線駆動回路
5404 走査線駆動回路
5501 配線
5502 配線
5503 配線
5504 配線
5505 配線
5506 配線
5543 ノード
5544 ノード
5571 第1のトランジスタ
5572 第2のトランジスタ
5573 第3のトランジスタ
5574 第4のトランジスタ
5575 第5のトランジスタ
5576 第6のトランジスタ
5577 第7のトランジスタ
5578 第8のトランジスタ
5601 ドライバIC
5602 スイッチ群
5603a 第1のトランジスタ
5603b 第2のトランジスタ
5603c 第3のトランジスタ
5611 配線
5612 配線
5613 配線
5621 配線
5701 フリップフロップ
5703a タイミング
5703b タイミング
5703c タイミング
5711 配線
5712 配線
5713 配線
5714 配線
5715 配線
5716 配線
5717 配線
5721 信号
5803a タイミング
5803b タイミング
5803c タイミング
5821 信号
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 TFT
7002 発光素子
7003 陰極
7004 発光層
7005 陽極
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 発光層
7015 陽極
7016 遮蔽膜
7017 導電膜
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 発光層
7025 陽極
7027 導電膜
9400 通信装置
9401 筐体
9402 操作ボタン
9403 外部入力端子
9404 マイク
9405 スピーカ
9406 発光部
9410 表示装置
9411 筐体
9412 表示部
9413 操作ボタン
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 入力手段(操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (24)
- ゲート電極層と、前記ゲート電極層上にゲート絶縁層と、前記ゲート絶縁層上に酸化物層と、前記酸化物層上に絶縁性酸化物を含む酸化物半導体層と、前記絶縁性酸化物を含む酸化物半導体層上にソース電極層及びドレイン電極層とを有し、
前記酸化物層及び前記絶縁性酸化物を含む酸化物半導体層は、Znを含み、
前記酸化物層及び前記絶縁性酸化物を含む酸化物半導体層は、インジウムを含まず、
前記絶縁性酸化物を含む酸化物半導体層は、前記酸化物層より導電率が低いアモルファス構造であり、
前記絶縁性酸化物を含む酸化物半導体層と前記ソース電極層及び前記ドレイン電極層とは電気的に接続することを特徴とする半導体装置。 - ゲート電極層と、前記ゲート電極層上にゲート絶縁層と、前記ゲート絶縁層上に酸化物層と、前記酸化物層上に絶縁性酸化物を含む酸化物半導体層と、前記絶縁性酸化物を含む酸化物半導体層上にn型の導電型を有するバッファ層と、前記バッファ層上にソース電極層及びドレイン電極層とを有し、
前記酸化物層及び前記絶縁性酸化物を含む酸化物半導体層は、Znを含み、
前記酸化物層及び前記絶縁性酸化物を含む酸化物半導体層は、インジウムを含まず、
前記絶縁性酸化物を含む酸化物半導体層は、前記酸化物層より導電率が低いアモルファス構造であり、
前記バッファ層の導電率は、前記絶縁性酸化物を含む酸化物半導体層の導電率より高く、
前記絶縁性酸化物を含む酸化物半導体層と前記ソース電極層及び前記ドレイン電極層とは前記バッファ層を介して電気的に接続することを特徴とする半導体装置。 - 請求項2において、
前記バッファ層は、Znを含む酸化物半導体からなることを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記絶縁性酸化物は、酸化シリコンであることを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項において、
前記絶縁性酸化物を含む酸化物半導体層は、SiO2を2.5重量パーセント以上20重量パーセント以下含ませたターゲットを用いたスパッタ法により形成されることを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項において、
前記絶縁性酸化物を含む酸化物半導体層は、SiO2を7.5重量パーセント以上12.5重量パーセント以下含ませたターゲットを用いたスパッタ法により形成されることを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一項において、
前記酸化物層は、酸化物半導体層であることを特徴とする半導体装置。 - 請求項1乃至請求項7のいずれか一項において、
前記酸化物層は、多結晶構造であることを特徴とする半導体装置。 - 請求項1乃至請求項8のいずれか一項において、
前記絶縁性酸化物を含む酸化物半導体層は、前記ソース電極層と前記ドレイン電極層の間に、前記ソース電極層及び前記ドレイン電極層と重なる領域よりも膜厚の薄い領域を有することを特徴とする半導体装置。 - 請求項1乃至請求項9のいずれか一項において、
前記ゲート電極層のチャネル方向の幅が前記絶縁性酸化物を含む酸化物半導体層及び前記酸化物層のチャネル方向の幅より広いことを特徴とする半導体装置。 - 請求項1乃至請求項10のいずれか一項において、
前記絶縁性酸化物を含む酸化物半導体層の端部の下に空洞が形成されていることを特徴とする半導体装置。 - 請求項1乃至請求項11のいずれか一項において、
前記酸化物層の端部が前記絶縁性酸化物を含む酸化物半導体層によって覆われていることを特徴とする半導体装置。 - 請求項1乃至請求項12のいずれか一項において、
