JP2007519232A5 - - Google Patents

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Publication number
JP2007519232A5
JP2007519232A5 JP2006544191A JP2006544191A JP2007519232A5 JP 2007519232 A5 JP2007519232 A5 JP 2007519232A5 JP 2006544191 A JP2006544191 A JP 2006544191A JP 2006544191 A JP2006544191 A JP 2006544191A JP 2007519232 A5 JP2007519232 A5 JP 2007519232A5
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JP
Japan
Prior art keywords
workpiece
distance
damping
damping member
wafer
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JP2006544191A
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English (en)
Japanese (ja)
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JP5630935B2 (ja
JP2007519232A (ja
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Priority claimed from US10/742,575 external-priority patent/US9627244B2/en
Application filed filed Critical
Priority claimed from PCT/CA2004/002155 external-priority patent/WO2005059991A1/en
Publication of JP2007519232A publication Critical patent/JP2007519232A/ja
Publication of JP2007519232A5 publication Critical patent/JP2007519232A5/ja
Application granted granted Critical
Publication of JP5630935B2 publication Critical patent/JP5630935B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2006544191A 2003-12-19 2004-12-17 工作物の熱誘起運動を抑制する機器及び装置 Expired - Lifetime JP5630935B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/742,575 US9627244B2 (en) 2002-12-20 2003-12-19 Methods and systems for supporting a workpiece and for heat-treating the workpiece
US10/742,575 2003-12-19
US56868504P 2004-05-07 2004-05-07
US60/568,685 2004-05-07
PCT/CA2004/002155 WO2005059991A1 (en) 2003-12-19 2004-12-17 Apparatuses and methods for suppressing thermally induced motion of a workpiece

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012158761A Division JP5926142B2 (ja) 2003-12-19 2012-07-17 工作物の熱誘起運動を抑制する機器及び装置

Publications (3)

Publication Number Publication Date
JP2007519232A JP2007519232A (ja) 2007-07-12
JP2007519232A5 true JP2007519232A5 (enExample) 2008-02-14
JP5630935B2 JP5630935B2 (ja) 2014-11-26

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JP2006544191A Expired - Lifetime JP5630935B2 (ja) 2003-12-19 2004-12-17 工作物の熱誘起運動を抑制する機器及び装置

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Country Link
US (1) US7501607B2 (enExample)
JP (1) JP5630935B2 (enExample)
WO (1) WO2005059991A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101324470B (zh) 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
US7781947B2 (en) * 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
US20050284371A1 (en) * 2004-06-29 2005-12-29 Mcfadden Robert S Deposition apparatus for providing uniform low-k dielectric
JP4862280B2 (ja) * 2005-05-18 2012-01-25 ウシオ電機株式会社 半導体ウエハ急速加熱装置
JP2008546203A (ja) * 2005-06-01 2008-12-18 マットソン テクノロジー インコーポレイテッド パルス化された加熱処理の間に熱収支を最適化する方法
US7479203B2 (en) * 2005-08-22 2009-01-20 Lexmark International, Inc. Lamination of dry film to micro-fluid ejection head substrates
WO2007030941A1 (en) * 2005-09-14 2007-03-22 Mattson Technology Canada, Inc. Repeatable heat-treating methods and apparatus
US7184657B1 (en) 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
WO2008058397A1 (en) * 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
JP5186764B2 (ja) * 2006-12-13 2013-04-24 ウシオ電機株式会社 閃光放射装置
JP2010525581A (ja) 2007-05-01 2010-07-22 マトソン テクノロジー カナダ インコーポレイテッド 照射パルス熱処理方法および装置
JP5465373B2 (ja) * 2007-09-12 2014-04-09 大日本スクリーン製造株式会社 熱処理装置
US9498845B2 (en) 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
KR100974997B1 (ko) * 2008-02-22 2010-08-09 박성환 누수 인출이 가능한 데크플레이트
JP5291965B2 (ja) * 2008-03-25 2013-09-18 大日本スクリーン製造株式会社 熱処理装置
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
JP2010141103A (ja) * 2008-12-11 2010-06-24 Toshiba Corp 半導体装置の製造方法および熱処理装置
