JP5630935B2 - 工作物の熱誘起運動を抑制する機器及び装置 - Google Patents
工作物の熱誘起運動を抑制する機器及び装置 Download PDFInfo
- Publication number
- JP5630935B2 JP5630935B2 JP2006544191A JP2006544191A JP5630935B2 JP 5630935 B2 JP5630935 B2 JP 5630935B2 JP 2006544191 A JP2006544191 A JP 2006544191A JP 2006544191 A JP2006544191 A JP 2006544191A JP 5630935 B2 JP5630935 B2 JP 5630935B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- damping member
- damping
- distance
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000013016 damping Methods 0.000 claims description 306
- 238000010438 heat treatment Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 31
- 238000001816 cooling Methods 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 4
- 230000000153 supplemental effect Effects 0.000 claims description 2
- 230000003534 oscillatory effect Effects 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 80
- 230000000694 effects Effects 0.000 description 21
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- 238000005286 illumination Methods 0.000 description 16
- 230000008878 coupling Effects 0.000 description 14
- 238000010168 coupling process Methods 0.000 description 14
- 238000005859 coupling reaction Methods 0.000 description 14
- 230000006378 damage Effects 0.000 description 14
- 238000000137 annealing Methods 0.000 description 10
- 230000035882 stress Effects 0.000 description 10
- 230000001808 coupling effect Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
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- 230000035899 viability Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- 230000002238 attenuated effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
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- 239000002826 coolant Substances 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
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- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
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- 238000005191 phase separation Methods 0.000 description 1
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- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/742,575 US9627244B2 (en) | 2002-12-20 | 2003-12-19 | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
| US10/742,575 | 2003-12-19 | ||
| US56868504P | 2004-05-07 | 2004-05-07 | |
| US60/568,685 | 2004-05-07 | ||
| PCT/CA2004/002155 WO2005059991A1 (en) | 2003-12-19 | 2004-12-17 | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012158761A Division JP5926142B2 (ja) | 2003-12-19 | 2012-07-17 | 工作物の熱誘起運動を抑制する機器及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007519232A JP2007519232A (ja) | 2007-07-12 |
| JP2007519232A5 JP2007519232A5 (enExample) | 2008-02-14 |
| JP5630935B2 true JP5630935B2 (ja) | 2014-11-26 |
Family
ID=34681707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006544191A Expired - Lifetime JP5630935B2 (ja) | 2003-12-19 | 2004-12-17 | 工作物の熱誘起運動を抑制する機器及び装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7501607B2 (enExample) |
| JP (1) | JP5630935B2 (enExample) |
| WO (1) | WO2005059991A1 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101324470B (zh) | 2001-12-26 | 2011-03-30 | 加拿大马特森技术有限公司 | 测量温度和热处理的方法及系统 |
| JP4988202B2 (ja) | 2002-12-20 | 2012-08-01 | マトソン テクノロジー カナダ インコーポレイテッド | 工作物の支持及び熱処理の方法とシステム |
| WO2005059991A1 (en) | 2003-12-19 | 2005-06-30 | Mattson Technology Canada Inc. | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
| US7781947B2 (en) * | 2004-02-12 | 2010-08-24 | Mattson Technology Canada, Inc. | Apparatus and methods for producing electromagnetic radiation |
| US20050284371A1 (en) * | 2004-06-29 | 2005-12-29 | Mcfadden Robert S | Deposition apparatus for providing uniform low-k dielectric |
| JP4862280B2 (ja) * | 2005-05-18 | 2012-01-25 | ウシオ電機株式会社 | 半導体ウエハ急速加熱装置 |
| JP2008546203A (ja) * | 2005-06-01 | 2008-12-18 | マットソン テクノロジー インコーポレイテッド | パルス化された加熱処理の間に熱収支を最適化する方法 |
| US7479203B2 (en) * | 2005-08-22 | 2009-01-20 | Lexmark International, Inc. | Lamination of dry film to micro-fluid ejection head substrates |
| WO2007030941A1 (en) * | 2005-09-14 | 2007-03-22 | Mattson Technology Canada, Inc. | Repeatable heat-treating methods and apparatus |
| US7184657B1 (en) | 2005-09-17 | 2007-02-27 | Mattson Technology, Inc. | Enhanced rapid thermal processing apparatus and method |