前記絶縁性酸化物を含む酸化物半導体層は、複数の積層であり、
上層の前記絶縁性酸化物を含む酸化物半導体層は、下層の前記絶縁性酸化物を含む酸化物半導体層より多量の絶縁性酸化物を含むターゲットを用いたスパッタ法によって形成されることを特徴とする半導体装置。 - 請求項1乃至請求項13のいずれか一項において、
前記酸化物層及び前記絶縁性酸化物を含む酸化物半導体層は、レアメタルを含まないことを特徴とする半導体装置。 - 請求項1乃至請求項14のいずれか一項において、
前記半導体層は、Zn−O系の酸化物、又はSn−Zn−O系の酸化物のみからなることを特徴とする半導体装置。 - 請求項1乃至請求項15のいずれか一項において、
前記絶縁性酸化物を含む酸化物半導体層は、Zn−O系の酸化物、又はSn−Zn−O系の酸化物のみからなることを特徴とする半導体装置。 - 基板上にゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層上に、Znを含ませたターゲットを用いたスパッタ法によって酸化物膜を成膜し、
前記酸化物膜上に、SiO2とZnとを含ませたターゲットを用いたスパッタ法によって酸化シリコンを含む絶縁性酸化物を含む酸化物半導体膜を成膜し、
前記酸化物膜及び前記絶縁性酸化物を含む酸化物半導体膜をエッチングして酸化物層と絶縁性酸化物を含む酸化物半導体層を形成し、
前記絶縁性酸化物を含む酸化物半導体層の上に導電層を成膜し、
前記絶縁性酸化物を含む酸化物半導体層と前記導電層をエッチングしてソース電極層及びドレイン電極層を形成し、
前記SiO2とZnとを含ませたターゲットは、SiO2を2.5重量パーセント以上20重量パーセント以下含み、
前記酸化物層及び前記絶縁性酸化物を含む酸化物半導体層は、インジウムを含まないことを特徴とする半導体装置の作製方法。 - 請求項17において、
前記酸化物膜及び前記絶縁性酸化物を含む酸化物半導体膜をウェットエッチングすることで、
前記酸化物膜をサイドエッチングし、
前記絶縁性酸化物を含む酸化物半導体層の端部の下に空洞を形成することを特徴とする半導体装置の作製方法。 - 基板上にゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層上に、Znを含ませたターゲットを用いたスパッタ法によって酸化物膜を成膜し、
前記酸化物膜をエッチングして酸化物層を形成し、
前記酸化物層上に、SiO2とZnとを含ませたターゲットを用いたスパッタ法によって酸化シリコンを含む絶縁性酸化物を含む酸化物半導体膜を成膜し、
前記絶縁性酸化物を含む酸化物半導体膜をエッチングして、前記酸化物層を覆うように絶縁性酸化物を含む酸化物半導体層を形成し、
前記絶縁性酸化物を含む酸化物半導体層の上に導電層を成膜し、
前記絶縁性酸化物を含む酸化物半導体層と前記導電層をエッチングしてソース電極層及びドレイン電極層を形成し、
前記SiO2とZnとを含ませたターゲットは、SiO2を2.5重量パーセント以上20重量パーセント以下含み、
前記酸化物層及び前記絶縁性酸化物を含む酸化物半導体層は、インジウムを含まないことを特徴とする半導体装置の作製方法。 - 請求項17乃至請求項19のいずれか一項において、
前記SiO2とZnとを含ませたターゲットは、SiO2を7.5重量パーセント以上12.5重量パーセント以下含むことを特徴とする半導体装置の作製方法。 - 請求項17乃至請求項20のいずれか一項において、
前記酸化物層における前記ソース電極層と前記ドレイン電極層の間の領域に、前記ソース電極層及び前記ドレイン電極層と重なる領域よりも膜厚の薄い領域を設けることを特徴とする半導体装置の作製方法。 - 請求項17乃至請求項21のいずれか一項において、
前記酸化物層及び前記絶縁性酸化物を含む酸化物半導体層は、レアメタルを含まないことを特徴とする半導体装置の作製方法。 - 請求項17乃至請求項22のいずれか一項において、
前記半導体層は、Zn−O系の酸化物、又はSn−Zn−O系の酸化物のみからなることを特徴とする半導体装置の作製方法。 - 請求項17乃至請求項23のいずれか一項において、
前記絶縁性酸化物を含む酸化物半導体層は、Zn−O系の酸化物半導体、又はSn−Zn−O系の酸化物半導体のみからなることを特徴とする半導体装置の作製方法。
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CN101866952B (zh) | 2015-04-29 |
US8853690B2 (en) | 2014-10-07 |
KR20170044076A (ko) | 2017-04-24 |
TW201515233A (zh) | 2015-04-16 |
US20130126863A1 (en) | 2013-05-23 |
JP2015043443A (ja) | 2015-03-05 |
JP5624351B2 (ja) | 2014-11-12 |
CN101866952A (zh) | 2010-10-20 |
US9190528B2 (en) | 2015-11-17 |
US8362478B2 (en) | 2013-01-29 |
TWI476917B (zh) | 2015-03-11 |
KR20100114842A (ko) | 2010-10-26 |
TWI535023B (zh) | 2016-05-21 |
TW201108417A (en) | 2011-03-01 |
US20150004746A1 (en) | 2015-01-01 |
JP5952365B2 (ja) | 2016-07-13 |
US20100264412A1 (en) | 2010-10-21 |
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