JP5530856B2 (ja) * 2010-08-18 2014-06-25 信越半導体株式会社 ウエーハの熱処理方法及びシリコンウエーハの製造方法並びに熱処理装置
US9279727B2 (en) * 2010-10-15 2016-03-08 Mattson Technology, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
US20120171377A1 (en) * 2010-12-30 2012-07-05 Veeco Instruments Inc. Wafer carrier with selective control of emissivity
JP2011199295A (ja) * 2011-04-27 2011-10-06 Ushio Inc 半導体ウエハ急速加熱装置
JP5855353B2 (ja) * 2011-05-13 2016-02-09 株式会社Screenホールディングス 熱処理装置および熱処理方法
CN103843129B (zh) * 2011-09-30 2017-03-01 应用材料公司 具有温度控制的静电夹具
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Screenホールディングス 熱処理装置
KR20140091203A (ko) * 2013-01-10 2014-07-21 삼성전자주식회사 반도체의 잔류 응력 제거장치 및 잔류 응력 제거방법
FR3002768B1 (fr) * 2013-03-01 2015-02-20 Saint Gobain Procede de traitement thermique d'un revetement
WO2017116709A1 (en) * 2015-12-30 2017-07-06 Mattson Technology, Inc. Substrate support in a millisecond anneal system
JP6924196B2 (ja) * 2016-01-19 2021-08-25 インテヴァック インコーポレイテッド 基板製造用のパターンチャック
WO2018213825A1 (en) 2017-05-19 2018-11-22 Massachusetts Institute Of Technology Transport system having a magnetically levitated transportation stage
WO2019036269A1 (en) 2017-08-16 2019-02-21 Mattson Technology, Inc. THERMAL TREATMENT OF CLOSED SHAPE WORKPIECES
JP7336369B2 (ja) * 2019-11-25 2023-08-31 株式会社Screenホールディングス 基板支持装置、熱処理装置、基板支持方法、熱処理方法
WO2022104028A1 (en) * 2020-11-13 2022-05-19 Massachusetts Institute Of Technology Reticle exchange device with reticle levitation
CN114608475A (zh) * 2022-02-28 2022-06-10 南京中安半导体设备有限责任公司 卡盘、相移式干涉仪及晶圆形貌干涉测量方法
US12383066B2 (en) 2022-04-26 2025-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Chair with shape memory material-based movement synchronized with visual content
CN115020303B (zh) * 2022-08-09 2022-11-04 北京屹唐半导体科技股份有限公司 晶圆的热处理装置
US12270386B2 (en) 2023-02-16 2025-04-08 Toyota Motor Engineering & Manufacturing North America, Inc. Shape memory material member-based actuator
US12241458B2 (en) 2023-02-16 2025-03-04 Toyota Motor Engineering & Manufacturing North America, Inc. Actuator with contracting member
US12152570B2 (en) 2023-02-22 2024-11-26 Toyota Motor Engineering & Manufacturing North America, Inc. Shape memory material member-based actuator with electrostatic clutch preliminary class
US12163507B2 (en) 2023-02-22 2024-12-10 Toyota Motor Engineering & Manufacturing North America, Inc. Contracting member-based actuator with clutch
US12234811B1 (en) 2023-08-21 2025-02-25 Toyota Motor Engineering & Manufacturing North America, Inc. Monitoring a state of a shape memory material member

Family Cites Families (264)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US420232A (en) * 1890-01-28 Gustav heymeier
USRE24296E (en) * 1957-03-26 Apparatus for infra-red cooking
US2981819A (en) * 1961-04-25 Heater construction for kiln or other apparatus
US1587023A (en) 1922-02-17 1926-06-01 Mecky Company A Multiple-reflector single-unit combined toaster and cooker
US1998428A (en) * 1933-02-06 1935-04-16 Huettner Alfred Francis Safety microtome knife holder
NL246576A (enExample) 1954-05-18 1900-01-01
NL256300A (enExample) 1959-05-28 1900-01-01
US3108173A (en) 1960-07-22 1963-10-22 Lakeshire Products Inc Infra-red heating apparatus
US3160517A (en) 1961-11-13 1964-12-08 Union Carbide Corp Method of depositing metals and metallic compounds throughout the pores of a porous body
US3213827A (en) 1962-03-13 1965-10-26 Union Carbide Corp Apparatus for gas plating bulk material to metallize the same
US3240915A (en) * 1962-09-19 1966-03-15 Fostoria Corp Infra-red heater
US3227065A (en) * 1963-06-07 1966-01-04 Alan L Litman Waterless egg cooker
US3239651A (en) * 1963-08-21 1966-03-08 Ekco Products Company Heating unit
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
US3460510A (en) 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3627590A (en) 1968-12-02 1971-12-14 Western Electric Co Method for heat treatment of workpieces