| WO2008058397A1 (en) * | 2006-11-15 | 2008-05-22 | Mattson Technology Canada, Inc. | Systems and methods for supporting a workpiece during heat-treating |
| JP5186764B2 (ja) * | 2006-12-13 | 2013-04-24 | ウシオ電機株式会社 | 閃光放射装置 |
| JP2010525581A (ja) | 2007-05-01 | 2010-07-22 | マトソン テクノロジー カナダ インコーポレイテッド | 照射パルス熱処理方法および装置 |
| JP5465373B2 (ja) * | 2007-09-12 | 2014-04-09 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| US9498845B2 (en) | 2007-11-08 | 2016-11-22 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
| US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
| KR100974997B1 (ko) * | 2008-02-22 | 2010-08-09 | 박성환 | 누수 인출이 가능한 데크플레이트 |
| JP5291965B2 (ja) * | 2008-03-25 | 2013-09-18 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| WO2009137940A1 (en) | 2008-05-16 | 2009-11-19 | Mattson Technology Canada, Inc. | Workpiece breakage prevention method and apparatus |
| JP2010141103A (ja) * | 2008-12-11 | 2010-06-24 | Toshiba Corp | 半導体装置の製造方法および熱処理装置 |
| JP5530856B2 (ja) * | 2010-08-18 | 2014-06-25 | 信越半導体株式会社 | ウエーハの熱処理方法及びシリコンウエーハの製造方法並びに熱処理装置 |
| US9279727B2 (en) * | 2010-10-15 | 2016-03-08 | Mattson Technology, Inc. | Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed |
| US20120171377A1 (en) * | 2010-12-30 | 2012-07-05 | Veeco Instruments Inc. | Wafer carrier with selective control of emissivity |
| JP2011199295A (ja) * | 2011-04-27 | 2011-10-06 | Ushio Inc | 半導体ウエハ急速加熱装置 |
| JP5855353B2 (ja) * | 2011-05-13 | 2016-02-09 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
| CN103843129B (zh) * | 2011-09-30 | 2017-03-01 | 应用材料公司 | 具有温度控制的静电夹具 |
| JP5964626B2 (ja) * | 2012-03-22 | 2016-08-03 | 株式会社Screenホールディングス | 熱処理装置 |
| KR20140091203A (ko) * | 2013-01-10 | 2014-07-21 | 삼성전자주식회사 | 반도체의 잔류 응력 제거장치 및 잔류 응력 제거방법 |
| FR3002768B1 (fr) * | 2013-03-01 | 2015-02-20 | Saint Gobain | Procede de traitement thermique d'un revetement |
| WO2017116709A1 (en) * | 2015-12-30 | 2017-07-06 | Mattson Technology, Inc. | Substrate support in a millisecond anneal system |
| JP6924196B2 (ja) * | 2016-01-19 | 2021-08-25 | インテヴァック インコーポレイテッド | 基板製造用のパターンチャック |
| WO2018213825A1 (en) | 2017-05-19 | 2018-11-22 | Massachusetts Institute Of Technology | Transport system having a magnetically levitated transportation stage |
| WO2019036269A1 (en) | 2017-08-16 | 2019-02-21 | Mattson Technology, Inc. | THERMAL TREATMENT OF CLOSED SHAPE WORKPIECES |
| JP7336369B2 (ja) * | 2019-11-25 | 2023-08-31 | 株式会社Screenホールディングス | 基板支持装置、熱処理装置、基板支持方法、熱処理方法 |
| WO2022104028A1 (en) * | 2020-11-13 | 2022-05-19 | Massachusetts Institute Of Technology | Reticle exchange device with reticle levitation |
| CN114608475A (zh) * | 2022-02-28 | 2022-06-10 | 南京中安半导体设备有限责任公司 | 卡盘、相移式干涉仪及晶圆形貌干涉测量方法 |
| US12383066B2 (en) | 2022-04-26 | 2025-08-12 | Toyota Motor Engineering & Manufacturing North America, Inc. | Chair with shape memory material-based movement synchronized with visual content |
| CN115020303B (zh) * | 2022-08-09 | 2022-11-04 | 北京屹唐半导体科技股份有限公司 | 晶圆的热处理装置 |
| US12270386B2 (en) | 2023-02-16 | 2025-04-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Shape memory material member-based actuator |
| US12241458B2 (en) | 2023-02-16 | 2025-03-04 | Toyota Motor Engineering & Manufacturing North America, Inc. | Actuator with contracting member |
| US12152570B2 (en) | 2023-02-22 | 2024-11-26 | Toyota Motor Engineering & Manufacturing North America, Inc. | Shape memory material member-based actuator with electrostatic clutch preliminary class |
| US12163507B2 (en) | 2023-02-22 | 2024-12-10 | Toyota Motor Engineering & Manufacturing North America, Inc. | Contracting member-based actuator with clutch |
| US12234811B1 (en) | 2023-08-21 | 2025-02-25 | Toyota Motor Engineering & Manufacturing North America, Inc. | Monitoring a state of a shape memory material member |
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2004
- 2004-12-17 WO PCT/CA2004/002155 patent/WO2005059991A1/en not_active Ceased
- 2004-12-17 JP JP2006544191A patent/JP5630935B2/ja not_active Expired - Lifetime
- 2004-12-20 US US11/018,388 patent/US7501607B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US7501607B2 (en) | 2009-03-10 |
| JP2007519232A (ja) | 2007-07-12 |
| WO2005059991A1 (en) | 2005-06-30 |
| US20050133167A1 (en) | 2005-06-23 |
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