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
US3610613A (en) 1969-03-17 1971-10-05 Worden Quartz Products Inc Quartz holder for supporting wafers
US3692572A (en) 1969-08-12 1972-09-19 Wolfgang Strehlow Epitaxial film process and products thereof
US3623712A (en) 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
US3700850A (en) 1970-09-04 1972-10-24 Western Electric Co Method for detecting the amount of material removed by a laser
AT312351B (de) 1972-05-26 1973-12-27 Semperit Ag Vorrichtung zur hydroponischen Kultivation von Pflanzen
US3913872A (en) 1973-01-18 1975-10-21 Bell & Howell Co Light tunnel for uniformly illuminating an object
US3836751A (en) 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
GB1485908A (en) 1974-05-21 1977-09-14 Nath G Apparatus for applying light radiation
US4027185A (en) * 1974-06-13 1977-05-31 Canadian Patents And Development Limited High intensity radiation source
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
US4041278A (en) 1975-05-19 1977-08-09 General Electric Company Heating apparatus for temperature gradient zone melting
US4115163A (en) 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
CA1095387A (en) 1976-02-17 1981-02-10 Conrad M. Banas Skin melting
US4224096A (en) 1976-03-25 1980-09-23 W. R. Grace & Co. Laser sealing of thermoplastic material
US4101759A (en) 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
US4097226A (en) 1976-10-26 1978-06-27 General Electric Company Furnace for practising temperature gradient zone melting
JPS54103174A (en) 1978-01-31 1979-08-14 Tokyo Shibaura Electric Co Cooking instrument
JPS583478B2 (ja) * 1978-03-03 1983-01-21 株式会社日立製作所 レ−ザ加熱方法および装置
US4164643A (en) 1978-03-06 1979-08-14 Dewitt David P Energy-efficient bi-radiant oven system
FR2435818A1 (fr) 1978-09-08 1980-04-04 Ibm France Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs
JPS55115327U (enExample) 1979-02-09 1980-08-14
US4370175A (en) * 1979-12-03 1983-01-25 Bernard B. Katz Method of annealing implanted semiconductors by lasers
JPS56100412A (en) 1979-12-17 1981-08-12 Sony Corp Manufacture of semiconductor device
US4306731A (en) 1979-12-21 1981-12-22 Varian Associates, Inc. Wafer support assembly
JPS56100426A (en) 1980-01-14 1981-08-12 Ushio Inc Device and method for annealing
US4356384A (en) 1980-03-03 1982-10-26 Arnon Gat Method and means for heat treating semiconductor material using high intensity CW lamps
US4331485A (en) * 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps
JPS56142630A (en) * 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
US4308078A (en) 1980-06-06 1981-12-29 Cook Melvin S Method of producing single-crystal semiconductor films by laser treatment
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
JPS6014997Y2 (ja) 1980-11-05 1985-05-13 三菱重工業株式会社 クラツチリングギヤ
JPS57208146A (en) 1981-06-17 1982-12-21 Nec Corp Forming method for insulating film to compound semiconductor
US4379727A (en) * 1981-07-08 1983-04-12 International Business Machines Corporation Method of laser annealing of subsurface ion implanted regions
US4431459A (en) * 1981-07-17 1984-02-14 National Semiconductor Corporation Fabrication of MOSFETs by laser annealing through anti-reflective coating
US4421048A (en) 1981-10-22 1983-12-20 The United States Of America As Represented By The Secretary Of The Navy Situ incineration/detoxification system for antifouling coatings
JPS5870536U (ja) 1981-11-06 1983-05-13 カヤバ工業株式会社 軸方向摺動変位保持式源衰力調整シヨツクアブソ−バ
JPS58106836U (ja) 1982-01-14 1983-07-20 株式会社明電舎 真空開閉器
JPS59928A (ja) 1982-06-25 1984-01-06 Ushio Inc 光加熱装置
FR2532783A1 (fr) * 1982-09-07 1984-03-09 Vu Duy Phach Machine de traitement thermique pour semiconducteurs
JPS5959876A (ja) * 1982-09-30 1984-04-05 Ushio Inc 光照射炉の運転方法
JPS5977289A (ja) 1982-10-26 1984-05-02 ウシオ電機株式会社 光照射炉
JPS59121821A (ja) * 1982-12-28 1984-07-14 Ushio Inc 加熱器組立体
GB2136937A (en) 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
JPS59193024A (ja) * 1983-03-29 1984-11-01 Ushio Inc 閃光照射装置
JPS59211221A (ja) 1983-05-17 1984-11-30 Nippon Denso Co Ltd イオン注入した半導体の熱処理方法
US4539431A (en) 1983-06-06 1985-09-03 Sera Solar Corporation Pulse anneal method for solar cell
US5231595A (en) 1983-06-06 1993-07-27 Minolta Camera Kabushiki Kaisha Pyrometer
US4550684A (en) 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating
KR910004158B1 (en) 1983-08-15 1991-06-22 Sinagawa Sirotenga Co Ltd Thermal deformation measuring system of ceranics and the like
US5350899A (en) 1992-04-15 1994-09-27 Hiroichi Ishikawa Semiconductor wafer temperature determination by optical measurement of wafer expansion in processing apparatus chamber
US4698486A (en) 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4560420A (en) 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
US4649241A (en) 1984-11-09 1987-03-10 Siemens-Allis, Inc. Solenoid actuated high speed, high current making switch with a movable contact ring
JPS61129834A (ja) * 1984-11-28 1986-06-17 Dainippon Screen Mfg Co Ltd 光照射型熱処理装置
CA1239437A (en) 1984-12-24 1988-07-19 Vortek Industries Ltd. High intensity radiation method and apparatus having improved liquid vortex flow
US4682594A (en) 1985-03-11 1987-07-28 Mcm Laboratories, Inc. Probe-and-fire lasers
HU198339B (en) 1985-05-10 1989-09-28 Budapesti Mueszaki Egyetem Method and measuring probe for simultaneous local detection of thermophysical characteristics, first of all, of thermal conductivity and coefficient of temperature distribution
JPS6237927U (enExample) * 1985-08-27 1987-03-06
US4661177A (en) * 1985-10-08 1987-04-28 Varian Associates, Inc. Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources
FR2594529B1 (fr) 1986-02-19 1990-01-26 Bertin & Cie Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium
US4751193A (en) 1986-10-09 1988-06-14 Q-Dot, Inc. Method of making SOI recrystallized layers by short spatially uniform light pulses
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
US4794619A (en) 1986-12-05 1988-12-27 Conax Buffalo Corporation Optical fiber temperature sensor
US4755654A (en) 1987-03-26 1988-07-05 Crowley John L Semiconductor wafer heating chamber
US4787551A (en) 1987-05-04 1988-11-29 Stanford University Method of welding thermocouples to silicon wafers for temperature monitoring in rapid thermal processing
US4818327A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Wafer processing apparatus
US4826269A (en) * 1987-10-16 1989-05-02 Spectra Diode Laboratories, Inc. Diode laser arrangement forming bright image
DE3739862A1 (de) 1987-11-25 1989-06-08 Bosch Gmbh Robert Werkstueckbearbeitungsvorrichtung
US4851358A (en) 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US4857689A (en) 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing
JP2605090B2 (ja) 1988-03-28 1997-04-30 東京エレクトロン株式会社 ビームアニール装置
JPH01268120A (ja) 1988-04-20 1989-10-25 Fujitsu Ltd 半導体装置用ウェハの温度測定方法
US5188458A (en) * 1988-04-27 1993-02-23 A G Processing Technologies, Inc. Pyrometer apparatus and method
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
KR0155545B1 (ko) 1988-06-27 1998-12-01 고다까 토시오 기판의 열처리 장치
KR960013995B1 (ko) 1988-07-15 1996-10-11 도오교오 에레구토론 가부시끼가이샤 반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치
US4891499A (en) * 1988-09-09 1990-01-02 Texas Instruments Incorporated Method and apparatus for real-time wafer temperature uniformity control and slip-free heating in lamp heated single-wafer rapid thermal processing systems
US4956538A (en) 1988-09-09 1990-09-11 Texas Instruments, Incorporated Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
US4937490A (en) 1988-12-19 1990-06-26 Vortek Industries Ltd. High intensity radiation apparatus and fluid recirculating system therefor
DE3926859A1 (de) 1988-12-30 1990-07-05 Fraunhofer Ges Forschung Verfahren und vorrichtung zum bearbeiten von werkstuecken mit laserstrahlung
EP0598409B1 (en) 1989-02-14 1998-11-18 Seiko Epson Corporation A method of manufacturing a semiconductor device
US4959244A (en) 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
US4984902A (en) * 1989-04-13 1991-01-15 Peak Systems, Inc. Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing
US5011794A (en) 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
JP3190653B2 (ja) 1989-05-09 2001-07-23 ソニー株式会社 アニール方法およびアニール装置
US5002630A (en) * 1989-06-06 1991-03-26 Rapro Technology Method for high temperature thermal processing with reduced convective heat loss
JP2923008B2 (ja) * 1989-12-11 1999-07-26 株式会社日立製作所 成膜方法及び成膜装置
US5155337A (en) 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
US5282017A (en) * 1990-01-05 1994-01-25 Quantum Logic Corporation Reflectance probe
US5092210A (en) * 1990-01-10 1992-03-03 Klaus Dern Holder for disposable blade for microtomes and the like
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
EP0695922B1 (en) 1990-01-19 2001-11-21 Applied Materials, Inc. Heating apparatus for semiconductor wafers or substrates
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
US5073698A (en) 1990-03-23 1991-12-17 Peak Systems, Inc. Method for selectively heating a film on a substrate
US5310260A (en) * 1990-04-10 1994-05-10 Luxtron Corporation Non-contact optical techniques for measuring surface conditions
US5271084A (en) 1990-05-23 1993-12-14 Interuniversitair Micro Elektronica Centrum Vzw Method and device for measuring temperature radiation using a pyrometer wherein compensation lamps are used
US5319528A (en) 1990-08-01 1994-06-07 Diomed Limited High power light source
US5258824A (en) 1990-08-09 1993-11-02 Applied Materials, Inc. In-situ measurement of a thin film deposited on a wafer
JPH04152518A (ja) * 1990-10-16 1992-05-26 Toshiba Corp 半導体装置の製造方法
US5317429A (en) * 1990-11-28 1994-05-31 Fujitsu Limited Trilayer nematic liquid crystal optical switching device
US5293216A (en) * 1990-12-31 1994-03-08 Texas Instruments Incorporated Sensor for semiconductor device manufacturing process control
JPH04243123A (ja) * 1991-01-17 1992-08-31 Mitsubishi Electric Corp 半導体製造装置
JP2748702B2 (ja) * 1991-02-04 1998-05-13 松下電器産業株式会社 三次元測定機の誤差補正方法
JPH06318558A (ja) 1991-02-26 1994-11-15 Hitachi Vlsi Eng Corp ランプアニール装置
DE4109956A1 (de) * 1991-03-26 1992-10-01 Siemens Ag Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung
JPH04355911A (ja) 1991-03-27 1992-12-09 Fujitsu Ltd 半導体装置の製造装置
US5446825A (en) 1991-04-24 1995-08-29 Texas Instruments Incorporated High performance multi-zone illuminator module for semiconductor wafer processing
US5508934A (en) * 1991-05-17 1996-04-16 Texas Instruments Incorporated Multi-point semiconductor wafer fabrication process temperature control system
US5317656A (en) * 1991-05-17 1994-05-31 Texas Instruments Incorporated Fiber optic network for multi-point emissivity-compensated semiconductor wafer pyrometry
US5255286A (en) 1991-05-17 1993-10-19 Texas Instruments Incorporated Multi-point pyrometry with real-time surface emissivity compensation
US5436172A (en) 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5163312A (en) * 1991-05-31 1992-11-17 Texas Instruments Incorporated Wafer proximity sensor
JP3466633B2 (ja) 1991-06-12 2003-11-17 ソニー株式会社 多結晶半導体層のアニール方法
US5359693A (en) 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
DE4223133A1 (de) 1991-07-15 1993-01-21 T Elektronik Gmbh As Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente
FR2682253A1 (fr) 1991-10-07 1993-04-09 Commissariat Energie Atomique Sole chauffante destinee a assurer le chauffage d'un objet dispose a sa surface et reacteur de traitement chimique muni de ladite sole.
US5446824A (en) 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US5336641A (en) 1992-03-17 1994-08-09 Aktis Corporation Rapid thermal annealing using thermally conductive overcoat
US5268989A (en) 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
US5364186A (en) 1992-04-28 1994-11-15 Luxtron Corporation Apparatus and method for monitoring a temperature using a thermally fused composite ceramic blackbody temperature probe
US5313044A (en) * 1992-04-28 1994-05-17 Duke University Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
GB9214380D0 (en) 1992-07-07 1992-08-19 Sev Furnaces Ltd Radiation transmitting apparatus
JP3202362B2 (ja) 1992-07-21 2001-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3211394B2 (ja) * 1992-08-13 2001-09-25 ソニー株式会社 半導体装置の製造方法
US5418885A (en) * 1992-12-29 1995-05-23 North Carolina State University Three-zone rapid thermal processing system utilizing wafer edge heating means
DE69312894T2 (de) 1992-12-29 1998-02-12 Philips Electronics Nv Pyrometer mit Emissionsmesser
US5325180A (en) 1992-12-31 1994-06-28 International Business Machines Corporation Apparatus for identifying and distinguishing temperature and system induced measuring errors
US5326173A (en) 1993-01-11 1994-07-05 Alcan International Limited Apparatus and method for remote temperature measurement
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5580388A (en) 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5308161A (en) * 1993-02-11 1994-05-03 Quantum Logic Corporation Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers
JP2824003B2 (ja) 1993-02-16 1998-11-11 大日本スクリーン製造株式会社 基板の温度測定装置
US5350236A (en) * 1993-03-08 1994-09-27 Micron Semiconductor, Inc. Method for repeatable temperature measurement using surface reflectivity
US5305417A (en) * 1993-03-26 1994-04-19 Texas Instruments Incorporated Apparatus and method for determining wafer temperature using pyrometry
US5305416A (en) 1993-04-02 1994-04-19 At&T Bell Laboratories Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies
JPH06295915A (ja) * 1993-04-09 1994-10-21 F T L:Kk 半導体装置の製造装置及び半導体装置の製造方法
US5347128A (en) 1993-04-19 1994-09-13 Vigyan, Inc. Directional emittance surface measurement system and process
FR2705917B1 (fr) * 1993-06-02 1995-09-08 Tabone Herve Microtome à aspiration, notamment pour travaux histologiques et similaires.
US5501637A (en) * 1993-08-10 1996-03-26 Texas Instruments Incorporated Temperature sensor and method
JPH0778830A (ja) * 1993-09-07 1995-03-20 Hitachi Ltd 半導体製造装置
TW266230B (enExample) * 1993-09-09 1995-12-21 Tokyo Electron Co Ltd
US5427733A (en) 1993-10-20 1995-06-27 United Technologies Corporation Method for performing temperature-controlled laser sintering
US5650082A (en) 1993-10-29 1997-07-22 Applied Materials, Inc. Profiled substrate heating
US5467220A (en) 1994-02-18 1995-11-14 Applied Materials, Inc. Method and apparatus for improving semiconductor wafer surface temperature uniformity
EP0669640A1 (en) * 1994-02-25 1995-08-30 Applied Materials, Inc. Susceptor for deposition apparatus
JPH07245274A (ja) 1994-03-02 1995-09-19 Tokyo Electron Ltd 熱処理装置
US5431700A (en) 1994-03-30 1995-07-11 Fsi International, Inc. Vertical multi-process bake/chill apparatus
DE4414391C2 (de) * 1994-04-26 2001-02-01 Steag Rtp Systems Gmbh Verfahren für wellenvektorselektive Pyrometrie in Schnellheizsystemen
US5654904A (en) 1994-05-18 1997-08-05 Micron Technology, Inc. Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine
US5561612A (en) 1994-05-18 1996-10-01 Micron Technology, Inc. Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine
EP1335419A3 (en) * 1994-06-15 2003-08-27 Seiko Epson Corporation Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
US5436443A (en) 1994-07-06 1995-07-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Polaradiometric pyrometer in which the parallel and perpendicular components of radiation reflected from an unpolarized light source are equalized with the thermal radiation emitted from a measured object to determine its true temperature
JPH0855810A (ja) * 1994-08-16 1996-02-27 Nec Kyushu Ltd 拡散炉
US5561735A (en) 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
US5604592A (en) * 1994-09-19 1997-02-18 Textron Defense Systems, Division Of Avco Corporation Laser ultrasonics-based material analysis system and method using matched filter processing
JP3440579B2 (ja) 1994-10-05 2003-08-25 ソニー株式会社 加熱処理方法
EP0871843B1 (en) 1994-10-17 2003-05-14 Varian Semiconductor Equipment Associates Inc. Mounting member and method for clamping a flat thin conductive workpiece
US5601366A (en) * 1994-10-25 1997-02-11 Texas Instruments Incorporated Method for temperature measurement in rapid thermal process systems
US5738440A (en) 1994-12-23 1998-04-14 International Business Machines Corp. Combined emissivity and radiance measurement for the determination of the temperature of a radiant object
US5517359A (en) * 1995-01-23 1996-05-14 Gelbart; Daniel Apparatus for imaging light from a laser diode onto a multi-channel linear light valve
EP0727928B1 (en) * 1995-02-18 1996-09-18 Hewlett-Packard GmbH Electronic assembly having improved thermal characteristics
JP3568271B2 (ja) 1995-03-27 2004-09-22 株式会社超高温材料研究所 レーザフラッシュ法を用いた熱定数の測定方法及びその装置
DE19513749B4 (de) * 1995-04-11 2004-07-01 Infineon Technologies Ag Verfahren und Vorrichtung zur Bestimmung des Emissionsfaktors von Halbleitermaterialien durch Bestrahlung mit elektromagnetischen Wellen
US5715361A (en) * 1995-04-13 1998-02-03 Cvc Products, Inc. Rapid thermal processing high-performance multizone illuminator for wafer backside heating
US5830277A (en) 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
US5597237A (en) * 1995-05-30 1997-01-28 Quantum Logic Corp Apparatus for measuring the emissivity of a semiconductor wafer
JP4026182B2 (ja) 1995-06-26 2007-12-26 セイコーエプソン株式会社 半導体装置の製造方法、および電子機器の製造方法
US5971565A (en) 1995-10-20 1999-10-26 Regents Of The University Of California Lamp system with conditioned water coolant and diffuse reflector of polytetrafluorethylene(PTFE)
US6051483A (en) * 1996-11-12 2000-04-18 International Business Machines Corporation Formation of ultra-shallow semiconductor junction using microwave annealing
US5809211A (en) 1995-12-11 1998-09-15 Applied Materials, Inc. Ramping susceptor-wafer temperature using a single temperature input
US6183565B1 (en) 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
US6108490A (en) 1996-07-11 2000-08-22 Cvc, Inc. Multizone illuminator for rapid thermal processing with improved spatial resolution
US5756369A (en) * 1996-07-11 1998-05-26 Lsi Logic Corporation Rapid thermal processing using a narrowband infrared source and feedback
US5937142A (en) 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US6536131B2 (en) * 1996-07-15 2003-03-25 Semitool, Inc. Wafer handling system
US5802099A (en) 1996-08-26 1998-09-01 Moore Epitaxial, Inc. Method for measuring substrate temperature in radiant heated reactors
JP3198259B2 (ja) 1996-10-02 2001-08-13 東芝キヤリア株式会社 冷媒加熱式冷暖房機の室外ユニット
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
US5963840A (en) * 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US5908307A (en) 1997-01-31 1999-06-01 Ultratech Stepper, Inc. Fabrication method for reduced-dimension FET devices
US5944422A (en) 1997-07-11 1999-08-31 A. G. Associates (Israel) Ltd. Apparatus for measuring the processing temperature of workpieces particularly semiconductor wafers
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5998768A (en) 1997-08-07 1999-12-07 Massachusetts Institute Of Technology Active thermal control of surfaces by steering heating beam in response to sensed thermal radiation
US5814365A (en) 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US5841110A (en) 1997-08-27 1998-11-24 Steag-Ast Gmbh Method and apparatus for improved temperature control in rapid thermal processing (RTP) systems
JPH1197371A (ja) 1997-09-18 1999-04-09 Tokyo Electron Ltd 熱処理装置
US6222990B1 (en) * 1997-12-03 2001-04-24 Steag Rtp Systems Heating element for heating the edges of wafers in thermal processing chambers
KR20010006155A (ko) 1998-02-13 2001-01-26 야스카와 히데아키 반도체장치의 제조방법 및 열처리장치
US6056434A (en) 1998-03-12 2000-05-02 Steag Rtp Systems, Inc. Apparatus and method for determining the temperature of objects in thermal processing chambers
DE19821007A1 (de) 1998-05-11 1999-11-25 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
US6146504A (en) 1998-05-21 2000-11-14 Applied Materials, Inc. Substrate support and lift apparatus and method
US6113056A (en) * 1998-08-04 2000-09-05 Micrion Corporation Workpiece vibration damper
US6217034B1 (en) * 1998-09-24 2001-04-17 Kla-Tencor Corporation Edge handling wafer chuck
JP4056148B2 (ja) 1998-10-09 2008-03-05 東京エレクトロン株式会社 放射温度計を用いた温度測定方法
US6645356B1 (en) 1998-12-07 2003-11-11 Semitool, Inc. Methods and apparatus for processing the surface of a microelectronic workpiece
US6183127B1 (en) * 1999-03-29 2001-02-06 Eaton Corporation System and method for the real time determination of the in situ emissivity of a workpiece during processing
US6293696B1 (en) 1999-05-03 2001-09-25 Steag Rtp Systems, Inc. System and process for calibrating pyrometers in thermal processing chambers
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6303917B1 (en) 1999-05-14 2001-10-16 Ultratech Stepper, Inc. Radiant energy monitoring apparatuses including a calibration operation and related methods
US6349270B1 (en) * 1999-05-27 2002-02-19 Emcore Corporation Method and apparatus for measuring the temperature of objects on a fast moving holder
CA2310883A1 (en) 1999-06-07 2000-12-07 Norman L. Arrison Method and apparatus for fracturing brittle materials by thermal stressing
US6406545B2 (en) * 1999-07-27 2002-06-18 Kabushiki Kaisha Toshiba Semiconductor workpiece processing apparatus and method
US6196532B1 (en) * 1999-08-27 2001-03-06 Applied Materials, Inc. 3 point vacuum chuck with non-resilient support members
US6561796B1 (en) 1999-09-07 2003-05-13 Novellus Systems, Inc. Method of semiconductor wafer heating to prevent bowing
US6621199B1 (en) 2000-01-21 2003-09-16 Vortek Industries Ltd. High intensity electromagnetic radiation apparatus and method
DE10003639C2 (de) 2000-01-28 2003-06-18 Steag Rtp Systems Gmbh Vorrichtung zum thermischen Behandeln von Substraten
JP2001319887A (ja) * 2000-02-08 2001-11-16 Matsushita Electric Ind Co Ltd ランプアニール装置および表示素子用基板
US6494371B1 (en) 2000-03-09 2002-12-17 Coherent, Inc. Diode-laser light projector for illuminating a linear array of light modulators
US6531681B1 (en) * 2000-03-27 2003-03-11 Ultratech Stepper, Inc. Apparatus having line source of radiant energy for exposing a substrate
US6376806B2 (en) * 2000-05-09 2002-04-23 Woo Sik Yoo Flash anneal
JP2002134592A (ja) 2000-10-19 2002-05-10 Tokyo Ohka Kogyo Co Ltd 熱処理装置および熱処理方法
DE10197002B3 (de) * 2000-12-04 2017-11-23 Mattson Technology Inc. Verfahren und System zur Wärmebehandlung
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
US6634882B2 (en) 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
US6529686B2 (en) * 2001-06-06 2003-03-04 Fsi International, Inc. Heating member for combination heating and chilling apparatus, and methods
US6669783B2 (en) 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
JP3798674B2 (ja) 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
US7071714B2 (en) * 2001-11-02 2006-07-04 Formfactor, Inc. Method and system for compensating for thermally induced motion of probe cards
TWI242815B (en) 2001-12-13 2005-11-01 Ushio Electric Inc Method for thermal processing semiconductor wafer
CN101324470B (zh) * 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
US6998580B2 (en) * 2002-03-28 2006-02-14 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US7005601B2 (en) * 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
US7070660B2 (en) 2002-05-03 2006-07-04 Asm America, Inc. Wafer holder with stiffening rib
US6885815B2 (en) * 2002-07-17 2005-04-26 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus performing irradiating a substrate with light
JP4090313B2 (ja) 2002-09-11 2008-05-28 大日本スクリーン製造株式会社 基板保持装置および基板処理装置
JP4216055B2 (ja) 2002-11-28 2009-01-28 大日本スクリーン製造株式会社 熱処理装置
US7062161B2 (en) 2002-11-28 2006-06-13 Dainippon Screen Mfg. Co., Ltd. Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor
JP4272445B2 (ja) 2003-02-10 2009-06-03 大日本スクリーン製造株式会社 熱処理装置
JP4121929B2 (ja) 2003-10-08 2008-07-23 大日本スクリーン製造株式会社 熱処理方法および熱処理装置
JP4121840B2 (ja) 2002-12-05 2008-07-23 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP4988202B2 (ja) * 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
JP4675579B2 (ja) * 2003-06-30 2011-04-27 大日本スクリーン製造株式会社 光エネルギー吸収比率の測定方法、光エネルギー吸収比率の測定装置および熱処理装置
JP2005050904A (ja) * 2003-07-30 2005-02-24 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法、ならびに基板載置機構
JP4618705B2 (ja) * 2003-09-18 2011-01-26 大日本スクリーン製造株式会社 熱処理装置
WO2005029014A2 (en) 2003-09-24 2005-03-31 T Squared Thermal Technologies, Ltd. Pulse forming network and pulse generator
US6855916B1 (en) * 2003-12-10 2005-02-15 Axcelis Technologies, Inc. Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
US7781947B2 (en) 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
WO2005078762A2 (en) 2004-02-12 2005-08-25 Mattson Technology Canada, Inc. High-intensity electromagnetic radiation apparatus and methods
WO2007030941A1 (en) * 2005-09-14 2007-03-22 Mattson Technology Canada, Inc. Repeatable heat-treating methods and apparatus
US7184657B1 (en) * 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method

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